CN104600566A - High beam quality of semiconductor laser array beam combination device - Google Patents
High beam quality of semiconductor laser array beam combination device Download PDFInfo
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- CN104600566A CN104600566A CN201410766652.6A CN201410766652A CN104600566A CN 104600566 A CN104600566 A CN 104600566A CN 201410766652 A CN201410766652 A CN 201410766652A CN 104600566 A CN104600566 A CN 104600566A
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- semiconductor laser
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- merging apparatus
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Abstract
The invention provides a high beam quality of semiconductor laser array beam combination device and belongs to the laser technical field. A semiconductor laser stack is placed in an outer chamber, wherein the semiconductor laser stack is formed by a semiconductor laser bar, a corresponding wavelength of high-transparence film coats the output surface of the semiconductor laser stack, the outer chamber is formed by the semiconductor laser bar, a deflection angle prism, a focusing mirror, a blazed grating and an outer chamber feedback output mirror, and the deflection angle prism is designed relative to the laser wavelength of the bar. The feedback effect on lasers generated by light-emitting points can be achieved due to lasers fed back from the outer chamber feedback output mirror and accordingly the corresponding selection on the wavelengths and modes of the lasers of the semiconductor light-emitting points is achieved so as to enable every light-emitting point laser of the semiconductor laser bar and a blazed laser of the blazed grating to be conjugated. Meanwhile, the same glazed angle of the different wavelengths of lasers on the glazed grating is achieved under the action of the deflection angle prism and accordingly the lasers of every light-emitting point on the bar form one light-emitting point laser through beam combination and the lasers are arranged into a column in the direction of the fast axis of the semiconductor lasers to be combined into a laser beam through a wave length beam combination device.
Description
Technical field:
The two dimension that the present invention relates to semiconductor laser storehouse closes bundle technology, belongs to laser technology field.
Background technology
Semiconductor laser, particularly high-power semiconductor laser, all form bar bar by semiconductor laser light emitting point, or be made up of that semiconductor laser storehouse produces again bar bar.Laser beam forms by the laser of each luminous point is superimposed, beam quality due to luminous point filling rate to affect beam quality poor, so be necessary to carry out shaping to its light beam, thus change its beam quality.The shaping of present stage to semiconductor laser storehouse main waveguide mirror refraction shaping, ladder lens reflection shaping etc., it is mainly split semiconductor laser, rearrangement, sacrifices the beam quality of semiconductor laser quick shaft direction, thus reduces the beam quality of slow-axis direction.Beam quality after shaping does not still reach requirement in a lot of industry and research.
Summary of the invention
A kind of high light beam quality semiconductor laser array beam merging apparatus that content of the present invention provides, external cavity feedback is adopted to close bundle, again through multi-wavelength beam merging apparatus, the laser beam size that semiconductor laser storehouse is exported and beam quality are close with the shoot laser of single-point on semiconductor laser bar after this device.
The present invention adopts technical scheme as follows:
The semiconductor laser storehouse that the semiconductor laser bar bar of the high transmittance film being coated with respective wavelength by output face forms is placed on and clings to bar by semiconductor laser, relative to the drift angle prism of bar bar optical maser wavelength design, focus lamp, shaping in the exocoel of balzed grating, and external cavity feedback outgoing mirror composition, because the laser of external cavity feedback outgoing mirror feedback can have feedback effect to the laser that luminous point produces, thus had corresponding selection to the optical maser wavelength of semiconductor luminous point and pattern, make semiconductor laser cling to each luminous point laser of bar and the balzed grating, laser that glitters and form conjugation, simultaneously, effect due to drift angle prism makes the laser of different wave length on balzed grating, have identical blaze angle, the sharp combiner of each luminous point on bar bar is made to become a luminous point laser, and form a line at the quick shaft direction of semiconductor laser, eventually pass wavelength coupling device, close Shu Weiyi laser beam.
Described a kind of high light beam quality semiconductor laser array beam merging apparatus, multi-wavelength high power semi-conductor storehouse is a bar bar composition, or multiple bar bar composition.
Described a kind of high light beam quality semiconductor laser array beam merging apparatus, multi-wavelength high power semi-conductor storehouse is a bar bar composition, or multiple bar bar composition.
Described a kind of high light beam quality semiconductor laser array beam merging apparatus, the wavelength of multi-wavelength high power semi-conductor storehouse is arbitrary wavelength combinations.
Described a kind of high light beam quality semiconductor laser array beam merging apparatus, drift angle prism is the different level crossing composition of eyeglass two-end thickness, or the cylindrical mirror composition that two-end thickness is different.
Described a kind of high light beam quality semiconductor laser array beam merging apparatus, focus lamp is biconvex mirror, or meniscus lens, or planoconvex lens, or cylindrical mirror.
Described a kind of high light beam quality semiconductor laser array beam merging apparatus, balzed grating, is reflecting grating, or transmission grating.
Described a kind of high light beam quality semiconductor laser array beam merging apparatus, the density of balzed grating, is 100/more than mm^2.
Described a kind of high light beam quality semiconductor laser array beam merging apparatus, external cavity feedback outgoing mirror is level crossing, or cylindrical mirror, or the shaped mirror of the small sphere of exterior rearview mirror composition of corresponding bar bar position.
Described a kind of high light beam quality semiconductor laser array beam merging apparatus, laser beam merging apparatus is made up of three corner reflectors, or is made up of plane mirror, or is made up of cylindrical mirror, or is made up of spherical reflector.
Basic ideas of the present invention: the Laser output face of each bar bar of composition semiconductor stack is coated with the high transmittance film of respective wavelength, so the laser of external cavity feedback outgoing mirror reflection can have feedback effect to luminescence, thus had corresponding selection to the optical maser wavelength of semiconductor luminous point and pattern, make semiconductor laser cling to each luminous point laser of bar and the balzed grating, laser that glitters and form conjugation, make the sharp combiner of each luminous point on bar bar become a luminous point laser.Wavelength for the laser of difference bar bar is different, is placed with corresponding drift angle prism, has identical blaze angle by the laser of the different wave length of drift angle prism after balzed grating, can form a line at the quick shaft direction of semiconductor laser at its exiting surface place.Last laser, through multi-wavelength beam merging apparatus, closes Shu Weiyi laser beam.
Accompanying drawing illustrates:
Fig. 1: a kind of high light beam quality semiconductor laser array beam merging apparatus schematic diagram.
In figure: Ln1, Ln2 represents for the bar bar corresponding drift angle prism in semiconductor laser storehouse respectively, L1 is focus lamp, L2 is diffraction grating, L3 is external cavity feedback outgoing mirror, L4 is laser beam light combination mirror group, and T1, T2, T3 are the laser of the bar bar of corresponding composition semiconductor stack, and T is the laser after light combination mirror.
Embodiment:
In the exocoel that the semiconductor laser storehouse that form of semiconductor laser bar bar being coated with the high transmittance film of respective wavelength by output face is positioned over and clings to bar by semiconductor laser, form relative to drift angle prism Ln1 and Ln2, the focus lamp L1 of the design of bar bar optical maser wavelength, balzed grating, L2 and external cavity feedback outgoing mirror L3.The laser T1 sent by bar bar, T2, the laser that T3 feeds back due to external cavity feedback outgoing mirror L3 can have feedback effect to the laser that luminous point produces, thus had corresponding selection to the optical maser wavelength of semiconductor luminous point and pattern, make semiconductor laser cling to each luminous point laser of bar and the balzed grating, laser that glitters and form conjugation, simultaneously, effect due to drift angle prism Ln1 and Ln2 makes the laser of different wave length have identical blaze angle on balzed grating, L2, the sharp combiner of each luminous point on bar bar is made to become a luminous point laser, and form a line at the quick shaft direction of semiconductor laser, eventually pass wavelength coupling device L4, close Shu Weiyi laser beam T, thus make the laser beam of a semiconductor laser storehouse by becoming the laser beam of a luminous point after shaping, as Fig. 1.
Be described in detail a kind of high light beam quality semiconductor laser array beam merging apparatus provided by the present invention above, above explanation just understands method of the present invention and core concept thereof for helping; Meanwhile, for one of ordinary skill in the art, according to thought of the present invention, all will change in specific embodiments and applications, in sum, this description should not be construed as limitation of the present invention.
Claims (9)
1. a high light beam quality semiconductor laser array beam merging apparatus, it is characterized in that: multi-wavelength high-power semiconductor laser storehouse is placed on to be clung in the semiconductor laser exocoel that bar, drift angle prism, focus lamp, balzed grating, and external cavity feedback outgoing mirror form by semiconductor laser and carries out shaping, output beam is the single-point laser light beam in the arrangement of semiconductor laser quick shaft direction, and then through laser beam merging apparatus, sharp combiner is a laser beam.
2. a kind of high light beam quality semiconductor laser array beam merging apparatus described by claim 1, is characterized in that: multi-wavelength high power semi-conductor storehouse is a bar bar composition, or more than one bar bar composition.
3. a kind of high light beam quality semiconductor laser array beam merging apparatus described by claim 1, is characterized in that: the wavelength of multi-wavelength high power semi-conductor storehouse is the wavelength combinations of different semiconductor laser bar bar.
4. a kind of high light beam quality semiconductor laser array beam merging apparatus described by claim 1, is characterized in that: drift angle prism be eyeglass two-end thickness different level crossing composition, or two-end thickness different cylindrical mirror composition.
5. a kind of high light beam quality semiconductor laser array beam merging apparatus described by claim 1, is characterized in that: focus lamp is biconvex mirror, or meniscus lens, or planoconvex lens, or cylindrical mirror.
6. a kind of high light beam quality semiconductor laser array beam merging apparatus described by claim 1, is characterized in that: balzed grating, is reflecting grating, or transmission grating.
7. a kind of high light beam quality semiconductor laser array beam merging apparatus described by claim 1, is characterized in that: the incisure density of balzed grating, is more than 100gr/mm.
8. a kind of high light beam quality semiconductor laser array beam merging apparatus described by claim 1, is characterized in that: external cavity feedback outgoing mirror is level crossing, or cylindrical mirror, or the shaped mirror of the small sphere of exterior rearview mirror composition of corresponding bar position.
9. a kind of high light beam quality semiconductor laser array beam merging apparatus described by claim 1, it is characterized in that: laser beam merging apparatus is made up of three corner reflectors, or be made up of plane mirror, or be made up of cylindrical mirror, or be made up of spherical reflector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201410766652.6A CN104600566A (en) | 2014-12-11 | 2014-12-11 | High beam quality of semiconductor laser array beam combination device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410766652.6A CN104600566A (en) | 2014-12-11 | 2014-12-11 | High beam quality of semiconductor laser array beam combination device |
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| CN104600566A true CN104600566A (en) | 2015-05-06 |
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| CN201410766652.6A Pending CN104600566A (en) | 2014-12-11 | 2014-12-11 | High beam quality of semiconductor laser array beam combination device |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104953466A (en) * | 2015-06-09 | 2015-09-30 | 北京凯普林光电科技有限公司 | Laser light source and design method thereof |
| CN105406353A (en) * | 2015-12-11 | 2016-03-16 | 长春理工大学 | Multiple single-tube beam-combination semiconductor lasers based on grating isosceles prism |
| CN105552713A (en) * | 2016-02-24 | 2016-05-04 | 苏州大学 | Multi-wavelength external cavity laser for non-fluorescence raman spectrometer |
| WO2019047330A1 (en) * | 2017-09-06 | 2019-03-14 | 中国科学院上海光学精密机械研究所 | Grating wavefront inclined dispersion compensation device |
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| CN101404385A (en) * | 2008-10-31 | 2009-04-08 | 福州高意通讯有限公司 | Semiconductor array laser light beam reshaping structure |
| CN103931125A (en) * | 2011-07-14 | 2014-07-16 | 祥茂光电科技股份有限公司 | Wavelength-selectable laser device and apparatus and system including same |
| CN104009395A (en) * | 2014-05-06 | 2014-08-27 | 深圳市博锐浦科技有限公司 | Optical fiber coupling module with multiple single-diode semiconductor lasers |
| US20140240831A1 (en) * | 2012-11-28 | 2014-08-28 | TeraDiode, Inc. | Stabilization of High-Power WBC Systems |
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2014
- 2014-12-11 CN CN201410766652.6A patent/CN104600566A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101404385A (en) * | 2008-10-31 | 2009-04-08 | 福州高意通讯有限公司 | Semiconductor array laser light beam reshaping structure |
| CN103931125A (en) * | 2011-07-14 | 2014-07-16 | 祥茂光电科技股份有限公司 | Wavelength-selectable laser device and apparatus and system including same |
| US20140240831A1 (en) * | 2012-11-28 | 2014-08-28 | TeraDiode, Inc. | Stabilization of High-Power WBC Systems |
| CN104009395A (en) * | 2014-05-06 | 2014-08-27 | 深圳市博锐浦科技有限公司 | Optical fiber coupling module with multiple single-diode semiconductor lasers |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104953466A (en) * | 2015-06-09 | 2015-09-30 | 北京凯普林光电科技有限公司 | Laser light source and design method thereof |
| CN104953466B (en) * | 2015-06-09 | 2018-08-24 | 北京凯普林光电科技股份有限公司 | A kind of design method of laser light source and laser light source |
| CN105406353A (en) * | 2015-12-11 | 2016-03-16 | 长春理工大学 | Multiple single-tube beam-combination semiconductor lasers based on grating isosceles prism |
| CN105406353B (en) * | 2015-12-11 | 2018-06-19 | 长春理工大学 | More single tubes based on grating isosceles prism close beam semiconductor laser |
| CN105552713A (en) * | 2016-02-24 | 2016-05-04 | 苏州大学 | Multi-wavelength external cavity laser for non-fluorescence raman spectrometer |
| CN105552713B (en) * | 2016-02-24 | 2018-10-16 | 苏州大学 | Multi-wavelength outside cavity gas laser for unstressed configuration Raman spectrometer |
| WO2019047330A1 (en) * | 2017-09-06 | 2019-03-14 | 中国科学院上海光学精密机械研究所 | Grating wavefront inclined dispersion compensation device |
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