CN104393486B - A kind of external cavity semiconductor laser optical path adjustment device and method of adjustment - Google Patents
A kind of external cavity semiconductor laser optical path adjustment device and method of adjustment Download PDFInfo
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- CN104393486B CN104393486B CN201410804687.4A CN201410804687A CN104393486B CN 104393486 B CN104393486 B CN 104393486B CN 201410804687 A CN201410804687 A CN 201410804687A CN 104393486 B CN104393486 B CN 104393486B
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Abstract
A kind of external cavity semiconductor laser optical path adjustment device and method of adjustment, are related to external cavity semiconductor laser.Adjusting apparatus is equipped with semiconductor gain device, collimation lens, beam splitter, beam splitter, condenser lens, CCD camera and display screen.Method of adjustment：Beam splitter is moved into light path；By directive beam splitter after the laser alignment after semiconductor gain device lasing；Multiorder diffractive occurs on beam splitter for transmitted light, is fed back to first-order diffraction light near semiconductor gain inner cavity Cavity surface by the angle for adjusting beam splitter；It will be focused on by adjusting condenser lens by the reflected light of beam splitter in CCD camera, multi-dimensional state micro-adjustment is carried out by collimation lens and beam splitter, adjust size and the position of feedback hot spot, feedback hot spot and inner cavity Cavity surface finally are completely superposed, obtains the optimum state of outside cavity gas laser light path；After the completion of light path adjustment, beam splitter is removed into light path again, avoids the output light loss of outside cavity gas laser.
Description
Technical field
The present invention relates to external cavity semiconductor laser, more particularly, to by the light path China and foreign countries of external cavity semiconductor laser
Add microcell graphical analysis light path, one that the inner cavity Cavity surface of exocoel feedback light spot and semiconductor gain device is observed and analyzed
Kind external cavity semiconductor laser optical path adjustment device and method of adjustment.
Background technology
External cavity semiconductor laser is feedback, modeling element and a kind of laser light made using external optical element as light
Source, such laser light source have the advantages that spectral purity is high, excitation wavelength is tunable, efficient, good reliability, optic communication,
The fields such as optical measurement, optical storage have broad application prospects.Wherein, external feedback light is accurately fed back to semiconductor to increase
Beneficial device active region, is allowed to interact with active medium, output power, stability to external cavity semiconductor laser etc.
With important influence.
The light path debugging of traditional external cavity semiconductor laser, is by the collimating status of direct visual perception light beam and anti-
The position of light is presented, by the multi-dimensional state micro-adjustment to external optical element, makes external feedback light and semiconductor gain device
Inner cavity Cavity surface overlaps, so as to cause the unexpected increase of output beam intensity, finally realizes exocoel lasing.Using conventional method tune
During trying external cavity optical path, it can not sentence to feeding back to the size of hot spot and specific location in semiconductor gain inner cavity Cavity surface
It is disconnected, hardly result in the optimum state of external cavity optical path, it is difficult to the Best Coupling in realization between exocoel.Therefore, exploitation is a kind of convenient
Practical external cavity optical path adjustment method, it is particularly important for the performance of lifting external cavity semiconductor laser.
Guo Shuguang (the compact photon source research Nankai University Ph.D. Dissertations of Guo Shuguang, in April, 2001,26-28) is situated between
Continued some work and content in terms of improving laser performance, including：80Onm wave bands Littrow and Littman are tied
The experimental study of the weak coupling Tunable External Cavity Semiconductor Laser of structure；External cavity semiconductor laser is systematically analyzed without mode hopping tune
Influence of the position error of humorous structure to tuning without mode skip scope simultaneously devises a set of a wide range of tuning without mode skip cavity semiconductor
Laser experiments system；Analyze the three classes sine mechanism in grating spectrum instrument and devise achievable wavelength linear scale
Littrow and Littman external cavity semiconductor laser mechanical tuning devices；Using optical fiber Bragg raster as external cavity feedback element after
To the performance study of tunable fiber grating external cavity semiconductor laser；Littrow grating tunable technologies are applied to and mix Yb3+It is double
Characteristic in cladded-fiber laser；Describe two kinds of optical ballast.And it is given at 8OOnm wave band weak coupling gratings
There is the adjustment method for referring to external cavity semiconductor laser in the experimental study part of external cavity semiconductor laser.
The content of the invention
It is an object of the invention to provide a kind of external cavity semiconductor laser optical path adjustment device and method of adjustment.
The external cavity semiconductor laser optical path adjustment device be equipped with semiconductor gain device, collimation lens, beam splitter, point
Optical element, condenser lens, CCD camera and display screen；
The semiconductor gain device, collimation lens, beam splitter, beam splitter sequentially coaxially arrange, condenser lens and CCD
Video camera is sequentially arranged on the reflected light path of beam splitter, and the output port of CCD camera connects the input terminal of display screen.
The semiconductor gain device is the light emitting semiconductor device with the gain of light, includes but not limited to edge emitting and partly leads
Body laser, super-radiance light emitting diode, image intensifer etc..
The collimation lens is the optical mirror slip with optical alignment effect, the light beam that can send semiconductor gain device
Collimate as collimated light beam, including but not limited to non-spherical lens, cemented doublet, objective lens etc..
The beam splitter is less than 1mm for thickness, and incident beam can be divided into the optics member with reflection two-beam with transmission
Part, the transmission and the beam intensity ratio preferably 1: 1 of reflection two-beam；The beam splitter is installed on an articles holding table, can be in light path
Moved in and out in system, that is, light path system is moved it into when adjusting external cavity optical path, adjustment, which finishes, is moved out light path system, avoids
Light loss when outside cavity gas laser uses.It is negligible to move in and out beam splitter to external cavity optical path system since beam splitter thickness is smaller
The influence of system.
The beam splitter can use diffraction grating.
The condenser lens is the optical mirror slip with optical focus effect, can be focused the light beam in CCD camera, is wrapped
Include but be not limited to convex lens or planoconvex spotlight that focal length is 5cm etc..
The CCD camera is located in the focus of condenser lens, makes the inner cavity of external cavity feedback hot spot and semiconductor gain device
Cavity surface images in CCD camera surface.
The display screen is connected with CCD camera, and the exocoel that observable is imaged in CCD camera on a display screen is anti-
Present hot spot and the image of semiconductor gain inner cavity Cavity surface.
The external cavity semiconductor laser optical path adjustment device can increase the hot spot after beam splitter is fed back and semiconductor
The inner cavity Cavity surface of beneficial device intuitively reflects on a display screen, on a display screen under the guidance of image, can collimation lens and point
Optical element carry out multi-dimensional state micro-adjustment so that be conveniently adjusted feedback hot spot size and position, finally make feedback hot spot and
Semiconductor gain inner cavity Cavity surface overlaps, and optimal outside cavity gas laser light path is obtained, so as to improve external cavity semiconductor laser
Performance.
The external cavity semiconductor laser optical path adjusting method, comprises the following steps：
Step 1：When carrying out light path adjustment to external cavity semiconductor laser, by translating or rotating articles holding table by beam splitter
Move into light path；
Step 2：Directive beam splitter after laser after semiconductor gain device lasing is collimated by collimation lens, this
When a part of laser intensity pass through beam splitter directive beam splitter, after another part laser intensity is reflected by beam splitter directive focus on
Lens；
Step 3：Multiorder diffractive occurs on beam splitter for transmitted light, by adjusting the angle of beam splitter by first-order diffraction
Light is fed back near semiconductor gain inner cavity Cavity surface；
Step 4：It will be focused on by adjusting condenser lens by the reflected light of beam splitter in CCD camera, at this time aobvious
The inner cavity Cavity surface of semiconductor gain device and the external cavity feedback hot spot through beam splitter can be shown in display screen, passes through collimation
Lens and beam splitter carry out multi-dimensional state micro-adjustment, adjust size and the position of feedback hot spot, finally make feedback hot spot and interior
Chamber Cavity surface is completely superposed, and obtains the optimum state of outside cavity gas laser light path；
Step 5：After the completion of being adjusted to external cavity semiconductor laser light path, it will be divided by translating or rotating articles holding table again
Beam mirror removes light path, avoids the output light loss of outside cavity gas laser.
It is made of present invention could apply to Littrow, Li Teman grating external cavity semiconductor lasers and other elements
In light path used in external cavity semiconductor laser, for aiding in its light path to adjust.
The present invention is imaged the inner cavity Cavity surface of exocoel feedback light spot and semiconductor gain device by CCD camera,
So as to be able to observe that size and position of the feedback hot spot in semiconductor gain inner cavity Cavity surface on a display screen, by right
Form exocoel optical element carry out multi-dimensional state micro-adjustment, external feedback hot spot is accurately fed back to active area, be allowed to
Effective interaction occurs for active medium, is conducive to improve the performances such as power, the stability of external cavity semiconductor laser.
The present invention can intuitively reflect the inner cavity Cavity surface of external cavity feedback hot spot and semiconductor gain device on a display screen,
The two coincidence is conveniently adjusted, contributes to external cavity semiconductor laser light path to adjust, and then improves external cavity light feedback degree of regulation, is changed
Kind external cavity semiconductor laser performance.It is of the invention simple, directly perceived, effective, there is stronger practical value.
Brief description of the drawings
Fig. 1 is the structure diagram of the external cavity semiconductor laser optical path adjustment device embodiment 1 of the present invention.
Fig. 2 is the schematic diagram that the present invention applies (embodiment 2) in the type grating external cavity semiconductor laser light path of Littrow.
Embodiment
The present invention is described in further detail with reference to the accompanying drawings and detailed description.
Embodiment 1
Referring to Fig. 1, it is saturating that external cavity semiconductor laser optical path adjustment device embodiment is equipped with semiconductor gain device 1, collimation
Mirror 2, beam splitter 3, beam splitter 4, condenser lens 5, CCD camera 6 and display screen 7.
The semiconductor gain device 1, collimation lens 2, beam splitter 3, beam splitter 4 sequentially coaxially arrange, condenser lens 5
It is sequentially arranged at CCD camera 6 on the reflected light path of beam splitter 3, the output port of CCD camera 6 connects the input of display screen 7
End.
The semiconductor gain device 1 is the light emitting semiconductor device with the gain of light, includes but not limited to edge emitting half
Conductor laser, super-radiance light emitting diode, image intensifer etc..
The collimation lens 2 is the optical mirror slip with optical alignment effect, the light that can send semiconductor gain device 1
Beam collimation is collimated light beam, includes but not limited to non-spherical lens, cemented doublet, objective lens etc..
The beam splitter 3 is less than 1mm for thickness, and incident beam can be divided into the optics member with reflection two-beam with transmission
Part, the transmission and the beam intensity ratio preferably 1: 1 of reflection two-beam.
The beam splitter 3 is installed on an articles holding table, can be moved in and out in light path system, that is, when adjusting external cavity optical path
Move it into light path system, adjustment, which finishes, is moved out light path system, light loss when avoiding the outside cavity gas laser from using.Due to dividing
3 thickness of beam mirror is smaller, negligible to move in and out influence of the beam splitter 3 to exocoel light path system.
The beam splitter 4 uses diffraction grating.
The condenser lens 5 is the optical mirror slip with optical focus effect, can be focused the light beam in CCD camera 6,
Including but not limited to focal length is convex lens or planoconvex spotlight of 5cm etc..
The CCD camera 6 is located in the focus of condenser lens 5, makes external cavity feedback hot spot and semiconductor gain device 1
Inner cavity Cavity surface images in 6 surface of CCD camera.
The display screen 7 is connected with CCD camera 6, and observable images in outer in CCD camera 6 on display screen 7
Chamber feeds back the image of 1 inner cavity Cavity surface of hot spot and semiconductor gain device.
The external cavity semiconductor laser optical path adjustment device can increase the hot spot after beam splitter 4 is fed back and semiconductor
The inner cavity Cavity surface of beneficial device 1 is intuitively reflected on display screen 7, can collimation lens 2 under the guidance of 7 epigraph of display screen
Multi-dimensional state micro-adjustment is carried out with beam splitter 4, so as to be conveniently adjusted size and the position of feedback hot spot, finally makes feedback light
Spot and semiconductor gain inner cavity Cavity surface overlap, and obtain optimal outside cavity gas laser light path, swash so as to improve cavity semiconductor
The performance of light device.
The external cavity semiconductor laser optical path adjusting method of the present embodiment, comprises the following steps：
Step 1：When carrying out light path adjustment to external cavity semiconductor laser, by translating or rotating articles holding table by beam splitter
3 move into light path；
Step 2：Directive beam splitter after laser after 1 lasing of semiconductor gain device is collimated by collimation lens 2
3, at this time a part of laser intensity pass through 3 directive beam splitter 4 of beam splitter, after another part laser intensity is reflected by beam splitter 3
Directive condenser lens 5；
Step 3：On beam splitter 4 multiorder diffractive occurs for transmitted light, and level-one is spread out by the angle for adjusting beam splitter 4
Light is penetrated to feed back near 1 inner cavity Cavity surface of semiconductor gain device；
Step 4：It will be focused in CCD camera 6 by the reflected light of beam splitter 3 by adjusting condenser lens 5, existed at this time
The inner cavity Cavity surface of semiconductor gain device 1 and the external cavity feedback hot spot through beam splitter 4 can be shown on display screen 7, is passed through
Collimation lens 2 and beam splitter 4 carry out multi-dimensional state micro-adjustment, adjust size and the position of feedback hot spot, finally make feedback
Hot spot and inner cavity Cavity surface are completely superposed, and obtain the optimum state of outside cavity gas laser light path；
Step 5：After the completion of being adjusted to external cavity semiconductor laser light path, it will be divided by translating or rotating articles holding table again
Beam mirror 3 removes light path, avoids the output light loss of outside cavity gas laser.
In implementation, which, which can shine semiconductor gain device 1, hot spot after beam splitter 4 is fed back and partly leads
1 inner cavity Cavity surface of body gain device is intuitively reflected on display screen 7, is conveniently adjusted the two coincidence, is contributed to cavity semiconductor to swash
The light path adjustment of light device, and then external cavity light feedback degree of regulation is improved, improve external cavity semiconductor laser performance.
A kind of external cavity semiconductor laser optical path adjustment device provided by the invention and method of adjustment can be applied to Li Te
Sieve, Li Teman grating external cavity semiconductor lasers and light path used in the external cavity semiconductor laser that is made of other elements
In, to improve the performance of external cavity semiconductor laser.
Embodiment 2
As shown in Fig. 2, similar to Example 1, difference lies in beam splitter to use diffraction grating 41 for it, and the present invention is applied
In the light path of Littrow type grating external cavity semiconductor laser, mainly include：Semiconductor gain device 11, collimation lens 21,
Beam splitter 31, diffraction grating 41, condenser lens 51, CCD camera 61 and display screen 71.
The semiconductor gain device 11 is the light emitting semiconductor device with the gain of light, can select optical cavity face and is coated with increasing
The edge-emission semiconductor laser diode of permeable membrane.
The collimation lens 21 is the optical mirror slip with optical alignment effect, can send semiconductor gain device 11
Beam collimation is collimated light beam, and the non-spherical lens that numerical aperture is 0.5 may be selected.
The beam splitter 31 is less than 1mm for thickness, and incident beam can be divided into transmission and reflection with certain beam intensity ratio
The optical element of two-beam, it is 1 that transmission, which may be selected, with reflected light intensity ratio:1.
The beam splitter 31 is installed on a rotation articles holding table, can be moved in and out in light path system, that is, be adjusted exocoel
Beam splitter 31 is moved into external cavity optical path during light path, adjustment, which finishes, is moved out light path system, when avoiding the outside cavity gas laser from using
Light loss.It is negligible to move in and out influence of the beam splitter 31 to exocoel light path system since 31 thickness of beam splitter is smaller.
The diffraction grating 41 is the optical element with dispersion light splitting effect, its first-order diffraction light can be along incident light direction
Feed back to semiconductor gain device.
The condenser lens 51 is the optical mirror slip with optical focus effect, can focus the light beam in CCD camera 61
In, the convex lens that focal length is 5cm may be selected.
The CCD camera 61 is located in the focus of condenser lens 51, makes external cavity feedback hot spot and semiconductor gain device
11 inner cavity Cavity surface images in 61 surface of CCD camera.
The display screen 71 is connected with CCD camera 61, and observable images in CCD camera on display screen 71
The image of 11 inner cavity Cavity surface of external cavity feedback hot spot and semiconductor gain device in 61.
A kind of external cavity semiconductor laser optical path adjusting method provided in this embodiment, comprises the following steps：
Step 1：, will by rotating articles holding table when carrying out light path adjustment to Littrow type grating external cavity semiconductor laser
Beam splitter 31 is moved into light path.
Step 2；11 operating current of semiconductor gain device is tuned up to its lasing, send out laser by collimation lens 21 into
Row collimation after directive beam splitter 31, at this time a part of laser intensity pass through 31 directive diffraction grating 41 of beam splitter, another part swashs
Directive condenser lens 51 after light light intensity is reflected by beam splitter 31；The beam splitter 31 for selecting thickness to be less than 1mm herein, avoids removing and divides
External cavity optical path is caused to change after beam mirror 31.
Step 3：On diffraction grating 41 multiorder diffractive occurs for transmitted light, by adjusting the angle of diffraction grating 41 by level-one
Diffraction light is fed back near the inner cavity Cavity surface of semiconductor gain device 11.
Step 4：It will be focused on by adjusting condenser lens 51 by the reflected light of beam splitter 31 in CCD camera 61, this
When the inner cavity Cavity surface of semiconductor gain device 11 and the external cavity feedback light through diffraction grating 41 can be shown on display screen 71
Spot, carries out multi-dimensional state micro-adjustment by collimation lens 21 and diffraction grating 41, diffraction pattern and inner cavity Cavity surface can be made complete
Overlap, obtain the optimum state of external cavity optical path.
Step 5：, will by rotating articles holding table after the completion of being adjusted to Littrow type grating external cavity semiconductor laser light path
Beam splitter 31 removes light path, avoids the output light loss of outside cavity gas laser.
Claims (5)
- A kind of 1. external cavity semiconductor laser optical path adjustment device, it is characterised in that equipped with semiconductor gain device, collimation lens, Beam splitter, beam splitter, condenser lens, CCD camera and display screen；The semiconductor gain device, collimation lens, beam splitter, beam splitter sequentially coaxially arrange, condenser lens and CCD shootings Machine is sequentially arranged on the reflected light path of beam splitter, and the output port of CCD camera connects the input terminal of display screen；The semiconductor gain device is the light emitting semiconductor device with the gain of light, including edge-emission semiconductor laser, super Radiation light emitting diode, image intensifer；The collimation lens is the optical mirror slip with optical alignment effect, the beam collimation that can send semiconductor gain device For collimated light beam, including non-spherical lens, cemented doublet, objective lens；The beam splitter is less than 1mm for thickness, is that incident beam is divided into the optical element with transmission with reflection two-beam；Institute State beam splitter to be installed on an articles holding table, moved in and out in light path system, that is, light is moved it into when adjusting external cavity optical path Road system；The beam splitter uses diffraction grating.
- A kind of 2. external cavity semiconductor laser optical path adjustment device as claimed in claim 1, it is characterised in that the transmission with it is anti- The beam intensity ratio for penetrating two-beam is 1: 1.
- A kind of 3. external cavity semiconductor laser optical path adjustment device as claimed in claim 1, it is characterised in that the condenser lens For the optical mirror slip acted on optical focus, can focus the light beam in CCD camera, including the convex lens that focal length is 5cm.
- A kind of 4. external cavity semiconductor laser optical path adjustment device as claimed in claim 1, it is characterised in that the CCD camera In the focus of condenser lens, the inner cavity Cavity surface of external cavity feedback hot spot and semiconductor gain device is set to image in CCD camera table Face.
- 5. a kind of external cavity semiconductor laser optical path adjusting method, it is characterised in that using as described in any in Claims 1 to 4 A kind of external cavity semiconductor laser optical path adjustment device, the method for adjustment comprise the following steps：Step 1：When carrying out light path adjustment to external cavity semiconductor laser, beam splitter is moved into by translating or rotating articles holding table In light path；Step 2：Directive beam splitter after laser after semiconductor gain device lasing is collimated by collimation lens, at this time one Fraction of laser light light intensity passes through beam splitter directive beam splitter, and directive focuses on saturating after another part laser intensity is reflected by beam splitter Mirror；Step 3：Multiorder diffractive occurs on beam splitter for transmitted light, by the angle for adjusting beam splitter that first-order diffraction light is anti- It is fed near semiconductor gain inner cavity Cavity surface；Step 4：It will be focused on by adjusting condenser lens by the reflected light of beam splitter in CCD camera, at this time in display screen On show the inner cavity Cavity surface of semiconductor gain device and the external cavity feedback hot spot through beam splitter, by collimation lens and Beam splitter carries out multi-dimensional state micro-adjustment, adjusts size and the position of feedback hot spot, finally makes feedback hot spot and inner cavity Cavity surface It is completely superposed, obtains the optimum state of outside cavity gas laser light path；Step 5：After the completion of being adjusted to external cavity semiconductor laser light path, by translating again or rotating articles holding table by beam splitter Light path is removed, avoids the output light loss of outside cavity gas laser.
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| CN105406334B (en) * | 2015-12-29 | 2018-07-27 | 中国科学院西安光学精密机械研究所 | Spatial beam coupled system and its closed loop control method |
| CN105529613A (en) * | 2016-01-15 | 2016-04-27 | 北京工业大学 | 852nm ultra-narrow line width external-cavity semiconductor laser |
| CN108152909A (en) * | 2017-12-25 | 2018-06-12 | 北京凯普林光电科技股份有限公司 | A kind of device and method of grating in adjusting capsulation structure for semiconductor laser |
| CN110098559A (en) * | 2018-01-29 | 2019-08-06 | 山东华光光电子股份有限公司 | A kind of interior device and method collimated of semiconductor laser shell |
| CN111076675B (en) * | 2019-12-31 | 2021-05-07 | 长光卫星技术有限公司 | Method and device for quickly adjusting plane wavefront zero compensation detection optical path of concave oblate sphere |
| CN111880321B (en) * | 2020-08-13 | 2022-08-16 | 福建师范大学 | Self-adaptive parallelism adjusting system |
| CN113985621B (en) * | 2021-10-13 | 2023-10-10 | 中国科学院上海光学精密机械研究所 | Method for adjusting large-caliber off-axis parabolic mirror based on grating beam splitter |
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