CN112909730A

CN112909730A - Laser device

Info

Publication number: CN112909730A
Application number: CN201911134439.2A
Authority: CN
Inventors: 田新团; 李建军
Original assignee: Qingdao Hisense Laser Display Co Ltd
Current assignee: Qingdao Hisense Laser Display Co Ltd
Priority date: 2019-11-19
Filing date: 2019-11-19
Publication date: 2021-06-04
Anticipated expiration: 2039-11-19
Also published as: CN116885548A; CN112909730B

Abstract

The application discloses laser belongs to the technical field of photoelectricity. The laser includes: a base plate; a pipe shell; the bottom plate and the tube shell are integrally formed to form an accommodating space, a plurality of laser chips and the reflecting prism are attached to the bottom plate in the accommodating space, and the reflecting prism is used for emitting light rays emitted by the laser chips in a direction far away from the bottom plate; the collimating lens structure is fixed on the tube shell and used for receiving the light rays emitted by the reflecting prism and collimating the light rays; the annular upper cover is fixed on the pipe shell; the supporting frame is fixed to the upper cover at the edge of the periphery of the supporting frame, the middle area of the supporting frame is provided with n first hollow areas, and n is a positive integer; a light-transmitting sealing layer covers one side, far away from the bottom plate, of the first hollow-out area; the first hollow-out area is used for transmitting light emitted by the at least one laser chip. The lower problem of the bottom plate roughness of laser instrument has been solved in this application. The application is used for light emission.

Description

Laser device

Technical Field

The application relates to the field of photoelectric technology, in particular to a laser.

Background

With the development of the optoelectronic technology, the laser is widely used.

The laser comprises a base plate, a tube shell, a plurality of laser chips, a plurality of reflecting prisms, an annular upper cover, a supporting frame, sealing glass and a collimating lens structure. The tube shell, the plurality of laser chips and the plurality of prisms are all positioned on the bottom plate, and the tube shell is annular and surrounds the plurality of laser chips and the plurality of reflecting prisms; the plurality of laser chips correspond to the plurality of reflection prisms one by one, each prism is positioned on the light-emitting side of the corresponding laser chip, and the reflection prisms are used for reflecting the light rays emitted by the corresponding laser chips; the upper cover, the supporting frame and the sealing glass are sequentially overlapped on one side, away from the base plate, of the laser chip, and the collimating lens structure is located on one side, away from the base plate, of the sealing glass. In the related art, when assembling a laser, a tube shell needs to be welded on a base plate in a high-temperature environment, then a laser chip and a reflecting prism are attached on the base plate, and then an upper cover, a support frame, sealing glass and a collimating lens structure are sequentially arranged on the tube shell.

However, when the case is welded to the bottom plate, the bottom plate is likely to be wrinkled, and the flatness of the bottom plate is poor.

Disclosure of Invention

The application provides a laser, can solve the relatively poor problem of planarization of the bottom plate of laser. The technical scheme is as follows:

the laser includes:

a base plate;

a pipe shell;

the bottom plate and the pipe shell are integrally formed and form an accommodating space,

in the accommodating space, a plurality of laser chips and a reflecting prism are attached on the bottom plate,

the reflecting prism is used for emitting the light rays emitted by the laser chip along the direction far away from the bottom plate;

the collimating lens structure is fixed on the tube shell and used for receiving the light rays emitted by the reflecting prism and collimating the light rays;

the annular upper cover is fixed on the pipe shell;

the supporting frame is fixed to the upper cover at the edge of the periphery of the supporting frame, the middle area of the supporting frame is provided with n first hollow areas, and n is a positive integer;

a light-transmitting sealing layer covers one side, far away from the bottom plate, of the first hollow area;

the first hollowed-out area is used for transmitting light rays emitted by at least one laser chip.

The beneficial effect that technical scheme that this application provided brought includes at least:

in the laser instrument that this application provided, tube and bottom plate integrated into one piece, and then need not to weld the tube on the bottom plate under high temperature environment, avoided the condition that the fold appears in the bottom plate in the welding process, so the roughness of bottom plate is higher.

In addition, the flatness of the bottom plate is high, so that the reliability of arrangement of the laser chip and the reflecting prism on the bottom plate is high, light rays emitted by the laser chip can be emitted according to a preset light emitting angle, and the light emitting effect of the laser is improved. The welding between the tube shell and the bottom plate is not needed, so that the preparation process of the laser is simplified, and the preparation cost of the laser is reduced.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

Fig. 1 is a schematic structural diagram of a laser provided in an embodiment of the present application;

FIG. 2 is a schematic structural diagram of another laser provided in an embodiment of the present application;

fig. 3 is a schematic structural diagram of another laser provided in an embodiment of the present application;

fig. 4 is a schematic partial structural diagram of a laser provided in an embodiment of the present application;

FIG. 5 is a schematic diagram of a portion of another laser according to an embodiment of the present disclosure;

FIG. 6 is a schematic diagram of a partial structure of another laser provided in an embodiment of the present application;

FIG. 7 is a schematic structural diagram of another laser provided in an embodiment of the present application;

FIG. 8 is a schematic diagram of a portion of another laser according to an embodiment of the present disclosure;

fig. 9 is a schematic diagram of a partial structure of a laser according to another embodiment of the present application;

fig. 10 is a schematic structural diagram of a laser according to another embodiment of the present application;

FIG. 11 is a schematic diagram of another laser structure provided in another embodiment of the present application;

FIG. 12 is a schematic view of a target axisymmetric pattern provided by another embodiment of the present application;

FIG. 13 is a schematic diagram of another laser according to another embodiment of the present application;

fig. 14 is a schematic structural diagram of a base plate according to an embodiment of the present application.

Detailed Description

To make the objects, technical solutions and advantages of the present application more clear, embodiments of the present application will be described in further detail below with reference to the accompanying drawings.

With the development of the photoelectric technology, the application of the laser is wider and wider, for example, the laser can be applied to the aspects of welding process, cutting process, laser projection and the like, and the requirements on the flatness of the base plate of the laser and the light emitting effect of the laser are higher and higher at present. The following embodiment of the application provides a laser, can make the roughness of the bottom plate of laser higher.

Fig. 1 is a schematic structural diagram of a laser provided in an embodiment of the present application. As shown in fig. 1, the laser 10 includes: a base plate 101, a package 102, a plurality of laser chips 103, at least one reflective prism 104, an annular upper cover 106, a support frame 1052, a light transmissive encapsulant 1052, and a collimating lens structure 1071.

The package 102 and the bottom plate 101 are integrally formed to form an accommodating space, the package 102, the plurality of laser chips 103 and the at least one reflection prism 104 are all located on the bottom plate 101, and the package 102 is annular and surrounds the plurality of laser chips 103 and the at least one reflection prism 104. A cover 106 secures the surface of the housing 102 away from the base 101. The peripheral edge of the support frame 1051 is fixed to the upper cover 106, and the middle area of the support frame 1051 has n first hollow areas W, where n is a positive integer. The first hollow area W is used for transmitting the light emitted from the at least one laser chip 103. The light-transmitting sealing layer 1052 covers a side of the n first hollow areas W away from the bottom plate 101. Collimating lens structure 1071 is affixed to housing 102 and is configured to receive and collimate light exiting through reflecting prism 104. It should be noted that, collimating the light, that is, converging the light, makes the divergence angle of the light smaller, and is closer to the parallel light.

Alternatively, the collimating lens structure 1071 may include: at least one collimating lens a. For example, fig. 1 illustrates that the collimating lens structure 1071 includes a plurality of collimating lenses a, in this case, the collimating lens structure 1071 may further include a carrier Z for carrying the plurality of collimating lenses a.

The reflecting prism 104 is configured to emit the light emitted from the laser chip 103 in a direction away from the bottom plate 101, and each first hollow area W is configured to transmit the light emitted from at least one laser chip 103. Illustratively, each reflection prism 104 in the laser 10 corresponds to one or more laser chips 103, each first hollow area W corresponds to one or more laser chips 103, the plurality of collimating lenses a in the collimating lens structure 1071 correspond to all the laser chips 103 in the laser 10 one-to-one, the reflection prism 104 is located on the light exit side of the corresponding laser chip 103, and the reflection prism 104 is configured to reflect the light emitted from the corresponding laser chip 103 to the first hollow area W corresponding to the laser chip 103. Each first hollow area W can transmit the light emitted from the laser chip 103 corresponding to the first hollow area W.

It should be noted that, in fig. 1, each of the reflection prisms 104 corresponds to one of the laser chips 103, that is, each of the reflection prisms 104 is used for emitting the light emitted from one of the laser chips 103 in a direction away from the base plate 101. It is illustrated that n is 4, that is, the middle area of the supporting frame 1051 has 4 first hollow areas W, and each first hollow area W corresponds to 5 laser chips 103, that is, each first hollow area W is used for transmitting light emitted by 5 laser chips. Optionally, there may also be a reflective prism 104 in the laser 10 corresponding to the plurality of laser chips 103; n may also be 1, 2 or 3 or even more, and each hollow area W may also correspond to 1, 2, 3 or 4 laser chips, which is not limited in this embodiment of the application.

In the laser 10 shown in fig. 1, the light emitted from each laser chip 103 may be emitted to the corresponding reflection prism 104, and reflected on the surface of the reflection prism 104 close to the laser chip 103, and further emitted to the first hollow area W corresponding to the laser chip 103, and emitted to the collimating lens a corresponding to the laser chip 103 after passing through the first hollow area W. In the laser 10 shown in fig. 1, each first hollow area W can transmit the light emitted from its corresponding 5 laser chips 105.

It should be noted that, in the related art, the tube shell and the bottom plate are heated in the process of welding the tube shell on the bottom plate, and the high-temperature expansion coefficients of the tube shell and the bottom plate are usually different, and the stresses in the tube shell and the bottom plate are mutually pulled, so that the bottom plate is deformed, and the flatness of the bottom plate is low. In the embodiment of the application, the pipe shell and the base plate are integrally formed, so that the pipe shell is not required to be welded on the base plate in a high-temperature environment, the deformation of the base plate caused by high-temperature welding is avoided, and the flatness of the base plate is guaranteed.

To sum up, in the laser instrument that this application embodiment provided, tube and bottom plate integrated into one piece, and then need not to weld the tube on the bottom plate under high temperature environment, avoided the condition that the fold appears in the bottom plate in the welding process, so the roughness of bottom plate is higher.

Alternatively, the laser chip 103 may be disposed on the base plate 101 through a heat sink, which is not labeled in fig. 1. The heat sink may be made of a material having a large thermal conductivity, and the heat sink may allow heat generated when the laser chip 103 emits light to be more rapidly dissipated.

In order to prevent the laser chip, the reflecting prism, and other structures from being corroded by water and oxygen in the outside air and ensure the service life of the laser, the laser chip, the reflecting prism, and other structures need to be arranged in a sealed space. In the embodiment of the present application, the bottom plate 101, the tube housing 102, the upper cover 106, the supporting frame 1051, and the light-permeable sealing layer 1052 may together form a sealed accommodating space.

Alternatively, the laser chip 103 may be disposed on the base plate 101 through a heat sink, which is not labeled in fig. 1 and 2. The heat sink may be made of a material having a large thermal conductivity, and the heat sink may allow heat generated when the laser chip 103 emits light to be more rapidly dissipated.

Fig. 2 is a schematic structural diagram of another laser provided in an embodiment of the present application, fig. 3 is a schematic structural diagram of another laser provided in an embodiment of the present application, fig. 2 is an exploded structural diagram of the laser shown in fig. 3, and fig. 3 is a schematic diagram of a section b-b' in the laser shown in fig. 2. Referring to fig. 2 and 3, the laser 10 may further include a ring-shaped bracket 109 welded to a side of the package 102 away from the base 101. Alternatively, the surface of the cartridge 102 remote from the base plate 101 may be coated with a layer of kovar material (not shown) and the bracket 109 may be welded to the surface of the kovar material remote from the base plate 101.

Alternatively, the thermal conductivity of the base plate 101 and the package 102 is large, and thus heat generated by the laser chip 103 when emitting light can be dissipated through the base plate 101 relatively quickly. Illustratively, the material of the base 101 and the envelope 102 may comprise copper, such as copper oxide or copper oxide-free.

Optionally, the rigidity of the bracket 109 is higher, so that the rigidity of the whole laser can be increased, and the risk of damage to the laser can be reduced. Illustratively, the material of the support 109 includes one or more of stainless steel and kovar. Alternatively, the thickness of the holder 109 in the axial direction of the holder 109 ranges from 0.5 mm to 1.5 mm. For example, the thickness of the support 109 may be 0.5 mm or 1 mm.

It should be noted that the structure secured to the housing 102 may be made of kovar or stainless steel, and may be, for example, the upper cover 106. Because the kovar material and the stainless steel cannot be welded with the copper material by the parallel sealing technique, that is, when the base plate 101 and the case 102 are integrally formed and the material for manufacturing is copper, the upper cover 106 cannot be directly welded on the case 102 by the parallel sealing technique. The kovar material layer has been plated on the surface that the bottom plate 101 was kept away from to pipe shell 102 in this application embodiment, welds support 109 on the surface that the bottom plate 101 was kept away from on the kovar material layer, and the material of support 109 includes one or more in stainless steel and the kovar material, and then can adopt parallel seal welding technique to weld the surface that the bottom plate 101 was kept away from to support 109 with upper cover 106, has guaranteed that upper cover 106 is effectively fixed on pipe shell 102.

The support frame 1051 in the laser 10 is described below:

optionally, in this embodiment, the material of the support frame 1051 may be kovar, such as iron-nickel-cobalt alloy, stainless steel, or other alloys. The light-transmitting sealing layer 1052 may be made of sealing glass, or may be made of other light-transmitting and highly reliable materials, such as a resin material, which is not limited in this embodiment of the present application.

Optionally, the first hollowed-out area in the supporting frame may correspond to at least two laser chips, and at this time, the area that is not hollowed out in the supporting frame is small, so that light emitted by the laser chips and lost due to being blocked by the supporting frame is reduced, the light emitted by the laser chips is utilized more, and the light-emitting brightness and the light-emitting effect of the laser are improved.

Optionally, with continued reference to fig. 1 or fig. 2, the first hollow-out areas W in the supporting frame 1051 may be in a shape of a strip, and the n first hollow-out areas W may be sequentially arranged along the width direction of the first hollow-out area W. The support frame 1051 having such a structure can be called a herringbone support frame.

It should be noted that in the supporting frame 1051 shaped like a Chinese character 'mu', the un-hollowed-out region between the adjacent first hollowed-out regions W can support the light-transmitting sealant 1052 thereon, so as to prevent the middle portion of the light-transmitting sealant 1052 from collapsing, ensure the firmness of the light-transmitting sealant 1052, and further ensure the sealing effect of the accommodating space surrounded by the bottom plate 101, the tube shell 102, the upper cover 106, the supporting frame 1051 and the light-transmitting sealant 1052.

Alternatively, with continued reference to fig. 1 or fig. 2, the plurality of laser chips 103 in the laser 10 may include a plurality of rows and a plurality of columns of laser chips 103, that is, the plurality of laser chips 103 may be arranged in a plurality of rows and a plurality of columns. For example, the x direction in fig. 1 and 2 may be a column direction of the rows and columns of laser chips 103, and the y direction may be a row direction of the rows and columns of laser chips 103. Each of the first hollow areas W in the supporting frame 1051 may correspond to at least one row of the laser chips 103, that is, each of the first hollow areas W may be used for transmitting light emitted from at least one row of the laser chips 103.

It should be noted that fig. 1 and fig. 2 take an example that each first hollow area W corresponds to only one row of laser chips for transmitting the light emitted from the row of laser chips 103. Optionally, the first hollow-out region W may also exist in the support frame 1051, and may correspond to two rows or three rows of laser chips, or each first hollow-out region W in the support frame 1051 may also correspond to two rows or three rows of laser chips, which is not limited in this embodiment of the application.

Fig. 4 is a schematic partial structural diagram of a laser according to an embodiment of the present disclosure. As shown in fig. 4, n is 1, that is, the middle region of the support frame 1051 has only one first hollow region W. The first hollow area W may correspond to all the laser chips 103 in the laser 10, and the light emitted from each laser chip 103 may be emitted through the first hollow area W after being reflected by the corresponding reflection prism 104. The support frame 1051 having such a structure can be called a square-shaped support frame.

It should be noted that there is no portion shielding the light emitted from the laser chip 103 in the square supporting frame, and the light emitted from the laser chip 103 can be fully utilized, so as to further improve the brightness of the light emitted from the laser and improve the light emitting effect of the laser.

It should be further noted that in the embodiment of the present application, the shielding of the light emitted from the laser chip by the non-hollowed-out region in the supporting frame can be considered less, so that the setting density of the laser chip in the laser device is higher, the size of the laser device can be reduced, and the miniaturization of the laser device is facilitated. Compared with lasers with the same volume in the related art, as more laser chips can be arranged in the laser provided in the embodiment of the application, the laser can emit more light rays, and the light rays emitted by the laser have higher brightness and stronger intensity.

In addition, in the embodiment of the application, since only a small number of hollow areas need to be arranged on the supporting frame, the flatness of the surface of the supporting frame away from the bottom plate can be ensured, and the flatness can be smaller than 0.3 mm. Further, the inclination angle when the light-transmitting sealing layer is provided on the support frame is small, and may be, for example, less than or equal to 0.5 degrees. Because the inclination angle of the light-transmitting sealing layer is smaller, the optical path of light emitted by the laser chip in the light-transmitting sealing layer can be reduced, the absorption of the light-transmitting sealing layer to the light is reduced, and the utilization rate of the light is improved.

Optionally, a brightness enhancement film may be attached to at least one of the surface of the light transmissive sealing layer 1052 close to the bottom plate 101 and the surface far from the bottom plate 101 to improve the light output brightness of the laser.

Fig. 5 is a partial structural diagram of another laser provided in an embodiment of the present application, fig. 5 is a schematic diagram of a section b-b ' in the structure shown in fig. 4, and fig. 4 only illustrates a position of the section b-b ' in the support frame 1051, and does not illustrate a position of the section b-b ' in other structures. It should be noted that fig. 5 may also be a schematic view of a section b-b 'of the support frame 1051 and the light transmissive sealing layer 1052 in fig. 1 or fig. 2, that is, a schematic view of a section b-b' in the support frame structure in a herringbone shape may also be as shown in fig. 5.

As shown in any one of fig. 3 to 5, the peripheral edge of the light-transmissive sealing layer 1052 may be soldered to the surface of the support frame 1051 away from the bottom plate 101 by a low-temperature glass solder H. For example, the low-temperature glass solder H may be enclosed in a ring shape and enclose the light-transmissive sealing layer 1052, so that the side surface of the light-transmissive sealing layer 1052 is soldered to the surface of the support frame 1051 away from the bottom plate 101.

It should be noted that the light-transmissive sealing layer 1052 may be a plate-shaped structure, and the light-transmissive sealing layer 1052 has two larger surfaces and a plurality of smaller surfaces, wherein the plurality of smaller surfaces are a plurality of sides of the light-transmissive sealing layer 1052. Alternatively, the two larger surfaces may be parallel. Alternatively, the two larger surfaces may be parallel to the plane of the base plate 101.

Referring to fig. 4 and 5, the middle region of the supporting frame 1051 is recessed toward the bottom plate 101 relative to the peripheral edge of the supporting frame 1051. When the support frame 1051 is square, that is, annular, the middle region of the support frame 1051 refers to the inner region of the support frame 1051, and the peripheral edge of the support frame 1051 refers to the outer region of the support frame 1051. At least two steps J1 are formed at the connection position of the middle area of the support frame 1051 and the peripheral edge of the support frame 1051 at the side of the support frame 1051 far away from the bottom plate 101, that is, the connection position has at least two steps J1. It should be noted that fig. 4 and 5 both illustrate that the connection has three steps J1, and optionally, the number of the steps J1 may also be 4, 5, or even more. Optionally, the number of the steps may also be less than 3, for example, the number of the steps may also be 2 or 1.

In the embodiment of the present application, due to the existence of the step J1 at the joint between the middle region of the supporting frame 1051 and the peripheral edge of the supporting frame 1051, the contact area between the low-temperature glass solder H and the surface of the supporting frame 1051 far away from the bottom plate 101 is relatively large, so that the adhesion firmness of the light-transmitting sealing layer 1052 and the supporting frame 1051 can be improved, and the sealing effect of the accommodating space in the laser device is further improved.

In the embodiment of the present application, the material of the low-temperature glass solder H includes low-temperature glass, that is, low-melting glass. Optionally, the low temperature glass has a melting temperature of less than 450 degrees, which may be 400 degrees. Alternatively, the low temperature glass may be a lead-free low melting point glass; the low-temperature glass can be D40. Optionally, the low-temperature glass may also be a lead-containing low-melting-point glass, which is not limited in the embodiments of the present application. In the present embodiment, the unit "degree" used to indicate the temperature is all referred to as "degree centigrade".

When the support frame 1051 and the light-transmitting sealing layer 1052 are welded by using the low-temperature glass solder H, the low-temperature glass powder may be first placed in a mold with a desired shape (such as a ring shape) to be compacted, and then the structure composed of the compacted low-temperature glass powder is placed in a low-temperature furnace to be sintered, so as to obtain the low-temperature glass solder H with a desired shape. In the embodiment of the present application, after the annular low-temperature glass solder H is obtained, the low-temperature glass solder H may be placed on the support frame 1051 and surround the light-transmitting sealing layer 1052. Further, the structure composed of the support frame 1051, the translucent sealing layer 1052, and the low-temperature glass solder H is collectively placed in a low-temperature furnace and sintered, so that the low-temperature glass solder H melts and fills the gap between the edge of the translucent sealing layer 1052 and the support frame 1051, thereby welding the support frame 1051 and the translucent sealing layer 1052. The edge of the light-transmitting sealing layer 1052 and the supporting frame 1051 can be tightly attached by low-temperature glass solder H, so that the tightness of the accommodating space enclosed by the bottom plate 101, the tube shell 102, the upper cover 106, the supporting frame 1051 and the light-transmitting sealing layer 1052 is ensured.

In the embodiment of the application, the low-temperature glass solder H surrounds the light-transmitting sealing layer 1052 during welding, and can also limit the light-transmitting sealing layer 1052, so that the light-transmitting sealing layer 1052 is prevented from being displaced during welding with the supporting frame 1051, and the welding precision of the light-transmitting sealing layer 1052 is ensured. It should be noted that the melting point of the brightness enhancement film attached to the surface of the light-transmissive sealing layer 1052 is usually higher than 450 ℃, and the low-temperature glass solder is used to solder the light-transmissive sealing layer 1052 to avoid damage to the brightness enhancement film.

Optionally, for the support frame 1051 in the shape of the Chinese character 'mu', before the light-transmitting sealing layer 1052 is placed on the support frame 1051, an adhesive material may be further coated on the un-hollowed-out area between the adjacent first hollowed-out areas W in the middle area of the support frame 1051, so as to further improve the adhesive strength between the support frame 1051 and the light-transmitting sealing layer 1052. The un-hollowed-out areas between adjacent first hollowed-out areas W may be referred to as support crossbars, and the adhesive material may include glass adhesive or epoxy sealant. Optionally, the low-temperature glass solder in the embodiment of the present application may also be replaced by other sealing materials, such as epoxy sealant or other sealing glues, which is not limited in the embodiment of the present application.

It should be noted that, in the related art, the support frame has a plurality of small grid-shaped panes, and a separate small glass needs to be correspondingly adhered to each small pane, so that the adhering process is complex, the adhering efficiency is low, and the adhering effect is difficult to control. In the embodiment of the application, the bonding is only carried out at the peripheral edge of the supporting frame and the position of the supporting transverse bar, or the bonding is only carried out at the peripheral edge of the supporting frame, so that the bonding process is simplified, the bonding efficiency is improved, and the bonding effect is easier to control. Adopt low temperature glass solder to seal support frame 1051 and printing opacity sealing layer 1052 in this application embodiment, this sealed effect is better, can improve the gas tightness of laser instrument, further prolongs the life of laser instrument.

In the embodiment of the present application, the upper cover 106 is used for carrying the support frame 1051. The upper cover 106 may be a square frame with an inner area recessed toward the bottom plate, and the thickness of each position of the upper cover 106 is the same, such as 0.2 mm. Alternatively, the thickness may also be less than 0.15 mm, such as 0.12 mm. The upper cover 106 may be formed by a stamping process using an annular plate-like structure.

For example, the light-transmissive sealing layer 1052 may be welded to the supporting frame 1051, and then the combined structure of the supporting frame 1051 and the light-transmissive sealing layer 1052 may be placed in the inner region of the recess of the upper cover 106, and the combined structure and the upper cover 106 may be welded by using a sealing material. The combined structure and the upper cover 106 are welded to obtain a structure called an upper cover assembly, and in this case, the base plate 101, the case 102 and the upper cover assembly may together enclose a sealed space. Optionally, in this embodiment of the application, the supporting frame 1051 may be welded to the upper cover 106, and then the light-transmitting sealing layer 1052 is welded to the supporting frame 1051, so as to obtain the upper cover assembly.

Optionally, the sealing material here may also be a low-temperature glass solder, and the process of soldering with the low-temperature glass solder may refer to the above-mentioned soldering process for the support frame 1051 and the light-transmitting sealing layer 1052, which is not described herein again in this embodiment of the present application. Optionally, the sealing material may also be an epoxy glue seal, a silver-tin solder, or the like, which is not limited in this embodiment.

Fig. 6 is a partial structural schematic view of another laser provided in an embodiment of the present application, fig. 7 is a structural schematic view of another laser provided in an embodiment of the present application, and fig. 6 shows only an upper cover assembly in the laser, that is, the upper cover 106, the support frame 1051, and the light-transmissive sealing layer 1052 in the laser. Fig. 7 shows a laser including the structure shown in fig. 6, and fig. 6 is an exploded view of the laser shown in fig. 7 after the upper cover assembly is turned over by 180 degrees. Referring to fig. 6 and 7, the upper cover 106 is ring-shaped, the inner area q2 of the surface of the upper cover 106 close to the bottom plate 101 is flat, the outer area q1 of the surface of the upper cover 106 close to the bottom plate 101 is fixed on the case 102, if the outer area q1 is attached to the surface of the case 102 far from the bottom plate 101, and the inner area q2 is attached to the surface of the support frame 1051 far from the bottom plate 101. Optionally, the lateral region q1 is recessed relative to the medial region q 2. Optionally, the surface of the upper cover 106 away from the bottom plate 101 is planar.

In fig. 6, a support frame 1051 in a mesh-like shape is shown as an example, and the support frame 1051 may be a square-like support frame as described above.

Alternatively, the upper cover 106 shown in fig. 6 may be obtained by etching the outer region on one surface of the annular plate-like structure, and the thickness of the annular plate-like structure may be the same as that of the portion of the upper cover where the inner region q2 is located. Optionally, the thickness of the portion of the upper cover 106 where the outer region q1 is located may be less than or equal to 0.15 mm, for example, the thickness may be 0.12 mm, and the thickness of the portion of the upper cover 106 where the inner region q2 is located may range from 0.2 mm to 0.5 mm, for example, the thickness may be 0.4 mm.

In forming the upper cover 106 shown in fig. 6, the inner region q2 on the surface of the upper cover 106 close to the bottom plate 101 does not need to be processed, and therefore the flatness of the inner region q2 is high. And then the laminating degree of difficulty of carriage 1051 and this inboard region q2 is lower, and the laminating effect can be better, can further improve the sealed effect of upper cover subassembly.

Alternatively, after the upper cover 106 is manufactured, the peripheral edge of the support frame 1051 may be welded to the inside region q2 in the upper cover 106, and then the light transmissive sealing layer 1052 may be placed on the support frame 1051 from the side of the upper cover 106 away from the support frame 1051, and then the light transmissive sealing layer 1052 may be welded to the support frame 1051 to obtain the upper cover assembly. The outer area of the surface of cover 106 adjacent to base 101 may then be welded to the surface of housing 102 remote from base 101.

Alternatively, the inner region q2 and the surface of the support frame 1051 away from the base plate 101 may be bonded by a sealing material, and the outer region q1 and the surface of the package 102 away from the base plate 101 may be bonded by a parallel sealing process. The sealing material may be any of the sealing materials described above.

In the embodiment of the present invention, the upper cover 106 and the support frame 1051 are illustrated as two separate structures, and optionally, the upper cover 106 and the support frame 1051 may be integrally formed. For example, a plate-shaped structure may be etched, so as to obtain the integrated upper cover 106 and the supporting frame 1051.

The collimating lens structure 1071 in the laser 10 is described below.

It should be noted that, in this embodiment of the application, one side of the collimating lens structure 1071 away from the bottom plate 101 may have at least one convex arc surface bending towards the side away from the bottom plate 101, and a portion of each convex arc surface in the collimating lens structure 1071 may be regarded as a collimating lens a, and thus the collimating lens structure 1071 may include at least one collimating lens a. The collimating lens a may be a convex lens in a plano-convex form, the collimating lens a may have a convex arc surface and a plane, the plane may be parallel to the plate surface of the bottom plate 101 and disposed near the bottom plate 101, and the convex arc surface and the plane may be two opposite surfaces. The side of the collimating lens structure 1071 facing away from the base plate 101 may have each convex curve surface as a convex curve surface in one collimating lens a.

All the collimating lenses in the collimating lens structure 1071 correspond to all the laser chips 103 in the laser 10 one-to-one, and the reflecting prism 104 in the laser 10 is configured to reflect the light emitted from the corresponding laser chip 103 to the collimating lens corresponding to the laser chip 103. The light emitted from each laser chip 103 is reflected by the corresponding reflection prism 104 and then emitted to the corresponding collimating lens of the laser chip 103, and the light is converted into collimated light under the action of the collimating lens and then emitted.

There are many alternative arrangements of the collimating lens structure in the laser, and two of them are explained as follows:

in a first arrangement of the collimating lens structure, please refer to fig. 1 to 3 and fig. 7, the laser 10 only includes a collimating lens structure 1071, the collimating lens structure 1071 includes a plurality of collimating lenses a and a carrying member Z carrying the collimating lenses a, the collimating lenses a are located on a side of the carrying member Z away from the bottom plate 101, and the carrying member Z may be made of a transparent material. Alternatively, the plurality of collimator lenses a may be integrally formed with the carrier Z. Illustratively, the collimating lens structure 1071 may be prepared by means of mold pressing.

In a second arrangement of the collimating lens structure, please refer to the schematic diagrams of fig. 8 to 11, wherein fig. 8 is a schematic partial structure diagram of another laser provided in the embodiment of the present application; fig. 9 is a schematic diagram of a partial structure of a laser according to another embodiment of the present application; fig. 10 is a schematic structural diagram of a laser according to another embodiment of the present application, fig. 10 is an exploded structural diagram of fig. 11, fig. 11 is a schematic diagram of a section b-b' of the laser shown in fig. 10, and fig. 10 and 11 each include the structure shown in fig. 8.

Referring to fig. 8 to 11, the laser 10 may include: an annular support member 1073, a carrier structure 1072, and a plurality of collimating lens structures 1071. The supporting part 1073 is fixed on the case 102, the peripheral edge of the carrying structure 1072 can be fixed on the supporting part 1073, the middle area of the carrying structure 1072 has a plurality of second hollow areas K, and the plurality of collimating lens structures 1071 are covered on one side of the plurality of second hollow areas K away from the bottom plate 101 in a one-to-one correspondence manner. The collimating lens structure 1071 is used for collimating and emitting the light emitted from the at least one laser chip 103 reflected by the reflecting prism 104.

It should be noted that fig. 8 illustrates an example in which each collimating lens structure 1071 includes a collimating lens (not labeled in fig. 8). Alternatively, as shown in fig. 9, one collimating lens structure 1071 may include a plurality of collimating lenses a, in which case, the collimating lens structure 1071 may further include a carrier Z carrying the plurality of collimating lenses a. Alternatively, the plurality of collimator lenses a may be connected to each other as an integral structure (this is not illustrated in the embodiments of the present application). For example, the second hollow-out regions K in the carrying structure 1072 in fig. 9 may be in a shape of a bar, and the plurality of second hollow-out regions K in the carrying structure 1072 may be sequentially arranged along a width direction of the second hollow-out regions K. At this time, each of the collimating lens structures 1071 covering the second hollowed-out area K may include a plurality of collimating lenses a.

Alternatively, the plurality of laser chips 103 in the laser 10 may include a plurality of rows and a plurality of columns of laser chips 103, and each collimating lens structure may correspond to at least one row of laser chips 103. That is, each collimating lens structure 1071 may be configured to collimate light emitted from at least one row of laser chips 103 reflected by the reflecting prism 104.

Alternatively, the second hollow-out region K may be rectangular, oval or in a target axisymmetric shape shown in fig. 12, the target axisymmetric shape is surrounded by two opposite straight sides and two opposite arc sides, and the target axisymmetric shape is a convex figure. The target axis symmetry shape may be a racetrack shape. Fig. 8 and 10 illustrate the second hollow area K as a rectangle. For example, the length of the rectangle may be 5 mm, the width may be 3 mm, and the length and the width of the rectangle may also be other values, which is not limited in this embodiment of the application. It should be noted that the shape of the second hollow-out area K may be designed according to the light type of the light emitted by the laser chip 103 after being reflected by the corresponding reflection prism 104, and it is only necessary to ensure that the light emitted by the laser chip 103 can be reflected by the corresponding reflection prism 104 and then can penetrate through the second hollow-out area K.

Optionally, the shape of the collimating lens structure 1071 corresponds to the shape of the second hollowed-out area K it covers. For example, the bottom surface of the collimating lens structure 1071 may have the same shape as the second hollow area K covered therewith. In the embodiment of the present application, when the collimating lens structure 1071 includes only one collimating lens, the collimating lens structure 1071 can be obtained by performing a trimming process on an existing circular lens. When the bottom surface of the collimating lens structure 1071 is rectangular, it can be obtained by cutting off four edges of a circular lens; when the bottom surface of the collimating lens structure 1071 has a shape that is axisymmetric to the target, it can be obtained by cutting off opposite edges of a circular lens.

Alternatively, in the above-mentioned second arrangement manner of the collimating lens structures, each collimating lens structure 1071 may be independently arranged above the second hollow-out area K to be covered by the collimating lens structure 1071. For the structure shown in fig. 8, each collimating lens structure 1071 may be independently disposed on one second hollowed-out region K. Therefore, when the collimator lens structure 1071 is provided, the position of the collimator lens structure 1071 can be adjusted according to the light beam emitted from the laser chip 103 corresponding to the collimator lens structure 1071. The setting position of the collimating lens structure 1071 can be adjusted, so that the light rays emitted from the laser chip 103 at the central position pass through the vertex of the collimating lens in the collimating lens structure 1071, the collimating effect of the collimating lens structure 1071 on the light beams is better, and the parallelism of the emergent light rays is better.

Alternatively, in the second arrangement of the collimating lens structures, each collimating lens structure 1071 may be welded to the carrier structure 1072 by a sealing material, and then the carrier structure 1072 with the collimating lens structures welded thereto may be placed in an inner area of the recess of the support member 1073, and the carrier structure 1072 and the support member 1073 may be welded by the sealing material. Optionally, in this embodiment of the application, the carrying structure 107 may be welded to the supporting member 1073, and then the collimating lens structure 1071 and the carrying structure 1072 may be welded.

It should be noted that the structure of the supporting member 1073 may be the same as that of the upper cover 106, and for the supporting member 1073, refer to the above description of the upper cover 106; when the second hollow area K in the carrying structure 1072 is used for transmitting the light emitted from the plurality of laser chips, the carrying structure 1072 and the support frame 1051 may have the same structure, and the description of the carrying structure 1072 may refer to the description of the support frame 1051; for the assembling or welding manner of the carrying structure 1072 and the supporting component 1073, reference may be made to the above-mentioned description of the assembling or welding manner of the supporting frame 1051 and the upper cover 106, and no further description is given in this embodiment of the present application.

In the present embodiment, the collimating lens structure 1071 may be disposed in various positions relative to the cover assembly.

In a first positional relationship, the collimating lens structure 1071 is located between the upper cover assembly and the base plate 101. For example, with continued reference to fig. 7, 10 and 11, the collimating lens structure 1071 may be located in a sealed accommodating space formed by the bottom plate 101, the package 102, the upper cover 106, the supporting frame 1051 and the light-transmissive sealing layer 1052, that is, the collimating lens structure 1071 is located between the upper cover assembly and the laser chip. At this time, the collimating lens structure 1071 is used for collimating the light reflected by the reflecting prism 104 and then emitting the collimated light to the n first hollow areas W in the supporting frame 1051.

Alternatively, in this first positional relationship, the outer region of the surface of upper cover 106 close to base plate 101 may abut the surface of case 102 remote from base plate 101. The inner annular surface of the shell 102 has a boss T. The boss T is used to support the collimating lens structure 1071. Alternatively, the inner annular surface of the shell 102 may have only one boss T, which may be annular, which may be coaxial with the shell 102. The orthographic projection of this boss T on the base plate 101 may surround the laser chip 103 and the reflection prism 104 on the base plate 101. Alternatively, the inner annular surface of the shell 102 may also have a plurality of bosses T, which may be distributed at least on two opposing faces of the inner annular surface of the shell 102.

As shown in fig. 7, when the laser 10 includes only one collimating lens structure 1071, the collimating lens structure 1071 may overlap a boss T provided on the inner annular surface of the package 102; when the laser 10 includes a plurality of collimating lens structures 1071, a carrying structure 1072, and a support member 1073, as shown in fig. 11, the outer region of the surface of the support member 1073 near the base plate 101 may overlap a boss T provided on the inner annular surface of the package 102.

In the second positional relationship, the collimating lens structure 1071 is located on the side of the cover assembly away from the base plate 101. For example, with continued reference to fig. 1, 2, and 3, the collimating lens structure 1071 may be located on a side of the light transmissive sealing layer 1052 remote from the bottom plate 101. At this time, the collimating lens structure 1071 is used to collimate the light emitted from the n first hollow areas W in the supporting frame 1051.

Alternatively, in this second positional relationship, as shown in fig. 3, when the laser 10 includes only one collimating lens structure 1071, the outer region of the surface of the upper cover 106 close to the base plate 101 may be attached to the surface of the package 102 far from the base plate 101, and the collimating lens structure 1071 may be directly attached to the surface of the upper cover assembly far from the base plate 101 by using an adhesive material.

Optionally, fig. 13 is a schematic structural diagram of another laser provided in another embodiment of the present application. When the laser 10 includes a plurality of collimating lens structures 1071, carrier structures 1072, and support members 1073, the inner annular surface of the envelope 102 has a plateau T, as shown in fig. 13. For the boss T in the second positional relationship, reference may be made to the introduction of the boss T in the first positional relationship, and details of the embodiment of the present application are not repeated herein. As shown in fig. 13, an outer region of the surface of upper cover 106 close to base plate 101 may be in abutment with the surface of boss T provided on the inner circumferential surface of case 102 away from base plate 101, and an outer region of the surface of support member 1073 close to base plate 101 may be in abutment with the surface of case 102 away from base plate 101.

In the above embodiments of the present application, the bottom plate 101, the package 102, the upper cover 106, the support frame 1051, and the translucent sealing layer 1052 form a sealed accommodating space as an example. Alternatively, when the laser 10 includes only one collimating lens structure 1071, the base plate 101, the package 102, and the collimating lens structure 1071 may form a closed accommodating space; when the laser 10 includes a plurality of collimating lens structures 1071, carrying structures 1072, and supporting members 1073, the base plate 101, the package 102, the collimating lens structures 1071, the carrying structures 1072, and the supporting members 1073 may also form a closed accommodating space. When the collimating lens structure 1071 is used to form a sealed accommodating space, the laser 10 may not include the upper cover 106, the supporting frame 1051, and the light-transmitting sealing layer 1052.

It should be noted that in the embodiment of the present application, when the collimating lens structure 1071 is located in the sealed accommodating space formed by the bottom plate 101, the package 102, the upper cover 106, the supporting frame 1051 and the light-transmitting sealing layer 1052, the distance between the collimating lens structure 1071 and the laser chip 103 can be reduced. Because the light that laser instrument chip 103 sent is the toper light, has certain divergence angle, and collimating lens structure 1071 is more close to laser instrument chip 103, and the facula that forms when the light directive collimating lens structure 1071 that laser instrument chip 103 jetted out is less, and the facula of the parallel beam who forms after collimating lens adjusts the light direction in collimating lens structure 1071 also can be littleer, and then can promote the collimation degree of the light that laser instrument 10 jetted out. Moreover, since the light spot formed on the collimating lens structure 1071 by the light beam emitted to the collimating lens structure 1071 is small, the area of the collimating lens in the collimating lens structure 1071 can be made smaller, and the entire volume of the collimating lens structure 1071 can be made smaller.

In addition, since the light emitted from the laser chips 103 can reach the collimating lens structure 1071 with a smaller distance, the light mixing between the light emitted from different laser chips 103 is reduced, the distance between the laser chips 103 can be reduced, and the arrangement of the laser chips 103 can be more freely performed. Furthermore, the light-emitting requirements of lasers with different powers can be met, and the volume of the whole laser can be reduced.

It should be noted that, when the distance between the collimating lens structure 1071 and the laser chip 103 is decreased, the curvature of the collimating lens in the collimating lens structure 1071 may also be decreased accordingly, that is, the curvature of the convex arc surface of the collimating lens is also decreased. The curvature of the collimating lens in the collimating lens structure 1071 may be reduced accordingly, such as when the collimating lens structure 1071 is positioned between the cover assembly and the laser chip 103. Alternatively, the curvature radius of the collimating lens (i.e. the curvature radius of the convex cambered surface in the collimating lens) may range from 1 mm to 4.5 mm.

The substrate 101 in the laser 10 will now be described.

Fig. 14 is a schematic structural diagram of a base plate according to an embodiment of the present application. Referring to fig. 14 and fig. 1 to 3, 7, 10, 11 or 13, the laser 10 may further include: conductive pins 108 extend through the side walls of the package 102. Referring to fig. 14, fig. 3, fig. 7, fig. 11 or fig. 13, the orthographic projection of the package 102 and the conductive leads 108 on the bottom plate 101 may be located at the peripheral edge Q2 of the bottom plate 101, and the orthographic projection of the laser chip 103 and the reflective prism 104 on the bottom plate 101 is located in the middle area C of the bottom plate 101; the peripheral edge Q2 of base plate 101 is recessed with respect to the central region C of base plate 101 toward the side away from package 102. In the embodiment of the present application, the orthographic projections of the conductive pins 108 on the bottom plate 101 are all located outside the middle area C of the bottom plate 101.

It should be noted that the conductive pin is electrically connected to an electrode of the laser chip to transmit an external power to the laser chip, so as to excite the laser chip to emit light.

Optionally, at least one step J2 is formed at the connection between the peripheral edge Q2 of the bottom plate 101 and the middle area C of the bottom plate 101 at the side of the bottom plate 101 close to the case 102, that is, the connection has at least one step J2. At least a partial orthographic projection of conductive lead 108 on base 101 is located on step J2, e.g., an orthographic projection of one of the two ends of conductive lead 108 extending into package 102 on base 101 is located on step J2.

Optionally, laser 10 includes a plurality of conductive leads 108, the plurality of conductive leads 108 being located on opposite sides of the central region C of base 101, and the junction of the peripheral edge Q2 of base 101 and the central region C of base 101 on the side of base 101 proximate package 102 having a plurality of steps J2 located on the opposite sides. Illustratively, the opposite sides are both sides of the middle area C of the bottom plate 101 in the y direction.

Fig. 3, 7, 11, or 13 illustrate an example in which the junction between the peripheral edge Q2 of the bottom plate 101 and the middle region C of the bottom plate 101 has only two steps J2 located on opposite sides of the middle region C.

Alternatively, the material of the bottom plate 101 may be a conductive material. For example, the material of the base plate 101 may include copper or aluminum. The chassis 101 allows heat generated from the laser chip 103 when emitting light to be more quickly dissipated to prevent damage to the laser chip 103 by the heat.

It should be noted that, in the embodiment of the present application, the peripheral edge Q2 of the bottom plate 101 where the orthographic projection of the conductive pin 108 on the bottom plate 101 is located is recessed towards the side away from the package 102 relative to the middle area C of the bottom plate 101, so that the situation that the conductive pin 108 is contacted with the bottom plate 101 to affect the conductive performance of the conductive pin is avoided, and the normal power supply to the laser chip is ensured. In addition, the connecting part of the peripheral edge of the bottom plate and the middle area of the bottom plate is provided with steps, so that the strength of the bottom plate can be ensured on the premise of ensuring the conductivity of the conductive pins.

Alternatively, the step in the base plate may have a height difference of 0.13 mm from the peripheral edge of the base plate, and the height difference of the middle region of the base plate with respect to the step may be 0.2 mm. It should be noted that the above-mentioned height difference is only an example, alternatively, the height difference between the step in the bottom plate and the peripheral edge of the bottom plate may have other values, and the height difference between the middle area of the bottom plate and the step may also have other values, such as 0.12 mm, 0.15 mm, or 0.3 mm.

Because the orthographic projection of the conductive pins on the bottom plate is positioned outside the middle area of the bottom plate in the embodiment of the application, the area of the middle area of the bottom plate is smaller, the flatness of the middle area of the bottom plate can be ensured more easily, and the middle area of the bottom plate can be flatter.

Optionally, the side wall of the package 102 has an opening, for example, the opening may have an aperture of 1.2 mm, and the conductive pin 108 may extend through the opening into the package 102. Alternatively, the diameter of the conductive pin 108 may be 0.55 millimeters; the shell 102 may be made of kovar.

The laser provided by the embodiments of the present application is described below with respect to an exemplary set of parameters in the laser.

In the related art, the overall thickness of the laser is 10.9 mm, the distance between the top surface of the laser chip and the light-transmitting sealing layer is 2.42 mm, the distance between the top surface of the laser chip and the collimating lens structure is 4.1 mm, and the thickness of the bottom plate is 3.45 mm.

In the embodiment of the present application, the collimating lens structure is located on a side of the light-transmitting sealing layer away from the bottom plate. When the light-transmitting sealing layer is supported by the support frame in the shape of the Chinese character mu, the whole thickness of the laser can be 9.3 millimeters, the distance between the top surface of the laser chip and the light-transmitting sealing layer is greater than or equal to 1.72 millimeters, the distance between the top surface of the laser chip and the collimating lens structure can be 2.42 millimeters, and the thickness of the bottom plate can be 3.45 millimeters. Wherein, the distance of the top surface of laser chip apart from collimating lens structure specifically indicates: and after the light emitted by the laser chip irradiates the corresponding reflecting prism, the distance from the central point of the light spot formed on the reflecting prism to the bottom surface of the collimating lens. When the light-transmitting sealing layer is supported by the square supporting frame, the whole thickness of the laser can be 8.8 mm, the distance between the top surface of the laser chip and the light-transmitting sealing layer can be 0.92 mm, the distance between the top surface of the laser chip and the collimating lens structure can be 2.62 mm, and the thickness of the bottom plate can be 3.45 mm.

Therefore, the laser provided by the embodiment of the application has the advantages that the whole thickness is small, the distance between the laser chip and the collimating lens is small, and the thinning and the miniaturization of the laser are facilitated.

In the laser provided by the embodiment of the application, the laser comprises a plurality of rows and columns of laser chips. The distance between adjacent laser chips in the first direction may be 2-4 mm, for example, 3 mm, and the first direction may be a light emitting direction of the laser chips. In a second direction perpendicular to the first direction, the distance between adjacent laser chips may be in a range of 3 to 6 mm, for example, may be 4 mm. Therefore, the laser chips in the laser device can be arranged more compactly, and the arrangement density of the laser chips is higher.

It should be noted that, the foregoing embodiments of the present application only illustrate several optional laser structures, and each component in the laser provided by the present application may be combined at will, so as to obtain lasers with different structures, and the present application does not limit the combination manner of each component. The components refer to a bottom plate, a tube shell, an upper cover, a supporting frame, a light-transmitting sealing layer, a collimating lens structure, a bearing structure, a supporting component and the like in the laser.

The above description is only exemplary of the present application and should not be taken as limiting, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.

Claims

1. A laser, characterized in that the laser comprises:

a base plate;

a pipe shell;

the pipe shell and the bottom plate are integrally formed and form an accommodating space,

the annular upper cover is fixed on the pipe shell;

2. The laser of claim 1, wherein a ring-shaped bracket is welded to a side of the package remote from the base plate, and a surface of the outer side region of the upper cover adjacent to the base plate is flush with a surface of the bracket remote from the base plate.

3. The laser of claim 2 wherein the surface of said housing remote from said base plate is coated with a layer of kovar material and said bracket is welded to the surface of said kovar material remote from said base plate.

4. A laser as claimed in claim 2 or claim 3 wherein the support comprises one or more of stainless steel and kovar.

5. The laser of any one of claims 2 to 4, wherein the thickness of the support in the direction of the axis of the support is in the range of 0.5 mm to 1.5 mm.

6. The laser of any one of claims 1 to 5, wherein the material of the base plate and the package comprises copper.

7. The laser of any one of claims 1 to 6, wherein an inner area of a surface of the upper cover adjacent to the base plate is planar,

the outer side area of the surface of the upper cover close to the bottom plate is attached to the surface of the pipe shell far away from the bottom plate, and the inner side area of the upper cover is attached to the surface of the support frame far away from the bottom plate.

8. The laser of claim 7, wherein the outer region is recessed relative to the inner region.

9. The laser according to any one of claims 1 to 8, wherein n is greater than or equal to 2, the first hollow areas are in a shape of a strip, the n first hollow areas are sequentially arranged along a width direction of the first hollow areas, and the first hollow areas are used for transmitting light emitted by at least two of the laser chips.

10. The laser device according to any one of claims 1 to 8, wherein n is 1, and the first hollow area is used for transmitting light emitted from the plurality of laser chips.