JP2010183002A - Semiconductor laser device, and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser device that has a configuration in which a cap provided so as to cover a semiconductor laser element is bonded by press fitting to a stem, and can solve the disadvantages associated with press fitting, and to provide a method of manufacturing the semiconductor laser device. <P>SOLUTION: The semiconductor laser device A1 includes: the stem having a plate-like base 11; a semiconductor laser element 2 supported by the stem 1 and emitting a laser beam; a cap 5 which has a cylindrical barrel 51, a top plate 52 formed on one end side of the barrel 51 and having an opening 52a and an opening end 53 formed on the other side of the barrel 51, and in which the opening end 53 is bonded to the base 11 by press-fitting so as to cover the semiconductor laser element 2; and a glass plate 8 attached so as to seal the opening 52a and allowing the laser beam from the semiconductor laser element 2 to pass through and be emitted to the outside. The glass plate 8 is attached on the laser beam emission direction side for the top plate 52. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention can be applied to a reading light source such as CD (Compact Disc), MD (Mini Disc), DVD (Digital Versatile Disc), CD-R / RW (Compact Disc Recordable / Rewritable) or DVD-R / RW (DVD). The present invention relates to a semiconductor laser device used for a writing light source such as Digital Versatile Disc Recordable / Rewritable and a manufacturing method thereof.

  An example of a conventional semiconductor laser device is shown in FIG. 11 (see, for example, Patent Document 1). The semiconductor laser device X shown in the figure includes a stem 91 including a base 91A and a block 91B, and a semiconductor laser element 92 and a light receiving element 93 mounted on the block 91B. The laser is directed upward in the figure. It emits light. The base 91A has a substantially circular plate shape. Two holes 91Aa are formed in the base 91A, and leads 94A and 94B are provided so as to penetrate these holes 91Aa. The lead 94A is electrically connected to the semiconductor laser element 92 via a wire, and the lead 94B is electrically connected to the light receiving element 93. The lead 94C is joined to the lower surface of the base 91A in the figure and serves as a so-called common terminal. A cylindrical cap 95 is provided so as to cover the upper portion of the block 91B and the leads 94A and 94B in the drawing. An opening 95 a is formed in the upper part of the cap 95, and a glass plate 96 (light transmitting member) that closes the opening 95 a is attached via an adhesive 98, for example. The glass plate 96 has translucency with respect to the laser light emitted from the semiconductor laser element 92. An outward flange 95b is provided at the lower end of the cap 95 in the figure, and is joined to the base 91A by resistance welding on the entire circumference of the outward flange 95b. Further, the hole 91Aa of the base 91A is filled with a low melting point glass 97 in a portion other than the leads 94A and 94B. Thus, the laser beam from the semiconductor laser element 92 can be emitted upward in the drawing, and the space defined by the base 91A and the cap 95 is hermetically sealed with respect to the space outside the semiconductor laser device X. ing. According to such a configuration, even when the semiconductor laser device X is used in a high humidity environment, it is possible to prevent the humidity around the semiconductor laser element 92 from increasing. Suitable for protection.

  When the semiconductor laser device X having the above-described configuration is installed in a pickup device, generally, a portion 91Ab positioned outside the outward flange 95b on the upper surface of the base 91A is used as a reference surface, and the portion 91Ab is used as a reference surface of the pickup device. It is fixed in a state where it is applied to a predetermined location. In a notebook personal computer or the like, the semiconductor laser device X is arranged in the pickup device so that the emission direction of the laser light is horizontal.

  FIG. 12 is a schematic configuration diagram showing an example of a state in which the semiconductor laser device X is mounted on the pickup device. The pickup device Y has a configuration in which, for example, a semiconductor laser device X, a beam splitter 102, a collimator lens 103, a reflection mirror 104, an objective lens 105, and optical components such as a diffraction grating (not shown) are arranged at appropriate positions on the case 101. It is said that. In the semiconductor laser device X, a reference surface (part 91Ab) of the base 91A is applied to the case 101 in a posture along the vertical direction in the drawing. When laser light is emitted in the lateral direction from the semiconductor laser device X fixed to the case 101, the laser light is transmitted to the DVD or CD via the beam splitter 102, collimator lens 103, reflection mirror 104, objective lens 105, and the like. And so on to focus on the surface of the optical disk 106. The reflected light from the optical disk 106 is collected through an objective lens 105, a reflection mirror 104, a collimator lens 103, a beam splitter 102, a condenser lens (not shown), and the like and detected by a photodetector (not shown).

  In recent years, with the downsizing and thinning of electronic devices such as notebook computers, there is a strong demand for thinning the pickup device Y. Since the semiconductor laser device X provided in the pickup device Y is disposed sideways, in order to reduce the thickness of the pickup device Y, a device having a small outer diameter (the outer diameter of the base 91A) is required. . In the semiconductor laser device X having the above configuration, the cap 95 has the outward flange 95b, and the outer diameter of the base 91A is made larger than the outer diameter of the outward flange 95b in order to secure the reference surface (part 91Ab). Therefore, it is difficult to reduce the outer diameter of the base 91A.

  On the other hand, in patent document 1, the structure which press-fits the lower end (opening edge part) of a cap with respect to a stem is also disclosed (refer FIG. 9 of the literature). According to the configuration in which the cap is press-fitted into the stem, as compared with the semiconductor laser device X described above with reference to FIG. 11, the outward flange 95b as a space for welding the cap is not required. The semiconductor laser device can be reduced in size.

  However, in the case of a configuration in which the cap is press-fitted into the stem, it is necessary to apply a predetermined load toward the stem side with respect to the cap on which the glass plate is previously attached. If it does so, in this press-fit, stress will act on the adhesion part of a cap or a glass plate, and there was a possibility that a glass plate might fall from a cap due to the stress concerned. Further, for example, if the size of each part such as the outer diameter and thickness of the cap is reduced in order to reduce the size of the semiconductor laser device, the stress on the above-described cap or glass plate adhesive portion tends to increase. As a result, the glass plate is easily dropped, which is an obstacle to miniaturization of the semiconductor laser device.

JP 2004-31900 A

  The present invention has been conceived under the above circumstances, and a semiconductor laser device having a configuration in which a cap provided so as to cover the semiconductor laser element is joined to the stem by press-fitting. It is an object of the present invention to provide a semiconductor laser device and a method for manufacturing the same that can eliminate the disadvantages associated with the above.

  In order to solve the above problems, the present invention takes the following technical means.

  The semiconductor laser device of the present invention includes a stem having a plate-shaped base, a semiconductor laser element that is supported by the stem and emits laser light, a cylindrical body, and an opening formed on one end of the body. A cap having an opening end formed on the other end side of the body portion, the cap having the opening end joined to the base by press fitting so as to cover the semiconductor laser element, and the opening And a light transmitting member that transmits the laser light from the semiconductor laser element and emits the laser light to the outside, wherein the light transmitting member is attached to the plate portion. The laser beam is attached on the emission direction side.

  According to such a configuration, the light transmission member is provided on the laser beam emission direction side with respect to the plate portion, that is, on the outer side of the cap. For this reason, the light transmission member can be attached to the cap after the cap is press-fitted into the stem. Therefore, it is possible to avoid the inconvenience that the light transmitting member falls off when the cap is press-fitted.

  In a preferred embodiment of the present invention, the surface of the base on the laser beam emission direction side is a first reference surface, and the second reference surface is positioned closer to the laser beam emission direction side than the first reference surface. A reference surface and a stepped portion formed between the first reference surface and the second reference surface are provided, and the opening end is press-fitted into the stepped portion. In this case, it is preferable that an annular groove is formed between the first reference surface and the second reference surface. The annular recess is recessed to the opposite side of the laser beam emission direction from the first reference surface. The opening end is fitted in the concave groove. According to such a configuration, the cap is press-fitted over the stepped portion and the recessed groove portion of the base. For this reason, a large contact area between the base (stem) and the cap can be secured, and the sealing performance can be improved.

  In a preferred embodiment of the present invention, the light transmitting member is attached to the plate portion via a support ring. According to such a configuration, the support ring can be mechanically firmly coupled to the cap. Therefore, the light transmission member can be appropriately fixed to the cap via the support ring.

  In a preferred embodiment of the present invention, the support ring is welded to the plate portion.

  In a preferred embodiment of the present invention, a concave portion is formed on a surface of the plate portion on the laser beam emission direction side, and the support ring is press-fitted into the concave portion.

  A method of manufacturing a semiconductor laser device according to the present invention includes a step of forming a stem having a plate-like base, a step of mounting a semiconductor laser element on the stem, a cylindrical body, and formed on one end side of the body. A step of pressing the opening end into the base so as to cover the semiconductor laser element, and a plate having an opening and a cap having an opening end formed on the other end side of the body portion; and Attaching a light transmitting member to the plate portion so as to close the opening from the outside of the cap. According to such a manufacturing method, since the light transmitting member is attached after the cap is press-fitted, there is no inconvenience that the light transmitting member falls off when the cap is press-fitted.

  In a preferred embodiment of the present invention, the step of attaching the light transmitting member is performed by covering the plate portion with a support ring to which the light transmitting member is fixed, and welding the plate portion and the support ring. .

  In a preferred embodiment of the present invention, the step of attaching the light transmitting member is performed by press-fitting a support ring to which the light transmitting member is fixed into a recess formed in the plate portion.

  Other features and advantages of the present invention will become more apparent from the detailed description given below with reference to the accompanying drawings.

1 is an overall perspective view of an example of a semiconductor laser device according to the present invention. It is sectional drawing which follows the II-II line | wire of FIG. It is sectional drawing explaining the one part process in an example of the manufacturing method of the semiconductor laser apparatus concerning this invention. It is sectional drawing explaining the one part process in an example of the manufacturing method of the semiconductor laser apparatus concerning this invention. It is sectional drawing explaining the one part process in an example of the manufacturing method of the semiconductor laser apparatus concerning this invention. It is sectional drawing explaining the one part process in an example of the manufacturing method of the semiconductor laser apparatus concerning this invention. It is sectional drawing explaining the one part process in an example of the manufacturing method of the semiconductor laser apparatus concerning this invention. It is sectional drawing similar to FIG. 2 of the other example of the semiconductor laser apparatus concerning this invention. It is sectional drawing similar to FIG. 2 of the other example of the semiconductor laser apparatus concerning this invention. It is sectional drawing explaining the one part process in the manufacturing method of the other example of the semiconductor laser apparatus concerning this invention. It is sectional drawing of an example of the conventional semiconductor laser apparatus. It is a schematic block diagram of an example in the state with which the semiconductor laser apparatus shown in FIG. 11 was equipped in the pick-up apparatus.

  Hereinafter, preferred embodiments of the present invention will be specifically described with reference to the drawings. For convenience of explanation, the upper and lower directions are specified with reference to FIG.

  1 and 2 show an example of a semiconductor laser device according to the present invention. As shown in FIG. 1, the semiconductor laser device A1 of the present embodiment includes a stem 1, a semiconductor laser element 2, a light receiving element 3, leads 4A, 4B, 4C, a cap 5, and a glass plate 8, and is disposed above. The laser beam can be emitted toward.

  The stem 1 has a base 11 and a block 12. In the present embodiment, the stem 1 has a structure in which a base 11 and a block 12 are integrally formed, and is made of, for example, Fe or an Fe alloy. As shown in FIG. 1, the base 11 has a substantially circular plate shape. The block 12 has a rectangular parallelepiped shape, and is disposed above the base 11 at a position shifted outward from the center of the base 11 in the radial direction.

  As clearly shown in FIG. 2, a first reference surface 11a and a second reference surface positioned higher than the first reference surface 11a are formed on the upper surface of the base 11 (the surface on the laser beam emission direction side). 11b and a step portion 11c formed between the reference surfaces 11a and 11b. In addition, an annular groove 11d is formed between the first reference surface 11a and the second reference surface 11b. The annular groove 11d is recessed toward the lower surface of the base 11 (opposite to the laser beam emission direction) with respect to the first reference surface 11a. ing. As understood from FIG. 2, the recessed groove portion 11 d is provided so as to be connected to the step portion 11 c. An opening end portion 53 of the cap 5 to be described later is fitted into the concave groove portion 11d. Taking an example of the dimensions of the base 11, the maximum outer diameter portion has a diameter of about 3.3 mm, and the stepped portion 11c has an outer diameter of about 2.3 mm.

  The semiconductor laser element 2 is mounted on the side surface of the block 12 via a submount 13. The semiconductor laser element 2 emits laser light and is, for example, about 250 μm square to 250 μm × 800 μm square. The submount 13 is made of, for example, a silicon substrate or AIN (aluminum nitride), and is generally about 0.8 mm × 1.0 mm square. In the present embodiment, a semiconductor laser element 2 that emits laser light such as blue or blue-violet is used, and the semiconductor laser element 2 easily causes a photochemical reaction. It is necessary to place it in the atmosphere.

  A light receiving element 3 such as a pin photodiode is provided on the upper surface (second reference surface 11 b) of the base 11. The light receiving element 3 outputs a signal having a magnitude corresponding to the intensity of received light. When light going downward from the light emitted from the semiconductor laser element 2 is received by the light receiving element 3, a signal indicating the magnitude of this light is output. From the magnitude of this signal, it is possible to perform so-called feedback control of the semiconductor laser element 2 by comparing the light intensity as a command value to the semiconductor laser element 2 with the actual light intensity.

  The leads 4A and 4B are used for supplying power to the semiconductor laser element 2 and the light receiving element 3, respectively. As shown in FIG. 2, the leads 4 </ b> A and 4 </ b> B pass through holes 11 e formed in the base 11, and protrude from the base 11 in the vertical direction. The leads 4A and 4B are made of, for example, an Fe—Ni alloy and plated with Au. This Au plating is for appropriately bonding wires after performing wire bonding described later. The leads 4A and 4B are fixed to the base 11 via an adhesive 6 such as low melting point glass. With this adhesive 6, the leads 4 </ b> A and 4 </ b> B are mechanically joined to the base 11 and are electrically insulated. Further, the hole 11 e of the base 11 is sealed with the adhesive 6.

  On the other hand, a lead 4 </ b> C is provided on the lower surface of the base 11. The lead 4C is made of, for example, an Fe—Ni alloy, and is joined to the base 11 by, for example, brazing at the upper end portion 4Ca. Thereby, the lead 4 </ b> C is electrically connected to the base 11.

  As shown in FIG. 1, the surface of the semiconductor laser element 2 is electrically connected to the upper end portion 4 </ b> Aa of the lead 4 </ b> A via a wiring pattern (not shown) on the submount 13 by the wire 7. Further, the back surface of the semiconductor laser element 2 is electrically connected to the block 12 via the submount 13, and the block 12 is electrically connected to the lead 4 </ b> C via the base 11. As a result, the semiconductor laser element 2 is electrically connected to the lead 4A and the lead 4C, and is driven to emit light using these. On the other hand, as shown in FIG. 2, the upper surface of the light receiving element 3 is connected to the upper end portion 4 </ b> Ba of the lead 4 </ b> B by the wire 7, and the lower surface is electrically connected to the lead 4 </ b> C through the base 11. As a result, the signal from the light receiving element 3 can be detected. Thus, the lead 4C is used as a so-called common lead. The lower ends of the leads 4A, 4B, and 4C are terminal portions 4Ab, 4Bb, and 4Cb, respectively, which are used to electrically and mechanically connect the semiconductor laser device A1 to an electronic device or the like. Yes.

  As shown in FIGS. 1 and 2, the cap 5 includes a cylindrical body 51, a top plate 52 connected to the upper end of the body 51, and an open end 53 formed at the lower end of the body 51. For example, made of an Fe-Ni-Co alloy such as Kovar (registered trademark). The cap 5 is press-fitted into the base 11 so as to cover the block 12 and the semiconductor laser element 2 supported by the block 12.

  An opening 52a is formed in the top plate 52, and the glass plate 8 is attached to the upper surface side (laser beam emitting direction side) of the top plate 52 so as to close the opening 52a. The glass plate 8 is transparent to the laser light emitted from the semiconductor laser element 2, and transmits the laser light emitted upward from the semiconductor laser element 2 to the outside of the semiconductor laser device A1. Is emitted. The glass plate 8 corresponds to the light transmitting member referred to in the present invention.

  In the present embodiment, the glass plate 8 is attached to the top plate 52 via the support ring 81. Specifically, the support ring 81 is a thin plate material whose outer diameter is larger than the diameter of the glass plate 8, and is made of, for example, an Fe—Ni—Co alloy such as Kovar (registered trademark). The portion of the glass plate 8 near the outer periphery overlaps the support ring 81 and is fixed to the support ring 81 with an adhesive 9 such as low melting point glass. The support ring 81 is fixed to the upper surface of the top plate 52 over the entire circumference, for example, by resistance welding. Thereby, the opening 52 a of the top plate 52 is sealed by the glass plate 8, the adhesive 9, and the support ring 81.

  As clearly shown in FIG. 2, the opening end 53 of the cap 5 is fitted into the groove 11d by being press-fitted into the step 11c of the base 11, and the tip is brought into contact with the bottom surface of the groove 11d. It touches. Thereby, the space between the base 11 and the cap 5 is sealed. In the present embodiment, for example, Sn-based plating (not shown) such as AgSn alloy plating is applied to the inner peripheral surface of the body portion 51 and the opening end portion 53 of the cap 5, and this plating is performed by press fitting. It is in a crushed state.

  Taking an example of the dimensions of the cap 5, the height (the distance from the first reference surface 11a of the base 11 to the top surface of the top plate 52) is about 2 to 2.5 mm. The inner diameter of the body part 51 or the opening end part 53 is slightly smaller than the outer diameter of the step part 11c of the base 11, and is, for example, about 2.29 mm. The thickness of the body part 51 or the opening end part 53 is about 0.15 mm.

  With the above configuration, in the semiconductor laser device A1, the laser beam from the semiconductor laser element 2 can be emitted upward through the glass plate 8, and the space partitioned by the base 11 and the cap 5 is the semiconductor laser. It is airtight with respect to the external space of apparatus A1. According to such a configuration, even when the semiconductor laser device A1 is used in a high humidity environment, it is possible to prevent the humidity around the semiconductor laser element 2 from being increased, and the semiconductor laser element 2 is protected. Suitable for doing. In order to prevent the semiconductor laser device 2 from deteriorating, an airtight space defined by the base 11 and the cap 5 is filled with an inert gas such as nitrogen gas or dry air as necessary.

  Next, an example of a manufacturing method of the semiconductor laser device A1 will be described below with reference to FIGS.

  First, as shown in FIG. 3, the stem 1 is formed. The stem 1 is formed by preparing Fe material or Fe alloy material and performing cold forging on these materials. By this cold forging, the base 11 and the block 12 are integrally formed. Further, the base 11 is formed with a step portion 11c, a concave groove portion 11d, and two holes 11e at the same time. The formation of the stem 1 is preferably performed by cold forging in terms of dimensional accuracy and manufacturing efficiency, but is not limited to this, and a method capable of forming with the same dimensional accuracy as that of cold forging may be adopted. Good.

  Next, as shown in FIG. 4, the lead 4 </ b> C is bonded to the lower surface of the base 11. The lead 4C is joined by brazing, for example. Thereby, the lead 4C and the base 11 can be made conductive. Note that the lead 4C may be joined by a method other than brazing as long as it can be electrically connected to the base 11. Next, the leads 4A and 4B are inserted into the holes 11e, respectively. In order to hold the leads 4A and 4B in a state of being inserted into the hole 11e, the hole 11e is filled with a low melting point glass paste. The low melting glass paste is, for example, a mixture of a low melting glass powder and a resin or solvent. The low melting point glass paste may be filled before the leads 4A and 4B are inserted or after the leads are inserted into the holes 11e. After the leads 4A and 4B are inserted, the low-melting glass paste is baked and solidified to become the adhesive 6. Thereby, the leads 4A and 4B are fixed to the base 11 and electrically insulated by the adhesive 6.

  After the leads 4A and 4B are fixed to the stem 1, through the steps of mounting the submount 13, the semiconductor laser element 2 and the light receiving element 3, and connecting the wire 7 by wire bonding, as shown in FIG. It will be in the state before attaching.

  Next, as shown in FIG. 6, the cap 5 is press-fitted into the stem 1. Here, prior to press-fitting of the cap 5, plating (not shown) is performed at predetermined locations on the inner peripheral surfaces of the body portion 51 and the opening end portion 53 by, for example, an electroless plating method. The cap 5 is press-fitted, for example, by placing the stem 1 on the support base 10A and regulating the lateral movement of the cap 5 by the guide body 10B to align the cap 5 and the stem 1 with a flat plate shape. The pressure body 10C is brought into contact with the entire top surface of the top plate 52 of the cap 5 and a load is applied to the stem 1 side. Then, the opening end portion 53 of the cap 5 descends while being press-fitted into the step portion 11 c of the base 11. And when the front-end | tip of the opening edge part 53 contact | abuts to the bottom face of the ditch | groove part 11d, the load press by 10 C of pressurization bodies is stopped. When press-fitting the cap 5, the glass plate 8 and the support ring 81 are not attached to the top plate 52 of the cap 5.

  Next, as shown in FIG. 7, the glass plate 8 is attached to the top plate 52 so as to close the opening 52 a from the outside of the cap 5. This attachment operation is performed by covering the top plate 52 with the support ring 81 to which the glass plate 8 is fixed, and resistance welding the top plate 52 and the support ring 81. Here, an annular protrusion 81 a is formed in advance near the outer periphery of the lower surface of the support ring 81. In the welding operation, for example, the stem 1 to the cap 5 and the support ring 81 are disposed between the lower electrode 10D and the upper electrode 10E, and the stem 1 and the support ring 81 are sandwiched and pressed by the lower electrode 10D and the upper electrode 10E. . At this time, the lower electrode 10 </ b> D is in contact with the lower surface of the base 11, and the upper electrode 10 </ b> E is in contact with the outer peripheral portion of the support ring 81.

  In the welding operation, for example, the support ring 81 is pressed while energizing the electrodes 10D and 10E. Then, current concentrates on the protrusion 81 a of the support ring 81 and melts, and the support ring 81 is joined to the top plate 52. Instead of the protrusion 81 a of the support ring 81, an annular protrusion may be provided on the top surface of the top plate 52. The semiconductor laser device A1 shown in FIGS. 1 and 2 can be manufactured through the above-described series of work steps.

  Next, the operation of the semiconductor laser device A1 will be described.

  In the semiconductor laser device A1 of this embodiment, the cap 5 is joined to the stem 1 by press fitting. That is, since the outward flange provided when the cap is welded is not required, the outer diameter of the stem 1 (base 11) can be reduced correspondingly, and the semiconductor laser device A1 can be downsized. it can.

  On the other hand, if the dimensions of each part such as the outer diameter and thickness of the cap 5 are reduced in order to reduce the size of the semiconductor laser device A1, the stress acting on the cap 5 tends to increase. On the other hand, in this embodiment, the glass plate 8 is provided outside the cap 5 and is attached after the cap 5 is press-fitted into the stem 1. For this reason, the inconvenience that the glass plate 8 falls off when the cap 5 is press-fit can be avoided. In addition, about the attachment of the glass plate 8, attaching to the outer side of the cap 5 is easier than attaching to the inner side of the cap 5, and it can also be expected that the operation of attaching the glass plate 8 to the cap 5 itself is simplified.

  The glass plate 8 is attached to the top plate 52 of the cap 5 via a support ring 81, and the support ring 81 is welded to the top plate 52. Thereby, the support ring 81 can be mechanically firmly coupled to the cap 5. Therefore, the glass plate 8 can be appropriately fixed to the cap 5 via the support ring 81.

  The opening end portion 53 of the cap 5 is fitted into the recessed groove portion 11d connected to the step portion 11c by being press-fitted into the step portion 11c of the base 11. Accordingly, the body portion 51 or the opening end portion 53 of the cap 5 is press-fitted over the long dimension of the step portion 11 c and the concave groove portion 11 d of the base 11. For this reason, a large contact area between the base 11 (stem 1) and the cap 5 can be secured, and the sealing performance by press-fitting can be improved. Furthermore, between the base 11 and the cap 5, there is a plating crushed by press fitting. This is suitable for improving the sealing performance between the base 11 and the cap 5.

  8 and 9 show another example of the semiconductor laser device according to the present invention. In these drawings, elements that are the same as or similar to those in the above embodiment are given the same reference numerals as in the above embodiment, and description thereof will be omitted as appropriate.

  In the semiconductor laser device A2 shown in FIG. 8, the base 11 in the stem 1 is not provided with the concave groove 11d, and the glass plate 8 is attached to the top plate 52 of the cap 5 without the support ring 81. The semiconductor laser device A1 is different from the semiconductor laser device A1 of the above embodiment. The glass plate 8 is fixed to the top plate 52 by a metalizing layer 9 ′ including, for example, an AuSn alloy. The semiconductor laser device A2 can be manufactured by a method substantially similar to the manufacturing method of the semiconductor laser device A1 described above. However, the step of attaching the glass plate 8 to the cap 5 is performed by, for example, applying an AuSn alloy paste on the top surface of the top plate 52, placing the glass plate 8 thereon, and firing it.

  The semiconductor laser device A3 shown in FIG. 9 is different from the semiconductor laser device A1 of the above embodiment in the mounting structure of the glass plate 8. Specifically, in the semiconductor laser device A3, the glass plate 8 is attached to the top plate 52 of the cap 5 via the support ring 81, but the support ring 81 is fixed to the top plate 52 by press-fitting. A recess 52b is formed on the top surface (surface on the laser beam emission direction side) of the top plate 52 by providing a flange on the outer peripheral portion, and a support ring 81 is press-fitted into the recess 52b. The semiconductor laser device A3 can be manufactured by a method substantially similar to the manufacturing method of the semiconductor laser device A1 described above. However, when the support ring 81 is attached to the recess 52b of the top plate 52, as shown in FIG. 10, the support ring 81 is press-fitted into the recess 52b of the top plate 52, for example, by placing the stem 1 on the support 10A. The pressure body 10F is placed in contact with the outer periphery of the support ring 81 and a load is applied to the stem 1 side. According to such a manufacturing method, since both the attachment of the cap 5 to the stem 1 and the attachment of the glass plate 8 to the cap 5 are performed by press fitting, simplification of these attachment operations can be expected.

  The semiconductor laser device according to the present invention is not limited to the above-described embodiment. The specific configuration of each part of the semiconductor laser device according to the present invention can be modified in various ways.

  The stem 1 may be configured to include, for example, Cu or Cu alloy instead of the configuration made of Fe or Fe alloy as in the above embodiment. In consideration of heat dissipation in order to suppress a temperature rise due to heat generation in the semiconductor laser element 2, it is preferable to use Cu or a Cu alloy as a constituent material of the stem 1. Similarly, in consideration of heat dissipation, the stem 1 preferably has a structure in which the base 11 and the block 12 are integrally formed. However, the structure is not limited to this, and the stem 1 may not have a structure formed integrally. Good. When the base 11 and the block 12 are formed separately, for example, the base 11 is made of Fe, the block 12 is made of Cu or a Cu alloy, and the block 12 is joined to the base 11 by brazing.

  The configuration having the light receiving element 3 is advantageous for stable light emission of the semiconductor laser element 2 by, for example, feedback control, but the present invention is not limited to this, and the output control of the semiconductor laser element 2 is realized by another method. For this reason, the light receiving element 3 may not be provided.

  The semiconductor laser device according to the present invention is suitable for use in a reading light source such as a CD, MD, DVD, or a writing light source such as a CD-R / RW or DVD-R / RW. However, the present invention is not limited to this and can be widely used as a light source for laser light mounted on electronic devices.

A1, A2, A3 Semiconductor laser device 1 Stem 2 Semiconductor laser element 3 Light receiving element 4A, 4B, 4C Lead 5 Cap 6 Resin 7 Wire 8 Glass plate (light transmission member)
9 Adhesive 10A Lower electrode (first electrode)
10B Upper electrode (second electrode)
11 Base 11a First reference surface 11b Second reference surface 11c Stepped portion 11d Recessed groove portion 11e Hole 12 Block 13 Submount 51 Body portion 52 Top plate (plate portion)
52a Opening 52b Recess 53 Opening end 81 Support ring 81a Projection

Claims (9)

A stem having a plate-like base;
A semiconductor laser element that is supported by the stem and emits laser light;
A cylindrical body, a plate formed on one end of the body, and having an opening; and an opening end formed on the other end of the body, and so as to cover the semiconductor laser element. A cap whose open end is joined to the base by press fitting;
A light transmitting member attached so as to close the opening and transmitting the laser light from the semiconductor laser element to be emitted to the outside,
The semiconductor laser device, wherein the light transmitting member is attached to the laser beam emission direction side with respect to the plate portion. A surface of the base on the laser beam emission direction side includes a first reference surface, a second reference surface located on the laser beam emission direction side of the first reference surface, the first reference surface, And a step portion formed between the second reference planes,
The semiconductor laser device according to claim 1, wherein the opening end is press-fitted into the stepped portion. Between the first reference surface and the second reference surface, an annular groove is formed which is recessed on the opposite side of the laser beam emission direction from the first reference surface,
The semiconductor laser device according to claim 2, wherein the opening end is fitted in the concave groove.   The semiconductor laser device according to claim 1, wherein the light transmitting member is attached to the plate portion via a support ring.   The semiconductor laser device according to claim 4, wherein the support ring is welded to the plate portion. A concave portion is formed on the surface of the plate portion on the emission direction side of the laser beam,
The semiconductor laser device according to claim 4, wherein the support ring is press-fitted into the recess. Forming a stem having a plate-like base;
Mounting a semiconductor laser element on the stem;
A cylindrical body part, a plate part formed on one end side of the body part and having an opening, and a cap having an opening end part formed on the other end side of the body part so as to cover the semiconductor laser element Press-fitting the open end into the base;
And a step of attaching a light transmitting member to the plate portion so as to close the opening from the outside of the cap.   8. The semiconductor laser device according to claim 7, wherein the step of attaching the light transmitting member is performed by covering the plate portion with a support ring to which the light transmitting member is fixed, and welding the plate portion and the support ring. Manufacturing method.   The method of manufacturing a semiconductor laser device according to claim 7, wherein the step of attaching the light transmitting member is performed by press-fitting a support ring to which the light transmitting member is fixed into a recess formed in the plate portion.

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