CN112825410A - Laser device - Google Patents

Laser device Download PDF

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Publication number
CN112825410A
CN112825410A CN201911134468.9A CN201911134468A CN112825410A CN 112825410 A CN112825410 A CN 112825410A CN 201911134468 A CN201911134468 A CN 201911134468A CN 112825410 A CN112825410 A CN 112825410A
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CN
China
Prior art keywords
laser
base plate
bottom plate
collimating lens
package
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Pending
Application number
CN201911134468.9A
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Chinese (zh)
Inventor
田新团
李建军
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Qingdao Hisense Laser Display Co Ltd
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Qingdao Hisense Laser Display Co Ltd
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Application filed by Qingdao Hisense Laser Display Co Ltd filed Critical Qingdao Hisense Laser Display Co Ltd
Priority to CN201911134468.9A priority Critical patent/CN112825410A/en
Publication of CN112825410A publication Critical patent/CN112825410A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4075Beam steering

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The application discloses laser belongs to the technical field of photoelectricity. The laser includes: a base plate; a pipe shell; the tube shell is arranged on the bottom plate in a surrounding mode, the plurality of laser chips and the reflecting prism are located on the bottom plate, and the reflecting prism is used for emitting light rays emitted by the laser chips in a direction far away from the bottom plate; the collimating lens structure is fixed on the tube shell and used for receiving the light rays emitted by the reflecting prism and collimating the light rays emitted by the reflecting prism; wherein, the collimating lens structure, the tube shell and the bottom plate form a closed accommodating space. The application solves the problem that the size of the laser is large. The application is used for light emission.

Description

Laser device
Technical Field
The application relates to the field of photoelectric technology, in particular to a laser.
Background
With the development of the optoelectronic technology, the laser is widely used, and the requirements for miniaturization and thinning of the laser are higher and higher.
In the related art, a laser includes a base plate, a package, a plurality of laser chips, a plurality of reflection prisms, a sealing glass layer, and a collimating lens layer. The tube shell, the plurality of laser chips and the plurality of prisms are all positioned on the bottom plate, and the tube shell is annular and surrounds the plurality of laser chips and the plurality of reflecting prisms; the plurality of laser chips correspond to the plurality of prisms one by one, each prism is positioned on the light-emitting side of the corresponding laser chip, and the reflecting prism is used for reflecting the light emitted by the corresponding laser chip; the sealing glass layer and the collimating lens layer are sequentially superposed on one side of the laser chip, which is far away from the bottom plate, along the direction far away from the bottom plate.
Since the laser includes a large number of structures, the volume of the laser in the related art is large.
Disclosure of Invention
The application provides a laser, can solve the great problem of volume of laser. The technical scheme is as follows:
the laser includes:
a base plate;
a pipe shell; the pipe shell is arranged on the bottom plate in a surrounding way,
a plurality of laser chips and a reflective prism are located on the base plate,
the reflecting prism is used for emitting the light rays emitted by the laser chip along the direction far away from the bottom plate;
the collimating lens structure is fixed on the tube shell and used for receiving the light rays emitted by the reflecting prism and collimating the light rays emitted by the reflecting prism;
the collimating lens structure, the tube shell and the bottom plate form a closed accommodating space.
The beneficial effect that technical scheme that this application provided brought includes at least:
in the laser that this application provided, seal laser instrument chip and prism in to the laser instrument through collimating lens structure, and then this laser instrument can not include sealed glass layer. Therefore, the laser comprises fewer structures and the volume of the laser is smaller.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a laser provided in an embodiment of the present application;
FIG. 2 is a schematic structural diagram of another laser provided in an embodiment of the present application;
fig. 3 is a schematic structural diagram of another laser provided in an embodiment of the present application;
fig. 4 is a schematic partial structural diagram of a laser provided in an embodiment of the present application;
FIG. 5 is a schematic diagram of a portion of another laser according to an embodiment of the present disclosure;
FIG. 6 is a schematic diagram of a target axisymmetric pattern provided by an embodiment of the present application;
FIG. 7 is a schematic diagram of a partial structure of another laser provided in an embodiment of the present application;
FIG. 8 is a schematic structural diagram of another laser provided in an embodiment of the present application;
FIG. 9 is a schematic diagram of a portion of another laser according to an embodiment of the present disclosure;
fig. 10 is a schematic structural diagram of a laser according to another embodiment of the present application;
fig. 11 is a schematic structural diagram of another laser provided in another embodiment of the present application.
Detailed Description
To make the objects, technical solutions and advantages of the present application more clear, embodiments of the present application will be described in further detail below with reference to the accompanying drawings.
With the development of the optoelectronic technology, the application of the laser is wider and wider, for example, the laser can be applied to the aspects of welding process, cutting process, laser projection, etc., and the requirements for miniaturization, thinning and light emitting efficiency of the laser are higher and higher at present. The following embodiments of the present application provide a laser, which can make the laser have high light emitting efficiency and small volume.
Fig. 1 is a schematic structural diagram of a laser provided in an embodiment of the present application, and fig. 2 is a schematic structural diagram of another laser provided in an embodiment of the present application. Fig. 1 is an exploded view of the laser shown in fig. 2, and fig. 2 is a view of a section b-b' of the laser shown in fig. 1. Referring to fig. 1 and 2, a laser 10 includes: a base plate 101, a package 102, a plurality of laser chips 103, at least one reflective prism 104, and a collimating lens structure 1071. It should be noted that fig. 1 only illustrates the positions of the cross section b-b 'in the base plate 101, the package 102, the laser chip 103, and the reflection prism 104, and the positions of the cross section b-b' in the misaligned straight lens structure 1071.
The package 102 is annular and surrounds the bottom plate 101, the plurality of laser chips 103 and the at least one reflection prism 104 are both located on the bottom plate 101, and the package 102 surrounds the plurality of laser chips 103 and the at least one reflection prism 104. The reflecting prism 104 is used to emit the light emitted from the laser chip 103 in a direction away from the base plate 101. Collimating lens structure 1071 is affixed to housing 102 and is configured to receive light exiting reflecting prism 104 and collimate light exiting reflecting prism 104. It should be noted that, collimating the light, that is, converging the light, makes the divergence angle of the light smaller, and is closer to the parallel light.
It should be noted that, in order to avoid the erosion of the laser chip, the reflecting prism, and other structures from the water and oxygen in the outside air and ensure the service life of the laser, the laser chip, the reflecting prism, and other structures need to be disposed in the sealed accommodating space. In the embodiment of the present application, the collimating lens structure 1071, the tube housing 102 and the bottom plate 101 may form the enclosed accommodating space.
To sum up, in the laser that this application embodiment provided, seal laser instrument chip and reflection prism in the laser instrument through collimating lens structure, and then this laser instrument can not include sealed glass layer. Therefore, the laser comprises fewer structures and the volume of the laser is smaller.
Alternatively, the laser chip 103 may be disposed on the base plate 101 through a heat sink, which is not labeled in fig. 1 and 2. The heat sink may be made of a material having a large thermal conductivity, and the heat sink may allow heat generated when the laser chip 103 emits light to be more rapidly dissipated.
Optionally, with continuing reference to fig. 1, a side of the collimating lens structure 1071 away from the bottom plate 101 may have at least one convex arc surface bending toward the side away from the bottom plate 101, and a portion of each convex arc surface in the collimating lens structure 1071 may be regarded as a collimating lens a, and thus the collimating lens structure 1071 may include at least one collimating lens a. The collimating lens a may be a convex lens in a plano-convex form, the collimating lens a may have a convex arc surface and a plane, the plane may be parallel to the plate surface of the bottom plate 101 and disposed near the bottom plate 101, and the convex arc surface and the plane may be two opposite surfaces. The side of the collimating lens structure 1071 facing away from the base plate 101 may have each convex curve surface as a convex curve surface in one collimating lens a.
Optionally, as shown in fig. 1, the collimating lens structure 1071 may include a plurality of collimating lenses a and a supporting member Z supporting the plurality of collimating lenses a, the collimating lenses a are located on a side of the supporting member Z far away from the bottom plate 101, the plurality of collimating lenses a may be integrally formed with the supporting member Z, and the supporting member Z may be made of a light-transmissive material. Illustratively, the collimating lens structure 1071 may be prepared by means of mold pressing.
Illustratively, each of the reflective prisms 104 corresponds to one or more of the laser chips 103, and the reflective prisms 104 are located on the light exit side of the corresponding laser chip 103. Optionally, a plurality of collimating lenses a in the collimating lens structure 1071 correspond to a plurality of laser chips 103 (i.e., all laser chips in the laser) in the laser 10 one by one, and the reflecting prism 104 is configured to reflect light emitted from the corresponding laser chip 103 to the collimating lenses a corresponding to the laser chips 103. In the laser 10 shown in fig. 1 and 2, the light emitted from each laser chip 103 may be emitted to the corresponding reflection prism 104, and then reflected on the surface of the reflection prism 104 close to the laser chip 103, and then emitted to the corresponding collimating lens a of the laser chip 103.
Alternatively, in a direction in which the collimating lens structure 1071 is away from the base plate 101, a distance between a surface of the collimating lens structure 1071 close to the base plate 101 and a surface of the laser chip 103 away from the base plate 101 may range from 1.5 mm to 5 mm. Illustratively, the distance may be 4.5 millimeters.
Alternatively, with continued reference to fig. 1 and 2, an inner region of the surface of the housing 102 remote from the base 101 is recessed relative to an outer region to which the collimating lens structure 1071 may conform. Illustratively, the edge region of the carrier Z in the collimating lens structure 1071 is conformed to this inner region.
Alternatively, referring to fig. 3, the surface of the case 102 remote from the base 101 may have at least two steps J3. Fig. 3 illustrates the surface having two steps J3. Optionally, the number of the steps J3 may be more, such as 3 or 4. For the laser shown in fig. 1 and 2, the inner region of the surface of package 102 remote from base 101 is recessed relative to the outer region, which also corresponds to the surface of package 102 remote from base 101 may have a step.
In the embodiment of the present application, the periphery of the collimating lens structure 1071 can be attached to the surface of the package 102 away from the base plate 101 by the sealing material L. Referring to fig. 3, when the surface has at least two steps, the contact area between the sealing material L and the surface is larger, so as to improve the adhesion between the sealing material L and the package 102, and further improve the sealing effect between the collimating lens structure 1071, the package 102 and the bottom plate 101. Alternatively, the sealing material may include: epoxy sealing glue, low-temperature glass solder and the like.
The material of the low-temperature glass solder includes low-temperature glass, that is, low-melting glass. Optionally, the low temperature glass has a melting temperature of less than 450 degrees, which may be 400 degrees. Alternatively, the low temperature glass may be a lead-free low melting point glass; the low-temperature glass can be D40. Optionally, the low-temperature glass may also be a lead-containing low-melting-point glass, which is not limited in the embodiments of the present application. In the present embodiment, the unit "degree" used to indicate the temperature is all referred to as "degree centigrade".
When the collimating lens structure 1071 and the tube shell 102 are soldered by using the low-temperature glass solder, the low-temperature glass powder may be first compacted in a mold having a desired shape (e.g., ring shape), and then the structure formed by the compacted low-temperature glass powder may be sintered in a low-temperature furnace to obtain the low-temperature glass solder structure having the desired shape. In the embodiment of the present application, after obtaining the ring-shaped low-temperature glass solder structure, the low-temperature glass solder structure may be placed on the surface of the package 102 away from the base plate 101 and surround the collimating lens structure 1071. Further, the package 102, the collimator lens structure 1071, and the low-temperature glass solder structure are all placed in a low-temperature furnace and sintered to melt the low-temperature glass solder structure, and then the gap between the peripheral edge of the collimator lens structure 1071 and the surface of the package 102 remote from the base plate 101 is filled. In this way, the peripheral edge of the collimating lens structure 1071 is tightly attached to the surface of the tube housing 102 away from the bottom plate 101 by the low-temperature glass solder, so that the sealing performance of the accommodating space formed by the collimating lens structure 1071, the tube housing 102 and the bottom plate 101 is ensured.
It should be noted that fig. 1 to 3 illustrate an arrangement manner of a collimating lens structure 1071 in the laser 10, by taking an example that the laser 10 includes only one collimating lens structure 1071, and the collimating lens structure 1071 includes a plurality of collimating lenses a and a carrier Z. Optionally, other arrangements of the collimating lens structure in the embodiment of the present application may also exist.
Alternatively, in another arrangement of the collimating lens structure, as shown in fig. 4, the laser 10 may include: an annular support member 1073, a carrier structure 1072, and a plurality of collimating lens structures 1071. The supporting part 1073 is fixed on the surface of the case 102 far from the bottom plate 101, the peripheral edge of the carrying structure 1072 can be fixed on the supporting part 1073, the middle area of the carrying structure 1072 has a plurality of hollowed areas K, and the plurality of collimating lens structures 1071 are covered on one-to-one correspondence of the plurality of hollowed areas K far from the bottom plate 101. The collimating lens structure 1071 is used for collimating and emitting the light emitted from the at least one laser chip 103 reflected by the reflecting prism 104.
It should be noted that fig. 4 illustrates an example in which each collimator lens structure includes one collimator lens. Optionally, fig. 5 is a schematic partial structural diagram of another laser provided in an embodiment of the present application. As shown in fig. 5, the collimator lens structure 1071 includes a plurality of collimator lenses a and a carrier Z carrying the plurality of collimator lenses a. Optionally, the hollow areas K in the carrying structure 1072 may be in a shape of a strip, and the plurality of hollow areas K in the carrying structure 1072 may be sequentially arranged along a width direction of the hollow areas K.
Alternatively, the collimator lens structure may only include a plurality of collimator lenses, and not include the bearing, and the plurality of collimator lenses may be connected to each other as an integral structure (this is not illustrated in the embodiments of the present application).
Alternatively, the plurality of laser chips 103 in the laser 10 may include a plurality of rows and a plurality of columns of laser chips 103, and each collimating lens structure may correspond to at least one row of laser chips 103. That is, each collimating lens structure 1071 may be configured to collimate light emitted from at least one row of laser chips 103 reflected by the reflecting prism 104.
Alternatively, the hollow-out region K may be rectangular, oval or in a target axisymmetric shape shown in fig. 6, the target axisymmetric shape is surrounded by two opposite straight sides and two opposite arc sides, and the target axisymmetric shape is a convex figure. The target axis symmetry shape may be a racetrack shape. Fig. 4 illustrates the hollow area K as a rectangle. For example, the length of the rectangle may be 5 mm, the width may be 3 mm, and the length and the width of the rectangle may also be other values, which is not limited in this embodiment of the application. It should be noted that the shape of the hollow area K may be designed according to the light type of the light emitted by the laser chip 103 after being reflected by the corresponding reflection prism 104, and it is only necessary to ensure that the light emitted by the laser chip 103 can be reflected by the corresponding reflection prism 104 and then can penetrate through the hollow area K.
Optionally, the shape of the collimating lens structure 1071 corresponds to the shape of the hollowed-out area K it covers. For example, the bottom surface of the collimating lens structure 1071 may have the same shape as the hollow area K covered therewith. In the embodiment of the present application, the collimating lens structure 1071 can be obtained by trimming an existing circular lens. When the bottom surface of the collimating lens structure 1071 is rectangular, it can be obtained by cutting off four edges of a circular lens; when the bottom surface of the collimating lens structure 1071 has a shape that is axisymmetric to the target, it can be obtained by cutting off opposite edges of a circular lens.
Alternatively, when the laser 10 includes a plurality of collimating lens structures 1071, each collimating lens structure 1071 may be independently disposed over the hollowed-out area K that the collimating lens structure 1071 is required to cover. Therefore, when the collimator lens structure 1071 is provided, the position of the collimator lens structure 1071 can be adjusted according to the light beam emitted from the laser chip 103 corresponding to the collimator lens structure 1071. The setting position of the collimating lens structure 1071 can be adjusted, so that the light rays emitted from the laser chip 103 at the central position pass through the vertex of the collimating lens in the collimating lens structure 1071, the collimating effect of the collimating lens structure 1071 on the light beams is better, and the parallelism of the emergent light rays is better.
In the embodiment of the present application, the curvature of the collimating lens in the collimating lens structure 1071 can be properly reduced, and then the distance between the collimating lens structure 1071 and the laser chip 103 is closer, for example, the central point of a light spot formed on a light beam emitted by the laser chip 103 and emitted to a corresponding reflection prism is located at the focal point of the collimating lens to which the light beam is emitted. It should be noted that the curvature of the collimating lens is the curvature of the convex arc surface. Alternatively, the curvature radius of the collimating lens (i.e. the curvature radius of the convex cambered surface in the collimating lens) may range from 1 mm to 4.5 mm.
Alternatively, with continued reference to fig. 4 and 5, the support member 1073 may be an annular frame (also referred to as a square frame) with a recessed inner region. Alternatively, the thickness of the support member Z may be the same at each location, e.g., the thickness may be 0.2 mm. Alternatively, the thickness may also be less than 0.15 mm, such as 0.12 mm. The support member Z may be formed by a stamping process using an annular plate-shaped structure.
In manufacturing the laser 10, each of the collimating lens structures 1071 may be welded to the carrier structure 1072 by a sealing material, and then the carrier structure 1072 to which the collimating lens structure is welded may be placed in an inner area of the recess in the support member 1073, and the carrier structure 1072 and the support member 1073 may be welded by a sealing material. Optionally, in this embodiment of the application, the carrying structure 1072 may be welded to the supporting member 1073, and then the collimating lens structure 1071 and the carrying structure 1072 may be welded.
Alternatively, when the laser 10 includes the support member 1073, the inner region of the package 102 away from the surface of the base plate 101 may not be recessed relative to the outer region. The welding of the outer region of the support member 1073 to the case may now be achieved using a parallel seal process.
The support member 1073 may have another structure. Alternatively, fig. 7 is a schematic partial structural diagram of another laser provided in an embodiment of the present application, fig. 7 only shows the support member 1073, the carrier structure 1072, and the collimating lens structure 1071 in the laser 10, and a structure formed by the support member 1073, the carrier structure 1072, and the collimating lens structure 1071 may be referred to as a collimating lens layer. Fig. 8 is a schematic structural diagram of another laser according to an embodiment of the present disclosure, where the laser shown in fig. 8 includes the collimating lens layer shown in fig. 7, and fig. 7 is an exploded structural diagram of the laser shown in fig. 8 after the collimating lens layer is turned over by 180 degrees. It should be noted that fig. 7 and 8 illustrate an example in which each collimator lens structure 1071 includes one collimator lens.
Referring to fig. 7 and 8, the supporting member 1073 is annular, the inner region q2 of the surface of the supporting member 1073 close to the bottom plate 101 is flat, the outer region q1 of the surface of the supporting member 1073 close to the bottom plate 101 is attached to the surface of the case 102 away from the bottom plate 101, and the inner region q2 is attached to the surface of the carrying structure 1072 away from the bottom plate 101. Optionally, the lateral region q1 is recessed relative to the medial region q 2. Optionally, the surface of the support member 1073 remote from the base plate 101 is planar.
Alternatively, the supporting member 1073 shown in fig. 7 may be obtained by etching an outer region on one surface of an annular plate-like structure, and the thickness of the annular plate-like structure may be the same as that of a portion of the supporting member where the inner region is located. Alternatively, the thickness of the portion of the support member 1073 where the outer region q1 is located may be less than or equal to 0.15 mm, such as 0.12 mm, and the thickness of the portion of the support member 1073 where the inner region q2 is located may range from 0.2 mm to 0.5 mm, such as 0.4 mm.
In forming the support member 1073 shown in fig. 7, the inner region q2 on the surface of the support member 1073 close to the bottom plate 101 does not need to be processed, and therefore the flatness of the inner region q2 is high. And then the laminating degree of difficulty of bearing structure 1072 and this inboard regional q2 is lower, and the laminating effect can be better, can further improve the sealed effect on collimating lens layer.
Alternatively, after the support member 1073 is manufactured, the peripheral edge of the carrying structure 1072 may be welded with the inner side region q2 in the support member 1073, then the collimating lens structure 1071 is placed on the carrying structure 1072 from the side of the support member 1073 away from the carrying structure 1072, and the collimating lens structure 1071 covers the corresponding hollowed-out region K, and then the collimating lens structure 1071 is welded with the carrying structure 1072 to obtain the collimating lens layer. The peripheral edges of the support member 1073 may then be welded to the surface of the housing 102 remote from the base plate 101.
Alternatively, the inner region q2 and the surface of the carrier 1072 away from the base plate 101 can be bonded by a sealing material, and the outer region q1 and the surface of the package 102 away from the base plate 101 can be bonded by a parallel sealing process. The sealing material may be any of the sealing materials described above.
In the embodiment of the present application, the supporting member 1073 and the carrying structure 1072 are illustrated as two separate structures, and optionally, the supporting member 1073 and the carrying structure 1072 may be integrally formed. Illustratively, a plate-like structure may be etched to obtain the integrally formed supporting member 1073 and carrying structure 1072.
Fig. 9 is a schematic diagram of a partial structure of another laser provided by an embodiment of the present application, the partial structure includes a substrate and a package of the laser, and the substrate and the package shown in fig. 2, 3 and 8 may be schematic diagrams of a section b-b' of the substrate and the package shown in fig. 9. Referring to fig. 2, fig. 3, fig. 8 and fig. 9, the laser 10 may further include: a conductive pin 108 penetrating through a sidewall of the package 102, an orthographic projection of the package 102 and the conductive pin 108 on the bottom plate 101 may be located at a peripheral edge Q2 of the bottom plate 101, and an orthographic projection of the laser chip 103 and the reflective prism on the bottom plate 101 is located in a middle area C of the bottom plate 101; the peripheral edge Q2 of base plate 101 is recessed with respect to the central region C of base plate 101 toward the side away from package 102. In the embodiment of the present application, the orthographic projections of the conductive pins 108 on the bottom plate 101 are all located outside the middle area C of the bottom plate 101.
It should be noted that the conductive pin is electrically connected to an electrode of the laser chip to transmit an external power to the laser chip, so as to excite the laser chip to emit light.
Optionally, at least one step J2 is formed at the connection between the peripheral edge Q2 of the bottom plate 101 and the middle area C of the bottom plate 101 at the side of the bottom plate 101 close to the case 102, that is, the connection has at least one step J2. At least a partial orthographic projection of conductive lead 108 on base 101 is located on step J2, e.g., an orthographic projection of one of the two ends of conductive lead 108 extending into package 102 on base 101 is located on step J2.
Optionally, laser 10 includes a plurality of conductive leads 108, the plurality of conductive leads 108 being located on opposite sides of the central region C of base 101, and the junction of the peripheral edge Q2 of base 101 and the central region C of base 101 on the side of base 101 proximate package 102 having a plurality of steps J2 located on the opposite sides. Illustratively, the opposite sides are both sides of the middle region C of the base plate 101 in the row direction in which the laser chips are arranged.
Fig. 2, 3, 8, and 9 illustrate an example in which the junction between the peripheral edge Q2 of the bottom plate 101 and the middle region C of the bottom plate 101 has only two steps J2 located on opposite sides of the middle region C.
Alternatively, the material of the bottom plate 101 may be a conductive material. For example, the material of the base plate may include copper or aluminum. The chassis 101 allows heat generated from the laser chip 103 when emitting light to be more quickly dissipated to prevent damage to the laser chip 103 by the heat.
It should be noted that, in the embodiment of the present application, the peripheral edge Q2 of the bottom plate 101 where the orthographic projection of the conductive pin 108 on the bottom plate 101 is located is recessed towards the side away from the package 102 relative to the middle area C of the bottom plate 101, so that the situation that the conductive pin 108 is contacted with the bottom plate 101 to affect the conductive performance of the conductive pin is avoided, and the normal power supply to the laser chip is ensured. In addition, the connecting part of the peripheral edge of the bottom plate and the middle area of the bottom plate is provided with steps, so that the strength of the bottom plate can be ensured on the premise of ensuring the conductivity of the conductive pins.
In the embodiment of the application, the machining process is performed on the bottom plate twice, and then the preparation of the bottom plate is completed. Three platforms with different heights are formed in the first machining process, and the heights of the three platforms are sequentially from high to low, namely a middle area of the bottom plate, a step at the joint of the peripheral edge of the bottom plate and the middle area, and the peripheral edge of the bottom plate. At this time, the thickness of the middle region of the base plate is higher than that of the prepared base plate. And after the pipe shell is welded on the bottom plate, a milling cutter is adopted to perform secondary machining on the middle area of the bottom plate so as to finish the preparation of the bottom plate. For example, after the first machining process, the height difference between the step in the bottom plate and the peripheral edge of the bottom plate may be 0.13 mm, the height difference between the middle region of the bottom plate and the step may be 0.4 mm, and the height difference between the middle region of the finished bottom plate and the step may be 0.2 mm. It should be noted that the above-mentioned height difference is only an example, alternatively, the height difference between the step in the bottom plate and the peripheral edge of the bottom plate may have other values, and the height difference between the middle area of the bottom plate and the step may also have other values, such as 0.12 mm, 0.15 mm, or 0.3 mm.
Because the pipe shell and the bottom plate can be heated in the process of welding the pipe shell on the bottom plate, the high-temperature expansion coefficients of the pipe shell and the bottom plate are different generally, and the stresses in the pipe shell and the bottom plate can be pulled mutually, so that the middle area of the bottom plate is deformed. And then, the middle area of the bottom plate is machined for the second time, so that the middle area of the bottom plate becomes relatively flat, the accuracy and the reliability of the pasting position of the laser chip and the reflecting prism in the middle area of the bottom plate are further ensured, and the light collimation degree emitted by the laser is improved. Illustratively, the flatness of the middle region of the base plate in the embodiments of the present application may be less than 0.02 mm.
In addition, because the orthographic projection of the conductive pin on the bottom plate is positioned outside the middle area of the bottom plate in the embodiment of the application, the area of the middle area of the bottom plate is smaller, the flatness of the middle area of the bottom plate can be ensured more easily, and the middle area of the bottom plate can be flatter.
It should be noted that the sidewall of the package 102 has an opening, for example, the opening may have an aperture of 1.2 mm, and the conductive pin 108 may extend through the opening into the package 102. Alternatively, the diameter of the conductive pin 108 may be 0.55 millimeters; the shell 102 may be made of kovar.
In the embodiment of the present application, when assembling the laser, a ring-shaped solder structure (e.g., a ring-shaped glass bead) may be first placed in the opening on the sidewall of the package, and the conductive pin may be inserted through the solder structure and the opening where the solder structure is located. Then, the package is placed on the periphery of the base plate, annular silver-copper solder is placed between the base plate and the package, and then the base plate, the package and the structure of the conductive pins are placed in a high-temperature furnace for sealing and sintering. Because the glass can have the same physical new energy with kovar materials at the temperature of more than 800 ℃, the glass beads and the tube shell can be integrated after being sealed, sintered and solidified, and further the airtightness of the opening on the side wall of the tube shell is realized. After the sealing and sintering, the middle area of the bottom plate is machined for the second time, so that the flatness of the middle area is improved. And finally, the collimating lens layer is attached to the surface of the tube shell far away from the bottom plate, so that the laser device is assembled.
It should be noted that the above-mentioned assembling process is only an exemplary process provided in the embodiment of the present application, the welding process adopted in each step may also be replaced by another process, and the sequence of each step may also be adapted to be adjusted, which is not limited in the embodiment of the present application.
In the above embodiments of the present invention, the base plate 101 and the case 102 are two separate structures that need to be assembled. Alternatively, base 101 and housing 102 may be integrally formed. So can avoid bottom plate and tube to produce the fold because the bottom plate that the thermal expansion coefficient of bottom plate and tube leads to is different when high temperature welding, and then can guarantee the flatness of bottom plate, guarantee laser instrument chip and reflection prism and set up the reliability on the bottom plate, and guarantee that the light that laser instrument chip sent is according to predetermined luminous angle outgoing, improve the luminous effect of laser instrument.
Fig. 10 is a schematic structural diagram of a laser provided in another embodiment of the present application, fig. 11 is a schematic structural diagram of another laser provided in another embodiment of the present application, fig. 10 is an exploded structural diagram of the laser shown in fig. 11, and fig. 11 is a schematic diagram of a section b-b' in the laser shown in fig. 10. Fig. 10 is a view showing a laser device shown in fig. 11 in which a base plate 101 and a package 102 are integrally formed. As shown in fig. 10 and 11, the laser 10 may further include a ring-shaped bracket 109 welded to the side of the package 102 remote from the base 101. Alternatively, the surface of the cartridge 102 remote from the base plate 101 may be coated with a layer of kovar material (not shown) and the bracket 109 may be welded to the surface of the kovar material remote from the base plate 101.
Alternatively, the thermal conductivity of the base plate 101 and the package 102 is large, and thus heat generated by the laser chip 103 when emitting light can be dissipated through the base plate 101 relatively quickly. Illustratively, the material of the base 101 and the envelope 102 may comprise copper, such as copper oxide or copper oxide-free.
Optionally, the rigidity of the bracket 109 is higher, so that the rigidity of the whole laser can be increased, and the risk of damage to the laser can be reduced. Illustratively, the material of the support 109 includes one or more of stainless steel and kovar. Alternatively, the thickness of the holder 109 in the axial direction of the holder 109 ranges from 0.5 mm to 1.5 mm. For example, the thickness of the support 109 may be 0.5 mm or 1 mm.
It should be noted that the structure disposed on the side of the case 102 away from the base plate 101 is made of kovar material or stainless steel, and the structure may be, for example, the support member 1073. Because kovar material and stainless steel can't be through parallel seal welding technique and copper material welding, also be when bottom plate 101 and tube 102 integrated into one piece and preparation material are copper, supporting component 1073 can't be through parallel seal welding technique lug weld on tube 102. The kovar material layer has been plated on the surface that the bottom plate 101 was kept away from to pipe shell 102 in this application embodiment, welds support 109 on the surface that the bottom plate 101 was kept away from to the kovar material layer, and the material of support 109 includes one or more in stainless steel and the kovar material, and then can adopt parallel seal welding technique to weld the surface that the bottom plate 101 was kept away from to support part 1073 at support 109, has guaranteed that support part 1073 is effectively fixed on pipe shell 102.
In the embodiment of the present application, since the base plate 101 and the case 102 are integrally formed, the process steps of welding the case 102 to the base plate 101 can be reduced, thereby simplifying the manufacturing process of the laser and reducing the manufacturing cost of the laser. And the fold of the bottom plate 101 when the pipe shell 102 is welded on the bottom plate 101 is avoided, the influence of high-temperature welding on the flatness of the bottom plate is reduced, and the flatness of the bottom plate is higher.
Fig. 10 and 11 are only for describing a case where the package 102 and the base plate 101 are integrally formed, and do not limit other structures in the laser or the positional relationship between the other structures. For example, fig. 10 and 11 exemplify that the laser 101 includes the supporting member 1073 shown in fig. 4 or 5, and optionally, the laser 101 may also include the supporting member 1073 shown in fig. 7.
In the laser provided by the embodiment of the application, the laser comprises a plurality of rows and columns of laser chips. The distance between adjacent laser chips in the first direction may be 2-4 mm, for example, 3 mm, and the first direction may be a light emitting direction of the laser chips. In a second direction perpendicular to the first direction, the distance between adjacent laser chips may be in a range of 3 to 6 mm, for example, may be 4 mm. Therefore, the laser chips in the laser device can be arranged more compactly, and the arrangement density of the laser chips is higher.
To sum up, in the laser that this application embodiment provided, seal laser instrument chip and reflection prism in the laser instrument through collimating lens structure, and then this laser instrument can not include sealed glass layer. Therefore, the laser comprises fewer structures, and the volume and thickness of the laser are smaller.
It should be noted that, the foregoing embodiments of the present application only illustrate several optional laser structures, and each component in the laser provided by the present application may be combined at will, so as to obtain lasers with different structures, and the present application does not limit the combination manner of each component. The various components refer to a base plate, a tube shell, a supporting component, a bearing structure, a collimating lens structure and the like in the laser.
The above description is only exemplary of the present application and should not be taken as limiting, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.

Claims (10)

1. A laser, characterized in that the laser comprises:
a base plate;
a pipe shell; the pipe shell is arranged on the bottom plate in a surrounding way,
a plurality of laser chips and a reflective prism are located on the base plate,
the reflecting prism is used for emitting the light rays emitted by the laser chip along the direction far away from the bottom plate;
the collimating lens structure is fixed on the tube shell and used for receiving the light rays emitted by the reflecting prism and collimating the light rays emitted by the reflecting prism;
the collimating lens structure, the tube shell and the bottom plate form a closed accommodating space.
2. The laser of claim 1, wherein the package has a ring shape, an inner region of the surface of the package facing away from the base plate is recessed relative to an outer region, and the collimating lens layer is attached to the inner region.
3. A laser according to claim 1 or 2, wherein the laser comprises a plurality of said collimating lens structures, the laser further comprising:
an annular support member fixed to a surface of the case remote from the bottom plate;
the periphery of the bearing structure is fixed on the supporting part, the middle area of the bearing structure is provided with a plurality of hollow areas, and one side of each hollow area, which is far away from the bottom plate, is covered with the collimating lens structure;
the collimating lens structure is used for collimating and emitting light rays emitted by at least one laser chip reflected by the reflecting prism.
4. The laser of claim 3, wherein the support member is planar in an inner region of the surface thereof adjacent the base plate, the outer region of the surface thereof adjacent the base plate being in abutment with the surface of the package remote from the base plate, and the inner region being in abutment with the surface of the carrier structure remote from the base plate.
5. The laser device according to claim 3 or 4, wherein the plurality of laser chips comprise a plurality of rows and a plurality of columns of the laser chips, and each of the collimating lens structures is configured to collimate light emitted from at least one row of the laser chips reflected by the reflecting prism before the light is emitted.
6. The laser according to claim 4 or 5, wherein the side of the collimating lens structure facing away from the base plate has at least one convex curved surface curved towards the side facing away from the base plate, the radius of curvature of the convex curved surface being in the range of 1 mm to 4.5 mm.
7. The laser of any one of claims 1 to 6, wherein the collimating lens layer is attached to the surface of the package remote from the base plate by a low temperature glass solder.
8. The laser of any one of claims 1 to 7, further comprising: the conductive pins penetrate through the side wall of the tube shell;
the orthographic projections of the shell and the conductive pins on the bottom plate are located on the peripheral edge of the bottom plate, and the peripheral edge of the bottom plate is sunken towards one side far away from the shell relative to the middle area of the bottom plate.
9. The laser of claim 8, wherein at least one step is formed at the junction of the peripheral edge of the base plate and the middle region of the base plate on the side of the base plate adjacent to the package, and at least a partial orthographic projection of the conductive pins on the base plate is located on the step.
10. A laser as claimed in claim 8 or 9, wherein the laser includes a plurality of said conductive pins on opposite sides of a central region of the base plate, and wherein a plurality of steps are formed at the junction of a peripheral edge of the base plate and the central region of the base plate on the opposite sides of the base plate on a side of the base plate adjacent to the package.
CN201911134468.9A 2019-11-19 2019-11-19 Laser device Pending CN112825410A (en)

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JP2011216583A (en) * 2010-03-31 2011-10-27 Sanyo Electric Co Ltd Semiconductor laser device and optical pickup device using the same
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