CN113764973A

CN113764973A - Laser and preparation method thereof

Info

Publication number: CN113764973A
Application number: CN202111057909.7A
Authority: CN
Inventors: 张昕; 田有良
Original assignee: Qingdao Hisense Laser Display Co Ltd
Current assignee: Qingdao Hisense Laser Display Co Ltd
Priority date: 2021-09-09
Filing date: 2021-09-09
Publication date: 2021-12-07

Abstract

The application discloses laser belongs to the technical field of photoelectricity. The laser includes: a base plate; an annular sidewall on the base plate; a plurality of light emitting chips located on the base plate and surrounded by the annular sidewall; the light-transmitting sealing layer is positioned on one side of the side wall far away from the bottom plate, and solder is arranged on the edge of one side, close to the bottom plate, of the light-transmitting sealing layer; the light-transmitting sealing layer is fixed with the surface of the side wall far away from the bottom plate through the solder so as to form a closed space with the side wall and the bottom plate. The application solves the problem that the preparation difficulty of the laser is large. The application is used for light emission.

Description

Laser and preparation method thereof

Technical Field

The application relates to the field of photoelectric technology, in particular to a laser and a preparation method thereof.

Background

With the development of the optoelectronic technology, the laser is widely used, and the requirement for the reliability of the laser is higher and higher.

As shown in fig. 1, in the related art, the laser 00 includes a package 001, a plurality of light emitting chips 002, an annular sealing frame 003, a light-transmitting sealing layer 004, and a collimator lens group 005. Wherein, the one side of this tube 001 has the opening, and these a plurality of luminescence chips 002 are arranged in the accommodation space of tube 001. The outer edge of the annular sealing frame 003 is fixed to the opening edge of the tube case 001 by a parallel seal technique, and the edge of the light-transmitting sealing layer 004 is fixed to the inner edge of the sealing frame 003. The collimating lens group 005 is located on the side of the sealing frame 003 away from the tube 001.

However, in the related art, the welding current and the welding speed need to be strictly controlled during parallel sealing to ensure good sealing quality, and the process difficulty of parallel sealing is high, so that the preparation difficulty of the laser is high.

Disclosure of Invention

The application provides a laser and a preparation method thereof, which can solve the problem that the preparation difficulty of the laser is high. The technical scheme is as follows:

in one aspect, a laser is provided, the laser comprising:

a base plate;

an annular sidewall on the base plate;

a plurality of light emitting chips on the base plate and surrounded by the annular sidewall;

the light-transmitting sealing layer is positioned on one side of the side wall, which is far away from the bottom plate;

the edge of one surface, close to the bottom plate, of the light-transmitting sealing layer is provided with solder; the light-transmitting sealing layer is fixed with the surface of the side wall far away from the bottom plate through the solder so as to form a closed space with the bottom plate and the side wall in a surrounding mode.

In another aspect, a method for manufacturing a laser is provided, the method including:

providing a bottom plate, an annular side wall, a plurality of light-emitting chips and a light-transmitting sealing layer, wherein solder is arranged at the edge of one surface of the light-transmitting sealing layer;

welding an annular surface in the sidewall to the bottom plate;

attaching the plurality of light emitting chips to an area surrounded by the side wall on the bottom plate;

arranging the light-transmitting sealing layer on one side of the side wall far away from the bottom plate, wherein the solder is in contact with the surface of the side wall far away from the bottom plate;

heating the light-transmitting sealing layer to melt the solder on the light-transmitting sealing layer;

and solidifying the solder to obtain the laser.

The beneficial effect that technical scheme that this application provided brought includes at least:

in the laser that this application provided, the printing opacity sealing layer is fixed with the lateral wall through the solder that sets up on it. Compared with parallel sealing welding, the controllability is higher and the difficulty of the welding process is lower in welding by the solder, so that higher welding quality can be ensured, and the difficulty in manufacturing the laser can be reduced. And the welding quality of welding through the welding flux is higher, so that the sealing performance of a closed space surrounded by the light-transmitting sealing layer, the bottom plate and the side wall can be better ensured, the risk that the light-emitting chip in the closed space is corroded by water oxygen can be further reduced, and the reliability of the laser is improved.

In addition, the light-transmitting sealing layer is directly fixed with the side wall to form a closed space with the bottom plate and the side wall in an enclosing mode, so that a sealing frame does not need to be arranged in the laser, the preparation procedures of the laser can be reduced, and the preparation difficulty of the laser is further reduced. And parts in the laser are reduced, which is beneficial to the miniaturization of the laser.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

Fig. 1 is a schematic structural diagram of a laser provided in the related art;

fig. 2 is a schematic structural diagram of a laser provided in an embodiment of the present application;

FIG. 3 is a schematic structural diagram of another laser provided in an embodiment of the present application;

fig. 4 is a schematic structural diagram of another laser provided in an embodiment of the present application;

fig. 5 is a flowchart of a method for manufacturing a laser according to an embodiment of the present disclosure.

Detailed Description

To make the objects, technical solutions and advantages of the present application more clear, embodiments of the present application will be described in further detail below with reference to the accompanying drawings.

With the development of the photoelectric technology, the application of the laser is wider and wider, and the requirements on the preparation difficulty, reliability and miniaturization of the laser are higher and higher. The following embodiments of the present application provide a laser, which can reduce the difficulty in manufacturing the laser, improve the reliability of the laser, and reduce the volume of the laser.

Fig. 2 is a schematic structural diagram of a laser provided in an embodiment of the present application, fig. 3 is a schematic structural diagram of another laser provided in an embodiment of the present application, fig. 3 may be an exploded view of the laser of fig. 2, and fig. 2 may be a schematic diagram of a section b-b' of the laser shown in fig. 3. As shown in fig. 2 and 3, the laser 10 may include a base 1011, a ring-shaped sidewall 1012, a plurality of light emitting chips 102, and a light transmissive sealing layer 103.

The sidewall 1012 and the light emitting chips 102 are disposed on the bottom plate 1011, and the sidewall 1012 surrounds the light emitting chips 102. The structure formed by the bottom plate 1011 and the side wall 1012 can be referred to as a tube shell 101, the bottom plate 1011 and the side wall 1012 enclose a containing space of the tube shell 101, and the tube shell 101 has an opening. The light transmissive encapsulant 103 is located on a side of the sidewall 1012 remote from the base 1011. Alternatively, bottom 1011 and side walls 1012 in case 101 may be of unitary construction, or may be of separate construction, welded together to form case 101.

The surface of the side wall 1012 remote from the base plate 1011 is an annular surface. The edge of one surface of the light-transmitting sealing layer 103 may be provided with solder H, and the region where the solder H is provided may be an annular region. Note that the solder H in the light-transmitting sealing layer 103 is located on the side close to the base plate 1011, and for convenience of illustration, the solder H is indicated on the side of the light-transmitting sealing layer 103 away from the base plate 1011 in fig. 3. The light-transmitting sealing layer 103 may be fixed to the surface of the side wall 1012 away from the bottom plate 1011 by the solder H, the light-transmitting sealing layer 103 is used to seal the opening of the package 101, and the bottom plate 1011, the side wall 1012, and the light-transmitting sealing layer 103 may enclose a closed space. The light emitting chip 102 can be located in the closed space, so as to avoid the corrosion of external water and oxygen and ensure the reliability of the light emitting chip. It should be noted that when the light-transmitting sealing layer is provided by a supplier, the light-transmitting sealing layer may be provided with solder, that is, the light-transmitting sealing layer is provided with solder in advance. Optionally, when the laser is prepared, solder can be plated on the light-transmitting sealing layer.

In the embodiment of the present application, the shape of the light transmissive sealing layer 103 and the shape of the sidewall 1012 may be matched. Such as the shape and size of the outer edge of the light transmissive sealing layer 103, is the same or substantially the same as the shape and size of the outer ring of the sidewall 1012; the solder H on the light-transmitting sealing layer 103 is annular. This ensures that the solder on the edge of the light-transmissive sealing layer 103 can be precisely applied to the annular surface of the side wall 1012 remote from the base 1011. Referring to fig. 2 and fig. 3, in the embodiment of the present application, the sidewall 1012 is a square tube structure, and the light-transmissive sealing layer 103 is a rectangular plate structure. Optionally, the side wall may also be a circular tubular structure, and the corresponding light-transmitting sealing layer may be a circular plate-shaped structure; the side wall is of a pentagonal tubular structure, and the corresponding light-transmitting sealing layer can be of a pentagonal plate-shaped structure; the side wall may also be a tubular structure with other shapes, and the embodiment of the present application is not limited.

When the laser 10 is manufactured, the bottom plate 1011 and the side wall 1012 may be welded, and then the light emitting chip 102 may be attached to the bottom plate 1011. The light-transmitting sealant 103 provided with the solder H may be then disposed on the side of the side wall 1012 away from the bottom plate 1011, and the solder H is brought into contact with the surface of the side wall 1012 away from the bottom plate 1011. Then, the edge of the light-transmitting sealing layer 103 is heated to melt the solder, and the solder H is solidified, thereby obtaining the assembled laser 10. Alternatively, after the bottom plate 1011 and the side wall 1012 are welded, the edge of the light-transmitting sealing layer 103 may be heated to melt the solder H provided on the light-transmitting sealing layer 103. Next, the light-transmitting sealant 103 to which the melted solder H is attached is provided on the side of the side wall 1012 away from the bottom plate 1011, and the solder H is brought into contact with the surface of the side wall 1012 away from the bottom plate 1011. Finally, the solder H is cured to obtain the assembled laser 10.

It should be noted that the light emitting chip in the laser may be a semiconductor chip, and the semiconductor chip has high sensitivity to moisture, harmful gas and pollutants in the environment and is easily damaged. If particles such as dust, water vapor or ionic pollutants enter the laser, the particles adhere to the surface of the light-emitting chip to cause short circuit or open circuit of the light-emitting chip, and finally the light-emitting chip fails. Therefore, the light emitting chip needs to be hermetically packaged to isolate the light emitting chip from the environment, ensure the cleanness of the light emitting chip, and prevent the light emitting chip from being damaged by external substances. The packaging of the light-emitting chip also plays a role in improving the mechanical strength and the optical performance of the laser.

In the related art, a component for sealing the opening of the package in the laser is a cap assembly. As shown in fig. 1, the upper cover assembly includes a metal sealing frame 003 and a light-transmitting sealing layer 004, and the sealing frame 003 and the light-transmitting sealing layer 004 are integrated by glass cement bonding. The glass cement and the sealing frame 003 have certain stress, and the glass cement generates bubbles in the process of low-temperature sintering. The glass cement risks air leakage during the impact test after the laser preparation is completed.

In the related art, the upper cover assembly and the tube shell are fixed by parallel sealing (or also called parallel seam welding). Parallel sealing is a key sealing process for the airtight packaging of microelectronic monolithic integrated circuits and hybrid circuits, wherein the quality of sealing has a great influence on the sealing quality and reliability of parallel sealing products. In the parallel sealing process, sealing equipment is adopted to roll on the surfaces of two objects to be sealed which are arranged in a superposition mode so as to apply heat to the surfaces of the objects to be sealed, the contact surfaces of the objects to be sealed are made to melt under the action of the heat, and then the two objects to be sealed are combined. In the related art, the outer edge of the sealing frame is overlapped on the side wall of the tube shell, and the sealing and welding equipment rolls on the outer edge of the sealing frame so as to fix the sealing frame and the tube shell.

The technological parameters of parallel seal welding mainly include welding current and welding speed. The greater the welding current, the greater the amount of heat generated by the sealing apparatus. The slower the welding speed, the more heat the object to be sealed receives. If the welding current is too low, a welding spot cannot be formed on the object to be sealed, which may affect the airtightness of the tube shell. If the welding current is too large, the sealing frame is subjected to too much thermal shock, and the sealing frame may be burned out. If the welding speed is too low, the total welding time is prolonged, the welding heat is large, the temperature of the sealing frame and the tube shell is increased, and the sealing track is not flat. If the welding speed is too high, the welding may be discontinuous, and there is a possibility that a leak may occur at the welded portion between the upper cap assembly and the case. Therefore, in the related art, the control of parallel sealing welding is difficult, and the preparation difficulty of the laser is high; the effect of sealing the upper cover component and the tube by adopting a parallel seal welding technology is poor, so that the reliability of the laser is low.

In the embodiment of the application, the laser is not provided with the sealing frame, and the sealed euphotic layer and the tube shell are directly fixed through the welding flux arranged on the sealed euphotic layer. Therefore, the sealing frame and the light-transmitting sealing layer do not need to be fixed by glass cement, and the phenomenon that air leaks from the glass cement position due to bubble breakage caused by the glass cement is avoided. And because the parts in the laser are reduced, the volume of the laser can be reduced, and the miniaturization and the thinning of the laser are facilitated. In the embodiment of the application, the mode of welding through the solder replaces parallel sealing welding to fix the sealed light-transmitting layer and the tube shell. Compared with a parallel sealing welding mode, the operation of a mode of welding by heating the welding flux is simpler, complex welding parameters do not need to be considered, the technological process of sealing the laser can be simplified, and the preparation process of the laser is simplified. In addition, the sealing reliability of the mode of welding by the solder is high, the sealing effect of the laser can be improved, and the reliability of the laser can be improved.

In summary, in the laser provided in the embodiment of the present application, the light-transmitting sealing layer is fixed to the side wall by the solder disposed thereon. Compared with parallel sealing welding, the controllability is higher and the difficulty of the welding process is lower in welding by the solder, so that higher welding quality can be ensured, and the difficulty in manufacturing the laser can be reduced. And the welding quality of welding through the welding flux is higher, so that the sealing performance of a closed space surrounded by the light-transmitting sealing layer, the bottom plate and the side wall can be better ensured, the risk that the light-emitting chip in the closed space is corroded by water oxygen can be further reduced, and the reliability of the laser is improved.

Optionally, the material of package 101 in the embodiment of the present application may be copper, such as oxygen-free copper. It should be noted that the light emitting chip 102 generates much heat when emitting laser, and the thermal conductivity of copper is large. The material of tube 101 in this application embodiment is copper, so can guarantee that the luminous chip 102 that sets up on the bottom plate 1011 of tube 101 can conduct through tube 101 fast at the heat that the during operation produced, and then gives off relatively fast, avoids the heat gathering to luminous chip's damage. Optionally, package 101 may be made of one or more of aluminum, aluminum nitride, and silicon carbide.

In the embodiment of the present application, the solder disposed on the edge of the light-transmitting sealing layer 103 may include gold and tin. If the solder can be gold-tin solder, the gold content of the gold-tin solder can account for eighty percent, and the tin content can account for twenty percent. The gold-tin solder has high corrosion resistance, high creep resistance and good heat conduction and electric conductivity. For example, the heat conduction coefficient of the gold-tin solder can reach 57W/m.K. Therefore, the object welded by the gold-tin solder has high welding strength, the controllability of the welding process by the gold-tin solder is superior to that of the parallel sealing welding process, and the yield of the welding by the gold-tin solder is high.

Alternatively, the solder may include a platinum layer and a gold-tin alloy layer which are sequentially superimposed on the edge of the light-transmissive sealing layer 103 in a direction away from the light-transmissive sealing layer 103. It should be noted that, because gold is difficult to directly adhere to the light-transmitting sealing layer, a thin platinum layer may be first disposed on the light-transmitting sealing layer, and then a gold-tin alloy layer is plated on the platinum layer, so as to ensure the adhesion firmness of the gold-tin alloy layer. Alternatively, the thickness of the platinum layer may range from 0.2 mm to 0.3 mm, e.g., the platinum layer may have a thickness of 0.25 μm. The thickness of the layer of gold-tin alloy platinum is in the range of 2 microns to 3 microns, such as 2.5 microns.

The platinum layer and the gold-tin alloy layer in the solder are both annular, and the shapes and the sizes of the platinum layer and the gold-tin alloy layer can be the same. Illustratively, the width of the solder ranges from 1 mm to 1.5 mm, i.e., the width of the solder is greater than or equal to 1 mm and less than or equal to 1.5 mm. The width of the platinum layer and the gold-tin alloy layer in the solder can also be in the range of 1 mm-1.5 mm. The solder is annular, and the width of the solder is the annular width. Optionally, the width of each position of the solder is the same; or the widths of different positions of the solder may be different, and the widths of the positions may still be within the above-mentioned width range of the solder.

In the case of soldering two objects with a solder, the greater the area of contact between the two objects with the solder, the higher the solder fixation of the two objects. In the embodiment of the present application, the light-transmitting sealing layer 103 and the sidewall 1012 are fixed by the annular solder on the edge of the light-transmitting sealing layer 103. Since the solder on the light-transmitting sealing layer 103 is set in advance, the larger the contact area between the solder and the side wall 1012, the better the fixing effect between the light-transmitting sealing layer 103 and the side wall 1012. Illustratively, the width of the annular surface of the side wall 1012 remote from the bottom plate 1011 may be greater than the width of the solder in the light transmissive sealing layer 103 to ensure that the solder may fully contact the side wall when the light transmissive sealing layer 103 is disposed on the surface of the side wall 1012 remote from the bottom plate 1011. If the width of each position of the side wall is the same, the width of the side wall may be greater than 1 mm, that is, the width of the annular surface of the side wall far from the bottom plate 1011 is greater than 1 mm.

In the embodiment of the present application, the edge of the light-transmissive sealing layer 103 is directly fixed to the annular surface of the sidewall 1012 to perform sealing. In order to ensure the sealing effect, it is necessary to ensure that the flatness of the edge of the light-transmitting sealing layer 103 and the annular surface of the side wall 1012 away from the bottom plate 1011 are both high, so as to avoid the situation that the sealing fails due to the concave-convex defect of the light-transmitting sealing layer 103 or the annular surface of the side wall 1012. For example, the flatness of the annular surface of the sidewall 1012 away from the base 1011 may be greater than or equal to 0.2 mm, i.e., the distance between the most concave point and the most convex point in the surface in a direction perpendicular to the surface is less than 0.2 mm.

Optionally, a gold layer may be provided on the annular surface of the side wall 1012 remote from the base 1011. Such as the annular surface may be pre-plated with a gold layer. Because most of the gold in the gold-tin solder is gold, after the light-transmitting sealing layer 103 is heated, the gold-tin solder in the light-transmitting sealing layer 103 can be mutually dissolved with the gold layer on the side wall 1012 to be better integrated, and further, the welding firmness of the light-transmitting sealing layer 103 and the annular surface of the side wall 1012 far away from the bottom plate 1011 can be further improved. The gold-tin solder has good wettability and has no etching phenomenon on the gold plating layer. Because the gold-tin alloy and the gold-plating layer have close components, the gold-tin alloy has low leaching degree on the very thin gold-plating layer through diffusion and basically has no migration phenomenon of internal molecules, thereby avoiding the influence of welding a light-transmitting sealing layer on the original characteristics of the side wall.

In the embodiment of the present application, the light-transmitting sealing layer 103 is rectangular plate-shaped. The light transmissive sealing layer 103 may include two opposite large surfaces, which may be opposite the base plate 1011, and a plurality of smaller sides connecting the two surfaces. The thickness of each position in the light-transmissive sealing layer 103 may be the same or substantially the same. Illustratively, the length of the light-transmissive sealing layer 103 ranges from 17.05 mm to 17.35 mm, the width of the light-transmissive sealing layer 103 ranges from 11.15 mm to 11.45 mm, and the thickness of the light-transmissive sealing layer 103 ranges from 0.65 mm to 0.75 mm.

In the embodiment of the present application, the opening of the package 101 is only sealed by the light-transmitting sealing layer 103, and the light-transmitting sealing layer 103 may further need to have sufficient hardness and strength to protect components in the accommodating space of the package 101 on the premise of sealing the opening. Since the laser light emitted from the light-emitting chip 102 in the package 101 needs to be emitted through the light-transmitting sealing layer 103, the light transmittance of the light-transmitting sealing layer 103 needs to be high. The light-transmissive sealing layer 103 may have a mohs hardness of 9 or more, and/or a light transmittance of 85% or more. For example, the material of the light transmissive sealing layer 103 may be sapphire. The Mohs hardness of the sapphire is as high as 9.0, the light transmittance is more than eighty-five percent, and the sapphire has higher transmittance for visible light and infrared band light.

The Laser 10 in the embodiment of the present application may be a multi-chip Laser Diode (MCL) type Laser. With continued reference to fig. 2 and 3, the plurality of light emitting chips 102 in the laser 10 may be arranged in a plurality of rows and a plurality of columns, and fig. 3 illustrates an example where the laser 10 includes 20 light emitting chips 102 arranged in four rows and five columns, where the row direction is the y direction and the column direction is the x direction. The number and arrangement of the light emitting chips 102 in the laser 10 may also be adapted. For example, the laser 10 may also include 28 light emitting chips 102 arranged in four rows and seven columns, 14 light emitting chips 102 arranged in two rows and seven columns, or 25 light emitting chips 102 arranged in five rows and five columns, which is not limited in the embodiment of the present application.

With continued reference to fig. 2 and 3, the laser 10 may also include a plurality of heat sinks 104 and a plurality of reflective prisms 105. The plurality of heat sinks 104 correspond to the plurality of light emitting chips 102 one to one, and the plurality of reflection prisms 105 also correspond to the plurality of light emitting chips 102 one to one. The heat sink 104 and the reflection prism 105 are fixed on the bottom plate 1011, each light emitting chip 102 is fixed on the corresponding heat sink 104, and each reflection prism 105 is located on the light emitting side of the corresponding light emitting chip 102. The light emitting chips 102 are configured to emit laser light to the corresponding reflecting prisms 105, and the reflecting prisms 105 are configured to reflect the incident laser light in a direction away from the bottom plate 1011 (e.g., a z direction in fig. 2), so that the laser light is emitted to the light transmissive sealing layer 103. Illustratively, a surface F of the reflection prism 105 opposite to the light emitting chip 102 is a light reflecting surface for reflecting the incident laser light to realize a reflection function of the reflection prism 105 on the laser light. Alternatively, the surface of the reflection prism 105 opposite to the light emitting chip 102 may be plated with a reflection film to form the light reflection surface.

An included angle between the light emitting surface F of the reflecting prism 105 and the surface of the bottom plate 1011 may be an acute angle, so as to ensure that the laser emitted by the light emitting chip 102 is reflected in a direction away from the bottom plate 1011. For example, the angle between the reflective surface F and the surface of the bottom plate 1011 may be 45 degrees. Alternatively, as shown in fig. 2 and 3, the side surfaces of the reflection prism 105 may have a right-angled trapezoid shape. Alternatively, the side surface of the reflection prism 105 may also be in a right triangle shape, or an acute triangle shape, or other shapes, which is not limited in the embodiments of the present application.

With continued reference to fig. 2 and 3, the laser 10 may further include a set of collimating mirrors 106. The collimating lens group 106 is located on the side of the light-transmissive sealing layer 103 far from the bottom plate 1011. The collimating mirror group 106 may include a plurality of collimating lenses T in one-to-one correspondence with the plurality of light emitting chips 102 in the laser 10. Each light emitting chip 102 may emit laser light to the reflective surface F of the corresponding reflective prism 105, the reflective surface F of the reflective prism 105 reflects the incident laser light to the light transmissive sealing layer 103, and the laser light may be directed to the collimating lens T corresponding to the light emitting chip 102 after transmitting through the light transmissive sealing layer 103. The collimating lens T may collimate the incident laser light and then emit the collimated laser light, thereby realizing light emission of the laser 10. The plurality of collimating lenses in the collimating lens group 106 can be integrally formed. The side of the collimating lens group 106 away from the bottom plate 1011 may have a plurality of convex curved surfaces curving towards the side away from the bottom plate 1011. The portion of the collimating lens group 106 where each convex arc surface is located can be regarded as a collimating lens T, and further can be regarded as the collimating lens group 106 including a plurality of collimating lenses T.

Alternatively, the structure of the reflection prism 105 may be modified so that the reflection prism 105 collimates the incident laser light and reflects the laser light. Illustratively, fig. 4 is a schematic structural diagram of another laser provided in an embodiment of the present application. As shown in fig. 4, the light reflecting surface F of the reflecting prism 105 corresponding to each light emitting chip 102 is a concave arc surface. The light emitting chip 102 emits the laser to the concave arc surface, and the concave arc surface can adjust the divergence angle of the emitted laser so as to collimate the emitted laser and then reflect the collimated laser in the direction away from the bottom plate 1011. The laser light can be emitted toward the light-transmitting sealing layer 103, and can be emitted after passing through the light-transmitting sealing layer 103, thereby realizing light emission of the laser 10. In this alternative, the laser 10 may not include the collimating lens group, so that the number of components in the laser 10 can be reduced, which is beneficial to the simplification and miniaturization of the manufacturing process of the laser 10.

In the related art, a collimating lens group in a laser includes a plurality of collimating lenses, and each light emitting chip corresponds to one collimating lens. When the collimating lens group is arranged, the collimating lens group and the light emitting chips are generally coupled by taking the center or the edge as a reference point, so as to ensure that the laser emitted by each light emitting chip is accurately emitted to the corresponding collimating lens as far as possible, the coupling procedure is complex, and the operation precision and the operation time of the process are greatly restricted. Since the relative position relationship of each collimating lens in the collimating lens group is usually fixed, when the collimating lens group is coupled, the collimating lenses need to be integrally coupled for all the light emitting chips. If the light emitting chips have mounting errors, the mounting positions of the light emitting chips deviate from the theoretical positions, and the deviation directions of different light emitting chips are different, the laser emitted by more light emitting chips cannot be accurately emitted to the corresponding collimating lenses. Therefore, the collimating lens group has low coupling accuracy, and the collimating effect on the laser is poor.

In the embodiment of the present application, for the laser device shown in fig. 4, the reflection prism corresponding to each light emitting chip can directly collimate laser, and the reflection prism can realize the function of a collimating lens group. So can no longer set up the collimation mirror group and carry out the collimation of laser, the part in the laser instrument can carry out certain reduction, and the thickness of laser instrument can attenuate, and the volume of laser instrument can reduce. In addition, the coupling process of the collimating lens group can be omitted, and the preparation difficulty of the laser is reduced. Moreover, the corresponding reflecting prisms can be respectively and independently arranged for each light-emitting chip, the corresponding position relation between the reflecting prisms and the light-emitting chips can be set more accurately, the collimation effect of the laser emitted by other light-emitting chips due to the mounting error of the light-emitting chips is avoided, and the high collimation degree of the laser emitted by the laser is ensured.

With continued reference to fig. 3, the side wall 1012 of package 101 may have a plurality of openings on opposite sides thereof, and laser 10 may further include: conductive pins (not shown) can extend into package 101 through the openings in the sidewalls, and are fixed to package 101. The conductive pins can be electrically connected with the electrodes of the light-emitting chip so as to transmit an external power supply to the light-emitting chip, and further excite the light-emitting chip to emit laser.

Fig. 5 is a flowchart of a method for manufacturing a laser according to an embodiment of the present disclosure, which may be used to manufacture the laser of fig. 2, 3, or 4. As shown in fig. 5, the method may include:

step 501, providing a bottom plate, an annular side wall, a plurality of light emitting chips and a light-transmitting sealing layer, wherein solder is arranged on the edge of one surface of the light-transmitting sealing layer.

Illustratively, the supplier of the individual components may directly provide the base plate, the annular side wall, the plurality of light emitting chips, and the light transmissive sealing layer. The supplier directly provides the light-transmitting sealing layer with solder in advance, namely the edge of one side of the light-transmitting sealing layer is provided with solder, for example, the solder is gold-tin solder. Alternatively, the supplier directly provides the sidewalls with a gold layer on the annular surface. Each of the provided light emitting chips may be disposed on a corresponding heat sink, and an assembly of each light emitting chip and the corresponding heat sink is referred to as a chip assembly in this embodiment of the application. Optionally, a plurality of reflection prisms, a plurality of collimating mirror groups, and a plurality of conductive pins may also be provided in step 501.

Step 502, welding the annular surface of the sidewall to the base plate.

The side wall has two annular surfaces. Optionally, gold layers may be disposed on both annular surfaces, and either annular surface may be soldered to the base plate. Or only one of the two annular surfaces may be provided with a gold layer, the other annular surface than the one may be soldered to the base plate.

For example, a ring-shaped silver-copper solder may be placed on the bottom plate, then the ring-shaped side wall may be placed on the bottom plate, and the ring-shaped bottom surface of the side wall may be covered with the silver-copper solder, and then the bottom plate bearing the side wall may be placed in a high temperature furnace to be hermetically sintered, so that the bottom plate and the side wall may be welded into a whole. Optionally, the sidewall provided in step 501 may have a plurality of openings for disposing conductive pins. Step 502 may also place a ring-shaped solder structure (e.g., a ring-shaped glass bead) in the opening on the sidewall, and pass a conductive pin through the solder structure and the opening where the solder structure is located. And then, the side wall inserted with the conductive pin and the bottom plate are sealed and sintered together.

Step 503, attaching the plurality of light emitting chips to the region surrounded by the side wall on the bottom plate.

For example, after the bottom plate and the side walls are welded, the provided chip assemblies and the reflecting prisms may be attached to the bottom plate in the area surrounded by the side walls, and each reflecting prism is located at the light emitting side of the corresponding light emitting chip, so as to obtain an assembly structure of the bottom plate, the side walls, the chip assemblies and the reflecting prisms. Optionally, after the chip assembly is mounted, wire bonding may be performed to connect the conductive pins and the electrodes of the light emitting chip by gold wires.

And step 504, arranging the light-transmitting sealing layer on one side of the side wall far away from the bottom plate, and enabling the solder to be in contact with the surface of the side wall far away from the bottom plate.

For example, the light-transmitting sealing layer provided with the solder may be first disposed on a side of the side wall away from the bottom plate, the side wall is faced to the side wall, the annular solder is aligned with the annular surface of the side wall, and then the light-transmitting sealing layer is pressed down to contact the solder with the surface of the side wall away from the bottom plate.

Step 505, the light-transmitting sealing layer is heated to melt the solder on the light-transmitting sealing layer.

For example, the light transmissive sealing layer may be heated by a gas heating device, such as heating only the edge of the light transmissive sealing layer until the solder on the light transmissive sealing layer is melted. In the process, the gold layer on the upper surface of the side wall can be melted, and then the melted solder and the melted gold layer can be integrated, so that the light-transmitting sealing layer and the side wall are welded. Such as by controlling the length of heating time to control the extent of melting of the solder.

Optionally, after step 503, the solder on the light-transmitting sealing layer may be melted, and then the light-transmitting sealing layer is attached to the side of the sidewall away from the bottom plate, and the solder is in contact with the surface of the sidewall away from the bottom plate, so as to solder the light-transmitting sealing layer and the sidewall through the solder.

And step 506, solidifying the welding material to obtain the laser.

For example, the melted solder may be cooled to solidify the solder, so as to achieve the sealing and fixing of the light-transmitting sealing layer and the side wall. Optionally, after the solder is cured, the collimating lens group may be coupled with the light emitting chip to determine a setting position of the collimating lens group, and then the collimating lens group is fixed to a side of the light-transmitting sealing layer away from the bottom plate.

It should be noted that the above preparation process is only an exemplary process provided in the embodiment of the present application, and the welding process adopted in each step may also be replaced by other processes, and the sequence of each step may also be adapted to be adjusted, which is not limited in the embodiment of the present application.

In summary, in the preparation method provided by the embodiment of the present application, the light-transmitting sealing layer is fixed to the sidewall by the solder disposed thereon. Compared with parallel sealing welding, the controllability is higher and the difficulty of the welding process is lower in welding by the solder, so that higher welding quality can be ensured, and the difficulty in manufacturing the laser can be reduced. And the welding quality of welding through the welding flux is higher, so that the sealing performance of a closed space surrounded by the light-transmitting sealing layer, the bottom plate and the side wall can be better ensured, the risk that the light-emitting chip in the closed space is corroded by water oxygen can be further reduced, and the reliability of the laser is improved.

It should be noted that in the embodiments of the present application, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. The term "plurality" means two or more unless expressly limited otherwise. "substantially" and "substantially" mean within an acceptable error range, one skilled in the art can solve the technical problem and achieve the technical effect within a certain error range. In the drawings, the size of layers and regions may be exaggerated for clarity of illustration. Also, it will be understood that when an element or layer is referred to as being "on" another element or layer, it can be directly on the other element or layer or intervening layers may also be present. Like reference numerals refer to like elements throughout. The term "and/or" is merely an associative relationship that describes an associated object, meaning that three relationships may exist, e.g., a and/or B, may mean: a exists alone, A and B exist simultaneously, and B exists alone.

The embodiments of the laser and the embodiments of the method for manufacturing the laser in the present application can be referred to each other. The above description is only exemplary of the present application and should not be taken as limiting, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.

Claims

1. A laser, characterized in that the laser comprises:

a base plate;

an annular sidewall on the base plate;

2. The laser of claim 1, wherein the solder material comprises gold and tin.

3. The laser of claim 2, wherein the solder comprises a platinum layer and a gold-tin alloy layer sequentially superimposed on an edge of the light-transmissive sealing layer in a direction away from the light-transmissive sealing layer.

4. The laser according to claim 3, wherein the platinum layer has a thickness in the range of 0.2 to 0.3 microns and the gold-tin alloy layer has a thickness in the range of 2 to 3 microns.

5. The laser of any one of claims 1 to 4, wherein the solder is ring-shaped, and the width of the solder is in a range of 1 mm to 1.5 mm.

6. The laser of any of claims 1 to 4, wherein the width of the side wall is greater than 1 mm.

7. The laser of any one of claims 1 to 4, wherein the surface of the side wall facing away from the base plate has a flatness of greater than or equal to 0.2 mm.

8. A laser as claimed in any one of claims 2 to 4, wherein the surface of the side wall remote from the base is provided with a gold layer.

9. The laser according to any one of claims 1 to 4, wherein the light-transmissive sealing layer has a Mohs hardness of 9 or more and/or a light transmittance of 85 or more.

10. A method of fabricating a laser, the method comprising:

welding an annular surface in the sidewall to the bottom plate;

and solidifying the solder to obtain the laser.