CN112909729A

CN112909729A - Laser device

Info

Publication number: CN112909729A
Application number: CN201911135420.XA
Authority: CN
Inventors: 李建军; 田新团
Original assignee: Qingdao Hisense Laser Display Co Ltd
Current assignee: Qingdao Hisense Laser Display Co Ltd
Priority date: 2019-11-19
Filing date: 2019-11-19
Publication date: 2021-06-04

Abstract

The application discloses laser belongs to the technical field of photoelectricity. The laser comprises a backplane; a pipe shell; the bottom plate and the tube shell enclose to form an accommodating space, the plurality of laser chips and the reflecting prism are positioned on the bottom plate in the accommodating space, and the reflecting prism is used for emitting light rays emitted by the laser chips in a direction far away from the bottom plate; the annular upper cover is fixed on the pipe shell; the supporting frame is fixed to the upper cover at the edge of the periphery of the supporting frame, the middle area of the supporting frame comprises n first hollow areas, and n is a positive integer; the peripheral edge of the light-transmitting sealing layer is welded with the surface, far away from the bottom plate, of the supporting frame through low-temperature glass solder and covers the n first hollow-out areas; the first hollow-out area is used for transmitting light emitted by at least one laser chip. The application solves the problem that the luminous brightness of the laser is low. The application is used for light emission.

Description

Laser device

Technical Field

The application relates to the field of photoelectric technology, in particular to a laser.

Background

With the development of the optoelectronic technology, the laser is widely used.

The laser comprises a base plate, a tube shell, a plurality of laser chips, a plurality of reflecting prisms, an upper cover, a supporting frame, a sealing glass layer and a collimating lens layer. The tube shell, the plurality of laser chips and the plurality of reflecting prisms are all positioned on the bottom plate, and the tube shell is annular and surrounds the plurality of laser chips and the plurality of prisms; the plurality of laser chips correspond to the plurality of reflecting prisms one by one, each reflecting prism is positioned at the light-emitting side of the corresponding laser chip, and the reflecting prisms are used for reflecting the light rays emitted by the corresponding laser chips; the upper cover, the supporting frame, the sealing glass layer and the collimating lens layer are sequentially overlapped on one side, away from the bottom plate, of the laser chip along the direction away from the bottom plate. In the related art, the supporting frame has a plurality of hollow areas, the sealing glass layer includes a plurality of pieces of sealing glass covering the plurality of hollow areas in a one-to-one correspondence manner, and each piece of sealing glass is attached to the supporting frame by the sealing adhesive. A plurality of laser chips in the laser correspond to the plurality of pieces of sealing glass one by one, and light rays emitted by each laser chip penetrate through the corresponding sealing glass to be emitted.

In order to avoid the corrosion of the laser chip by water and oxygen in the outside air, the laser chip, the reflecting prism and other structures need to be arranged in a sealed accommodating space surrounded by the bottom plate, the tube shell, the upper cover, the supporting frame and the sealing glass layer. However, in the related art, the adhesive effect of the sealant on the sealing glass and the supporting frame is poor, so that the sealing performance of the enclosed accommodating space is poor, and a laser chip in the laser is easily corroded by water and oxygen in the outside air. Therefore, the lifetime of the laser is short.

Disclosure of Invention

The application provides a laser, can solve the short problem in life-span of laser. The technical scheme is as follows:

in one aspect, a laser is provided, the laser comprising:

a base plate;

a pipe shell;

the bottom plate and the pipe shell enclose a containing space,

in the accommodating space, a plurality of laser chips and a reflection prism are positioned on the bottom plate,

the reflecting prism is used for emitting the light rays emitted by the laser chip along the direction far away from the bottom plate;

the annular upper cover is fixed on the pipe shell;

the supporting frame is fixed to the upper cover at the edge of the periphery of the supporting frame, the middle area of the supporting frame comprises n first hollow areas, and n is a positive integer;

the peripheral edge of the light-transmitting sealing layer is welded with the surface, far away from the bottom plate, of the supporting frame through low-temperature glass solder, and covers the n first hollow-out areas;

the first hollowed-out area is used for transmitting light rays emitted by at least one laser chip.

The beneficial effect that technical scheme that this application provided brought includes at least:

in the laser instrument that this application provided, through low temperature glass solder welding printing opacity sealing layer and carriage, the sealed effect of low temperature glass solder is better, and then makes the laminating effect of printing opacity sealing layer and carriage better. Therefore, the sealing performance of the accommodating space surrounded by the bottom plate, the tube shell, the upper cover, the supporting frame and the light-transmitting sealing layer is good, the laser chip in the laser can be prevented from being corroded by water and oxygen in the outside air, and the service life of the laser can be prolonged.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

Fig. 1 is a schematic structural diagram of a laser provided in an embodiment of the present application;

FIG. 2 is a schematic structural diagram of another laser provided in an embodiment of the present application;

fig. 3 is a schematic structural diagram of another laser provided in an embodiment of the present application;

fig. 4 is a schematic partial structural diagram of a laser provided in an embodiment of the present application;

FIG. 5 is a schematic diagram of a portion of another laser according to another embodiment of the present application;

FIG. 6 is a schematic structural diagram of another laser provided in the embodiments of the present application;

fig. 7 is a schematic structural diagram of a laser according to another embodiment of the present application;

FIG. 8 is a schematic diagram of a portion of another laser according to an embodiment of the present disclosure;

FIG. 9 is a schematic diagram of another laser structure provided in another embodiment of the present application;

FIG. 10 is a schematic diagram of another laser according to another embodiment of the present application;

FIG. 11 is a schematic diagram of a target axisymmetric pattern provided by an embodiment of the present application;

FIG. 12 is a schematic diagram of another laser according to another embodiment of the present application;

fig. 13 is a schematic structural diagram of a laser according to yet another embodiment of the present application;

fig. 14 is a flowchart of a method for manufacturing a laser according to an embodiment of the present disclosure.

Detailed Description

To make the objects, technical solutions and advantages of the present application more clear, embodiments of the present application will be described in further detail below with reference to the accompanying drawings.

With the development of the optoelectronic technology, the application of the laser is wider and wider, for example, the laser can be applied to the aspects of welding process, cutting process, laser projection, etc., and the requirements for miniaturization, thinning and light emitting efficiency of the laser are higher and higher at present. The following embodiments of the present application provide a laser, which can make the laser have high light emitting efficiency and small volume.

Fig. 1 is a schematic structural diagram of a laser provided in an embodiment of the present application, and fig. 2 is a schematic structural diagram of another laser provided in an embodiment of the present application. Fig. 1 is an exploded view of the laser shown in fig. 2, and fig. 2 is a view of a section a-a' of the laser shown in fig. 1. Referring to fig. 1 and 2, a laser 10 includes: a base plate 101, an envelope 102, a plurality of laser chips 103, at least one reflection prism 104, an annular upper cover 106, a support frame 1051, and a light-transmissive sealing layer 1052. It should be noted that fig. 1 only illustrates the positions of the cross section a-a 'in the base plate 101, the package 102, the laser chip 103, and the reflection prism 104, and does not illustrate the positions of the cross section a-a' in the upper cover 106, the support frame 1052, and the light-transmissive sealing layer 1052.

The package 102 and the bottom plate 101 form an accommodating space, the plurality of laser chips 103 and the at least one reflection prism 104 are both located on the bottom plate 101, and the package 102 is annular and surrounds the plurality of laser chips 103 and the at least one reflection prism 104. A cover 106 is secured to the surface of housing 102 remote from base 101. The peripheral edge of the support frame 1051 is fixed to the upper cover 106, and the middle area of the support frame 1051 has n first hollow areas W, where n is a positive integer. The first hollow area W is used for transmitting the light emitted from the at least one laser chip 103. The peripheral edge of the light-transmitting sealing layer 1052 is welded to the surface of the support frame 1051 away from the bottom plate 101 by the low-temperature glass solder H, and the light-transmitting sealing layer 1052 covers the side of the n first hollow-out regions W away from the bottom plate 101. For example, the low-temperature glass solder H may be enclosed in a ring shape and enclose the light-transmissive sealing layer 1052, so that the side surface of the light-transmissive sealing layer 1052 is soldered to the surface of the support frame 1051 away from the bottom plate 101.

It should be noted that the light-transmissive sealing layer 1052 may be a plate-shaped structure, and the light-transmissive sealing layer 1052 has two larger surfaces and a plurality of smaller surfaces, wherein the plurality of smaller surfaces are a plurality of sides of the light-transmissive sealing layer 1052. Alternatively, the two larger surfaces may be parallel. Alternatively, the two larger surfaces may be parallel to the plane of the base plate 101.

The reflecting prism 104 in the laser 10 is used for emitting the light emitted from the laser chip 103 in a direction away from the base 101, and each of the first hollow areas W is used for transmitting the light emitted from at least one laser chip 103. Illustratively, each reflection prism 104 corresponds to one or more laser chips 103, each first hollow area W corresponds to one or more laser chips 103, the reflection prism 104 is located on the light emitting side of the corresponding laser chip 103, and the reflection prism 104 is configured to emit the light emitted from the corresponding laser chip 103 in a direction away from the base plate 101, and further reflect the light to the first hollow area W corresponding to the laser chip 103. Furthermore, each first hollow area W can transmit the light emitted by the at least one laser chip 103 corresponding to the first hollow area W.

It should be noted that fig. 1 and fig. 2 take an example that each reflection prism 104 corresponds to one laser chip 103, that is, each reflection prism 104 is used for emitting the light emitted from one laser chip 103 in a direction away from the base plate 101. It is illustrated that n is 4, that is, the middle area of the supporting frame 1051 has 4 first hollow areas W, and each first hollow area W corresponds to 5 laser chips 103, that is, each first hollow area W is used for transmitting light emitted by 5 laser chips. Optionally, there may also be a reflective prism 104 in the laser 10 corresponding to the plurality of laser chips 103; n may also be 1, 2 or 3 or even more, and each hollow area W may also correspond to 1, 2, 3 or 4 laser chips, which is not limited in this embodiment of the application.

In the laser 10 shown in fig. 1 and 2, the light emitted from each laser chip 103 may be emitted to the corresponding reflection prism 104, and reflected on the surface of the reflection prism 104 close to the laser chip 103, and then emitted to the corresponding first hollow area W of the laser chip 103. In the laser 10 shown in fig. 1 and 2, each first hollow area W can transmit the light emitted from its corresponding 5 laser chips 105.

To sum up, among the laser instrument that this application embodiment provided, through low temperature glass solder welding printing opacity sealing layer and carriage, low temperature glass solder's sealed effect is better, and then makes the laminating effect of printing opacity sealing layer and carriage better. Therefore, the sealing performance of the accommodating space surrounded by the bottom plate, the tube shell, the upper cover, the supporting frame and the light-transmitting sealing layer is good, the laser chip in the laser can be prevented from being corroded by water and oxygen in the outside air, and the service life of the laser can be prolonged.

Alternatively, the laser chip 103 may be disposed on the base plate 101 through a heat sink, which is not labeled in fig. 1 and 2. The heat sink may be made of a material having a large thermal conductivity, and the heat sink may allow heat generated when the laser chip 103 emits light to be more rapidly dissipated.

The support frame 1051 in the laser 10 is described below:

optionally, each first hollow-out region K in the supporting frame 1051 may correspond to at least two laser chips 103, and the first hollow-out region K may transmit light emitted by its corresponding laser chip 103. The area that does not fretwork in the carriage 1051 is less, and then has reduced the light that laser instrument chip 103 jetted out and has been blockked and the light that loses because by carriage 1051 for the light that laser instrument chip 103 jetted out is utilized more, has improved the luminous luminance and the luminous effect of laser instrument.

Optionally, in this embodiment, the material of the support frame 1051 may be kovar, such as iron-nickel-cobalt alloy, stainless steel, or other alloys. The light-transmitting sealing layer 1052 may be made of sealing glass, or may be made of other light-transmitting and highly reliable materials, such as a resin material, which is not limited in this embodiment of the present application.

Optionally, with continued reference to fig. 1 and fig. 2, the first hollow-out areas W in the supporting frame 1051 may be in a strip shape, and the n first hollow-out areas W may be sequentially arranged along the width direction of the first hollow-out areas W. The support frame 1051 having such a structure can be called a herringbone support frame. For example, the width direction may be an x direction shown in fig. 1, and the extending direction of each first hollow area W is a y direction perpendicular to the x direction.

It should be noted that, in the supporting frame 1051 shaped like a Chinese character 'mu', the un-hollowed-out region between the adjacent first hollowed-out regions W can support the light-transmitting sealant 1052 thereon, so as to prevent the middle portion of the light-transmitting sealant 1052 from collapsing, ensure the firmness of the light-transmitting sealant 1052, and further ensure the sealing effect of the accommodating space enclosed by the bottom plate 101, the tube shell 102, the upper cover 106, the supporting frame 1051 and the light-transmitting sealant 1052.

Alternatively, with continued reference to fig. 1 and fig. 2, the plurality of laser chips 103 in the laser 10 may include a plurality of rows and a plurality of columns of laser chips 103, that is, the plurality of laser chips 103 may be arranged in a plurality of rows and a plurality of columns. For example, the x direction in fig. 1 may be a column direction of the rows and columns of laser chips 103, and the y direction may be a row direction of the rows and columns of laser chips 103. Each of the first hollow areas W in the supporting frame 1051 may correspond to at least one row of the laser chips 103, that is, each of the first hollow areas W may be used for transmitting light emitted from at least one row of the laser chips 103.

It should be noted that, in fig. 1 and fig. 2, each first hollow area W corresponds to only one row of laser chips for transmitting the light emitted from the row of laser chips 103. Optionally, the first hollow-out region W may also exist in the support frame 1051, and may correspond to two rows or three rows of laser chips, or each first hollow-out region W in the support frame 1051 may also correspond to two rows or three rows of laser chips, which is not limited in this embodiment of the application.

Fig. 3 is a schematic structural diagram of another laser provided in an embodiment of the present application. As shown in fig. 3, n is 1, that is, the middle region of the support frame 1051 has only one first hollow region W. The first hollow area W may correspond to all the laser chips 103 in the laser 10, and the light emitted from each laser chip 103 may be emitted through the first hollow area W after being reflected by the corresponding reflection prism 104. The support frame 1051 having such a structure can be called a square-shaped support frame.

It should be noted that there is no portion shielding the light emitted from the laser chip 103 in the square supporting frame, and the light emitted from the laser chip 103 can be fully utilized, so as to further improve the brightness of the light emitted from the laser and improve the light emitting effect of the laser.

It should be further noted that in the embodiment of the present application, the shielding of the light emitted from the laser chip by the non-hollowed-out region in the supporting frame can be considered less, so that the setting density of the laser chip in the laser device is higher, the size of the laser device can be reduced, and the miniaturization of the laser device is facilitated. Compared with lasers with the same volume in the related art, as more laser chips can be arranged in the laser provided in the embodiment of the application, the laser can emit more light rays, and the light rays emitted by the laser have higher brightness and stronger intensity.

In addition, in the embodiment of the application, since only a small number of hollow areas need to be arranged on the supporting frame, the flatness of the surface of the supporting frame away from the bottom plate can be ensured, and the flatness can be smaller than 0.3 mm. Further, the inclination angle when the light-transmitting sealing layer is provided on the support frame is small, and may be, for example, less than or equal to 0.5 degrees. Because the inclination angle of the light-transmitting sealing layer is smaller, the optical path of light emitted by the laser chip in the light-transmitting sealing layer can be reduced, the absorption of the light-transmitting sealing layer to the light is reduced, and the utilization rate of the light is improved.

Optionally, a brightness enhancement film may be attached to at least one of the surface of the light transmissive sealing layer 1052 close to the bottom plate 101 and the surface far from the bottom plate 101 to improve the light output brightness of the laser.

Alternatively, fig. 4 is a partial structural schematic diagram of a laser provided in an embodiment of the present application, fig. 5 is a partial structural schematic diagram of another laser provided in an embodiment of the present application, and fig. 4 and fig. 5 only show the support frame 1051 and the light-transmissive sealing layer 1052 in the laser 10. Fig. 4 is an exploded view of the structure shown in fig. 5, fig. 5 is a view of a section b-b ' in the structure shown in fig. 4, and fig. 4 only illustrates the position of the section b-b ' in the support frame 1051, and does not illustrate the position of the section b-b ' in other structures. In fig. 4, a supporting frame 1051 is illustrated in a square shape.

Fig. 6 is a schematic structural diagram of another laser provided in an embodiment of the present application, and fig. 7 is a schematic structural diagram of a laser provided in another embodiment of the present application. Fig. 6 is an exploded view of the laser shown in fig. 7, fig. 7 is a view of a section b-b ' of the laser shown in fig. 6, and fig. 6 only illustrates the location of the section b-b ' in the base plate 101 and the package 102, and does not illustrate the location of the section b-b ' in other structures of the laser 10. Fig. 6 and 7 illustrate an example in which the support frame 1051 of the laser 10 is in a mesh shape.

Referring to fig. 4 and 5, the middle region of the supporting frame 1051 is recessed toward the bottom plate 101 relative to the peripheral edge of the supporting frame 1051. When the support frame 1051 is square, that is, annular, the middle region of the support frame 1051 refers to the inner region of the support frame 1051, and the peripheral edge of the support frame 1051 refers to the outer region of the support frame 1051. At least two steps J1 are formed at the connection position of the middle area of the support frame 1051 and the peripheral edge of the support frame 1051 at the side of the support frame 1051 far away from the bottom plate 101, that is, the connection position has at least two steps J1. It should be noted that fig. 4 and 5 both illustrate that the connection portion 1 has three steps J1, and optionally, the number of the steps J1 may also be 4, 5, or even more. Optionally, the number of the steps may also be less than 3, for example, the number of the steps may also be 2 or 1.

In the embodiment of the present application, because the supporting frame 1051 is away from one side of the bottom plate 101, and the step J1 exists at the joint between the middle region of the supporting frame 1051 and the peripheral edge of the supporting frame 1051, the contact area between the low-temperature glass solder H and the surface of the supporting frame 1051 away from the bottom plate 101 is relatively large, so that the adhesion firmness between the light-transmitting sealing layer 1052 and the supporting frame 105 can be improved, and the sealing effect of the accommodating space in the laser device is further improved.

In the embodiment of the present application, the material of the low-temperature glass solder H includes low-temperature glass, that is, low-melting glass. Optionally, the low temperature glass has a melting temperature of less than 450 degrees, which may be 400 degrees. Alternatively, the low temperature glass may be a lead-free low melting point glass; the low-temperature glass can be D40. Optionally, the low-temperature glass may also be a lead-containing low-melting-point glass, which is not limited in the embodiments of the present application. In the present embodiment, the unit "degree" used to indicate the temperature is all referred to as "degree centigrade".

When the support frame 1051 and the light-transmitting sealing layer 1052 are welded by using the low-temperature glass solder H, the low-temperature glass powder may be first placed in a mold with a desired shape (such as a ring shape) to be compacted, and then the structure composed of the compacted low-temperature glass powder is placed in a low-temperature furnace to be sintered, so as to obtain the low-temperature glass solder H with a desired shape. In the embodiment of the present application, after the annular low-temperature glass solder H is obtained, the low-temperature glass solder H may be placed on the support frame 1051 and surround the light-transmitting sealing layer 1052. Further, the structure composed of the support frame 1051, the translucent sealing layer 1052, and the low-temperature glass solder H is collectively placed in a low-temperature furnace and sintered, so that the low-temperature glass solder H melts and fills the gap between the edge of the translucent sealing layer 1052 and the support frame 1051, thereby welding the support frame 1051 and the translucent sealing layer 1052. The edge of the light-transmitting sealing layer 1052 and the supporting frame 1051 can be tightly attached by low-temperature glass solder H, so that the tightness of the accommodating space enclosed by the bottom plate 101, the tube shell 102, the upper cover 106, the supporting frame 1051 and the light-transmitting sealing layer 1052 is ensured.

In the embodiment of the application, the annular low-temperature glass solder H surrounds the light-transmitting sealing layer 1052 during welding, and can also limit the light-transmitting sealing layer 1052, so that the light-transmitting sealing layer 1052 is prevented from shifting during welding with the supporting frame 1051, and the welding precision of the light-transmitting sealing layer 1052 is ensured. It should be noted that the melting point of the brightness enhancement film attached to the surface of the light-transmissive sealing layer 1052 is usually higher than 450 ℃, and the low-temperature glass solder is used to solder the light-transmissive sealing layer 1052 to avoid damage to the brightness enhancement film.

Optionally, for the support frame 1051 in the shape of the Chinese character 'mu', before the light-transmitting sealing layer 1052 is placed on the support frame 1051, an adhesive material may be further coated on the un-hollowed-out area between the adjacent first hollowed-out areas W in the middle area of the support frame 1051, so as to further improve the adhesive strength between the support frame 1051 and the light-transmitting sealing layer 1052. The un-hollowed-out areas between adjacent first hollowed-out areas W may be referred to as support crossbars, and the adhesive material may include glass adhesive or epoxy sealant. Optionally, the low-temperature glass solder in the embodiment of the present application may also be replaced by other sealing materials, such as epoxy sealant or other sealing glues, which is not limited in the embodiment of the present application.

It should be noted that, in the related art, the support frame has a plurality of small grid-shaped panes, and a separate small glass needs to be correspondingly adhered to each small pane, so that the adhering process is complex, the adhering efficiency is low, and the adhering effect is difficult to control. In the embodiment of the application, the bonding is only carried out at the peripheral edge of the supporting frame and the position of the supporting transverse bar, or the bonding is only carried out at the peripheral edge of the supporting frame, so that the bonding process is simplified, the bonding efficiency is improved, and the bonding effect is easier to control.

In order to prevent the laser chip, the reflecting prism, and other structures from being corroded by water and oxygen in the outside air and ensure the service life of the laser, the laser chip, the reflecting prism, and other structures need to be arranged in a sealed space. In the embodiment of the present application, the bottom plate 101, the package 102, the upper cover 106, the support frame 1051 and the light-transmissive sealing layer 1052 together form a sealed space. In addition, the supporting frame 1051 and the light-transmitting sealing layer 1052 are sealed by the low-temperature glass solder in the embodiment of the application, the sealing effect is better, the air tightness of the laser can be improved, and the service life of the laser is further prolonged.

The upper cover 106 in the embodiment of the present application is used to carry the support frame 1051. The upper cover 106 may be a square frame with an inner area recessed toward the bottom plate, and the thickness of each position of the upper cover 106 is the same, such as 0.2 mm. Alternatively, the thickness may also be less than 0.15 mm, such as 0.12 mm. The upper cover 106 may be formed by a stamping process using an annular plate-like structure.

For example, the light-transmissive sealing layer 1052 may be welded to the supporting frame 1051, and then the combined structure of the supporting frame 1051 and the light-transmissive sealing layer 1052 may be placed in the inner region of the recess of the upper cover 106, and the combined structure and the upper cover 106 may be welded by using a sealing material. The combined structure and the upper cover 106 are welded to obtain a structure called an upper cover assembly, and in this case, the base plate 101, the case 102 and the upper cover assembly may together enclose a sealed space. Optionally, in this embodiment of the application, the supporting frame 1051 may be welded to the upper cover 106, and then the light-transmitting sealing layer 1052 is welded to the supporting frame 1051, so as to obtain the upper cover assembly.

Optionally, the sealing material here may also be a low-temperature glass solder, and the process of soldering with the low-temperature glass solder may refer to the above-mentioned soldering process for the support frame 1051 and the light-transmitting sealing layer 1052, which is not described herein again in this embodiment of the present application. Optionally, the sealing material may also be an epoxy glue seal, a silver-tin solder, or the like, which is not limited in this embodiment.

Fig. 8 is a partial structural schematic view of another laser provided in an embodiment of the present application, fig. 9 is a structural schematic view of another laser provided in another embodiment of the present application, and fig. 8 only shows an upper cover assembly in the laser, that is, the upper cover 106, the support frame 1051, and the light-transmissive sealing layer 1052 in the laser. Fig. 9 shows a laser including the structure shown in fig. 8, and fig. 8 is an exploded view of the laser shown in fig. 9 after the upper cover assembly is turned over by 180 degrees. Referring to fig. 8 and 9, the upper cover 106 is ring-shaped, and the inner region q2 of the surface of the upper cover 106 close to the bottom plate 101 is that the outer region q1 of the surface of the upper cover 106 close to the bottom plate 101 is attached to the surface of the case 102 far from the bottom plate 101, and the inner region q2 is attached to the surface of the support frame 1051 far from the bottom plate 101. Optionally, the lateral region q1 is recessed relative to the medial region q 2. Optionally, the surface of the upper cover 106 away from the bottom plate 101 is planar.

In fig. 8, a supporting frame 1051 in a mesh-like shape is shown as an example, and the supporting frame 1051 may be the square-like supporting frame described above.

Alternatively, the upper cover 106 shown in fig. 8 may be obtained by etching an outer region on one surface of an annular plate-like structure, and the thickness of the annular plate-like structure may be the same as that of a portion of the upper cover where the inner region is located. Optionally, the thickness of the portion of the upper cover 106 where the outer region q1 is located may be less than or equal to 0.15 mm, for example, the thickness may be 0.12 mm, and the thickness of the portion of the upper cover 106 where the inner region q2 is located may range from 0.2 mm to 0.5 mm, for example, the thickness may be 0.4 mm.

In forming the upper cover 106 shown in fig. 8, the inner region q2 on the surface of the upper cover 106 close to the bottom plate 101 does not need to be processed, and therefore the flatness of the inner region q2 is high. And then the laminating degree of difficulty of carriage 1051 and this inboard region q2 is lower, and the laminating effect can be better, can further improve the sealed effect of upper cover subassembly.

Alternatively, after the upper cover 106 is manufactured, the peripheral edge of the support frame 1051 may be welded to the inside region q2 in the upper cover 106, and then the light transmissive sealing layer 1052 may be placed on the support frame 1051 from the side of the upper cover 106 away from the support frame 1051, and then the light transmissive sealing layer 1052 may be welded to the support frame 1051 to obtain the upper cover assembly. The outer area of the surface of cover 106 adjacent to base 101 may then be welded to the surface of housing 102 remote from base 101.

Alternatively, the inner region q2 and the surface of the support frame 1051 away from the base plate 101 may be bonded by a sealing material, and the outer region q1 and the surface of the package 102 away from the base plate 101 may be bonded by a parallel sealing process. The sealing material may be any of the sealing materials described above.

In the embodiment of the present invention, the upper cover 106 and the support frame 1051 are illustrated as two separate structures, and optionally, the upper cover 106 and the support frame 1051 may be integrally formed. For example, a plate-shaped structure may be etched, so as to obtain the integrated upper cover 106 and the supporting frame 1051.

Optionally, the laser may further include: and the collimating lens layer is positioned on one side of the laser chip far away from the bottom plate. For example, with continued reference to fig. 6 and 7, the collimating lens layer 107 may be located in the accommodating space enclosed by the bottom plate 101, the package 102, the upper cover 106, the supporting frame 1051 and the light-transmissive sealing layer 1052, that is, the collimating lens layer 107 is located between the supporting frame 1051 and the laser chip 103. The collimating lens layer 107 is used for collimating the light reflected by the reflecting prism 104 and then emitting the collimated light to the n first hollow areas W in the supporting frame 1051. It should be noted that, collimating the light, that is, converging the light, makes the divergence angle of the light smaller, and is closer to the parallel light. Alternatively, fig. 10 is a schematic structural diagram of another laser provided in another embodiment of the present application, and as shown in fig. 9 and 10, the collimating lens layer 107 may also be located on a side of the light-transmissive sealing layer 1052 away from the bottom plate 101.

As shown in fig. 6 and 7, when the collimating lens layer 107 is located between the support frame 1051 and the laser chip 103, the collimating lens layer 107 may be fixed by: the inner annular surface of the envelope 102 has a boss T on which the collimating lens layer 107 overlaps, the boss T supporting the collimating lens layer 107.

Alternatively, referring to fig. 6, the inner annular surface of the shell 102 may have only one boss T, which may be annular, which may be coaxial with the shell 102. The orthographic projection of this boss T on the base plate 101 may surround the laser chip 103 and the reflection prism 104 on the base plate 101.

Optionally, the inner annular surface of the tube shell may also have a plurality of protrusions, and the plurality of protrusions may be at least distributed on two opposite surfaces of the inner annular surface of the tube shell to at least align with two opposite side edges of the straight lens layer for supporting, which is not illustrated in this embodiment of the application.

When the collimating lens layer 107 is located on the side of the light-transmissive sealing layer 1052 away from the bottom plate 101, the collimating lens layer 107 may be attached to the surface of the light-transmissive sealing layer 1052 away from the bottom plate 101 by an adhesive material.

The collimating lens layer 107 may have a variety of alternative configurations, two of which are explained below:

in a first configuration, with continued reference to fig. 6, 7, and 9, the collimating lens layer 107 can include: a plurality of collimating lens structures 1071 and a carrying structure 1072 carrying the plurality of collimating lens structures 1071, wherein an edge region of the carrying structure 1072 overlaps the boss T on the inner annular surface of the envelope 102, and each collimating lens structure 1071 may include a collimating lens (not shown). Optionally, the collimating lens structures 1071 are located on a side of the carrying structure 1072 away from the bottom plate 101, and the carrying structure 1072 may be made of a light-transmitting material. Alternatively, the plurality of collimating lenses 1072 may be integrally formed with the carrier structure 1071. For example, the collimating lens layer 107 may be prepared by using a mold press.

In a second configuration, as shown in fig. 10, the collimating lens layer 107 may include: an annular support member 1073, a carrier structure 1072, and a plurality of collimating lens structures 1071. The support member 1073 may be affixed to the package 102, such as when the support member 1073 is located on the side of the light-transmissive seal 1052 remote from the bottom plate 101, the support member 1073 may be affixed to the surface of the package 102 remote from the bottom plate 101 (as shown in fig. 10); when the supporting member 1073 is located on the side of the light-transmitting sealant 1052 close to the bottom plate 101, the supporting member 1073 may be fixed to a boss provided on the inner circumferential surface of the package 102 (this is not illustrated in the embodiment of the present application). The periphery of the carrying structure 1072 may be fixed on the supporting member 1073, the middle area of the carrying structure 1072 has a plurality of second hollow areas K, and the plurality of collimating lens structures 1071 are covered on one side of the plurality of second hollow areas K away from the bottom plate 101 in a one-to-one correspondence manner. The collimating lens structure 1071 is used for collimating and emitting the light emitted from the at least one laser chip 103 reflected by the reflecting prism 104.

It should be noted that, in the embodiment of the present application, a side of the collimating lens structure 1071 away from the bottom plate 101 may have at least one convex arc surface bending toward the side away from the bottom plate 101, and a portion of each convex arc surface in the collimating lens structure 1071 may be regarded as a collimating lens, and then the collimating lens structure 1071 may include at least one collimating lens. The collimating lens can be the convex lens of plano-convex form, and collimating lens can have a convex cambered surface and a plane, and this plane can be on a parallel with the face of bottom plate 101, and is close to bottom plate 101 and sets up, and this convex cambered surface and plane can be two relative faces. The side of the collimating lens structure 1071 facing away from the base plate 101 may have each convex curve as in a collimating lens.

Fig. 10 illustrates an example in which each collimator lens structure 1071 includes one collimator lens. Alternatively, when one collimator lens structure includes a plurality of collimator lenses, the plurality of collimator lenses may be connected to each other as an integral structure, or the collimator lens structure 1071 may further include a carrier carrying the plurality of collimator lenses. In the collimating lens layer of this second structure, the collimating lens may not be integrally formed with the carrier structure 1072.

Optionally, when the collimating lens structure 1071 includes a plurality of collimating lenses, the second hollow-out regions K in the carrying structure 1072 may be in a shape of a strip, and the plurality of second hollow-out regions K in the carrying structure 1072 may be sequentially arranged along a width direction of the second hollow-out regions K. Alternatively, the plurality of laser chips 103 in the laser 10 may include a plurality of rows and a plurality of columns of laser chips 103, and each collimating lens structure 1071 may correspond to at least one row of laser chips 103. That is, each collimating lens structure 1071 may be configured to collimate light emitted from at least one row of laser chips 103 reflected by the reflecting prism 104.

Alternatively, the second hollow-out region K may be rectangular, oval or in a target axisymmetric shape shown in fig. 11, the target axisymmetric shape is surrounded by two opposite straight sides and two opposite arc sides, and the target axisymmetric shape is a convex figure. The target axis symmetry shape may be a racetrack shape. Fig. 10 illustrates the second hollow area K as a rectangle. For example, the length of the rectangle may be 5 mm, the width may be 3 mm, and the length and the width of the rectangle may also be other values, which is not limited in this embodiment of the application. It should be noted that the shape of the second hollow-out area K may be designed according to the light type of the light emitted by the laser chip 103 after being reflected by the corresponding reflection prism 104, and it is only necessary to ensure that the light emitted by the laser chip 103 can be reflected by the corresponding reflection prism 104 and then can penetrate through the second hollow-out area K.

Optionally, the shape of the collimating lens structure 1071 corresponds to the shape of the second hollowed-out area K it covers. For example, the bottom surface of the collimating lens structure 1071 may have the same shape as the second hollow area K covered therewith. In the embodiment of the present application, when the collimating lens structure 1071 includes only one collimating lens, the collimating lens structure 1071 can be obtained by performing a trimming process on an existing circular lens. When the bottom surface of the collimating lens structure 1071 is rectangular, it can be obtained by cutting off four edges of a circular lens; when the bottom surface of the collimating lens structure 1071 has a shape that is axisymmetric to the target, it can be obtained by cutting off opposite edges of a circular lens.

Alternatively, the structure of the supporting member 1073 may be the same as that of the upper lid 106, and for the supporting member 1073, refer to the above description of the upper lid 106; when the second hollow area K in the carrying structure 1072 is used for transmitting the light emitted from the plurality of laser chips, the carrying structure 1072 and the support frame 1051 may have the same structure, and the description of the carrying structure 1072 may refer to the description of the support frame 1051; for the assembling or welding manner of the carrying structure 1072 and the supporting component 1073, reference may be made to the above-mentioned description of the assembling or welding manner of the supporting frame 1051 and the upper cover 106, and no further description is given in this embodiment of the present application.

Alternatively, when forming the collimating lens layer 107 of the second structure, each collimating lens structure 1071 may be independently disposed above the second hollow-out region K that needs to be covered by the collimating lens structure 1071. When the collimating lens layer 107 shown in fig. 10 is formed, each collimating lens structure 1071 may be independently disposed on one second hollow area K. Therefore, when the collimator lens structure 1071 is provided, the position of the collimator lens structure 1071 can be adjusted according to the light beam emitted from the laser chip 103 corresponding to the collimator lens structure 1071. The setting position of the collimating lens structure 1071 can be adjusted, so that the light rays emitted from the laser chip 103 at the central position pass through the vertex of the collimating lens in the collimating lens structure 1071, the collimating effect of the collimating lens structure 1071 on the light beams is better, and the parallelism of the emergent light rays is better.

Alternatively, when forming the collimating lens layer 107 of the second structure, each collimating lens structure 1071 may be welded to the carrier structure 1072 by a sealing material, and then the carrier structure 1072 to which the collimating lens structure is welded may be placed in an inner area of the recess of the supporting member 1073, and the carrier structure 1072 and the supporting member 1073 may be welded by a sealing material, thereby obtaining the collimating lens layer 107. Optionally, in this embodiment of the application, the carrying structure 107 may be welded to the supporting member 1073, and then the collimating lens structure 1071 and the carrying structure 1072 are welded to obtain the collimating lens layer 107.

For the collimating lens layer 107 with any of the above structures, all the collimating lenses correspond to all the laser chips 103 in the laser 10 one by one, and the reflecting prism 104 in the laser 10 is used for reflecting the light emitted from the corresponding laser chip 103 to the collimating lens corresponding to the laser chip 103. The light emitted from each laser chip 103 is reflected by the corresponding reflection prism 104 and then emitted to the corresponding collimating lens of the laser chip 103, and the light is converted into collimated light under the action of the collimating lens and then emitted.

It should be noted that fig. 6 and 7 exemplify the collimating lens layer 107 having the first structure when the collimating lens layer 107 is located between the support frame 1051 and the laser chip 103; fig. 10 illustrates an example in which the collimating lens layer 107 has the second structure when the collimating lens layer 107 is located on the side of the light-transmitting seal 1052 remote from the bottom plate 101. Alternatively, when the collimating lens layer 107 is located between the supporting frame 1051 and the laser chip 103, the collimating lens layer 107 may also be the collimating lens layer of the second structure; when the collimating lens layer 107 is located on the side of the light-transmitting sealing layer 1052 away from the bottom plate 101, the collimating lens layer 107 is the collimating lens layer of the first structure.

It should be noted that in the embodiment of the present application, when the collimating lens layer 107 is located between the supporting frame 1051 and the laser chip 103, the distance between the collimating lens layer 107 and the laser chip 103 can be reduced. Because the light that laser instrument chip 103 sent is the toper light, has certain divergence angle, and collimating lens is more close to laser instrument chip 103, and the facula that forms when the light that laser instrument chip 103 jetted out shoots at the collimating lens that corresponds is littleer, and the facula of the parallel beam that forms after collimating lens adjustment light direction also can be littleer, and then can promote the collimation degree of the light that laser instrument 10 jetted out. In addition, because the light spot formed on the collimating lens by the light rays emitted to the collimating lens is smaller, the area of the collimating lens can be smaller, and the whole volume of the collimating lens layer can be smaller.

In addition, since the light emitted from the laser chips 103 can reach the collimating lens with a smaller distance, the light mixing between the light emitted from different laser chips 103 is reduced, the distance between the laser chips 103 can be reduced, and the arrangement of the laser chips 103 can be more free. Furthermore, the light-emitting requirements of lasers with different powers can be met, and the volume of the whole laser can be reduced.

It should be noted that, when the distance between the collimating lens layer 107 and the laser chip 103 is reduced, the curvature of the collimating lens, that is, the curvature of the convex arc surface, may also be reduced correspondingly. As when the collimating lens layer 107 is positioned between the support frame 1051 and the laser chip 103, the curvature of the collimating lens may decrease accordingly. Alternatively, the curvature radius of the collimating lens (i.e. the curvature radius of the convex cambered surface in the collimating lens) may range from 1 mm to 4.5 mm.

With continued reference to fig. 6, 7, and 9, the laser 10 may further include: a conductive pin 108 penetrating through a sidewall of the package 102, an orthographic projection of the package 102 and the conductive pin 108 on the bottom plate 101 may be located at a peripheral edge Q2 of the bottom plate 101, and an orthographic projection of the laser chip 103 and the reflective prism on the bottom plate 101 is located in a middle area C of the bottom plate 101; the peripheral edge Q2 of base plate 101 is recessed with respect to the central region C of base plate 101 toward the side away from package 102. In the embodiment of the present application, the orthographic projections of the conductive pins 108 on the bottom plate 101 are all located outside the middle area C of the bottom plate 101.

It should be noted that the conductive pin is electrically connected to an electrode of the laser chip to transmit an external power to the laser chip, so as to excite the laser chip to emit light.

Optionally, at least one step J2 is formed at the connection between the peripheral edge Q2 of the bottom plate 101 and the middle area C of the bottom plate 101 at the side of the bottom plate 101 close to the case 102, that is, the connection has at least one step J2. At least a partial orthographic projection of conductive lead 108 on base 101 is located on step J2, e.g., an orthographic projection of one of the two ends of conductive lead 108 extending into package 102 on base 101 is located on step J2.

Optionally, laser 10 includes a plurality of conductive leads 108, the plurality of conductive leads 108 being located on opposite sides of the central region C of base 101, and the junction of the peripheral edge Q2 of base 101 and the central region C of base 101 on the side of base 101 proximate package 102 having a plurality of steps J2 located on the opposite sides. Illustratively, the opposite sides are both sides of the middle area C of the bottom plate 101 in the y direction.

Fig. 6, 7, and 9 illustrate an example in which the connection between the peripheral edge Q2 of the bottom plate 101 and the middle region C of the bottom plate 101 has only two steps J2 located on opposite sides of the middle region C.

Alternatively, the material of the bottom plate 101 may be a conductive material. For example, the material of the base plate may include copper or aluminum. The chassis 101 allows heat generated from the laser chip 103 when emitting light to be more quickly dissipated to prevent damage to the laser chip 103 by the heat.

It should be noted that, in the embodiment of the present application, the peripheral edge Q2 of the bottom plate 101 where the orthographic projection of the conductive pin 108 on the bottom plate 101 is located is recessed towards the side away from the package 102 relative to the middle area C of the bottom plate 101, so that the situation that the conductive pin 108 is contacted with the bottom plate 101 to affect the conductive performance of the conductive pin is avoided, and the normal power supply to the laser chip is ensured. In addition, the connecting part of the peripheral edge of the bottom plate and the middle area of the bottom plate is provided with steps, so that the strength of the bottom plate can be ensured on the premise of ensuring the conductivity of the conductive pins.

In the embodiment of the application, the machining process is performed on the bottom plate twice, and then the preparation of the bottom plate is completed. Three platforms with different heights are formed in the first machining process, and the heights of the three platforms are sequentially from high to low, namely a middle area of the bottom plate, a step at the joint of the peripheral edge of the bottom plate and the middle area, and the peripheral edge of the bottom plate. At this time, the thickness of the middle region of the base plate is higher than that of the prepared base plate. And after the pipe shell is welded on the bottom plate, a milling cutter is adopted to perform secondary machining on the middle area of the bottom plate so as to finish the preparation of the bottom plate. For example, after the first machining process, the height difference between the step in the bottom plate and the peripheral edge of the bottom plate may be 0.13 mm, the height difference between the middle region of the bottom plate and the step may be 0.4 mm, and the height difference between the middle region of the finished bottom plate and the step may be 0.2 mm. It should be noted that the above-mentioned height difference is only an example, alternatively, the height difference between the step in the bottom plate and the peripheral edge of the bottom plate may have other values, and the height difference between the middle area of the bottom plate and the step may also have other values, such as 0.12 mm, 0.15 mm, or 0.3 mm.

Because the pipe shell and the bottom plate can be heated in the process of welding the pipe shell on the bottom plate, the high-temperature expansion coefficients of the pipe shell and the bottom plate are different generally, and the stresses in the pipe shell and the bottom plate can be pulled mutually, so that the middle area of the bottom plate is deformed. And then, the middle area of the bottom plate is machined for the second time, so that the middle area of the bottom plate becomes relatively flat, the accuracy and the reliability of the pasting position of the laser chip and the reflecting prism in the middle area of the bottom plate are further ensured, and the light collimation degree emitted by the laser is improved. Illustratively, the flatness of the middle region of the base plate in the embodiments of the present application may be less than 0.02 mm.

In addition, because the orthographic projection of the conductive pin on the bottom plate is positioned outside the middle area of the bottom plate in the embodiment of the application, the area of the middle area of the bottom plate is smaller, the flatness of the middle area of the bottom plate can be ensured more easily, and the middle area of the bottom plate can be flatter.

Optionally, the side wall of the package 102 has an opening, for example, the opening may have an aperture of 1.2 mm, and the conductive pin 108 may extend through the opening into the package 102. Alternatively, the diameter of the conductive pin 108 may be 0.55 millimeters; the shell 102 may be made of kovar.

In the embodiment of the present application, when assembling the laser, a ring-shaped solder structure (e.g., a ring-shaped glass bead) may be first placed in the opening on the sidewall of the package, and the conductive pin may be inserted through the solder structure and the opening where the solder structure is located. Then, the package is placed on the periphery of the base plate, annular silver-copper solder is placed between the base plate and the package, and then the base plate, the package and the structure of the conductive pins are placed in a high-temperature furnace for sealing and sintering. Because the glass can have the same physical new energy with kovar materials at the temperature of more than 800 ℃, the glass beads and the tube shell can be integrated after being sealed, sintered and solidified, and further the airtightness of the opening on the side wall of the tube shell is realized. After the sealing and sintering, the middle area of the bottom plate is machined for the second time, so that the flatness of the middle area is improved. And finally, fixing the collimating lens layer on one side of the upper cover assembly, which is far away from the bottom plate, through epoxy glue, so as to finish the assembly of the laser. Optionally, after the laser chip and the reflection prism are disposed in the middle area of the base plate, the collimating lens layer may be disposed on a side of the laser chip away from the base plate, and then the upper cover assembly is welded to the surface of the package away from the base plate.

It should be noted that the above-mentioned assembling process is only an exemplary process provided in the embodiment of the present application, the welding process adopted in each step may also be replaced by another process, and the sequence of each step may also be adapted to be adjusted, which is not limited in the embodiment of the present application.

In the above embodiments of the present invention, the base plate 101 and the case 102 are two separate structures that need to be assembled. Alternatively, base 101 and housing 102 may be integrally formed. So can avoid bottom plate and tube to produce the fold because the bottom plate that the thermal expansion coefficient of bottom plate and tube leads to is different when high temperature welding, and then can guarantee the flatness of bottom plate, guarantee laser instrument chip and reflection prism and set up the reliability on the bottom plate, and guarantee that the light that laser instrument chip sent is according to predetermined luminous angle outgoing, improve the luminous effect of laser instrument.

Fig. 12 is a schematic structural diagram of another laser according to another embodiment of the present application, fig. 13 is a schematic structural diagram of a laser according to yet another embodiment of the present application, fig. 12 is an exploded schematic structural diagram of the laser shown in fig. 13, and fig. 13 is a schematic structural diagram of a section b-b' in the laser shown in fig. 12. Fig. 12 and 13 show a laser in which a base plate 101 and a package 102 are integrally formed. As shown in fig. 12 and 13, the laser 10 may further include a ring-shaped bracket 109 welded to the side of the package 102 remote from the base 101. Alternatively, the surface of the cartridge 102 remote from the base plate 101 may be coated with a layer of kovar material (not shown) and the bracket 109 may be welded to the surface of the kovar material remote from the base plate 101.

Alternatively, the thermal conductivity of the base plate 101 and the package 102 is large, and thus heat generated by the laser chip 103 when emitting light can be dissipated through the base plate 101 relatively quickly. Illustratively, the material of the base 101 and the envelope 102 may comprise copper, such as copper oxide or copper oxide-free.

Optionally, the rigidity of the bracket 109 is higher, so that the rigidity of the whole laser can be increased, and the risk of damage to the laser can be reduced. Illustratively, the material of the support 109 includes one or more of stainless steel and kovar. Alternatively, the thickness of the holder 109 in the axial direction of the holder 109 ranges from 0.5 mm to 1.5 mm. For example, the thickness of the support 109 may be 0.5 mm or 1 mm.

It should be noted that the structure disposed on the side of the housing 102 away from the base plate 101 is made of kovar material or stainless steel, and may be, for example, the upper cover 106 or the support member 1073. Since the kovar material and the stainless steel cannot be welded to the copper material by the parallel sealing technique, that is, when the base plate 101 and the case 102 are integrally formed and the prepared material is copper, the upper cover 106 and the support member 1073 cannot be directly welded to the case 102 by the parallel sealing technique. The kovar material layer is plated on the surface of the pipe shell 102 far away from the bottom plate 101 in the embodiment of the application, the bracket 109 is welded on the surface of the kovar material layer far away from the bottom plate 101, the material of the bracket 109 comprises one or more of stainless steel and kovar material, and then the upper cover 106 or the supporting component 1073 can be welded on the surface of the bracket 109 far away from the bottom plate 101 by adopting a parallel sealing and welding technology, so that the effective fixation of the upper cover 106 and the supporting component 1073 on the pipe shell 102 is ensured.

In the embodiment of the present application, since the base plate 101 and the case 102 are integrally formed, the process steps of welding the case 102 to the base plate 101 can be reduced, thereby simplifying the manufacturing process of the laser and reducing the manufacturing cost of the laser. And the fold of the bottom plate 101 when the pipe shell 102 is welded on the bottom plate 101 is avoided, the influence of high-temperature welding on the flatness of the bottom plate is reduced, and the flatness of the bottom plate is higher.

Fig. 12 and 13 are only for describing a case where the package 102 and the base plate 101 are integrally formed, and do not limit other structures in the laser or the positional relationship between the other structures. For example, in fig. 12 and 13, the collimating lens layer 107 is located on the side of the sealing transparent layer 1052 away from the bottom plate 101, and the collimating lens structure 1071 and the carrying structure 1072 are integrally formed, the collimating lens layer 107 may be located between the upper cover 106 and the bottom plate 101, the collimating lens structure 1071 and the carrying structure 1072 may not be integrally formed, and the upper cover 106 may be any of the above-mentioned covers.

The laser provided by the embodiments of the present application is described below with respect to an exemplary set of parameters in the laser.

In the related art, the overall thickness of the laser is 10.9 mm, the distance between the top surface of the laser chip and the light-transmitting sealing layer is 2.42 mm, the distance between the top surface of the laser chip and the collimating lens layer is 4.1 mm, and the thickness of the bottom plate is 3.45 mm.

In the embodiment of the present application, the collimating lens layer is located on the side of the light-transmitting sealing layer far from the bottom plate. When the light-transmitting sealing layer is supported by the support frame in the shape of the Chinese character mu, the whole thickness of the laser can be 9.3 mm, the distance between the top surface of the laser chip and the light-transmitting sealing layer is greater than or equal to 1.72 mm, the distance between the top surface of the laser chip and the collimating lens layer can be 2.42 mm, and the thickness of the bottom plate can be 3.45 mm. Wherein, the distance of the top surface of laser chip apart from collimating lens layer specifically indicates: and after the light emitted by the laser chip irradiates the corresponding reflecting prism, the distance from the central point of the light spot formed on the reflecting prism to the bottom surface of the collimating lens. When the light-transmitting sealing layer is supported by the square supporting frame, the whole thickness of the laser can be 8.8 mm, the distance between the top surface of the laser chip and the light-transmitting sealing layer can be 0.92 mm, the distance between the top surface of the laser chip and the collimating lens layer can be 2.62 mm, and the thickness of the bottom plate can be 3.45 mm.

Therefore, the laser provided by the embodiment of the application has the advantages that the whole thickness is small, the distance between the laser chip and the collimating lens is small, and the thinning and the miniaturization of the laser are facilitated.

In the laser provided by the embodiment of the application, the laser comprises a plurality of rows and columns of laser chips. The distance between adjacent laser chips in the first direction may be 2-4 mm, for example, 3 mm, and the first direction may be a light emitting direction of the laser chips. In a second direction perpendicular to the first direction, the distance between adjacent laser chips may be in a range of 3 to 6 mm, for example, may be 4 mm. Therefore, the laser chips in the laser device can be arranged more compactly, and the arrangement density of the laser chips is higher.

Fig. 12 is a flowchart of a method for manufacturing a laser according to an embodiment of the present disclosure. As shown in fig. 12, the method may include:

step 101, providing an assembly structure of a base plate, a tube shell, a plurality of laser chips and at least one reflection prism, wherein the tube shell, the plurality of laser chips and the at least one reflection prism are all located on the base plate, the tube shell is annular and surrounds the plurality of laser chips and the at least one reflection prism, each reflection prism corresponds to one or more laser chips, and the reflection prism is located on the light outgoing side of the corresponding laser chip.

For example, a ring-shaped silver-copper solder may be placed on the base plate, then the package may be placed on the base plate with the ring-shaped bottom surface of the package covered with the silver-copper solder, and then the base plate carrying the package may be placed in a high-temperature furnace for sealing and sintering to weld the base plate and the package as a whole. Then, a plurality of laser chips and at least one reflection prism can be welded on the bottom plate in the area surrounded by the tube shell, and each reflection prism is positioned on the light emitting side of the corresponding laser chip, so that an assembly structure of the bottom plate, the tube shell, the plurality of laser chips and the at least one reflection prism is obtained.

Step 102, providing a light-transmitting sealing layer and a supporting frame, wherein the supporting frame comprises n first hollow-out areas, and n is a positive integer.

And 103, preparing an annular low-temperature glass solder structure.

For example, the low-temperature glass frit may be first placed in a mold having a desired shape (e.g., a ring shape) to be compacted, and then the structure of the compacted low-temperature glass frit may be placed in a low-temperature furnace to be sintered, thereby obtaining a low-temperature glass solder structure having a desired shape.

And 104, placing the light-transmitting sealing layer and the low-temperature glass solder structure on the supporting frame, and enabling the low-temperature glass solder structure to surround the light-transmitting sealing layer.

For example, the light-transmitting sealing layer may be first placed on the supporting frame, and the first hollow-out region in the supporting frame is covered, and then the low-temperature glass solder structure is placed, so that the annular low-temperature glass solder surrounds the light-transmitting sealing layer. Or, the low-temperature glass solder structure may be placed on the support frame, the second glass solder structure surrounds the first hollow area, and then the light-transmitting sealing layer is placed in the area surrounded by the low-temperature glass solder structure.

Optionally, for the support frame in the shape of the Chinese character 'mu', before the light-transmitting sealing layer is placed on the support frame, a pasting material may be further coated on the un-hollowed-out area between adjacent first hollowed-out areas in the support frame, so as to further improve the pasting strength between the support frame and the light-transmitting sealing layer. The adhesive material may include glass frit or epoxy sealant, etc. Optionally, the low-temperature glass solder structure in the embodiment of the present application may also be replaced by other sealing materials, such as epoxy sealant or other sealing glues, which is not limited in the embodiment of the present application.

And 105, sintering the low-temperature glass solder structure to weld the light-transmitting sealing layer and the supporting frame.

For example, a structure composed of the support frame, the light-transmitting sealing layer, and the low-temperature glass solder structure may be placed into a low-temperature furnace together for sintering, so that the low-temperature glass solder structure is melted and then fills a gap between an edge of the light-transmitting sealing layer and the support frame, and the edge of the light-transmitting sealing layer and the support frame are tightly attached through the low-temperature glass solder structure.

And 106, welding the support frame welded with the light-transmitting sealing layer on the upper cover to obtain an upper cover assembly.

For example, for the upper cover shown in fig. 6 and 7, the peripheral edge of the surface of the support frame away from the light transmissive sealing layer may be attached to the inside region of the recess in the upper cover to obtain the upper cover assembly. With the upper cover shown in fig. 8 and 9, the peripheral edge of the surface of the support frame to which the light-transmitting sealant layer is welded may be made to conform to an inside region of the upper cover that is convex with respect to an outside region to obtain the upper cover assembly.

And step 107, welding the upper cover assembly on one side of the pipe shell far away from the bottom plate.

For example, a parallel sealing technique may be used to weld the outer region of the upper cover to the surface of the tube shell far from the bottom plate, so that the light-transmitting sealing layer, the support frame, the upper cover, the tube shell and the bottom plate enclose a sealed space.

It should be noted that, for the upper cover shown in fig. 6 and 7, the upper cover may be welded to the tube shell, and then the support frame welded with the light-transmitting sealing layer may be welded to the upper cover, which is not limited in this embodiment of the present application. For the introduction of the upper cover assembly, please refer to the above laser embodiment, and for the structure and welding manner of other components in the laser, please refer to the above laser embodiment, which is not described herein again.

In summary, in the laser prepared by the method provided by the embodiment of the application, the light-transmitting sealing layer and the supporting frame are welded by the low-temperature glass solder, so that the sealing effect of the low-temperature glass solder is better, and the bonding effect of the light-transmitting sealing layer and the supporting frame is better. Therefore, the sealing performance of the accommodating space surrounded by the bottom plate, the tube shell, the upper cover, the supporting frame and the light-transmitting sealing layer is good, the laser chip in the laser can be prevented from being corroded by water and oxygen in the outside air, and the service life of the laser can be prolonged.

It should be noted that, the foregoing embodiments of the present application only illustrate several optional laser structures, and each component in the laser provided by the present application may be combined at will, so as to obtain lasers with different structures, and the present application does not limit the combination manner of each component. The components refer to a base plate, a tube shell, a support frame, a light-transmitting sealing layer, an upper cover, a collimating lens layer and the like in the laser.

Embodiments of the laser in the present application may be referred to with respect to embodiments of methods of fabricating lasers. The above description is only exemplary of the present application and should not be taken as limiting, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.

Claims

1. A laser, characterized in that the laser comprises:

a base plate;

a pipe shell;

the bottom plate and the pipe shell enclose a containing space,

the annular upper cover is fixed on the pipe shell;

2. The laser device according to claim 1, wherein the middle region of the support frame is recessed toward the base plate with respect to the peripheral edge of the support frame,

at least two steps are formed at the connecting position of the middle area of the supporting frame and the peripheral edge of the supporting frame on the side of the supporting frame far away from the bottom plate.

3. The laser according to claim 1 or 2, wherein an inner area of the surface of the upper cover adjacent to the base plate is planar,

the outer side area of the surface of the upper cover close to the bottom plate is attached to the surface of the pipe shell far away from the bottom plate, and the inner side area of the upper cover is attached to the surface of the support frame far away from the bottom plate.

4. A laser according to any one of claims 1 to 3, further comprising: the collimating lens layer is positioned in a closed accommodating space formed by the light-transmitting sealing layer, the supporting frame, the upper cover, the tube shell and the bottom plate;

the collimating lens layer is used for collimating the light rays reflected by the reflecting prism and then emitting the light rays to the n first hollow-out areas.

5. The laser of claim 4, wherein said envelope is annular, and wherein said envelope has a boss on an inner annular surface thereof, said collimating lens layer overlapping said boss.

6. The laser of claim 5, wherein said boss is annular and said boss is coaxial with said envelope.

7. The laser of any one of claims 1 to 6, further comprising a collimating lens layer, the collimating lens layer comprising:

an annular support member fixed to the case;

the periphery of the bearing structure is fixed on the supporting part, the middle area of the bearing structure is provided with a plurality of second hollowed-out areas, and one side, far away from the bottom plate, of each second hollowed-out area is covered with a collimating lens structure;

the collimating lens structure is used for collimating and emitting light rays emitted by at least one laser chip reflected by the reflecting prism.

8. The laser device according to claim 7, wherein the second hollow areas are in a shape of a strip, and the plurality of second hollow areas are sequentially arranged along a width direction of the second hollow areas.

9. The laser of claim 7 or 8, wherein the plurality of laser chips comprises a plurality of rows and a plurality of columns of the laser chips, and each of the collimating lens structures is configured to collimate light emitted from at least one row of the laser chips reflected by the reflecting prism.

10. The laser according to any one of claims 7 to 9, wherein the side of the collimating lens structure facing away from the base plate has a convex curved surface curved towards the side facing away from the base plate, and the radius of curvature of the convex curved surface is in the range of 1 mm to 4.5 mm.