CN112909731A - Laser device - Google Patents

Laser device Download PDF

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Publication number
CN112909731A
CN112909731A CN201911134470.6A CN201911134470A CN112909731A CN 112909731 A CN112909731 A CN 112909731A CN 201911134470 A CN201911134470 A CN 201911134470A CN 112909731 A CN112909731 A CN 112909731A
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CN
China
Prior art keywords
laser
bottom plate
collimating lens
light
base plate
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201911134470.6A
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Chinese (zh)
Inventor
田新团
李建军
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qingdao Hisense Laser Display Co Ltd
Original Assignee
Qingdao Hisense Laser Display Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qingdao Hisense Laser Display Co Ltd filed Critical Qingdao Hisense Laser Display Co Ltd
Priority to CN201911134470.6A priority Critical patent/CN112909731A/en
Publication of CN112909731A publication Critical patent/CN112909731A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4075Beam steering

Abstract

The application discloses laser belongs to the technical field of photoelectricity. The laser includes: a base plate; a pipe shell; the bottom plate and the tube shell enclose to form an accommodating space, the plurality of laser chips and the reflecting prism are positioned on the bottom plate, and the reflecting prism is used for emitting light rays emitted by the laser chips in a direction far away from the bottom plate; the annular upper cover is fixed on the surface of the pipe shell far away from the bottom plate; the supporting frame is fixed to the upper cover in the peripheral area, and the middle area of the supporting frame is provided with n first hollow areas; a light-transmitting sealing layer covers one side, far away from the bottom plate, of the first hollow-out area; the first hollow-out area is used for transmitting light rays emitted by at least one laser chip; a collimating lens structure is also arranged in a sealed space formed by the light-transmitting sealing layer, the supporting frame, the upper cover, the tube shell and the bottom plate; the collimating lens structure is used for collimating the light rays reflected by the reflecting prism and then emitting the light rays to the n first hollow areas. The application solves the problem that the size of the laser is large. The application is used for light emission.

Description

Laser device
Technical Field
The application relates to the field of photoelectric technology, in particular to a laser.
Background
With the development of the optoelectronic technology, the laser is widely used, and the requirements for miniaturization and thinning of the laser are higher and higher.
In the related art, a laser includes a base plate, a package, a plurality of laser chips, a plurality of reflection prisms, an upper cover, a support frame, a sealing glass layer, and a collimating lens layer. The tube shell, the plurality of laser chips and the plurality of reflecting prisms are all positioned on the bottom plate, and the tube shell is annular and surrounds the plurality of laser chips and the plurality of reflecting prisms; the plurality of laser chips correspond to the plurality of reflecting prisms one by one, each reflecting prism is positioned at the light-emitting side of the corresponding laser chip, and the reflecting prisms are used for reflecting the light rays emitted by the corresponding laser chips; the upper cover, the supporting frame, the sealing glass layer and the collimating lens layer are sequentially overlapped on one side, away from the bottom plate, of the laser chip along the direction away from the bottom plate.
Since the laser includes a large number of structures, the volume of the laser in the related art is large.
Disclosure of Invention
The application provides a laser, can solve the great problem of volume of laser. The technical scheme is as follows:
the laser includes:
a base plate;
a pipe shell;
the bottom plate and the pipe shell enclose a containing space,
in the accommodating space, a plurality of laser chips and a reflection prism are positioned on the bottom plate,
the reflecting prism is used for emitting the light rays emitted by the laser chip along the direction far away from the bottom plate;
the annular upper cover is fixed on the surface of the pipe shell, which is far away from the bottom plate;
the supporting frame is fixed to the upper cover at the edge of the periphery of the supporting frame, the middle area of the supporting frame is provided with n first hollow areas, and n is a positive integer;
a light-transmitting sealing layer covers one side, far away from the bottom plate, of the first hollow area;
the first hollow-out area is used for transmitting light rays emitted by at least one laser chip;
a collimating lens structure is further arranged in a sealed space formed by the light-transmitting sealing layer, the supporting frame, the upper cover, the tube shell and the bottom plate;
the collimating lens structure is used for collimating the light rays reflected by the reflecting prism and then emitting the light rays to the n first hollow areas.
The beneficial effect that technical scheme that this application provided brought includes at least:
in the laser that this application provided, collimating lens structure is located the confined space that printing opacity sealing layer, carriage, upper cover, tube and bottom plate formed, so collimating lens structure is less with the distance of laser chip. The light emitted by the laser chip is conical light and has a certain divergence angle, the closer the collimating lens structure is to the laser chip, the smaller the light spot formed when the light emitted by the laser chip irradiates the collimating lens structure. Therefore, the light mixing condition between the light rays emitted by the adjacent laser chips is weaker, the distance between the adjacent laser chips can be reduced, and the size of the laser can be smaller.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a laser provided in an embodiment of the present application;
fig. 2 is a schematic partial structural diagram of a laser provided in an embodiment of the present application;
FIG. 3 is a schematic diagram of a portion of another laser according to an embodiment of the present disclosure;
FIG. 4 is a schematic structural diagram of another laser provided in an embodiment of the present application;
fig. 5 is a schematic structural diagram of another laser provided in an embodiment of the present application;
FIG. 6 is a schematic diagram of a partial structure of another laser provided in an embodiment of the present application;
FIG. 7 is a schematic structural diagram of another laser provided in an embodiment of the present application;
FIG. 8 is a schematic diagram of a portion of another laser according to an embodiment of the present disclosure;
fig. 9 is a schematic diagram of a partial structure of a laser according to another embodiment of the present application;
fig. 10 is a schematic structural diagram of a laser according to another embodiment of the present application;
FIG. 11 is a schematic diagram of another laser structure provided in another embodiment of the present application;
FIG. 12 is a schematic view of a target axisymmetric pattern provided by another embodiment of the present application;
FIG. 13 is a schematic diagram of another laser according to another embodiment of the present application;
fig. 14 is a schematic structural diagram of another laser provided in another embodiment of the present application.
Detailed Description
To make the objects, technical solutions and advantages of the present application more clear, embodiments of the present application will be described in further detail below with reference to the accompanying drawings.
With the development of the optoelectronic technology, the application of the laser is wider and wider, for example, the laser can be applied to the aspects of welding process, cutting process, laser projection, etc., and the requirements for miniaturization, thinning and light emitting efficiency of the laser are higher and higher at present. The following embodiments of the present application provide a laser, which can make the laser have high light emitting efficiency and small volume.
Fig. 1 is a schematic structural diagram of a laser provided in an embodiment of the present application. As shown in fig. 1, the laser 10 includes: a base plate 101, a package 102, a plurality of laser chips 103, at least one reflective prism 104, an annular upper cover 106, a support frame 1052, a light transmissive encapsulant 1052, and a collimating lens structure 1071.
The package 102 and the bottom plate 101 form an accommodating space, the plurality of laser chips 103 and the at least one reflection prism 104 are both located on the bottom plate 101, the package 102 is annular and surrounds the plurality of laser chips 103 and the at least one reflection prism 104, and the upper cover 106 fixes the surface of the package 102 away from the bottom plate 101. The peripheral edge of the support frame 1051 is fixed to the upper cover 106, and the middle area of the support frame 1051 has n first hollow areas W, where n is a positive integer. The light-transmitting sealing layer 1052 covers a side of the n first hollow areas W away from the bottom plate 101. The collimating lens structure 1071 is located in the sealed space formed by the base plate 101, the envelope 102, the upper lid 106, the support frame 1051 and the light-transmissive seal 1052, i.e. the collimating lens structure 1071 is located between the base plate 101 and the support frame 1051.
In order to prevent the laser chip, the reflecting prism, and other structures from being corroded by water and oxygen in the outside air and ensure the service life of the laser, the laser chip, the reflecting prism, and other structures need to be arranged in a sealed space. In the embodiment of the present application, the bottom plate 101, the tube housing 102, the upper cover 106, the supporting frame 1051, and the light-permeable sealing layer 1052 may together form a sealed accommodating space.
Alternatively, the collimating lens structure 1071 may include: at least one collimating lens (not labeled in fig. 1). For example, fig. 1 illustrates that the collimating lens structure 1071 includes a plurality of collimating lenses, in which case the collimating lens structure 1071 may further include a carrier (not labeled in fig. 1) for carrying the plurality of collimating lenses.
The reflection prism 104 is configured to emit light emitted by the laser chip 103 in a direction away from the bottom plate 101, the collimating lens structure 1071 is configured to collimate the light reflected by the reflection prism 104 and emit the light to the n first hollow areas W, and the first hollow areas W are configured to transmit the light emitted by at least one laser chip 103. Illustratively, each reflection prism 104 in the laser 10 corresponds to one or more laser chips 103, each first hollow-out region W corresponds to one or more laser chips 103, the plurality of collimating lenses in the collimating lens structure 1071 correspond to all the laser chips 103 in the laser 10 one by one, and the reflection prism 104 is located at the light-emitting side of the corresponding laser chip 103. The reflection prism 104 is configured to reflect light emitted from the corresponding laser chip 103 to the collimating lens corresponding to the laser chip 103, and then the collimating lens collimates the light and emits the light to the first hollow area W corresponding to the laser chip 103, so that the first hollow area W can transmit the light emitted from the laser chip 103, and each first hollow area W is configured to transmit the light emitted from at least one laser chip 103. It should be noted that, collimating the light, that is, converging the light, makes the divergence angle of the light smaller, and is closer to the parallel light.
It should be noted that, in fig. 1, each of the reflection prisms 104 corresponds to one of the laser chips 103, that is, each of the reflection prisms 104 is used for emitting the light emitted from one of the laser chips 103 in a direction away from the base plate 101. It is illustrated that n is 4, that is, the middle area of the supporting frame 1051 has 4 first hollow areas W, and each first hollow area W corresponds to 5 laser chips 103, that is, each first hollow area W is used for transmitting light emitted by 5 laser chips. Optionally, there may also be a reflective prism 104 in the laser 10 corresponding to the plurality of laser chips 103; n may also be 1, 2 or 3 or even more, and each hollow area W may also correspond to 1, 2, 3 or 4 laser chips, which is not limited in this embodiment of the application.
In the laser 10 shown in fig. 1, the light emitted from each laser chip 103 may be emitted to the corresponding reflection prism 104, and reflected on the surface of the reflection prism 104 close to the laser chip 103, and further emitted to the corresponding collimating lens of the laser chip 103, and emitted to the corresponding first hollow area W of the laser chip 103 after passing through the collimating lens. In the laser 10 shown in fig. 1, each first hollow area W can transmit the light emitted from its corresponding 5 laser chips 105.
To sum up, in the laser provided in the embodiment of the present application, the collimating lens structure is located in the sealed space formed by the light-transmitting sealing layer, the supporting frame, the upper cover, the tube shell and the bottom plate, so that the distance between the collimating lens structure and the laser chip is small. The light emitted by the laser chip is conical light and has a certain divergence angle, the closer the collimating lens structure is to the laser chip, the smaller the light spot formed when the light emitted by the laser chip irradiates the collimating lens structure. Therefore, the light mixing condition between the light rays emitted by the adjacent laser chips is weaker, the distance between the adjacent laser chips can be reduced, and the size of the laser can be smaller.
In addition, the distance between the adjacent laser chips can be reduced, so that the laser chips can be more freely arranged, and the light-emitting requirements of lasers with different powers can be further met. Because the light spot that forms when the light that laser chip jetted out shoots at corresponding collimating lens is less, the facula of the parallel light beam that forms after the light direction was adjusted to collimating lens also can be less, and then can promote the collimation degree of the light that the laser instrument jetted out. Moreover, because the light spot formed on the collimating lens by the light rays emitted to the collimating lens is small, the area of the collimating lens can be small, and the whole volume of the collimating lens structure can be small.
Alternatively, the laser chip 103 may be disposed on the base plate 101 through a heat sink, which is not labeled in fig. 1. The heat sink may be made of a material having a large thermal conductivity, and the heat sink may allow heat generated when the laser chip 103 emits light to be more rapidly dissipated.
Alternatively, in a direction in which the collimating lens structure 1071 is away from the base plate 101, a distance between a surface of the collimating lens structure 1071 close to the base plate 101 and a surface of the laser chip 103 away from the base plate 101 may range from 1.5 mm to 5 mm. Illustratively, the distance may be 4.5 millimeters. Therefore, the distance between the laser chip and the collimating lens is smaller, and the thinning and the miniaturization of the laser are facilitated.
In the laser provided by the embodiment of the application, the laser comprises a plurality of rows and columns of laser chips. The distance between adjacent laser chips in the first direction may be 2-4 mm, for example, 3 mm, and the first direction may be a light emitting direction of the laser chips. In a second direction perpendicular to the first direction, the distance between adjacent laser chips may be in a range of 3 to 6 mm, for example, may be 4 mm. Therefore, the laser chips in the laser device can be arranged more compactly, and the arrangement density of the laser chips is higher.
The support frame 1051 in the laser 10 is described below:
optionally, in this embodiment, the material of the support frame 1051 may be kovar, such as iron-nickel-cobalt alloy, stainless steel, or other alloys. The light-transmitting sealing layer 1052 may be made of sealing glass, or may be made of other light-transmitting and highly reliable materials, such as a resin material, which is not limited in this embodiment of the present application.
Optionally, the first hollowed-out area in the supporting frame may correspond to at least two laser chips, and at this time, the area that is not hollowed out in the supporting frame is small, so that light emitted by the laser chips and lost due to being blocked by the supporting frame is reduced, the light emitted by the laser chips is utilized more, and the light-emitting brightness and the light-emitting effect of the laser are improved.
Optionally, with reference to fig. 1, the first hollow-out areas W in the supporting frame 1051 may be in a shape of a strip, and the n first hollow-out areas W may be sequentially arranged along the width direction of the first hollow-out areas W. The support frame 1051 having such a structure can be called a herringbone support frame. For example, the width direction may be an x direction shown in fig. 1, and the extending direction of each first hollow area W is a y direction perpendicular to the x direction.
It should be noted that in the supporting frame 1051 shaped like a Chinese character 'mu', the un-hollowed-out region between the adjacent first hollowed-out regions W can support the light-transmitting sealant 1052 thereon, so as to prevent the middle portion of the light-transmitting sealant 1052 from collapsing, ensure the firmness of the light-transmitting sealant 1052, and further ensure the sealing effect of the accommodating space surrounded by the bottom plate 101, the tube shell 102, the upper cover 106, the supporting frame 1051 and the light-transmitting sealant 1052.
Alternatively, with continued reference to fig. 1, the plurality of laser chips 103 in the laser 10 may include a plurality of rows and a plurality of columns of laser chips 103, that is, the plurality of laser chips 103 may be arranged in a plurality of rows and a plurality of columns. For example, the x direction in fig. 1 may be a column direction of the rows and columns of laser chips 103, and the y direction may be a row direction of the rows and columns of laser chips 103. Each of the first hollow areas W in the supporting frame 1051 may correspond to at least one row of the laser chips 103, that is, each of the first hollow areas W may be used for transmitting light emitted from at least one row of the laser chips 103.
It should be noted that, in fig. 1, each first hollow area W corresponds to only one row of laser chips for transmitting the light emitted from the row of laser chips 103. Optionally, the first hollow-out region W may also exist in the support frame 1051, and may correspond to two rows or three rows of laser chips, or each first hollow-out region W in the support frame 1051 may also correspond to two rows or three rows of laser chips, which is not limited in this embodiment of the application.
Fig. 2 is a schematic partial structural diagram of a laser according to an embodiment of the present disclosure. As shown in fig. 2, n is 1, that is, the middle region of the support frame 1051 has only one first hollow region W. The first hollow area W may correspond to all the laser chips 103 in the laser 10, and the light emitted from each laser chip 103 may be emitted through the first hollow area W after being reflected by the corresponding reflection prism 104. The support frame 1051 having such a structure can be called a square-shaped support frame.
It should be noted that there is no portion shielding the light emitted from the laser chip 103 in the square supporting frame, and the light emitted from the laser chip 103 can be fully utilized, so as to further improve the brightness of the light emitted from the laser and improve the light emitting effect of the laser.
It should be further noted that in the embodiment of the present application, the shielding of the light emitted from the laser chip by the non-hollowed-out region in the supporting frame can be considered less, so that the setting density of the laser chip in the laser device is higher, the size of the laser device can be reduced, and the miniaturization of the laser device is facilitated. Compared with lasers with the same volume in the related art, as more laser chips can be arranged in the laser provided in the embodiment of the application, the laser can emit more light rays, and the light rays emitted by the laser have higher brightness and stronger intensity.
In addition, in the embodiment of the application, since only a small number of hollow areas need to be arranged on the supporting frame, the flatness of the surface of the supporting frame away from the bottom plate can be ensured, and the flatness can be smaller than 0.3 mm. Further, the inclination angle when the light-transmitting sealing layer is provided on the support frame is small, and may be, for example, less than or equal to 0.5 degrees. Because the inclination angle of the light-transmitting sealing layer is smaller, the optical path of light emitted by the laser chip in the light-transmitting sealing layer can be reduced, the absorption of the light-transmitting sealing layer to the light is reduced, and the utilization rate of the light is improved.
Optionally, a brightness enhancement film may be attached to at least one of the surface of the light transmissive sealing layer 1052 close to the bottom plate 101 and the surface far from the bottom plate 101 to improve the light output brightness of the laser.
Fig. 3 is a partial structural schematic view of another laser provided in an embodiment of the present application, fig. 3 is a schematic view of a section b-b ' in the structure shown in fig. 2, and fig. 2 only illustrates a position of the section b-b ' in the support frame 1051, and does not illustrate a position of the section b-b ' in other structures. It should be noted that fig. 3 may also be a schematic view of a section b-b 'of the support frame 1051 and the light transmissive sealing layer 1052 in fig. 1, that is, a schematic view of a section b-b' in the support frame structure in a herringbone shape may also be as shown in fig. 3.
Fig. 4 is a schematic structural diagram of another laser provided in the embodiment of the present application, and fig. 5 is a schematic structural diagram of another laser provided in the embodiment of the present application. Fig. 4 is an exploded view of the laser shown in fig. 5, fig. 5 is a view of a section b-b ' of the laser shown in fig. 4, and fig. 5 only illustrates the location of the section b-b ' in the base plate 101 and the package 102, and does not illustrate the location of the section b-b ' in other structures of the laser 10. Fig. 4 and 5 illustrate an example in which the support frame 1051 of the laser 10 is in a mesh shape.
As shown in any one of fig. 2 to 5, the peripheral edge of the light-transmissive sealing layer 1052 may be soldered to the surface of the support frame 1051 away from the bottom plate 101 by a low-temperature glass solder H. For example, the low-temperature glass solder H may be enclosed in a ring shape and enclose the light-transmissive sealing layer 1052, so that the side surface of the light-transmissive sealing layer 1052 is soldered to the surface of the support frame 1051 away from the bottom plate 101.
It should be noted that the light-transmissive sealing layer 1052 may be a plate-shaped structure, and the light-transmissive sealing layer 1052 has two larger surfaces and a plurality of smaller surfaces, wherein the plurality of smaller surfaces are a plurality of sides of the light-transmissive sealing layer 1052. Alternatively, the two larger surfaces may be parallel. Alternatively, the two larger surfaces may be parallel to the plane of the base plate 101.
Referring to fig. 2 and 3, the middle region of the supporting frame 1051 is recessed toward the bottom plate 101 relative to the peripheral edge of the supporting frame 1051. When the support frame 1051 is square, that is, annular, the middle region of the support frame 1051 refers to the inner region of the support frame 1051, and the peripheral edge of the support frame 1051 refers to the outer region of the support frame 1051. At least two steps J1 are formed at the connection position of the middle area of the support frame 1051 and the peripheral edge of the support frame 1051 at the side of the support frame 1051 far away from the bottom plate 101, that is, the connection position has at least two steps J1. It should be noted that fig. 2 and fig. 3 both illustrate that the connection has three steps J1, and optionally, the number of the steps J1 may also be 4, 5, or even more. Optionally, the number of the steps may also be less than 3, for example, the number of the steps may also be 2 or 1.
In the embodiment of the present application, because the supporting frame 1051 is away from the bottom plate 101, and the step J1 exists at the joint between the middle region of the supporting frame 1051 and the peripheral edge of the supporting frame 1051, the contact area between the low-temperature glass solder H and the surface of the supporting frame 1051 away from the bottom plate 101 is relatively large, so that the adhesion firmness between the light-transmitting sealing layer 1052 and the supporting frame 1051 can be improved, and the sealing effect of the accommodating space in the laser device can be further improved.
In the embodiment of the present application, the material of the low-temperature glass solder H includes low-temperature glass, that is, low-melting glass. Optionally, the low temperature glass has a melting temperature of less than 450 degrees, which may be 400 degrees. Alternatively, the low temperature glass may be a lead-free low melting point glass; the low-temperature glass can be D40. Optionally, the low-temperature glass may also be a lead-containing low-melting-point glass, which is not limited in the embodiments of the present application. In the present embodiment, the unit "degree" used to indicate the temperature is all referred to as "degree centigrade".
When the support frame 1051 and the light-transmitting sealing layer 1052 are welded by using the low-temperature glass solder H, the low-temperature glass powder may be first placed in a mold with a desired shape (such as a ring shape) to be compacted, and then the structure composed of the compacted low-temperature glass powder is placed in a low-temperature furnace to be sintered, so as to obtain the low-temperature glass solder H with a desired shape. In the embodiment of the present application, after the annular low-temperature glass solder H is obtained, the low-temperature glass solder H may be placed on the support frame 1051 and surround the light-transmitting sealing layer 1052. Further, the structure composed of the support frame 1051, the translucent sealing layer 1052, and the low-temperature glass solder H is collectively placed in a low-temperature furnace and sintered, so that the low-temperature glass solder H melts and fills the gap between the edge of the translucent sealing layer 1052 and the support frame 1051, thereby welding the support frame 1051 and the translucent sealing layer 1052. The edge of the light-transmitting sealing layer 1052 and the supporting frame 1051 can be tightly attached by low-temperature glass solder H, so that the tightness of the accommodating space enclosed by the bottom plate 101, the tube shell 102, the upper cover 106, the supporting frame 1051 and the light-transmitting sealing layer 1052 is ensured.
In the embodiment of the application, the low-temperature glass solder H surrounds the light-transmitting sealing layer 1052 during welding, and can also limit the light-transmitting sealing layer 1052, so that the light-transmitting sealing layer 1052 is prevented from being displaced during welding with the supporting frame 1051, and the welding precision of the light-transmitting sealing layer 1052 is ensured. It should be noted that the melting point of the brightness enhancement film attached to the surface of the light-transmissive sealing layer 1052 is usually higher than 450 ℃, and the low-temperature glass solder is used to solder the light-transmissive sealing layer 1052 to avoid damage to the brightness enhancement film.
Optionally, for the support frame 1051 in the shape of the Chinese character 'mu', before the light-transmitting sealing layer 1052 is placed on the support frame 1051, an adhesive material may be further coated on the un-hollowed-out area between the adjacent first hollowed-out areas W in the middle area of the support frame 1051, so as to further improve the adhesive strength between the support frame 1051 and the light-transmitting sealing layer 1052. The un-hollowed-out areas between adjacent first hollowed-out areas W may be referred to as support crossbars, and the adhesive material may include glass adhesive or epoxy sealant. Optionally, the low-temperature glass solder in the embodiment of the present application may also be replaced by other sealing materials, such as epoxy sealant or other sealing glues, which is not limited in the embodiment of the present application.
It should be noted that, in the related art, the support frame has a plurality of small grid-shaped panes, and a separate small glass needs to be correspondingly adhered to each small pane, so that the adhering process is complex, the adhering efficiency is low, and the adhering effect is difficult to control. In the embodiment of the application, the bonding is only carried out at the peripheral edge of the supporting frame and the position of the supporting transverse bar, or the bonding is only carried out at the peripheral edge of the supporting frame, so that the bonding process is simplified, the bonding efficiency is improved, and the bonding effect is easier to control. Adopt low temperature glass solder to seal support frame 1051 and printing opacity sealing layer 1052 in this application embodiment, this sealed effect is better, can improve the gas tightness of laser instrument, further prolongs the life of laser instrument.
In the embodiment of the present application, the upper cover 106 is used for carrying the support frame 1051. The upper cover 106 may be a square frame with an inner area recessed toward the bottom plate, and the thickness of each position of the upper cover 106 is the same, such as 0.2 mm. Alternatively, the thickness may also be less than 0.15 mm, such as 0.12 mm. The upper cover 106 may be formed by a stamping process using an annular plate-like structure.
For example, the light-transmissive sealing layer 1052 may be welded to the supporting frame 1051, and then the combined structure of the supporting frame 1051 and the light-transmissive sealing layer 1052 may be placed in the inner region of the recess of the upper cover 106, and the combined structure and the upper cover 106 may be welded by using a sealing material. The combined structure and the upper cover 106 are welded to obtain a structure called an upper cover assembly, and in this case, the base plate 101, the case 102 and the upper cover assembly may together enclose a sealed space. Optionally, in this embodiment of the application, the supporting frame 1051 may be welded to the upper cover 106, and then the light-transmitting sealing layer 1052 is welded to the supporting frame 1051, so as to obtain the upper cover assembly.
Optionally, the sealing material here may also be a low-temperature glass solder, and the process of soldering with the low-temperature glass solder may refer to the above-mentioned soldering process for the support frame 1051 and the light-transmitting sealing layer 1052, which is not described herein again in this embodiment of the present application. Optionally, the sealing material may also be an epoxy glue seal, a silver-tin solder, or the like, which is not limited in this embodiment.
Fig. 6 is a partial structural schematic view of another laser provided in an embodiment of the present application, fig. 7 is a structural schematic view of another laser provided in an embodiment of the present application, and fig. 6 shows only an upper cover assembly in the laser, that is, the upper cover 106, the support frame 1051, and the light-transmissive sealing layer 1052 in the laser. Fig. 7 shows a laser including the structure shown in fig. 6, and fig. 6 is an exploded view of the laser shown in fig. 7 after the upper cover assembly is turned over by 180 degrees. Referring to fig. 6 and 7, the upper cover 106 is ring-shaped, the inner area q2 of the surface of the upper cover 106 close to the bottom plate 101 is plane, the outer area q1 of the surface of the upper cover 106 close to the bottom plate 101 is attached to the surface of the case 102 away from the bottom plate 101, and the inner area q2 is attached to the surface of the support frame 1051 away from the bottom plate 101. Optionally, the lateral region q1 is recessed relative to the medial region q 2. Optionally, the surface of the upper cover 106 away from the bottom plate 101 is planar.
In fig. 6, a support frame 1051 in a mesh-like shape is shown as an example, and the support frame 1051 may be a square-like support frame as described above.
Alternatively, the upper cover 106 shown in fig. 6 may be obtained by etching the outer region on one surface of the annular plate-like structure, and the thickness of the annular plate-like structure may be the same as that of the portion of the upper cover where the inner region q2 is located. Optionally, the thickness of the portion of the upper cover 106 where the outer region q1 is located may be less than or equal to 0.15 mm, for example, the thickness may be 0.12 mm, and the thickness of the portion of the upper cover 106 where the inner region q2 is located may range from 0.2 mm to 0.5 mm, for example, the thickness may be 0.4 mm.
In forming the upper cover 106 shown in fig. 6, the inner region q2 on the surface of the upper cover 106 close to the bottom plate 101 does not need to be processed, and therefore the flatness of the inner region q2 is high. And then the laminating degree of difficulty of carriage 1051 and this inboard region q2 is lower, and the laminating effect can be better, can further improve the sealed effect of upper cover subassembly.
Alternatively, after the upper cover 106 is manufactured, the peripheral edge of the support frame 1051 may be welded to the inside region q2 in the upper cover 106, and then the light transmissive sealing layer 1052 may be placed on the support frame 1051 from the side of the upper cover 106 away from the support frame 1051, and then the light transmissive sealing layer 1052 may be welded to the support frame 1051 to obtain the upper cover assembly. The outer area of the surface of cover 106 adjacent to base 101 may then be welded to the surface of housing 102 remote from base 101.
Alternatively, the inner region q2 and the surface of the support frame 1051 away from the base plate 101 may be bonded by a sealing material, and the outer region q1 and the surface of the package 102 away from the base plate 101 may be bonded by a parallel sealing process. The sealing material may be any of the sealing materials described above.
In the embodiment of the present invention, the upper cover 106 and the support frame 1051 are illustrated as two separate structures, and optionally, the upper cover 106 and the support frame 1051 may be integrally formed. For example, a plate-shaped structure may be etched, so as to obtain the integrated upper cover 106 and the supporting frame 1051.
The collimating lens structure 1071 in the laser 10 is described below.
It should be noted that, in the embodiment of the present application, a side of the collimating lens structure 1071 away from the bottom plate 101 may have at least one convex arc surface bending toward the side away from the bottom plate 101, and a portion of each convex arc surface in the collimating lens structure 1071 may be regarded as a collimating lens, and then the collimating lens structure 1071 may include at least one collimating lens. The collimating lens can be the convex lens of plano-convex form, and collimating lens can have a convex cambered surface and a plane, and this plane can be on a parallel with the face of bottom plate 101, and is close to bottom plate 101 and sets up, and this convex cambered surface and plane can be two relative faces. The side of the collimating lens structure 1071 facing away from the base plate 101 may have each convex curve as in a collimating lens.
There are many alternative arrangements of the collimating lens structure in the laser, and two of them are explained as follows:
in a first arrangement of the collimating lens structure, please refer to fig. 4, 5 and 7, the laser 10 only includes one collimating lens structure 1071, the collimating lens structure 1071 includes a plurality of collimating lenses a and a carrying member Z carrying the collimating lenses a, the collimating lenses a are located on one side of the carrying member Z away from the bottom plate 101, and the carrying member Z may be made of a transparent material. Alternatively, the plurality of collimator lenses a may be integrally formed with the carrier Z. Illustratively, the collimating lens structure 1071 may be prepared by means of mold pressing.
In the embodiment of the present application, the inner annular surface of the tube shell 102 has a boss T, and the collimating lens structure 1071 is overlapped on the boss T. Alternatively, referring to fig. 4, 5 and 7, the inner annular surface of the shell 102 may have only one boss T, which may be annular, which may be coaxial with the shell 102. The orthographic projection of this boss T on the base plate 101 may surround the laser chip 103 and the reflection prism 104 on the base plate 101. Optionally, the inner annular surface of the tube shell may also have a plurality of bosses, and the plurality of bosses may be at least distributed on two opposite surfaces of the inner annular surface of the tube shell to at least align with two opposite side edges of the straight lens structure for supporting, which is not illustrated in this embodiment of the application.
In a second arrangement of the collimating lens structure, please refer to the schematic diagrams of fig. 8 to 11, wherein fig. 8 is a schematic partial structure diagram of another laser provided in the embodiment of the present application; fig. 9 is a schematic diagram of a partial structure of a laser according to another embodiment of the present application; fig. 10 is a schematic structural diagram of a laser according to another embodiment of the present application, fig. 10 is an exploded structural diagram of the laser shown in fig. 11, fig. 11 is a schematic diagram of a section b-b' of the laser shown in fig. 10, and fig. 10 and 11 both include the structure shown in fig. 8.
Referring to fig. 8 to 11, the laser 10 may include: an annular support member 1073, a carrier structure 1072, and a plurality of collimating lens structures 1071. The supporting part 1073 is fixed on the case 102, the peripheral edge of the carrying structure 1072 can be fixed on the supporting part 1073, the middle area of the carrying structure 1072 has a plurality of second hollow areas K, and the plurality of collimating lens structures 1071 are covered on one side of the plurality of second hollow areas K away from the bottom plate 101 in a one-to-one correspondence manner. The collimating lens structure 1071 is used for collimating and emitting the light emitted from the at least one laser chip 103 reflected by the reflecting prism 104.
It should be noted that fig. 8 illustrates an example in which each collimating lens structure 1071 includes a collimating lens (not labeled in fig. 8). Alternatively, as shown in fig. 9, one collimating lens structure 1071 may include a plurality of collimating lenses a, in which case, the collimating lens structure 1071 may further include a carrier Z carrying the plurality of collimating lenses a. Alternatively, the plurality of collimator lenses a may be connected to each other as an integral structure (this is not illustrated in the embodiments of the present application). For example, the second hollow-out regions K in the carrying structure 1072 in fig. 9 may be in a shape of a bar, and the plurality of second hollow-out regions K in the carrying structure 1072 may be sequentially arranged along a width direction of the second hollow-out regions K. At this time, each of the collimating lens structures 1071 covering the second hollowed-out area K may include a plurality of collimating lenses a.
Alternatively, the plurality of laser chips 103 in the laser 10 may include a plurality of rows and a plurality of columns of laser chips 103, and each collimating lens structure may correspond to at least one row of laser chips 103. That is, each collimating lens structure 1071 may be configured to collimate light emitted from at least one row of laser chips 103 reflected by the reflecting prism 104.
Alternatively, the second hollow-out region K may be rectangular, oval or in a target axisymmetric shape shown in fig. 12, the target axisymmetric shape is surrounded by two opposite straight sides and two opposite arc sides, and the target axisymmetric shape is a convex figure. The target axis symmetry shape may be a racetrack shape. Fig. 8 and 10 illustrate the second hollow area K as a rectangle. For example, the length of the rectangle may be 5 mm, the width may be 3 mm, and the length and the width of the rectangle may also be other values, which is not limited in this embodiment of the application. It should be noted that the shape of the second hollow-out area K may be designed according to the light type of the light emitted by the laser chip 103 after being reflected by the corresponding reflection prism 104, and it is only necessary to ensure that the light emitted by the laser chip 103 can be reflected by the corresponding reflection prism 104 and then can penetrate through the second hollow-out area K.
Optionally, the shape of the collimating lens structure 1071 corresponds to the shape of the second hollowed-out area K it covers. For example, the bottom surface of the collimating lens structure 1071 may have the same shape as the second hollow area K covered therewith. In the embodiment of the present application, when the collimating lens structure 1071 includes only one collimating lens, the collimating lens structure 1071 can be obtained by performing a trimming process on an existing circular lens. When the bottom surface of the collimating lens structure 1071 is rectangular, it can be obtained by cutting off four edges of a circular lens; when the bottom surface of the collimating lens structure 1071 has a shape that is axisymmetric to the target, it can be obtained by cutting off opposite edges of a circular lens.
Alternatively, in the above-mentioned second arrangement manner of the collimating lens structures, each collimating lens structure 1071 may be independently arranged above the second hollow-out area K to be covered by the collimating lens structure 1071. For the structure shown in fig. 8, each collimating lens structure 1071 may be independently disposed on one second hollowed-out region K. Therefore, when the collimator lens structure 1071 is provided, the position of the collimator lens structure 1071 can be adjusted according to the light beam emitted from the laser chip 103 corresponding to the collimator lens structure 1071. The setting position of the collimating lens structure 1071 can be adjusted, so that the light rays emitted from the laser chip 103 at the central position pass through the vertex of the collimating lens in the collimating lens structure 1071, the collimating effect of the collimating lens structure 1071 on the light beams is better, and the parallelism of the emergent light rays is better.
Alternatively, in the second arrangement of the collimating lens structures, each collimating lens structure 1071 may be welded to the carrier structure 1072 by a sealing material, and then the carrier structure 1072 with the collimating lens structures welded thereto may be placed in an inner area of the recess of the support member 1073, and the carrier structure 1072 and the support member 1073 may be welded by the sealing material. Optionally, in this embodiment of the application, the carrying structure 107 may be welded to the supporting member 1073, and then the collimating lens structure 1071 and the carrying structure 1072 may be welded.
In the present embodiment, the support member 1073 may be fixed to a boss T (shown in fig. 11) provided on the inner circumferential surface of the case 102. It should be noted that the structure of the supporting member 1073 may be the same as that of the upper cover 106, and for the supporting member 1073, refer to the above description of the upper cover 106; when the second hollow area K in the carrying structure 1072 is used for transmitting the light emitted from the plurality of laser chips, the carrying structure 1072 and the support frame 1051 may have the same structure, and the description of the carrying structure 1072 may refer to the description of the support frame 1051; for the assembling or welding manner of the carrying structure 1072 and the supporting component 1073, reference may be made to the above-mentioned description of the assembling or welding manner of the supporting frame 1051 and the upper cover 106, and no further description is given in this embodiment of the present application.
It should be noted that, in the embodiment of the present application, the collimating lens structure 1071 is located between the light-transmitting sealing layer 1052 and the laser chip 103, so that the distance between the collimating lens structure 1071 and the laser chip 103 can be reduced, the curvature of the collimating lens can also be reduced correspondingly, and the curvature of the collimating lens is the curvature of the convex arc surface that the collimating lens has. Alternatively, the curvature radius of the collimating lens (i.e. the curvature radius of the convex cambered surface in the collimating lens) may range from 1 mm to 4.5 mm.
The following description is made of the base plate 101 in the laser 10:
with continued reference to fig. 4, 5, 7, 10, and 11, the laser 10 may further include: a conductive pin 108 penetrating through a sidewall of the package 102, an orthographic projection of the package 102 and the conductive pin 108 on the bottom plate 101 may be located at a peripheral edge Q2 of the bottom plate 101, and an orthographic projection of the laser chip 103 and the reflective prism on the bottom plate 101 is located in a middle area C of the bottom plate 101; the peripheral edge Q2 of base plate 101 is recessed with respect to the central region C of base plate 101 toward the side away from package 102. In the embodiment of the present application, the orthographic projections of the conductive pins 108 on the bottom plate 101 are all located outside the middle area C of the bottom plate 101.
It should be noted that the conductive pin is electrically connected to an electrode of the laser chip to transmit an external power to the laser chip, so as to excite the laser chip to emit light.
Optionally, at least one step J2 is formed at the connection between the peripheral edge Q2 of the bottom plate 101 and the middle area C of the bottom plate 101 at the side of the bottom plate 101 close to the case 102, that is, the connection has at least one step J2. At least a partial orthographic projection of conductive lead 108 on base 101 is located on step J2, e.g., an orthographic projection of one of the two ends of conductive lead 108 extending into package 102 on base 101 is located on step J2.
Optionally, laser 10 includes a plurality of conductive leads 108, the plurality of conductive leads 108 being located on opposite sides of the central region C of base 101, and the junction of the peripheral edge Q2 of base 101 and the central region C of base 101 on the side of base 101 proximate package 102 having a plurality of steps J2 located on the opposite sides. Illustratively, the opposite sides are both sides of the middle area C of the bottom plate 101 in the y direction.
Fig. 4, 5, 7, 10, and 11 illustrate an example in which the connection between the peripheral edge Q2 of the bottom plate 101 and the middle region C of the bottom plate 101 on the side of the bottom plate 101 close to the case 102 has only two steps J2 located on opposite sides of the middle region C.
Alternatively, the material of the bottom plate 101 may be a conductive material. For example, the material of the base plate may include copper or aluminum. The chassis 101 allows heat generated from the laser chip 103 when emitting light to be more quickly dissipated to prevent damage to the laser chip 103 by the heat.
It should be noted that, in the embodiment of the present application, the peripheral edge Q2 of the bottom plate 101 where the orthographic projection of the conductive pin 108 on the bottom plate 101 is located is recessed towards the side away from the package 102 relative to the middle area C of the bottom plate 101, so that the situation that the conductive pin 108 is contacted with the bottom plate 101 to affect the conductive performance of the conductive pin is avoided, and the normal power supply to the laser chip is ensured. In addition, the connecting part of the peripheral edge of the bottom plate and the middle area of the bottom plate is provided with steps, so that the strength of the bottom plate can be ensured on the premise of ensuring the conductivity of the conductive pins.
In the embodiment of the application, the machining process is performed on the bottom plate twice, and then the preparation of the bottom plate is completed. Three platforms with different heights are formed in the first machining process, and the heights of the three platforms are sequentially from high to low, namely a middle area of the bottom plate, a step at the joint of the peripheral edge of the bottom plate and the middle area, and the peripheral edge of the bottom plate. At this time, the thickness of the middle region of the base plate is higher than that of the prepared base plate. And after the pipe shell is welded on the bottom plate, a milling cutter is adopted to perform secondary machining on the middle area of the bottom plate so as to finish the preparation of the bottom plate. For example, after the first machining process, the height difference between the step in the bottom plate and the peripheral edge of the bottom plate may be 0.13 mm, the height difference between the middle region of the bottom plate and the step may be 0.4 mm, and the height difference between the middle region of the finished bottom plate and the step may be 0.2 mm. It should be noted that the above-mentioned height difference is only an example, alternatively, the height difference between the step in the bottom plate and the peripheral edge of the bottom plate may have other values, and the height difference between the middle area of the bottom plate and the step may also have other values, such as 0.12 mm, 0.15 mm, or 0.3 mm.
Because the pipe shell and the bottom plate can be heated in the process of welding the pipe shell on the bottom plate, the high-temperature expansion coefficients of the pipe shell and the bottom plate are different generally, and the stresses in the pipe shell and the bottom plate can be pulled mutually, so that the middle area of the bottom plate is deformed. And then, the middle area of the bottom plate is machined for the second time, so that the middle area of the bottom plate becomes relatively flat, the accuracy and the reliability of the pasting position of the laser chip and the reflecting prism in the middle area of the bottom plate are further ensured, and the light collimation degree emitted by the laser is improved. Illustratively, the flatness of the middle region of the base plate in the embodiments of the present application may be less than 0.02 mm.
In addition, because the orthographic projection of the conductive pin on the bottom plate is positioned outside the middle area of the bottom plate in the embodiment of the application, the area of the middle area of the bottom plate is smaller, the flatness of the middle area of the bottom plate can be ensured more easily, and the middle area of the bottom plate can be flatter.
Optionally, the side wall of the package 102 has an opening, for example, the opening may have an aperture of 1.2 mm, and the conductive pin 108 may extend through the opening into the package 102. Alternatively, the diameter of the conductive pin 108 may be 0.55 millimeters; the shell 102 may be made of kovar.
In the embodiment of the present application, when assembling the laser, a ring-shaped solder structure (e.g., a ring-shaped glass bead) may be first placed in the opening on the sidewall of the package, and the conductive pin may be inserted through the solder structure and the opening where the solder structure is located. Then, the package is placed on the periphery of the base plate, annular silver-copper solder is placed between the base plate and the package, and then the base plate, the package and the structure of the conductive pins are placed in a high-temperature furnace for sealing and sintering. Because the glass can have the same physical new energy with kovar materials at the temperature of more than 800 ℃, the glass beads and the tube shell can be integrated after being sealed, sintered and solidified, and further the airtightness of the opening on the side wall of the tube shell is realized. After the sealing and sintering, the middle area of the bottom plate is machined for the second time, so that the flatness of the middle area is improved. Then, the laser chip and the reflection prism are arranged in the middle area of the bottom plate, the collimating lens structure (or the supporting component bearing the bearing structure and the collimating lens structure) is welded on a boss on the inner wall of the tube shell, and then the upper cover component is welded on the surface of the tube shell far away from the bottom plate by adopting a parallel sealing and welding technology, so that the laser is assembled.
It should be noted that the above-mentioned assembling process is only an exemplary process provided in the embodiment of the present application, the welding process adopted in each step may also be replaced by another process, and the sequence of each step may also be adapted to be adjusted, which is not limited in the embodiment of the present application.
In the above embodiments of the present invention, the base plate 101 and the case 102 are two separate structures that need to be assembled. Alternatively, base 101 and housing 102 may be integrally formed. So can avoid bottom plate and tube to produce the fold because the bottom plate that the thermal expansion coefficient of bottom plate and tube leads to is different when high temperature welding, and then can guarantee the flatness of bottom plate, guarantee laser instrument chip and reflection prism and set up the reliability on the bottom plate, and guarantee that the light that laser instrument chip sent is according to predetermined luminous angle outgoing, improve the luminous effect of laser instrument.
Fig. 13 is a schematic structural diagram of another laser provided in another embodiment of the present application, fig. 14 is a schematic structural diagram of another laser provided in another embodiment of the present application, fig. 13 is an exploded schematic structural diagram of the laser shown in fig. 14, and fig. 14 is a schematic diagram of a section b-b' in the laser shown in fig. 13. Fig. 13 is a view showing a laser device shown in fig. 14 in which a base plate 101 and a package 102 are integrally formed. As shown in fig. 13 and 14, the laser 10 may further include a ring-shaped bracket 109 welded to the side of the package 102 remote from the base 101. Alternatively, the surface of the cartridge 102 remote from the base plate 101 may be coated with a layer of kovar material (not shown) and the bracket 109 may be welded to the surface of the kovar material remote from the base plate 101.
Alternatively, the thermal conductivity of the base plate 101 and the package 102 is large, and thus heat generated by the laser chip 103 when emitting light can be dissipated through the base plate 101 relatively quickly. Illustratively, the material of the base 101 and the envelope 102 may comprise copper, such as copper oxide or copper oxide-free.
Optionally, the rigidity of the bracket 109 is higher, so that the rigidity of the whole laser can be increased, and the risk of damage to the laser can be reduced. Illustratively, the material of the support 109 includes one or more of stainless steel and kovar. Alternatively, the thickness of the holder 109 in the axial direction of the holder 109 ranges from 0.5 mm to 1.5 mm. For example, the thickness of the support 109 may be 0.5 mm or 1 mm.
It should be noted that the structure disposed on the side of the housing 102 away from the base 101 is made of kovar material or stainless steel, and the structure may be the upper cover 106. Because the kovar material and the stainless steel cannot be welded with the copper material by the parallel sealing technique, that is, when the base plate 101 and the case 102 are integrally formed and the material for manufacturing is copper, the upper cover 106 cannot be directly welded on the case 102 by the parallel sealing technique. The kovar material layer has been plated on the surface that the bottom plate 101 was kept away from to pipe shell 102 in this application embodiment, welds support 109 on the surface that the bottom plate 101 was kept away from on the kovar material layer, and the material of support 109 includes one or more in stainless steel and the kovar material, and then can adopt parallel seal welding technique to weld the surface that the bottom plate 101 was kept away from to support 109 with upper cover 106, has guaranteed that upper cover 106 is effectively fixed on pipe shell 102.
In the embodiment of the present application, since the base plate 101 and the case 102 are integrally formed, the process steps of welding the case 102 to the base plate 101 can be reduced, thereby simplifying the manufacturing process of the laser and reducing the manufacturing cost of the laser. And the fold of the bottom plate 101 when the pipe shell 102 is welded on the bottom plate 101 is avoided, the influence of high-temperature welding on the flatness of the bottom plate is reduced, and the flatness of the bottom plate is higher.
Fig. 13 and 14 are only for describing a case where the package 102 and the base plate 101 are integrally formed, and do not limit other structures in the laser or the positional relationship between the other structures. For example, in fig. 13 and 14, the laser includes only one collimating lens structure 1071, the laser 10 may include a plurality of collimating lens structures 1071, a carrying structure 1072, and a supporting member 1073, and the upper cover 106 may be any of the above-described upper covers.
To sum up, in the laser provided in the embodiment of the present application, the collimating lens structure is located in the sealed space formed by the light-transmitting sealing layer, the supporting frame, the upper cover, the tube shell and the bottom plate, so that the distance between the collimating lens structure and the laser chip is small. The light emitted by the laser chip is conical light and has a certain divergence angle, the closer the collimating lens structure is to the laser chip, the smaller the light spot formed when the light emitted by the laser chip irradiates the collimating lens structure. Therefore, the light mixing condition between the light rays emitted by the adjacent laser chips is weaker, the distance between the adjacent laser chips can be reduced, and the size of the laser can be smaller.
It should be noted that, the foregoing embodiments of the present application only illustrate several optional laser structures, and each component in the laser provided by the present application may be combined at will, so as to obtain lasers with different structures, and the present application does not limit the combination manner of each component. The components refer to a bottom plate, a tube shell, a supporting frame, a light-transmitting sealing layer, an upper cover, a supporting component, a bearing structure, a collimating lens structure and the like in the laser.
The above description is only exemplary of the present application and should not be taken as limiting, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.

Claims (10)

1. A laser, characterized in that the laser comprises:
a base plate;
a pipe shell;
the bottom plate and the pipe shell enclose a containing space,
in the accommodating space, a plurality of laser chips and a reflection prism are positioned on the bottom plate,
the reflecting prism is used for emitting the light rays emitted by the laser chip along the direction far away from the bottom plate;
the annular upper cover is fixed on the surface of the pipe shell, which is far away from the bottom plate;
the supporting frame is fixed to the upper cover at the edge of the periphery of the supporting frame, the middle area of the supporting frame is provided with n first hollow areas, and n is a positive integer;
a light-transmitting sealing layer covers one side, far away from the bottom plate, of the first hollow area;
the first hollow-out area is used for transmitting light rays emitted by at least one laser chip;
a collimating lens structure is further arranged in a sealed space formed by the light-transmitting sealing layer, the supporting frame, the upper cover, the tube shell and the bottom plate;
the collimating lens structure is used for collimating the light rays reflected by the reflecting prism and then emitting the light rays to the n first hollow areas.
2. The laser of claim 1, wherein said envelope is annular, and wherein said envelope has a boss on an inner annular surface thereof, said collimating lens structure overlapping said boss.
3. The laser of claim 2, wherein said boss is annular and said boss is coaxial with said envelope.
4. A laser according to any one of claims 1 to 3, wherein the laser comprises a plurality of said collimating lens structures, the laser further comprising:
an annular support member fixed to the case;
the periphery of the bearing structure is fixed on the supporting part, the middle area of the bearing structure is provided with a plurality of second hollowed-out areas, and one side, far away from the bottom plate, of each second hollowed-out area is covered with the collimating lens structure;
the collimating lens structure is used for collimating and emitting light rays emitted by at least one laser chip reflected by the reflecting prism.
5. The laser of claim 4, wherein the plurality of laser chips comprises a plurality of rows and a plurality of columns of the laser chips, and each of the collimating lens structures is configured to collimate light emitted from at least one row of the laser chips reflected by the reflecting prism.
6. The laser according to claim 4 or 5, wherein the side of the collimating lens structure facing away from the base plate has at least one convex curved surface curved towards the side facing away from the base plate, the radius of curvature of the convex curved surface being in the range of 1 mm to 4.5 mm.
7. The laser of any one of claims 1 to 6, wherein an inner area of a surface of the upper cover adjacent to the base plate is planar,
the outer side area of the surface of the upper cover close to the bottom plate is attached to the surface of the pipe shell far away from the bottom plate, and the inner side area of the upper cover is attached to the surface of the support frame far away from the bottom plate.
8. The laser of any one of claims 1 to 7, further comprising: the conductive pins penetrate through the side wall of the tube shell;
the orthographic projections of the shell and the conductive pins on the bottom plate are located on the peripheral edge of the bottom plate, and the peripheral edge of the bottom plate is sunken towards one side far away from the shell relative to the middle area of the bottom plate.
9. The laser of claim 8, wherein at least one step is formed at the junction of the peripheral edge of the base plate and the middle region of the base plate on the side of the base plate adjacent to the package, and at least a partial orthographic projection of the conductive pins on the base plate is located on the step.
10. A laser as claimed in claim 8 or 9, wherein the laser includes a plurality of said conductive pins on opposite sides of a central region of the base plate, and wherein a plurality of steps are formed at the junction of a peripheral edge of the base plate and the central region of the base plate on the opposite sides of the base plate on a side of the base plate adjacent to the package.
CN201911134470.6A 2019-11-19 2019-11-19 Laser device Pending CN112909731A (en)

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WO2023030542A1 (en) * 2021-09-06 2023-03-09 青岛海信激光显示股份有限公司 Laser device

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CN204905644U (en) * 2015-08-24 2015-12-23 深圳市创鑫激光股份有限公司 Laser coupled system
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* Cited by examiner, † Cited by third party
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CN113467172A (en) * 2021-07-15 2021-10-01 青岛海信激光显示股份有限公司 Laser and projection system
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Application publication date: 20210604