CN216929163U

CN216929163U - Laser device

Info

Publication number: CN216929163U
Application number: CN202220925502.5U
Authority: CN
Inventors: 周子楠; 田有良; 张昕; 卢瑶
Original assignee: Qingdao Hisense Laser Display Co Ltd
Current assignee: Qingdao Hisense Laser Display Co Ltd
Priority date: 2022-04-20
Filing date: 2022-04-20
Publication date: 2022-07-08
Anticipated expiration: 2032-04-20

Abstract

The application discloses laser belongs to the technical field of photoelectricity. The laser includes: the LED lamp comprises a bottom plate, an annular side wall, a plurality of light-emitting chips and a collimating lens group; the material of the side wall comprises ceramic; the side wall and the plurality of light-emitting chips are both positioned on the bottom plate, and the side wall surrounds the plurality of light-emitting chips; the collimating lens group is positioned on one side of the side wall far away from the bottom plate; the edge area of one surface of the collimating lens group, which is close to the bottom plate, is provided with solder, and the edge of the collimating lens group is fixed with the surface of the side wall, which is far away from the bottom plate, through the solder; the collimating lens group comprises a plurality of collimating lenses which are in one-to-one correspondence with the plurality of light-emitting chips, each collimating lens is positioned on a transmission path of the laser emitted by the corresponding light-emitting chip, and the collimating lenses are used for collimating and emitting the laser emitted by the corresponding light-emitting chips. The application solves the problem that the preparation process of the laser is complicated. The application is used for light emission.

Description

Laser device

Technical Field

The application relates to the field of photoelectric technology, in particular to a laser.

Background

With the development of the optoelectronic technology, the laser is widely used, and the requirements for miniaturization and simplification of the laser are higher and higher.

Fig. 1 is a schematic structural diagram of a laser provided in the related art. As shown in fig. 1, the laser 00 includes a bottom plate 001, an annular sidewall 002, a plurality of light emitting chips 003, an annular sealing frame 004, a light-transmitting sealing layer 005, and a collimator group 006. The sidewalls 002 and the light emitting chips 003 are disposed on the bottom plate 001, and the sidewalls 002 surround the light emitting chips 003. The outer edge of the annular sealing frame 004 is fixed to the surface of the side wall 002 away from the bottom plate 001, and the edge of the light-transmitting sealing layer 005 is fixed to the inner edge of the sealing frame 004. The collimator set 006 is located on a side of the sealing frame 004 away from the base plate 001. The collimating lens group 006 includes a plurality of collimating lenses corresponding to the plurality of light emitting chips 003 one to one, and the laser light emitted by each light emitting chip 003 can be transmitted to the corresponding collimating lens, and then is emitted after being collimated by the collimating lens.

However, in the related art, there are many parts in the laser, and the manufacturing process of the laser is complicated.

SUMMERY OF THE UTILITY MODEL

The application provides a laser, can solve the comparatively loaded down with trivial details problem of preparation process of laser. The laser includes:

the LED lamp comprises a bottom plate, an annular side wall, a plurality of light-emitting chips and a collimating lens group; the side wall and the plurality of light-emitting chips are both positioned on the bottom plate, and the side wall surrounds the plurality of light-emitting chips; the material of the side wall comprises ceramic;

the collimating lens group is positioned on one side of the side wall far away from the bottom plate; the edge area of one surface, close to the bottom plate, of the collimating lens group is provided with solder, and the edge of the collimating lens group is fixed with the surface, far away from the bottom plate, of the side wall through the solder;

the collimating lens group comprises a plurality of collimating lenses which are in one-to-one correspondence with the plurality of light-emitting chips, each collimating lens is positioned on a transmission path of the laser emitted by the corresponding light-emitting chip, and the collimating lenses are used for collimating and emitting the laser emitted by the corresponding light-emitting chips.

The beneficial effect that technical scheme that this application provided brought includes at least:

in the laser instrument that this application provided, the solder through setting up on the collimating mirror group is fixed with collimating mirror group and lateral wall, and then can enclose out the confined space through collimating mirror group, bottom plate and lateral wall. Therefore, a light-transmitting sealing layer and a sealing frame in the laser can be omitted, components in the laser can be reduced, the assembling steps of the components in the preparation process of the laser are fewer, and the preparation process of the laser is simpler.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

Fig. 1 is a schematic structural diagram of a laser provided in the related art;

fig. 2 is a schematic structural diagram of a laser provided in an embodiment of the present application;

FIG. 3 is a schematic structural diagram of another laser provided in an embodiment of the present application;

fig. 4 is a schematic structural diagram of another laser provided in an embodiment of the present application;

FIG. 5 is a schematic structural diagram of another laser provided in an embodiment of the present application;

fig. 6 is a schematic partial structural diagram of a laser provided in an embodiment of the present application;

FIG. 7 is a schematic diagram of a portion of another laser according to an embodiment of the present application;

FIG. 8 is a schematic diagram of a laser according to another embodiment of the present application;

fig. 9 is a schematic structural diagram of an insulator according to an embodiment of the present disclosure;

fig. 10 is a flowchart of a method for manufacturing a laser according to an embodiment of the present disclosure.

Detailed Description

To make the objects, technical solutions and advantages of the present application more clear, embodiments of the present application will be described in further detail below with reference to the accompanying drawings.

With the development of the photoelectric technology, the application of the laser is wider and wider, and the requirements on the preparation difficulty, reliability and miniaturization of the laser are higher and higher. The following embodiments of the present application provide a laser, which can reduce the difficulty in manufacturing the laser, improve the reliability of the laser, and reduce the volume of the laser.

Fig. 2 is a schematic structural diagram of a laser according to an embodiment of the present disclosure. As shown in fig. 2, the laser 10 may include a bottom plate 101, a ring-shaped sidewall 102, a plurality of light emitting chips 103, and a collimating mirror group 104.

The sidewall 102 and the plurality of light emitting chips 103 are disposed on the bottom plate 101, and the sidewall 102 surrounds the plurality of light emitting chips 103. The structure formed by the bottom plate 101 and the side wall 102 can be called a case, and the bottom plate 101 and the side wall 102 enclose a containing space of the case. The housing has an opening which is bounded by an end of the side wall 102 remote from the base 101. Alternatively, the bottom plate 101 and the side walls 102 in the case may be of unitary construction, or may be of separate construction, welded together to form the case.

The set of collimating mirrors 104 is located on the side of the sidewall 102 away from the base plate 101. The collimator group 104 includes a plurality of collimator lenses T in one-to-one correspondence with the plurality of light emitting chips 103 in the laser 10. The collimating lens group 104 has a plurality of collimating lenses T integrally formed, and the collimating lens group 104 is substantially plate-shaped as a whole. The side of the group of collimating lenses 104 facing away from the base plate 101 may comprise a plurality of convexly curved surfaces curving towards the side facing away from the base plate 101. The portion of the collimating lens group 104 where each convex arc surface is located can be regarded as a collimating lens T, and further can be regarded as the collimating lens group 104 including a plurality of collimating lenses T. At least the peripheral edge region of one surface of the collimating lens group 104 close to the base plate 101 is flat. For example, each area of one surface of the collimating lens group 104 close to the bottom plate 101 may be flat, that is, the surface is a plane; or the surface may be uneven, such as a concave middle area and a flat edge area, which is not limited in the embodiments of the present application.

The surface of the sidewall 102 remote from the bottom plate 101 is an annular surface. The edge area of one side of the collimating lens group 104 close to the base plate 101 may be provided with solder H, and the area where the solder H is provided may be an annular area. The collimating lens group 104 can be fixed to the surface of the sidewall 102 away from the bottom plate 101 by the solder H. Thus, the collimating lens group 104 can be used to seal the opening of the package, and the bottom plate 101, the sidewall 102 and the collimating lens group 104 can enclose a closed space. The light emitting chip 103 can be located in the closed space, so as to avoid the corrosion of external water and oxygen and ensure the reliability of the light emitting chip. It should be noted that when the collimator set is provided by a supplier, the collimator set may be provided with solder, that is, the collimator set is provided with solder in advance. Optionally, when the laser is prepared, the collimating lens group is plated with solder. In the embodiment of the present application, the sidewall 102 may be a ceramic sidewall, that is, the material of the sidewall 102 includes ceramic. Because the welding difficulty of the ceramic and the collimating lens group 104 can be low, the direct welding of the collimating lens group 104 and the side wall 102 becomes possible, and the collimating lens group 104 can seal the tube shell.

In the embodiment of the present application, the arrangement area of the solder H on the collimating lens group 104 may be matched with the annular surface of the sidewall 102, and the shape of the collimating lens group 104 may be matched with the shape of the sidewall 102. For example, the shape and size of the region where the solder H is provided may be substantially the same as the shape and size of the annular surface of the side wall 102. The shape and size of the outer edge of the set of collimating mirrors 104 is the same or substantially the same as the shape and size of the outer ring of the sidewall 102. Thus, the annular solder H disposed at the edge region of the collimating lens group 104 can be precisely attached to the annular surface of the sidewall 102 away from the bottom plate 101.

Alternatively, in the embodiment of the present invention, the sidewall 102 may be a square tube structure, and the collimator set 104 is a rectangular plate structure. Alternatively, the sidewall 102 may also be a circular tubular structure, and the corresponding collimating lens group 104 may be a substantially circular plate-shaped structure; the sidewall 102 may also be a pentagonal tubular structure, and the corresponding collimating lens group 104 may be substantially a pentagonal plate-shaped structure; the sidewall 102 may also be a tubular structure with other shapes, and the embodiment of the present application is not limited thereto.

When the laser 10 is manufactured, the bottom plate 101 and the side wall 102 may be welded, and then the light emitting chip 103 may be attached to the bottom plate 101. The set of collimating mirrors 104 provided with solder H may then be arranged on the side of the side wall 102 remote from the base plate 101, and the solder H is brought into contact with the surface of the side wall 102 remote from the base plate 101. The edges of the straight mirror groups 104 are then aligned and heated to melt the solder, and the solder H is then solidified to obtain the assembled laser 10. Alternatively, after the bottom plate 101 is welded to the side wall 102, the edges of the collimating lens group 104 may be heated to melt the solder H disposed on the collimating lens group 104. The collimator set 104 with the melted solder H attached is then disposed on the side of the sidewall 102 away from the bottom plate 101, and the solder H is brought into contact with the surface of the sidewall 102 away from the bottom plate 101. Finally, the solder H is cured to obtain the assembled laser 10.

It should be noted that the light emitting chip in the laser may be a semiconductor chip, and the semiconductor chip has high sensitivity to moisture, harmful gas and pollutants in the environment and is easily damaged. If particles such as dust, water vapor or ionic pollutants enter the laser, the particles adhere to the surface of the light-emitting chip to cause short circuit or open circuit of the light-emitting chip, and finally the light-emitting chip fails. Therefore, the light emitting chip needs to be hermetically packaged to isolate the light emitting chip from the environment, ensure the cleanness of the light emitting chip, and prevent the light emitting chip from being damaged by external substances. The packaging of the light-emitting chip also plays a role in improving the mechanical strength and the optical performance of the laser.

In the related art, a component for sealing the opening of the package in the laser is a cap assembly. As shown in fig. 1, the upper cover assembly includes a metal sealing frame 004 and a light-transmitting sealing layer 005, and the sealing frame 004 and the light-transmitting sealing layer 005 are integrated by glass cement. Certain stress exists between the glass cement and the sealing frame 004, and bubbles are generated in the process of low-temperature sintering of the glass cement. The glass cement risks air leakage during the impact test after the laser preparation is completed.

In the related art, the upper cover assembly and the tube shell are fixed by parallel sealing (or also called parallel seam welding). Parallel sealing is a key sealing process for the airtight packaging of microelectronic monolithic integrated circuits and hybrid circuits, wherein the quality of sealing has a great influence on the sealing quality and reliability of parallel sealing products. In the parallel sealing process, sealing equipment is adopted to roll on the surfaces of two objects to be sealed which are arranged in a superposition mode so as to apply heat to the surfaces of the objects to be sealed, the contact surfaces of the objects to be sealed are made to melt under the action of the heat, and then the two objects to be sealed are combined. In the related art, the outer edge of the sealing frame is overlapped on the side wall of the tube shell, and the sealing and welding equipment rolls on the outer edge of the sealing frame so as to fix the sealing frame and the tube shell.

The technological parameters of parallel seal welding mainly include welding current and welding speed. The greater the welding current, the greater the heat generated by the sealing apparatus. The slower the welding speed, the more heat the object to be sealed receives. If the welding current is too low, a welding spot cannot be formed on the object to be sealed, which may affect the airtightness of the tube shell. If the welding current is too large, the sealing frame is subjected to too much thermal shock, and the sealing frame may be burned out. If the welding speed is too low, the total welding time is prolonged, the welding heat is large, the temperature of the sealing frame and the tube shell is increased, and the sealing track is not flat. If the welding speed is too high, the welding may be discontinuous, and there is a possibility that a leak may occur at the welded portion between the upper cap assembly and the case. Therefore, in the related art, the parallel sealing welding is difficult to control, and the laser is difficult to prepare; the effect of sealing the upper cover component and the tube by adopting a parallel seal welding technology is poor, so that the reliability of the laser is low.

In the embodiment of the application, the laser is not provided with the sealing frame and the light-transmitting sealing layer, and the collimating lens group and the side wall are directly fixed through the welding flux arranged on the collimating lens group. Therefore, the sealing frame and the light-transmitting sealing layer do not need to be fixed by glass cement, and the phenomenon that air leaks from the glass cement position due to bubble breakage caused by the glass cement is avoided. And because the parts in the laser are reduced, the volume of the laser can be reduced, and the miniaturization and the thinning of the laser are facilitated. In the embodiment of the application, the mode of welding through the solder replaces parallel sealing welding to fix the sealed light-transmitting layer and the tube shell. Compared with a parallel sealing welding mode, the operation of a mode of welding by heating the welding flux is simpler, complex welding parameters do not need to be considered, the technological process of sealing the laser can be simplified, and the preparation process of the laser is simplified. In addition, the sealing reliability of the mode of welding by the solder is high, the sealing effect of the laser can be improved, and the reliability of the laser can be improved.

To sum up, in the laser instrument that this application embodiment provided, the solder that sets up through the collimating lens group is fixed with collimating lens group and lateral wall, and then can enclose out sealed space through collimating lens group, bottom plate and lateral wall. Therefore, a light-transmitting sealing layer and a sealing frame in the laser can be omitted, parts in the laser can be reduced, the assembling steps of the parts in the preparation process of the laser are fewer, the preparation process of the laser is simpler, and the miniaturization of the laser is facilitated.

In addition, compared with parallel sealing welding, the controllability is higher and the welding process difficulty is lower in welding by the solder, so that higher welding quality can be ensured, and the preparation difficulty of the laser can be reduced. And the welding quality of welding through the welding flux is higher, so that the sealing performance of a closed space surrounded by the light-transmitting sealing layer, the bottom plate and the side wall can be better ensured, the risk that the light-emitting chip in the closed space is corroded by water oxygen can be further reduced, and the reliability of the laser is improved.

Optionally, in this embodiment, the material of the bottom plate 101 may be metal. The metal may include copper, such as oxygen-free copper. Note that the light-emitting chip 103 generates much heat when emitting laser light, and the thermal conductivity of copper is large. The material of bottom plate 101 is copper in this application embodiment, so can guarantee that the luminous chip 103 that sets up on bottom plate 101 can conduct through bottom plate 101 fast at the heat that the during operation produced, and then gives off relatively fast, avoids the damage of heat gathering to luminous chip. Optionally, the material of the bottom plate 101 may also be one or more of aluminum, aluminum nitride and silicon carbide. Alternatively, the material of the bottom plate 101 may also include ceramic.

Alternatively, the material of the collimating lens group 104 may include glass or sapphire. Compared with the metal side wall in the related art, the welding difficulty of the ceramic material and the glass material is greatly reduced, so that the direct welding of the collimator set 104 and the side wall 102 can be realized. The expansion coefficient of sapphire and the expansion coefficient of pottery differ a little, and when welding sapphire and pottery, the stress that produces between these two materials is less, can reduce the porcelain that produces owing to stress and split the risk. Therefore, the sapphire is used to prepare the collimating lens assembly 104, which can improve the fixing reliability of the sidewall 102 and the collimating lens assembly 104.

In the embodiment of the present application, the solder material disposed at the edge of the collimating lens group 104 may include gold and tin. If the solder can be gold-tin solder, the gold content of the gold-tin solder can account for eighty percent, and the tin content can account for twenty percent. The gold-tin solder has high corrosion resistance, high creep resistance and good heat conduction and electric conductivity. For example, the heat conduction coefficient of the gold-tin solder can reach 57W/m.K. Therefore, the object welded by the gold-tin solder has high welding strength, the controllability of the welding process by the gold-tin solder is superior to that of the parallel sealing welding process, and the yield of the welding by the gold-tin solder is high.

Alternatively, the solder may include a platinum layer and a gold-tin alloy layer sequentially stacked on the edge of the collimating mirror group 104 in a direction away from the collimating mirror group 104. It should be noted that, since gold is difficult to be directly attached to the collimating lens assembly 104, a thin platinum layer may be first disposed on the collimating lens assembly 104, and then a gold-tin alloy layer is further disposed on the platinum layer, so as to ensure the adhesion firmness of the gold-tin alloy layer. Alternatively, the thickness of the platinum layer may range from 0.2 mm to 0.3 mm, e.g. the thickness of the platinum layer may be 0.25 μm. The thickness of the layer of gold-tin alloy platinum is in the range of 2 microns to 3 microns, such as 2.5 microns.

The platinum layer and the gold-tin alloy layer in the solder are both annular, and the shapes and the sizes of the platinum layer and the gold-tin alloy layer can be the same. Illustratively, the width of the solder ranges from 1 mm to 1.5 mm, i.e., the width of the solder is greater than or equal to 1 mm and less than or equal to 1.5 mm. The width of the platinum layer and the gold-tin alloy layer in the solder can also be in the range of 1 mm-1.5 mm. The solder is annular, and the width of the solder is the annular width. Optionally, the width of each position of the solder is the same; or the widths of different positions of the solder may be different, and the widths of the positions may still be within the above-mentioned width range of the solder.

In the case of soldering two objects with a solder, the greater the area of contact between the two objects with the solder, the higher the solder fixation of the two objects. In the embodiment of the present application, the collimating lens group 104 is fixed to the sidewall 102 by a ring-shaped solder at the edge of the collimating lens group 104. Since the solder on the collimating lens group 104 is pre-set, the larger the contact area between the solder and the sidewall 102 is, the better the fixing effect between the collimating lens group 104 and the sidewall 102 is. For example, the width of the ring-shaped surface of the side wall 102 away from the bottom plate 101 may be larger than the width of the solder in the collimating mirror group 104, so as to ensure that the solder may fully contact the side wall when the collimating mirror group 104 is disposed on the surface of the side wall 102 away from the bottom plate 101. If the width of each position of the side wall is the same, the width of the side wall may be greater than 1 mm, that is, the width of the annular surface of the side wall far from the bottom plate 101 is greater than 1 mm.

In the embodiment of the present application, the edge of the collimating lens group 104 is directly fixed to the annular surface of the sidewall 102 for sealing. In order to ensure the sealing effect, it is necessary to ensure that the flatness of the edge of the collimating lens group 104 and the annular surface of the sidewall 102 away from the bottom plate 101 are both high, so as to avoid the situation of sealing failure due to the concave-convex defect existing on the annular surface of the collimating lens group 104 or the sidewall 102. For example, the flatness of the annular surface of the sidewall 102 away from the bottom plate 101 may be greater than or equal to 0.2 mm, i.e., the distance between the most concave point and the most convex point in the surface in the direction perpendicular to the surface is less than 0.2 mm.

In the embodiment of the present application, only the opening of the tube housing is sealed by the collimating lens group 104, and the collimating lens group 104 may further need to have sufficient hardness and strength on the premise of sealing the opening, so as to protect components in the accommodating space of the tube housing. Moreover, the laser emitted from the light emitting chip 103 in the package needs to be emitted through the collimating lens group 104, so the light transmittance of the collimating lens group 104 needs to be relatively high. The Mohs hardness of the collimating mirror assembly 104 can be greater than or equal to 9, and/or the light transmittance can be greater than or equal to 85%. Illustratively, the collimator set 104 may be made of sapphire. The Mohs hardness of the sapphire is as high as 9.0, the light transmittance is more than eighty-five percent, and the sapphire has higher transmittance for visible light and infrared band light.

In the embodiment of the present application, each collimating lens T in the collimating lens group 104 may be a common convex lens. As shown in fig. 2, each collimator lens T has a smooth convex curved surface. Optionally, fig. 3 is a schematic structural diagram of another laser provided in an embodiment of the present application. As shown in fig. 3, at least a portion of the collimating lenses T in the collimating lens group 104 may be fresnel lenses, for example, all the collimating lenses T in the collimating lens group 104 may be fresnel lenses. The surface of the Fresnel lens is composed of a series of sawtooth grooves, and a plurality of concentric circles from small to large are recorded on the surface of the Fresnel lens. The thickness of the fresnel lens can be thinner, so that the volume of the laser can be further reduced.

With continued reference to fig. 2 and 3, the laser 10 may also include a plurality of heat sinks 105 and a plurality of reflective prisms 106. The plurality of heat sinks 105 correspond to the plurality of light emitting chips 103 one to one, and the plurality of reflection prisms 106 also correspond to the plurality of light emitting chips 103 one to one. The heat sink 105 and the reflection prism 106 are fixed on the base plate 101, each light emitting chip 103 is fixed on the corresponding heat sink 105, and each reflection prism 106 is located on the light emitting side of the corresponding light emitting chip 103. The light emitting chips 103 are configured to emit laser light to corresponding reflection prisms 106, and the reflection prisms 106 are configured to reflect the incident laser light in a direction (e.g., a z direction in fig. 2) away from the bottom plate 101, so that the laser light is emitted to the collimator lens group 104. Illustratively, a surface F of the reflection prism 106 opposite to the light emitting chip 103 (i.e., a surface facing the light emitting chip) is a light reflecting surface for reflecting the incident laser light, so as to implement a reflection function of the reflection prism 106 on the laser light. Alternatively, the surface of the reflection prism 106 opposite to the light emitting chip 103 may be plated with a reflection film to form the light reflection surface.

An included angle between the reflecting surface F of the reflecting prism 106 and the surface of the bottom plate 101 may be an acute angle, so as to ensure that the laser emitted by the light emitting chip 103 is reflected toward a direction away from the bottom plate 101. For example, the angle between the reflective surface F and the surface of the bottom plate 101 may be 45 degrees. Alternatively, as shown in fig. 2 and 3, the side surfaces of the reflection prism 106 may be right-angled trapezoids. Alternatively, the side surface of the reflecting prism 106 may also be in a right triangle shape, or an acute triangle shape, or other shapes, which is not limited in the embodiments of the present application.

Alternatively, the laser 10 may not include the reflection prism 106, and the light emitting chip 103 may be fixed to the side of the heat sink 105, so that the light emitting chip 103 emits laser light in a direction away from the base plate 101. In this manner, the laser light emitted from the light emitting chip 103 can be directly emitted to the corresponding collimating lens T without being reflected by the reflecting prism. In this way, the size of the base plate 101 can be smaller and the laser volume can be smaller, since the reflecting prism is omitted.

Fig. 4 is a schematic structural diagram of another laser provided in the embodiment of the present application, and fig. 5 is a schematic structural diagram of another laser provided in the embodiment of the present application. Fig. 4 and 5 can both be top views of the laser shown in fig. 2, with fig. 4 being shown misaligned with the set of straight mirrors 104. As shown in fig. 4, the plurality of light emitting chips 103 in the laser 10 may be arranged in a plurality of rows and columns. Accordingly, the arrangement of the plurality of reflection prisms 106 in the laser 10 matches the arrangement of the light emitting chips 103, and the arrangement of the reflection prisms 106 is not described in detail in this embodiment. Alternatively, the number of light emitting chips in the row direction may be larger than the number of light emitting chips in the column direction.

Fig. 4 illustrates an example where the laser 10 includes 8 light emitting chips 103 arranged in two rows and four columns, where the row direction is the y direction and the column direction is the x direction. The arrangement of the plurality of collimating lenses T in the collimating lens group 104 is also matched with the arrangement of the light emitting chips 103, as shown in fig. 5, the collimating lens group 104 includes 8 collimating lenses T arranged in two rows and four columns. The number and arrangement of the light emitting chips 103 in the laser 10 may also be adapted. For example, the laser 10 may also include 14 light emitting chips 103 arranged in two rows and seven columns, 12 light emitting chips 103 arranged in three rows and four columns, or 10 light emitting chips 103 arranged in two rows and five columns, which is not limited in the embodiment of the present application.

Alternatively, the light emitting directions of the respective light emitting chips 103 in the laser 10 may all be the same. For example, the light emitting direction of the light emitting chips 103 is parallel to the column direction of the light emitting chips 103, i.e., the arrangement direction of the light emitting chips 103 and the corresponding reflective prisms 106 is parallel to the column direction. For example, the light emitting direction of the light emitting chip 103 may be opposite to the x direction. Since the number of the light emitting chips 103 in the row direction is usually larger than the number of the light emitting chips 103 in the column direction, and the reflecting prism 106 is further required to be disposed on the light emitting side of the light emitting chips 103, the light emitting direction of the light emitting chips 103 is parallel to the column direction of the light emitting chips 103, and the difference between the arrangement lengths of the light emitting chips in the row direction and the column direction can be shortened.

Alternatively, the laser 10 in the embodiment of the present application may be a monochromatic laser, in which each light emitting chip 103 is configured to emit laser light of the same color. Alternatively, the laser 10 may be a multi-color laser, in which the plurality of light-emitting chips includes a plurality of types of light-emitting chips, each type of light-emitting chip is configured to emit laser light of one color, and different types of light-emitting chips are configured to emit laser light of different colors. For example, the laser 10 includes three types of light emitting chips for emitting red laser light, green laser light, and blue laser light, respectively. The laser 10 may also include two types of light emitting chips for emitting red laser light and blue laser light, respectively. Optionally, the light emitting chips in the laser 10 may also emit laser light of other colors, and the number of the light emitting chips may also be different from 3, which is not limited in this embodiment of the present application.

In the embodiment of the present application, a light emitting chip for emitting red laser light is referred to as a red light emitting chip, a light emitting chip for emitting green laser light is referred to as a green light emitting chip, and a light emitting chip for emitting blue laser light is referred to as a blue light emitting chip. For example, in two rows of the light emitting chips 103 in the laser 10 shown in fig. 4, one row of the light emitting chips 103 may be both red light emitting chips, a part of the light emitting chips 103 in the other row of the light emitting chips 103 may be blue light emitting chips, and another part of the light emitting chips 103 may be green light emitting chips. For example, the number of the blue light emitting chips and the number of the green light emitting chips may be 2.

Fig. 6 is a partial structural view of a laser provided in an embodiment of the present application, fig. 7 is a partial structural view of another laser provided in an embodiment of the present application, fig. 8 is a schematic view of a laser provided in another embodiment of the present application, and fig. 8 may be a schematic view of a section a-a' of the laser shown in fig. 4 and 5. As shown in fig. 6-8, the laser 10 may also include a plurality of insulators 107. The insulator 107 may serve as a conductive pin for connecting with the light emitting chip 103 to transmit current to the light emitting chip 103. The end portion of the side wall 102 close to the bottom plate 101 has a plurality of gaps K spaced from each other, the plurality of gaps K correspond to the plurality of insulators 107 one to one, the shape of each insulator 107 can be matched with the shape of the corresponding gap K, and each insulator 107 fills the corresponding gap K. Alternatively, the notch K of the sidewall 102 may be formed by an etching process or a grinding process.

Alternatively, each insulator 107 may be fixed to the sidewall 102 at the corresponding notch K by brazing. For example, the middle region of each insulator 107 may be aligned and snapped into the corresponding notch K, and solder may be disposed between each insulator 107 and the corresponding notch K. And then, the side wall 102 clamped with the insulator 107 at the gap K is placed in a high-temperature furnace for sintering, so that the solder is melted to fix the insulator 107 in the corresponding gap K, and the sealing of the joint of the insulator 107 and the corresponding gap K is ensured.

Fig. 9 is a schematic structural diagram of an insulator according to an embodiment of the present application. Referring to fig. 4 to 9, the insulator 107 may include a conductive structure 1071 and an insulating structure 1072, and the insulating structure 1072 may wrap at least a portion of the conductive structure 1071. The conductive structure 1071 is used to electrically connect with the light emitting chip 103 to transmit current to the light emitting chip 103. One end of the conductive structure 1071 is surrounded by the sidewall 102 and the other end is located outside the surrounding area of the sidewall 102, and the one end is electrically connected to the light emitting chip 103. Alternatively, the conductive structure 1071 may be made of metal, and the insulating structure 1072 may be made of ceramic.

For example, as shown in fig. 9, conductive structure 1071 in insulator 107 may include a first conductive layer D1, a second conductive layer D2, and a conductive portion (not shown). The conductive portion connects the first conductive layer D1 and the second conductive layer D2. The insulating structure 1072 in the insulator 107 may include a first portion B1, a second portion B2, and a third portion B3 connected in this order. The first portion B1 is located within the enclosed area of the sidewall 102, the second portion B2 is located outside the enclosed area of the sidewall 102, and the third portion B3 may be used to fill the gap K of the sidewall 102. Optionally, the width of the third portion B3 in the x direction may be greater than or equal to the wall thickness of the side wall 102, so as to ensure that the third portion B3 has a good filling effect on the gap K in the side wall 102, and ensure the air tightness at the gap K.

The first conductive layer D1 may be positioned at a side of the first portion B1 away from the bottom plate 101, and the first conductive layer D1 may be connected to the light emitting chip 103 through a wire. The conductive portions may be embedded inside the insulating structure 1072, such as inside the second portion B2. The second conductive layer D2 may be positioned at a side of the second portion B2 away from the bottom plate 101, and the second conductive layer D2 may be connected to an external power source. The current from the external power source may be transmitted to the light emitting chip 103 through the second conductive layer D2, the conductive portion in the insulator 107, and the first conductive layer D1 in this order.

Alternatively, the surface of the first portion B1 away from the bottom plate 101 and the surface of the second portion B2 away from the bottom plate 101 may be flush, which may facilitate the connection of the first conductive layer D1 and the second conductive layer D2. Alternatively, the surface of the first portion B1 away from the bottom plate 101 and the surface of the second portion B2 away from the bottom plate 101 may have a height difference, and the embodiment of the present application is not limited.

Alternatively, the first conductive layer D1 may cover the whole area of the surface of the first portion B1 away from the bottom plate 101, or may cover only a partial area of the surface, and the second conductive layer D2 may cover the whole area of the surface of the second portion B2 away from the bottom plate 101, or may cover only a partial area of the surface.

Alternatively, the third portion B3 of the insulator 107 may be convex relative to the first portion B1 and the second portion B2 in a direction away from the bottom plate 101 (e.g., in the z direction in the figure). The insulator 107 may be of a T-shaped configuration. The first cross section of the insulator 107 may have a T-shape, and the first cross section may be parallel to the arrangement direction of the first portion B1 and the second portion B2 in the insulator 107 and parallel to the z-direction. A portion of the third portion B3 protruding with respect to the first and second portions B1 and B2 may have a rectangular parallelepiped shape. Alternatively, the convex portion of the third portion B3 may have other shapes, such as a pyramid shape, a truncated pyramid shape, or other shapes, which is not limited in the embodiments of the present application.

Alternatively, the second cross section of the insulator 107 may be rectangular, and the second cross section may be perpendicular to the arrangement direction of the first portion B1 and the second portion B2 in the insulator 107. The second cross section may also be a left or right side view of the insulator 107 in the laser 10 shown in fig. 4-7. The insulator 107 with the shape is relatively simple to prepare in the shape of the corresponding notch K in the side wall 102, the manner of clamping the insulator 107 with the shape in the notch K is relatively simple, and the manner of fixing the side wall 102 and the insulator 107 is relatively simple. Optionally, the second cross section of the insulator 107 may also be circular, pentagonal, hexagonal or other shapes, which is not limited in this embodiment.

The length direction of the insulator 107 may be the arrangement direction (i.e., y direction) of the first part B1 and the second part B2, the width direction may be perpendicular to the arrangement direction (i.e., x direction), and the height direction may be perpendicular to the bottom plate 101 (i.e., z direction). It should be noted that the length of the insulator 107 is related to the wall thickness of the side wall 102, and the thicker the side wall 102 is, the longer the length of the insulator 107 is. Alternatively, the length of the first portion B1 and the second portion B2 in the x direction in the insulator 107 may be fixed, and the thickness of the side wall 102 affects only the length of the third portion B3 in the insulator 107. In the embodiment of the present application, since the third portion B3 of the insulator 107 is protruded relative to the first portion B1 and the second portion B2, the height of the third portion B3 of the insulator 107 is the highest, and the height of the insulator 107 may refer to the height of the third portion B3.

In the embodiment of the present application, the surface of the insulator 107 near the bottom plate 101 and the annular surface of the sidewall 102 near the bottom plate 101 may be flush. After the insulator 107 is fixed in the notch K in the sidewall 102 in this way, the surface of the integral structure formed by the sidewall 102 and the insulator 107 close to the bottom plate 101 can be ensured to be flat. This overall structure carries out welded effect better with bottom plate 101, and the risk that the gap appears in the splice is less, can guarantee that laser instrument 10's gas tightness is better. Alternatively, the integral structure and the bottom plate 101 may be welded by brazing. For example, a solder ring may be placed between the bottom plate 101 and the integrated structure, and then the bottom plate 101 and the integrated structure are placed in a high temperature furnace, so that the solder ring is melted to fill the gap between the bottom plate 101 and the bottom surface of the integrated structure, thereby achieving the soldering of the bottom plate 101, the sidewall 102 and the insulator 107.

In the above embodiments of the present application, the surfaces of the first portion B1, the second portion B2, and the third portion B3 in the insulator 107, which are close to the bottom plate 101, are flush with each other, and the surfaces are flush with the annular surface of the sidewall 102, which is close to the bottom plate 101. Alternatively, only the surface of the third portion B3 near the bottom plate 101 may be flush with the annular surface of the side wall 102 near the bottom plate 101. At least one of the first portion B1 and the second portion B2 may be far from the bottom plate 101 relative to the surface of the third portion B3 near the bottom plate 101, i.e., the at least one portion may be spaced apart from the bottom plate 101. This is not illustrated in the embodiments of the present application.

Alternatively, the plurality of notches K of the sidewall 102 in the laser 10 may be equally distributed on two opposite sides of the sidewall 102, such as two opposite sides of the sidewall 102 in the y direction. Accordingly, a plurality of insulators 107 in the laser 10 are also distributed on the opposite sides. Optionally, the conductive structure 1071 in the insulator 107 on one of the two sides serves as a positive electrode pin for connecting with a positive electrode of an external power supply; the conductive structure 1071 in the insulator 107 on the other side serves as a negative terminal for connection to the negative terminal of an external power source.

The laser 10 may be a monochromatic laser. The plurality of light emitting chips 103 in the laser 10 may be arranged in a plurality of rows and columns, and the row direction of the light emitting chips 103 may be the x direction. Each row of light emitting chips 103 may be connected in series, and two insulators 107 are respectively disposed at two ends of each row, and each row of light emitting chips 103 may be respectively connected to a positive electrode and a negative electrode of an external power source through the two insulators 107. Alternatively, all the light emitting chips 103 in the monochromatic laser may also be connected in series, in which case the laser 10 may only include two insulators 107.

The laser 10 may also be a multi-color laser. The plurality of light emitting chips 103 in the laser 10 may include a plurality of types of light emitting chips 103, each type of light emitting chip 103 for emitting laser light of one color, and different types of light emitting chips 103 for emitting laser light of different colors. Each type of light emitting chip 103 may include at least one light emitting chip. As for any type of light emitting chip 103, if it includes a plurality of light emitting chips, the plurality of light emitting chips may be connected in series.

In an alternative manner, the number of the insulators 107 may be twice the number of the types of the light emitting chips 103, each type of the light emitting chips 103 is connected to two insulators 107, and the insulators 107 connected to different types of the light emitting chips 103 are different. One insulator 107 of the two insulators 107 is a positive electrode pin, and the other insulator 107 is a negative electrode pin. For example, each row of the light emitting chips 103 in the laser 10 may include only one type of light emitting chip, and at this time, each row of the light emitting chips 103 may be connected in series, and the two light emitting chips 103 at two ends are respectively connected to two insulators 107, and one insulator 107 is a positive electrode pin, and the other insulator 107 is a negative electrode pin. If the laser 10 includes three types of light emitting chips 103, the laser 10 may include six insulators.

In another alternative, the number of insulators 107 may be less than twice the number of classes of light emitting chips 103. At this time, each type of light emitting chip 103 still needs to be connected with two insulators 107, but one of the insulators 107 connected with different types of light emitting chips 103 may be the same, that is, the different types of light emitting chips 103 may share the insulator. However, it is necessary to ensure that at least one insulator 107 is different from the other insulator 107 in the connection of any two types of light emitting chips 103.

Illustratively, as in fig. 4, the laser 10 may include three types of light emitting chips and includes four insulators 107. In this case, only one of the four insulators 107 may be used as the negative electrode pin, and the remaining three insulators 107 may be used as the positive electrode pin. The three types of light emitting chips 103 are all connected to the negative electrode pin, i.e., all share the negative electrode pin. And the three types of light emitting chips 103 are respectively connected with the plurality of anode pins in a one-to-one correspondence manner, i.e., the anode pins are not shared. Alternatively, only one of the four insulators 107 is used as the positive electrode pin, and the remaining three insulators 107 are used as the negative electrode pin. The three types of light emitting chips 103 may all share the positive electrode pin at this time. Optionally, in a manner of sharing the pins, a switching station may be further disposed in the laser to implement connection between the light emitting chip and the insulator 107, and a specific switching manner is not illustrated in this embodiment of the application.

In the embodiment of the present application, a wire may be disposed between the light emitting chips 103 that need to be connected in series to realize the series connection of the light emitting chips 103. A wire may also be provided between the first conductive layer D1 of the insulator 107 and the light emitting chip 103 to connect the insulator 107 and the light emitting chip 103.

In the embodiment of the present application, a wire may be disposed between two components to be connected by using a ball bonding technique. When the ball bonding technology is adopted to weld the lead, a routing tool is adopted to melt one end of the lead, the melted end is pressed on the object to be connected, and ultrasonic waves are applied to the routing tool to complete the fixation of the lead and the object to be connected. Alternatively, the wire may be a gold wire, and the process of fixing the wire and the conductive leads may also be referred to as a gold wire bonding process. In this application embodiment, insulator 107 can contact with bottom plate 101, because bottom plate 101's supporting role when routing to first conducting layer D1, insulator 107's pressure bearing capacity is stronger, and the probability that insulator 107 takes place the breakage under the effect of the pressure that this routing equipment was applyed is less, and the welding firmness of wire and first conducting layer D1 can be higher. Therefore, the wire bonding success rate and the lead fixing effect can be improved, and the preparation yield of the laser is improved.

Optionally, the number of wires between any two components connected by wires in the laser 10 may be multiple to ensure the reliability of the connection between the components and to reduce the sheet resistance on the wires. For example, the first conductive layer D1 and the light emitting chips 103, and the adjacent light emitting chips 103 may be connected by a plurality of wires.

Alternatively, as an alternative to an insulator, a plurality of openings may be provided in the middle region of the side wall 102, and conductive pins may be provided in the openings. The conductive leads may extend through the openings in the sidewalls into the enclosed region of the sidewalls and are secured to the sidewalls. The conductive pins can be electrically connected with the electrodes of the light-emitting chip so as to transmit an external power supply to the light-emitting chip, and further excite the light-emitting chip to emit laser.

In addition, compared with parallel sealing welding, the controllability is higher and the welding process difficulty is lower in welding through the solder, so that higher welding quality can be ensured, and the preparation difficulty of the laser can be reduced. And the welding quality of welding through the welding flux is higher, so that the sealing performance of a closed space surrounded by the light-transmitting sealing layer, the bottom plate and the side wall can be better ensured, the risk that the light-emitting chip in the closed space is corroded by water oxygen can be further reduced, and the reliability of the laser is improved.

Fig. 10 is a flowchart of a method for manufacturing a laser according to an embodiment of the present disclosure, which may be used to manufacture the laser 10. As shown in fig. 10, the method may include:

step 501, providing a bottom plate, an annular side wall, a plurality of light emitting chips and a collimating lens group, wherein a solder is arranged in the edge area of one side of the collimating lens group.

Illustratively, the supplier of the individual components may directly provide the base plate, the annular side wall, the plurality of light emitting chips and the set of collimating mirrors. The edge area of the side, opposite to the cambered surface, of the collimating lens group directly provided by a supplier is preset with solder, for example, the solder is gold-tin solder. Alternatively, each light emitting chip provided by the supplier may be disposed on a corresponding heat sink, and an assembly of each light emitting chip and the corresponding heat sink is referred to as a chip assembly in the embodiments of the present application. Optionally, a plurality of reflecting prisms and a plurality of insulators, or conductive pins may also be provided in step 501.

And 502, welding the side wall on the bottom plate by taking the annular surface in the side wall as a welding surface.

The side wall has two annular surfaces. Optionally, gold layers may be disposed on both annular surfaces, and either annular surface may be soldered to the base plate.

For example, a ring-shaped silver-copper solder may be placed on the bottom plate, then the ring-shaped side wall may be placed on the bottom plate, and the ring-shaped bottom surface of the side wall may be covered with the silver-copper solder, and then the bottom plate bearing the side wall may be placed in a high temperature furnace to be hermetically sintered, so that the bottom plate and the side wall may be welded into a whole. Optionally, the sidewall provided in step 501 may have a plurality of notches for installing insulators, and in step 502, the insulators may be welded in the positions of the notches, and then the sidewall and the bottom plate are welded by using one end of the sidewall where the insulators are welded as a welding surface. Or the side walls may have a plurality of openings for receiving conductive pins. Step 502 may also place a ring-shaped solder structure (e.g., a ring-shaped glass bead) in the opening on the sidewall, and pass a conductive pin through the solder structure and the opening where the solder structure is located. And then, the side wall inserted with the conductive pin and the bottom plate are sealed and sintered together.

Step 503, attaching the plurality of light emitting chips to the region surrounded by the side wall on the bottom plate.

For example, after the bottom plate and the side walls are welded, the provided chip assemblies and the reflecting prisms may be attached to the bottom plate in the area surrounded by the side walls, and each reflecting prism is located at the light emitting side of the corresponding light emitting chip, so as to obtain an assembly structure of the bottom plate, the side walls, the chip assemblies and the reflecting prisms. Alternatively, the chip assembly and the reflecting prism can be attached to the base plate by silver paste high-temperature sintering. Alternatively, after the chip assembly is mounted, wire bonding may be performed to connect the insulator (or the conductive pin) and the electrode of the light emitting chip by a gold wire.

Step 504, the collimating lens group is disposed on a side of the sidewall away from the bottom plate, and the solder contacts the surface of the sidewall away from the bottom plate.

For example, the collimating lens set provided with the solder may be first disposed on a side of the sidewall away from the bottom plate, and the solder faces the sidewall, so that the annular solder is aligned with the annular surface of the sidewall, and then the light-transmitting sealing layer is pressed down to make the solder therein contact with the surface of the sidewall away from the bottom plate.

Step 505, heating the edge area of the collimating lens group to melt the solder on the collimating lens group.

For example, the collimator set may be heated by a gas heating device, such as heating only the edge of the light-transmissive sealing layer until the solder on the collimator set is melted. The molten solder can then solder the collimating lens assembly to the sidewall. Such as by controlling the length of heating time to control the extent of melting of the solder.

Optionally, after step 503, the solder on the collimating lens group may be melted, and then the collimating lens group is fastened to the side of the sidewall far from the bottom plate, and the solder is contacted with the surface of the sidewall far from the bottom plate, so as to solder the collimating lens group and the sidewall through the solder.

And step 506, solidifying the welding material to obtain the laser.

For example, the molten solder may be cooled to solidify the solder, so as to achieve the sealing and fixing of the collimator lens group and the side wall.

It should be noted that the above preparation process is only an exemplary process provided in the embodiment of the present application, and the welding process adopted in each step may also be replaced by other processes, and the sequence of each step may also be adapted to be adjusted, which is not limited in the embodiment of the present application.

In summary, in the preparation method provided by the embodiment of the present application, the collimating lens group is fixed to the side wall by the solder arranged thereon, and then a sealed space is enclosed by the collimating lens group, the bottom plate and the side wall. Therefore, a light-transmitting sealing layer and a sealing frame in the laser can be omitted, parts in the laser can be reduced, the assembling steps of the parts in the preparation process of the laser are fewer, the preparation process of the laser is simpler, and the miniaturization of the laser is facilitated.

It is noted that the terms "comprises" and "comprising," as well as any variations thereof, are intended to cover but not to be exhaustive in this application. In the embodiments of the present application, the terms "first", "second", and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. The term "at least one" refers to one or more. The term "plurality" means two or more unless expressly limited otherwise. "substantially" and "substantially" mean within an acceptable error range, one skilled in the art can solve the technical problem and achieve the technical effect within a certain error range. In the drawings, the size of layers and regions may be exaggerated for clarity of illustration. Also, it will be understood that when an element or layer is referred to as being "on" another element or layer, it can be directly on the other element or layer or intervening layers may also be present. Like reference numerals refer to like elements throughout. The term "and/or" is merely an associative relationship that describes an associated object, meaning that three relationships may exist, e.g., a and/or B, may mean: a exists alone, A and B exist simultaneously, and B exists alone.

The embodiments of the laser and the embodiments of the method for manufacturing the laser in the present application can be referred to each other. The above description is only exemplary of the present application and should not be taken as limiting, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.

Claims

1. A laser, characterized in that the laser comprises: the LED lamp comprises a bottom plate, an annular side wall, a plurality of light-emitting chips and a collimating lens group; the side wall and the plurality of light-emitting chips are both positioned on the bottom plate, and the side wall surrounds the plurality of light-emitting chips; the side wall is made of ceramic;

2. The laser of claim 1, wherein the solder material comprises gold and tin.

3. The laser of claim 1, wherein at least some of the plurality of collimating lenses are fresnel lenses.

4. The laser of claim 1, wherein the collimating lens comprises sapphire.

5. The laser of claim 1, wherein the material of the base plate comprises a metal or a ceramic.

6. The laser of claim 1, further comprising a plurality of reflective prisms;

the plurality of reflecting prisms correspond to the plurality of light emitting chips one by one, each reflecting prism is positioned on the light emitting side of the corresponding light emitting chip, and the surface of the reflecting prism facing the corresponding light emitting chip is a reflecting surface;

the light emitting chips are used for emitting laser to the reflecting surfaces of the corresponding reflecting prisms, and the reflecting surfaces are used for reflecting the incident laser to the collimating lenses corresponding to the light emitting chips along the direction far away from the bottom plate.

7. The laser according to any one of claims 1 to 6, wherein the plurality of light emitting chips are arranged in two rows and a plurality of columns;

the light emitting directions of the light emitting chips are parallel to the column direction of the light emitting chips.

8. The laser of any one of claims 1 to 6, further comprising a plurality of insulators; a plurality of mutually spaced gaps are formed in the end part, close to the bottom plate, of the side wall, the gaps correspond to the insulators one to one, and each insulator is filled in the corresponding gap;

the insulator is connected with the light-emitting chip to transmit current to the light-emitting chip.

9. The laser of claim 8, wherein the insulator comprises a conductive structure and an insulating structure, the insulating structure encasing at least a portion of the conductive structure;

one end of the conductive structure is surrounded by the side wall, the other end of the conductive structure is located outside the surrounding area of the side wall, and the one end of the conductive structure is connected with the light-emitting chip.

10. The laser of claim 8, wherein the plurality of light emitting chips comprise a plurality of types of light emitting chips, each type of light emitting chip is configured to emit laser light of one color, and the color of the laser light emitted by different types of light emitting chips is different;

in the laser, the number of the insulators is twice of the number of the light-emitting chips, each light-emitting chip in the multiple types of light-emitting chips is connected with two insulators in the multiple insulators, and different types of light-emitting chips are connected with different insulators; one of the two insulators is used for connecting the positive pole of a power supply, and the other insulator is used for connecting the negative pole of the power supply.