WO2024067218A1

WO2024067218A1 - Projection device

Info

Publication number: WO2024067218A1
Application number: PCT/CN2023/119469
Authority: WO
Inventors: 郭梦晓; 张昕; 周子楠; 田有良; 李建军; 侯乃文
Original assignee: 青岛海信激光显示股份有限公司
Priority date: 2022-09-27
Filing date: 2023-09-18
Publication date: 2024-04-04

Abstract

A projection device (1000), comprising a light source (100), an optical modulation assembly (200), and a lens (300). The light source (100) comprises a laser (10). The laser (10) comprises a bottom plate (101), a frame body (102), a plurality of light-emitting chips (103) and at least one pin assembly (104). The frame body (102) is arranged on the bottom plate (101) and defines an accommodating space (112) with the bottom plate (101). The frame body (102) comprises at least one fixed notch (1020). The pin assembly (104) comprises an insulator (1041) and at least one electrode pin (1042). The insulator (1041) is connected to the frame body (102) by means of the fixed notch (1020). The at least one electrode pin (1042) is spaced apart on the insulator (1041). The electrode pin (1042) comprises a first conductive layer (10421) and a second conductive layer (10422). The first conductive layer (10421) is located in the accommodating space (112) and is electrically connected to the light-emitting chips (103). The second conductive layer (10422) is located outside the accommodating space (112) and is electrically connected to the first conductive layer (10421) and an external circuit.

Description

Projection equipment

This application claims the priority of the Chinese patent application with application number 202223314384.3 filed on December 9, 2022; the priority of the Chinese patent application with application number 2022222567300.0 filed on September 27, 2022; the priority of the Chinese patent application with application number 202222567324.6 filed on September 27, 2022, the entire contents of which are incorporated by reference into this application.

Technical Field

The present disclosure relates to the field of optoelectronic technology, and in particular to a projection device.

Background technique

With the development of laser projection technology, projection equipment has gradually entered people's lives and become an indispensable item in people's work and life. Among them, lasers can be used in projection equipment as their light source. In addition, with the development of laser preparation technology, the market has higher and higher requirements for the simplification of laser structure and reliability.

Summary of the invention

A projection device is provided, the projection device comprising a light source, an optical modulation component and a lens. The light source is configured to emit lasers of multiple colors as an illumination beam; the optical modulation component is configured to modulate the illumination beam to obtain a projection beam; the lens is located at the light-emitting side of the optical modulation component, and the lens is configured to project the projection beam to form a projection picture; the light source comprises a laser, and the laser comprises a base plate, a frame, a plurality of light-emitting chips and at least one pin component. The frame is arranged on the base plate, and defines a housing space with the base plate, and the frame comprises at least one fixed notch. The plurality of light-emitting chips are arranged on the base plate and are located in the housing space. The at least one pin component is arranged corresponding to the at least one fixed notch. The pin component comprises an insulator and at least one electrode pin. The insulator is connected to the frame through the fixed notch. The at least one electrode pin is arranged on the insulator at intervals. The electrode pin comprises a first conductive layer and a second conductive layer. The first conductive layer is located in the housing space and is configured to be electrically connected to the light-emitting chip. The second conductive layer is located outside the housing space and is configured to be electrically connected to the first conductive layer and an external circuit.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG1 is a structural diagram of a laser in the related art;

FIG2 is a structural diagram of a projection device according to some embodiments;

FIG3 is a structural diagram of a light source according to some embodiments;

FIG4 is a structural diagram of another light source according to some embodiments;

FIG5 is a light path diagram of a light source, an optical modulation component, and a lens in a projection device according to some embodiments;

FIG6 is a structural diagram of a laser according to some embodiments;

FIG7 is an exploded view of the laser shown in FIG6 ;

FIG8 is a schematic diagram of a pin assembly according to some embodiments;

FIG9 is a structural diagram of another pin assembly according to some embodiments;

FIG10 is a structural diagram of a frame according to some embodiments;

FIG. 11 is a perspective view of a solder assembly according to some embodiments;

FIG. 12 is a perspective view of another solder assembly according to some embodiments;

FIG13 is a structural diagram of another frame according to some embodiments;

FIG14 is a structural diagram of yet another frame according to some embodiments;

FIG15 is another structural diagram of a laser according to some embodiments;

FIG16 is another structural diagram of a laser according to some embodiments;

FIG17 is another structural diagram of a laser according to some embodiments;

FIG18 is another structural diagram of a laser according to some embodiments;

FIG19 is another structural diagram of a laser according to some embodiments;

FIG20 is another structural diagram of a laser according to some embodiments;

FIG21 is another structural diagram of a laser according to some embodiments;

FIG. 22 is a cross-sectional view of a pin assembly according to some embodiments;

FIG23 is a cross-sectional view of a pin assembly according to some embodiments at another viewing angle;

FIG. 24 is a structural diagram of another pin assembly according to some embodiments;

FIG. 25 is a structural diagram of another pin assembly according to some embodiments;

FIG26 is another structural diagram of a laser according to some embodiments;

FIG27 is another structural diagram of a laser according to some embodiments;

FIG. 28 is yet another structural diagram of a laser according to some embodiments.

Detailed ways

The following will be combined with the accompanying drawings to clearly and completely describe some embodiments of the present disclosure. Obviously, the described embodiments are only part of the embodiments of the present disclosure, rather than all the embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by ordinary technicians in this field are within the scope of protection of the present disclosure.

Unless the context requires otherwise, throughout the specification and claims, the term "comprise" and other forms thereof, such as the third person singular form "comprises" and the present participle form "comprising", are to be interpreted as open, inclusive, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "example", "specific example" or "some examples" and the like are intended to indicate that specific features, structures, materials or characteristics associated with the embodiment or example are included in at least one embodiment or example of the present disclosure. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the specific features, structures, materials or characteristics described may be included in any one or more embodiments or examples in any appropriate manner.

In the following, the terms "first" and "second" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.

When describing some embodiments, the expressions "coupled" and "connected" and their derivatives may be used. The term "connected" should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium. The term "coupled" indicates that two or more components are in direct physical or electrical contact. The term "coupled" or "communicatively coupled" may also refer to two or more components that are not in direct contact with each other, but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited to the contents of this document.

“A and/or B” includes the following three combinations: A only, B only, and a combination of A and B. “At least one of A, B, or C” includes the following combinations of A, B, and C: A only, B only, C only, a combination of A and B, a combination of A and C, a combination of B and C, and a combination of A, B, and C.

The use of "adapted to" or "configured to" herein is meant to be open and inclusive language that does not exclude devices adapted or configured to perform additional tasks or steps.

As used herein, "about," "substantially," or "approximately" includes the stated value and an average value that is within an acceptable range of variation from the particular value as determined by one of ordinary skill in the art taking into account the measurements in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system).

As used herein, "parallel," "perpendicular," and "equal" include the stated conditions and conditions approximate to the stated conditions, the range of which is within an acceptable range of deviation as determined by one of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system).

Generally, when preparing a laser, it is necessary to insert a plurality of electrode pins into the frame of the laser so that the light-emitting chip surrounded by the frame can be connected to the plurality of electrode pins through wires, so that the light-emitting chip can receive current to realize the light emission of the laser. However, the preparation process is complicated, and the prepared electrode pins may also have errors. For example, the prepared electrode pins do not match the wires, making it difficult to connect the light-emitting chip to the electrode pins.

FIG. 1 is a structural diagram of a laser of the related art. For example, as shown in FIG. 1 , the laser 10′ includes a base plate 101′, a frame 102′, a plurality of light-emitting chips 103′, and a plurality of pin assemblies 104′. The frame 102′ and the plurality of light-emitting chips 103′ are respectively arranged on the base plate 101′, the frame 102′ and the base plate 101′ form a receiving space 112′, the plurality of light-emitting chips 103′ are respectively located in the receiving space 112′, and the plurality of pin assemblies 104′ are connected to the opposite sides of the frame 102′ (e.g., the M side and the N side in FIG. 1 ). The light-emitting chip 103′ is connected to the pin assembly 104′ through a wire 111′ to receive the current transmitted by the pin assembly 104′. However, in order to prepare the laser 10′ using the above method, each pin assembly 104′ needs to be fixed to the frame 102′ respectively, so that the preparation process of the laser 10′ is cumbersome and the reliability of the laser 10′ is low.

In addition, in the laser 10' whose pin assembly 104' is made of metal, since it is necessary to avoid conduction between the pin assembly 104' and the base plate 101', a certain distance needs to be set between the pin assembly 104' and the base plate 101', resulting in a larger tube shell thickness of the laser 10' and a larger volume of the laser 10', which is not conducive to the miniaturization of the laser.

Some embodiments of the present disclosure provide a projection device 1000, the projection device 1000 includes a light source assembly 100, the light source assembly 100 includes In the laser 10 , the plurality of electrode pins 104 in the laser 10 are an integrated part. Thus, the fixing and connecting process of the plurality of electrode pins 104 can be simplified, so as to simplify the preparation process of the laser 10 and improve the reliability of the laser 10 .

FIG. 2 is a structural diagram of a projection device according to some embodiments. As shown in FIG. 2 , the projection device 1000 includes an entire housing 400 (only a portion of the entire housing 400 is shown in FIG. 2 ), a light source 100 assembled in the entire housing 400, an optical modulation component 200, and a lens 300. The light source 100 is configured to provide an illumination beam (such as a laser). The optical modulation component 200 is configured to modulate the illumination beam provided by the light source 100 using an image signal to obtain a projection beam. The lens 300 is configured to project the projection beam onto a projection screen 2000 or a wall to form a projection picture.

The light source 100, the optical modulation component 200 and the lens 300 are sequentially connected along the light beam propagation direction, and each is wrapped by a corresponding housing. The housings of the light source 100, the optical modulation component 200 and the lens 300 support the corresponding optical components and enable each optical component to meet certain sealing or airtight requirements.

One end of the optical modulation component 200 is connected to the light source 100, and the light source 100 and the optical modulation component 200 are arranged along the exit direction of the illumination light beam of the projection device 1000 (refer to the M direction in FIG. 2 ). The other end of the optical modulation component 200 is connected to the lens 300, and the optical modulation component 200 and the lens 300 are arranged along the exit direction of the projection light beam of the projection device 1000 (refer to the N direction shown in FIG. 2 ). The exit direction M of the illumination light beam is substantially perpendicular to the exit direction N of the projection light beam. On the one hand, this connection structure can adapt to the optical path characteristics of the reflective light valve in the optical modulation component 200, and on the other hand, it is also conducive to shortening the length of the optical path in one dimensional direction, which is conducive to the structural arrangement of the whole machine. For example, when the light source 100, the optical modulation component 200 and the lens 300 are arranged in one dimensional direction (for example, the M direction), the length of the optical path in the dimensional direction will be very long, which is not conducive to the structural arrangement of the whole machine. The reflective light valve will be described later.

In some embodiments, the light source 100 can provide three primary colors of light (or other colors of light can be added on the basis of the three primary colors of light) in a timely manner. Due to the persistence of vision of the human eye, the human eye sees white light formed by the mixture of the three primary colors of light. Alternatively, the light source 100 can also output the three primary colors of light at the same time and continuously emit white light. The light source 100 may include a laser that can emit laser light of at least one color, such as a red laser, a blue laser, or a green laser. In the case where the laser emits laser light of one color, the laser can be called a monochromatic laser. In this case, the light source 100 can also include a fluorescent wheel, and the monochromatic laser cooperates with the fluorescent wheel to enable the light source to emit light beams of multiple colors.

3 is a structural diagram of a light source according to some embodiments. The light source 100 includes a laser 10 and a light combining component 20. For example, the laser 10 is a multicolor laser. The laser 10 includes a plurality of light-emitting chips. The plurality of light-emitting chips may be arranged in one row or multiple rows. The light combining component 20 is located on the light-emitting side of the laser 10, and the light combining component 20 is configured to combine the lasers of different colors emitted by the plurality of light-emitting chips of the laser 10 and then emit them. Alternatively, the laser 10 may also be a monochromatic laser, and the light combining component 20 may combine the lasers emitted by the light-emitting chips at different positions in the laser 10 to reduce the size of the formed light spot.

In some embodiments, the light combining component 20 includes a plurality of light combining mirrors. For example, as shown in FIG3 , the light combining component 20 includes a first light combining mirror 201, a second light combining mirror 202, and a third light combining mirror 203. The first light combining mirror 201, the second light combining mirror 202, and the third light combining mirror 203 may correspond to a row of light emitting chips in the laser 10, respectively, and are configured to reflect the laser light emitted by the light emitting chip. At least one of the first light combining mirror 201, the second light combining mirror 202, and the third light combining mirror 203 may be a dichroic mirror. For example, the second light combining mirror 202 and the third light combining mirror 203 are dichroic mirrors, respectively, to achieve light combining of the laser light emitted by each row of light emitting chips.

In some embodiments, the spacing between rows of light-emitting chips in the laser 10 is relatively small, and correspondingly, the spacing between light-combining mirrors in the light-combining component 20 may also be relatively small.

As shown in FIG3 , the light source 100 further includes a converging lens 30 . The laser light emitted by the light combining component 20 can be directed to the converging lens 30 for converging, and then directed to the optical modulation component 200 .

FIG3 takes the example that the transmission direction of the laser after light combination is perpendicular to the light emitting direction of the laser 10. The transmission direction of the laser after light combination through the light combining component 20 may also be parallel to the light emitting direction of the laser 10. FIG4 is a structural diagram of another light source according to some embodiments. For example, as shown in FIG4, there may be at least one light combining mirror in the light combining component 20, and the at least one light combining mirror transmits the laser emitted by the corresponding row of light emitting chips, and reflects the laser emitted by the other rows of light emitting chips, so that the transmission direction of the laser after light combination is the same as the light emitting direction of the laser 10. The at least one light combining mirror may be located at the edge of the light combining component 20, and the other light combining mirrors in the light combining component 20 respectively reflect the laser emitted by the corresponding light emitting chip to the at least one light combining mirror.

In addition, the arrangement direction of the light combining component 20 and the converging lens 30 in FIG. 3 is perpendicular to the light emitting direction of the laser 10 , and the arrangement direction of the light combining component 20 and the converging lens 30 in FIG. 4 is parallel to the light emitting direction of the laser 10 .

FIG5 is a light path diagram of a light source, an optical modulation component, and a lens in a projection device according to some embodiments. As shown in FIG5, the optical modulation component 200 includes a light homogenizing component 210, a lens component 220, a light valve 240 (i.e., an optical modulation component), and a prism component 250. The light homogenizing component 210 is configured to homogenize the incident illumination beam and emit it to the lens component 220. The lens component 220 can first homogenize the illumination beam. After being collimated, the light beam is converged and emitted to the prism assembly 250. The prism assembly 250 reflects the illumination light beam to the light valve 240. The light valve 240 is configured to modulate the illumination light beam incident thereon into a projection light beam according to the image signal, and emit the projection light beam to the lens 300.

In some embodiments, the light homogenizing component 210 may include a light pipe or a fly-eye lens group. For example, the light homogenizing component 210 includes a light pipe, and the light inlet of the light pipe is rectangular. The illumination light beam from the light source 100 is incident on the light pipe and reflected in the light pipe for transmission, and the reflection angle is random, thereby improving the uniformity of the illumination light beam emitted from the light pipe.

For another example, the light homogenizing component 210 includes a fly-eye lens group, which is composed of two oppositely arranged fly-eye lenses, and the fly-eye lens is formed by a plurality of microlens arrays. Along the incident direction of the illumination light beam, the focus of the microlens in the first fly-eye lens coincides with the center of the corresponding microlens in the second fly-eye lens, and the optical axes of the microlenses in the two fly-eye lenses are parallel to each other. The light spot of the illumination light beam can be divided by the fly-eye lens group. In addition, the divided light spots can be accumulated by the subsequent lens assembly 220. In this way, the illumination light beam can be homogenized. It should be noted that the light homogenizing component 210 can also be arranged in the light source 100. For example, the light source 100 includes the light homogenizing component 210. In this case, the light homogenizing component 210 may not be required in the optical modulation assembly 200.

The lens assembly 220 may include a convex lens, such as a plano-convex lens, a biconvex lens, or a concave-convex lens (also known as a positive meniscus lens). The convex lens may be a spherical lens or an aspherical lens.

The prism assembly 250 can be a total internal reflection (Total Internal Reflection, TIR) prism assembly or a refractive total reflection (Refraction Total Internal Reflection, RTIR) prism assembly.

The light valve 240 may be a reflective light valve. The light valve 240 includes a plurality of reflective sheets, each of which may be used to form a pixel in the projection image. The light valve 240 may adjust the plurality of reflective sheets according to the image to be displayed, so that the reflective sheets corresponding to the pixels in the image that need to be displayed in a bright state reflect the light beam to the lens 300. The light beam reflected to the lens 300 is called a projection beam. In this way, the light valve 240 may modulate the illumination light beam to obtain a projection light beam, and realize the display of the projection image through the projection light beam.

In some embodiments, the light valve 240 can be a digital micromirror device (DMD). The digital micromirror device includes a plurality of (such as tens of thousands of) tiny reflective lenses that can be driven individually to rotate. These tiny reflective lenses can be arranged in an array. A tiny reflective lens (for example, each tiny reflective lens) corresponds to a pixel in the projection image to be displayed. The image signal can be converted into digital codes such as 0 and 1 after processing. In response to these digital codes, the tiny reflective lenses can swing. The duration of each tiny reflective lens in the on state and the off state is controlled to achieve the grayscale of each pixel in a frame of the image. In this way, the digital micromirror device can modulate the illumination light beam to achieve the display of the projection image.

The lens 300 includes a plurality of lens assemblies, which are usually divided into three sections of front group, middle group and rear group, or two sections of front group and rear group. The front group is a lens group close to the light-emitting side of the projection device 1000, and the rear group is a lens group close to the light-emitting side of the optical modulation component 200. The lens 300 can be a zoom lens, or a fixed-focus adjustable lens, or a fixed-focus lens. In some embodiments, the projection device 1000 can be an ultra-short-throw projection device, and the lens 300 can be an ultra-short-throw projection lens.

For ease of description, some embodiments of the present disclosure are mainly described by taking the projection device 1000 adopting a digital light processing (DLP) projection architecture and the light valve 240 being a digital micromirror device as an example. However, this should not be construed as a limitation of the present disclosure.

The laser 10 in some embodiments of the present disclosure is described in detail below.

Fig. 6 is a structural diagram of a laser according to some embodiments. Fig. 7 is an exploded diagram of the laser shown in Fig. 6 .

In some embodiments, as shown in FIG6 and FIG7, the laser 10 includes a base plate 101 and a frame body 102. The base plate 101 is plate-shaped. The base plate 101 includes a first end surface S1, a second end surface S2, and a plurality of third end surfaces S3. The first end surface S1 and the second end surface S2 are arranged along a third direction Z, and the first end surface S1 and the second end surface S2 are arranged oppositely. The plurality of third end surfaces S3 are respectively arranged between the first end surface S1 and the second end surface S2 to connect the first end surface S1 and the second end surface S2. The frame body 102 is frame-shaped. The frame body 102 includes a fourth end surface S4 and a fifth end surface S5, and the fourth end surface S4 and the fifth end surface S5 are arranged along a third direction Z, and the fourth end surface S4 and the fifth end surface S5 are arranged oppositely. Relative to the fifth end surface S5, the fourth end surface S4 is closer to the base plate 101. Relative to the second end surface S2, the first end surface S1 is closer to the frame body 102. The fourth end surface S4 and the fifth end surface S5 are respectively annular. The frame body 102 further includes an inner wall S6 and an outer wall S7. The inner wall S6 and the outer wall S7 are respectively disposed between the fourth end surface S4 and the fifth end surface S5 to connect the fourth end surface S4 and the fifth end surface S5.

One end of the frame 102 (e.g., the end close to the base plate 101) is fixedly connected to the base plate 101. For example, the fourth end surface S4 of the frame 102 is fixedly connected to the first surface S1 of the base plate 101. Here, the structure composed of the frame 102 and the base plate 101 can be called a tube shell or a base. As shown in Figure 6, the frame 102 and the base plate 101 enclose a containing space 112, and the laser 10 also includes a plurality of light-emitting chips 103. The plurality of light-emitting chips 103 are respectively located in the containing space 112. The frame 102 and the plurality of light-emitting chips 103 are respectively arranged on the base plate 101, and the frame 102 surrounds the plurality of light-emitting chips 103.

As shown in FIG. 7 , the frame 102 further includes a fixing notch 1020. The fixing notch 1020 is provided at one end of the frame 102 close to the bottom plate 101. As shown in FIG. 6 and FIG. 7 , the laser 10 further includes a pin assembly 104. The pin assembly 104 is connected to the frame 102 via the fixing notch 1020. The pin assembly 104 is connected to the bottom plate 101 , and the pin assembly 104 corresponds to the fixing notch 1020 . The pin assembly 104 is also fixedly connected to the bottom plate 101 .

In some embodiments, the laser 10 includes a plurality of pin assemblies 104, and the frame 102 includes a plurality of fixing notches 1020. The plurality of pin assemblies 104 correspond to the plurality of fixing notches 1020. For example, as shown in FIGS. 6 and 7 , the laser 10 includes two pin assemblies 104, and the frame 102 includes two fixing notches 1020.

Fig. 8 is a schematic diagram of a pin assembly according to some embodiments. As shown in Fig. 6 and Fig. 8, the pin assembly 104 includes an insulator 1041 and a plurality of electrode pins 1042. The plurality of electrode pins 1042 are fixedly connected to the insulator 1041, respectively.

The insulator 1041 is configured to carry the electrode pins 1042 and isolate the electrode pins 1042 from other components to prevent other components from affecting the conductive effect of the electrode pins 1042. For example, the insulator 1041 isolates the electrode pins 1042 from the base plate 101, or isolates the electrode pins 1042 from the frame 102, or isolates each electrode pin 1042.

As shown in FIG8 , the insulator 1041 includes a first sub-insulator 10411, a second sub-insulator 10412, and a third sub-insulator 10413. The first sub-insulator 10411 is located in the accommodation space 1012, the second sub-insulator 10412 is located outside the accommodation space 1012, and the third sub-insulator 10413 is located between the first sub-insulator 10411 and the second sub-insulator 10412. The first sub-insulator 10411, the third sub-insulator 10413, and the second sub-insulator 10412 are arranged along the extension direction of the electrode pin 1042 (i.e., the first direction X), and the surface of the third sub-insulator 10413 close to the bottom plate 101 is flush with the end surface of the frame 102 close to the bottom plate 101 (e.g., the fourth end surface S4). When the pin assembly 104 and the frame 102 are assembled, the third sub-insulator 10413 is covered by the frame 102, and the width M1 (as shown in FIG. 8 ) of the third sub-insulator 10413 may be the same as the thickness of the frame 102. The thickness of the frame 102 may refer to the distance between the inner wall S4 and the outer wall S5 along the first direction X or the second direction Y.

As shown in FIG8 , the third sub-insulator 10413 includes a first connecting portion 10414. The first connecting portion 10414 refers to the portion of the third sub-insulator 10413 that protrudes toward the third direction Z relative to the first sub-insulator 10411 and the second sub-insulator 10412. In this way, the insulator 1041 is T-shaped. The target cross-section of the pin assembly 104 is T-shaped, and the target cross-section can be parallel to the arrangement direction of the first sub-insulator 10411 and the second sub-insulator 10412, that is, the target cross-section is parallel to the first direction X. In addition, as shown in FIG8 , the first connecting portion 10414 is a rectangular parallelepiped. Of course, the first connecting portion 10414 can also be in other shapes, such as a pyramid, a prism or other shapes, which is not limited in the present disclosure. Here, the third direction Z can be perpendicular to the first direction X and the second direction Y.

The above description uses the example that the third sub-insulator 10413 protrudes in the third direction Z relative to the first sub-insulator 10411 and the second sub-insulator 10412. Of course, the surface of the third sub-insulator 10413 away from the base plate 101 may also be flush with the surface of the first sub-insulator 10411 and the second sub-insulator 10412 away from the base plate 101, and the present disclosure does not limit this.

Multiple electrode pins 1042 are spaced apart from each other. As shown in FIG6 , the pin assembly 104 extends along the second direction Y, and the second direction Y is the length direction of the pin assembly 104. Each electrode pin 1042 of the multiple electrode pins 1042 includes a first conductive layer 10421 and a second conductive layer 10422. The first conductive layer 10421 is located in the accommodation space 112. The second conductive layer 10422 is located outside the accommodation space 112. The first conductive layer 10421 and the second conductive layer 10422 are arranged along the first direction X, and the first conductive layer 10421 and the second conductive layer 10422 are electrically connected. The first conductive layer 10421 is electrically connected to the light emitting chip 103, and the second conductive layer 10422 is electrically connected to the external circuit, so that the current of the external circuit can be transmitted to the light emitting chip 103 through the electrode pin 1042, so that the light emitting chip 103 emits laser under the action of the current. For example, the first conductive layer 10421 and the second conductive layer 10422 are pads, respectively. The second direction Y can be the first direction X.

In some embodiments, as shown in FIG. 6 , in the second direction Y, the length of the first conductive layer 10421 is greater than the length of the second conductive layer 10422 , so that when the plurality of light emitting chips 103 are arranged in multiple rows, the first conductive layer 10421 is connected to the plurality of light emitting chips 103 .

In some embodiments, as shown in FIG8 , the first conductive layer 10421 is fixedly connected to the first sub-insulator 10411, and the second conductive layer 10422 is fixedly connected to the second sub-insulator 10412. For example, the first conductive layer 10421 is located on a side of the first sub-insulator 10411 away from the bottom plate 101, and the second conductive layer 10422 is located on a side of the second sub-insulator 10412 away from the bottom plate 101. In this way, it is convenient to respectively set wires on the first conductive layer 10421 and the second conductive layer 10422.

In some embodiments, as shown in FIG6 , each first conductive layer 10421 is arranged in sequence along the second direction Y, and each second conductive layer 10422 is also arranged in sequence along the second direction Y. The first conductive layers 10421 of each electrode pin 1042 are spaced apart from each other, and the second conductive layers 10422 in each electrode pin 1042 are also spaced apart from each other to avoid mutual interference of currents transmitted by different electrode pins 1042. For example, as shown in FIG8 , the insulator 1041 further includes a spacing gap 1043. The spacing gap 1043 is provided between adjacent first conductive layers 10421, and the spacing gap 1043 is configured to space different first conductive layers 10421. Alternatively, at least a portion of the insulator 1041 is provided between adjacent first conductive layers 10421 to space different first conductive layers 10421 by insulating material.

In some embodiments, the spacing of each second conductive layer 10422 may be the same as the spacing of each first conductive layer 10421. For example, as shown in FIG. 8 , spacing gaps 1043 are also provided between adjacent second conductive layers 10422. The spacing between each second conductive layer 10422 is achieved by the spacing gaps 1043, or the spacing between the second conductive layers 10422 may also be achieved by insulating materials. This is not limiting.

It should be noted that, for each electrode pin 1042, the height of the first conductive layer 10421 and the height of the second conductive layer 10422 may be the same or different. Assuming that the end surface of the pin assembly 104 close to the base plate 101 is coplanar with the first end surface S1 of the base plate 101, as shown in FIG8, the height of the first conductive layer 10421 refers to the first distance D1 between the first conductive layer 10421 and the base plate 101. The height of the second conductive layer 10422 refers to the second distance D2 between the second conductive layer 10422 and the base plate 101. FIG8 is taken as an example in which the second distance D2 is greater than the first distance D1 (D2>D1). At this time, the second conductive layer 10422 is higher than the first conductive layer 10421. Of course, the second distance D2 may also be less than or equal to the first distance D1 (D2≤D1), at which time, the height of the second conductive layer 10422 is the same as the height of the first conductive layer 10421, or the second conductive layer 10422 is lower than the first conductive layer 10421.

In some embodiments, the pin assembly 104 can be fixedly connected to the frame 102 and the pin assembly 104 can be fixedly connected to the base plate 101 at least through the third sub-insulator 10413. For example, the side of the third sub-insulator 10413 away from the base plate 101 is fixedly connected to the frame 102, and the side of the third sub-insulator 10413 close to the base plate 101 is fixedly connected to the base plate 101. Here, the fixed connection between the insulator 1041 and the base plate 101 and the frame 102 can be achieved by solder. At this time, the side of the first sub-insulator 10411 and the second sub-insulator 10412 close to the bottom plate 101 may be flush with the side of the third sub-insulator 10413 close to the bottom plate 101 and contact the bottom plate 101, or the side of the first sub-insulator 10411 and the second sub-insulator 10412 close to the bottom plate 101 may not be flush with the side of the third sub-insulator 10413 close to the bottom plate 101, and there is a certain distance between the bottom plate 101, and the present disclosure does not limit this. It should be noted that any part of the insulator 1041 is fixedly connected to the bottom plate 101 or the frame 102, which may refer to the connection between the any part and the bottom plate 101 or the frame 102 through solder.

In some embodiments, the surfaces of the first sub-insulator 10411, the second sub-insulator 10412, and the third sub-insulator 10413 close to the bottom plate 101 can be flush and fixedly connected to the bottom plate 101, respectively, so that each position of the pin assembly 104 can be supported by the bottom plate 101. When the first conductive layer 10421 and the second conductive layer 10422 are wired, the bottom plate 101 has a supporting function, which can improve the pressure bearing capacity of the pin assembly 104, avoid the pin assembly 104 from being damaged under the pressure applied by the wire bonding device, and improve the welding firmness of the wire to the first conductive layer 10421 and the second conductive layer 10422. Therefore, the success rate of wire bonding and the fixing effect of the wire can be improved, and the preparation yield of the laser 10 can be improved.

In some embodiments, as shown in FIG7 , the laser 10 further includes a solder assembly 105, a portion of which is located between the pin assembly 104 and the frame 102, and another portion of which is located between the pin assembly 104 and the base plate 101. The pin assembly 104 is fixedly connected to the frame 102 and the base plate 101 by the solder assembly 105. Here, the solder assembly 105 can be prepared in advance, and the shape of the solder assembly 105 can be fixed in advance. The solder assembly 105 can be sleeved on the pin assembly 104 to cover a portion of the surface of the pin assembly 104. For example, the solder assembly 105 covers the surface of the third sub-insulator 10413. Afterwards, the pin assembly 104 sleeved with the solder assembly 105 is matched (e.g., clamped) with the corresponding fixing notch 1020, so that the pin assembly 104 is fixedly connected to the frame 102 and the base plate 101.

In some embodiments, the pin assembly 104 may be in a strip shape, the length direction of the pin assembly 104 may be the second direction Y, and the width direction of the pin assembly 104 may be the first direction X. The width of the pin assembly 104 may be related to the thickness of the frame 102, and the thicker the frame 102 is, the wider the pin assembly 104 is. For example, if the thickness of the frame 102 is approximately 1 mm, the width range of the pin assembly 104 is 1.5 mm to 3 mm, for example, the width of the pin assembly 104 is approximately 2 mm. In the second direction Y, the length of the pin assembly 104 (e.g., the second length L2 in FIG. 8) is less than or equal to the length of the frame 102 (e.g., the first length L1 in FIG. 7). Here, in the second direction Y, the length of the frame 102 may refer to the distance between the two farthest points of the frame 102 in the second direction Y. The straight line connecting the two points is parallel to the first direction X. For example, as shown in FIG. 7, the first length L1 may be the distance between two points on the outer wall S7 along the second direction Y.

Since the pin assembly 104 matches (e.g., snaps into) the fixing notch 1020, the length of the pin assembly 104 is equal to the length of the fixing notch 1020 in the second direction Y. Since along the second direction Y, the length of the pin assembly 104 is equal to the length of the frame 102, and the length of the pin assembly 104 is less than the length of the frame 102, corresponding to different fixed connection situations of the pin assembly 104 and the frame 102, the shape of the solder assembly 105 will also be different.

When the length of the pin assembly 104 is equal to the length of the frame 102 along the second direction Y, since the frame 102 has a certain thickness, a portion of the pin assembly 104 close to the accommodating space 112 is also fixed to the frame 102 in addition to the third sub-insulator 10413 .

FIG9 is a structural diagram of another pin assembly according to some embodiments. For example, as shown in FIG9 , the pin assembly 104 further includes two extensions 10415. The two extensions 10415 are respectively provided at two ends of the first sub-insulator 10411 in the second direction Y, and the extensions 10415 are fixedly connected to the frame 102. The extensions 10415 are covered by the inner wall S6 and the outer wall S7 of the frame 102. In this way, the phase in the insulator 10411 is The structure of the third sub-insulator 10413 close to the accommodating space 1012 includes a first sub-insulator 10411 and two extending portions 10415 .

In some embodiments, no conductive layer is provided on the extension 10415, and the extension 10415 is only fixedly connected to the frame 102. The shape of the solder assembly 105 in this case is shown in FIG7. At this time, as shown in FIG7 and FIG9, the solder assembly 105 can cover the surface of the third sub-insulator 10413 in the pin assembly 104 away from the bottom plate 101, the surface of the two extensions 10415 away from the bottom plate 101, the surface of the extension 10415 away from the third sub-insulator 10413, and the surface of the pin assembly 104 close to the bottom plate 101.

FIG. 10 is a structural diagram of a frame according to some embodiments. FIG. 11 is a stereoscopic diagram of a solder assembly according to some embodiments. In other examples, along the second direction Y, the length of the pin assembly 104 is less than the length of the frame 102. In this case, as shown in FIG. 10 , along the second direction Y, the third length L3 of the fixing notch 1020 is less than the first length L1 of the frame 102. In this case, the pin assembly 104 may be as shown in FIG. 8 , in which case the pin assembly 104 does not include the extension 10415, and the pin assembly 104 may be fixed to the frame 102 only by the third sub-insulator 10413. The shape of the solder assembly 105 is shown in FIG. 11 , and the solder assembly 105 may cover the surface of the third sub-insulator 10413 in the pin assembly 104 away from the base plate 101, the side of the third sub-insulator 10413 in the second direction Y, and the surface of the pin assembly 104 close to the base plate 101.

Fig. 12 is a perspective view of another solder assembly according to some embodiments. In some embodiments, as shown in Fig. 12, the solder assembly 105 can cover the surface of the third sub-insulator 10413 in the pin assembly 104 that is away from the base plate 101, the side of the third sub-insulator 10413 in the second direction Y, and the surface of the third sub-insulator 10413 that is close to the base plate 101. The surface of the third sub-insulator 10413 that is away from the base plate 101 and the surface of the third sub-insulator 10413 that is close to the base plate 101 can have the same shape and area.

In some embodiments, the frame 102 is rectangular, and the frame 102 includes four side walls. As shown in FIG7 , the frame 102 includes a first side wall 1031, a second side wall 1032, a third side wall 1033, and a fourth side wall 1034. The first side wall 1031 and the second side wall 1032 are arranged along the first direction X, and the first side wall 1031 and the second side wall 1032 are arranged opposite to each other. The third side wall 1033 and the fourth side wall 1034 are arranged along the second direction Y, and the third side wall 1033 and the fourth side wall 1034 are arranged opposite to each other. The frame 102 includes two fixing notches 1020, which are arranged at the ends of the first side wall 1031 and the second side wall 1032 close to the bottom plate 101, and the two pin assemblies 104 are matched with the two fixing notches 1020 (e.g., clamped) respectively to be fixedly connected with the first side wall 1031 and the second side wall 1032.

It should be noted that the electrode pin 1042 in one of the two pin assemblies 104 can be used as a positive pin, and the second conductive layer 10422 in the electrode pin 1042 is used to connect the positive pole of the external circuit; the electrode pin 1042 in the other pin assembly 104 of the two pin assemblies 104 can be used as a negative pin, and the second conductive layer 10422 in the electrode pin 1042 is used to connect the negative pole of the external circuit.

The foregoing description is based on the example that the laser 10 includes two pin assemblies 104, and each pin assembly 104 includes two electrode pins 1042. Of course, the pin assembly 104 may also include three or more electrode pins 1042, which is not limited in the present disclosure. FIG. 13 is a structural diagram of another frame according to some embodiments. For example, the laser 10 includes four pin structures 104. In this case, as shown in FIG. 13, fixed notches 1020 are respectively provided on the four side walls of the frame 102. The solder assembly 105 adapted to the frame 102 shown in FIG. 13 is the solder assembly 105 shown in FIG. 11.

For the frame 102 in FIG. 10 and FIG. 13 , the fixing notch 1020 is located at one end of the frame 102 close to the bottom plate 101, and there is no other structure between the fixing notch 1020 and the bottom plate 101. For this frame 102, the pin assembly 104 is not only fixed to the frame 102, but also needs to be fixed to the bottom plate 101. In this case, the surface of the pin assembly 104 close to the bottom plate 101 can be flush with the end surface of the frame 102 close to the bottom plate 101.

In addition, the above mainly describes the example that the fixing notch 1020 is located at one end of the frame 102 close to the bottom plate 101, and the fixing notch 1020 is directly connected to the bottom plate 101. Of course, the fixing notch 1020 can also be located in the middle area of the frame 102, and the frame 102 can also include a portion located between the fixing notch 1020 and the bottom plate 101, and a portion located on one side of the fixing notch 1020 away from the bottom plate 101.

FIG14 is a structural diagram of another frame according to some embodiments. For example, as shown in FIG14, the frame 102 includes a transition ring 1021, a target side wall 1022 and a sealing ring 1023. The transition ring 1021, the target side wall 1022 and the sealing ring 1023 are arranged in sequence in a direction away from the base plate 101, and the fixed notch 1020 is located in the target side wall 1022. The transition ring 1021 is arranged on the base plate 101 and is configured to buffer stress. The target side wall 1022 is arranged on the transition ring 1021, and the sealing ring 1023 is configured to close the fixed notch 1020 and is fixedly connected to the frame 102. For example, the fixed notch 1020 is located at one end of the target side wall 1022 away from the base plate 101. It should be noted that FIG. 13 illustrates an example in which the target sidewalls 1022 of the four sidewalls respectively have the fixed notches 1020 . Of course, there may be a target sidewall 1022 of a sidewall that does not have the fixed notch 1020 , and the present disclosure does not limit this.

For this type of frame 102, the pin assembly 104 can be fixed to the frame 102 only by using the sealing ring 1023, and the solder assembly 105 can only wrap the surface of the sealing ring 1023. The solder assembly 105 adapted to the frame 102 shown in FIG. 14 is the same as the solder assembly 105 in FIG. 12. When assembling the frame 102 and the pin assembly 104, the transition ring 1021 can be first fixedly connected to the target side wall 1022, and then the pin assembly 104 and the solder assembly can be placed in the fixed notch 1020, and then the sealing ring 1023 can be assembled. Alternatively, the transition ring 1021, the target side wall 1022 and the sealing ring 1023 can be fixed first, and then the pin assembly 104 and the solder assembly 105 can be matched with the fixed notch 1020 (e.g., snap-fitted).

In some embodiments, the materials of the bottom plate 101, the transition ring 1021, the target side wall 1022 and the sealing ring 1023 may include metals, respectively, and the material of the insulator 1041 may be ceramics. For example, the material of the bottom plate 101 is oxygen-free copper, the material of the transition ring 1021 may be No. 10 steel, and the target side wall 1022 and the sealing ring 1023 may be Kovar alloys, such as 4J29 alloy. Since the expansion coefficients of oxygen-free copper and ceramics are quite different, if direct welding generates a large stress, and the expansion coefficients of No. 10 steel and Kovar alloys are between oxygen-free copper and ceramics, the transition ring 1021 is provided between the bottom plate 101 and the pin assembly 104, and the material of the target side wall 1022 is Kovar alloy, which can be used for stress buffering transition, avoiding ceramic cracks caused by direct fixation of the bottom plate 101 and the pin assembly 104, and can improve the manufacturing reliability of the laser.

In some embodiments of the present disclosure, when preparing the laser 10, the pin assembly 104 can be fixedly connected (e.g., brazed) to the fixing notch 1020. For example, each pin assembly 104 is matched (e.g., snap-fitted) to the corresponding fixing notch 1020, and solder is provided between the pin assembly 104 and the corresponding fixing notch 1020. After the pin assembly 104 is matched to the corresponding fixing notch 1020, the frame 102 is placed on the base plate 101, and solder is provided between the pin assembly 104 and the base plate 101, and solder is provided between the fourth end surface S4 of the frame 102 and the base plate 101. Afterwards, the structure consisting of the base plate 101, the frame 102, the pin assembly 104 and the solder is placed in a high-temperature furnace for sintering to melt the solder, thereby fixing the pin assembly 104 to the corresponding fixing notch 1020, and fixing the pin assembly 104 and the frame 102 to the base plate 101 respectively, and achieving sealing of each connection between the base plate 101, the frame 102 and the pin assembly 104.

In this way, the base plate 101, the frame 102 and the pin assembly 104 enclose the accommodation space 112. After the base plate 101, the frame 102 and the pin assembly 104 are fixed respectively, the light emitting chip 103 can be arranged in the accommodation space 112. Afterwards, wires can be arranged between the first conductive layer 10421 and the light emitting chip 103 close to the first conductive layer 10421, and wires can be arranged between each light emitting chip 103.

For example, the wire is fixed on the first conductive layer 10421 and the light-emitting chip 103 by a ball bonding process. When the wire is welded by the ball bonding process, one end of the wire is melted by a wire bonding device, and the melted end is pressed on the object to be connected. The wire bonding device can release ultrasonic waves to speed up the completion of the fixation of the wire and the object to be connected. For example, the wire is a gold wire. It should be noted that the number of wires between any two components connected by wires in the laser 10 can be multiple, so as to increase the reliability of the connection between the components and reduce the square resistance on the wire. For example, the first conductive layer 10421 and the light-emitting chip 103, and adjacent light-emitting chips 103 can be connected by multiple wires.

In some embodiments of the present disclosure, when preparing the laser 10, it is not necessary to fix each electrode pin 1042 with the frame 102 separately, and it is only necessary to fix the pin assembly 104 with the frame 102, so that multiple electrode pins 1042 can be fixedly connected with the frame 102, simplifying the process of fixing the electrode pins 1042. And because the contact area between the pin assembly 104 and the frame 102 is larger than the contact area between a single electrode pin 1042 and the frame 102, the reliability of the fixed connection of the electrode pin 1042 can be improved, thereby improving the reliability of the laser 10. In addition, since assembly errors will occur during the assembly process of each component, and the electrode pins 1042 of the laser 10 of some embodiments of the present disclosure do not need to be fixedly connected separately, the number of assembly times is reduced, and therefore, the errors caused by the separate fixed connection of each electrode pin 1042 can be avoided, thereby improving the accuracy of the fixed position of the electrode pin 1042. In addition, the higher the accuracy of the fixed position of the electrode pin 1042, the higher the precision and quality of the wire bonding on the electrode pin 1042. Therefore, the reliability of the wire connection in the laser 10 can be improved and the difficulty of wire bonding can be reduced.

In summary, in the laser 10 provided in some embodiments of the present disclosure, the laser 10 includes a pin assembly 104, which includes an insulator 1041 and a plurality of electrode pins 1042, and the pin assembly 104 is equivalent to an integrated structure of the plurality of electrode pins 1042. In this way, when preparing the laser 10, only one pin assembly 104 needs to be fixedly connected to the frame 102 to achieve the fixed connection of the plurality of electrode pins 1042, and there is no need to separately fix each electrode pin 1042 to the frame 102, which can simplify the preparation process of the laser 10.

The following is an example of the connection between the light emitting chip 103 and the pin assembly 104 in combination with the arrangement of the plurality of light emitting chips 103 .

A plurality of light-emitting chips 103 may be arranged in multiple rows and columns. Here, the row direction of the light-emitting chip 103 may be a first direction X, and the column direction of the light-emitting chip 103 may be a second direction Y. FIG6 and FIG7 respectively illustrate the case where the laser 10 includes 10 light-emitting chips 103 arranged in two rows and five columns. Of course, the light-emitting chips 103 may also be arranged in other ways, and the number of light-emitting chips 103 may also be other numbers, which is not limited in the present disclosure. For example, the laser 10 includes 14 light-emitting chips 103 arranged in two rows and seven columns, or includes 15 light-emitting chips 103 arranged in three rows and five columns, or includes 21 light-emitting chips 103 arranged in three rows and seven columns. Here, the spacing between two adjacent rows of light-emitting chips 103 may range from 3.5 mm to 6.5 mm, such as, the spacing between two adjacent rows of light-emitting chips is 4 mm or 6 mm. In this case, since the spacing between two adjacent rows of light-emitting chips is small. In this way, in some embodiments of the present disclosure, the laser 10 includes 14 light-emitting chips 103 arranged in two rows and seven columns. More light-emitting chips 103 can be arranged to increase the light-emitting power of the laser 10 .

It should be noted that the adjacent light-emitting chips 103 in each row of light-emitting chips 103 are connected by wires to realize the series connection of the light-emitting chips 103 in the row. The light-emitting chips 103 in each row can be connected to the positive and negative electrodes of the external circuit through the two electrode pins 1042. For example, the two ends of the light-emitting chips 103 in each row are respectively connected to one electrode pin 1042 in the two pin assemblies 104 in the first direction X. The two ends of the light-emitting chips 103 in each row are respectively connected to two electrode pins 1042. For example, and along the first direction X, the light-emitting chip 103 at one end is connected to the first conductive layer 10421 of an electrode pin 1042 in the pin assembly 104 at the one end through a wire, and the light-emitting chip 103 at the other end is connected to the first conductive layer 10421 of an electrode pin 1042 at the other end through a wire.

In some embodiments, the laser 10 may include a monochromatic laser, and each light-emitting chip 103 emits a laser of the same color. Alternatively, the laser 10 may also include a multicolor laser. In this case, the multiple light-emitting chips 103 include multiple types of light-emitting chips 103, each type of light-emitting chip 103 is used to emit a laser of one color, and different types of light-emitting chips 103 are used to emit lasers of different colors. For example, the laser 10 includes two types of light-emitting chips 103, as shown in FIG6, and the two rows of light-emitting chips 103 are two types of light-emitting chips. Of course, the laser 10 may also include three types of light-emitting chips 103, and the three types of light-emitting chips 103 are used to emit red laser, green laser and blue laser respectively. Alternatively, the laser 10 may also include more than three types of light-emitting chips 103, and the laser colors emitted by the multiple types of light-emitting chips 103 may also be other colors besides red, green and blue, which is not limited in the present disclosure.

The following description is made by taking the example of the laser 10 shown in FIG6 including three types of light-emitting chips 103 and two pin assemblies 104. As shown in FIG6, at least one row of light-emitting chips 103 in the two rows of light-emitting chips 103 may include at least two types of light-emitting chips 103. Each type of light-emitting chip 103 in the three types of light-emitting chips 103 may be connected in series, and an electrode pin 1042 is connected to each end of each type of light-emitting chip 103. Since the two pin assemblies 104 include only four electrode pins 1042, different types of light-emitting chips 103 in the three types of light-emitting chips 103 may share an electrode pin 1042, such as different types of light-emitting chips 103 in the three types of light-emitting chips 103 share one positive pin or one negative pin. The four electrode pins 1042 in the two pin assemblies 104 may include one positive pin and three negative pins, or one negative pin and three positive pins. Alternatively, the laser 10 may include six electrode pins 1042 , and each pin assembly 104 may include three electrode pins 1042 , so that the two electrode pins 1042 connected to the three types of light-emitting chips 103 are different. In this case, different types of light-emitting chips 103 do not share electrode pins 1042 .

The above description takes the example that the laser 10 includes two pin assemblies 104. Of course, the laser 10 may also include three pin assemblies 104 or four pin assemblies 104. Accordingly, the frame 102 includes three fixing notches 1020, and the three fixing notches 1020 are respectively located on the three side walls of the frame 102. Alternatively, the frame 102 includes four fixing notches 1020, and the four fixing notches 1020 are respectively located on the four side walls of the frame 102.

When the laser 10 includes more pin assemblies 104, it is possible to avoid different types of light-emitting chips 103 in the laser 10 sharing electrode pins 1042. When sharing electrode pins, since the position of the light-emitting chip 103 may be far away from the position of the electrode pin 1042 to be connected, it is usually necessary to use a switching table for circuit switching, resulting in more structures in the laser 10 and complex wiring. In the laser 10 provided in some embodiments of the present disclosure, more pin assemblies 104 can be provided to avoid the light-emitting chip 103 sharing electrode pins 1042, so that the use of the switching table can be reduced, the structure of the laser 10 can be simplified, and the complexity of the wiring in the laser 10 can be reduced.

The following description takes the case where the laser 10 includes a multicolor laser, and the multicolor laser includes at least three types of light-emitting chips 103 and at least three pin assemblies 104 as an example. When the laser 10 includes at least three pin assemblies 104, the length of each pin assembly 104 may be less than the length of the side wall corresponding to the pin assembly 104.

In some embodiments, at least some of the light-emitting chips 103 in each type of light-emitting chip 103 are connected in series, and the two ends are electrically connected to the two electrode pins 1042 respectively, and the light-emitting chips 103 of different types are electrically connected to different electrode pins 1042 respectively. The at least three types of light-emitting chips 103 can be arranged in at least three rows. For example, each row of light-emitting chips includes one type of light-emitting chips, and each row of light-emitting chips is connected in series and the two ends are respectively connected to the two electrode pins 1042. The number of rows of light-emitting chips 103 can be the same as the number of types of light-emitting chips 103, and the light-emitting chips 103 in different rows are light-emitting chips 103 of different types, or the number of rows of light-emitting chips 103 can be greater than the number of types of light-emitting chips 103, such as two rows of light-emitting chips 103 are the same type of light-emitting chips 103. Alternatively, the number of rows of light-emitting chips 103 can be less than the number of types of light-emitting chips 103, such as there are two types of light-emitting chips 103 located in the same row, and the same type of light-emitting chips 103 located in the same row are connected in series, and the two ends are respectively electrically connected to the two electrode pins 1042.

When the laser 10 includes three pin assemblies 104, two of the three pin assemblies 104 can be located in the row direction of the light-emitting chip 103, and the two pin assemblies 104 are respectively fixedly connected to two opposite side walls (such as the first side wall 1031 and the second side wall 1032) of the frame 102 in the row direction, and the other pin assembly 104 is located in the column direction of the light-emitting chip 103, and the other pin assembly 104 is fixedly connected to one of the two side walls arranged in the column direction (such as the third side wall 1033 or the fourth side wall 1034).

It should be noted that the number of electrode pins 1042 in each pin assembly 104 in the row direction can be equal to the number of rows of light-emitting chips 103. In this way, electrode pins 1042 are respectively provided at both ends of each row of light-emitting chips 103, so that after each row of light-emitting chips 103 are connected in series, the light-emitting chips 103 at both ends can be directly connected to the electrode pins 1042 in the pin assembly 104 in the row direction. This connection method is more convenient. In this method, the two electrode pins 1042 connected to each row of light-emitting chips 103 belong to two pin assemblies 104 in the row direction, that is, the electrode pin 1042 connected to one end of each row of light-emitting chips 103 belongs to one pin assembly 104 in the row direction, and the electrode pin 1042 connected to the other end belongs to another pin assembly 104 in the row direction.

The number of electrode pins 1042 in the pin assembly 104 in the column direction may be greater than or equal to 2. For example, a row of light-emitting chips 1030 located at the edge in the column direction (a row of light-emitting chips 1030 that is closest to or farthest from the pin assembly 104 in the column direction among multiple rows of light-emitting chips 103) may be electrically connected to the electrode pins 1042 in the pin assembly 104 in the column direction that the row of light-emitting chips 1030 is close to, that is, the two electrode pins electrically connected to the row of light-emitting chips 103 respectively belong to the pin assembly 104 in the column direction. For example, a row of light-emitting chips 103 includes two types of light-emitting chips 103, and the first type of light-emitting chip 103 and the second type of light-emitting chip 103 are respectively located at the two ends of the row, and each type of light-emitting chip 103 is connected in series. Then, the light-emitting chip farthest from the second type of light-emitting chip 103 in the first type of light-emitting chip 103 can be connected to the electrode pin 1042 in the pin assembly 104 in the row direction, and the light-emitting chip 103 closest to the second type of light-emitting chip 103 in the first type of light-emitting chip 103 can be connected to the electrode pin 1042 in the pin assembly 104 in the column direction.

Since the light emitting chip 103 located at the edge in the column direction may be far away from the pin assembly 104 in the column direction, in some embodiments of the present disclosure, a transfer platform may be further provided between the light emitting chip 103 and the pin assembly 104 to transfer the wires between the light emitting chip 103 and the pin assembly 104 through the transfer platform.

When a row of light-emitting chips 103 located at the edge is electrically connected to the electrode pins 1042 in the pin assembly 104 in the column direction, the number of electrode pins 1042 in the pin assembly 104 in the row direction can be reduced, and the length of the pin assembly 104 can be reduced. In this way, the pin assemblies 104 fixedly connected to each side wall can be smaller, and since the volume of the pin assembly 104 is reduced, the stress generated when the pin assembly 104 is fixed to the frame 102 can be reduced. Therefore, the stress when the pin assembly 104 is fixedly connected to the frame 102 can be smaller, so that the pin assembly 104 and the frame 102 are easily fixedly connected.

In some embodiments, the pin assembly 104 in the row direction can be the same as the pin assembly 104 in the column direction, for example, the pin assembly 104 in the row direction has the same length as the pin assembly 104 in the column direction, and the number of electrode pins 1042 included is also the same. In this way, when preparing the laser 10, only one structure of the pin assembly 104 needs to be provided, and when the pin assembly 104 is fixedly connected to the frame 102, it is not necessary to distinguish the pin assembly 104 used according to the different fixed positions in the frame 102, which facilitates the preparation of the laser 10. In addition, in the tube shell after the base plate 101, the frame 102 and the pin assembly 104 are assembled, the arrangement of the light-emitting chip 103 can be more flexible, which can improve the versatility and compatibility of the tube shell.

In other embodiments, since the pin assembly 104 in the column direction only needs to include two electrode pins 1042 to meet the requirements, the length of the pin assembly 104 can be relatively small, and the number of electrode pins 1042 in the pin assembly 104 can be less than the number of electrode pins 1042 in the pin assembly 104 in the row direction. In the case where the material of the pin assembly 104 is ceramic and the material of the frame 102 is metal, a certain stress will be generated when the pin assembly 104 is fixedly connected to the frame 102, and since the length of the pin assembly 104 is relatively small, the stress can be reduced and the reliability of the fixed connection can be improved.

In some embodiments, the width direction of the frame 102 in the laser 10 may be parallel to the row direction of the light emitting chips 103, and the length direction of the frame 102 may be parallel to the column direction of the light emitting chips 103. In this way, more rows of light emitting chips 103 may be arranged in the laser 10, and different types of light emitting chips 103 may be located in different rows, which facilitates the connection of wires.

FIG15 is another structural diagram of a laser according to some embodiments. As shown in FIG15 , the laser 10 includes three types of light-emitting chips 103. The three types of light-emitting chips 103 are arranged in three rows, and each row of light-emitting chips 103 includes one type of light-emitting chip 103. As shown in FIG15 , the laser 10 includes three pin assemblies 104, and the three pin assemblies 104 include a first sub-pin assembly 104A, a second sub-pin assembly 104B, and a third sub-pin assembly 104C. Two of the three pin assemblies 104 are fixedly connected to two side walls of the frame 102 that are opposite to each other in the first direction X, and the other pin assembly 104 is fixedly connected to a side wall between the two side walls.

Here, at least three pin assemblies 104 include two first pin assemblies (e.g., the second sub-pin assembly 104B and the third sub-pin assembly 104C) and at least one second pin assembly (e.g., the first sub-pin assembly 104A). They are arranged relatively along the row direction of the plurality of light-emitting chips, the number of electrode pins in any one of the two first pin assemblies is equal to the number of rows of the plurality of light-emitting chips, and the at least one second pin assembly is located at least on one side in the column direction of the plurality of light-emitting chips.

FIG16 is another structural diagram of a laser according to some embodiments. As shown in FIG16 , the laser 10 includes four pin assemblies 104, which are respectively a first sub-pin assembly 104A, a second sub-pin assembly 104B, a third sub-pin assembly 104C, and a fourth sub-pin assembly 104D. The first sub-pin assembly 104A, the second sub-pin assembly 104B, the third sub-pin assembly 104C, and the fourth sub-pin assembly 104D. The fourth sub-pin assembly 104D is fixed to the four side walls of the frame 102. FIG. 15 and FIG. 16 respectively take the pin assemblies 104 in the laser 10 as examples that are respectively the same and each pin assembly 104 includes three electrode pins 1042. Each row of light-emitting chips 103 is connected in series, and both ends are respectively connected to the electrode pins 1042 in the pin assembly 104 in the row direction. For example, both ends of the light-emitting chips 103 in each row are respectively electrically connected to the first conductive layer 10421 in the electrode pin 1042. Here, the pin assembly 104 in the column direction may also include only two electrode pins 1042.

Fig. 17 is another structural diagram of a laser according to some embodiments. As shown in Fig. 17, the laser 10 further includes a transfer platform 1040, the first row of light-emitting chips 1044 are connected in series, and the two ends of the first row of light-emitting chips 1044 are electrically connected to the two electrode pins 1042 of the first sub-pin assembly 104A through the transfer platform 1040.

FIG. 18 is another structural diagram of a laser according to some embodiments. In other embodiments, as shown in FIG. 18 , the third row of light-emitting chips 1046 are connected in series, and the two ends of the third row of light-emitting chips 1046 are respectively connected to the two electrode pins 1042 of the fourth sub-pin assembly 104D through the adapter 1040. As shown in FIG. 17 and FIG. 18 , the two ends of any row of light-emitting chips (e.g., the second row of light-emitting chips 1045) located in the middle in the column direction are respectively connected to the electrode pins 1042 in the two pin assemblies 104 in the row direction (e.g., the second sub-pin assembly 104B and the third pin assembly 104C).

FIG19 is a structural diagram of another laser according to some embodiments. As shown in FIG19 , the first row of light-emitting chips 1044 includes a first type of light-emitting chip 10441 and a second light-emitting chip 10442. The first type of light-emitting chip 10441 includes a first light-emitting chip 103A and a second light-emitting chip 103B, and the second light-emitting chip 10442 includes a third light-emitting chip 103C, a fourth light-emitting chip 103D, and a fifth light-emitting chip 103E. The first light-emitting chip 103A and the second light-emitting chip 103B are connected in series, and the first light-emitting chip 103A is connected to the electrode pin 1042 in the second sub-pin assembly 104B, and the second light-emitting chip 103B is connected to the electrode pin 1042 in the first sub-pin assembly 104A. The third light-emitting chip 103C is connected to the electrode pin 1042 in the first sub-pin assembly 104A, and the fifth light-emitting chip 103E is connected to the electrode pin 1042 in the third sub-pin assembly 104C.

17 to 19 respectively illustrate the example that each pin assembly 104 in the column direction (e.g., the second sub-pin assembly 104B and the third sub-pin assembly 104C) includes two electrode pins 1042. Of course, each pin assembly 104 in the column direction may also include other numbers of electrode pins 1042, and the present disclosure is not limited to this.

The foregoing mainly uses the example of setting a pin component 104 between multiple rows of light-emitting chips 1030 in the column direction of the light-emitting chips 103. Of course, multiple pin components 104 can also be set between multiple rows of light-emitting chips 1030 in the column direction of the light-emitting chips 103. For example, in other embodiments, a pin component 104 is set between two adjacent rows of light-emitting chips 103, and the pin component 104 includes at least two first conductive layers 10421. The two adjacent rows of light-emitting chips 103 are respectively connected to at least two first conductive layers 10421 in the pin component 104.

FIG. 20 is another structural diagram of a laser according to some embodiments. FIG. 21 is another structural diagram of a laser according to some embodiments. FIG. 20 is a top view of the laser 10 shown in FIG. 21. As shown in FIG. 20 and FIG. 21, the laser 10 includes a base plate 101, a frame 102, a plurality of light-emitting chips 103, and a plurality of pin assemblies 104.

FIG. 22 is a cross-sectional view of a pin assembly according to some embodiments, and FIG. 23 is a cross-sectional view of the pin assembly according to some embodiments at another viewing angle. FIG. 22 is a cross-sectional view of the pin assembly 104 in FIG. 20 taken along a first cross-section, the first cross-section being parallel to the first direction X and perpendicular to the second direction Y. FIG. 23 is a cross-sectional view of the pin assembly 104 in FIG. 20 taken along a second cross-section, the second cross-section being parallel to the second direction Y and perpendicular to the first direction X. As shown in FIG. 20 , the pin assembly 104 includes an insulator 1041 and two electrode pins 1042, the two electrode pins 1042 being fixedly connected to the insulator 1041 and spaced apart from each other to prevent the two conductive pins 1042 from short-circuiting.

As shown in FIG22 and FIG23 , the electrode pin 1042 includes a first conductive layer 10421, a second conductive layer 10422, and a conductive portion 10423. The conductive portion 10423 is located in the insulator 1041, and the first conductive layer 10421 and the second conductive layer 10422 are electrically connected via the conductive portion 10423.

As shown in FIG. 20 and FIG. 21 , the laser 10 includes 20 light-emitting chips 103 arranged in four rows and five columns. In the second direction Y, the pin assembly 104 is located between two adjacent rows of light-emitting chips 103. For example, the pin assembly 104 is located between the ends of the two adjacent rows of light-emitting chips 103 that are close to each other in the second direction Y, or between the center points of the two adjacent rows of light-emitting chips 103 in the second direction Y. The two adjacent rows of light-emitting chips 103 are respectively connected to the two first conductive layers 10421 in the pin assembly 104 between the two rows of light-emitting chips 103, and each row of light-emitting chips 103 is connected to a first conductive layer 10421 of the two first conductive layers 10421 that is closer to the row of light-emitting chips 103. In this way, the two adjacent rows of light-emitting chips 103 can be connected to the external circuit through the two electrode pins 1042 in the same pin assembly 104, which can reduce the number of pin assemblies 104 in the laser 10. Furthermore, the pin assembly 104 is located between the two adjacent rows of light emitting chips 103 , so that the volume of the pin assembly 104 is smaller than the volume of the two pin assemblies 104 ′ in the related art.

For example, as shown in FIG. 20 , the fifth sub-pin assembly 104E and the sixth sub-pin assembly 104H are respectively located in the first row of light emitting chips 1044 and the second row of light emitting chips 1045, the seventh sub-pin assembly 104F and the eighth sub-pin assembly 104G are respectively located between the third row of light emitting chips 1046 and the fourth row of light emitting chips 1047. The first row of light emitting chips 1044 are connected to the first conductive layer 10421 of the fifth sub-pin assembly 104E and the sixth sub-pin assembly 104H near the first row of light emitting chips 1044, and the second row of light emitting chips 1045 are connected to the first conductive layer 10421 of the fifth sub-pin assembly 104E and the sixth sub-pin assembly 104H near the second row of light emitting chips 1045. The third row of light emitting chips 1046 are connected to the first conductive layer 10421 of the seventh sub-pin assembly 104F and the eighth sub-pin assembly 104G near the third row of light emitting chips 1046, and the fourth row of light emitting chips 1047 are connected to the first conductive layer 10421 of the seventh sub-pin assembly 104F and the eighth sub-pin assembly 104G near the fourth row of light emitting chips 1047.

In some embodiments of the present disclosure, a pin assembly 104 includes two conductive pins 1042. Therefore, the fixed connection between the two electrode pins 1042 and the frame 102 can be achieved by fixedly connecting the pin assembly 104 to the frame 102. In addition, the volume of each pin assembly 104 in the laser 10 is small. In this way, the stress generated when the pin assembly 104 is fixedly connected to the frame 102 or the base plate 101 is small, which has a small impact on the quality of the laser 10, thereby improving the reliability of the laser 10.

In the laser 10 provided in some embodiments of the present disclosure, the pin assembly 104 includes an insulator 1041 and two electrode pins 1042 fixed to the insulator 1041 1, and the electrode pins 1042 can connect the inside and outside of the frame 102, so as to connect the light-emitting chip by using the first conductive layer 10421, and connect the external circuit by the second conductive layer 10422. The pin assembly 104 can be arranged between two adjacent rows of light-emitting chips, and the connection between the two adjacent rows of light-emitting chips and the external circuit can be achieved through the one pin assembly 104. In this way, the laser 10 only needs to include fewer pin assemblies 104, which can reduce the fixing process of the pin assembly 104, thereby simplifying the preparation process of the laser 10.

In some embodiments. As shown in FIG. 22 and FIG. 23, the first conductive layer 10421 and the second conductive layer 10422 are respectively located on the surface of the insulator 1041 away from the base plate 101. The insulator 1041 may be in the shape of a quadrangular prism (e.g., a cuboid), and the surface of the insulator 1041 away from the base plate 101 is a plane. In the surface of the insulator 1041 away from the base plate 101, the middle area in the first direction X is fixed to the frame 102, and the first conductive layer 10421 and the second conductive layer 10422 are respectively arranged in the two areas on both sides of the area. The volume of this kind of pin assembly 104 can be small, and the contact area between the insulator 1041 and the frame 102 is small. The stress generated when the pin assembly 104 is fixedly connected to the frame 102 or the base plate 101 is small, and the quality of the laser 10 is less affected.

In some embodiments, no other material may be provided between each conductive layer (e.g., the first conductive layer 10421 and the second conductive layer 10422) in the pin assembly 104, so as to achieve mutual spacing through air. Alternatively, insulating materials may be filled between each first conductive layer 10421 and between each second conductive layer 10422 to increase the insulation effect between the conductive layers. The insulating material may be the same as the material of the insulator 1041, such as ceramic, or may be different from the material of the insulator 1041. In addition, the material of the conductive layer includes gold, and the conductive layer may be provided on the insulator 1041 by electroplating. Alternatively, the material of the conductive layer may also include other conductive materials, which is not limited in the present disclosure.

In some embodiments, as shown in FIG. 22 , the conductive portion 10423 includes a first sub-conductive portion 10424, a second sub-conductive portion 10425, and a third sub-conductive portion 10426. The first sub-conductive portion 10424, the second sub-conductive portion 10425, and the third sub-conductive portion 10426 are connected in sequence, and the first sub-conductive portion 10424, the second sub-conductive portion 10425, and the third sub-conductive portion 10426 are strip-shaped. One end of the first sub-conductive portion 10424 is electrically connected to the first conductive layer 10421, and the other end of the first sub-conductive portion 10424 extends toward the bottom plate 101 in a direction perpendicular to the bottom plate 101. One end of the second sub-conductive portion 10425 is connected to the other end of the first sub-conductive portion 10424, and the other end of the second sub-conductive portion 10425 extends in a direction parallel to the bottom plate 101. One end of the third sub-conductive part 10426 is connected to the other end of the second sub-conductive part 10425, and the other end of the third sub-conductive part 10426 is connected to the second conductive layer 10422. The conductive part 10423 can be roughly U-shaped. For example, the first sub-conductive part 10424 and the third sub-conductive part 10426 are parallel and perpendicular to the bottom plate 101, and the second sub-conductive part 10425 is parallel to the bottom plate 101. The present disclosure does not limit the shape of the conductive part 10423, and the conductive part 10423 only needs to connect the first conductive layer 10421 and the second conductive layer 10422. The conductive part 10423 can be embedded in the third sub-insulator 10413, so that the conductive part 10423 can be isolated from the frame 102 and the bottom plate 101 through the third sub-insulator 10413.

In some embodiments, if the frame 102 is made of insulating material (such as ceramic), the conductive portion can be located on a side of the third sub-insulator 10413 away from the bottom plate 101. If the bottom plate 101 is made of insulating material, the conductive portion can be located on a side of the third sub-insulator 10413 close to the bottom plate 101.

In some embodiments, the insulator 1041 may not be in the shape of a quadrangular prism, and the surface of the insulator 1041 away from the base plate 101 may not be a plane. FIG. 24 is another pin assembly structure diagram according to some embodiments. For example, as shown in FIG. 24 , the pin assembly 104 also includes a second connection portion 10247. The second connection portion 10247 is located in the middle area of the surface of the insulator 1041 away from the base plate 101, and the second connection portion 10247 is fixed to the frame 102. The second connection portion 10247 can isolate the first conductive layer 10421 and the second conductive layer 10422 from the frame 102. Here, FIG. 24 takes the second connection portion 10247 as a rectangular parallelepiped as an example. Of course, the second connection portion 10247 can also be in other shapes, such as a pyramid, a prism or other shapes, and the present disclosure is not limited to this.

For the pin assembly 104 shown in FIG24, the structure of the conductive portion 10423 may also be the same as the structure of the conductive portion 10423 in FIG22. Alternatively, for the pin assembly 104 shown in FIG23, the conductive portion 10423 may also be in the same plane as the first conductive layer 10421 and the second conductive layer 10422 to directly connect the first conductive layer 10421 and the second conductive layer 10422.

In some embodiments, the second conductive layer 10422 may also be located on a portion of the insulator 1041 not surrounded by the frame 102 , and the second conductive layer 10422 is located on a side of the portion away from the frame 102 , and the side may be perpendicular to the base plate 101 .

FIG. 25 is another structural diagram of a pin assembly according to some embodiments. FIG. 26 is another structural diagram of a laser according to some embodiments. As shown in FIG. 25 and FIG. 26, on the basis of FIG. 22, the pin assembly 104 further includes two external pins 1048, and the two external pins 1048 are connected to the two second conductive layers 10422 accordingly. The external pin 1048 can be in a strip shape. One end of the external pin 1048 is fixedly connected to the second conductive layer 10422 and extends along the first direction X, and the other end of the external pin 1048 is connected to an external circuit.

In some embodiments, the material of the base plate 101 may include metal or ceramic, and the material of the frame 102 may also include metal or ceramic. The material of the insulator 1041 includes ceramic. For example, the metal is oxygen-free copper, Kovar alloy or other metals. The composition of the ceramic may be aluminum nitride, aluminum oxide or other components.

In some embodiments, the material of the insulator 1041 in the pin assembly 104 includes ceramic, and the pin assembly 104 can also be called a ceramic insulator. When the material of the base plate 101 includes metal, the electrode pins 1042 in the pin assembly 104 need to be spaced apart from the base plate 101 to prevent the electrode pins 1042 from being electrically connected to the base plate 101. When the material of the frame 102 includes metal, the electrode pins 1042 need to be spaced apart from the frame 102 to prevent the electrode pins 1042 from being electrically connected to the frame 102.

In some embodiments, the base plate 101 and the frame body 102 are made of the same material, and the base plate 101 and the frame body 102 can be an integral piece.

It should be noted that the above-mentioned metal may include oxygen-free copper, kovar alloy or other metals. The components of the ceramic may include aluminum nitride, aluminum oxide or other components. Oxygen-free copper has good thermal conductivity. The use of oxygen-free copper to prepare the base plate 101 can be beneficial to the heat dissipation of the light-emitting chip 103 in the laser 10. In addition, since the pin assembly 104 in the laser 10 of some embodiments of the present disclosure includes an insulator 1041, the conductive layer can be isolated from the base plate 101 by the insulator 1041, so the distance between the conductive layer and the base plate 101 can be closer, and the thickness of the tube shell can be smaller, which is beneficial to the miniaturization of the laser 10.

In the laser 10' using ceramic insulators as pin components in the related art, the base plate 101' and the frame 102' are usually oxygen-free copper. Within a certain temperature range, the thermal expansion coefficient of ceramics is between 6.5 and 7.5. The thermal expansion coefficient of oxygen-free copper is quite different from that of ceramics. Since there are more pin components 104' and a larger number of ceramic insulators in the laser 10' of the related art, greater thermal stress will be generated when welding the ceramic insulators to the base plate 101' and the frame 102', which will easily cause ceramic cracks, resulting in poor preparation effect of the laser 10'. However, the number of pin components 104 in the laser 10 provided in some embodiments of the present disclosure is relatively small, so that the contact area between the ceramic material and the oxygen-free copper can be reduced, the risk of ceramic cracks can be reduced, and the reliability of the laser 10 can be improved.

In addition, in order to improve the smoothness of the bonding process of the wire between the light-emitting chip 103 and the pin assembly 104, the coplanarity of the pin assembly 104 after the fixed connection is better. However, in the related art, there are a large number of ceramic insulators, and assembly errors will be introduced during the fixing process of each ceramic insulator, and then the overall assembly errors of each ceramic insulator are large, and it is difficult to achieve a high coplanarity. Therefore, the yield of the tube shell is low and the cost of the laser is high. However, the number of pin assemblies 104 in the laser 10 improved by the embodiment of the present disclosure is small, the fixing process of the pin assembly 104 is small, and the introduced assembly error is small, which is conducive to improving the coplanarity of each pin assembly 104, can reduce the process difficulty, improve the yield of the tube shell, and reduce the manufacturing cost of the laser 10.

In some embodiments, the light emitting chips 103 in the laser 10 can be arranged in an even number of rows, and the multiple fixing notches 1020 in the frame 102 are respectively located on both sides of the light emitting chips 103 in the first direction X, and the multiple pin assemblies 104 are respectively located on the two sides and matched with the corresponding fixing notches 1020. At this time, the number of pin assemblies 104 on each side is equal to half of the number of rows of the light emitting chips 103, and in the second direction Y, each pin assembly 104 can be located between two adjacent rows of light emitting chips 103. Each row of light emitting chips 103 is respectively connected in series, and the two ends of each row of light emitting chips 103 are respectively connected to the first conductive layer 10421 in the pin assembly 104 on both sides in the first direction X, and the first conductive layer 10421 in each pin assembly 104 can be connected to the light emitting chip 103. The electrode pin 1042 in the pin assembly 104 on the first side of the two sides serves as the positive pin, and the second conductive layer 10422 in the electrode pin 1042 on the first side is connected to the positive pole of the external circuit. The electrode pin 1042 in the pin assembly 104 on the second side serves as a negative electrode pin, and the second conductive layer 10422 in the electrode pin 1042 on the second side is connected to the negative electrode of the external circuit.

For example, as shown in FIG. 20 and FIG. 21, the laser 10 includes four pin assemblies 104 and 20 light-emitting chips 103 arranged in four rows and five columns, and each row of light-emitting chips 103 is connected in series. The four pin assemblies 104 include a fifth sub-pin assembly 104E, a sixth sub-pin assembly 104H, a seventh sub-pin assembly 104G, and an eighth sub-pin assembly 104H. The fifth sub-pin assembly 104E and the sixth sub-pin assembly 104H are located on one side of the light-emitting chip 103 in the first direction X, and the seventh sub-pin assembly 104G and the eighth pin assembly 104H are located on the other side of the light-emitting chip 103 in the first direction X. Each pin assembly 104 is located between two adjacent rows of light-emitting chips 103, so that each pin assembly 104 is connected in series. The first conductive layer 10421 connects the two rows of light-emitting chips 103. The second conductive layer 10422 in the seventh sub-pin component 104G and the eighth sub-pin component 104H can be connected to the positive electrode (or negative electrode) of the external circuit, respectively, and the second conductive layer 10422 in the fifth sub-pin component 104E and the sixth sub-pin component 104H can be connected to the negative electrode (or positive electrode) of the external circuit, respectively.

In some embodiments, the number of pin assemblies 104 on both sides of the laser 10 in the first direction X may also be different. For example, multiple pin assemblies 104 may be respectively located on one side in the first direction X. For example, two adjacent rows of light-emitting chips 103 in the laser 10 are connected in series, and both ends of the two rows of light-emitting chips 103 in series are respectively connected to the first conductive layers 10421 in the two pin assemblies 104 located on the same side.

In some other embodiments, the light emitting chips 103 may also be arranged in odd rows. In this case, one first conductive layer 10421 of the pin assembly 104 may be connected to the light emitting chip 103, while another first conductive layer 10421 may not be connected to the light emitting chip 103. The pin assembly 104 may be aligned with a row of light emitting chips 103 connected thereto in the first direction X, and is not located between two adjacent rows of light emitting chips 103. For example, the laser 10 includes three rows of light emitting chips and four pin assemblies 104, and two pin assemblies 104 are respectively arranged on each side of the light emitting chip 103 in the first direction X. For the first side, one pin assembly 104 may be located between the first two rows of light emitting chips 103, and for the second side, another pin assembly 104 may be aligned with the third row of light emitting chips among the three rows of light emitting chips, and the third row of light emitting chips 103 is connected to one first conductive layer 10421 of the pin assembly 104. Alternatively, in some embodiments, a pin assembly 104 including only one electrode pin 1042 may be used instead of a pin assembly 104 including two electrode pins 1042 , where only one first conductive layer 10421 is connected to the light-emitting chip 103 .

In some embodiments, the second conductive layers 10422 in different pin assemblies 104 located on the same side of the light-emitting chip 103 in the first direction X may also be connected to different electrodes of the external circuit, and the two second conductive layers 10422 in the same pin assembly 104 may also be connected to different electrodes of the external circuit. The present disclosure does not limit the electrodes connected to each second conductive layer 10422. It is only necessary to connect one end of each group of light-emitting chips 103 connected in series to the positive electrode of the external circuit and the other end to the negative electrode of the external circuit so that the light-emitting chip 103 can receive current.

In some embodiments, as shown in FIG6 and FIG21, the laser 10 further includes a plurality of heat sinks 106 and a plurality of reflective prisms 107. The plurality of reflective prisms 107 and the plurality of heat sinks 106 correspond to the plurality of light-emitting chips 103, respectively. Each light-emitting chip 103 is located on a corresponding heat sink 106, and the heat sink 106 is configured to dissipate heat for the light-emitting chip 103. The heat sink 106 may be made of ceramic. Each reflective prism 107 is located on the light-emitting side of the corresponding light-emitting chip 103, and is configured to reflect the laser light emitted by the corresponding light-emitting chip 103, and the reflective prism 107 may reflect the laser light in a direction away from the base plate 101.

FIG27 is another structural diagram of a laser according to some embodiments. FIG27 may be a cross-sectional view of the laser 10 corresponding to any of the above embodiments, and the cross section may be parallel to the first direction X and the third direction Z. In some embodiments, as shown in FIG27, the laser 10 further includes a light-transmitting layer 108. The light-transmitting layer 108 is disposed on a side of the frame 102 away from the bottom plate 101, and the light-transmitting layer 108 is configured to close the accommodating space 112 enclosed by the frame 102 and the bottom plate 101. At least a portion of the light-transmitting layer 108 may be fixedly connected to the surface of the frame 102 away from the bottom plate 101. For example, a portion of the light-transmitting layer 108 near its edge is provided with a metal solder, which contacts the surface of the frame 102 away from the bottom plate 101. Afterwards, the frame 102 and the light-transmitting layer 108 are placed together in the high-temperature furnace to melt the metal solder, thereby welding the frame 102 to the light-transmitting layer 108.

FIG28 is another structural diagram of a laser according to some embodiments. Alternatively, as shown in FIG28 , the laser 10 further includes a sealing frame 110. An outer edge 1101 of the sealing frame 110 is fixedly connected to a surface of the frame 102 away from the base plate 101, and an inner edge 1102 of the sealing frame 110 is fixedly connected to an edge of the light-transmitting layer 108. The light-transmitting layer 108 is fixed to the frame 102 by the sealing frame 110. For example, the inner edge 1102 of the sealing frame 110 is recessed relative to the direction of the outer edge 1101 close to the base plate 101. The thickness of each position of the sealing frame 110 may be substantially the same, and the sealing frame 110 may be a sheet metal part. For example, a ring plate is processed by a stamping process to obtain the sealing frame 110.

In some embodiments, the material of the frame 102 includes metal, the material of the sealing frame 110 includes metal, and the sealing frame 110 and the frame 102 can be welded by parallel sealing technology. During the welding process, since the contact area of the welded object (such as the sealing frame 110) generates heat locally, and the generated heat is small, when the light-transmitting layer 108 is fixedly connected to the frame 102, the heat conducted to the light-emitting chip 103 is small, and the heat has little effect on the light-emitting chip 103, thereby reducing the risk of damage to the light-emitting chip 103.

Alternatively, the sealing frame 110 and the light-transmitting layer 108 can be welded using low-temperature glass solder. For example, the light-transmitting layer 108 is placed at the inner edge 1102 of the sealing frame 110, and a low-temperature glass welding ring is placed at the inner edge 1102 of the sealing frame 110, and the low-temperature glass welding ring surrounds the edge of the light-transmitting layer 108. Afterwards, the low-temperature glass welding ring is heated to melt the low-temperature glass welding ring and fill the gap between the inner edge 1102 of the sealing frame 110 and the edge area of the light-transmitting layer 108. Then, after the low-temperature glass solder is cooled and solidified, the sealing frame 110 and the light-transmitting layer 108 are fixed. In some embodiments, during welding, the low-temperature glass solder surrounds the light-transmitting layer 108 to limit the light-transmitting layer 108, thereby preventing the light-transmitting layer 108 from shifting when welding with the sealing frame 110, thereby improving the welding accuracy of the light-transmitting layer 108.

In some embodiments, as shown in FIG. 27 and FIG. 28 , the laser 10 further includes a collimator lens group 109. The collimator lens group 109 is located on a side of the frame 102 away from the bottom plate 101 and is configured to collimate the incident laser beam. For example, as shown in FIG. 26 , the collimator lens group 109 is configured to collimate the incident laser beam. Placed on the side of the light-transmitting layer 108 away from the base plate 101, the edge of the collimating lens group 109 is fixedly connected to the edge of the light-transmitting layer 108 by an adhesive (such as epoxy glue). As shown in Figure 28, the edge of the collimating lens group 109 is fixedly connected to the edge of the sealing frame 110 by an adhesive (such as epoxy glue).

The collimator lens group 109 includes a plurality of collimator lenses 1091, and the plurality of collimator lenses 1091 correspond to the plurality of light emitting chips 1030. The collimator lenses 1091 are configured to collimate the incident laser beam. The plurality of collimator lenses 1091 may be an integral part. For example, as shown in FIG14 , the surface of the collimator lens group 109 away from the base plate 101 bulges in a direction away from the base plate 101 to form a plurality of convex arc surfaces, and each convex arc surface is a collimator lens 1091.

It should be noted that collimating the laser beam refers to adjusting the divergence angle of the laser beam so that the laser beam becomes a nearly parallel beam. The laser beam emitted by the light-emitting chip 103 is reflected by the reflective prism 107 to the light-transmitting layer 108, and the light-transmitting layer 108 transmits the laser beam to the collimating lens 1091 corresponding to the light-emitting chip 103. The laser beam incident on the collimating lens 1091 is collimated by the collimating lens 1091 and then emitted to realize the light emission of the laser 10.

Those skilled in the art will appreciate that the scope of the present disclosure is not limited to the above specific embodiments, and that certain elements of the embodiments may be modified and replaced without departing from the spirit of the present application. The scope of the present application is limited by the appended claims.

Claims

A projection device, comprising:

a light source configured to emit laser light of multiple colors as an illumination beam;

an optical modulation component configured to modulate the illumination light beam to obtain a projection light beam; and

A lens, located at a light-emitting side of the optical modulation component, and configured to project the projection light beam to form a projection picture;

Wherein, the light source comprises a laser, and the laser comprises:

Base plate;

A frame body, disposed on the bottom plate, defining a receiving space with the bottom plate, and the frame body comprising at least one fixing notch;

A plurality of light-emitting chips are disposed on the bottom plate and located in the accommodation space; and

At least one pin assembly is arranged corresponding to the at least one fixing notch; the pin assembly comprises:

an insulator connected to the frame through the fixing notch; and

At least one electrode pin is arranged on the insulator at intervals; the electrode pin comprises:

a first conductive layer, located in the accommodating space and configured to be electrically connected to the light-emitting chip; and

The second conductive layer is located outside the accommodating space and is configured to be electrically connected to the first conductive layer and an external circuit.
The projection device according to claim 1, wherein the insulator comprises:

A first sub-insulator is located in the accommodating space; the first conductive layer is arranged on a side of the first sub-insulator away from the bottom plate;

A second sub-insulator is located outside the accommodating space; the second conductive layer is arranged on a side of the second sub-insulator away from the bottom plate; and

A third sub-insulator is located between the first sub-insulator and the third sub-insulator and is connected to the frame through the fixing notch; the third sub-insulator is connected to the bottom plate;

Wherein, the electrode pin further includes a conductive portion, the conductive portion is located in the third sub-insulator, and the first conductive layer and the second conductive layer are electrically connected via the conductive portion.
The projection device according to claim 2, wherein the insulator satisfies one of the following:

The third sub-insulator protrudes relative to the first sub-insulator and the second sub-insulator in a direction away from the bottom plate; and

A surface of the third sub-insulator away from the bottom plate is flush with a surface of the first sub-insulator away from the bottom plate and a surface of the second sub-insulator away from the bottom plate.
The projection device according to any one of claims 1 to 3, wherein the at least one fixing notch is located at one end of the frame body close to the base plate, and in the length direction of the pin assembly, the length of the pin assembly is less than or equal to the length of the frame body.
The projection device according to any one of claims 1 to 4, wherein the frame comprises two side walls arranged opposite to each other, and the two side panels are connected to the bottom panel;

The at least one fixing notch includes two fixing notches, and the two fixing notches are respectively arranged in the two side walls and open toward the bottom plate;

Wherein, the at least one pin assembly includes two pin assemblies, and the two pin assemblies are respectively arranged in the two fixing notches.
The projection device according to claim 5, wherein the second conductive layer in one of the two pin assemblies is configured to connect to the positive electrode of the external circuit, and the second conductive layer in the other of the two pin assemblies is connected to the negative electrode of the external circuit.
The projection device according to claim 2, wherein the frame comprises at least three side walls; the at least one fixing notch comprises at least three fixing notches, and the at least three fixing notches are respectively arranged in the at least three side walls;

The at least one pin assembly includes at least three pin assemblies; the at least three pin structures are matched with the at least three fixing notches respectively and are arranged in the at least three fixing notches;

The multiple light-emitting chips include at least three types of light-emitting chips, and any one type of light-emitting chips in the at least three types of light-emitting chips is configured to emit laser of one color; at least some of the light-emitting chips in any one type of light-emitting chips are connected in series; at least some of the light-emitting chips correspond to any one of the at least one pin components, and two ends of at least some of the light-emitting chips are respectively electrically connected to two electrode pins in the corresponding pin component.
The projection device according to claim 7, wherein the at least three types of light-emitting chips are arranged into at least three rows of light-emitting chips, and any row of the at least three rows of light-emitting chips includes one type of light-emitting chips; the light-emitting chips in any row are connected in series, and two ends of the light-emitting chips in any row are respectively electrically connected to two electrode pins in the corresponding pin assembly.
The projection device according to claim 8, wherein the at least three pin components include:

Two first pin assemblies are arranged opposite to each other along the row direction of the plurality of light-emitting chips, and the number of electrode pins in any one of the two first pin assemblies is equal to the number of rows of the plurality of light-emitting chips; and

At least one second pin component is located at at least one side of the plurality of light emitting chips in a column direction.
The projection device according to claim 9, wherein along the column direction of the plurality of light-emitting chips, two ends of any row of light-emitting chips located in the middle portion are electrically connected to one electrode pin of the two first pin assemblies respectively;

Wherein, the laser satisfies one of the following:

Along the column direction of the plurality of light-emitting chips, two ends of at least one row of light-emitting chips located at the edge are electrically connected to two electrode pins in the at least one second pin assembly respectively; and

Along the column direction of the plurality of light-emitting chips, two ends of the at least one row of light-emitting chips located at the edge are electrically connected to one electrode pin of the two first pin assemblies respectively.
The projection device according to claim 10, wherein along the column direction of the plurality of light-emitting chips, the at least one row of light-emitting chips is electrically connected to two electrode pins of the pin assembly close to the at least one row of light-emitting chips;

The laser further comprises a transfer platform, and the at least one row of light-emitting chips is electrically connected to the two electrode pins of the adjacent pin assembly through the transfer platform.
The projection device according to any one of claims 1 to 11, wherein the frame comprises:

a transition ring, disposed on the bottom plate, configured to buffer stress;

a target side wall disposed on the transition ring; and

A sealing ring connected to the frame and configured to close the fixing gap;

The transition ring, the target side wall and the sealing ring are arranged in sequence in a direction away from the bottom plate.
The projection device according to claim 2, wherein the plurality of pin assemblies are arranged in pairs on both sides of the plurality of light-emitting chips;

The plurality of light-emitting chips are arranged in a plurality of rows and columns, and the light-emitting chips in each row are connected in series; in the column direction of the plurality of light-emitting chips, any pair of pin assemblies among the plurality of pin assemblies is located between any two adjacent rows of light-emitting chips;

Among them, one end of any two adjacent rows of light-emitting chips is respectively connected to the two first conductive layers in one pin component in any pair of pin components, and the other end of any two adjacent rows of light-emitting chips is respectively connected to the two first conductive layers in the other pin component in any pair of pin components.
The projection device according to claim 13, wherein the conductive portion comprises:

A first sub-conductive portion, one end of which is electrically connected to the first conductive layer, and the other end of which extends toward the bottom plate in a direction perpendicular to the bottom plate;

a second sub-conductive portion, one end of which is connected to the other end of the first sub-conductive portion, and the other end of which extends in a direction parallel to the bottom plate; and

A third sub-conductive portion, one end of the third sub-conductive portion is connected to the other end of the second sub-conductive portion, and the other end of the third sub-conductive portion is electrically connected to the second conductive layer.
The projection device according to claim 13 or 14, wherein the plurality of light-emitting chips are arranged into an even number of rows of light-emitting chips, and the number of the plurality of pin assemblies corresponds to the number of rows in which the plurality of light-emitting chips are arranged.
The projection device according to any one of claims 13 to 15, wherein the laser further comprises at least two external pins, and the at least two external pins are connected to the two second conductive layers correspondingly.
The projection device according to any one of claims 1 to 16, wherein the laser further comprises a solder component, a portion of the solder component is located between the pin component and the frame, another portion of the solder component is located between the pin component and the base plate, and the pin component, the frame and the base plate are connected via the solder component.
The projection device according to claim 17, wherein the solder component covers at least a portion of a surface of the insulator and at least a portion of a surface of the pin component close to the base plate.
The projection device according to any one of claims 1 to 18, wherein the base plate is made of a ceramic material or a metal material, the frame is made of a ceramic material or a metal material, and the insulator is made of a ceramic material.
The projection device according to any one of claims 1 to 19, wherein the light source further comprises a light combining component; the light combining component is located on the light output side of the laser, and is configured to combine laser lights of different colors emitted by the laser and then emit the combined lights.