WO2023124344A1

WO2023124344A1 - Laser

Info

Publication number: WO2023124344A1
Application number: PCT/CN2022/123566
Authority: WO
Inventors: 张昕; 田有良; 周子楠; 卢瑶
Original assignee: 青岛海信激光显示股份有限公司
Priority date: 2021-12-31
Filing date: 2022-09-30
Publication date: 2023-07-06
Also published as: CN118402148A

Abstract

A laser (10), comprising: a bottom plate (101), multiple light-emitting chip sets (103), at least one frame (102), at least one first electrically conductive layer (1023), and at least one second electrically conductive layer (1024). The at least one frame (102) comprises a frame body (1020), a first step (1021), and a second step (1022). A portion of an end of the frame body (1020) near the bottom plate (101) protrudes in a direction toward the multiple light-emitting chip sets (103), forming the first step (1021). Another portion of the end of the frame body (1020) near the bottom plate (101) protrudes in a direction away from the multiple light-emitting chip sets (103), forming the second step (1022). The at least one first electrically conductive layer (1023) is disposed on the first step (1021), and is connected to the multiple light-emitting chip sets (103). The at least one second electrically conductive layer (1024) is disposed on the second step (1022). The at least one second electrically conductive layer (1024) is connected to a corresponding first electrically conductive layer (1023), and is connected to an external power source.

Description

laser

This application claims the priority of the Chinese patent application with application number 202111672619.3 filed on December 31, 2021; the priority of the Chinese patent application with application number 202111666644.0 filed on December 31, 2021, the entire content of which is adopted References are incorporated in this application.

technical field

The present disclosure relates to the field of optoelectronic technology, in particular to a laser.

Background technique

With the development of optoelectronic technology, the application of laser is more and more extensive. For example, lasers can be used in welding processes, cutting processes, and laser projection. For example, a laser can be used as a light source in a laser projection device. Moreover, with the development of laser manufacturing technology, consumers have higher and higher requirements for the miniaturization and reliability of lasers.

Contents of the invention

A laser is provided. The laser includes a bottom plate, a plurality of light-emitting chip groups, at least one frame, at least one first conductive layer and at least one second conductive layer. The plurality of light-emitting chipsets are arranged on the base plate. The at least one frame surrounds the plurality of light-emitting chipsets. The at least one frame includes a frame body, a first step and a second step. The frame body is arranged on the bottom plate. A part of one end of the frame body close to the bottom plate protrudes toward the direction close to the plurality of light-emitting chipsets to form the first step. Another part of the frame body near the end of the bottom plate protrudes away from the plurality of light-emitting chipsets to form the second step. The at least one first conductive layer is disposed on the first step. The at least one first conductive layer is connected to the plurality of light emitting chip groups. The at least one second conductive layer is disposed on the second step. The at least one second conductive layer is connected to the corresponding first conductive layer, and the at least one second conductive layer is connected to an external power supply, so that the external power supply is electrically connected to the plurality of light-emitting chipsets, so as to provide the The plurality of light-emitting chipsets provide driving current.

Description of drawings

In order to illustrate the technical solutions in the present disclosure more clearly, the following will briefly introduce the accompanying drawings required in some embodiments of the present disclosure, however, the accompanying drawings in the following description are only drawings of some embodiments of the present disclosure , for those skilled in the art, other drawings can also be obtained according to these drawings. In addition, the drawings in the following description can be regarded as schematic diagrams, and are not limitations on the actual size of the product involved in the embodiments of the present disclosure, the actual process of the method, the actual timing of signals, and the like.

FIG. 1A is a structural diagram of a laser in the related art;

FIG. 1B is another structural diagram of a laser in the related art;

Figure 2 is a structural diagram of a laser according to some embodiments;

Fig. 3 is a sectional view of the laser in Fig. 2 along the line AA;

Fig. 4 is another kind of sectional view of the laser in Fig. 2 along AA line;

Figure 5 is a block diagram of another laser according to some embodiments;

Figure 6 is a block diagram of a base plate according to some embodiments;

Fig. 7 is a structural diagram when the bottom plate and the frame are welded according to some embodiments;

FIG. 8 is a structural diagram of another laser according to some embodiments;

Fig. 9 is a structural diagram of a switching station according to some embodiments;

Fig. 10 is a block diagram of a second switching station according to some embodiments.

Explanation of reference signs:

Laser 10'; bottom plate 101'; frame 102'; light-emitting chip 1030'; wire 104'; conductive pin 109'; accommodating space 110';

Laser 10; bottom plate 101; first area 1011; second area 1012; first sub-area 1012A; second sub-area 1012B; third sub-area 1012C; frame 102; frame body 1020; first sub-side plate 11; The second sub-side plate 12; the third sub-side plate 13; the fourth sub-side plate 14; the first step 1021; the second step 1022; the first conductive layer 1023; the second conductive layer 1024; the first frame body 102A; Second frame body 102B; third frame body 102C; light-emitting chip group 103; light-emitting chip 1030; first light-emitting chip group 103A; second light-emitting chip group 103B; chip 1032; third light-emitting chip 1033; wire 104; heat sink 105; reflective prism 106; collimating mirror group 107; collimating lens 1071; accommodating space 110B; third accommodating space 110C; adapter 120; first adapter 1201; second adapter 1202; third adapter 1203; adapter body 1204; adapter layer 1205; A transition portion 1206 ; a second transition portion 1207 ; a conductive portion 130 ; a transition ring 20 ; a first welding ring 21 ; a second welding ring 22 .

Detailed ways

The technical solutions in some embodiments of the present disclosure will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are only some of the embodiments of the present disclosure, not all of them. All other embodiments obtained by persons of ordinary skill in the art based on the embodiments provided in the present disclosure belong to the protection scope of the present disclosure.

Throughout the specification and claims, unless the context requires otherwise, the term "comprise" and other forms such as the third person singular "comprises" and the present participle "comprising" are used Interpreted as the meaning of openness and inclusion, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "example", "specific examples" example)" or "some examples (some examples)" etc. are intended to indicate that specific features, structures, materials or characteristics related to the embodiment or examples are included in at least one embodiment or example of the present disclosure. Schematic representations of the above terms are not necessarily referring to the same embodiment or example. Furthermore, the particular features, structures, materials or characteristics described may be included in any suitable manner in any one or more embodiments or examples.

Hereinafter, the terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, a feature defined as "first" and "second" may explicitly or implicitly include one or more of these features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.

In describing some embodiments, the expressions "coupled" and "connected" and their derivatives may be used. The term "connection" should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral body; it can be a direct connection or an indirect connection through an intermediary. The term "coupled" indicates that two or more elements are in direct physical or electrical contact. The terms "coupled" or "communicatively coupled" may also mean that two or more components are not in direct contact with each other, but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited by the context herein.

"A and/or B" includes the following three combinations: A only, B only, and a combination of A and B.

The use of "suitable for" or "configured to" herein means open and inclusive language that does not exclude devices that are suitable for or configured to perform additional tasks or steps.

As used herein, "about", "approximately" or "approximately" includes the stated value as well as the average within the acceptable deviation range of the specified value, wherein the acceptable deviation range is as determined by one of ordinary skill in the art. Determined taking into account the measurement in question and the errors associated with the measurement of a particular quantity (ie, limitations of the measurement system).

As used herein, "parallel", "perpendicular", and "equal" include the stated situation and the situation similar to the stated situation, the range of the similar situation is within the acceptable deviation range, wherein the The stated range of acceptable deviation is as determined by one of ordinary skill in the art taking into account the measurement in question and errors associated with measurement of the particular quantity (ie, limitations of the measurement system).

FIG. 1A is a structural diagram of a laser in the related art. FIG. 1B is another structure diagram of a related art laser.

Generally, as shown in FIG. 1A , the laser 10' includes a base plate 101', a frame body 102' and a plurality of light emitting chips 1030'. The bottom plate 101' can be made of metal material (such as copper). The frame body 102' is disposed on the bottom plate 101', and the frame body 102' may be made of ceramic material. For example, the frame body 102' is welded on the bottom plate 101'. The frame body 102' and the bottom plate 101' form an accommodating space 110', the plurality of light emitting chips 1030' are located in the accommodating space 110', and the plurality of light emitting chips 1030' are arranged in an array. Because there is a large difference in thermal expansion coefficient between the base plate 101' and the frame body 102', a large stress will be generated when the base plate 101' and the frame body 102' are welded, and the base plate 101' and the frame body 102' are easy to overcome the stress. The reliability of the laser 10' is lower due to damage under the action.

In addition, as shown in FIG. 1B , the laser 10' further includes a plurality of conductive pins 109' and a plurality of wires 104'. A plurality of conductive pins 109' are disposed on opposite sides of the frame body 102'. Each row of light-emitting chips 1030' can be connected in series through a wire 104', and the two ends of the wire 104' are respectively connected to two conductive pins 109' located on both sides of the frame body 102' to receive the signal transmitted by the conductive pins 109'. current. In order to avoid the small distance between the bottom plate 101' and the conductive pin 109', causing a short circuit and affecting the conductivity of the conductive pin 109', it is usually necessary to make the distance between the conductive pin 109' and the bottom plate 101' larger. In this way, the height of the laser 10' is high, which is not conducive to the miniaturization of the laser 10'. And, because the conductive pin 109' is suspended in the air, the withstand pressure of the conductive pin 109' is relatively small. When the pins 109' are fixedly connected, the pressure is likely to cause damage to the conductive pins 109', and the reliability of the laser 10' is poor.

Some embodiments of the present disclosure provide a laser 10 . In the laser 10, the reliability of the laser 10 can be improved by arranging a plurality of frames 102, and the first conductive layer 1023 and the second conductive layer 1024 arranged on the first step 1021 and the second step 1022, and it is beneficial to Miniaturization of the laser 10. The above structure will be described later.

FIG. 2 is a block diagram of a laser according to some embodiments. FIG. 3 is a cross-sectional view of the laser in FIG. 2 along line AA. FIG. 4 is another cross-sectional view of the laser in FIG. 2 along line AA. Compared with FIG. 3 , the laser 10 in FIG. 4 includes a light-transmitting layer 108 and a collimating lens group 107 . The above-mentioned transparent layer 108 and collimator lens group 107 will be described later.

In some embodiments, as shown in FIG. 2 , the laser 10 includes a base plate 101 , multiple frames 102 and multiple light emitting chipsets 103 . A plurality of frames 102 and a plurality of light-emitting chipsets 103 are respectively disposed on the bottom plate 101 , and the plurality of frames 102 correspond to the plurality of light-emitting chipsets 103 . The light emitting chip group 103 includes light emitting chips 1030 . A frame body 102 and the bottom plate 101 form an accommodating space 110 , and the light-emitting chipset 103 corresponding to the frame body 102 is located in the accommodating space 110 . In this way, the bottom plate 101 and the plurality of frame bodies 102 can form a plurality of accommodating spaces 110 , and the plurality of light-emitting chip groups 103 are respectively located in the plurality of accommodating spaces 110 . It should be noted that the structure formed by the base plate 101 and the frame body 102 may be called a tube case.

For example, as shown in FIG. 2 , the plurality of frames 102 include a first frame 102A, a second frame 102B, and a third frame 102C. The plurality of light emitting chip groups 103 includes a first light emitting chip group 103A, a second light emitting chip group 103B, and a third light emitting chip group 103C. The first frame body 102A and the bottom plate 101 form a first accommodating space 110A, and the first light-emitting chipset 103A is located in the first accommodating space 110A. The second frame body 102B and the bottom plate 101 form a second accommodating space 110B, and the second light-emitting chip group 103B is located in the second accommodating space 110B. The third frame body 102C and the bottom plate 101 form a third accommodating space 110C, and the third light-emitting chip group 103C is located in the third accommodating space 110C.

It should be noted that the number of the multiple frames 102 and the multiple light-emitting chip groups 103 may also be two, four or more. FIG. 5 is a block diagram of another laser according to some embodiments. For example, as shown in FIG. 5 , the plurality of frames 102 only include a first frame 102A and a second frame 102B.

One light emitting chipset 103 may include one light emitting chip 1030 . Of course, one light emitting chip group 103 may also include multiple light emitting chips 1030 . The plurality of light emitting chips 1030 can be connected in series and arranged in an array.

For example, as shown in FIG. 2, the first light-emitting chip group 103A includes a plurality of first light-emitting chips 1031, the second light-emitting chip group 103B includes a plurality of second light-emitting chips 1032, and the third light-emitting chip group 103C includes a plurality of third light-emitting chips. Chip 1033.

It should be noted that, in FIG. 2 and FIG. 5 , a plurality of light-emitting chips 1030 in one light-emitting chip group 103 are arranged in a row as an example for illustration. Of course, the present disclosure is not limited thereto. Multiple light emitting chips 1030 in one light emitting chip group 103 can also be arranged in multiple rows. Moreover, the number of the plurality of light-emitting chips 1030 in each light-emitting chip group 103 may be equal or not.

For example, as shown in FIG. 2, the first light-emitting chip group 103A includes seven first light-emitting chips 1031, the second light-emitting chip group 103B includes four second light-emitting chips 1032, and the third light-emitting chip group 103C includes three third light-emitting chips. Chip 1033. The number of different light-emitting chips 1030 in the laser 10 can be determined according to the ratio of laser beams of various colors in the desired laser beams.

In this case, the size of the frame body 102 can be set according to the number of light-emitting chips 1030 in the corresponding light-emitting chip group 103 , and a plurality of frame bodies 102 can be arranged in an array.

For example, as shown in FIG. 2 , the size of the second frame body 102B and the third frame body 102C is smaller than that of the first frame body 102A because the number of the second light-emitting chips 1032 and the third light-emitting chips 1033 is small. In this case, the second frame body 102B and the third frame body 102C are aligned along the first direction X in a row. A part of the first frame body 102A is aligned with the second frame body 102B along the second direction Y, and another part of the first frame body 102A is aligned with the third frame body 102C in another row along the second direction Y. The first direction X is perpendicular to the second direction Y.

In this way, the area of the bottom plate 101 can be utilized to the greatest extent, and the utilization rate of the bottom plate 101 is improved. Certainly, the three frame bodies 102 in FIG. 2 may also be arranged sequentially along a certain direction, which is not limited in the present disclosure. It should be noted that some embodiments of the present disclosure are described by taking the first direction X perpendicular to the second direction Y as an example. Of course, the included angle between the first direction X and the second direction Y may also be an obtuse angle or an acute angle.

In some embodiments, laser 10 may be a monochromatic laser. Multiple light-emitting chip groups 103 in the laser 10 emit laser beams of the same color.

In some embodiments, laser 10 may also be a multicolor laser. The multiple light-emitting chip groups 103 are configured to emit at least two laser beams of different colors, and different light-emitting chip groups 103 emit laser beams of different colors. For example, as shown in FIG. 2 , three light-emitting chip groups 103 respectively emit laser beams of different colors. The first light emitting chip group 103A emits a red laser beam, the second light emitting chip group 103B emits a green laser beam, and the third light emitting chip group 103C emits a blue laser beam.

Figure 6 is a block diagram of a backplane according to some embodiments.

In some embodiments, as shown in FIG. 3 and FIG. 6 , the bottom plate 101 includes a first region 1011 and a plurality of second regions 1012 . The plurality of second regions 1012 protrude toward the direction away from the bottom plate 101 relative to the first region 1011 , and the plurality of second regions 1012 correspond to the plurality of frames 102 . A plurality of frames 102 are disposed in the first area 1011 , and the plurality of frames 102 respectively surround the corresponding second area 1012 . The plurality of light-emitting chip groups 103 are respectively located in the plurality of second regions 1012 .

For example, as shown in FIG. 6 , the plurality of second regions 1012 includes a first subregion 1012A, a second subregion 1012B, and a third subregion 1012C. The first frame body 102A surrounds the first sub-region 1012A, the second frame body 102B surrounds the second sub-region 1012B, and the third frame body 102C surrounds the third sub-region 1012C.

In some embodiments, the base plate 101 and the frame body 102 may be welded by a brazing process. For example, the frame body 102 is placed on the surface of the base plate 101 , and a welding ring is provided between the base plate 101 and the frame body 102 . Afterwards, the bottom plate 101 and the frame body 102 are placed in a high-temperature furnace, and the welding ring is melted to fill the gap between the bottom plate 101 and the surface (such as the bottom surface) of the frame body 102 close to the bottom plate 101, thereby completing the bottom plate 101 and the frame body. 102's of welding.

In some embodiments, multiple frame bodies 102 may be fixedly connected to the base plate 101 in sequence. For example, firstly, one frame body 102 is welded on the bottom plate 101 , and after the frame body 102 and the bottom plate 101 are cooled, another frame body 102 is welded on the bottom plate 101 . In this way, since a plurality of light-emitting chips 1030 in the laser 10 are respectively packaged by a plurality of frames 102, the number of light-emitting chips 1030 arranged in one frame 102 is small, therefore, the volume of the frame 102 can be smaller, and the frame 102 The contact area with the bottom plate 101 can be small. Since the stress generated when two objects are welded is positively related to the contact area between the two objects. Therefore, when a plurality of frame bodies 102 are sequentially welded on the bottom plate 101 , the stress generated during each welding can be small. Moreover, in the process of welding another frame body 102 after one frame body 102 is welded, the stress generated between the previous frame body 102 and the bottom plate 101 can be released, thereby reducing the welding time between the frame body 102 and the bottom plate 101. risk of damage due to stress.

In some embodiments, the bottom plate 101 and the frame body 102 are made of different materials, and the bottom plate 101 and the frame body 102 have different coefficients of thermal expansion (Coefficient of Thermal Expansion). For example, the material of the bottom plate 101 includes metal, such as copper or other metals. The material of the frame body 102 may include ceramics.

In this case, the laser 10 also includes a transition ring 20 . The transition ring 20 is disposed between the bottom plate 101 and the frame body 102 , and the bottom plate 101 and the frame body 102 are fixedly connected by the transition ring 20 . The shape of the transition ring 20 matches the shape of the frame body 102 . For example, the orthographic projection of the transition ring 20 on the bottom plate 101 coincides with the orthographic projection of the frame body 102 on the bottom plate 101 . The thermal expansion coefficient of the transition ring 20 is greater than or equal to the thermal expansion coefficient of the bottom plate 101 and less than or equal to the thermal expansion coefficient of the frame body 102, or the thermal expansion coefficient of the transition ring 20 is less than or equal to the thermal expansion coefficient of the bottom plate 101 and greater than or equal to the frame body 102 As long as the thermal expansion coefficient of the transition ring 20 is between the thermal expansion coefficients of the bottom plate 101 and the frame body 102 . For example, the transition ring 20 is made of molybdenum (Molybdenum). In this way, in the process of welding the bottom plate 101 and the frame body 102, when the bottom plate 101 and the frame body 102 generate a large stress due to the difference in thermal expansion coefficient, the transition ring 20 can buffer and release the stress, so as to further reduce the pressure between the bottom plate 101 and the frame body. The risk of damage to body 102 under stress during welding.

Fig. 7 is a structural view of the welding of the base plate and the frame according to some embodiments.

For example, as shown in FIG. 7 , the laser 10 includes a transition ring 20, a first welding ring 21, and a second welding ring 22, and the transition ring 20, the first welding ring 21, and the second welding ring 22 are arranged on the bottom plate 101 and the frame body 102. between. During the process of fixing the bottom plate 101 and the frame body 102 , the first welding ring 21 , the transition ring 20 , the second welding ring 22 and the frame body 102 are sequentially stacked on the bottom plate 101 in a direction away from the bottom plate 101 . Afterwards, the combined structure of the bottom plate 101, the first welding ring 21, the transition ring 20, the second welding ring 22 and the frame body 102 is placed in the high-temperature furnace, and the first welding ring 21 is melted to fill the bottom plate 101 and the frame body 102. The gap between the transition rings 20 makes the second welding ring 22 melt to fill the gap between the frame body 102 and the transition ring 20 , so as to realize the welding of the bottom plate 101 and the frame body 102 .

Since the multiple frames 102 have the same structure, one frame 102 among the multiple frames 102 is taken as an example for description below.

In some embodiments, as shown in FIGS. 2 and 3 , the frame 102 includes a frame body 1020 , a first step 1021 and a second step 1022 . The laser 10 includes a first conductive layer 1023 and a second conductive layer 1024 . The frame body 1020 is disposed on the bottom plate 101 . The first step 1021 and the second step 1022 are located on a side (such as the bottom) of the frame body 1020 close to the bottom plate 101 . The first conductive layer 1023 is disposed on the first step 1021 , and the second conductive layer 1024 is disposed on the second step 1022 . The first conductive layer 1023 is connected to the corresponding second conductive layer 1024 . The first conductive layer 1023 is electrically connected to the light emitting chips 1030 in the light emitting chip group 103 , and the second conductive layer 1024 is electrically connected to an external power source. In this way, the external power supply can transmit the external current to the light-emitting chip 1030 through the second conductive layer 1024 and the first conductive layer 1023 in sequence, and excite the light-emitting chip 1030 to emit a laser beam.

For example, as shown in FIG. 2 and FIG. 3 , a part of the end of the frame body 1020 close to the bottom plate 101 protrudes toward the direction close to the light-emitting chipset 103 to form a first step 1021 , and the end of the frame body 1020 close to the bottom plate 101 The other part of one end protrudes away from the light-emitting chipset 103 to form a second step 1022 . The first conductive layer 1023 is disposed on the surface of the first step 1021 away from the bottom plate 101 , and the second conductive layer 1024 is disposed on the surface of the second step 1022 away from the bottom plate 101 .

As shown in FIG. 3 , the laser 10 further includes a conductive part 130 and a wire 104 . The conductive part 130 is disposed on the surface of the frame body 1020 , and the conductive part 130 is configured to electrically connect the first conductive layer 1023 and the second conductive layer 1024 . One end of the first conductive layer 1023 is connected to the second conductive layer 1024 through the conductive part 130 , and the other end of the first conductive layer 1023 is connected to the light emitting chip 1030 through the wire 104 . In this way, the external power supply can transmit the external current to the light emitting chip 1030 through the second conductive layer 1024 , the conductive portion 130 and the first conductive layer 1023 in sequence. The light emitting chip 1030 can emit a laser beam under the action of the external current. It should be noted that, in FIG. 3 , the position of the conductive portion 130 on the surface of the frame body 1020 is indicated by a dashed box. Of course, in some embodiments, the conductive part 130 can also be disposed inside the frame body 1020 .

In some embodiments, as shown in FIG. 3 , the surface (such as the top surface) of the first step 1021 away from the bottom plate 101 is flush with the surface (such as the top surface) of the second step 1022 away from the bottom plate 101, so that the first The conductive layer 1023 is connected to the second conductive layer 1024 . Alternatively, there is a height difference between the surface of the first step 1021 away from the bottom plate 101 and the surface of the second step 1022 away from the bottom plate 101 , which is not limited in this disclosure.

In some embodiments, in the direction away from the bottom plate 101, the height of the first step 1021 is approximately equal to the height difference between the first region 1011 and the second region 1012 in the bottom plate 101, or the height of the first step 1021 can be slightly lower than the height difference between the first region 1011 and the second region 1012 in the bottom plate 101, or, as shown in FIG. The height difference between the two regions 1012 . In this way, the distance between the light-emitting chip 1030 in the second region 1012 and the first conductive layer 1023 on the first step 1021 can be further shortened, so that the wire 104 between the light-emitting chip 1030 and the first conductive layer 1023 is shorter, thereby improving the efficiency of the wire. 104 strength.

In some embodiments, as shown in FIGS. 2 and 3 , at least part of the second step 1022 is located outside the bottom plate 101 . For example, at least part of the orthographic projection of the second step 1022 on the bottom plate 101 is located outside the bottom plate 101 . In this case, at least a part of the bottom surface of the second step 1022 is exposed, and at least part of the second conductive layer 1024 can be disposed on the exposed bottom surface of the second step 1022 and spaced from the bottom plate 101 . Of course, the whole of the second step 1022 can also be located on the bottom plate 101 , and the bottom surface of the second step 1022 can completely contact the surface of the bottom plate 101 , which is not limited in the present disclosure.

In some embodiments of the present disclosure, by setting the first step 1021 and the second step 1022, the area of the bottom surface of the frame body 102 can be increased, and the contact area between the frame body 102 and the bottom plate 101 can be increased, thereby improving the contact area between the bottom plate 101 and the frame body 102. The firmness after welding improves the reliability of the laser 10 .

In some embodiments, the frame body 102 is made of an insulating material (such as ceramics), so that the bottom plate 101 is insulated from the first conductive layer 1023 and the second conductive layer 1024 respectively, thereby preventing the bottom plate 101 from being electrically conductive with the first conductive layer 1023 or the second conductive layer 1024. The layer 1024 is short-circuited, affecting the conduction effect between the first conductive layer 1023 and the second conductive layer 1024 . In this way, the distance between the first conductive layer 1023 and the second conductive layer 1024 and the bottom plate 101 can be smaller, the height of the first step 1021 and the second step 1022 can be lower, shortening the distance between the light emitting chip 1030 and the first step 1021. The distance between the first conductive layer 1023 and the wire 104 between the light-emitting chip 1030 and the first conductive layer 1023 can be shorter, which improves the strength of the wire 104 . Moreover, the height of the frame body 102 may also be relatively low, which is beneficial to reducing the height of the laser 10 and facilitates miniaturization of the laser 10 .

In some embodiments, the frame body 102 may be in one piece. For example, the first step 1021 , the second step 1022 and the frame body 1020 in the frame body 102 are integrally formed. The ceramic material is processed by an etching (Etching) or a grinding (Burnishing) process to form the frame body 102 . After the frame body 102 is fabricated, the conductive portion 130 is formed by an electroplating process. Afterwards, the first conductive layer 1023 and the second conductive layer 1024 are formed on the first step 1021 and the second step 1022 respectively by deposition (Deposition), coating (Coating) or attachment (Coating) process, the first conductive layer 1023 And the second conductive layer 1024 is directly connected to the conductive part 130 .

Compared with opening a hole in the frame body 102 ′ to insert the conductive pin 109 ′, and filling the gap between the conductive pin 109 ′ and the opening with other materials, some embodiments of the present disclosure do not need to make a hole in the frame body 102 ′. 102, avoiding the risk of insufficient airtightness of the frame body 102 due to gaps generated during hole opening, improving the airtightness of the housing space 110 between the frame body 102 and the bottom plate 101, and simplifying the laser 10 preparation process.

In some embodiments, laser 10 includes a plurality of wires 104 . A part of the plurality of wires 104 is disposed between the first conductive layer 1023 and the light-emitting chip 1030 adjacent to the first conductive layer 1023 to connect the first conductive layer 1023 and the light-emitting chip 1030 . Another part of the plurality of wires 104 is arranged between the plurality of light emitting chips 1030 to connect the plurality of light emitting chips 1030 in series. For example, a part of the plurality of wires 104 is fixedly connected to the first conductive layer 1023 and the light-emitting chip 1030 adjacent to the first conductive layer 1023 through a ball bonding process.

When the wire 104 is welded by the ball bonding process, one end of the wire 104 is melted by a wire bonding device, and the melted end is pressed on the object to be connected. The wire bonding device can release ultrasonic waves to speed up the fixing of the wire 104 and the object to be connected. For example, the wire 104 is a gold wire, and the gold wire is connected to the first conductive layer 1023 through a bonding process.

In some embodiments of the present disclosure, since the surface (such as the bottom surface) of the first step 1021 where the first conductive layer 1023 is located close to the bottom plate 101 is in contact with the bottom plate 101 and is supported by the bottom plate 101 . Therefore, the first conductive layer 1023 is not suspended. In this way, when the wire 104 and the first conductive layer 1023 are connected through the wire bonding process, the first step 1021 can withstand a relatively strong pressure, avoiding the effect of the pressure generated by the first conductive layer 1023 and the first step 1021 in the wire bonding device Damage occurs under the wire, which improves the success rate of the wire bonding process. Moreover, the firmness of the wire 104 and the first conductive layer 1023 after welding is better, which improves the fixing effect of the wire 104 and increases the yield and reliability of the laser 10 .

In some embodiments, one wire 104 may be arranged between two parts connected by wire 104 in the laser 10, or two or more wires may be arranged between two parts connected by wire 104 in the laser 10. The wire 104 is used to improve the reliability of component connection and reduce the sheet resistance (Sheet Resistance) on the wire 104. For example, as shown in FIG. 2 and FIG. 5 , between the first conductive layer 1023 and the light-emitting chips 1030 close to the first conductive layer 1023, and between adjacent light-emitting chips 1030, two or more wires 104 can be passed through respectively. connected.

In some embodiments, the frame body 1020 may include multiple sub-side panels, and two adjacent sub-side panels among the multiple sub-side panels are connected. For example, as shown in FIG. 2, the frame body 1020 (such as the frame body 1020 of the first frame body 102A) includes a first sub-side panel 11, a second sub-side panel 12, a third sub-side panel 13 and a fourth sub-side panel. Side panels 14. Two adjacent sub-side panels among the first sub-side panel 11 , the second sub-side panel 12 , the third sub-side panel 13 and the fourth sub-side panel 14 are connected to form a closed ring structure. A first step 1021 and a second step 1022 are provided on two opposite sub-side panels (such as the first sub-side panel 11 and the third sub-side panel 13 ) in the first direction X. The first step 1021 and the second step 1022 are not provided on the two opposite sub-side panels (such as the second sub-side panel 12 and the fourth sub-side panel 14 ) in the second direction Y.

The first conductive layer 1023 is respectively arranged on the first step 1021 on the first sub-side plate 11 and the third sub-side plate 13, and the second conductive layer 1024 is respectively arranged on the first sub-side plate 11 and the third sub-side on the second step 1022 on the board 13 . Moreover, the first conductive layer 1023 and the second conductive layer 1024 located on the same sub-side panel (such as the first sub-side panel 11 or the third sub-side panel 13 ) are connected.

In the two opposite sub-side plates provided with the first conductive layer 1023 and the second conductive layer 1024, the first conductive layer 1023 and the second conductive layer 1024 on one sub-side plate can be used as positive pins to connect to an external power supply The first conductive layer 1023 and the second conductive layer 1024 on the other sub-side board can be used as negative pins to connect the negative pole of the external power supply. For example, the second conductive layer 1024 on the first sub-side plate 11 is connected to the positive pole of the external power supply, and the second conductive layer 1024 on the third sub-side plate 13 is connected to the negative pole of the external power supply.

It should be noted that, in FIG. 2 , only one first conductive layer 1023 is disposed on one first step 1021 and only one second conductive layer 1024 is disposed on one second step 1022 for illustration. Of course, in some embodiments, multiple first conductive layers 1023 may also be disposed on one first step 1021 , and multiple second conductive layers 1024 may also be disposed on one second step 1022 . Also, the plurality of first conductive layers 1023 corresponds to the plurality of second conductive layers 1024 . Each first conductive layer 1023 is connected to a corresponding second conductive layer 1024 , and the first conductive layer 1023 is insulated from other second conductive layers 1024 .

FIG. 8 is a block diagram of yet another laser according to some embodiments. Compared with FIG. 2 and FIG. 5 , the laser 10 in FIG. 8 only includes one frame 102 .

For example, as shown in FIG. 8 , a plurality of first conductive layers 1023 are disposed on the first step 1021 , and the plurality of first conductive layers 1023 are disposed at intervals. A plurality of second conductive layers 1024 are disposed on the second step 1022 , and the plurality of second conductive layers 1024 are arranged at intervals. Here, when the frame body 102 is made of an insulating material, by arranging the plurality of first conductive layers 1023 and the plurality of second conductive layers 1024 at intervals, the plurality of first conductive layers 1023 can be insulated from each other, and the plurality of second conductive layers 1023 can be insulated from each other. The two conductive layers 1024 are insulated from each other.

For another example, multiple first conductive layers 1023 are disposed on the first step 1021 , and an insulating material is disposed between adjacent first conductive layers 1023 . And the second step 1022 is provided with a plurality of second conductive layers 1024, and an insulating material is arranged between adjacent second conductive layers 1024, so that the plurality of first conductive layers 1023 are insulated from each other, and the plurality of second conductive layers 1024 Layers 1024 are insulated from each other.

The quantity of the first conductive layer 1023 and the second conductive layer 1024 in the frame body 102 may be related to the arrangement and circuit connection of the light emitting chips 1030 in the laser 10 .

For example, when the laser 10 is a multi-color laser and multiple light-emitting chips 1030 in different light-emitting chip groups 103 are respectively connected in series, the conductive layers (the first conductive layer 1023 and the second conductive layer 1024 connected by different light-emitting chip groups 103 ) are different, the two ends of each light-emitting chipset 103 are respectively connected to two first conductive layers 1023, and the two first conductive layers 1023 are respectively connected to the positive pole and the negative pole of the external power supply through the corresponding second conductive layer 1024. The two ends of the light-emitting chip group 103 refer to the two connection ends of the plurality of light-emitting chips 1030 connected in series. In the case of different conductive layers connected to different light-emitting chip groups 103, since one light-emitting chip group 103 requires at least two first conductive layers 1023 and at least two corresponding second conductive layers 1024 as positive and negative pins, Therefore, the number of first conductive layers 1023 and the number of second conductive layers 1024 may be twice the number of light emitting chip groups 103 , respectively.

For example, when the laser 10 includes a first light-emitting chip group 103A, a second light-emitting chip group 103B, and a third light-emitting chip group 103C, the first light-emitting chip group 103A, the second light-emitting chip group 103B, and the third light-emitting chip group 103C Red laser beam, green laser beam and blue laser beam are emitted respectively. Also, the laser 10 includes six sets of first conductive layers 1023 and second conductive layers 1024 . Three sets of first conductive layers 1023 and second conductive layers 1024 serve as three positive pins, and another three sets of first conductive layers 1023 and second conductive layers 1024 serve as three negative pins. Each light-emitting chipset 103 is connected to a positive pin and a negative pin.

Of course, the conductive layers connected to different light-emitting chip groups 103 may also be the same. In this way, each light-emitting chipset 103 can be connected to the same first conductive layer 1023 and the corresponding second conductive layer 1024, so that the number of first conductive layers 1023 and the number of second conductive layers 1024 can be smaller than that of the light-emitting chipset 103 respectively. twice the amount of

For example, when the laser 10 is a monochromatic laser and multiple light-emitting chip groups 103 emit laser beams of the same color, the laser 10 includes two sets of first conductive layers 1023 and second conductive layers 1024 . A set of first conductive layer 1023 and second conductive layer 1024 serves as a positive lead, and another set of first conductive layer 1023 and second conductive layer 1024 serves as a negative lead. A plurality of light-emitting chipsets 103 are respectively connected to the positive pin and the negative pin.

It should be noted that, when multiple light-emitting chips 1030 in the same light-emitting chip group 103 are connected in series, only one switch can control the on-off of the multiple light-emitting chips 1030, and the currents of the multiple light-emitting chips 1030 are equal. . In this way, the multiple light-emitting chips 1030 have lower requirements on the input current, and the input current can easily meet the threshold current of each light-emitting chip 1030 , which is convenient for the light-emitting chip 1030 to emit light.

The foregoing description mainly takes the multiple light-emitting chip groups 103 respectively corresponding to the multiple frames 102 as an example for illustration. Certainly, in some embodiments, the laser 10 may also include only one frame body 102 , and the multiple light-emitting chip groups 103 are located in the same accommodation space 110 between the frame body 102 and the bottom plate 101 . For example, as shown in FIG. 8, a plurality of light-emitting chip groups 103 include a first light-emitting chip group 103A, a second light-emitting chip group 103B, and a third light-emitting chip group 103C, and the first light-emitting chip group 103A, the second light-emitting chip group 103B And the third light-emitting chip group 103C is surrounded by the same frame body 102 . It should be noted that the structure of the frame body 102 is similar to that of the multiple frame bodies 102 described above, and will not be repeated here.

In addition, FIG. 8 is illustrated by taking a plurality of light-emitting chips 1030 arranged in a 2×7 matrix in one frame body 102 as an example. Of course, the plurality of light emitting chips 1030 may also be arranged in other ways, and the number of light emitting chips 1030 may also be other numbers, which are not limited in some embodiments of the present disclosure. Moreover, the laser 10 may also include two, four or more light-emitting chipsets 103, and the laser color emitted by the multiple light-emitting chipsets 103 in the laser 10 may also be other colors than red, green and blue, The present disclosure does not limit this.

In some embodiments, as shown in FIG. 8 , when the laser 10 is a multicolor laser, two or more light-emitting chip groups 103 in the laser 10 are arranged in two rows and multiple columns. For example, the first light-emitting chip group 103A is arranged in one row, and the second light-emitting chip group 103B and the third light-emitting chip group 103C are arranged in another row. In this case, as shown in FIG. 8 , the laser 10 further includes a plurality of adapters 120 . A plurality of transfer stations 120 are disposed on the base plate 101 and located between two adjacent rows of light-emitting chip groups 103 . A plurality of switching stations 120 are configured to switch the wires 104 .

For example, as shown in FIG. 8, a plurality of transfer stations 120 include a first transfer station 1201, a second transfer station 1202, and a third transfer station 1203, and the three transfer stations 120 are arranged along the first direction X one line.

One end of the first switching platform 1201 is connected to a first conductive layer 1023 located on the side of the frame body 102 away from the third light-emitting chip group 103C, and the other end of the first switching platform 1201 is connected to the second switching platform 1202 connected at one end. The one end of the second switching platform 1202 is connected to one end of the third light-emitting chipset 103C, and the other end of the third light-emitting chipset 103C is connected to a first The conductive layer 1023 is connected.

One end of the third switching platform 1203 is connected to another first conductive layer 1023 on the side of the frame body 102 close to the third light-emitting chip group 103C, and the other end of the third switching platform 1203 is connected to the second switching platform. The other end of 1202 is connected. The other end of the second switching platform 1202 is connected to one end of the second light-emitting chip group 103B, and the other end of the second light-emitting chip group 103B is connected to the other end of the frame body 102 away from the third light-emitting chip group 103C. A first conductive layer 1023 is connected.

Because the two ends of the second switching platform 1202 are respectively connected to the second light-emitting chip group 103B and the third light-emitting chip group 103C. Therefore, in order to avoid short-circuiting of the series circuits of different light-emitting chip groups 103 . The two ends of the second switching platform 1202 are insulated from each other.

It should be noted that FIG. 8 takes the laser 10 including three adapters 120 as an example for illustration. Of course, the number of switching stations 120 may also be one, four or more, and the number of switching stations 120 may be designed according to the distance of components to be switched, which is not limited in the present disclosure. Moreover, the second transfer station 1202 can also be located between the second light-emitting chip group 103B and the third light-emitting chip group 103C, so that the second light-emitting chip group 103B and the third light-emitting chip group 103C are connected to the second transfer station 1202 .

FIG. 9 is a block diagram of a switching station according to some embodiments. Fig. 10 is a block diagram of a second switching station according to some embodiments.

In some embodiments, the surface of the transfer table 120 away from the bottom plate 101 is conductive for transferring the wire 104 . For example, as shown in FIG. 9 , the adapter 120 includes an adapter body 1204 and an adapter layer 1205 . The adapter body 1204 is disposed on the bottom plate 101 , and the transfer layer 1205 is disposed on a side of the transfer body 1204 away from the base 101 , and the transfer layer 1205 is conductive. The main body 1204 of the transfer table is made of insulating material, such as ceramics, aluminum nitride or aluminum oxide. The transfer layer 1205 is made of gold or other metals.

In this case, as shown in FIG. 10 , the transfer layer 1205 in the second transfer station 1202 includes a first transfer part 1206 and a second transfer part 1207, and the first transfer part 1206 and the second transfer part Portions 1207 are insulated from each other. For example, the first transition portion 1206 and the second transition portion 1207 are arranged at intervals, and an insulating material is disposed between the first transition portion 1206 and the second transition portion 1207 . The first transfer portion 1206 corresponds to the one end of the second transfer platform 1202 , and the first transfer portion 1206 is connected to the third light-emitting chipset 103C. The second transfer part 1207 corresponds to the other end of the second transfer platform 1202, and the second transfer part 1207 is connected with the second light-emitting chip group 103B, so that the second light-emitting chip group 103B and the third light-emitting chip group 103C for normal transmission of electric current.

It should be noted that the size of the surface of the transfer table 120 away from the bottom plate 101 can be designed according to the arrangement requirements of the wires 104 (such as the number of the wires 104 ), which is not limited in the present disclosure.

In some embodiments, as shown in FIG. 3 , the laser 10 further includes a heat sink 105 and a reflective prism 106 . The reflective prism 106 and the heat sink 105 respectively correspond to the light emitting chip 1030 . The light emitting chip 1030 is disposed on the corresponding heat sink 105 , and the heat sink 105 is configured to dissipate heat from the light emitting chip 1030 . The heat sink 105 can be made of ceramic material. The reflective prism 106 is located on the light emitting side of the corresponding light emitting chip 1030 and is configured to reflect the laser beam emitted by the corresponding light emitting chip 1030 . The reflective prism 106 can reflect the laser beam emitted by the light-emitting chip 1030 in a direction away from the bottom plate 101 .

In some embodiments, as shown in FIG. 4 , the laser 10 further includes a light-transmitting layer 108 . The light-transmitting layer 108 is disposed on a side of the frame body 102 away from the base plate 101 , and the light-transmitting layer 108 is configured to close the accommodating space 110 surrounded by the frame body 102 and the base plate 101 . At least a part of the transparent layer 108 may be fixedly connected to the surface of the frame body 102 away from the bottom plate 101 . For example, a portion of the transparent layer 108 near its edge is provided with metal solder, and the metal solder is in contact with the surface of the frame body 102 away from the bottom plate 101 . Afterwards, the frame body 102 and the light-transmitting layer 108 are placed in the high-temperature furnace together to melt the metal solder, thereby welding the frame body 102 and the light-transmitting layer 108 .

In some embodiments, as shown in FIG. 4 , the laser 10 further includes a collimator lens group 107 . The collimator lens group 107 is located on a side of the frame body 102 away from the bottom plate 101 and is configured to collimate the incident laser beam. For example, as shown in Figure 4, the collimating lens group 107 is arranged on the side of the light-transmitting layer 108 away from the base plate 101, and the edge of the collimating lens group 107 is connected to the edge of the light-transmitting layer 108 by an adhesive (such as epoxy glue). Fixed connection.

The collimator lens group 107 includes a plurality of collimator lenses 1071 , and the plurality of collimator lenses 1071 correspond to the plurality of light emitting chips 1030 . The collimating lens 1071 is configured to collimate an incident laser beam. The plurality of collimating lenses 1071 may be in one piece. For example, as shown in FIG. 4 , the surface of the collimator lens group 107 away from the base plate 101 protrudes toward the direction away from the base plate 101 to form a plurality of convex arc surfaces, and the protrusion where each convex arc surface is located is a collimating lens 1071.

It should be noted that collimating the laser beam refers to adjusting the divergence angle of the laser beam so that the laser beam becomes an approximately parallel beam. The laser beam emitted by the light-emitting chip 1030 is reflected by the reflective prism 106 to the transparent layer 108 , and the transparent layer 108 transmits the laser beam to the collimating lens 1071 corresponding to the light-emitting chip 1030 . The laser beam incident on the collimating lens 1071 is collimated by the collimating lens 1071 and then exits.

It should be noted that when the height of the frame body 102 is reduced, the height of the laser 10 is also reduced accordingly, and the optical path of the laser beam emitted by the light emitting chip 1030 becomes shorter. In this way, when the laser beam emitted by the light-emitting chip 1030 is incident on the collimating lens 1071, the divergence angle of the laser beam is small, so that the size of the collimating lens 1071 in at least one dimension can be reduced, and the collimating lens 1071 can be avoided. Excessively elongated in shape. In this case, since the size of the collimating lens 1071 is small, the arrangement density of the collimating lens 1071 in the collimating lens group 107 can be increased, which is beneficial to reduce the volume of the collimating lens group 107 . Moreover, as the arrangement density of the collimating lenses 1071 increases, the distance between the light emitting chip 1030 and the corresponding reflective prism 106 can also be reduced, further reducing the volume of the laser 10 .

Those skilled in the art will understand that the disclosed scope of the present invention is not limited to the specific embodiments described above, and some elements of the embodiments can be modified and replaced without departing from the spirit of the application. The scope of the application is limited by the appended claims.

Claims

A laser comprising:

floor;

A plurality of light-emitting chipsets are arranged on the base plate;

At least one frame encloses the plurality of light-emitting chipsets, and the at least one frame includes:

The frame body is arranged on the bottom plate;

A first step, a part of one end of the frame body close to the bottom plate protrudes toward a direction close to the plurality of light-emitting chipsets to form the first step; and

The second step, the other part of the frame body close to the end of the bottom plate, protrudes in a direction away from the plurality of light-emitting chipsets, so as to form the second step;

at least one first conductive layer disposed on the first step, the at least one first conductive layer connected to the plurality of light emitting chip groups; and

At least one second conductive layer is arranged on the second step, the at least one second conductive layer is connected to the corresponding first conductive layer, and the at least one second conductive layer is connected to an external power source, so that the The external power supply is electrically connected to the plurality of light-emitting chipsets to provide driving current to the plurality of light-emitting chipsets.
The laser according to claim 1, wherein said at least one frame comprises:

A plurality of frames arranged in an array, the plurality of frames correspond to the plurality of light-emitting chip groups, the plurality of frames and the bottom plate form a plurality of accommodation spaces, and the plurality of light-emitting chips The groups are respectively located in the plurality of accommodating spaces, and the plurality of frames are sequentially fixedly connected to the bottom plate, so as to sequentially release the stress between the plurality of frame bodies and the bottom plate.
The laser according to claim 2, wherein the plurality of light-emitting chip groups are configured to emit laser beams of at least two different colors, and different light-emitting chip groups are configured to emit laser beams of different colors, the plurality of The light-emitting chip groups respectively include a plurality of light-emitting chips, and the plurality of light-emitting chips in the same light-emitting chip group are connected in series, and the two ends of the light-emitting chip group are respectively connected to different first conductive layers, and different light-emitting chip groups are connected to different first conductive layers. The conductive layer is connected.
The laser of claim 3, wherein,

The plurality of light-emitting chipsets include:

a first light-emitting chipset;

a second light-emitting chipset; and

a third light-emitting chipset;

The at least one frame includes:

The first frame body corresponds to the first light-emitting chipset;

A second frame corresponding to the second light-emitting chipset, a part of the first frame is aligned with the second frame; and

The third frame body corresponds to the third light-emitting chipset, another part of the first frame body is arranged in another row with the third frame body, and the second frame body is arranged in another row with the third frame body one line.
The laser according to claim 1, wherein the at least one frame body comprises a frame body, and the frame body and the base plate form an accommodating space, and the plurality of light-emitting chip groups are located in the accommodating space .
The laser according to claim 5, wherein the plurality of light-emitting chip groups are configured to emit laser beams of at least two different colors, and different light-emitting chip groups are configured to emit laser beams of different colors, the plurality of The light-emitting chip groups respectively include a plurality of light-emitting chips, and the plurality of light-emitting chips in the same light-emitting chip group are connected in series, and the two ends of the light-emitting chip group are respectively connected to different first conductive layers, and different light-emitting chip groups are connected to different first conductive layers. The conductive layer is connected.
The laser of claim 6, wherein said plurality of light emitting chipsets comprises:

a first light-emitting chipset;

a second light emitting chip group, a part of the first light emitting chip group is aligned with the second light emitting chip group; and

In the third light-emitting chip group, another part of the first light-emitting chip group is arranged in another row with the third light-emitting chip group, and the second light-emitting chip group is arranged in a row with the third light-emitting chip group.
The laser according to claim 7, further comprising:

An adapter station is arranged on the base plate and located in the accommodating space, the adapter station is connected to at least one light-emitting chipset among the plurality of light-emitting chipsets, and the adapter station is connected to One or more first conductive layers are connected, and the transfer station is configured to transfer at least one light-emitting chip group among the plurality of light-emitting chip groups.
The laser according to claim 8, wherein

The transfer platform is located between the first light-emitting chip group and at least one of the second light-emitting chip group or the third light-emitting chip group, and the second light-emitting chip group and the third light-emitting chip group One end of the chipset is respectively connected to the first conductive layer located on both sides of the frame, the other end of the second light-emitting chipset and the third light-emitting chipset are connected to the adapter, and the adapter is connected to The first conductive layer located on both sides of the frame body, the first conductive layer connected to the transfer platform, and the first conductive layer connected to the second light-emitting chip group and the one end of the third light-emitting chip group The first conductive layer is different.
The laser according to claim 9, wherein the parts of the same submount to which different groups of light-emitting chips are connected are insulated from each other.
The laser according to any one of claims 1, 2 or 5, wherein the plurality of light-emitting chipsets are configured to emit laser beams of the same color.
The laser according to any one of claims 1 to 11, wherein the frame body comprises:

A plurality of sub-side panels, two adjacent sub-side panels of the plurality of sub-side panels are connected, and the first step and the second step are provided on the opposite two sub-side panels of the plurality of sub-side panels, The first conductive layer and the second conductive layer located at the same sub-side plate are connected.
The laser of claim 12, wherein,

the at least one first conductive layer includes a plurality of first conductive layers, and the at least one second conductive layer includes a plurality of second conductive layers;

Two or more first conductive layers are respectively provided on the first steps in the two opposite sub-side plates, and two or more first conductive layers are respectively provided on the second steps in the two opposite sub-side plates. a second conductive layer, the two or more first conductive layers correspond to the two or more second conductive layers, the first conductive layer is connected to the corresponding second conductive layer, And it is insulated from other first conductive layers and other second conductive layers.
A laser according to any one of claims 1 to 13, further comprising:

a transition ring, arranged between the at least one frame body and the bottom plate, and fixedly connected with the at least one frame body and the bottom plate, the thermal expansion coefficient of the transition ring is between the thermal expansion coefficient of the bottom plate and the Between the thermal expansion coefficients of at least one frame body, the thermal expansion coefficient of the bottom plate is different from the thermal expansion coefficient of the at least one frame body.
A laser according to any one of claims 1 to 14, further comprising:

The conductive part is disposed on the surface of the frame body, and the conductive part is configured to electrically connect the at least one first conductive layer to the at least one second conductive layer.
A laser according to any one of claims 1 to 15, wherein at least part of the second step is outside the base plate.
A laser according to any one of claims 1 to 16, wherein,

The surface of the first step away from the bottom plate is flush with the surface of the second step away from the bottom plate, and the at least one first conductive layer is arranged on the surface of the first step away from the bottom plate On the surface, the at least one second conductive layer is disposed on the surface of the second step away from the bottom plate.
The laser according to any one of claims 1 to 17, wherein the base plate comprises:

the first area; and

The second area corresponds to the at least one frame body, the second area protrudes away from the bottom plate relative to the first area, the at least one frame body is arranged in the first area and surrounds all The second area, the plurality of light-emitting chip groups are located in the second area.
The laser of claim 18, wherein a height of the first step is equal to a height difference between the first region and the second region.
A laser according to any one of claims 1 to 19, further comprising:

a light-transmitting layer disposed on a side of the frame away from the bottom plate and connected to the frame; and

A collimating lens group is located on a side of the frame away from the bottom plate, and the collimating lens group is configured to collimate an incident laser beam.