WO2023284880A1

WO2023284880A1 - Laser and laser projection device

Info

Publication number: WO2023284880A1
Application number: PCT/CN2022/106133
Authority: WO
Inventors: 张昕; 田有良; 周子楠; 卢瑶
Original assignee: 青岛海信激光显示股份有限公司
Priority date: 2021-07-15
Filing date: 2022-07-15
Publication date: 2023-01-19

Abstract

A laser (100), comprising a base plate (111), a frame (112), a plurality of light-emitting chips (120), and a first conductive layer (113). The frame (112) is located on the base plate (111). The plurality of light-emitting chips (120) are located on the base plate (111) and surrounded by the frame (112), and configured to emit laser light. The first conductive layer (113) is disposed at a position of the base plate (111) corresponding to the frame (112), connected to the light-emitting chips (120), and configured to deliver a current to the light-emitting chips (120).

Description

Lasers and Laser Projection Equipment

This application requires application number 202122280817.7, Chinese patent application submitted on September 18, 2021, application number 202110801882.1, Chinese patent application submitted on July 15, 2021, application number 202111659813.8, and application number submitted on December 30, 2021 The priority of the Chinese patent application, the entire content of which is incorporated in this application by reference.

technical field

The present disclosure relates to the field of projection technology, in particular to a laser and laser projection equipment.

Background technique

With the development of laser projection equipment in the direction of miniaturization, portability and multi-function, miniature lasers (Multi Chip Laser Diode, referred to as MCL) are widely used due to their small footprint. MCL lasers have the characteristics of long life, high brightness, and high power. The same MCL laser can package light-emitting chips that emit different colors of light, so that one MCL laser can realize the functions of multiple monochromatic lasers.

Contents of the invention

In one aspect, some embodiments of the present disclosure provide a laser. The laser includes a bottom plate, a frame, a plurality of light emitting chips and a first conductive layer. The frame is located on the base plate. The plurality of light-emitting chips are located on the base plate and surrounded by the frame, and are configured to emit laser light. The first conductive layer is disposed at a position where the bottom plate corresponds to the frame, is connected to the light-emitting chip, and is configured to deliver current to the light-emitting chip.

On the other hand, some embodiments of the present disclosure provide a laser projection device. The laser projection device includes a light source, an optical machine and a lens. The light source includes a laser as described above, configured to emit an illumination beam to the light machine. The optical machine is configured to modulate the illumination beam emitted by the light source to obtain a projection beam. The lens is configured to image the projection beam.

Description of drawings

FIG. 1 is a structural diagram of a laser according to some embodiments;

Fig. 2 is the cross-sectional view of the laser shown in Fig. 1 along AA';

Figure 3 is a block diagram of another laser according to some embodiments;

Fig. 4 is a kind of sectional view along BB ' of the laser shown in Fig. 3;

Fig. 5 is a kind of sectional view along CC ' of the laser shown in Fig. 3;

Fig. 6 is another kind of cross-sectional view of the laser shown in Fig. 3 along BB';

Figure 7 is another cross-sectional view of the laser shown in Figure 3 along CC';

FIG. 8 is a structural diagram of another laser according to some embodiments;

FIG. 9 is a structural diagram of a reflective slope of a frame according to some embodiments;

Figure 10 is a top view of a laser according to some embodiments;

FIG. 11 is a structural diagram of another laser according to some embodiments;

Figure 12 is a top view of another laser according to some embodiments;

FIG. 13 is a structural diagram of yet another laser according to some embodiments;

Figure 14 is a block diagram of a backplane in a laser according to some embodiments;

Fig. 15 is a structural diagram of a connection relationship between a base plate and a light-emitting chip according to some embodiments;

Figure 16 is a structural diagram of yet another laser according to some embodiments;

Figure 17 is a structural diagram of another laser according to some embodiments;

Figure 18 is a block diagram of a substrate in a laser according to some embodiments;

Figure 19 is a perspective view of a laser according to some embodiments;

Figure 20 is a cross-sectional structural view of a laser according to some embodiments;

Figure 21 is another cross-sectional structure diagram of a laser according to some embodiments;

Fig. 22 is another cross-sectional structure diagram of a laser according to some embodiments;

Fig. 23 is another cross-sectional structure diagram of a laser according to some embodiments;

Figure 24 is a plan view of a laser according to some embodiments;

Figure 25 is another plan view of a laser according to some embodiments;

Figure 26 is another plan view of a laser according to some embodiments;

Figure 27 is a structural diagram of a mirror according to some embodiments;

Figure 28 is yet another cross-sectional structure diagram of a laser according to some embodiments;

Fig. 29 is a structural diagram of a laser projection device according to some embodiments.

detailed description

The technical solutions in some embodiments of the present disclosure will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are only some of the embodiments of the present disclosure, not all of them. All other embodiments obtained by persons of ordinary skill in the art based on the embodiments provided in the present disclosure belong to the protection scope of the present disclosure.

Throughout the specification and claims, unless the context requires otherwise, the term "comprise" and other forms such as the third person singular "comprises" and the present participle "comprising" are used Interpreted as the meaning of openness and inclusion, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "example", "specific examples" example)" or "some examples (some examples)" etc. are intended to indicate that specific features, structures, materials or characteristics related to the embodiment or examples are included in at least one embodiment or example of the present disclosure. Schematic representations of the above terms are not necessarily referring to the same embodiment or example. Furthermore, the particular features, structures, materials or characteristics described may be included in any suitable manner in any one or more embodiments or examples.

Hereinafter, the terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, a feature defined as "first" and "second" may explicitly or implicitly include one or more of these features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.

In describing some embodiments, the expressions "coupled" and "connected" and their derivatives may be used. For example, the term "connected" may be used in describing some embodiments to indicate that two or more elements are in direct physical or electrical contact with each other. As another example, the term "coupled" may be used when describing some embodiments to indicate that two or more elements are in direct physical or electrical contact. However, the terms "coupled" or "communicatively coupled" may also mean that two or more elements are not in direct contact with each other, but yet still co-operate or interact with each other. The embodiments disclosed herein are not necessarily limited by the context herein.

The use of "suitable for" or "configured to" herein means open and inclusive language that does not exclude devices that are suitable for or configured to perform additional tasks or steps.

As used herein, "about", "approximately" or "approximately" includes the stated value as well as the average within the acceptable deviation range of the specified value, wherein the acceptable deviation range is as determined by one of ordinary skill in the art. Determined taking into account the measurement in question and the errors associated with the measurement of a particular quantity (ie, limitations of the measurement system).

Some embodiments of the present disclosure provide a laser projection device. As shown in FIG. 29 , the laser projection device 1 includes a casing 11 (only a part of the casing is shown in FIG. 29 ), a light source 10 assembled in the casing 11, an optical machine 20, and lens 30. The light source 10 is configured to provide an illumination beam (laser beam). The optical machine 20 is configured to use an image signal to modulate the illumination beam provided by the light source 10 to obtain a projection beam. The lens 30 is configured to project the projection beam onto a projection screen or a wall for imaging.

The light source 10 includes at least one laser 100 configured to emit laser light. As shown in FIG. 1 , the laser 100 includes a package 110 and a plurality of light-emitting chips 120 packaged in the package 110 and arranged in an array.

Exemplarily, as shown in FIG. 1, a plurality of light emitting chips 120 are arranged in a row; or, as shown in FIG. 3, a plurality of light emitting chips 120 are arranged in two rows; or, as shown in FIG. 10, a plurality of light emitting chips 120 are arranged in two rows; or, as shown in FIG. 12 , a plurality of light emitting chips 120 are arranged in six rows; or, as shown in FIGS. 24 to 26 , a plurality of light emitting chips 120 are arranged in four rows.

The light-emitting chips 120 can be classified into red light-emitting chips, green light-emitting chips or blue light-emitting chips according to the color of the emitted laser light. The plurality of light emitting chips 120 include at least one of the above three types of light emitting chips, that is, the plurality of light emitting chips 120 may only include red light emitting chips, or may only include red light emitting chips and green light emitting chips, or may also include red light emitting chips, green light emitting chips, and green light emitting chips. Light emitting chips and blue light emitting chips.

The light emitting chip 120 generates more heat during the process of emitting laser light. If the heat cannot be dissipated in time, as the temperature of the light-emitting chip 120 increases, its threshold current will increase, and the photoelectric conversion efficiency will decrease, thereby affecting the service life of the light-emitting chip 120, and even directly causing damage to the light-emitting chip 120. When the laser 100 works for a long time, it is easy to cause catastrophic optical damage (Catastrophic optical damage, COD) of the light-emitting chip. Therefore, timely dissipation of the heat emitted by the light-emitting chip 120 is crucial to the reliability of the laser 100 . At present, as the volume of the laser 100 becomes smaller and smaller, more light-emitting chips 120 need to be installed in the smaller laser 100 , and the requirements for the heat dissipation effect generated by the light-emitting chips 120 are higher.

As shown in FIGS. 1 and 3 , the tube case 110 includes a bottom plate 111 and at least one annular frame 112 on the bottom plate 111 . At least one frame 112 and the base plate 111 enclose an accommodating space, and a plurality of light-emitting chips 120 are disposed on the base plate 111 and located in the accommodating space.

For example, as shown in FIG. 1 , the package 110 includes a frame 112, which is arranged on the bottom plate 111, and encloses an accommodating space with the bottom plate 111, and a plurality of light-emitting chips 120 are arranged on the bottom plate 111, and are located in within the containment space. For example, as shown in FIG. 3 , the tube case 110 includes two frames 112, the two frames 112 are arranged on the bottom plate 111, and each frame 112 and the bottom plate 111 enclose an accommodating space, and a plurality of light-emitting chips 120 are arranged In two rows, each row of light-emitting chips 120 is disposed on the base plate 111 and located in a corresponding accommodating space.

It should be noted that the heat dissipation efficiency of materials can be reflected by thermal resistance. Thermal resistance R represents the ability of a material per unit area and unit thickness to prevent heat flow. R=L/(K*A), where A represents the heat conduction area in square meters (that is, m ² ); L represents the length of the heat conduction path in meters (that is, m); K represents the thermal conductivity of the heat conduction object . Thermal conductivity K=d/R, where d represents the thickness of the material. For the same material, the thermal resistance R is proportional to the thickness d. Even for non-single materials, the general trend is that the thermal resistance of the material increases with the thickness of the material.

In the related art, the light-emitting chip is arranged in a packaging structure, and the bottom of the packaging structure is welded to the bottom plate by solder. In this way, the heat generated by the light-emitting chip needs to be dissipated to the outside through the bottom of the packaging structure, the solder, and the bottom plate. The heat dissipating path is long, the thermal resistance is large, and the dissipating efficiency is low. Since the thermal conductivity of solder is generally low, eg, only 50-60 watts per degree (W/mK), the effect of dissipating heat through the solder is poor. Moreover, air bubbles or cavities may be generated during the solder welding process, which will hinder heat dissipation and further reduce heat dissipation efficiency.

In some embodiments of the present disclosure, the light emitting chip 120 is disposed on the base plate 111 , and the heat generated by the light emitting chip 120 is dissipated to the outside through the base plate 111 . Compared with the heat generated by the light-emitting chip in the related art, which needs to be conducted to the bottom plate through the bottom of the packaging structure before being dissipated to the outside world through the bottom plate, the laser provided by some embodiments of the present disclosure reduces the objects that need to pass through when the heat is dissipated to the outside world. The heat conduction path is shortened, thereby improving the heat dissipation efficiency, reducing the risk of damage to the light-emitting chip 120 caused by heat accumulation, and improving the reliability of the laser 100 .

In some embodiments, the laser 100 further includes at least one first conductive layer 113 . The at least one first conductive layer 113 is disposed on the bottom plate 111 and located on a side of the outermost light-emitting chip 120 away from the adjacent light-emitting chip 120 . The present disclosure does not limit the number of the first conductive layer 113 , which may be one or more.

In some embodiments, the number of first conductive layers 113 is twice the number of rows of light emitting chips 120 .

For example, as shown in FIG. 1 , a plurality of light emitting chips 120 are arranged in a row along the X direction, and the laser 100 includes two first conductive layers 113 . Among the plurality of light emitting chips 120 , the two outermost light emitting chips 120 are respectively referred to as a first light emitting chip 121 and a second light emitting chip 122 . One first conductive layer 113 is located on a side of the first light-emitting chip 121 away from its adjacent light-emitting chip 120 , and the other first conductive layer 113 is located on a side of the second light-emitting chip 122 away from its adjacent light-emitting chip 120 .

For example, as shown in FIG. 3 , a plurality of light emitting chips 120 are arranged in two rows along the Y direction, and the laser 100 includes four first conductive layers 113 . In order from top to bottom, the two outermost light-emitting chips 120 in the first row of light-emitting chips 120 are respectively called the first light-emitting chip 121 and the second light-emitting chip 122, and the outermost two light-emitting chips 120 in the second row are called The two light emitting chips 120 are respectively referred to as a third light emitting chip 123 and a fourth light emitting chip 124 . A first conductive layer 113 is located on a side of the first light-emitting chip 121 away from its adjacent light-emitting chip 120, a first conductive layer 113 is located on a side of the second light-emitting chip 122 away from its adjacent light-emitting chip 120, and a first light-emitting chip 122 is located on a side away from its adjacent light-emitting chip 120. A conductive layer 113 is located on a side of the third light-emitting chip 123 away from its adjacent light-emitting chip 120 , and a first conductive layer 113 is located on a side of the fourth light-emitting chip 124 away from its adjacent light-emitting chip 120 .

The first conductive layer 113 is connected to the corresponding light-emitting chip 120, and the first conductive layer 113 supplies current to the light-emitting chip 120, and then the light-emitting chip 120 can emit laser light under the action of the current. It should be noted that the conductive layer described in some embodiments of the present disclosure is not a whole-layer structure that completely covers the bottom plate 111 , but a sheet-like structure with a smaller area and a thinner thickness.

In some embodiments, a conductive block may also be disposed on the bottom plate 111 , and the conductive block is connected to the first conductive layer 113 through a circuit inside the bottom plate 111 . An external power source is connected to the conductive block, and the current is transmitted to the first conductive layer 113 through the conductive block, and then to the light-emitting chip 120 connected to the first conductive layer 113 . The conductive block can be disposed on the edge area of the bottom board 111 , or other positions on the bottom board 111 that are convenient for connecting external circuits.

In some embodiments of the present disclosure, the frame 112 is in the shape of a square ring as an example for illustration. Of course, the frame 112 may also be in other ring shapes, such as a ring shape or a pentagonal ring shape, which is not limited in some embodiments of the present disclosure.

Referring to FIG. 2 , the laser 100 further includes at least one step 114 disposed on the inner wall of the frame 112 .

Exemplarily, the laser 100 includes a step 114 disposed on the inner wall of the frame 112 . For example, the step 114 is annular and surrounds the entire inner wall of the frame 112 . Exemplarily, the laser 100 includes a plurality of independent steps 114 , and the plurality of steps 114 are arranged at intervals on the inner wall of the frame 112 . For example, as shown in FIG. 2 , the laser 100 includes two steps 114 , and the two steps 114 are respectively arranged on two opposite inner walls of the frame 112 .

The laser 100 also includes at least one second conductive layer 115 and at least one conductive portion 116 , at least one second conductive layer 115 is disposed on the surface of the step 114 away from the bottom plate 111 , and at least one conductive portion 116 is disposed inside the frame 112 . The first conductive layer 113 is connected to the second conductive layer 115 through the corresponding conductive part 116 , and the second conductive layer 115 is connected to the corresponding light-emitting chip 120 through wires, so as to realize the connection between the first conductive layer 113 and the light-emitting chip 120 . The present disclosure does not limit the number of the second conductive layer 115 and the number of the conductive part 116 , which may be one or more. For example, the number of the second conductive layer 115 and the number of the conductive portion 116 are in one-to-one correspondence with the number of the first conductive layer 113 .

Exemplarily, the laser 100 includes a second conductive layer 115 disposed on the surface of the step 114 away from the bottom plate 111 .

Exemplarily, the laser 100 includes a plurality of second conductive layers 115 . On this basis, when the laser 100 includes a step 114, a plurality of second conductive layers 115 are arranged at intervals on the surface of the step 114 away from the bottom plate 111; when the laser 100 includes a plurality of steps 114, each second conductive layer 115 is arranged The surface of the corresponding step 114 is away from the bottom plate 111 .

It should be noted that the location of the second conductive layer 115 is related to the circuit connection method of the light emitting chip 120 . For example, as shown in FIG. 2 , the two light-emitting chips 120 respectively connected to the two second conductive layers 115 are the outermost two light-emitting chips 120 , which are respectively close to the two opposite inner walls of the frame 112 . The second conductive layer 115 is oppositely disposed. If the two light-emitting chips 120 respectively connected to the two second conductive layers 115 are two adjacent light-emitting chips 120 , both of which are close to an inner wall of the frame 112 , the two second conductive layers 115 are arranged at intervals.

In some embodiments, the laser 100 further includes at least one third conductive layer, and the at least one third conductive layer is disposed on the surface of the frame 112 close to the bottom plate 111 . The position of the third conductive layer corresponds to the position of the first conductive layer 113 and is connected to the corresponding first conductive layer 113 . The present disclosure does not limit the quantity of the third conductive layer, which may be one or more. For example, the number of the third conductive layers corresponds to the number of the first conductive layers 113 one to one.

For example, the area of the third conductive layer is smaller than that of the corresponding first conductive layer 113 , and the third conductive layer is soldered to the corresponding first conductive layer 113 by conductive solder (such as gold-tin solder). Both ends of the conductive part 116 are respectively electrically connected to the corresponding third conductive layer and the second conductive layer 115, so that the light-emitting chip 120 arranged on the bottom plate 111 is connected to the second conductive layer 115 through a wire, and then the light-emitting chip 120 can pass through the conductive part. 116 and the third conductive layer are connected to the first conductive layer 113 on the base plate 111 , so as to realize the connection between the light emitting chip 120 and the external power supply.

In some embodiments, multiple light-emitting chips 120 in the laser 100 can be arranged in one or more rows, each row of light-emitting chips 120 can be connected in series, and the color of the laser light emitted by each row of light-emitting chips 120 can be the same. The two outermost light-emitting chips 120 in each row of light-emitting chips 120 are respectively connected to the adjacent second conductive layer 115, one second conductive layer 115 is connected to the positive electrode of the power supply through the corresponding first conductive layer 113, and the other second conductive layer 115 The layer 115 is connected to the negative pole of the power supply through the corresponding first conductive layer 113 . In this way, each row of light-emitting chips 120 can be connected to the positive pole and the negative pole of the power supply, and then can receive the current delivered by the power supply.

In some embodiments, the material of the frame 112 in the laser 100 includes ceramics, for example, the material of the frame 112 may be aluminum oxide and/or silicon nitride ceramic materials. Since aluminum oxide or silicon nitride ceramic materials have relatively high hardness and large thermal conductivity, they can not only protect the light-emitting chip 120 arranged in the frame 112, but also quickly reduce the heat produced by the light-emitting chip 120 when emitting light. The heat is exported, improving the performance of the laser 100 . Of course, the frame 112 may also be made of other ceramic materials with relatively high hardness and good thermal conductivity, which is not limited in this embodiment of the present disclosure.

Compared with the current multi-chip laser diode (multi_chip Laser Diode, MCL) type laser, the laser 100 provided in the embodiment of the present disclosure is a ceramic packaged laser, and the current is input through the first conductive layer 113 on the base plate 111, without the need for The conductive pins are arranged on the frame 112 , the structure of the laser 100 is simple, and it is more conducive to the airtightness of the accommodating space of the laser 100 , and the packaged laser 100 is firm and reliable, and the risk of damage is low.

The heat conduction rate of this kind of laser 100 is faster, which helps to dissipate the heat generated by the light-emitting chip 120 and reduces the risk of damage to the light-emitting chip 120 . Since the heat dissipation effect is better, and the number of light-emitting chips 120 that can be provided in the smaller laser 100 is larger, it is more favorable for the laser 100 to be used in high-power devices. Due to its small volume, its assembly flexibility is high, and multiple lasers 100 can be used in series or in parallel, which can improve the quality of light emission while ensuring a small overall volume.

In some embodiments, the material of the bottom plate 111 includes metal, and the thickness of the bottom plate 111 may range from 1 mm to 2 mm. Exemplarily, the material of the bottom plate 111 includes copper, such as oxygen-free copper. Oxygen-free copper refers to a copper material with an oxygen content of not more than 0.003%, a total impurity content of not more than 0.05%, a copper purity of more than 99.95%, and a thermal conductivity of 401W/mK. Exemplarily, the material of the bottom plate 111 includes one or more of aluminum, aluminum nitride and silicon carbide.

It should be noted that the heat generated by the light-emitting chip 120 needs to be dissipated through the bottom plate 111, and the thermal conductivity of copper is as high as 400 watts per meter degree (W/mK). Heat dissipates more quickly.

In some other embodiments, the material of the bottom plate 111 includes ceramics. Because ceramic materials have good insulation and higher thermal conductivity, and are more resistant to high temperature and corrosion, the use of ceramic materials to make the base plate 111 in the laser 100 can help the heat generated by the light-emitting chip 120 to dissipate faster, ensuring that the laser 100 reliability.

In some embodiments, as shown in FIGS. 1 and 3 , the laser 100 further includes a plurality of heat sinks 130 . A plurality of heat sinks 130 are disposed on the bottom plate 111 , each light emitting chip 120 is located on the corresponding heat sink 130 , and the heat sink 130 is configured to assist the corresponding light emitting chip 120 to dissipate heat. Exemplarily, a plurality of heat sinks 130 corresponds to a plurality of light emitting chips 120 one by one.

In some embodiments, the light emitting chip 120 is fixed on the heat sink 130 by welding or pasting. For example, the light-emitting chip 120 and the heat sink 130 are welded by a high-precision eutectic welding machine to form a chip assembly, also called a Cos (Chip on submount, Cos for short) assembly.

It should be noted that the heat sink 130 is provided between the light-emitting chip 120 and the bottom plate 111. Since the heat sink 130 has a larger thermal conductivity, the heat generated when the light-emitting chip 120 emits light can be quickly exported to prevent the heat from affecting the light. Damage to chip 120 . The material of the heat sink 130 may include metal, aluminum nitride, silicon carbide or a ceramic material with relatively large thermal conductivity.

In some embodiments, the size of the heat sink 130 in the X direction is larger than the size of the light emitting chip 120 in the X direction, the size of the heat sink 130 in the Y direction is larger than the size of the light emitting chip 120 in the Y direction, and the thickness of the heat sink 130 is 0.1-0.3mm, such as 0.2mm.

The light-emitting chip 120 and the heat sink 130 can be fixed in such a way that the entire bottom surface of the light-emitting chip 120 is fixed on the surface of the heat sink 130 away from the bottom plate 111, or the bottom surface of the light-emitting chip 120 away from the light outlet is fixed on the heat sink 130 away from the bottom plate 111. on the surface.

When the entire bottom surface of the light-emitting chip 120 is fixed on the surface of the heat sink 130 away from the bottom plate 111, the contact area between the light-emitting chip 120 and the heat sink 130 is larger, thereby increasing the area of the light-emitting chip 120 supported by the heat sink 130 , improving the setting stability of the light emitting chip 120 . When the bottom surface of the light-emitting chip 120 away from the light outlet is fixed on the surface of the heat sink 130 away from the bottom plate 111, since the bottom surface of the light-emitting chip 120 is not in contact with any object, the heat generated when the light-emitting chip 120 emits light can be quickly dissipated. The heat dissipation effect of the light emitting chip 120 is improved.

In some embodiments, please continue to refer to FIG. 1 and FIG. 3 , the laser 100 further includes a plurality of reflective prisms 140 . Each reflective prism 140 is located on the light-emitting side of the corresponding light-emitting chip 120 . The light-emitting chip 120 emits laser light to the corresponding reflective prism 140 , and the reflective prism 140 is configured to reflect the laser light in a direction away from the base plate 111 (such as the Z direction in FIG. 4 ). Exemplarily, a plurality of reflective prisms 140 corresponds to a plurality of light emitting chips 120 one by one.

In some embodiments, as shown in FIG. 2 and FIG. 28 , the laser 100 further includes a light-transmitting sealing layer 150 and a collimating lens group 160 . The light-transmitting sealing layer 150 is configured to seal the accommodating space enclosed by the base plate 111 and the frame 112 . The bottom plate 111, the frame 112 and the light-transmitting sealing layer 150 form a closed space, and a plurality of light-emitting chips 120 are arranged in the closed space, which can prevent the light-emitting chips 120 from being corroded by oxygen in the outside air and prolong the service life of the light-emitting chips 120 .

For example, the edge of the light-transmitting sealing layer 150 is directly fixed to the surface of the frame 112 away from the bottom plate 111 to seal the accommodating space. The material of the light-transmitting sealing layer 150 is a light-transmitting material, including glass or resin material. Exemplarily, the light-transmitting sealing layer 150 is a sapphire cover plate, which not only has good light transmittance, but also has good thermal conductivity and mechanical properties.

In some embodiments, in order to improve the performance of the laser 100 , the material of the light-transmitting sealing layer 150 can also be selected according to the light-emitting characteristics of the light-emitting chip 120 . For example, when the light-emitting chip 120 is a red light-emitting chip that emits red laser light, the material of the light-transmitting sealing layer 150 can be selected from a material that is more transparent to red laser light.

The collimating lens group 160 includes a plurality of collimating lenses configured to collimate the incident laser light. For example, the plurality of collimating lenses are integrally formed. On this basis, the side of the collimating lens group 160 away from the bottom plate 111 has a plurality of convex arc surfaces, and the part where each convex arc surface is located serves as a collimating lens. It should be noted that the collimation of the light is to adjust the divergence angle of the light so that the light is adjusted as close as possible to parallel light. The laser light emitted by the light-emitting chip 120 can be reflected by the corresponding reflective prism 140 to the light-transmitting sealing layer 150, and then the light-transmitting sealing layer 150 can transmit the laser light to the collimating lens corresponding to the light-emitting chip 120 in the collimating lens group 160, After being collimated by the collimating lens, the laser 100 emits light. Exemplarily, a plurality of collimating lenses corresponds to a plurality of light emitting chips 120 one by one.

In some embodiments, as shown in FIG. 4 and FIG. 5 , the laser 100 further includes at least one boss 117, at least one boss 117 is arranged on the bottom plate 111, surrounded by the corresponding frame 112, and a plurality of light-emitting chips 120 are arranged on at least one boss 117 .

Exemplarily, the laser 100 includes a boss 117 . The boss 117 is disposed on the bottom plate 111 and surrounded by the frame 112 , and a plurality of light-emitting chips 120 are disposed on the surface of the boss 117 away from the bottom plate 111 . Exemplarily, as shown in FIG. 4 , the laser 100 includes two bosses 117 . The two bosses 117 are both disposed on the bottom plate 111 , and each boss 117 is surrounded by a corresponding frame 112 . A plurality of light-emitting chips 120 are arranged in two rows, and each row of light-emitting chips 120 is disposed on a surface of a corresponding boss 117 away from the bottom plate 111 .

It can be understood that, when the laser 100 includes a heat sink 130 , each light emitting chip 120 is disposed on the boss 117 through a corresponding heat sink 130 .

In some embodiments, the size of each boss 117 is the same, and the number of light-emitting chips 120 disposed on each boss 117 is equal. For example, each boss 117 is provided with 7 light-emitting chips 120 arranged in a row. In some other embodiments, the size of each boss 117 may also be different, the number of light-emitting chips 120 disposed on each boss 117 may also be different, and the arrangement of the light-emitting chips 120 may also be different.

Taking a row of light-emitting chips 120 arranged on each boss 117, and the light-emitting chips 120 are connected in series as an example, each boss 117 is provided with The first conductive layer 113, that is, each boss 117 is located between two first conductive layers 113, and the first conductive layer 113 is arranged on the area outside the boss 117 in the bottom plate 111, that is, the non-bump in the bottom plate 111 area. The two outermost light-emitting chips 120 on the boss 117 are respectively connected to the two first conductive layers 113, and the positive pole and negative pole of the external power supply are respectively connected to the two first conductive layers 113, so as to realize the light-emitting chips 120 in this row. Input Current.

If multiple rows of light-emitting chips 120 are disposed on each boss 117 , the number of first conductive layers 113 on the periphery of each boss 117 is increased, for example, twice the number of rows of light-emitting chips 120 . In this arrangement, the connection between the light-emitting chips 120 in each row and the first conductive layer 113 is similar to the connection above, and will not be repeated here.

For example, the side of each boss 117 is fixed to the inner wall of the corresponding frame 112 , so that the frame 112 is fixed on the bottom plate 111 . For example, the side of each boss 117 is welded with the inner wall of the corresponding frame 112 by solder.

In some embodiments, the boss 117 may be a rectangular boss, and the surface of the boss 117 used for setting the light-emitting chip 120 is called the top surface of the boss 117, and the other faces of the boss 117 connected to the top surface are It is the side of the boss 117. When the frame 112 is fixed on the bottom plate 111, the third conductive layer on the surface of the frame 112 close to the bottom plate 111 can be aligned with the first conductive layer 113 on the bottom plate 111, and then the frame 112 is set on the corresponding boss 117 the periphery. Furthermore, the inner wall of the frame 112 can be welded to the side of the boss 117 to ensure the airtightness at the bottom of the accommodating space surrounded by the frame 112 and the corresponding boss 117. And the third conductive layer on the surface of the frame 112 close to the bottom plate 111 and the first conductive layer 113 on the bottom plate 111 are welded with conductive solder to ensure the conduction between the third conductive layer and the first conductive layer 113 .

For example, the bottom plate 111 and the boss 117 are integrally formed, and the thickness of the bottom plate 111 may range from 1 mm to 2 mm. It should be noted that the thickness of the bottom plate 111 refers to the thickness of the portion of the bottom plate 111 where the boss 117 is located, that is, the thickness of the thickest portion of the bottom plate 111 . For example, the boss 117 in the bottom plate 111 can be formed by etching or machining. For example, the height of the boss 117 may range from 300 microns to 500 microns, and the thickness of the frame 112 may range from 2 mm to 3 mm. Since the material of the frame 112 includes ceramics, the hardness of the material is low, so the thickness of the frame 112 needs to be thicker to ensure the durability of the laser 100 .

In some other embodiments, as shown in FIGS. 6 and 7 , the bottom plate 111 has at least one groove 118 . A corresponding frame 112 is disposed in at least one groove 118 , and a plurality of light-emitting chips 120 are located in an accommodating space formed by the frame 112 and the groove 118 .

Exemplarily, the bottom plate 111 includes a groove 118 . A frame 112 is disposed in the groove 118 , and a plurality of light-emitting chips 120 are disposed on the bottom surface of the groove 118 and located in an accommodating space formed by the frame 112 and the groove 118 . Exemplarily, as shown in FIG. 6 , the bottom plate 111 includes two grooves 118 . A frame 112 is arranged in each groove 118, and a plurality of light-emitting chips 120 are arranged in two rows. placed in the space.

It can be understood that, when the laser 100 includes the heat sink 130 , each light emitting chip 120 is disposed on the bottom surface of the corresponding groove 118 through the corresponding heat sink 130 .

In some embodiments, the size of each groove 118 is the same, and the number of light emitting chips 120 disposed in each groove 118 is equal, for example, 7 light emitting chips 120 are arranged in a row. In other embodiments, the size of each groove 118 may also be different, the number of light emitting chips 120 disposed in each groove 118 may also be different, and the arrangement of the light emitting chips 120 may also be different.

Taking a row of light-emitting chips 120 arranged in each groove 118, and the light-emitting chips 120 are connected in series as an example, two first conductive layers 113 are arranged on the bottom surface of the groove 118, and the two first conductive layers 113 are respectively It is located on both sides of the entire row of light-emitting chips 120 along the row direction (X direction in FIG. 7 ) of the light-emitting chips 120 . The two outermost light-emitting chips 120 in the groove 118 are respectively connected to the two first conductive layers 113, and the positive and negative electrodes of the external power supply are respectively connected to the two first conductive layers 113, so as to realize the light-emitting chips 120 in the row. Input Current.

If multiple rows of light-emitting chips 120 are disposed in the groove 118 , the number of first conductive layers 113 in each groove 118 is increased, for example, twice the number of rows of light-emitting chips 120 . The connection method between each row of light-emitting chips 120 and the first conductive layer 113 in this arrangement method is similar to the connection method described above, which will not be repeated here.

For example, the groove wall of each groove 118 is fixed to the outer wall of the corresponding frame 112 , so that the frame 112 is fixed on the bottom plate 111 . For example, the groove wall of each groove 118 is welded with the outer wall of the corresponding frame 112 by solder.

In some embodiments, the groove 118 is a rectangular groove, the surface of the groove 118 used for setting the light-emitting chip 120 is the bottom surface of the groove 118, and the other surface of the groove 118 connected to the bottom surface is the groove 118 side, that is, the groove wall. When the frame 112 is fixed on the bottom plate 111, the third conductive layer on the surface of the frame 112 close to the groove 118 can be aligned with the first conductive layer 113 in the groove 118, and then the frame 112 is placed in the groove 118 middle. Furthermore, the outer wall of the frame 112 and the groove wall of the groove 118 may be welded to ensure the airtightness of the accommodating space surrounded by the frame 112 and the corresponding groove 118 . And the third conductive layer on the surface of the frame 112 close to the groove 118 is welded to the first conductive layer 113 in the groove 118 by conductive solder to ensure the conduction between the third conductive layer and the first conductive layer 113 .

Exemplarily, the depth of the groove 118 ranges from 300 microns to 500 microns, and the thickness of the bottom plate 111 may range from 1 mm to 2 mm. It should be noted that the thickness of the bottom plate 111 refers to the thickness of the portion of the bottom plate 111 other than the groove 118 , that is, the thickness of the thickest portion of the bottom plate 111 . For example, the groove 118 in the bottom plate 111 can be formed by etching or machining.

Exemplarily, the thickness of the frame 112 ranges from 1 mm to 2 mm. Since the frame 112 is located in the groove 118 and fixed to the groove wall of the groove 118 , the frame 112 can be supported by the groove wall of the groove 118 . Moreover, due to the protection of the groove wall, the frame 112 will not be impacted by external objects, so the required strength of the frame 112 is low, and the thickness of the frame 112 can be relatively thin. In this way, more light-emitting chips 120 can be disposed in the groove 118 , and more light-emitting chips 120 can be disposed in the groove 118 , thereby improving the luminous efficiency of the laser 100 . In addition, the light-emitting chip 120 is disposed in the groove 118 of the bottom plate 111, so the thickness of the portion of the bottom plate 111 where the light-emitting chip 120 is located is relatively small. The heat generated when the light-emitting chip 120 emits laser light can be dissipated to the outside along the bottom of the groove 118. The dissipating path is short and the heat dissipating efficiency is high, which can reduce the risk of damage to the light-emitting chip 120 caused by heat accumulation, and further improve the The reliability of the laser 100.

In this arrangement, the light-emitting chip 120 is enclosed in the base plate 111 with high strength, so the risk of the laser 100 being damaged by collision is low, and the durability of the laser 100 is high. Moreover, the overall thickness of the laser 100 is the sum of the thicknesses of the bottom plate 111 , the light-transmitting sealing layer 150 and the collimator lens group 160 , so the laser 100 is relatively thin, which is beneficial to the miniaturization and thinning of the laser 100 .

Exemplarily, in the laser 100 shown in FIGS. The conductive blocks are connected in series or in parallel to realize the series or parallel connection of the two rows of light emitting chips 120 surrounded by the two frames 112 . In this way, the ways of using the laser 100 can be enriched, and the flexibility of using the laser 100 can be improved.

In the following, a plurality of light-emitting chips 120 are arranged in multiple rows, and the package 110 includes a frame 112 as an example for illustration.

In some embodiments, as shown in FIG. 8 , the inner wall of the frame 112 opposite to the light outlet of the light-emitting chip 120 is a reflective slope, and the laser light emitted by the multiple light-emitting chips 120 is reflected by the reflective slope of the frame 112 and passes through the light-transmitting sealing layer. 150 shots.

Since the inner wall of the frame 112 opposite to the light outlet of the light-emitting chip 120 is a reflective slope, it can reflect the laser light generated by the light-emitting chip 120. Therefore, it is not necessary to arrange the reflective prism 140 on the base plate 111, which reduces the impact of the reflective prism 140 on the base plate 111. Occupying the area enables more light-emitting chips 120 to be arranged on the bottom plate 111 with the same area, thereby increasing the power of the laser 100 .

It should be noted that the vertical distance between the surface of the frame 112 away from the bottom plate 111 and the surface of the frame 112 close to the bottom plate 111 is not less than 3 mm, that is, the height of the frame 112 is not less than 3 mm, for example, it can be 4 mm. In addition, the reflective slope of the frame 112 may be as shown in FIG. 9 . In this way, the light path of the laser light emitted by the light-emitting chip 120 can be changed after being reflected by the reflective slope of the frame 112 , so that the laser light can be emitted from the light-transmitting sealing layer 150 .

For example, the frame 112 can be a square ring structure. At this time, the frame 112 has four inner walls, and the four inner walls of the frame 112 can be set as reflective slopes, or part of the four inner walls of the frame 112 The inner wall is set as a reflective slope.

Referring to FIG. 8 , the first inner wall 1121 and the second inner wall 1122 oppositely disposed in the frame 112 are configured as reflective slopes. The light outlets of the first part of the light emitting chips 120 in the plurality of light emitting chips 120 are opposite to the first inner wall 1121 , and the light outlets of the second part of the light emitting chips 120 are opposite to the second inner wall 1122 . The laser light emitted by the first part of the light-emitting chip 120 is incident on the first inner wall 1121 and emitted from the light-transmitting sealing layer 150 after being reflected by the first inner wall 1121; the laser light emitted by the second part of the light-emitting chip 120 is incident on the second inner wall 1122 and transmitted through the After being reflected by the two inner walls 1122 , it emits from the light-transmitting sealing layer 150 .

Exemplarily, FIG. 10 shows 2 rows of light emitting chips 120 . The row of light-emitting chips 120 on the left is the first part of the light-emitting chips 120 , the light outlet of which faces the first inner wall 1121 . In this way, the laser light generated by the row of light-emitting chips 120 on the left can be incident on the first inner wall 1121 , reflected by the first inner wall 1121 and emitted from the light-transmitting sealing layer 150 . The right row of light-emitting chips 120 is the second part of the light-emitting chips 120, and its light outlet faces the second inner wall 1122, so that the laser light generated by the right row of light-emitting chips 120 can enter the second inner wall 1122 and pass through the second inner wall. 1122 is also emitted from the light-transmitting sealing layer 150 after being reflected.

In some embodiments, the included angle between the reflective slope of the frame 112 and the plane where the bottom plate 111 is located may be 45 degrees. For example, the included angle between the first inner wall 1121 and the second inner wall 1122 of the frame 112 and the plane where the bottom plate 111 is located is 45 degrees. In this way, the laser light emitted by the plurality of light-emitting chips 120 in the closed space surrounded by the base plate 111, the frame 112 and the light-transmitting sealing layer 150 enters the reflective slope of the frame 112 at an incident angle of 45 degrees, and passes through the frame 112. After being reflected by the reflective slope, the light is emitted in a direction perpendicular to the plane where the light-transmitting sealing layer 150 is located.

In some embodiments, referring to FIG. 11 , a reflective slope can be obtained by spraying a reflective film 1123 on the inner wall of the frame 112 , which can improve the reflective effect of the reflective slope of the frame 112 for laser light.

Exemplarily, the reflective film 1123 sprayed on the inner wall of the frame 112 is made of aluminum oxide and/or silicon dioxide, which can be sprayed on the inner wall of the frame 112 by magnetron sputtering. Of course, the material of the reflective film 1123 may also be other materials capable of reflecting laser light, which is not limited in this embodiment of the present disclosure.

In some embodiments, referring to FIG. 8 and FIG. 11 , the surface of the bottom plate 111 provided with the light-emitting chips 120 is a horizontal plane. The distance between them is equal.

In the case that one reflective slope corresponds to a row or column of light emitting chips 120, according to the number of reflective slopes included in the frame 112, the plurality of light emitting chips 120 can be arranged in a corresponding number of columns and rows. For example, as shown in FIG. 10 , when the first inner wall 1121 and the second inner wall 1122 of the frame 112 are reflective slopes, the plurality of light-emitting chips 120 can be arranged in two rows, and each row of light-emitting chips 120 corresponds to a reflective slope . Of course, if the four inner walls of the frame 112 are reflective slopes, the plurality of light-emitting chips 120 can be arranged in two rows and two columns, wherein each column of light-emitting chips 120 in the two columns corresponds to a reflective slope, and the plurality of light-emitting chips 120 in the two rows Each row of light-emitting chips 120 corresponds to a reflective slope.

It can be understood that the reflective slope corresponds to one or more rows of light-emitting chips 120, which means that the light outlets of the one or more rows of light-emitting chips 120 are all facing the reflective slope; the reflective slope corresponds to one or more columns of light-emitting chips 120. Yes, the light outlets of the one or more rows of light-emitting chips 120 are all facing the reflective slope.

It should be noted that the distance between each light-emitting chip 120 in a column or row of light-emitting chips 120 and the corresponding reflective slope of the frame 112 may be equal or unequal, which is not limited in this embodiment of the present disclosure.

In some embodiments, the surface of the bottom plate 111 provided with the light-emitting chips 120 is a horizontal plane, and a reflective slope in the frame 112 corresponds to multiple columns or rows of the light-emitting chips 120 . At this time, multiple columns or rows of light-emitting chips 120 corresponding to the same reflective slope of the frame 112 may be staggered, that is, no other light-emitting chips 120 are disposed between each light-emitting chip 120 and the corresponding reflective slope. In this way, the laser light generated by each light-emitting chip 120 will not be blocked by other light-emitting chips 120, thereby ensuring that the laser light emitted by each light-emitting chip 120 can be incident on the corresponding reflective slope of the frame 112 and pass through the reflective slope of the frame 112. After reflection, it is emitted from the light-transmitting sealing layer 150 .

For example, referring to FIG. 12 , the first inner wall 1121 and the second inner wall 1122 of the frame 112 are reflective slopes, and a plurality of light emitting chips 120 are arranged in six rows. From left to right, the light emitting chips 120 in the first to third columns correspond to the first inner wall 1121 , and the light emitting chips 120 in the fourth to sixth columns correspond to the second inner wall 1122 . The first column of light emitting chips 120 , the second column of light emitting chips 120 and the third column of light emitting chips 120 are staggered, and the fourth column of light emitting chips 120 , fifth column of light emitting chips 120 and sixth column of light emitting chips 120 are staggered. It should be noted that FIG. 12 is only an example of disposing light-emitting chips 120 on a horizontal bottom plate 111 according to an embodiment of the present disclosure, and multiple rows of light-emitting chips 120 can also be arranged on a horizontal bottom plate 111 in other ways. The disclosed embodiments are not limited in this regard.

In other embodiments, as shown in FIG. 13 , FIG. 16 and FIG. 17 , the distance between each light-emitting chip 120 and the light-transmitting sealing layer 150 among the plurality of light-emitting chips 120 disposed on the bottom plate 111 and the distance between the corresponding light-emitting chips 120 The distance between the inner walls corresponding to the frame 112 is inversely proportional. It should be noted that the inner wall of the frame 112 corresponding to the light emitting chip 120 refers to the inner wall opposite to the light outlet of the light emitting chip 120 .

In some embodiments, referring to FIG. 13 , the bottom plate 111 includes a plurality of stepped surfaces, and each of the plurality of light emitting chips 120 is disposed on a corresponding stepped surface.

It should be noted that only 6 light-emitting chips 120 are shown in FIG. 13 , but the number of light-emitting chips 120 in the laser 100 of the embodiment of the present disclosure is not limited to 6, and can be 15, 20 or more. The embodiment does not limit this. In addition, the distance N shown in FIG. 13 is the distance between one light-emitting chip 120 of the plurality of light-emitting chips 120 and the light-transmitting sealing layer 150, and the distance M is the distance between one light-emitting chip 120 of the plurality of light-emitting chips 120 and the frame 112. The distance between the corresponding inner walls.

In some embodiments, as shown in FIG. 14 , multiple step surfaces can be etched on a whole copper plate by etching. Exemplarily, each step surface is a rectangle. The size of each step surface in the X direction is not smaller than the size of the light-emitting chip 120 in the light emitting direction, and the size of each step surface in the Y direction is equal to the size of the bottom plate 111 in the Y direction. The distance between the step surface and the light-transmitting sealing layer 150 increases sequentially from the middle of the bottom plate 111 to both sides, that is, the closer the step surface is to the inner wall of the frame 112 in the X direction, the closer the distance between the step surface and the light-transmitting sealing layer 150 is. In this way, the distance between each of the plurality of light-emitting chips 120 disposed on the stepped surface and the light-transmitting sealing layer 150 and the distance between the corresponding light-emitting chip 120 and the corresponding reflective slope of the frame 112 can be as follows: Inversely proportional, that is, the closer the light-emitting chip 120 to the corresponding reflective slope of the frame 112 can be, the farther it is from the light-transmitting sealing layer 150 .

In addition, the height difference between two adjacent step surfaces where the light-emitting chips 120 corresponding to the same reflective slope of the frame 112 is not less than the thickness of the light-emitting chips 120, so that the light outlets of the two adjacent rows of light-emitting chips 120 facing the same direction The laser light generated by a row of light-emitting chips 120 that is far from the reflective slope of the frame 112 is not blocked by a row of light-emitting chips 120 that is closer to the reflective slope of the frame 112, thereby ensuring that the laser light emitted by each row of light-emitting chips 120 can be incident. to the corresponding reflective slope of the frame 112 , and is emitted from the light-transmitting sealing layer 150 after being reflected by the reflective slope of the frame 112 .

It should be noted that only 8 stepped surfaces are shown in FIG. 14 , but the number of stepped surfaces of the bottom plate 111 in the embodiment of the present disclosure may be 3, 5, 10, etc., and the embodiment of the present disclosure does not make this limited.

In some embodiments, referring to FIG. 15 , multiple light-emitting chips 120 can be set on each step surface, and the light-emitting directions of the multiple light-emitting chips 120 set on the same step surface are the same, and they are all opposite to the same reflective slope of the frame 112. .

It should be noted that only five light-emitting chips 120 are shown on one step surface in FIG. 7 etc., which are not limited in the embodiments of the present disclosure.

In some embodiments, the plurality of light emitting chips 120 can be disposed on the corresponding step surface of the bottom plate 111 by pasting or welding. As shown by the stepped surface A1 in FIG. 15 , the entire bottom surface of the light-emitting chip 120 is pasted or soldered to the stepped surface of the bottom plate 111 . In this case, the contact area between the light emitting chip 120 and the bottom plate 111 is maximized, which can increase the stability of the light emitting chip 120 . Of course, as shown in the step surface A2 in FIG. 15 , the bottom surface of the light-emitting chip 120 away from the light outlet can also be glued or welded to the step surface of the bottom plate 111. In this case, since the part of the bottom surface of the light-emitting chip 120 does not Contact with any object can dissipate the heat generated by the light-emitting chip 120 when it emits light, and improve the heat dissipation speed of the light-emitting chip 120 .

It can be understood that, when the laser 100 includes a heat sink 130 , each light emitting chip 120 is connected to a stepped surface of the bottom plate 111 through a corresponding heat sink 130 . In addition, the arrangement of the light-emitting chip 120 on the heat sink 130 and the arrangement of the heat sink 130 on the stepped surface of the bottom plate 111 can refer to the above-mentioned arrangement of the light-emitting chip 120 on the heat sink 130 and the arrangement of the heat sink 130 on the bottom plate 111. The setting method will not be described in detail in this embodiment of the present disclosure.

In other embodiments, referring to FIG. 17 , the laser 100 further includes a plurality of substrates 170 , and the plurality of substrates 170 are disposed on the base plate 111 and located in the accommodation space surrounded by the base plate 111 and the frame 112 . The heights of the plurality of substrates 170 are different, and each substrate 170 is provided with a plurality of light-emitting chips 120 on the surface away from the bottom plate 111. The light-emitting chips 120 on the same substrate 170 are arranged in parallel, and the light outlets of the light-emitting chips 120 are all connected to the frame. 112 is opposite to the same reflective slope.

Wherein, the height of the substrate 170 refers to the height of the substrate 170 in a direction perpendicular to the bottom plate 111 . Only 6 substrates are shown in FIG. 17 , but the number of substrates 170 in the laser 100 of the embodiment of the present disclosure is not limited to 6, and can be 3, 4 or 8, which is not limited in the embodiment of the present disclosure.

It should be noted that the size of the surface of each substrate 170 for disposing the light-emitting chip 120 in the X direction is not smaller than the size of the light-emitting chip 120 in the light-emitting direction. In addition, the plurality of substrates 170 are arranged from the middle of the bottom plate 111 to both sides in descending order of height, that is, the closer the substrate 170 to the reflective slope of the frame 112 is, the farther the distance from the light-transmitting sealing layer 150 is. . In this way, the distance between each light-emitting chip 120 of the plurality of light-emitting chips 120 disposed on the substrate 170 and the light-transmitting sealing layer 150 is inversely proportional to the distance between the corresponding light-emitting chip 120 and the corresponding inner wall of the frame 112, that is, In other words, the closer the light-emitting chip 120 is to the reflective slope corresponding to the frame 112 , the farther it is from the light-transmitting sealing layer 150 .

In addition, the height difference between two adjacent substrates 170 where the light-emitting chips 120 corresponding to the same reflective slope of the frame 112 are located is not less than the thickness of the light-emitting chips 120, so that the light outlets of the two adjacent columns of light-emitting chips facing the same direction In 120, the laser light generated by a row of light-emitting chips 120 that is far away from the reflective slope of the frame 112 is not blocked by a row of light-emitting chips 120 that is relatively close to the reflective slope of the frame 112, thereby ensuring that the laser light emitted by each row of light-emitting chips 120 is uniform. It can be incident on the corresponding reflective slope of the frame 112 , and be emitted from the light-transmitting sealing layer 150 after being reflected by the reflective slope of the frame 112 .

Referring to FIG. 18 , each of the plurality of substrates 170 can be a cuboid, and the substrate 170 is pasted or welded on the bottom plate 111 , and the surface of the substrate 170 away from the bottom plate 111 is provided with a light emitting chip 120 . It should be noted that the material of the substrate 170 can be copper, such as oxygen-free copper, and the arrangement of the light-emitting chip 120 on the substrate 170 can refer to the above-mentioned arrangement of the light-emitting chip 120 on the stepped surface of the bottom plate 111. This will not be repeated here.

It can be understood that, when the laser 100 includes a heat sink 130 , each light emitting chip 120 is connected to a surface of one substrate 170 of the plurality of substrates 170 away from the bottom plate 111 through a corresponding heat sink 130 . The arrangement of the light-emitting chip 120 on the heat sink 130 and the arrangement of the heat sink 130 on the substrate 170 can refer to the above-mentioned arrangement of the light-emitting chip 120 on the heat sink 130 and the arrangement of the heat sink 130 on the bottom plate 111. This disclosure The embodiment will not be repeated here.

It can be seen from the above description that the light-emitting chips 120 are arranged on the stepped surface of the bottom plate 111 or on the substrate 170, and a row of light-emitting chips 120 are arranged on a stepped surface or a substrate 170, so that the light-emitting chips 120 are located on the bottom plate 111, the frame 112 and the light-transmitting seal. A plurality of light-emitting chips 120 in the closed space surrounded by the layer 150 are arranged in multiple rows. The distances between each light-emitting chip 120 in the same column and the corresponding reflective slope of the frame 112 are equal, and in two adjacent columns of light-emitting chips 120 corresponding to the same reflective slope of the frame 112, any two light-emitting chips 120 and the light-transmitting slope The difference in the distance between the sealing layers 150 is not less than the thickness of the light emitting chip 120 . That is, among two adjacent columns of light-emitting chips 120 corresponding to the same reflective slope of the frame 112, the height of the row of light-emitting chips 120 farther from the reflective slope of the frame 112 in the Z-axis direction is higher than that of the frame 112. The height of the nearer row of light-emitting chips 120 is such that the laser emitted by the row of light-emitting chips 120 farther from the reflective slope of the frame 112 will not be blocked by the row of light-emitting chips 120 closer to the reflective slope of the frame 112, thereby ensuring The laser light emitted by the light-emitting chips 120 in each column can be incident on the corresponding reflective slope of the frame 112 , and emitted from the light-transmitting sealing layer 150 after being reflected by the reflective slope of the frame 112 .

Since the reflective prism 140 is usually made of optical glass, and the bottom plate 111 is usually made of metal, when the reflective prism 140 is pasted on the bottom plate 111, it is necessary to plate the bottom surface of the reflective prism 140 with gold, and then attach the gold-plated surface to the bottom plate 111. In order to ensure the shear force between the reflective prism 140 and the base plate 111, it is necessary to ensure the contact size between the reflective prism 140 and the base plate 111, which requires increasing the size of the reflective prism 140, resulting in an increase in the gold-plated area, and it is also necessary to ensure uniform gold plating The difficulty and cost of the process are greatly increased.

For this, as shown in FIG. 19 , the laser 100 includes a plurality of reflective sheets 300 corresponding to the plurality of light emitting chips 120 and a plurality of support parts 400 corresponding to the plurality of reflective sheets 300 . A plurality of reflectors 300 are located inside the casing 110 , and one reflector 300 corresponds to at least one light emitting chip 120 . The reflective mirror 300 is located on the light-emitting side of the corresponding light-emitting chip 120 , and is used to receive the laser light emitted by the corresponding light-emitting chip 120 and reflect the laser light in a direction away from the base plate 111 .

Usually, the included angle between the reflecting mirror 300 and the light emitting direction of the light emitting chip 120 may be 45°. In the laser 100 provided by the embodiment of the present disclosure, the laser beam emitted by the light-emitting chip 120 is reflected by the reflective mirror 300 , and the light output position can be adjusted by adjusting the reflective mirror 300 , so as to achieve higher precision.

A plurality of supporting parts 400 are fixed on the base plate 111 , and one supporting part 400 corresponds to at least one reflector 300 . The reflective lens 300 leans against the corresponding supporting portion 400 at a predetermined angle, and the parts of the reflective lens 300 in contact with the corresponding supporting portion 400 are adhered to each other.

In the laser 100 provided in some embodiments of the present disclosure, the support part 400 and the reflector 300 are used to replace the reflective prism 140. Since the support part 400 can be made of metal material, for example, it can be made of the same material as the tube shell 110, then in When the support part 400 is fixed to the bottom plate 111 of the tube case, it is no longer necessary to plate gold on the bottom surface of the support part 400, thereby greatly reducing the production cost.

Secondly, the support part 400 and the reflector 300 adopt a split structure, so the relative positional relationship between the support part 400 and the reflector 300 can be adjusted flexibly, and it is beneficial to reduce the size of the support part 400, so that the light-emitting chip 120 and its corresponding support The space occupied by the part 400 and the reflective mirror 300 is reduced, which in turn can reduce the package size of the light-emitting chip 120 and realize a smaller light spot arrangement, so that the package of the laser 100 can achieve small volume and low cost.

In addition, when the reflective mirror 300 leans against the supporting part 400, the inclination angle of the reflective mirror 300 can be flexibly controlled. Since the light-emitting chip 120 may have problems such as identification and mounting tolerances during mounting, the angle may be tilted. Compensation is achieved by adjusting the inclination angle of the reflecting mirror 300 .

In some embodiments, as shown in FIG. 20 , the surface of the support portion 400 facing the reflective sheet 300 includes a slope S1 , and the reflective sheet 300 is bonded to the slope S1 through an adhesive layer 500 . At the same time, the surface of the reflection sheet 300 close to the base plate 111 is pasted to the base plate 111 through the adhesive layer 500 .

Only part of the surface of the support part 400 is in contact with the reflector 300, so the surface in contact with the reflector 300 is set as a slope S1, and the slope S1 can be set according to the inclination angle of the reflector 300, so that the support 400 and the reflector 300 Can fit perfectly between them.

In order to increase the fixing strength of the reflective lens 300 , an adhesive layer 500 is used to paste the reflective lens 300 and the supporting part 400 . Due to the limited contact area between the reflective lens 300 and the support portion 400, in the embodiment of the present disclosure, an adhesive layer 500 is used to paste the reflective lens 300 and the bottom plate 111 to enhance the fixing strength of the reflective lens 300.

As shown in Figure 20, in order to facilitate heat dissipation, the adhesive layer 500 between the light-emitting chip 120 and the base plate 111 can use silver glue, the main component of the silver glue is silver, so it is more beneficial for the light-emitting chip 120 to use metal materials as the adhesive. heat dissipation.

In the process of encapsulating the laser 100 , the adhesive layer 500 used for pasting the components in the laser 100 can be silver glue. Because the reflective lens 300 is usually made of optical glass, the glass surface cannot be directly bonded to the metal surface through silver glue, and the glass surface needs to be plated with gold to ensure good bonding strength. Therefore, in some disclosed embodiments, the contact surface of the reflector 300 and the support portion 400 and the surface of the reflector 300 facing the bottom plate 111 are all provided with a gold-plated layer G, and then the gold-plated layer G is passed through the silver glue and the support portion 400 made of metal. Or base plate 111 is pasted.

In the laser provided by some embodiments of the present disclosure, only a partial area of the reflector 300 needs to be plated with gold, which greatly reduces the gold-plated area, thereby reducing the manufacturing difficulty of the reflector 300 and reducing the production cost.

In some embodiments, as shown in FIG. 20 , the base plate 111 and the supporting part 400 can be manufactured separately, that is, they are independent, and then the supporting part 400 is pasted on the base plate 111 . Since the adhesive layer 500 is made of silver glue, the supporting part 400 can be made of metal materials, for example, it can be made of metal copper and other materials, which is not limited here. The supporting part 400 made of metal can be directly attached to the bottom plate 111 through silver glue.

In some other embodiments, as shown in FIG. 21 , the support part 400 can also be integrally formed with the bottom plate 111, and the support part 400 is a raised structure formed by the bottom plate 111 protruding toward the side where the ring frame 112 is located. The sticking step between the support part 400 and the bottom plate 111 is omitted, and the support part 400 is firmer, which can improve the stability of fixing the reflector 300 .

In some other embodiments, as shown in FIG. 22 , the surface of the support portion 400 facing the reflective lens 300 is an inclined surface S2 , and the reflective lens 300 is bonded to the inclined surface S2 through an adhesive layer 500 .

The surface of the support portion 400 facing the side of the reflector 300 is all set as an inclined surface S2, and the reflector 300 can directly lean against the inclined surface S2, which can increase the contact area between the support 400 and the reflector 300. The support of the reflecting mirror 300 is more stable.

Adhesive layer 500 is also used to paste between support portion 400 and reflective lens 300. Reflective lens 300 is provided with gold-plated layer G on at least part of the surface that coincides with inclined surface S2 of support portion 400, and then gold-plated layer G is passed through silver glue and supports. Part 400 is pasted.

Since the bonding strength between the support portion 400 and the reflective lens 300 can fully support the stability requirements of the reflective lens 300, it is only necessary to perform gold plating on at least part of the surface of the reflective lens 300 facing the inclined surface S2 of the support portion for pasting. Compared with the embodiment using reflective prisms, the gold-plated area is greatly reduced, thereby reducing the manufacturing difficulty of the reflective sheet 300 and reducing the production cost.

In some embodiments, as shown in FIG. 22 , the base plate 111 and the support part 400 can be manufactured separately, that is, they are independent, and then the support part 400 is pasted on the base plate 111 . Since the adhesive layer 500 is made of silver glue, the supporting part 400 can be made of metal material. For example, materials such as metal copper may be used for production, which is not limited herein. The supporting part 400 made of metal can be directly attached to the bottom plate 111 through silver glue.

In some other embodiments, as shown in FIG. 23 , the support part 400 can also be integrally formed with the bottom plate 111, and the support part 400 is a raised structure formed by the bottom plate 111 protruding toward the side where the ring frame 112 is located. The sticking step between the support part 400 and the bottom plate 111 is omitted, and the support part 400 is firmer, which can improve the stability of fixing the reflector 300 .

In some embodiments, as shown in FIG. 24 , a plurality of light emitting chips 120 are arranged in an array, one reflective sheet 300 corresponds to one light emitting chip 120 , and one support portion 400 corresponds to one reflective sheet 300 . The supporting part 400 and the reflective sheet 300 are attached to each other.

In some embodiments, the height of the supporting part 400 is 0.6mm-1.2mm, and the width is 0.2mm-0.4mm; the height of the reflector is 1.4mm-1.5mm, and the width is 0.1mm-0.2mm. The width of the reflective mirror 300 is set according to the size of the light spot emitted by the light emitting chip 120 , and the width of the reflective mirror 300 is sufficient to receive the light spot emitted by the corresponding light emitting chip 120 . The width of the supporting portion 400 is greater than that of the reflective lens 300 , and is used to provide stable support for the reflective lens 300 . In addition, the height of the support part 400 is smaller than that of the reflector 300 , and the support 400 is used to support and fix the reflector 300 , so the height of the support 400 can be reduced so that the reflector 300 rests on the support 400 .

In some other embodiments, as shown in FIG. 25 , the supporting portion 400 is a strip structure extending along the arrangement direction of a row of light-emitting chips 120; one reflective mirror 300 corresponds to one light-emitting chip 120, and one supporting portion 400 corresponds to a row of reflective mirrors 300. A row of light-emitting chips 120 with the same light emitting direction corresponds to a strip-shaped support portion 400 , and the support portion 400 and the reflective sheet 300 are pasted together.

In some embodiments, the height of the supporting part 400 is 0.6mm-1.2mm; the height of the reflector is 1.4mm-1.5mm, and the width is 0.1mm-0.2mm. The width of the reflective mirror 300 is set according to the size of the light spot emitted by the light emitting chip 120 , and the width of the reflective mirror 300 is sufficient to receive the light spot emitted by the corresponding light emitting chip 120 . The support part 400 is directly formed into a strip shape, pasted with the bottom plate 111 or integrated with the bottom plate 111, which can increase the stability of the support part 400, and at the same time simplify the structure of the support part 400 and improve manufacturability. The height of the support part 400 is smaller than that of the reflector 300 , and the support 400 is used to support and fix the reflector 300 , so the height of the support 400 can be reduced so that the reflector 300 rests on the support 400 .

In some other embodiments, as shown in FIG. 26 , both the support portion 400 and the reflector 300 are strip structures extending along the arrangement direction of a row of light-emitting chips 120; one reflector 300 corresponds to a row of light-emitting chips 120, and one support The portion 400 corresponds to one reflective mirror 300 . A row of light-emitting chips 120 with the same light emitting direction corresponds to a strip-shaped support portion 400 and a strip-shaped reflective sheet 300 , and the reflective sheet 300 is attached to the support portion 400 .

In some embodiments, the height of the supporting part 400 is 0.6mm-1.2mm; the height of the reflector is 1.4mm-1.5mm. Both the reflective mirror 300 and the supporting portion 400 are arranged in a strip shape corresponding to a row of light emitting chips 120 , and the emitted light spots of the light emitting chips 120 will only be incident on the reflective mirror 300 located in the light emitting direction thereof. The support part 400 is directly formed into a strip shape, pasted with the bottom plate 111 or integrated with the bottom plate 111, which can increase the stability of the support part 400, and at the same time simplify the structure of the support part 400 and improve manufacturability. The height of the support part 400 is smaller than that of the reflector 300 , and the support 400 is used to support and fix the reflector 300 , so the height of the support 400 can be reduced so that the reflector 300 rests on the support 400 . Setting the reflective lens 300 in a strip shape can simplify the design and alignment steps. When the reflective lens 300 is set in a strip shape, it only needs to be partially gold-plated and pasted with silver glue on the support part 400, and the entire surface does not need to be gold-plated. Further reduce costs.

As shown in FIG. 27 , when the reflective mirror 300 is arranged in a strip shape, gold plating can be performed on both ends of the strip reflective mirror 300 to form a gold-plated layer G, and then pasted to the strip-shaped support portion 400 by silver glue. Therefore, the area of the gold-plated layer is reduced, thereby reducing the manufacturing difficulty of the reflecting mirror 300 and reducing the cost.

In the laser 100 provided by some embodiments of the present disclosure, when the reflective lens 300 is mounted, the suction nozzle can be used to move the position of the reflective lens 300, and at the same time, a charge coupled device (Charge Coupled Device, referred to as CCD) can be used for identification. To align the position of the reflector 300 and control the angle of the reflector 300 .

The above is only a specific embodiment of the present disclosure, but the scope of protection of the present disclosure is not limited thereto. Anyone familiar with the technical field who thinks of changes or substitutions within the technical scope of the present disclosure should cover all within the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be determined by the protection scope of the claims.

Claims

A laser comprising:

floor;

a frame located on the base plate;

a plurality of light-emitting chips, located on the base plate and surrounded by the frame, configured to emit laser light;

The first conductive layer is arranged at a position where the bottom plate corresponds to the frame, is connected to the light-emitting chip, and is configured to transmit current to the light-emitting chip.
The laser according to claim 1, further comprising a boss;

The boss is arranged on the bottom plate and surrounded by the frame, the side of the boss is fixed to the inner wall of the frame, and the plurality of light-emitting chips are arranged on the boss.
The laser according to claim 2, wherein the height of the boss is 300-500 microns, and/or the thickness of the frame is 2 mm-3 mm.
The laser according to claim 1, wherein the base plate further comprises a groove;

The frame is arranged in the groove, and the groove wall of the groove is fixed to the outer wall of the frame, and the plurality of light-emitting chips are arranged in the groove.
The laser according to claim 4, wherein the depth of the groove is 300-500 microns, and/or the thickness of the frame is 1 mm-2 mm.
The laser according to claim 1, further comprising:

steps are provided on the inner wall of the frame;

a second conductive layer disposed on the surface of the step away from the bottom plate;

a conductive part, arranged in the frame, one end of which is connected to the first conductive layer, and the other end is connected to the second conductive layer;

The light emitting chip is connected to the second conductive layer, and connected to the first conductive layer through the conductive part.
The laser according to claim 1, wherein the material of the frame comprises ceramics.
The laser according to claim 1, wherein the inner wall of the frame opposite to the light outlets of the plurality of light-emitting chips is set as a reflective slope, and the reflective slope is configured to transmit the laser light emitted by the plurality of light-emitting chips Reflected in a direction away from the base plate.
The laser according to claim 8, wherein the included angle between the reflective slope and the plane where the bottom plate is located is 45 degrees.
The laser according to claim 8, further comprising a light-transmitting sealing layer;

The light-transmitting sealing layer is arranged on the surface of the frame away from the bottom plate, and is configured to seal the accommodating space formed by the frame and the bottom plate;

The distance between the light-emitting chip and the light-transmitting sealing layer is inversely proportional to the distance between the light-emitting chip and the corresponding inner wall of the frame.
The laser according to claim 10, wherein the plurality of light-emitting chips are arranged in multiple rows;

In the same row of light-emitting chips, the distance between each light-emitting chip and the corresponding inner wall of the frame is equal;

In two adjacent rows of light-emitting chips corresponding to the same inner wall of the frame, the difference in distance between any two light-emitting chips and the light-transmitting sealing layer is not less than the thickness of the light-emitting chip.
The laser according to claim 10, wherein the bottom plate includes a plurality of stepped surfaces, and the distance between the plurality of stepped surfaces and the light-transmitting sealing layer increases from the middle of the bottom plate to both sides, so The plurality of light-emitting chips are arranged on the plurality of stepped surfaces.
The laser of claim 10, further comprising a plurality of substrates;

The plurality of substrates are arranged on the bottom plate, the heights of the plurality of substrates decrease from the middle of the bottom plate to both sides, and the plurality of light-emitting chips are arranged on the plurality of substrates.
The laser according to claim 1, comprising:

A plurality of reflective mirrors are arranged on the bottom plate; each reflective mirror corresponds to at least one light-emitting chip, and is located on the light-emitting side of the at least one light-emitting chip, and is configured to direct the laser light emitted by the at least one light-emitting chip away from the directional reflections from the base plate; and

A plurality of support parts, fixed on the base plate; each support part corresponds to at least one reflective mirror, the at least one reflective mirror leans against the corresponding support part, and the at least one reflective mirror is in contact with the corresponding support part parts are pasted together.
The laser according to claim 14, wherein the included angle between the reflecting mirror and the light-emitting direction of the light-emitting chip is 45 degrees.
The laser device according to claim 14, wherein the part of the surface of the supporting part facing the corresponding reflector is set as a slope, and the reflector is attached to the slope through an adhesive layer;

The surface of the reflecting mirror close to the bottom plate is pasted to the bottom plate through an adhesive layer.
The laser device according to claim 14, wherein the surface of the supporting portion facing the corresponding reflector is provided as a slope, and the reflector is attached to the slope through an adhesive layer.
The laser according to claim 14, wherein the support portion is a protrusion formed by protruding from the bottom plate toward the side where the frame is located.
The laser of claim 1, further comprising a plurality of heat sinks;

The plurality of heat sinks are arranged on the base plate, and the plurality of light-emitting chips are arranged on corresponding heat sinks.
A laser projection device, comprising: a light source, an optical machine and a lens;

The light source comprises a laser as claimed in claim 1, configured to emit an illumination beam to the light machine;

The light machine is configured to modulate the illumination beam emitted by the light source to obtain a projection beam;

The lens is configured to image the projection beam.