JP4204581B2 - Semiconductor laser device - Google Patents

Description

  The present invention relates to a semiconductor laser device that can be used as a light source for an optical disc such as a CD, CD-R / RW, DVD, DVD-R / RW, DVD-Blu-ray disc. In particular, the present invention relates to a semiconductor laser device including a small package suitable for slim (thin) pickup for an optical disc, or a package thereof.

  In the current half-high topic up, a semiconductor laser device having a φ5.6 mm stem is used. For the slim pickup, a D-type stem with a part of φ5.6mm stem cut, and an I-type stem package with both cuts are proposed. Further, packages of φ3.5 mm stem and φ3.3 mm stem have been proposed (see the appearance shown in FIG. 13). The φ3.5 mm stem and the φ3.3 mm stem have a problem that the heat sink portion for arranging the laser elements becomes small because the φ5.6 mm stem package is entirely reduced as shown in FIG. . Japanese Patent Application Laid-Open No. H10-228561 is known for increasing the volume of the heat sink, but it is semicircular and insufficient in volume.

In the case of a high-power type semiconductor laser device for CD-R, DVD-R, etc., both the current value and the voltage increase, and accordingly heat generation increases, and a stem with a small heat dissipation volume such as φ3.3 mm stem is 70 ° C. or more. There was a problem that it was difficult to guarantee high temperature. Therefore, how to gain the heat radiation volume becomes important.
Japanese Patent Laid-Open No. 10-362032

  The subject of the present invention is one of the following, or a combination thereof. That is, improve heat dissipation. To reduce the size of the package. To protect the element. Reduce the number of lead pins.

According to a first aspect of the present invention, there is provided a semiconductor laser device having a semiconductor laser element, a lead pin connected to the semiconductor laser element, an arcuate curved surface at an outer peripheral portion, and the same optical axis as the semiconductor laser element. A heat sink made of metal having a groove extending upward in the direction, and the groove includes two pieces including the semiconductor laser element and one end of the lead pin, and including the lead pin in the width direction of the groove has a width and depth which lead pins are arranged, the heat sink portion has a bottom surface parallel to the flat surface of the groove to the bottom surface, the bottom surface of the heat sink portion, the flat area is wider than the bottom surface of the groove It is characterized by having a surface.

According to a second aspect of the present invention, two wire bond lines connected to the semiconductor laser element are arranged in the groove so as not to protrude from the groove.

According to the present invention, the heat sink portion can be stably supported during wire bonding work to the semiconductor laser element or the like, even though the heat sink portion has an arcuate curved surface on the outer peripheral portion. In another aspect, the package can be reduced in size and heat dissipation can be improved . In another aspect, the element can be protected.

  Embodiments of the present invention will be described below with reference to the drawings.

  1A and 1B show a first embodiment of an improved semiconductor laser device, in which FIG. 1A is a perspective view, FIG. 1B is a front view, and FIG. 1C is a plan view.

  The semiconductor laser device 1 includes a stem type package 2. The package 2 includes a base portion 3 and a heat sink portion 4.

  The base part 3 is made of a disk-shaped metal whose basic form is a disk having a diameter of 3.3 mm and a thickness of 1 mm. The heat sink portion 4 is formed of a columnar metal having a hollow with a diameter of 2.9 mm and a length of 2.5 mm as a basic form, and a part of which is cut out to form a recess. The base portion 3 and the heat sink portion 4 are arranged concentrically so that their centers coincide with each other when viewed from the front. The center X of the base part 3 and the heat sink part 4 is set so as to coincide with the optical axis X of the semiconductor element described later.

  The heat sink portion 4 has a front U shape by forming a groove 5 extending in the central axis direction of the cylinder so as to cross the upper flat surface and the lower flat surface of the cylinder. The groove 5 has an upper end width of 1.5 mm and a lower end width of 1.0 mm. In the groove 5, the circular arc portion of the cylinder cut by the groove 5 (the circular arc portion where the upper end of the groove 5 is regarded as a chord) becomes an angle θ smaller than 180 degrees in terms of the central angle with respect to the central axis of the cylinder. It is formed as follows. This angle θ is set to an angle smaller than 90 degrees, but may be set to an angle larger than 90 degrees as long as it is 180 degrees or less. The groove 5 is formed so that the bottom surface thereof is deeper than the central axis X of the cylinder. A surface 6 positioned at the bottom of the groove 5 is a flat surface parallel to the central axis X of the cylinder, and this flat surface 6 is a surface on which a semiconductor laser element to be described later is disposed.

  The heat sink portion 4 is integrally provided with wall portions 7 on both sides of the flat surface 6 (side in the left-right direction with respect to the axis X). That is, the left and right walls 7 </ b> A and 7 </ b> B higher than the flat surface 6 at the bottom of the groove 5 are provided on the left and right of the groove 5. An element 9 described later is disposed between the wall portions 7A and 7B.

  The base end of the heat sink part 4 is integrated with the base part 3. The base part 3 and the heat sink part 4 may be formed as separate members, and the package 2 may be formed by integrally joining the base part 3 and the heat sink part 4 together with a connecting material such as solder. You can also. When the base part 3 and the heat sink part 4 are respectively separate members, the base part 3 is preferably made of copper or a copper-based alloy having a low thermal resistance, or iron or an iron-based alloy. It is preferable that the heat resistance is made of copper or a copper-based alloy. When the base portion 3 and the heat sink portion 4 are integrally formed, the base portion 3 and the heat sink portion 4 are preferably made of copper or a copper-based alloy having a low thermal resistance. When the base portion 3 and the heat sink portion 4 are integrally formed, they can be formed simultaneously by pressing a plate material or by cutting a column material.

  The heat sink portion 4 has a tapered surface 8 formed on the outer peripheral portion of the tip portion so that the tip thereof is tapered. By forming such a tapered surface 8, it is possible to prevent the receiving portion of the laser device on the optical pickup side, which is usually made of aluminum, from being scraped by the edge.

  Further, since the outer peripheral portion of the heat sink portion 4 is a curved surface formed of an arc centering on the axis X including the left and right wall portions 7A and 7B, the axis X is centered in the receiving portion of the laser device on the optical pickup side. When the position is adjusted by rotating it, the movement at the time of adjustment can be made smooth by using the outer peripheral curved surface as a guide.

  In the semiconductor laser device 1, a semiconductor laser element 9 as a semiconductor element is disposed in the package unit 2. The semiconductor laser element 9 is arranged on the mounting surface of the heat sink portion 4, in this example, the flat surface 6 constituting the inner wall surface of the groove 5 via the submount 10. The semiconductor laser element 9 is preferably arranged in such a manner that its light emitting point is biased toward the submount 10, that is, in a junction-down form, in order to improve heat dissipation.

  The semiconductor laser device 1 can use various semiconductor laser elements 9 from infrared type to ultraviolet type. In particular, it is preferable to use a red or blue type semiconductor laser element that has a poor heat dissipation characteristic as compared with the infrared type and requires a good heat dissipation environment, because the heat dissipation characteristic can be improved.

  The submount 10 is composed of a member with good heat dissipation, and for example, a semiconductor material such as silicon or aluminum nitride can be used. When the heat dissipation of the semiconductor laser element 9 is further increased, the semiconductor laser element 9 can be directly attached to the attachment surface of the heat sink portion 4 without the submount 10 interposed.

  Since the semiconductor laser element 9 is disposed in the groove 5 and is sandwiched between the walls 7A and 7B that are sufficiently higher than the height of the semiconductor laser element 9, the wall functions as a protection function for the element. .

  The semiconductor laser device 1 includes a plurality of lead pins 11A and 11B fixed to the package 2. In this embodiment, the two lead pins 11A and 11B are arranged so as to sandwich the center X of the base portion 3. One lead pin 11 </ b> A is fixed in a state where one end thereof is joined to the base portion 3 by welding or the like and is electrically connected to the base portion 3. One end of the other lead pin 11 </ b> B is inserted into the through hole 12 of the base portion 3, and is fixed while being insulated from the base portion 3 by the insulating material 13 disposed in the through hole 12. One end of the lead pin 11B passes through the base portion 3 and is positioned in the groove 5.

  One lead pin 11A is connected to one electrode of the semiconductor laser element 9 through the base portion 3, the heat sink portion 4, the wire bond line 14, and the like. The other lead pin 11B is connected to the other electrode of the semiconductor laser element 9 via a wire bond line 15 connected to one end thereof, a wiring on the submount 10, and the like. When a voltage necessary for driving the semiconductor laser element 9 is applied between the lead pins 11A and 11B, the semiconductor laser element 9 operates and a laser beam is output in the axis X direction.

  The wire bond lines 14 and 15 are preferably arranged in the groove 5 so as not to protrude from the upper edge of the groove 5 in order to receive protection by the side walls 7A and 7B. That is, the groove 5 is formed in a shape that completely accommodates the semiconductor laser element 9, the submount 10, and the wire bond lines 14 and 15.

  The semiconductor laser device 1 is provided with a pair of triangular cutouts 16A and 16B for positioning and a square cutout 17 for indicating the direction in the base portion 3 as in the prior art.

  The semiconductor laser device 1 is in a completed state shown in FIG. 1, and is used as a light source in an optical pickup device or the like. At this time, since the tip of the heat sink portion 4 is the tapered surface 8, the laser device 1 can be smoothly inserted into the mounting location. Further, by forming the tapered surface 8 at the tip, it is possible to prevent the receiving portion of the laser device on the optical pickup side, which is usually made of aluminum, from being scraped by the edge. Therefore, it is possible to prevent the adverse effect of the metal powder generated by being scraped by the edge on the optical system. When used by being incorporated in an optical pickup device or the like, the flat surface on the heat sink portion 4 side of the base portion 3 functions as a reference surface for positioning.

In the embodiment shown in FIG. 1, the volume of the heat sink member 4 is 11.1 mm ^3, could be increased to approximately 10 times the 1.1 mm ³ prior type (.phi.3.5 mm) shown in FIG. 10. The total volume of the package 2 (the total volume of the base portion 3 and the heat sink portion 4) was 20.7 mm ³ and could be increased to about twice that of the conventional type 10.7 mm ³ shown in FIG. The volume ratio of the heat sink portion 4 to the total volume of the package 2 is about 53% (11.1 / 20.7), which is about 10% (1.1 / 10.7) of the conventional type shown in FIG. The increase was about 5 times. Therefore, the heat generated from the semiconductor laser element 9 can be effectively radiated.

  FIG. 12 shows the results of a reliability test when a 100 mW pulse test is performed in a 70-degree C. environment in a DVD-R semiconductor laser device having a red semiconductor laser element. The horizontal axis represents time, and the vertical axis represents the operating current under APC (auto power control). As is apparent from this figure, the device is inoperable after about 100 hours in the conventional structure shown in FIG. 13, whereas in the first embodiment, it is confirmed that it operates stably for over 500 hours. did it.

  In the above embodiment, since the conventional airtight structure using the cap is not employed, the number of parts and the number of assembling steps can be reduced. Moreover, the area which the heat sink part 4 contacts with external air can also be increased.

  In addition to the structure shown in FIG. 1, a semiconductor laser device can be configured by attaching a cap with a window in a sealed state as in the prior art.

  Since the semiconductor laser device 1 shown in FIG. 1 does not include a light receiving element, in order to monitor the output of the semiconductor laser element 9, a light receiving element for front monitoring may be arranged separately from the laser device 1. preferable.

  Next, a second embodiment of the improved semiconductor laser device will be described with reference to FIG. The same components as those in the embodiment shown in FIG. 1 are denoted by the same reference numerals, the description thereof will be omitted, and differences will be mainly described. The main difference from the first embodiment is that a submount 10 having a built-in light receiving element 18 is used, and that the number of lead pins is increased to 3 to extract the output. is there.

  The base portion 3 is formed with one laterally long through-hole 12 that is large enough to pass through the two lead pins 11B and 11C. Two lead pins 11 </ b> B and 11 </ b> C are arranged in the hole 12 so as to be spaced apart from each other so that one end thereof is located in the groove 5. The two lead pins 11B and 11C are insulated from each other by an insulating material 13, and are also insulated and fixed to the base portion 3. One end of the lead pin 11B is used for wiring to the semiconductor laser element 9 as in the previous embodiment, and the other lead pin 11C is used for wiring to the light receiving element 18 incorporated in the submount 10. The light receiving element 18 is a PIN type light receiving element having a two-terminal structure, and an electrode (in this example, a back electrode) connected to one terminal is electrically connected to the heat sink portion 4 and the other electrode (in this example) Front electrode) is connected to the lead pin 11C through a wire bond line 19.

  Also in the second embodiment, the same operational effects as in the first embodiment can be achieved. Further, even in the semiconductor laser device with a built-in light receiving element, the tips of the lead pins 11B and 11C penetrating the base portion 3 can be arranged in the groove 5, and wire bonding wiring can be performed in the groove 5. Wiring to the light receiving element 18 can be reliably protected by the heat sink portion 4. Further, the package 2 can be reduced in size.

  Next, a third embodiment of the improved semiconductor laser device will be described with reference to FIG. The same components as those in the embodiment shown in FIG. 1 are denoted by the same reference numerals, the description thereof is omitted, and differences will be mainly described. A significant difference from the first embodiment is that the tip of the heat sink portion 4 is changed from a tapered surface 8 to a hemispherical curved surface 20. The semiconductor laser element 9 and the submount 10 are arranged so as not to protrude forward from the curved surface 20. By forming the curved surface 20 in this way, the tip of the semiconductor laser device 1 has the same form as the tip of the ballpoint pen, and tilt adjustment when incorporated in a pickup device or the like is facilitated. That is, the tip of the laser device is arranged in a hemispherical depression of the pickup device, and adjustment is performed while moving the lead pin in the X and Y directions so that the optical axis is at the optimum position, facilitating adjustment called tilt adjustment. be able to.

  In the third embodiment, the position of the semiconductor laser element 9 can be changed from the state shown in FIG. 3 to a state where it is slightly moved back and forth (for example, on the base part 3 side) along the axis X direction. For example, the semiconductor laser element 9 can be arranged so that its light emission point is equidistant from the curved surface 20. That is, when the curved surface 20 is regarded as a part of one sphere, the semiconductor laser element 9 is arranged so that the light emission point of the semiconductor laser element 9 is located at the center of the sphere. By arranging in this way, the light emission point of the semiconductor laser element 9 does not move during the tilt adjustment. As a result, adjustment work becomes easy.

  This third embodiment can be applied to the second embodiment and other embodiments described later.

  Next, a fourth embodiment (embodiment of the present invention) of an improved semiconductor laser device will be described with reference to FIG. The same components as those in the embodiment shown in FIG. 1 are denoted by the same reference numerals, the description thereof will be omitted, and differences will be mainly described. A significant difference from the first embodiment is that the shape of the heat sink portion 4 is changed. The first change is that a tapered surface 21 inclined downward is formed at the tip of the flat surface 6 of the groove 5. By forming such a tapered surface 21, it is possible to prevent light output from the semiconductor laser element 9 from being blocked by the flat surface 6 of the groove 5. The angle of the taper surface 21 is set to an angle larger than half of the vertical spread angle of the light of the semiconductor laser element 9. Since the light spreading angle of the semiconductor laser element 9 in the vertical direction is usually about 30 degrees, the inclination angle of the tapered surface 21 can be set to 15 degrees or more, for example, an angle in the range of 15 degrees to 20 degrees. Is done.

  When the length of the heat sink portion 4 is increased while keeping the position of the element 9 the same, the length of the heat sink portion 4 can be easily set longer by forming the tapered surface 21 in front of the element. Become. Therefore, the volume of the heat sink part 4 can be increased and the heat radiation area can be increased.

  The second change point is that the bottom surface which is the arc surface of the heat sink portion 5 is changed to a flat bottom surface 22. The bottom surface 22 is a flat surface parallel to the flat surface 6 of the groove 5 and has a larger area than the flat surface 6. By adopting such a flat bottom surface 22, the package 2 can be stably supported at the time of wire bonding work to the semiconductor laser element 9 or the like.

  The first and second changes may be performed separately or simultaneously.

  The fourth embodiment can be applied to the second and third embodiments and other embodiments described later.

  Next, a fifth embodiment of the improved semiconductor laser device will be described with reference to FIG. The same components as those in the embodiment shown in FIG. 1 are denoted by the same reference numerals, the description thereof will be omitted, and differences will be mainly described. The main difference from the first embodiment is that the shape of the heat sink portion 4 is changed and the optical element 23 is added to the tip of the heat sink portion 4.

  The first change is that the tapered surface 8 provided at the front end of the heat sink portion 4 is not formed, but remains in a cylindrical shape, that is, the front end surface and the rear end surface of the heat sink portion 4 are the same plane shape. This is the point. By setting the tip shape of the heat sink part 4 in this way, a large area of the tip surface 24 of the heat sink part 4 can be secured. Therefore, it is possible to widen the mounting allowance when adding the optical element 23 to the front end surface 24 of the heat sink portion 4.

  The second change is that an optical element 23 is added to the tip of the heat sink part 4. The optical element 23 has a flat plate shape, but it is sufficient that at least the surface on the heat sink portion 4 side has a flat shape. For example, a tapered surface corresponding to the tapered surface 8 may be formed on the surface of the optical element 23 opposite to the surface on the heat sink portion 4 side. As the optical element 23, one selected from a hologram element, a quarter wavelength plate, a polarizing plate, a plate lens, and the like can be used. Since the optical element 23 provided separately from the semiconductor laser device is integrally provided, optical adjustment in an optical pickup or a transmitter for optical communication can be simplified.

  The first and second changes described above may be performed separately or simultaneously.

  The fifth embodiment can be applied to the second and fourth embodiments and other embodiments described later.

  Next, a sixth embodiment of the improved semiconductor laser device will be described with reference to FIG. The same components as those in the embodiment shown in FIG. 2 are denoted by the same reference numerals, and the description thereof will be omitted. The major difference from the second embodiment is that the shape of the heat sink portion 4 is changed and the optical element 25 is added to the tip of the heat sink portion 4.

  The first change is that the tapered surface 8 provided outside the heat sink portion 4 is not formed on the outside of the heat sink portion 4 but remains in a cylindrical shape, and a recess for receiving the optical element 25 is provided at the tip of the groove 5. It is. By setting the tip shape of the heat sink portion 4 in this way, the spherical optical element 25 can be securely attached.

  The second change is that a spherical optical element 25 is added to the tip of the heat sink portion 4. The optical element 25 is used for collimating or condensing light emitted from the semiconductor laser element 9. The element 25 is held in a recess provided at the tip of the heat sink portion 4 and is fixed by an adhesive or the like. Since the optical element 25 provided separately from the semiconductor laser device is optically adjusted and integrally provided, the optical element 25 can be applied to an optical pickup, a transmitter for optical communication, an optical fiber module, or the like. Adjustment can be simplified.

  The first and second changes described above may be performed separately or simultaneously.

  The sixth embodiment can be applied to the first and fourth embodiments and other embodiments.

  Next, a seventh embodiment of the improved semiconductor laser device will be described with reference to FIG. The same components as those in the embodiment shown in FIG. 1 are denoted by the same reference numerals, the description thereof will be omitted, and differences will be mainly described. A significant difference from the first embodiment is that the arc-shaped side surface shape of the heat sink portion 4 is changed to a multi-surface shape. When viewed from the front, the outer peripheral portion of the heat sink portion 4 provided with the arc portion was changed to a polygonal shape when viewed from the front. By changing to a polygon, chucking can be easily performed. The bottom surface which was the circular arc surface of the heat sink portion 4 is a flat bottom surface 22 as in the fourth embodiment. The bottom surface 22 is a flat surface parallel to the flat surface 6 of the groove 5 and has a larger area than the flat surface 6. By adopting such a flat bottom surface 22, the package 2 can be stably supported at the time of wire bonding work to the semiconductor laser element 9 or the like.

  When the heat sink portion 4 is inserted into a cylindrical recess, a plurality of corner portions of the surrounding surface are virtual cylinders (indicated by a one-dot chain line C in FIG. 7) in order to increase the mounting stability. It is formed so as to be inscribed in. At this time, the central axis of the virtual cylinder C coincides with the axis X.

  The seventh embodiment can be applied to the second embodiment and other embodiments.

  Next, an eighth embodiment of the improved semiconductor laser device will be described with reference to FIG. The same components as those in the embodiment shown in FIG. 1 are denoted by the same reference numerals, the description thereof will be omitted, and differences will be mainly described. A significant difference from the first embodiment is that the shapes of the base portion 3 and the heat sink portion 4 are changed.

  The first change is the step used as the positioning reference surface formed by the difference in the external dimensions of the base portion 3 and the heat sink portion 4, that is, the outer periphery of the base portion 3 protruding from the periphery of the heat sink portion 4. This is the point where the part was lost. In this way, the base portion 3 and the heat sink portion 4 are formed into an integral columnar shape, and the step between them is eliminated, so that when the semiconductor laser device is moved and adjusted in the direction of the axis X, there is no restriction imposed by the step, Adjustment work becomes easy.

  A second change is that a part of the wall portion 7B of the heat sink portion 4 is removed and a flat surface 6B is provided in order to improve workability of wire bonding. The flat surface 6B is flush with the flat surface 6 of the groove 5, but may be a flat surface having a step with the bottom surface 5 of the groove 5. By forming such a flat surface 6B, the shape of the capillary for wire bonding to the element 9 or the submount 10 is less likely to be restricted, and the workability during manufacturing can be improved.

  The first and second changes may be performed separately or simultaneously.

  The eighth embodiment can be applied to any of the second to seventh embodiments and other embodiments.

  Next, a ninth embodiment of the improved semiconductor laser device will be described with reference to FIG. The same components as those in the embodiment shown in FIG. 1 are denoted by the same reference numerals, the description thereof will be omitted, and differences will be mainly described. The main difference from the first embodiment is that dummy lead pins 11D are provided to make them compatible with a general 3-pin device, and the left and right wall portions 7A and 7B formed on the left and right sides of the groove 5 are different. One of these is deleted, and the wall portion 7B is formed only on one of the left and right sides of the flat surface 6.

  The heat sink portion 4 has an L shape when viewed from the front by deleting one of the wall portions 7A and 7B. In the previous embodiment, the semiconductor laser element 9 is arranged on the flat surface 6 constituting the bottom surface of the groove 5. However, as in this embodiment, the shape of the groove 5 can be regarded as a fan shape (V-shape). In this case, it can be considered that the semiconductor laser element 9 is disposed on one inner wall surface of the groove 5.

  The lead pin 11 </ b> B is not completely accommodated in the groove 5, but is insulated and fixed to the base portion 3 with a part protruding from the groove 5. Similar to the lead pin 11A, the dummy lead pin 11D is bonded to the base portion 3 by welding or the like and fixed to the base portion 3 in an electrically conductive state. Similarly to the lead pin 11A, the lead pin 11D is disposed at a position where the lead pin 11D overlaps the heat sink portion 4 when viewed from the axis X direction. The lead pin 11D is disposed at the same position as the position where the monitor signal output lead pin is disposed in a general 3-pin device. Accordingly, the pin arrangement is compatible with a general 3-pin device, and it is possible to manufacture using a common manufacturing apparatus.

  In the monitor function built-in type device, it is necessary to arrange the lead pin for outputting the monitor signal so as to avoid the planar overlap with the heat sink part 4 like the lead pin 11B, so the installation location of the heat sink part 4 is limited. The However, in the case of this embodiment, since the lead pin 11D is a dummy lead that does not protrude from the base portion 3, a wide installation range of the heat sink portion 4 can be secured. In other words, the heat sink portion 4, in this example, the wall portion 7B, can be disposed so as to protrude within a range where the lead pin for outputting the monitor signal is located.

  As a result, the upper end position of the heat sink portion 4 which is normally at the same position as the surface 6 can be arranged so as to protrude to a position above the light emitting point or the upper surface of the semiconductor laser element 9. Thus, the presence of the wall portion 7B protruding to a position above the light emitting point or the upper surface can increase the volume or surface area for heat dissipation, and can improve heat dissipation.

  The ninth embodiment can be applied to any of the second to eighth embodiments and other embodiments.

  Next, a tenth embodiment of the improved semiconductor laser device will be described with reference to FIG. Components that are the same as those in the embodiment shown in FIG. 9 are denoted by the same reference numerals, description thereof is omitted, and differences will be mainly described. The difference from the ninth embodiment is that the shape of the wall portion 7 of the heat sink portion 4 is changed. That is, the top of the wall portion 7 that had an acute angle was chamfered to form a flat surface 7C. With such a configuration, although the heat dissipation is slightly inferior to that of the ninth embodiment, the same effects as those of the ninth embodiment can be achieved.

  Next, an eleventh embodiment of the improved semiconductor laser device will be described with reference to FIG. This embodiment is based on the embodiment shown in FIG. 8 and adds the embodiment shown in FIGS. Therefore, the same components as those in the embodiment shown in FIGS.

  The base portion 3 and the heat sink portion 4 have the same diameter so that no step is generated between them. A part of the cylindrical shape is cut out to be the heat sink portion 4, and the portion not cut out is the base portion 3. In this way, the base portion 3 and the heat sink portion 4 are formed into an integral columnar shape, and the step between them is eliminated, so that when the semiconductor laser device is moved and adjusted in the direction of the axis X, there is no restriction imposed by the step, Adjustment work becomes easy.

  One end of the lead pin 11B fixed to the base by an insulating material extends through the base portion 3 and above the flat surface 6B. Similarly to the lead pin 11A, the lead pin 11D is fixed in a state in which one end thereof is joined to the base portion 3 by welding or the like and is electrically connected to the base portion 3. Similarly to the lead pin 11A, the lead pin 11D is disposed at a position where the lead pin 11D overlaps the heat sink portion 4 when viewed from the axis X direction. The lead pin 11D is disposed at the same position as the position where the monitor signal output lead pin is disposed in a general 3-pin device. Accordingly, the pin arrangement is compatible with a general 3-pin device, and it is possible to manufacture using a common manufacturing apparatus. The wall portion 7 is chamfered at the top to form a flat surface 7C.

  According to the eleventh embodiment, the same effects as in the eighth to tenth embodiments can be achieved.

  In the embodiment described above, a light emitting diode can be used as a semiconductor light emitting element instead of the semiconductor laser element 9. Other than that, as long as the gist of the present invention is not changed, changes other than the above embodiment may be made.

  It can be used for a light source for optical discs such as CD, CD-R / RW, DVD, DVD-R / RW, DVD-Blu-ray disc.

1 shows a first embodiment of an improved semiconductor laser device, wherein (a) is a perspective view, (b) is a front view, and (c) is a plan view. The 2nd Embodiment of the improved semiconductor laser apparatus is shown, (a) is a perspective view, (b) is a front view, (c) is a top view. A third embodiment of the improved semiconductor laser device is shown, (a) is a perspective view, (b) is a front view, and (c) is a plan view. 4 shows a fourth embodiment of an improved semiconductor laser device, in which (a) is a partially cutaway side view and (b) is a front view. The 5th Embodiment of the improved semiconductor laser apparatus is shown, (a) is a top view, (b) is a front view. It is a top view which shows 6th Embodiment of the improved semiconductor laser apparatus. It is a front view which shows 7th Embodiment of the improved semiconductor laser apparatus. It is a perspective view which shows 8th Embodiment of the improved semiconductor laser apparatus. 9 shows a ninth embodiment of an improved semiconductor laser device, where (a) is a perspective view, (b) is a front view, and (c) is a plan view. The 10th Embodiment of the improved semiconductor laser apparatus is shown, (a) is a perspective view, (b) is a front view, (c) is a top view. An eleventh embodiment of an improved semiconductor laser device is shown, (a) is a perspective view, (b) is a front view, and (c) is a plan view. It is a characteristic view which shows the data of a reliability test. It is a partially cutaway perspective view showing a conventional example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor laser apparatus 2 Package 3 Base part 4 Heat sink part 5 Groove 9 Semiconductor laser element (semiconductor light emitting element)
11 Lead pin

Claims (2)

A semiconductor laser element, a lead pin connected to the semiconductor laser element, and a metal heat sink portion having an arc-shaped curved surface on the outer periphery and a groove extending upward in the same direction as the optical axis of the semiconductor laser element, The groove has a width and depth in which one end of the semiconductor laser element and the lead pin is disposed therein and two lead pins including the lead pin are arranged in the width direction of the groove . has a bottom surface parallel to the flat surface of the groove to the bottom surface, the bottom surface of the heat sink portion, a semiconductor laser device, characterized in that area than the bottom surface of the groove has a wide flat surface.   2. The semiconductor laser device according to claim 1, wherein two wire bond lines connected to the semiconductor laser element are arranged in the groove so as not to protrude from the groove.

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