JP2009124119A - Semiconductor laser device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser device which can suppress reduction in heat radiation, while aiming at suppression of size reduction, and improve high-speed response. <P>SOLUTION: The semiconductor laser device 1 includes a header 6; a submount 7 attached to the header 6; a semiconductor laser element portion 8 mounted on the submount 7; and a lead 3. In the semiconductor laser device 1, when the emission direction of a laser beam from a semiconductor laser element portion 8 is an arrow mark Z1 (front side), a first front end 3a of the lead 3 is arranged in the arrow mark Z2 direction (rear side) beyond a surface 7a on the side of the arrow mark Z2 (rear side) of the submount 7, and an electrode 7c electrically connected to the semiconductor laser element portion 8 of the submount 7 is connected to the front end 3a of the lead 3 by means of an Au wire 100. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a semiconductor laser device, and more particularly to a semiconductor laser device including a plurality of leads, heat sinks, and a semiconductor laser element portion that are electrically independent from each other.

  Conventionally, along with miniaturization and thinning of an optical pickup, a semiconductor laser device serving as a light source thereof is also required to be miniaturized. On the other hand, however, if the semiconductor laser device is downsized, the heat sink mounted on the semiconductor laser device is also downsized.

Therefore, conventionally, a semiconductor laser device has been proposed which suppresses the reduction in heat dissipation while reducing the size (for example, see Patent Document 1). Patent Document 1 discloses a semiconductor laser device that includes a laser chip (semiconductor laser element portion), a heat sink on which the laser chip is mounted, and three leads that are electrically independent from each other. In this semiconductor laser device, the rear end portion of the heat sink is disposed in front of the leading end portion of the lead when the laser light emission direction is the front. The heat sink is formed so as to extend in the upper direction on which the laser chip is mounted. This makes it possible to increase the heat sink without increasing the size of the semiconductor laser device. As a result, it is possible to reduce the heat dissipation while reducing the size of the semiconductor laser device. In Patent Document 1, the surface portion of the heat sink is connected to the side surface of the lead by a wire.
JP 2001-111152 A

  However, in the semiconductor laser device described in Patent Document 1, it is possible to suppress a reduction in heat dissipation to some extent while reducing the size, but the distance between the rear end portion of the heat sink and the main body portion becomes longer. Therefore, the heat dissipation performance decreases. In addition, the length of the laser beam emission direction of the semiconductor laser device becomes long. Further, since the lead and the surface portion of the heat sink disposed in front of the lead are connected to the side surface of the lead by the wire, the length of the wire becomes longer than the shortest distance from the surface portion of the heat sink to the lead. There is an inconvenience. For this reason, the inductance of the semiconductor laser device is increased as compared with the case of being connected at the shortest distance, so that there is a problem that high-speed response is inferior.

  The present invention has been made to solve the above-described problems, and one object of the present invention is to suppress a reduction in heat dissipation while reducing the size and improve high-speed response. A semiconductor laser device that can be made to provide is provided.

Means for Solving the Problems and Effects of the Invention

  In order to achieve the above object, a semiconductor laser device according to a first aspect of the present invention includes a package including a main body portion and a first heat sink, a second heat sink attached to a first surface portion of the first heat sink, A laser beam from the semiconductor laser element portion, comprising: a semiconductor laser element portion attached to the second surface portion of the heat sink; and a first lead attached through the third surface portion of the main body portion where the first heat sink is disposed. The first front end portion of the first lead is disposed behind the first rear end portion of the second heat sink and is electrically connected to the semiconductor laser element portion when the emission direction of the first electrode is the front direction. The part is electrically connected to the first front end. Here, in the present invention, “electrically connected to the first front end” means to be electrically connected by, for example, a wire.

  In the present invention, the emission direction of the laser light is a direction in which laser light having a relatively high light intensity is emitted from the laser light emitted from the pair of resonator surfaces.

  In the semiconductor laser device according to the first aspect of the present invention, as described above, when the emission direction of the laser light from the semiconductor laser element portion is the front, the first front end portion of the first lead is connected to the second heat sink. It arrange | positions back rather than a 1st rear-end part. By configuring in this way, the width of the second heat sink can be expanded outside the first lead, so that the volume of the second heat sink can be increased without increasing the size of the semiconductor laser device. Thereby, it can suppress that heat dissipation falls, aiming at size reduction.

  Further, by electrically connecting the second surface portion of the second heat sink to the first front end portion of the first lead, a short distance as close as possible to the shortest distance from the second surface portion of the second heat sink to the first lead. Can be connected with. As a result, the inductance of the semiconductor laser device can be made as small as possible, so that high-speed response can be improved. In addition, since the length of the first lead protruding in the laser beam emission direction from the third surface portion of the main body portion where the first heat sink is disposed can be shortened, the first rear end portion of the second heat sink and the main body The distance to the part can be shortened, and as a result, the heat dissipation is further improved.

  In the semiconductor laser device according to the first aspect, preferably, the second surface portion of the second heat sink and the first front end portion of the first lead are connected via a wire. If comprised in this way, the 2nd surface part of the 2nd heat sink and the 1st front end part of the 1st lead can be connected easily.

  In the semiconductor laser device according to the first aspect, preferably, the first side surface of the second heat sink is in the horizontal direction when the direction orthogonal to the laser beam emission direction and parallel to the first surface portion is the horizontal direction. The first lead is disposed outside the inner surface of the first lead. If comprised in this way, since the volume of a 2nd heat sink can be enlarged easily, it can suppress easily that heat dissipation falls.

  In this case, preferably, in the horizontal direction, the first side surface is disposed outside the outer surface of the first lead. If comprised in this way, since the volume of a 2nd heat sink can be enlarged more easily, it can suppress more easily that heat dissipation falls.

  In the semiconductor laser device according to the first aspect, preferably, the semiconductor laser device further includes a second lead that is attached through the third surface portion and is electrically independent from the first lead, and the second front end portion of the second lead is The semiconductor laser element portion is disposed behind the first rear end portion and is electrically connected to the second front end portion. With this configuration, the horizontal width of the second heat sink can be expanded to the outside of the second lead side in addition to the first lead side, so that the volume of the second heat sink can be further increased. . As a result, it can suppress more that heat dissipation falls. Further, by electrically connecting the semiconductor laser element portion to the second front end portion of the second lead, it is possible to connect at a short distance as close as possible to the shortest distance from the semiconductor laser element portion to the second lead. Thereby, since the inductance of the semiconductor laser device can be further reduced, it is possible to improve the high-speed response.

  In this case, preferably, the second surface portion includes a first electrode and a second electrode that are electrically independent from each other, and the first electrode is electrically connected to the back surface side of the semiconductor laser element portion, and the second surface portion The electrode is electrically connected to the surface side opposite to the back surface side of the semiconductor laser element portion and is also electrically connected to the second front end portion. If comprised in this way, compared with the case where the surface side of a semiconductor laser element part and the 2nd front-end part of a 2nd lead are directly electrically connected, it can connect with a short distance as a full length. Thereby, since the inductance of the semiconductor laser device can be further reduced, it is possible to further improve the high-speed response.

  In this case, preferably, the first front end and the second front end are arranged on the same plane perpendicular to the laser beam emission direction. According to this configuration, unlike the case where the positions of the first front end portion of the first lead and the second front end portion of the second lead are shifted from each other, either the first lead or the second lead disposed further forward is used. The position of the first rear end portion of the second heat sink is not limited by the position of the one front end portion. As a result, since the first rear end portion of the second heat sink can be expanded to the rear side as a whole, it is possible to further suppress a decrease in heat dissipation.

  In this case, preferably, when the direction perpendicular to the laser beam emission direction and parallel to the surface of the first heat sink is defined as the horizontal direction, the first side surface is higher than the inner side surface of the first lead in the horizontal direction. The second side surface of the second heat sink opposite to the first side surface is disposed outside the inner side surface of the second lead. If comprised in this way, a 2nd heat sink can be easily extended not only to the 1st lead side but to the 2nd lead side. Thereby, since the volume of a 2nd heat sink can be enlarged more easily, it can suppress more easily that heat dissipation falls.

  In this case, preferably, in the horizontal direction, the first side surface is disposed outside the outer surface of the first lead, and the second side surface is disposed outside the outer surface of the second lead. ing. If comprised in this way, since the volume of a 2nd heat sink can be enlarged further easily, it can suppress more easily that heat dissipation falls.

  In the semiconductor laser device according to the first aspect, the semiconductor laser device further includes a second lead that is attached through the third surface portion and is electrically independent from the first lead, and the second front end portion is formed from the first rear end portion. Is also placed forward. If comprised in this way, the side surface extended in the emission direction of the laser beam of a 2nd lead and the surface side of a semiconductor laser element part can be connected easily.

  In the semiconductor laser device according to the first aspect, preferably, the semiconductor laser element portion and the second front end portion are connected via a wire. If comprised in this way, a semiconductor laser element part and the 2nd front-end part of a 2nd lead can be connected easily.

  In this case, preferably, the main body has a substantially circular outer shape when viewed from the laser beam emitting direction side, and the package is disposed on the main body and is electrically connected to the first lead and the second lead. The first lead, the second lead, and the third lead are arranged on a line segment that constitutes a predetermined circle when viewed from the laser beam emission direction side, The center of the circle is shifted from the center of the main body in the direction away from the first heat sink. If comprised in this way, since the volume of a 1st heat sink can be enlarged by the part which a 1st lead and a 2nd lead space apart from a 1st heat sink, it can suppress more that heat dissipation falls.

  In this case, preferably, when the horizontal direction is a direction perpendicular to the laser beam emission direction and parallel to the first surface portion, the width of the first heat sink in the horizontal direction is the first lead and the second lead. Greater than the inner spacing between. If comprised in this way, while being able to enlarge the volume of a 1st heat sink, the volume of the 2nd heat sink attached to a 1st heat sink can also be enlarged, and it suppresses more that heat dissipation falls. be able to.

  In this case, preferably, when the direction perpendicular to the laser beam emission direction and parallel to the first surface portion is the horizontal direction, the width of the second heat sink in the horizontal direction is the first lead and the second lead. Greater than the inner spacing between. If comprised in this way, since the volume of a 2nd heat sink can be enlarged, it can suppress more that heat dissipation falls.

  In the semiconductor laser device according to the first aspect, preferably, the first front end portion is arranged on a plane substantially the same as the third surface portion. If comprised in this way, the 1st front-end part of a 1st lead | read | reed can be arrange | positioned more back with respect to the emitting direction of a laser beam. Thereby, since the 2nd rear-end part of a 2nd heat sink can be expanded to the back side, it can suppress more that heat dissipation falls.

  In the semiconductor laser device according to the first aspect described above, preferably, the outer shape of the main body when viewed from the laser beam emission direction side is partly linear and the other part is arcuate. is there. With this configuration, the height or width of the outer shape can be reduced as compared with the case where the outer shape of the main body is circular, and thus the semiconductor laser device can be easily downsized.

  In this case, preferably, two or more portions having a linear shape are formed. With this configuration, the height or width of the outer shape can be further reduced as compared with the case where only one part of the outer shape of the main body is linear, and thus the semiconductor laser device can be easily reduced in size. can do.

  In the semiconductor laser device according to the first aspect, preferably, the first front end portion is inclined in a direction that forms an obtuse angle with respect to the second surface portion. If comprised in this way, when connecting the 1st front-end part of a 1st lead and the 2nd surface part of a 2nd heat sink by a wire etc., a semiconductor laser element part does not become trouble easily. As a result, wiring between the first front end portion of the first lead and the second surface portion of the second heat sink can be easily performed.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(First embodiment)
FIG. 1 is a plan view for explaining the structure of the semiconductor laser device according to the first embodiment of the present invention. FIG. 2 is a side view for explaining the structure of the semiconductor laser device according to the first embodiment shown in FIG. FIG. 3 is a front view of the semiconductor laser device according to the first embodiment shown in FIG. 1 as seen from the laser beam emission direction side. FIG. 4 is a perspective view for explaining the structure of the semiconductor laser device according to the first embodiment shown in FIG. The structure of the semiconductor laser device 1 according to the first embodiment of the present invention will be described with reference to FIGS.

  As shown in FIGS. 1 to 3, the semiconductor laser device 1 according to the first embodiment of the present invention includes a base 2, leads 3, 4 and 5 attached to the base 2 and electrically independent from each other, and a base 2. The base 6, the lead 5, and the header 6 constitute a package. The semiconductor laser device 1 further includes a submount 7 made of aluminum nitride (AlN) attached to the header 6 and a semiconductor laser element portion 8 attached to the submount 7. The base 2 is an example of the “main body” in the present invention. The lead 3, the lead 4 and the lead 5 are examples of the “first lead”, the “second lead” and the “third lead” in the present invention, respectively. The header 6 is an example of the “first heat sink” in the present invention, and the submount 7 is an example of the “second heat sink” in the present invention.

  As shown in FIG. 4, the semiconductor laser device 1 has a cap 9 mounted on the surface 2 a of the base 2 on the laser beam emission direction (arrow Z1 direction (front)) side. The surface 2a is an example of the “third surface portion” in the present invention. The cap 9 is formed with an optical window 9a through which the laser light emitted from the semiconductor laser element portion 8 is transmitted. 1 to 3 and FIGS. 5 to 18 described later, a semiconductor laser device in which the cap 9 is omitted is illustrated.

  Here, the emission direction of the laser beam emitted from the semiconductor laser element unit 8 and the opposite direction thereof are indicated by arrows Z1 and Z2, respectively, and the arrow Z1 direction (front) and the Z2 direction (rear) are the front-rear direction of the semiconductor laser device 1. Call it. The direction perpendicular to the surface 6a that is the upper surface of the header 6 to which the submount 7 is attached (the direction in which the submount 7 is attached to the surface 6a) is indicated by the arrow Y1, and the direction opposite to the arrow Y1 is indicated by the arrow. The arrow Y1 (upward) and the Y2 direction (lower) are indicated by Y2, and are referred to as the vertical direction of the semiconductor laser device 1. In addition, directions orthogonal to both the arrow Z1 and Z2 directions and the arrow Y1 and Y2 directions are indicated by arrows X1 and X2, which are referred to as the horizontal direction of the semiconductor laser device 1. In addition, about each of these directions, it is the same also in each embodiment mentioned later. The surface 6a of the header 6 is an example of the “first surface portion” in the present invention.

  The base 2 is formed in a substantially circular shape when viewed from the laser beam emission direction (arrow Z1 direction (front)) side. Moreover, since the base 2 is made of metal such as iron or copper, the heat dissipation is high.

  The leads 3 and 4 are made of metal and are disposed so as to penetrate the surface 2a of the base 2 and the surface 2b on the direction of arrow Z2 (rear). The lead 3 is formed so that the front end portion 3a on the front side (arrow Z1 direction side) protrudes from the surface 2a of the base 2 on the arrow Z1 direction (front) side by a distance D1 to the arrow Z1 direction (front) side. Has been. The front end 3a of the lead 3 is an example of the “first front end” in the present invention. Further, the lead 4 is arranged so that the front end portion 4a on the arrow Z1 direction (front) side protrudes from the surface 2a on the arrow Z1 direction (front) side of the base 2 to the arrow Z1 direction (front) side by a distance D2. It is formed, and its side surface extends in the laser beam emission direction (arrow Z1 direction). The front end 4a of the lead 4 is an example of the “second front end” in the present invention. The lead 5 is disposed on the surface 2b by being welded to the surface 2b of the base 2 on the arrow Z2 direction (rear) side.

  Further, as shown in FIG. 3, the leads 3, 4 and 5 are arranged on a line segment constituting a predetermined circle 10 when viewed from the direction of the arrow Z <b> 1 (front). Further, the center 10 a of the predetermined circle 10 is arranged so as to be offset from the center 2 c of the circular base 2 in a direction away from the surface 6 a which is the upper surface of the header 6 (arrow Y1 direction). As a result, the leads 3 and 4 can be separated as much as possible from the header 6 arranged on the arrow Y2 direction side.

  Further, as shown in FIG. 3, the leads 3 and 4 are covered with insulators 200 and 300 made of glass at the penetrating portions of the base 2, respectively. Thereby, the leads 3 and 4 are electrically insulated from the base 2 respectively. In the first embodiment of the present invention, the lead 5 is not used for energization. The lead 5 is formed integrally with the base 2.

  Here, in the first embodiment, the header 6 is disposed on the surface 2a by being attached to the surface 2a on the arrow Z1 direction (front side) side of the base 2, and the base 2 and the header 6 are electrically connected. It is connected to the. Further, as shown in FIG. 1, the width W1 of the header 6 in the horizontal direction, that is, the directions of the arrows X1 and X2 (the direction orthogonal to the laser beam emission direction (arrow Z1 direction)) is It is formed so as to be larger than the inner space W2. Further, as shown in FIG. 3, the surface 6a on the arrow Y1 direction side which is the upper surface of the header 6 is formed flat, and the back surface on the arrow Y2 direction side is formed in an arc shape. Moreover, since the header 6 is made of metal, it has high heat dissipation. Thereby, it is possible to function as a heat sink of the semiconductor laser device 1.

  The submount 7 has a rectangular parallelepiped shape, and is attached to the surface 6a on the arrow Y1 direction side, which is the top surface of the header 6, via a conductive adhesive layer (not shown) such as AuSn solder. 6 is electrically connected to the surface portion on the arrow Y2 direction side, which is the back surface of the submount 7. Further, the submount 7 has a surface 7a on the arrow Z2 direction (rear) side disposed on the arrow Z1 direction (front) side by a distance D3 from the surface 2a on the arrow Z1 direction (front) side of the base 2. The surface 7a of the submount 7 is an example of the “first rear end” in the present invention. Specifically, the submount 7 is disposed such that the distance D3 is larger than the distance D1 and smaller than the distance D2. That is, the surface 7a on the arrow Z2 direction (rear) side of the submount 7 is arranged on the arrow Z1 direction (front) side with respect to the front end portion 3a of the lead 3, and the arrow Z2 with respect to the front end portion 4a of the lead 4 It is arranged on the direction (rear) side.

  Further, the front end 3a of the lead 3 and the surface 7a of the submount 7 on the arrow Z2 direction (rear) side are separated by a distance D8. Further, as shown in FIG. 1, the side surface 7b on the arrow X1 direction side of the submount 7 is on the outer side (the arrow X1 direction side) of the inner surface 3b that is the side surface on the arrow X2 direction side of the lead 3 in the horizontal direction. Has been placed. Further, the side surface 7b is disposed outside the outer surface 3c that is the side surface of the lead 3 on the arrow X1 direction side. The side surface 7b on the arrow X1 direction side of the submount 7 is an example of the “first side surface” in the present invention.

  The submount 7 made of insulating AlN includes an electrode 7c made of a Ti layer, a Pt layer, and an Au layer on the surface portion 7u on the arrow Y1 direction side that is the upper surface. The surface portion 7u of the submount 7 is an example of the “second surface portion” in the present invention. The electrode 7 c is connected to the front end portion 3 a of the lead 3 by an Au wire 100. The submount 7 is configured to function as a heat sink of the semiconductor laser device 1, as with the header 6.

  The semiconductor laser element portion 8 has a rectangular parallelepiped shape, includes one electrode (not shown) on the surface on the arrow Y2 direction side that is the back surface, and also has the shape on the arrow Y1 direction side that is the upper surface. The surface 8c includes the other electrode (not shown). The surface of the semiconductor laser element portion 8 on the arrow Y2 direction side is attached onto the electrode 7c of the submount 7 via a conductive adhesive layer (not shown) such as AuSn solder. Thereby, the back surface side of the semiconductor laser element portion 8 is electrically connected to the lead 3 via the electrode 7 c and the wire 100.

  Further, the semiconductor laser element portion 8 includes a light emitting surface 8a and a light reflecting surface 8b in the direction in which the resonator extends (directions of arrows Z1 and Z2). The light intensity of the laser light emitted in the Z1 direction from the light emitting surface 8a is greater than the light intensity of the laser light emitted in the Z2 direction from the light reflecting surface 8b. In addition, the semiconductor laser element unit 8 is configured to emit blue-violet light having a wavelength of about 405 nm. Further, the surface 8 c of the semiconductor laser element portion 8 on the side opposite to the submount 7 (upper arrow Y 1 direction side) is connected to the side surface of the lead 4 by the Au wire 100. Thereby, the surface 8 c side of the semiconductor laser element portion 8 is electrically connected to the lead 4.

  In the first embodiment, as described above, the front end portion 3a of the lead 3 is arranged in the arrow Z2 direction (rear) with respect to the surface 7a on the arrow Z2 direction (rear) side of the submount 7, thereby The width W1 (side surface 7b) can be expanded outward (arrow X1 direction side). By configuring in this way, the volume of the submount 7 can be increased without increasing the size of the semiconductor laser device 1, so that it is possible to suppress a reduction in heat dissipation while reducing the size.

  Further, by connecting the electrode 7c of the submount 7 and the front end portion 3a of the lead 3 via the Au wire 100, the surface portion 7u of the submount 7 and the front end portion 3a of the lead 3 can be easily connected. it can. Further, since the connection can be made with the short-length Au wire 100 as close as possible to the shortest distance from the electrode 7c of the submount 7 to the lead 3, the inductance of the semiconductor laser device 1 can be minimized. As a result, high-speed response can be improved. Further, since the distance D1 protruding from the base 2 of the lead 3 in the laser beam emission direction (arrow Z1 direction) can be shortened, the distance D3 between the surface 7a of the submount 7 on the arrow Z2 direction side and the base 2 is set. It can be shortened and the heat dissipation is further improved.

  Further, in the first embodiment, in the horizontal direction, the side surface 7b on the arrow X1 direction side of the submount 7 is arranged on the outer side (arrow X1 direction side) of the lead 3 with respect to the volume of the submount 7. Therefore, it is possible to easily prevent the heat dissipation from deteriorating. Furthermore, in the first embodiment, the side surface 7b on the arrow X1 direction side of the submount 7 is disposed outside the outer surface 3c of the lead 3 (arrow X1 direction side) in the horizontal direction, thereby reducing the volume of the submount 7. Therefore, it is possible to further easily suppress a decrease in heat dissipation.

  In the first embodiment, the lead 3, the lead 4, and the lead 5 are arranged on a line segment constituting the predetermined circle 10, and the center 10 a of the predetermined circle 10 is separated from the surface 6 a that is the upper surface of the header 6. The base 2 is arranged so as to deviate from the center 2c. As a result, the volume of the header 6 can be increased by the amount that the lead 3 and the lead 4 are separated from the header 6. As a result, it can suppress that heat dissipation falls.

  In the first embodiment, the width W1 of the header 6 is larger than the inner distance W2 between the lead 3 and the lead 4 in the horizontal direction. Thereby, while being able to enlarge the volume of the header 6, the volume of the submount 7 attached to the header 6 can also be enlarged. As a result, it can suppress more that heat dissipation falls.

  In the first embodiment, the front end portion 4a of the lead 4 is disposed in front of the surface 7a of the submount 7 on the arrow Z2 direction side, so that the side surface of the lead 4a and the upper surface of the semiconductor laser element portion 8 are arranged. A certain surface 8c can be easily connected.

(Second Embodiment)
FIG. 5 is a plan view for explaining the structure of the semiconductor laser device according to the second embodiment of the present invention. FIG. 6 is a side view for explaining the structure of the semiconductor laser device according to the second embodiment shown in FIG. FIG. 7 is a front view of the semiconductor laser device according to the second embodiment shown in FIG. 5 as seen from the laser beam emission direction side. 5 to 7, in the second embodiment, unlike the first embodiment, the front end 21a of the lead 21 on the arrow Z1 direction (front) side is the arrow Z1 direction (front) side of the base 2. The semiconductor laser device 20 disposed on the arrow Z1 direction (front side) by a distance D1 from the surface 2a of the semiconductor will be described. The lead 21 is an example of the “second lead” in the present invention. 5 to 7, the same reference numerals are given to the same configurations as those in the first embodiment.

  In the semiconductor laser device 20 according to the second embodiment, as shown in FIGS. 5 to 7, the base 2, the leads 3, 5 and 21 attached to the base 2 and electrically independent from each other, and the base 2 are attached. Header 6. The semiconductor laser device 20 further includes a submount 22 made of aluminum nitride (AlN) attached to the header 6 and a semiconductor laser element portion 8 attached to the submount 22. The submount 22 is an example of the “second heat sink” in the present invention.

  Here, in the second embodiment, the lead 21 is metallic, and is disposed so as to penetrate the surface 2a of the base 2 and the surface 2b on the arrow Z2 direction (rear) side. It is covered with an insulator 400 made of Thereby, the lead 21 is electrically insulated from the base 2. Similarly to the lead 3, the lead 21 has a front end 21a on the arrow Z1 direction (front) side protruding from the surface 2a on the arrow Z1 direction (front) side of the base 2 to the arrow Z1 direction (front) side by a distance D1. It is formed so that it may be arranged. That is, the front end portion 3a of the lead 3 and the front end portion 21a of the lead 21 are arranged on the same plane perpendicular to the laser beam emission direction (arrow Z1 direction). The front end 21a of the lead 21 is an example of the “second front end” in the present invention.

  In the second embodiment, the submount 22 has a rectangular parallelepiped shape, and the surface on the arrow Y1 direction side, which is the upper surface of the header 6, via a conductive adhesive layer (not shown) such as AuSn solder. The front surface 6a of the header 6 and the surface portion on the arrow Y2 direction side which is the back surface of the submount 22 are electrically connected. The submount 22 has a surface 22a on the arrow Z2 direction (rear) side disposed on the arrow Z1 direction (front) side by a distance D4 from the surface 2a on the arrow Z1 direction (front) side of the base 2. The surface 22a of the submount 22 is an example of the “rear end portion of the second heat sink” in the present invention.

  Specifically, the submount 22 is disposed so that the distance D4 is larger than the distance D1. That is, the surface 22a on the arrow Z2 direction (rear) side of the submount 22 is disposed on the arrow Z1 direction (front) side of the front end portion 3a of the lead 3 and the front end portion 21a of the lead 21. The surface 22a of the submount 22 is an example of the “first rear end” in the present invention.

  Further, as shown in FIG. 5, the side surface 22b on the arrow X1 direction side of the submount 22 is on the outer side (the arrow X1 direction side) of the inner surface 3b that is the side surface on the arrow X2 direction side of the lead 3 in the horizontal direction. Has been placed. Further, the side surface 22b is disposed outside the outer surface 3c which is the side surface of the lead 3 on the arrow X1 direction side in the horizontal direction. The side surface 22b on the arrow X1 direction side of the submount 22 is an example of the “first side surface” in the present invention.

  In addition, the side surface 22c (second side surface of the second heat sink) of the submount 22 on the arrow X2 direction side is outside of the inner side surface 21b which is the side surface of the lead 21 on the arrow X1 direction side in the horizontal direction (arrow X2 direction side). ). Further, the side surface 22c is disposed outside the outer surface 21c which is the side surface of the lead 21 on the arrow X2 direction side in the horizontal direction. Thereby, the width W3 of the submount 22 in the directions of arrows X1 and X2 (direction orthogonal to the laser beam emission direction (arrow Z1 direction)) is made larger than the inner distance W4 between the lead 3 and the lead 21. Is possible.

  The submount 22 made of insulating AlN includes an electrode 22d made of a Ti layer, a Pt layer, and an Au layer on the surface portion 22u on the arrow Y1 direction side, which is the upper surface. The surface portion 22u of the submount 22 is an example of the “second surface portion” in the present invention. Further, the electrode 22 d is connected to the front end portion 3 a of the lead 3 by the Au wire 100. The submount 22 is configured to function as a heat sink for the semiconductor laser device 20.

  In the second embodiment, the surface on the arrow Y2 direction side which is the back surface of the semiconductor laser element portion 8 is placed on the electrode 22d of the submount 22 via a conductive adhesive layer (not shown) such as AuSn solder. It is attached. Thereby, the back surface side of the semiconductor laser element portion 8 is electrically connected to the lead 3 via the electrode 22 d and the wire 100. Further, the surface 8 c on the arrow Y 1 direction side, which is the upper surface of the semiconductor laser element portion 8, is connected to the front end portion 21 a of the lead 21 by the Au wire 100. As a result, the surface 8 c side of the semiconductor laser element portion 8 is electrically connected to the lead 21.

  The remaining structure of the semiconductor laser device 20 according to the second embodiment is similar to that of the aforementioned first embodiment.

  In the second embodiment, as described above, the front end portion 21a of the lead 21 is arranged in the arrow Z2 direction (rear) with respect to the surface 22a of the submount 22 on the arrow Z2 direction (rear) side. With this configuration, the width W3 of the submount 22 in the directions of arrows X1 and X2 can be expanded to the outside of the lead 21 (arrow X2 direction) in addition to the lead 3 side (arrow X1 direction). Thereby, since the volume of the submount 22 can be enlarged, it can suppress that heat dissipation falls.

  In the present embodiment, the side surface 22 b of the submount 22 is arranged outside the inner side surface 3 b of the lead 3, and the side surface 22 c of the submount 22 is arranged outside the inner side surface 21 b of the lead 21. Has been. Thereby, the submount 22 can be easily expanded not only to the lead 3 side but also to the lead 21 side, so that the volume of the submount 22 can be further increased. As a result, it is possible to easily and easily suppress a decrease in heat dissipation.

  Furthermore, in the present embodiment, the side surface 22 b of the submount 22 is disposed outside the outer surface 3 c of the lead 3, and the side surface 22 c of the submount 22 is disposed outside the outer surface 21 c of the lead 21. Has been. Thereby, the volume of the submount 22 can be further increased. As a result, it is possible to more easily suppress a decrease in heat dissipation.

  In the second embodiment, the width W3 of the submount 22 in the horizontal direction is larger than the inner distance W4 between the lead 3 and the lead 21, so that the volume of the submount 22 can be increased. Thereby, it can suppress more that heat dissipation falls.

  In the second embodiment, the surface 8 c which is the upper surface of the semiconductor laser element portion 8 and the front end portion 21 a of the lead 21 are connected via the Au wire 100. Thereby, the semiconductor laser element portion 8 and the front end portion 21a of the lead 21 can be easily connected. Furthermore, since it is possible to electrically connect (wiring) with the Au wire 100 having a short length as close as possible to the shortest distance from the semiconductor laser element portion 8 to the lead 21, the inductance of the semiconductor laser device 20 can be reduced. . As a result, it is possible to improve high-speed response.

  In the second embodiment, the front end portion 3a of the lead 3 and the front end portion 21a of the lead 21 are arranged on the same plane orthogonal to the laser beam emission direction (arrow Z1 direction). Thus, unlike the case where the positions of the front end portions of the lead 3 and the lead 21 are shifted from each other, the sub-position depends on the position of the front end portion of either the lead 3 or the lead 21 arranged more forward (in the arrow Z1 direction). The position of the surface 22a of the mount 22 is not limited. As a result, since the surface 22a of the submount 22 can be expanded to the rear side (arrow Z2 direction side) as a whole, it is possible to further suppress a decrease in heat dissipation.

  The remaining effects of the second embodiment are similar to those of the aforementioned first embodiment.

(Third embodiment)
FIG. 8 is a plan view for explaining the structure of the semiconductor laser device according to the third embodiment of the present invention. Referring to FIG. 8, in the third embodiment, unlike in the second embodiment, the submount 31 is provided on the surface 31u on the arrow Y1 direction side, which is the upper surface, and the electrode 31d and the electrode that are electrically independent from each other. The semiconductor laser device 30 including 31e will be described. The submount 31 and the surface portion 31u thereof are examples of the “second heat sink” and the “second surface portion” in the present invention, respectively. The electrode 31d is an example of the “first electrode” in the present invention, and the electrode 31e is an example of the “second electrode” in the present invention. Moreover, in FIG. 8, the same code | symbol is attached | subjected about the structure similar to 2nd Embodiment.

  In the semiconductor laser device 30 according to the third embodiment, as shown in FIG. 8, a base 2, leads 3, 5 and 21 attached to the base 2 and electrically independent from each other, and a header 6 attached to the base 2. And. The semiconductor laser device 30 further includes a submount 31 made of aluminum nitride (AlN) attached to the header 6 and a semiconductor laser element portion 8 attached to the submount 31.

  Here, in the third embodiment, the submount 31 has a rectangular parallelepiped shape, and is on the arrow Y1 direction side which is the upper surface of the header 6 via a conductive adhesive layer (not shown) such as AuSn solder. The surface 6a of the header 6 is electrically connected to the surface portion on the arrow Y2 direction side which is the back surface of the submount 31. Further, the submount 31 has a surface 31a on the arrow Z2 direction (rear) side disposed on the arrow Z1 direction (front) side by a distance D5 from the surface 2a of the base 2 on the arrow Z1 direction (front) side. The surface 31a of the submount 31 is an example of the “first rear end” in the present invention.

  Specifically, the submount 31 is disposed such that the distance D5 is larger than the distance D1. That is, the surface 31a on the arrow Z2 direction (rear) side of the submount 31 is disposed on the arrow Z1 direction (front) side of the front end portion 3a of the lead 3 and the front end portion 21a of the lead 21.

  Further, the side surface 31b on the arrow X1 direction side of the submount 31 is disposed on the outer side (the arrow X1 direction side) of the inner surface 3b that is the side surface of the lead 3 on the arrow X2 direction side in the horizontal direction. Further, the side surface 31b is disposed outside the outer surface 3c which is the side surface of the lead 3 on the arrow X1 direction side in the horizontal direction. The side surface 31b on the arrow X1 direction side of the submount 31 is an example of the “first side surface” in the present invention.

  Further, the side surface 31c (second side surface of the second heat sink) of the submount 31 on the arrow X2 direction side is outside of the inner side surface 21b which is the side surface of the lead 21 on the arrow X1 direction side in the horizontal direction (arrow X2 direction side). ). Further, the side surface 31c is disposed outside the outer surface 21c which is the side surface of the lead 21 on the arrow X2 direction side in the horizontal direction. As a result, the width W5 of the submount 31 in the directions of arrows X1 and X2 (the direction perpendicular to the laser beam emission direction (arrow Z1 direction)) is made larger than the inner distance W4 between the lead 3 and the lead 21. Is possible.

  In addition, the submount 31 made of insulating AlN includes a Ti layer, a Pt layer, and an Au layer on the upper surface portion 31u on the arrow Y1 direction side, and an electrode 31d and an electrode 31e that are electrically independent from each other. Contains. The surface portion 31u of the submount 31 is an example of the “second surface portion” in the present invention. Further, the electrode 31 d is connected to the front end portion 3 a of the lead 3 by the Au wire 100. The electrode 31 e is connected to the front end portion 21 a of the lead 21 by the Au wire 100. The submount 31 is configured to function as a heat sink for the semiconductor laser device 30.

  In the third embodiment, the surface on the arrow Y2 direction side, which is the back surface of the semiconductor laser element portion 8, is placed on the electrode 31d of the submount 31 via a conductive adhesive layer (not shown) such as AuSn solder. It is attached. Thereby, the back surface side of the semiconductor laser element portion 8 is electrically connected to the lead 3 through the electrode 31 d and the wire 100. Further, the surface 8 c on the arrow Y 1 direction side of the semiconductor laser element portion 8 is connected to the electrode 31 e of the submount 31 by the Au wire 100. As a result, the surface 8 c side of the semiconductor laser element portion 8 is electrically connected to the lead 21 via the electrode 31 e and the two wires 100.

  The remaining structure of the semiconductor laser device 30 according to the third embodiment is similar to that of the aforementioned second embodiment.

  In the third embodiment, as described above, the electrode 31e of the submount 31 is connected to the surface 8c side opposite to the back surface side (arrow Y1 direction side) of the semiconductor laser element portion 8 by the Au wire 100, The electrode 31e is connected to the front end portion 21a of the lead 21 by the Au wire 100. As a result, the length of the Au wire 100 can be reduced as compared with the case where the front surface portion 21a of the lead 21 and the front end portion 21a of the lead 21 are directly connected by the Au wire 100. As a result, since the inductance of the semiconductor laser device 30 can be reduced, high-speed response can be improved.

  The remaining effects of the third embodiment are similar to those of the aforementioned second embodiment.

(Fourth embodiment)
FIG. 9 is a front view of the semiconductor laser device according to the fourth embodiment of the present invention viewed from the laser beam emission direction side. Referring to FIG. 9, in the fourth embodiment, unlike the first embodiment, the outer shape of the base 41 is formed in a circular shape with a part on the arrow Y1 direction side cut off. The device 40 will be described. The base 41 is an example of the “main body” in the present invention. Moreover, in FIG. 9, the same code | symbol is attached | subjected about the structure similar to 1st Embodiment.

  In the semiconductor laser device 40 according to the fourth embodiment, as shown in FIG. 9, a base 41, leads 3, 4 and 5 attached to the base 41 and electrically independent from each other, and a header 6 attached to the base 41. The package is constituted by the base 41, the leads 5, and the header 6. The semiconductor laser device 40 further includes a submount 7 made of aluminum nitride (AlN) attached to the header 6, and a semiconductor laser element portion 8 attached to the submount 7.

  In the fourth embodiment, the leads 3 and 4 are disposed so as to penetrate the surface 41a on the arrow Z1 direction (front) side and the surface on the arrow Z2 direction (rear) side of the base 41, respectively. The surface 41a is an example of the “third surface portion” in the present invention. The header 6 is attached to the surface 41a of the base 41, and the base 41 and the header 6 are electrically connected.

  Here, in 4th Embodiment, as shown in FIG. 9, the base 41 is formed in the circular shape of the state by which the arrow Y1 direction side part was cut. Specifically, when viewed from the laser beam emission direction side (arrow Z1 direction side), the outer shape of the base 41 in the arrow Y1 direction side (the side where the header 6 is not disposed with respect to the center of the base 41). Is formed in a circular shape, and a portion other than the portion formed in the linear shape (the side on which the header 6 is disposed with respect to the center of the base 41) is formed in an arc shape. Moreover, since the base 41 is made of metal such as iron or copper, the heat dissipation is high.

  The remaining structure of the semiconductor laser device 40 according to the fourth embodiment is similar to that of the aforementioned first embodiment.

  In the fourth embodiment, as described above, the base 41 is formed in a circular shape in which a part on the arrow Y1 direction side is cut. In other words, the outer shape of the base 41 when viewed from the laser beam emission direction side (arrow Z1 direction side) is partly linear on the arrow Y1 direction side and part other than the part is arcuate. . As a result, the height of the base 41 in the vertical direction (the directions of the arrows Y1 and Y2) can be kept low, and the semiconductor laser device 40 can be downsized.

  The remaining effects of the fourth embodiment are similar to those of the aforementioned first embodiment.

  Further, in the fourth embodiment, a configuration in which a part on the arrow Y1 direction side is cut into a linear shape with respect to the outer shape of the base 41 when viewed from the laser beam emission direction side (arrow Z1 direction side). Although shown, this invention is not restricted to this, You may make it cut another direction and make it a linear shape.

(Fifth embodiment)
FIG. 10 is a front view of the semiconductor laser device according to the fifth embodiment of the present invention viewed from the laser beam emitting direction side. Referring to FIG. 10, in the fifth embodiment, unlike the fourth embodiment, the outer shape of the base 51 is a circle in which a part on the arrow Y1 direction side and a part on the arrow Y2 direction side are cut. The semiconductor laser device 50 formed in a shape will be described. The base 51 is an example of the “main body” in the present invention. Moreover, in FIG. 10, the same code | symbol is attached | subjected about the structure similar to 1st Embodiment.

  In the semiconductor laser device 50 according to the fifth embodiment, as shown in FIG. 10, a base 51, leads 3, 4 and 5 attached to the base 51 and electrically independent from each other, and a header 6 attached to the base 51. The base 51, the lead 5 and the header 6 constitute a package. The semiconductor laser device 50 further includes a submount 7 made of aluminum nitride (AlN) attached to the header 6 and a semiconductor laser element portion 8 attached to the submount 7.

  In the fifth embodiment, the leads 3 and 4 are disposed so as to penetrate the surface 51a on the arrow Z1 direction (front) side and the surface on the arrow Z2 direction (rear) side of the base 51, respectively. The surface 51a is an example of the “third surface portion” in the present invention. The header 6 is attached to the surface 51a of the base 51, and the base 51 and the header 6 are electrically connected.

  Here, in the fifth embodiment, as shown in FIG. 10, the base 51 is formed in a circular shape in which a part on the arrow Y1 direction side and a part on the arrow Y2 direction side are cut. Specifically, when viewed from the laser beam emission direction side (arrow Z1 direction side), the outer shape of the base 51 in the arrow Y1 direction side (the side where the header 6 is not disposed with respect to the center of the base 51). Is formed in a linear shape, and a part on the arrow Y2 direction side (the side on which the header 6 is disposed with respect to the center of the base 51) is also formed in a linear shape. Further, in the outer shape of the base 51, portions other than the portion formed in a linear shape are formed in an arc shape.

  In the fifth embodiment, the two linear portions formed on the outer shape of the base 51 are formed in parallel to each other in the horizontal direction (arrow X1 and X2 directions). Moreover, since the base 51 is made of metal such as iron or copper, the heat dissipation is high.

  The remaining structure of the semiconductor laser device 50 according to the fifth embodiment is similar to that of the aforementioned first embodiment.

  In the fifth embodiment, as described above, the base 51 is formed in a circular shape with a part on the arrow Y1 direction side and a part on the arrow Y2 direction side cut. In other words, the outer shape of the base 51 when viewed from the laser beam emission direction side (arrow Z1 direction side) is a linear shape on part of the arrow Y1 direction side and arrow Y2 direction side, respectively. The part other than is an arc shape. As a result, the height of the base 51 in the directions of the arrows Y1 and Y2 can be kept low, and the semiconductor laser device 50 can be downsized.

  In the fifth embodiment, two linear portions formed on the outer shape of the base 51 are formed in parallel to each other in the horizontal direction (arrow X1 and X2 directions). As a result, the height of the base 51 in the vertical direction (the directions of the arrows Y1 and Y2) can be further reduced, and the semiconductor laser device 50 can be downsized.

  The remaining effects of the fifth embodiment are similar to those of the aforementioned first embodiment.

  In the fifth embodiment, a part on the arrow Y1 direction side and a part on the arrow Y2 direction side are cut from the outer shape of the base 51 when viewed from the laser beam emission direction side (arrow Z1 direction side). However, the present invention is not limited to this, and other directions may be cut to form a linear shape.

(Sixth embodiment)
FIG. 11 is a side view for explaining the structure of the semiconductor laser device according to the sixth embodiment of the present invention. Referring to FIG. 11, in the sixth embodiment, unlike the first embodiment, the lead 61 has a front end 61a on the arrow Z1 direction (front) side with respect to the laser beam emission direction (arrow Z1 direction). The semiconductor laser device 60 formed so as to be inclined will be described. The lead 61 and its front end 61a are examples of the “first lead” and the “first front end” of the present invention, respectively. Moreover, in FIG. 11, the same code | symbol is attached | subjected about the structure similar to 1st Embodiment.

  In the semiconductor laser device 60 according to the sixth embodiment, as shown in FIG. 11, a base 2, leads 4, 5 and 61 attached to the base 2 and electrically independent from each other, and a header 6 attached to the base 2. And. The semiconductor laser device 60 further includes a submount 7 made of aluminum nitride (AlN) attached to the header 6 and a semiconductor laser element portion 8 attached to the submount 7.

  Here, in the sixth embodiment, the lead 61 is made of metal and disposed so as to penetrate the surface 2a of the base 2 and the surface 2b on the side in the arrow Z2 direction (rear). Further, the lead 61 is arranged so that the front end portion 61a on the arrow Z1 direction (front) side protrudes from the surface 2a on the arrow Z1 direction (front) side of the base 2 to the arrow Z1 direction (front) side by a distance D1. Is formed. The front end portion 61a is formed so as to be inclined toward the arrow Y1 direction side with respect to the laser beam emission direction (arrow Z1 direction). That is, the front end portion 61a is inclined in a direction that forms an obtuse angle with respect to the surface portion 7u (surface including the electrode 7c) on the arrow Y1 direction side, which is the upper surface of the submount 7.

  In the sixth embodiment, the electrode 7 c of the submount 7 is connected to the front end portion 61 a of the lead 61 by the Au wire 100. Thereby, the back surface side of the semiconductor laser element portion 8 is electrically connected to the lead 61 via the electrode 7 c and the wire 100.

  The remaining structure of the semiconductor laser device 60 according to the sixth embodiment is similar to that of the aforementioned first embodiment.

  In the sixth embodiment, as described above, the front end portion 61a of the lead 61 is on the arrow Y1 direction side with respect to the laser beam emission direction (arrow Z1 direction), that is, in the arrow Y1 direction that is the upper surface of the submount 7. It is formed so as to incline in a direction that forms an obtuse angle with respect to the side surface portion 7u (surface including the electrode 7c). Thereby, the front end portion 61a is inclined in the direction (arrow Y1 direction) opposite to the direction (arrow Y2 direction) in which the semiconductor laser element portion 8 is arranged, so that the semiconductor laser element portion 8 is not hindered. The front end 61a can be easily connected to the Au wire 100.

  The remaining effects of the sixth embodiment are similar to those of the aforementioned first embodiment.

(Seventh embodiment)
FIG. 12 is a plan view for explaining the structure of the semiconductor laser device according to the seventh embodiment of the present invention. FIG. 13 is a front view of the semiconductor laser device according to the seventh embodiment shown in FIG. 12 as viewed from the laser beam emission direction side. With reference to FIGS. 12 and 13, in the seventh embodiment, a semiconductor laser device 70 using a monolithic two-wavelength semiconductor laser element portion 72 will be described, unlike the second embodiment. The monolithic two-wavelength semiconductor laser element portion 72 is an example of the “semiconductor laser element portion” in the present invention. Moreover, in FIG. 12 and FIG. 13, the same code | symbol is attached | subjected about the structure similar to 2nd Embodiment.

  In the semiconductor laser device 70 according to the seventh embodiment, as shown in FIGS. 12 and 13, the base 2, the leads 3, 5 and 21 attached to the base 2 and electrically independent from each other, and the base 2 are attached. Header 6. The semiconductor laser device 70 further includes a submount 71 made of aluminum nitride (AlN) attached to the header 6, and a monolithic two-wavelength semiconductor laser element portion 72 attached to the submount 71. The submount 71 is an example of the “second heat sink” in the present invention.

  Here, in the seventh embodiment, the submount 71 has a rectangular parallelepiped shape, and is on the arrow Y1 direction side that is the upper surface of the header 6 via a conductive adhesive layer (not shown) such as AuSn solder. The surface 6a of the header 6 is electrically connected to the surface portion on the arrow Y2 direction side which is the back surface of the submount 71. Further, in the submount 71, the surface 71a on the arrow Z2 direction (rear) side is disposed on the arrow Z1 direction (front) side by a distance D6 from the surface 2a on the arrow Z1 direction (front) side of the base 2. The surface 71a of the submount 71 is an example of the “first rear end” in the present invention. Specifically, the submount 71 is disposed such that the distance D6 is greater than the distance D1. That is, the surface 71a on the arrow Z2 direction (rear) side of the submount 71 is disposed on the arrow Z1 direction (front) side of the front end portion 3a of the lead 3 and the front end portion 21a of the lead 21.

  Also, as shown in FIG. 12, the side surface 71b on the arrow X1 direction side of the submount 71 is outside (in the arrow X1 direction side) in the horizontal direction from the inner side surface 3b that is the side surface of the lead 3 on the arrow X2 direction side. Has been placed. Further, the side surface 71b is disposed outside the outer surface 3c, which is the side surface of the lead 3 on the arrow X1 direction side, in the horizontal direction. The side surface 71b on the arrow X1 direction side of the submount 71 is an example of the “first side surface” in the present invention.

  Further, the side surface 71c (second side surface of the second heat sink) of the submount 71 on the arrow X2 direction side is outside of the inner side surface 21b that is the side surface of the lead 21 on the arrow X1 direction side in the horizontal direction (arrow X2 direction side). ). Further, the side surface 71c is disposed outside the outer surface 21c which is the side surface of the lead 21 on the arrow X2 direction side. Thus, the width W6 of the submount 71 in the directions of arrows X1 and X2 (direction orthogonal to the laser beam emission direction (arrow Z1 direction)) is made larger than the inner distance W4 between the lead 3 and the lead 21. Is possible.

  In addition, the submount 71 includes an electrode 71d, an electrode 71e, and an electrode 71f that are made of a Ti layer, a Pt layer, and an Au layer, and are electrically independent from each other, on a surface portion 71u on the upper side of the arrow Y1. . The surface portion 71u of the submount 71 is an example of the “second surface portion” in the present invention. The electrodes 71d and 71e are examples of the “first electrode” in the present invention, and the electrode 71f is an example of the “second electrode” in the present invention. The electrode 71d is connected to the front end portion 3a of the lead 3 by an Au wire 100. The electrode 71 e is connected to the front end portion 21 a of the lead 21 by the Au wire 100. Further, the electrode 71f is provided with a tungsten via 71g that brings the surface portion 71u on the arrow Y1 direction side, which is the upper surface of the submount 71, into a conductive state, and the surface portion on the arrow Y2 direction side, which is the back surface. Thereby, the electrode 71f and the header 6 are electrically connected. The submount 71 is configured to function as a heat sink for the semiconductor laser device 70.

  In the seventh embodiment, the monolithic two-wavelength semiconductor laser element unit 72 includes an infrared semiconductor laser element (not shown) that emits infrared light having a wavelength of about 780 nm and a red semiconductor that emits red light having a wavelength of about 650 nm. It consists of a laser element (not shown). In addition, the surface on the arrow Y2 direction side which is the back surface of the monolithic two-wavelength semiconductor laser element portion 72 is attached to the surface portion 71u on the arrow Y1 direction side which is the upper surface of the submount 71 (the surface including the electrodes 71d, 71e and 71f). It has been.

  Specifically, the infrared semiconductor laser element of the monolithic two-wavelength semiconductor laser element unit 72 includes one electrode (not shown) on the surface on the arrow Y2 direction side which is the back surface, and the red semiconductor laser element is One electrode is included on the back surface on the arrow Y2 direction side. The back side of the infrared semiconductor laser element is attached on the electrode 71d of the submount 71 via a conductive adhesive layer (not shown) such as AuSn solder, and the back side of the red semiconductor laser element is AuSn solder. It is attached on the electrode 71e through a conductive adhesive layer (not shown). Thereby, the back surface side of the infrared semiconductor laser element is electrically connected to the lead 3 via the electrode 71d and the wire 100, and the back surface side of the red semiconductor laser element is connected to the electrode 71e and the wire 100. The lead 21 is electrically connected.

  Further, the surface 72c in the arrow Y1 direction, which is the upper surface of the monolithic two-wavelength semiconductor laser element portion 72, includes a common electrode that becomes the other electrode of the infrared semiconductor laser element and the red semiconductor laser element. The monolithic two-wavelength semiconductor laser element portion 72 includes a light emitting surface 72a and a light reflecting surface 72b in the direction in which the resonator extends (in the directions of arrows Z1 and Z2). The light intensity of the infrared laser light and the red laser light emitted from the light emitting surface 72a in the Z1 direction is larger than the light intensity of each laser light emitted from the light reflecting surface 72b in the Z2 direction.

  Further, the surface 72c on the arrow Y1 direction side, which is the upper surface of the monolithic two-wavelength semiconductor laser element portion 72, is connected to the electrode 71f of the submount 71 by the Au wire 100. Thereby, the surface 72c side of the monolithic two-wavelength semiconductor laser element portion 72 is electrically connected to the lead 5, and the lead 5 is used as a cathode common for the infrared semiconductor laser element and the red semiconductor laser element.

  The remaining structure of the semiconductor laser device 70 according to the seventh embodiment is similar to that of the aforementioned second embodiment.

  In the seventh embodiment, as described above, by providing the monolithic two-wavelength semiconductor laser element portion 72, the semiconductor laser device 70 capable of emitting infrared light and red light can be radiated while achieving miniaturization. Can be suppressed, and high-speed response can be improved.

  In the seventh embodiment, the surface 72 c of the monolithic two-wavelength semiconductor laser element portion 72 and the electrode 71 f electrically connected to the lead 5 are connected by the Au wire 100. Thereby, the length of the Au wire 100 can be shortened compared with the case where the surface 72c of the semiconductor laser element part 72 and the base 2 are directly connected by the Au wire 100. As a result, since the inductance of the semiconductor laser device 70 can be reduced, high-speed response can be improved.

  The remaining effects of the seventh embodiment are similar to those of the aforementioned second embodiment.

(Eighth embodiment)
FIG. 14 is a plan view illustrating the structure of the semiconductor laser device according to the eighth embodiment of the invention. FIG. 15 is a side view for explaining the structure of the semiconductor laser device according to the eighth embodiment shown in FIG. FIG. 16 is a front view of the semiconductor laser device according to the eighth embodiment shown in FIG. 14 as viewed from the laser beam emission direction side. With reference to FIGS. 14 to 16, in the eighth embodiment, a semiconductor laser device 80 using a three-wavelength semiconductor laser element portion 83 will be described, unlike the second embodiment. The three-wavelength semiconductor laser element portion 83 is an example of the “semiconductor laser element portion” in the present invention. Moreover, in FIGS. 14-16, the same code | symbol is attached | subjected about the structure similar to 2nd Embodiment.

  In the semiconductor laser device 80 according to the eighth embodiment, as shown in FIGS. 14 to 16, the base 2, the leads 3, 5, 21 and 81 attached to the base 2 and electrically independent from each other, And an attached header 6. The semiconductor laser device 80 further includes a submount 82 made of aluminum nitride (AlN) attached to the header 6, and a three-wavelength semiconductor laser element portion 83 attached to the submount 82. The submount 82 is an example of the “second heat sink” in the present invention.

  Here, in the eighth embodiment, the lead 81 is metallic and is disposed so as to penetrate the base 2. The lead 81 is formed such that the front end portion 81a on the arrow Z1 direction (front) side protrudes from the surface 2a on the arrow Z1 direction (front) side of the base 2 to the arrow Z1 direction (front) side by a distance D1. ing. That is, the front end portion 3a of the lead 3, the front end portion 21a of the lead 21, and the front end portion 81a of the lead 81 are arranged on the same plane orthogonal to the laser beam emission direction (arrow Z1 direction). The lead 81 and the front end 81a are examples of the “second lead” and the “first front end” of the present invention, respectively.

  Further, as shown in FIG. 16, the leads 3, 5, 21 and 81 are arranged on a line segment constituting a predetermined circle 84 when viewed from the arrow Z1 direction (front side). Further, the center 84 a of the predetermined circle 84 is arranged so as to be shifted from the center 2 c of the base 2 in a direction away from the upper surface 6 a of the header 6 (in the direction of arrow Y 1). As a result, the leads 3, 21 and 81 can be separated as much as possible from the header 6 arranged on the arrow Y2 direction side. In addition, the lead 81 is covered with an insulator 500 made of glass at the penetrating portion of the base 2. Thereby, the lead 81 is electrically insulated from the base 2.

  In the eighth embodiment, the submount 82 has a rectangular parallelepiped shape, and the surface on the arrow Y1 direction side, which is the upper surface of the header 6, via a conductive adhesive layer (not shown) such as AuSn solder. The front surface 6a of the header 6 is electrically connected to the surface portion on the arrow Y2 direction side which is the back surface of the submount 82. Further, in the submount 82, the surface 82a on the arrow Z2 direction (rear) side is disposed on the arrow Z1 direction (front) side by a distance D7 from the surface 2a on the arrow Z1 direction (front) side of the base 2. The surface 82a of the submount 82 is an example of the “first rear end” in the present invention.

  Specifically, the submount 82 is disposed such that the distance D7 is larger than the distance D1. That is, the surface 82a on the arrow Z2 direction (rear) side of the submount 82 is disposed on the arrow Z1 direction (front) side of the front end portion 3a of the lead 3, the front end portion 21a of the lead 21, and the front end portion 81a of the lead 81. ing.

  Further, as shown in FIG. 14, the side surface 82b on the arrow X1 direction side of the submount 82 is on the outer side (arrow X1 direction side) of the inner surface 3b that is the side surface on the arrow X2 direction side of the lead 3 in the horizontal direction. Has been placed. Further, the side surface 82b is disposed outside the outer surface 3c which is the side surface of the lead 3 on the arrow X1 direction side in the horizontal direction. The side surface 82b on the arrow X1 direction side of the submount 82 is an example of the “first side surface” in the present invention.

  Further, the side surface 82c (second side surface of the second heat sink) of the submount 82 in the arrow X2 direction side is outside of the inner side surface 21b that is the side surface of the lead 21 in the arrow X1 direction side in the horizontal direction (arrow X2 direction side). ). Further, the side surface 82c is disposed outside the outer surface 21c that is the side surface of the lead 21 on the arrow X2 direction side. Accordingly, the width W7 of the submount 82 in the directions of arrows X1 and X2 (direction orthogonal to the laser beam emission direction (arrow Z1 direction)) is made larger than the inner distance W4 between the lead 3 and the lead 21. Is possible.

  Further, the submount 82 includes an electrode 82d made of a Ti layer, a Pt layer, and an Au layer on the surface portion 82u on the arrow Y1 direction side which is the upper surface. The surface portion 82u of the submount 82 is an example of the “second surface portion” in the present invention. Further, the electrode 82d is provided with a tungsten via 82e that brings the surface portion 82u on the arrow Y1 direction side, which is the upper surface of the submount 82, and the surface portion on the arrow Y2 direction side, which is the back surface, into a conductive state. Thereby, the electrode 82d and the header 6 are electrically connected. The submount 82 is configured to function as a heat sink for the semiconductor laser device 80.

  In the eighth embodiment, the three-wavelength semiconductor laser element unit 83 includes a blue-violet semiconductor laser element 85 that emits blue-violet light having a wavelength of about 405 nm and an infrared semiconductor laser element that emits infrared light having a wavelength of about 780 nm. 86 and a red semiconductor laser element 87 that emits red light having a wavelength of about 650 nm. The blue-violet semiconductor laser element 85 has a light emitting surface 85a and a light reflecting surface 85b in the direction in which the resonator extends (in the directions of arrows Z1 and Z2).

  The infrared semiconductor laser element 86 includes a light emitting surface 86a and a light reflecting surface 86b in the direction in which the resonator extends (in the directions of arrows Z1 and Z2). The red semiconductor laser element 87 includes a light emitting surface 87a and a light reflecting surface 87b in the direction in which the resonator extends (in the directions of arrows Z1 and Z2). The light intensity of each color laser beam emitted from the light emitting surfaces 85a, 86a and 87a of the semiconductor laser elements 85, 86 and 87 in the direction of the arrow Z1 is indicated by the arrow Z2 from the light reflecting surfaces 85b, 86b and 87b, respectively. It is larger than the light intensity of each color laser beam emitted in the direction.

The blue-violet semiconductor laser device 85 includes one electrode (not shown) on the back surface on the arrow Y2 direction side, and the back surface side of the blue-violet semiconductor laser device 85 has a conductive adhesive layer such as AuSn solder. It is mounted on the electrode 82d of the submount 82 via (not shown). Thereby, the back surface side of the blue-violet semiconductor laser element 85 is electrically connected to the header 6 via the electrode 82d and the tungsten via 82e. Further, the blue-violet semiconductor laser element 85 includes the other electrode (not shown) on the surface 85c on the arrow Y1 direction side which is the upper surface, and the surface 85c is made of SiO ₂ or the like with a predetermined interval. Insulating films 88 and 89 are formed.

  Furthermore, electrodes 88a and 89a that are electrically separated (insulated) from each other are formed on the surfaces of the insulating films 88 and 89 on the arrow Y2 direction side.

  The surface 85c on the arrow Y1 direction side, which is the upper surface of the blue-violet semiconductor laser element 85 exposed between the insulating films 88 and 89, is connected to the front end portion 81a of the lead 81 by the Au wire 100. Thereby, the surface 85c side of the blue-violet semiconductor laser element 85 is electrically connected to the lead 81.

  The infrared semiconductor laser element 86 includes one electrode (not shown) on the back surface on the arrow Y2 direction side, and the back surface side of the infrared semiconductor laser element 86 is a conductive adhesive layer such as AuSn solder. It is attached on the surface on the arrow Y1 direction side which is the upper surface of the electrode 88a via (not shown). Further, the electrode 88 a is connected to the front end portion 3 a of the lead 3 by the Au wire 100. Thereby, the back surface side of the infrared semiconductor laser element 86 is electrically connected to the lead 3.

  The infrared semiconductor laser element 86 includes the other electrode (not shown) on the surface 86c on the arrow Y1 direction side, which is the upper surface, and the surface 86c is connected to the electrode 82d of the submount 82 by the Au wire 100. It is connected. Thereby, the surface 86c side of the infrared semiconductor laser element 86 is electrically connected to the header 6 through the Au wire 100, the electrode 82d, and the tungsten via 82e.

  The red semiconductor laser element 87 includes one electrode (not shown) on the surface on the back side in the arrow Y2 direction, and the back side of the red semiconductor laser element 87 is a conductive adhesive layer such as AuSn solder. It is attached on the surface on the arrow Y1 direction side which is the upper surface of the electrode 89a via (not shown). The electrode 89 a is connected to the front end portion 21 a of the lead 21 by the Au wire 100. Thereby, the back surface side of the red semiconductor laser element 87 is electrically connected to the lead 3.

  The red semiconductor laser element 87 includes the other electrode (not shown) on the surface 87c on the arrow Y1 direction side which is the upper surface, and the surface 87c is connected to the electrode 82d of the submount 82 by the Au wire 100. Has been. Thereby, the surface 87c side of the red semiconductor laser element 87 is electrically connected to the header 6 through the Au wire 100, the electrode 82d, and the tungsten via 82e.

  Further, as described above, the rear surface side of the blue-violet semiconductor laser element 85, the front surface 86c side of the infrared semiconductor laser element 86, and the front surface 87c side of the red semiconductor laser element 87 are electrically connected to the header 6 via the electrode 82d. Further, the lead 5 is electrically connected via the base 2. As a result, the lead 5 is used as a cathode common for the blue-violet semiconductor laser element 85, the infrared semiconductor laser element 86, and the red semiconductor laser element 87.

  The remaining structure of the semiconductor laser device 80 according to the eighth embodiment is similar to that of the aforementioned second embodiment.

  In the eighth embodiment, as described above, by providing the three-wavelength semiconductor laser element portion 83, the semiconductor laser device 80 capable of emitting blue-violet light, infrared light, and red light is reduced in size. However, it can suppress that heat dissipation falls, and can improve high-speed response.

  In the eighth embodiment, the surface 86 c on the arrow Y 1 direction side which is the upper surface of the infrared semiconductor laser element 86, the surface 87 c on the arrow Y 1 direction side which is the upper surface of the red semiconductor laser element 87, and the leads 5 are electrically connected. The connected electrode 82d is connected by an Au wire 100. As a result, the length of the Au wire 100 can be shortened compared to the case where the surface 86 c of the infrared semiconductor laser element 86 and the surface 87 c of the red semiconductor laser element 87 and the base 2 are directly connected by the Au wire 100. . As a result, since the inductance of the semiconductor laser device 80 can be reduced, high-speed response can be improved.

  In the eighth embodiment, the front end portion 3a of the lead 3, the front end portion 21a of the lead 21, and the front end portion 81a of the lead 81 are each in the direction of arrow Z2 from the surface 82a on the arrow Z2 direction (rear) side of the submount 82 ( By arranging in the rear direction, the width W7 of the submount 82 can be increased outward (arrow X1 direction side). By configuring in this way, the volume of the submount 82 can be increased without increasing the size of the semiconductor laser device 80. Therefore, it is possible to suppress a reduction in heat dissipation while reducing the size.

  In the eighth embodiment, the front end 3a of the lead 3, the front end 21a of the lead 21, and the front end 81a of the lead 81, the blue-violet semiconductor laser element 85, the infrared semiconductor laser element 86, and the red semiconductor laser element 87 Are respectively connected via the Au wire 100, the semiconductor laser elements 85, 86 and 87 and the front end portions 3a, 21a and 81a of the leads 3, 21 and 81 can be easily connected. Furthermore, since each Au laser 100 can be connected by a short-length Au wire 100 as close as possible to the shortest distance from each semiconductor laser element 85, 86 and 87 to each lead 3, 21 and 81, the inductance of each Au wire 100 can be set respectively. Can be small. As a result, the inductance of the semiconductor laser device 80 is minimized, and high-speed response can be improved.

  In the eighth embodiment, the front end portion 3a of the lead 3, the front end portion 21a of the lead 21, and the front end portion 81a of the lead 81 are on the same plane perpendicular to the laser beam emission direction (arrow Z1 direction). Has been placed. Thus, unlike the case where the positions of the front end portion 3a of the lead 3, the front end portion 21a of the lead 21, and the front end portion 81a of the lead 81 are deviated from each other, the leads 3, 21 arranged in the front (arrow Z1 direction) and The position of the front end portion of any one of 81 does not limit the position of the surface 82a of the submount 82. As a result, since the surface 82a of the submount 82 can be expanded to the rear side (arrow Z2 direction side) as a whole, it is possible to further suppress a decrease in heat dissipation.

  The remaining effects of the eighth embodiment are similar to those of the aforementioned second embodiment.

(Ninth embodiment)
FIG. 17 is a plan view illustrating the structure of the semiconductor laser device according to the ninth embodiment of the invention. FIG. 18 is a side view for explaining the structure of the semiconductor laser device according to the ninth embodiment shown in FIG. 17 and 18, in the ninth embodiment, unlike the first embodiment, the front end portion 3a of the lead 3 on the arrow Z1 direction (front) side is the arrow Z1 direction (front) side of the base 2. A semiconductor laser device 90 arranged on the same plane as the surface 2a (so that the distance D1 shown in FIGS. 1 and 2 is zero) will be described. Moreover, in FIG. 17 and FIG. 18, the same code | symbol is attached | subjected about the structure similar to 1st Embodiment.

  In the semiconductor laser device 90 according to the ninth embodiment, as shown in FIGS. 17 and 18, the lead 3 has a front end 3 a on the arrow Z <b> 1 direction (front) side and a surface 2 a on the arrow Z <b> 1 direction (front) side of the base 2. Are arranged on substantially the same plane (so that the distance D1 shown in FIGS. 1 and 2 is zero). That is, the front end 3a of the lead 3 does not protrude from the surface 2a on the arrow Z1 direction (front) side of the base 2 to the arrow Z1 direction (front) side, and the surface of the submount 7 on the arrow Z2 direction (rear) side. 7a and a distance D3 between the surface 2a on the arrow Z1 direction (front) side of the base 2 and a distance D8 between the surface 7a on the arrow Z2 direction (rear) side of the submount 7 and the front end portion 3a of the lead 3. Is substantially the same distance.

  The remaining structure of the semiconductor laser device 90 according to the ninth embodiment is similar to that of the aforementioned first embodiment.

  In the ninth embodiment, as described above, the front end portion 3a on the arrow Z1 direction (front) side is disposed substantially on the same plane as the surface 2a on the arrow Z1 direction (front) side of the base 2, The surface 7a on the arrow Z2 direction (rear) side of the submount 7 can be further expanded rearward (arrow Z2 direction side). As a result, since the volume of the submount 7 can be increased, it is possible to further suppress the deterioration of heat dissipation.

  The remaining effects of the ninth embodiment are similar to those of the aforementioned first embodiment.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is shown not by the above description of the embodiments but by the scope of claims for patent, and further includes all modifications within the meaning and scope equivalent to the scope of claims for patent.

  For example, in the first to sixth embodiments and the ninth embodiment, the example using the semiconductor laser element portion on which the blue-violet semiconductor laser element is mounted is shown, but the present invention is not limited to this, and the monolithic two-wavelength semiconductor laser A multi-wavelength semiconductor laser element portion such as an element portion or a three-wavelength semiconductor laser element portion or a semiconductor laser element portion having a wavelength other than blue may be used. Further, the laser light emitted from the multi-wavelength semiconductor laser element portion may be a color other than infrared, red, and blue, or a combination thereof. For example, the laser light has a green semiconductor laser element instead of the infrared semiconductor laser element. A multiwavelength semiconductor laser element portion (having a combination of red, green, and blue) may be used.

  In the first to sixth embodiments and the ninth embodiment, the example in which three leads are provided has been described. However, the present invention is not limited to this, and two or more leads that are electrically independent from each other are provided. May be.

  In the first to ninth embodiments, the header 6 is attached to the surfaces 2a, 41a and 51a with respect to the bases 2, 41 and 51, and the lead 5 is provided on the surface opposite to the surfaces 2a, 41a and 51a. As a result, the packages including the bases 2, 41 and 51, the header 6 and the leads 5 are integrally formed, respectively. The present invention is not limited to this, and the header 6 is arranged on the surfaces 2a, 41a and 51a of the bases 2, 41 and 51 by press molding and the leads 5 are arranged on the surface opposite to the surfaces 2a, 41a and 51a. It may be integrally formed so that it does.

It is a top view for demonstrating the structure of the semiconductor laser apparatus by 1st Embodiment of this invention. It is a side view for demonstrating the structure of the semiconductor laser apparatus by 1st Embodiment shown in FIG. It is the front view which looked at the semiconductor laser device by 1st Embodiment shown in FIG. 1 from the emission direction side of the laser beam. It is a perspective view for demonstrating the structure of the semiconductor laser apparatus by 1st Embodiment shown in FIG. It is a top view for demonstrating the structure of the semiconductor laser apparatus by 2nd Embodiment of this invention. It is a side view for demonstrating the structure of the semiconductor laser apparatus by 2nd Embodiment shown in FIG. It is the front view which looked at the semiconductor laser apparatus by 2nd Embodiment shown in FIG. 5 from the emission direction side of the laser beam. It is a top view for demonstrating the structure of the semiconductor laser apparatus by 3rd Embodiment of this invention. It is the front view which looked at the semiconductor laser apparatus by 4th Embodiment of this invention from the emission direction side of the laser beam. It is the front view which looked at the semiconductor laser apparatus by 5th Embodiment of this invention from the emitting direction side of the laser beam. It is a side view for demonstrating the structure of the semiconductor laser apparatus by 6th Embodiment of this invention. It is a top view for demonstrating the structure of the semiconductor laser apparatus by 7th Embodiment of this invention. It is the front view which looked at the semiconductor laser apparatus by 7th Embodiment shown in FIG. 12 from the emitting direction side of the laser beam. It is a top view for demonstrating the structure of the semiconductor laser apparatus by 8th Embodiment of this invention. It is a side view for demonstrating the structure of the semiconductor laser apparatus by 8th Embodiment shown in FIG. It is the front view which looked at the semiconductor laser apparatus by 8th Embodiment shown in FIG. 14 from the emission direction side of the laser beam. It is a top view for demonstrating the structure of the semiconductor laser apparatus by 9th Embodiment of this invention. FIG. 18 is a side view for explaining the structure of the semiconductor laser device according to the ninth embodiment shown in FIG. 17;

Explanation of symbols

1, 20, 30, 40, 50, 60, 70, 80 Semiconductor laser device 2, 41, 51 Base (main part)
2c Center 3, 61 Lead (first lead)
3a, 61a Front end (first front end)
4a, 21a, 81a Front end (second front end)
3b Inside surface 4, 21, 81 Lead (second lead)
5 Lead (3rd lead)
6 Header (first heat sink)
6a Surface (first surface part)
7, 22, 31, 71, 82 Submount (second heat sink)
7a, 22a, 31a, 71a, 82a Surface (first rear end)
7b, 22b, 31b, 71b, 82b Side surface (first side surface)
7u, 22u, 31u, 71u, 82u Surface portion (second surface portion)
8 Semiconductor laser element portion 10, 84 Predetermined circle 10a, 84a Center 31d, 71d, 71e Electrode (first electrode)
31e, 71f Electrode (second electrode)
72 Monolithic two-wavelength semiconductor laser element (semiconductor laser element)
83 Three-wavelength semiconductor laser element part (semiconductor laser element part)

Claims (9)

A package including a main body and a first heat sink;
A second heat sink attached to the first surface portion of the first heat sink;
A semiconductor laser element portion attached to the second surface portion of the second heat sink;
A first lead attached through the third surface portion of the main body portion on which the first heat sink is disposed,
When the emission direction of the laser light from the semiconductor laser element portion is the front, the first front end portion of the first lead is disposed behind the first rear end portion of the second heat sink,
The semiconductor laser device, wherein the second surface portion electrically connected to the semiconductor laser element portion is electrically connected to the first front end portion.   The semiconductor laser device according to claim 1, wherein the second surface portion and the first front end portion are connected via a wire.   When the direction perpendicular to the laser beam emission direction and parallel to the first surface portion is a horizontal direction, the first side surface of the second heat sink is more than the inner side surface of the first lead in the horizontal direction. The semiconductor laser device according to claim 1, wherein the semiconductor laser device is disposed outside. A second lead attached through the third surface portion and electrically independent from the first lead;
The second front end is disposed rearward of the first rear end,
The semiconductor laser device according to claim 1, wherein the semiconductor laser element portion is electrically connected to the second front end portion. The second surface portion includes a first electrode and a second electrode that are electrically independent from each other;
The first electrode is electrically connected to the back side of the semiconductor laser element portion,
The said 2nd electrode is electrically connected with the said 2nd front-end part while being electrically connected with the surface side on the opposite side to the said back surface side of the said semiconductor laser element part. Semiconductor laser device. A second lead attached through the third surface portion and electrically independent from the first lead;
The semiconductor laser device according to claim 1, wherein the second front end portion is disposed in front of the first rear end portion.   The semiconductor laser device according to claim 4, wherein the semiconductor laser element part and the second front end part are connected via a wire. The main body has a substantially circular outer shape when viewed from the emission direction side of the laser beam,
The package further includes a third lead disposed on the main body and electrically independent from the first lead and the second lead,
The first lead, the second lead, and the third lead are disposed on a line segment that constitutes a predetermined circle when viewed from the laser beam emitting direction side,
8. The semiconductor laser device according to claim 4, wherein a center of the predetermined circle is arranged so as to be shifted from a center of the main body in a direction away from the first heat sink.   When the direction perpendicular to the laser beam emission direction and parallel to the first surface portion is defined as the horizontal direction, the width of the first heat sink in the horizontal direction is the width between the first lead and the second lead. The semiconductor laser device according to claim 4, wherein the semiconductor laser device is larger than an inner interval therebetween.

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