JP5216807B2 - Semiconductor laser device - Google Patents

Description

  The present invention relates to a semiconductor laser device.

  In recent years, as the performance of personal computers and multimedia devices has increased, the amount of information to be processed has increased remarkably. As the amount of information increases, an optical recording medium and a driving device for the same have been developed to cope with an increase in capacity and speed of information processing.

  In particular, in an optical recording medium driving device such as a CD-R (compact disc-recordable) drive, an MO (magnet optic) drive, a DVD (digital versatile disc) drive capable of reading and writing to an optical recording medium, A semiconductor laser device is used.

For example, in the light emitting device disclosed in Patent Document 1, a plurality of pins having conductivity are provided on a support that supports a semiconductor laser element. The plurality of pins are connected to the n-side electrode and the p-side electrode of each semiconductor laser element through wires. As a result, when a voltage is applied between the n-side electrode and the p-side electrode of each semiconductor laser element, a current is injected into the active layer formed in each semiconductor laser element, and the holes and electrons are regenerated. Light emission occurs by the combination.
JP 2001-230502 A

  However, in the above light emitting device, the n-side electrode of the red semiconductor laser element that emits red light and the n-side electrode of the infrared semiconductor laser element that emits infrared light are common, and the red semiconductor laser element Since the p-side electrode and the n-side electrode of the blue-violet semiconductor laser element that emits blue-violet light are common, each of the red semiconductor laser element, the infrared semiconductor laser element, and the blue-violet semiconductor laser element has It is difficult to apply an arbitrary voltage independently.

  An object of the present invention is to provide a semiconductor laser device including a plurality of semiconductor laser elements and capable of independently applying a voltage to electrodes of the plurality of semiconductor laser elements.

  A semiconductor laser device according to a first aspect of the present invention includes a conductive casing, a conductive pedestal provided in the casing, and first, second, and third provided in the casing and insulated from the casing. A terminal, a fourth terminal provided on the housing and electrically connected to the pedestal, and first, second and third semiconductor laser elements provided on the pedestal and each having one electrode. The first terminal and the second terminal are disposed along the first direction, and the third terminal and the fourth terminal are disposed along the second direction intersecting the first direction, In the first, second and third semiconductor laser elements, one electrode of the first semiconductor laser element is closer to the first terminal than one electrode of the second and third semiconductor laser elements, and the second semiconductor laser One electrode of the element is at the second end than one electrode of the first and third semiconductor laser elements And at least part of one electrode of the third semiconductor laser element is disposed between the one electrode of the first semiconductor laser element and the one electrode of the second semiconductor laser element in the first direction. The first terminal and one electrode of the first semiconductor laser element are connected by a first wire, the second terminal and one electrode of the second semiconductor laser element are connected by a second wire, The third terminal and one electrode of the third semiconductor laser element are connected by a third wire, and the third semiconductor laser element further has the other electrode electrically connected to the pedestal.

  In the semiconductor laser device according to the present invention, the first terminal and the one electrode of the first semiconductor laser element are connected by the first wire, and the second terminal and the one electrode of the second semiconductor laser element are connected. Connected by the second wire, and the third terminal and one electrode of the third semiconductor laser element are connected by the third wire, whereby the first semiconductor laser element, the second semiconductor laser element, and the second semiconductor laser element The three semiconductor laser elements can be driven independently.

  In addition, since one electrode of the first semiconductor laser element is located closer to the first terminal than one electrode of the second and third semiconductor laser elements, the first electrode of the first semiconductor laser element and the first electrode The terminal can be simply and easily connected by the first wire. Since one electrode of the second semiconductor laser element is located closer to the second terminal than one electrode of the first and third semiconductor laser elements, the one electrode and the second terminal of the second semiconductor laser element are Can be simply and easily connected by the second wire. Since at least a part of the one electrode of the third semiconductor laser element is located between the one electrode of the first semiconductor laser element and the one electrode of the second semiconductor laser element in the first direction, the third semiconductor One electrode of the laser element and the third terminal can be simply and easily connected by the third wire.

  The first semiconductor laser element and the second semiconductor laser element are preferably provided on the third semiconductor laser element. In this case, the interval between the laser beams of the first, second, and third semiconductor laser elements can be reduced.

  The third semiconductor laser element has a ridge portion formed on one electrode side of the third semiconductor laser element and an insulating film formed on a side surface of the ridge portion, and the ridge portion is formed by the first semiconductor laser. It may be provided between the element and the second semiconductor laser element. In this case, the one electrode of the third semiconductor laser element and the third terminal can be more simply and easily connected by the third wire.

  The first connection position between the first wire and one electrode of the first semiconductor laser element, the third connection position between the third wire and one electrode of the third semiconductor laser element, and the second wire and the first wire It is preferable that the second connection position with the one electrode of the two semiconductor laser elements is sequentially arranged from the first terminal side to the second terminal side in the first direction. This prevents the first, second and third wires from intersecting.

  The third connection position may be set on the opposite side of the laser beam emission side of the first, second, and third semiconductor laser elements from at least one of the first and second connection positions. Good. Thereby, since the inductance component of the third wire is reduced, the third semiconductor laser element can be driven at high speed.

  The first, second, and third terminals extend from one side to the other along a third direction that intersects the first direction and the second direction, and the first, second, and third semiconductor lasers The element is arranged so as to emit main laser light to the other side along the third direction, and the first and second semiconductor laser elements each further include the other electrode, and the first connection position is higher than the first connection position. The other electrode of the first semiconductor laser element may be electrically connected to the pedestal by a fourth wire at a position on the laser beam emission side of the one semiconductor laser element. In this case, the other electrode of the first semiconductor laser element and the other electrode of the third semiconductor laser element can be commonly connected to the base by the fourth wire.

  The second electrode of the second semiconductor laser element may be electrically connected to the pedestal by a fifth wire at a position closer to the laser beam emission side of the second semiconductor laser element than the second connection position. In this case, the other electrode of the second semiconductor laser element and the other electrode of the third semiconductor laser element can be commonly connected to the base by the fifth wire.

  A semiconductor laser device according to a second aspect of the present invention includes a conductive casing, a conductive pedestal provided in the casing, and first, second, and third provided in the casing and insulated from the casing. A terminal, a fourth terminal provided on the housing and electrically connected to the pedestal, and first, second and third semiconductor laser elements provided on the pedestal and each having one electrode. The first terminal and the second terminal are disposed along the first direction, and the third terminal and the fourth terminal are disposed along the second direction intersecting the first direction, In the first, second and third semiconductor laser elements, one electrode of the first semiconductor laser element is closer to the first terminal than one electrode of the second and third semiconductor laser elements, and the second semiconductor laser One electrode of the element is at the second end than one electrode of the first and third semiconductor laser elements , A submount is further provided between the one electrode of the third semiconductor laser element and the pedestal, and the one electrode of the third semiconductor laser element protrudes from the third semiconductor laser element on the submount. The first terminal and one electrode of the first semiconductor laser element are connected by a first wire, and the second terminal and one electrode of the second semiconductor laser element are connected by a second wire. The third terminal and one electrode of the third semiconductor laser element are connected by a third wire on the submount, and the third semiconductor laser element further has the other electrode electrically connected to the pedestal. Is.

  In the semiconductor laser device according to the present invention, the first terminal and the one electrode of the first semiconductor laser element are connected by the first wire, and the second terminal and the one electrode of the second semiconductor laser element are connected. Connected by the second wire, and the third terminal and one electrode of the third semiconductor laser element are connected by the third wire, whereby the first semiconductor laser element, the second semiconductor laser element, and the second semiconductor laser element The three semiconductor laser elements can be driven independently.

  In addition, since one electrode of the first semiconductor laser element is located closer to the first terminal than one electrode of the second and third semiconductor laser elements, the first electrode of the first semiconductor laser element and the first electrode The terminal can be simply and easily connected by the first wire. Since one electrode of the second semiconductor laser element is located closer to the second terminal than one electrode of the first and third semiconductor laser elements, the one electrode and the second terminal of the second semiconductor laser element are Can be simply and easily connected by the second wire. Since one electrode of the third semiconductor laser element is formed on the submount so as to protrude from the third semiconductor laser element, the one electrode and the third terminal of the third semiconductor laser element are connected to the submount. Can be connected simply and easily by the third wire.

  It is preferable that at least a part of one electrode of the third semiconductor laser element is closer to the third terminal than one electrode of the first and second semiconductor laser elements. Thereby, the one electrode of the third semiconductor laser element and the third terminal can be more simply and easily connected by the third wire.

  The first semiconductor laser element and the second semiconductor laser element are preferably provided on the third semiconductor laser element. In this case, the interval between the laser beams of the first, second, and third semiconductor laser elements can be reduced.

  The first connection position between the first wire and one electrode of the first semiconductor laser element, the third connection position between the third wire and one electrode of the third semiconductor laser element, and the second wire and the first wire It is preferable that the second connection position with the one electrode of the two semiconductor laser elements is sequentially arranged from the first terminal side to the second terminal side in the first direction. This prevents the first, second and third wires from intersecting.

  The third connection position may be set on the opposite side of the laser beam emission side of the first, second, and third semiconductor laser elements from at least one of the first and second connection positions. Good. Thereby, since the inductance component of the third wire is reduced, the third semiconductor laser element can be driven at high speed.

  The first, second, and third terminals extend from one side to the other along a third direction that intersects the first direction and the second direction, and the first, second, and third semiconductor lasers The element is arranged to emit main laser light to the other side along the third direction, and the first and second semiconductor laser elements each further include the other electrode, and the first, second, and third elements The other electrode of the semiconductor laser element is electrically connected to each other, and the other electrode of the third semiconductor laser element is the fourth electrode at a position closer to the laser beam emission side of the first semiconductor laser element than the first connection position. It may be electrically connected to the pedestal by a wire.

  In this case, since the other electrodes of the first, second, and third semiconductor laser elements are electrically connected to each other, the other electrodes of the first, second, and third semiconductor laser elements are connected by the fourth wire. Can be commonly connected to the pedestal.

  A semiconductor laser device according to a third aspect of the present invention includes a conductive casing, a conductive pedestal provided in the casing, and first, second, and third provided in the casing and insulated from the casing. A terminal, a fourth terminal provided on the housing and electrically connected to the pedestal, and first, second and third semiconductor laser elements provided on the pedestal and each having one electrode. The first terminal and the second terminal are disposed along the first direction, and the third terminal and the fourth terminal are disposed along the second direction intersecting the first direction, The light emitting part of the first semiconductor laser element, the light emitting part of the third semiconductor laser element, and the light emitting part of the second semiconductor laser element are arranged in order from the first terminal side to the second terminal side in the first direction. The one electrode of the third semiconductor laser element is the second electrode on the second terminal side in the first direction. Extends to a position closer to the second terminal than the side surface of the semiconductor laser element, the first terminal and one electrode of the first semiconductor laser element are connected by the first wire, and the second terminal and the third terminal One electrode of the semiconductor laser element is connected by a third wire, the third terminal and one electrode of the second semiconductor laser element are connected by a second wire, and the third semiconductor laser element is And a laser beam having a wavelength shorter than that of the second semiconductor laser element, and further having the other electrode electrically connected to the pedestal.

  In the semiconductor laser device according to the present invention, the light emitting portion of the third semiconductor laser element that emits laser light having a shorter wavelength than the first and second semiconductor laser elements is the first semiconductor laser in the first direction. By providing between the light emitting part of the element and the light emitting part of the second semiconductor laser element, the third semiconductor laser element is located in the central part of the housing. Thereby, when condensing a laser beam with a lens etc., the utilization efficiency of the light by the light emission part of a 3rd semiconductor laser element can be improved, for example.

  In addition, the first electrode of the third semiconductor laser element extends to a position closer to the second terminal than the side surface of the second semiconductor laser element on the second terminal side in the first direction. And the length of the 3rd wire which connects one electrode and the 2nd terminal of the 3rd semiconductor laser element which radiate | emits a laser beam with a shorter wavelength than a 2nd semiconductor laser element can be shortened. Thereby, since the inductance component of the third wire is reduced, the third semiconductor laser element can be driven at high speed.

  Further, the one electrode of the first semiconductor laser element and the first terminal can be simply and easily connected by the first wire, and the one electrode of the third semiconductor laser element and the second terminal are connected to the first terminal. The three wires can be simply and easily connected, and the one electrode of the second semiconductor laser element and the third terminal can be simply and easily connected by the second wire.

  The first, second, and third terminals extend from one side to the other along a third direction that intersects the first direction and the second direction, and the first, second, and third semiconductor lasers The element is arranged to emit main laser light to the other side along the third direction, and the first and second semiconductor laser elements each further include the other electrode, and the first wire and the first wire The other electrode of the first semiconductor laser element is electrically connected to the pedestal by the fourth wire at a position closer to the laser beam emission side of the first semiconductor laser element than the first connection position with the one electrode of the semiconductor laser element. May be connected.

  In this case, the other electrode of the first semiconductor laser element and the other electrode of the third semiconductor laser element can be commonly connected to the base by the fourth wire.

  The second electrode of the second semiconductor laser element is positioned at a position closer to the laser beam emission side of the second semiconductor laser element than the second connection position between the second wire and one electrode of the second semiconductor laser element. 5 may be electrically connected to the base.

  In this case, the other electrode of the second semiconductor laser element and the other electrode of the third semiconductor laser element can be commonly connected to the base by the fifth wire.

  The second connection position is greater than the first connection position and the third connection position between the third wire and the one electrode of the third semiconductor laser element than the first connection position. The semiconductor laser element 3 may be set on the opposite side to the laser beam emission side. Thereby, since the inductance component of the third wire is reduced, the third semiconductor laser element can be driven at high speed.

  When the first, second, and third semiconductor laser elements are viewed in the second direction, it is preferable that the first, second, third, and fourth wires do not intersect each other. Thereby, wiring of electrodes, terminals and pedestals is simple and easy.

  The third semiconductor laser element may include an active layer made of a nitride semiconductor. In this case, blue-violet light is emitted from the active layer of the third semiconductor laser element.

  The length of the third terminal is shorter than the length of the first and second terminals, and the first, second, and third terminals are in a third direction that intersects the first direction and the second direction. The first, second, and third semiconductor laser elements are arranged so as to emit main laser light to the other side along the third direction. The second and third semiconductor laser elements are disposed between the first terminal and the second terminal in the first direction, and the length of the third terminal is the first and second in the third direction. Alternatively, the third semiconductor laser element may be set so as not to overlap with the end surface opposite to the laser beam emission side. Thereby, the first, second and third semiconductor laser elements can be easily attached to the base without being obstructed by the third terminal.

  A semiconductor laser device according to a fourth aspect of the present invention includes a conductive casing, a conductive pedestal provided in the casing, and first and second terminals provided in the casing and insulated from the casing. And a first semiconductor laser element provided on the base and having one electrode and the other electrode, respectively, the first semiconductor laser element being provided on the second semiconductor laser element, The terminal and the second terminal are arranged along the first direction, the first terminal and one electrode of the first semiconductor laser element are connected by the first wire, and the second terminal and the second terminal One electrode of the semiconductor laser element is connected by a second wire, and at least one other electrode of the first and second semiconductor laser elements is electrically connected to the base by a wire on the base side.

  In the semiconductor laser device according to the present invention, the first terminal and the one electrode of the first semiconductor laser element are connected by the first wire, and the second terminal and the one electrode of the second semiconductor laser element are connected. The first semiconductor laser element and the second semiconductor laser element can be independently driven by being connected by the second wire.

  The first semiconductor laser element is preferably provided on the second semiconductor laser element at a position closer to the first terminal than the second terminal. In this case, the first electrode and the first terminal of the first semiconductor laser element can be simply and easily connected by the first wire, and the first wire and the second wire cross each other. Is prevented.

  The second semiconductor laser element may include an active layer made of a nitride semiconductor. In this case, blue-violet light is emitted from the active layer of the second semiconductor laser element.

  The first semiconductor laser than the first connection position between the first wire and one electrode of the first semiconductor laser element or the second connection position between the second wire and one electrode of the second semiconductor laser element. At the position on the laser beam emission side of the element, at least one other electrode of the first and second semiconductor laser elements may be electrically connected to the pedestal by a wire on the pedestal side. In this case, the pedestal side wire is prevented from crossing the first wire and the second wire, respectively.

  According to the first to third inventions, the first semiconductor laser element, the second semiconductor laser element, and the third semiconductor laser element can be driven independently, and the first to third semiconductor lasers can be driven independently. Each one electrode and each terminal of the element can be simply and easily connected by a wire.

  According to the fourth aspect of the invention, the first semiconductor laser element and the second semiconductor laser element can be independently driven, and each one electrode and each terminal of the first and second semiconductor laser elements. Can be simply and easily connected to each other by a wire.

  Hereinafter, the semiconductor laser device according to the present embodiment will be described with reference to the drawings.

(First reference form)
FIG. 1 is a schematic cross-sectional view showing an example of a semiconductor laser device according to a first reference embodiment.

The semiconductor laser device 100 according to this reference embodiment includes a semiconductor laser device emitting a laser beam having a wavelength of about 650 nm (hereinafter, referred to as a red semiconductor laser element.) 1, a semiconductor laser device emitting a laser beam having a wavelength of about 780 nm ( (Hereinafter referred to as an infrared semiconductor laser element) 2 and a semiconductor laser element (hereinafter referred to as a blue-violet semiconductor laser element) 3 that emits laser light having a wavelength of about 400 nm. The blue-violet semiconductor laser device 3 includes an active layer (not shown) made of a nitride semiconductor.

In this reference embodiment, the blue-violet semiconductor laser device 3 is manufactured by forming a semiconductor layer on a GaN substrate. The red semiconductor laser device 1 and the infrared semiconductor laser device 2 are manufactured by forming a semiconductor layer on a GaAs substrate.

  As shown in FIG. 1, the blue-violet semiconductor laser device 3 has a striped ridge portion Ri on the upper surface side. An insulating film 4 is formed on both sides of the ridge portion Ri of the blue-violet semiconductor laser device 3, a p-electrode 32 is formed so as to cover the upper surface of the ridge portion Ri, and an n-electrode 35 is formed on the lower surface. The blue-violet semiconductor laser element 3 is formed with a pn junction surface 30 that is a junction surface between a p-type semiconductor and an n-type semiconductor.

  An n-electrode 13 is formed on the upper surface of the red semiconductor laser element 1, and a p-electrode 12 is formed on the lower surface. The red semiconductor laser element 1 has a pn junction surface 10 which is a junction surface between a p-type semiconductor and an n-type semiconductor.

  An n-electrode 23 is formed on the upper surface of the infrared semiconductor laser element 2, and a p-electrode 22 is formed on the lower surface. The infrared semiconductor laser element 2 has a pn junction surface 20 that is a junction surface between a p-type semiconductor and an n-type semiconductor.

  P-type pad electrodes 12 a and 22 a are formed on the insulating film 4 of the blue-violet semiconductor laser element 3 so as to be separated from the p-electrode 32.

  Solder films H are formed on the upper surfaces of the p-type pad electrodes 12a and 22a, respectively. The p-electrode 12 of the red semiconductor laser element 1 is bonded onto the p-type pad electrode 12a through the solder film H. Further, the p-electrode 22 of the infrared semiconductor laser element 2 is bonded to the p-type pad electrode 22a through the solder film H.

  Thereby, the p electrode 12 and the p-type pad electrode 12a of the red semiconductor laser element 1 are electrically connected, and the p electrode 22 and the p-type pad electrode 22a of the infrared semiconductor laser element 2 are electrically connected. .

  In FIG. 1, three directions orthogonal to each other as indicated by arrows X, Y, and Z are defined as an X direction, a Y direction, and a Z direction. The X direction and the Y direction are directions parallel to the pn junction surfaces 30, 10, and 20 of the blue-violet semiconductor laser element 3, the red semiconductor laser element 1, and the infrared semiconductor laser element 2. The Z direction is a direction perpendicular to the pn junction surfaces 30, 10, and 20 of the blue-violet semiconductor laser element 3, the red semiconductor laser element 1, and the infrared semiconductor laser element 2.

  The red semiconductor laser element 1, the infrared semiconductor laser element 2, and the blue-violet semiconductor laser element 3 are arranged so as to emit main laser light on one side along the X direction.

  By applying a voltage between the p-electrode 32 and the n-electrode 35 of the blue-violet semiconductor laser element 3, a region below the ridge Ri in the pn junction surface 30 (hereinafter referred to as a blue-violet emission point) 31. Laser beam having a wavelength of about 400 nm is emitted in the X direction.

  By applying a voltage between the p electrode 12 and the n electrode 13 of the red semiconductor laser element 1, a laser having a wavelength of about 650 nm from a predetermined region (hereinafter referred to as a red light emitting point) 11 in the pn junction surface 10 is used. Light is emitted in the X direction.

  By applying a voltage between the p-electrode 22 and the n-electrode 23 of the infrared semiconductor laser element 2, a wavelength of about 780 nm from a predetermined region (hereinafter referred to as infrared emission point) 21 in the pn junction surface 20 is obtained. Laser beam is emitted in the X direction.

  2A is a schematic cross-sectional view when the semiconductor laser device 100 of FIG. 1 is assembled on the pedestal, and FIG. 2B is a view when the semiconductor laser device 100 of FIG. 1 is assembled on the pedestal. FIG.

  When the semiconductor laser device 100 of FIG. 1 is used for an optical pickup device, as shown in FIG. 2A, the semiconductor laser device 100 is mounted on a conductive pedestal 500 made of a metal such as Cu, CuW or Al. Then, the p electrodes 32, 12a, 22a and the n electrodes 13, 23 are wired using the wires 3W, 1Wa, 1Wb, 2Wa, 2Wb.

  In this case, the n-electrode 35 is bonded to the upper surface of the pedestal 500. Thereby, the n electrode 35 and the base 500 are electrically connected.

  The n-electrode 13 of the red semiconductor laser element 1 is electrically connected to the upper surface of the pedestal 500 by the wire 1Wb. The n-electrode 23 of the infrared semiconductor laser element 2 is electrically connected to the pedestal 500 by the wire 2Wb.

  As a result, the pedestal 500 becomes a common n-electrode for the blue-violet semiconductor laser element 3, the red semiconductor laser element 1, and the infrared semiconductor laser element 2, and a cathode common connection can be realized.

  A pedestal 500 to which the semiconductor laser device 100 is attached is provided on a conductive stem 501.

  The stem 501 is provided with a first terminal 1P, a second terminal 2P, a third terminal 3P, and a fourth terminal 4P. The length of the third terminal 3P is shorter than the length of the first terminal 1P and the second terminal 2P.

  The first terminal 1P is insulated from the stem 501 by the insulating ring 1I, the second terminal 2P is insulated from the stem 501 by the insulating ring 2I, and the third terminal 3P is insulated from the stem 501 by the insulating ring 3I. ing. The fourth terminal 4P is provided in the pedestal 500 and is electrically connected to the pedestal 500.

  The first terminal 1P and the second terminal 2P are arranged along the Y direction, and the third terminal 3P and the fourth terminal 4P are arranged along the Z direction intersecting with the Y direction. The first terminal 1P, the second terminal 2P, and the third terminal 3P extend from one side to the other side along the X direction.

  The red semiconductor laser element 1, the infrared semiconductor laser element 2, and the blue-violet semiconductor laser element 3 are disposed between the first terminal 1P and the second terminal 2P in the Y direction.

  The length of the third terminal 3P overlaps with the end surface opposite to the emission side of the main laser beam emission surface of the red semiconductor laser element 1, the infrared semiconductor laser element 2, and the blue-violet semiconductor laser element 3 in the X direction. It is set not to be.

  Here, the end face from which the main laser beam is emitted refers to the end face (hereinafter referred to as the emission-side end face) having a larger amount of emitted light than the opposite end face.

  Here, the positional relationship among the p-type pad electrode 12a, the p-type pad electrode 22a, the p-electrode 32 of the blue-violet semiconductor laser element 3, and the first terminal 1P, the second terminal 2P, and the third terminal 3P will be described. To do.

  The p-type pad electrode 12a is closer to the first terminal 1P than the p-type pad electrode 22a and the p-electrode 32 of the blue-violet semiconductor laser element 3, and the p-type pad electrode 22a is closer to the p-type pad electrode 12a and the blue-violet semiconductor laser element 3 Red semiconductor so that the p-electrode 32 of the blue-violet semiconductor laser element 3 is located between the p-type pad electrode 12a and the p-type pad electrode 22a in the Y direction, closer to the second terminal 2P than the p-electrode 32 of Laser element 1, infrared semiconductor laser element 2 and blue-violet semiconductor laser element 3 are respectively arranged.

  Thereby, as shown in FIG. 2B, the first terminal 1P and the p-type pad electrode 12a are simply and easily connected by the wire 1Wa, and the second terminal 2P and the p-type pad electrode 22a are connected by the wire. The second terminal 3P and the p-electrode 32 of the blue-violet semiconductor laser device 3 are simply and easily connected by the wire 3W.

  Further, when the red semiconductor laser element 1, the infrared semiconductor laser element 2, and the blue-violet semiconductor laser element 3 are viewed in the Z direction, the wires 1Wa, 2Wa, 3W, 1Wb, and 2Wb do not intersect each other.

As described above, in the present reference, pedestal 500 and between the wire 3W voltage can drive a blue-violet semiconductor laser element 3 by applying a voltage between the base 500 and the wire 1Wa Can be driven, and the infrared semiconductor laser device 2 can be driven by applying a voltage between the base 500 and the wire 2Wa.

  Thus, the blue-violet semiconductor laser element 3, the red semiconductor laser element 1, and the infrared semiconductor laser element 2 can be driven independently.

  The blue-violet emission point 31 of the blue-violet semiconductor laser element 3 that emits laser light having a shorter wavelength than the red semiconductor laser element 1 and the infrared semiconductor laser element 2 is the red emission point of the red semiconductor laser element 1 in the Y direction. 11 and the infrared emission point 21 of the infrared semiconductor laser element 2, the blue-violet semiconductor laser element 3 can be easily provided at the center of the lens when used in an optical device such as an optical pickup device. Can be positioned.

  As a result, it is possible to reduce the influence of the circumferential difference in the peripheral portion of the lens and improve the light use efficiency by the blue-violet semiconductor laser element 3.

  Further, the connection position between the wire 1 Wa and the p-type pad electrode 12 a of the red semiconductor laser element 1, the connection position between the wire 3 W and the p electrode 32 of the blue-violet semiconductor laser element 3, and the p of the wire 2 Wa and the infrared semiconductor laser element 2. It is preferable that the connection positions with the mold pad electrode 22a are arranged in order from the first terminal 1P side to the second terminal 2P side in the Y direction. This prevents the wires 1Wa, 2Wa, and 3W from intersecting.

  The length of the third terminal 3P is shorter than the length of the first terminal 1P and the second terminal 2P, and the red semiconductor laser element 1, the infrared semiconductor laser element 2, and the blue-violet semiconductor laser element 3 are The third terminal 3P is arranged between the first terminal 1P and the second terminal 2P in the Y direction, and the length of the third terminal 3P is the red semiconductor laser element 1, the infrared semiconductor laser element 2, and the blue-violet semiconductor in the X direction. By setting the laser element 3 so as not to overlap the end face opposite to the laser light emission side end face, the p-electrode 32 and the third terminal 3P of the blue-violet semiconductor laser element 3 are simply and easily connected by the wire 3W. Can be connected to.

  Further, the connection position between the p-electrode 32 of the blue-violet semiconductor laser element 3 and the third terminal 3P is the connection position between the p-type pad electrode 12a of the red semiconductor laser element 1 and the first terminal 1P and the infrared semiconductor laser. The laser beam of the red semiconductor laser element 1, the infrared semiconductor laser element 2, and the blue-violet semiconductor laser element 3 is at least one of the connection positions of the p-type pad electrode 22a of the element 2 and the second terminal 2P. It is preferable to set the side opposite to the emission side. Thereby, the wire 3W can be shortened, and the inductance component of the wire 3W can be reduced, so that the blue-violet semiconductor laser device 3 can be driven at high speed.

  The first terminal 1P, the second terminal 2P, the third terminal 3P, and the fourth terminal 4P are preferably provided concentrically on the stem 501 as shown in FIG. . This prevents the wires connecting the semiconductor laser elements and the terminals from crossing each other.

  The positions where the red semiconductor laser element 1 and the infrared semiconductor laser element 2 are provided may be reversed.

  The red semiconductor laser element 1 and the infrared semiconductor laser element 2 may have a monolithic structure.

  Further, a submount made of silicon carbide, aluminum nitride, or the like may be provided between the blue-violet semiconductor laser element 3 and the pedestal 500. In this case, heat radiation of the blue semiconductor laser element 3 can be realized.

(Second Embodiment)
FIG. 3 is a schematic cross-sectional view showing an example of a semiconductor laser device according to the second embodiment. 4A is a schematic cross-sectional view when the semiconductor laser device of FIG. 3 is assembled on the pedestal, and FIG. 4B is an upper surface when the semiconductor laser device of FIG. 3 is assembled on the pedestal. FIG.

The semiconductor laser device 200 according to the present embodiment is different from the semiconductor laser device 100 according to the first reference embodiment in the following points.

  As shown in FIG. 3, in the semiconductor laser device 200 according to the present embodiment, the p-electrode 32 of the blue-violet semiconductor laser element 3 has a side surface of the infrared semiconductor laser element 2 on the second terminal 2P side in the Y direction. Rather than the second terminal 2P.

  A p-type pad electrode 22a is formed on the p-electrode 32 via an insulating film 4b, and the infrared semiconductor laser device 2 is formed on the p-type pad electrode 22a via a solder film H.

  Further, as shown in FIGS. 4A and 4B, the p-type pad electrode 22a of the infrared semiconductor laser element 2 and the third terminal 3P are connected by the wire 2Wa, and the p-type of the blue-violet semiconductor laser element 3 is connected. The electrode 32 and the second terminal 2P are connected by a wire 3W.

  As described above, in the present embodiment, the blue-violet semiconductor laser device 3 can be driven by applying a voltage between the base 500 and the wire 3W, and the voltage between the base 500 and the wire 1Wa. Can be driven, and the infrared semiconductor laser device 2 can be driven by applying a voltage between the base 500 and the wire 2Wa.

  Thus, the blue-violet semiconductor laser element 3, the red semiconductor laser element 1, and the infrared semiconductor laser element 2 can be driven independently.

  The blue-violet emission point 31 of the blue-violet semiconductor laser element 3 that emits laser light having a shorter wavelength than the red semiconductor laser element 1 and the infrared semiconductor laser element 2 is the red emission point of the red semiconductor laser element 1 in the Y direction. 11 and the infrared emission point 21 of the infrared semiconductor laser element 2, the blue-violet semiconductor laser element 3 can be easily provided at the center of the lens when used in an optical device such as an optical pickup device. Can be positioned.

  As a result, it is possible to reduce the influence of the circumferential difference in the peripheral portion of the lens and improve the light use efficiency by the blue-violet semiconductor laser element 3.

  Further, the p-electrode 32 of the blue-violet semiconductor laser element 3 extends to a position closer to the second terminal 2P than the side surface of the infrared semiconductor laser element 2 on the second terminal 2P side in the Y direction. To shorten the length of the wire 3W that connects the p-electrode 32 and the second terminal 2P of the blue-violet semiconductor laser element 3 that emits laser light having a shorter wavelength than the semiconductor laser element 1 and the infrared semiconductor laser element 2 Can do. Thereby, since the inductance component of the wire 3W becomes small, the blue-violet semiconductor laser element 3 can be driven at high speed.

  Further, the p-type pad electrode 12a of the red semiconductor laser element 1 and the first terminal 1P can be simply and easily connected by the wire 1Wa, and the p-electrode 32 and the second terminal 2P of the blue-violet semiconductor laser element 3 can be connected. Can be simply and easily connected by the wire 3W, and the p-type pad electrode 22a of the infrared semiconductor laser element 2 and the third terminal 3P can be simply and easily connected by the wire 2Wa.

  Further, the connection position between the p-type pad electrode 22a of the infrared semiconductor laser element 2 and the third terminal 3P is the connection position between the p-type pad electrode 12a of the red semiconductor laser element 1 and the first terminal 1P and the bluish purple color. The laser beam of the red semiconductor laser element 1, the infrared semiconductor laser element 2, and the blue-violet semiconductor laser element 3 is at least one of the connection positions of the p electrode 32 and the second terminal 2P of the semiconductor laser element 3. It is preferable to set the side opposite to the emission side. This prevents the wires 1Wa, 2Wa, and 3W from intersecting.

  The positions where the red semiconductor laser element 1, the infrared semiconductor laser element 2, and the blue-violet semiconductor laser element 3 are provided may be set symmetrically about the longitudinal direction of the third terminal 3P.

  The red semiconductor laser element 1 and the infrared semiconductor laser element 2 may have a monolithic structure.

  Further, a submount made of silicon carbide, aluminum nitride, or the like may be provided between the blue-violet semiconductor laser element 3 and the pedestal 500. In this case, heat radiation of the blue semiconductor laser element 3 can be realized.

  In the first and second embodiments, the wire 1Wa corresponds to the first wire, the wire 2Wa corresponds to the second wire, the wire 3W corresponds to the third wire, and the wire 1Wb corresponds to the first wire. 4 wire, and the wire 2Wb corresponds to the fifth wire. In addition, in the first and second embodiments, the wires 1Wb and 2Wb correspond to pedestal wires.

  In the first and second embodiments, the Y direction corresponds to the first direction, the Z direction corresponds to the second direction, the X direction corresponds to the third direction, and the stem 501. Corresponds to the housing, the red semiconductor laser element 1 corresponds to the first semiconductor laser element, the infrared semiconductor laser element 2 corresponds to the second semiconductor laser element, and the blue-violet semiconductor laser element 3 corresponds to the third semiconductor laser element. It corresponds to a semiconductor laser element.

  Furthermore, in the first and second embodiments, the p-type pad electrode 12a corresponds to one electrode of the first semiconductor laser element, and the p-type pad electrode 22a serves as one electrode of the second semiconductor laser element. The p electrode 32 corresponds to one electrode of the third semiconductor laser element, the n electrode 13 corresponds to the other electrode of the first semiconductor laser element, and the n electrode 23 corresponds to the other electrode of the second semiconductor laser element. The n-electrode 35 corresponds to the other electrode of the third semiconductor laser element.

(Third reference form)
FIG. 5 is a schematic cross-sectional view showing an example of a semiconductor laser device according to a third reference embodiment.

As shown in FIG. 5, the semiconductor laser device 300 according to the present reference embodiment is different from the semiconductor laser device 100 according to the first reference embodiment in that an infrared semiconductor laser element 2, a solder film H (however, a red semiconductor) This is that the p-type pad electrode 22a and the solder film H of the laser element 1 are not provided.

  6A is a schematic cross-sectional view when the semiconductor laser device 300 of FIG. 5 is assembled on the pedestal, and FIG. 6B is a diagram when the semiconductor laser device 300 of FIG. 5 is assembled on the pedestal. FIG.

As shown in FIGS. 6A and 6B, an optical pickup device manufactured by assembling a semiconductor laser device 300 according to the present reference embodiment on a pedestal 500 is a semiconductor laser device according to the first reference embodiment. Differences from the optical pickup device manufactured by assembling 100 on the base 500 are as follows.

  The photodiode 50 is electrically connected to the stem 501. The photodiode 50 and the third terminal 3P are connected by a wire 4W. Further, the p-electrode 32 of the blue-violet semiconductor laser element 3 and the second terminal 2P are connected by a wire 3W.

  Here, the positional relationship between the p-type pad electrode 12a and the p-electrode 32 of the blue-violet semiconductor laser element 3, and the first terminal 1P, the second terminal 2P, and the third terminal 3P will be described.

  The p-type pad electrode 12a is closer to the first terminal 1P than the p-electrode 32 of the blue-violet semiconductor laser element 3, and the p-electrode 32 of the blue-violet semiconductor laser element 3 is closer to the second terminal 2P than the p-type pad electrode 12a. A red semiconductor laser element 1 and a blue-violet semiconductor laser element 3 are arranged so as to be close to each other.

  Thereby, the first terminal 1P and the p-type pad electrode 12a are simply and easily connected by the wire 1Wa, and the second terminal 2P and the p-electrode 32 of the blue-violet semiconductor laser device 3 are simply and easily connected by the wire 3W. Connected to.

  Further, when the red semiconductor laser element 1 and the blue-violet semiconductor laser element 3 are viewed in the Z direction, the wires 1Wa, 3W, 1Wb, and 4W do not intersect each other.

As described above, in the present reference, pedestal 500 and between the wire 3W voltage can drive a blue-violet semiconductor laser element 3 by applying a voltage between the base 500 and the wire 1Wa The red semiconductor laser device 1 can be driven by applying. Thus, the blue-violet semiconductor laser element 3 and the red semiconductor laser element 1 can be driven independently.

  Further, the connection position between the wire 1Wa and the p-type pad electrode 12a of the red semiconductor laser element 1 and the connection position between the wire 3W and the p-electrode 32 of the blue-violet semiconductor laser element 3 are from the first terminal 1P side in the Y direction. It is preferable to arrange them in order on the second terminal 2P side. This prevents the wires 1Wa and 3W from crossing each other.

  The first terminal 1P, the second terminal 2P, the third terminal 3P, and the fourth terminal 4P are preferably provided concentrically on the stem 501 as shown in FIG. . This prevents the wires connecting the semiconductor laser elements and the terminals from crossing each other.

  Further, a submount made of silicon carbide, aluminum nitride, or the like may be provided between the blue-violet semiconductor laser element 3 and the pedestal 500. In this case, heat radiation of the blue semiconductor laser element 3 can be realized.

  Further, an infrared semiconductor laser element may be provided instead of the red semiconductor laser element 1.

In the third reference embodiment, the wire 1Wa corresponds to the first wire, the wire 3W corresponds to the second wire, the wire 1Wb corresponds to the wire on the pedestal side, and the Y direction is the first direction. , The Z direction corresponds to the second direction, the X direction corresponds to the third direction, the stem 501 corresponds to the housing, and the red semiconductor laser element 1 corresponds to the first semiconductor laser element. The blue-violet semiconductor laser element 3 corresponds to a second semiconductor laser element.

In the third reference embodiment, the p-type pad electrode 12a corresponds to one electrode of the first semiconductor laser element, the p electrode 32 corresponds to one electrode of the second semiconductor laser element, and the n electrode 13 corresponds to the other electrode of the first semiconductor laser element, and the n-electrode 35 corresponds to the other electrode of the second semiconductor laser element.

(Fourth embodiment)
FIG. 7 is a schematic cross-sectional view showing an example of a semiconductor laser device according to the fourth embodiment.

As shown in FIG. 7, the semiconductor laser device 400 according to the present embodiment is different from the semiconductor laser device 100 according to the first reference embodiment in the following points.

  A p-electrode 32 is formed so as to cover the insulating film 4 formed on the upper surface of the ridge Ri and both sides of the ridge Ri. Therefore, in this embodiment, p-type pad electrodes 12a and 22a are not provided.

  A red semiconductor laser element 1 and an infrared semiconductor laser element 2 are formed on both sides of the p-electrode 32 via solder films H, respectively.

  Thus, in the semiconductor laser device 400 according to the present embodiment, the p-electrode 12 of the red semiconductor laser element 1, the p-electrode 22 of the infrared semiconductor laser element 2, and the p-electrode 32 of the blue-violet semiconductor laser element 3 are electrically connected. Connected. The end of the n-electrode 35 of the blue-violet semiconductor laser element 3 is formed so as to protrude outside the blue-violet semiconductor laser element 3.

  FIG. 8A is a schematic cross-sectional view when the semiconductor laser device 400 of FIG. 7 is assembled on the pedestal, and FIG. 8B is a diagram when the semiconductor laser device 400 of FIG. 7 is assembled on the pedestal. FIG.

As shown in FIGS. 8A and 8B, an optical pickup device manufactured by assembling a semiconductor laser device 400 according to the present embodiment on a pedestal 500 is a semiconductor laser device according to a first reference embodiment. Differences from the optical pickup device manufactured by assembling 100 on the base 500 are as follows.

  An insulating submount 60 is provided between the n-electrode 35 and the pedestal 500 of the blue-violet semiconductor laser device 3. Thereby, the n-electrode 35 and the pedestal 500 are insulated by the insulating submount 60.

  Further, the n electrode 13 of the red semiconductor laser element 1 and the first terminal 1P are connected by a wire 1Wa, the n electrode 23 of the infrared semiconductor laser element 2 and the second terminal 2P are connected by a wire 2Wa, and blue The n-electrode 35 of the violet semiconductor laser element 3 and the third terminal 3P are connected by a wire 3W.

  Further, the p-electrode 32 of the blue-violet semiconductor laser device 3 and the pedestal 500 are connected by a wire 1Wb. Here, the wire 1Wb corresponds to a wire on the pedestal side.

  With the above configuration, when the red semiconductor laser element 1, the infrared semiconductor laser element 2, and the blue-violet semiconductor laser element 3 are viewed in the Z direction, the wires 1Wa, 2Wa, 3W, and 1Wb do not intersect each other.

  As described above, in the present embodiment, the blue-violet semiconductor laser device 3 can be driven by applying a voltage between the base 500 and the wire 3W, and the voltage between the base 500 and the wire 1Wa. Can be driven, and the infrared semiconductor laser device 2 can be driven by applying a voltage between the base 500 and the wire 2Wa.

  Thus, the blue-violet semiconductor laser element 3, the red semiconductor laser element 1, and the infrared semiconductor laser element 2 can be driven independently.

  The blue-violet emission point 31 of the blue-violet semiconductor laser element 3 that emits laser light having a shorter wavelength than the red semiconductor laser element 1 and the infrared semiconductor laser element 2 is the red emission point of the red semiconductor laser element 1 in the Y direction. 11 and the infrared emission point 21 of the infrared semiconductor laser element 2, the blue-violet semiconductor laser element 3 can be easily provided at the center of the lens when used in an optical device such as an optical pickup device. Can be positioned.

  As a result, it is possible to reduce the influence of the circumferential difference in the peripheral portion of the lens and improve the light use efficiency by the blue-violet semiconductor laser element 3.

  Further, the connection position between the wire 1Wa and the n-electrode 13 of the red semiconductor laser element 1, the connection position between the wire 3W and the n-electrode 35 of the blue-violet semiconductor laser element 3, and the wire 2Wa and the n-electrode 23 of the infrared semiconductor laser element 2 It is preferable that the connection position is arranged in order in the Y direction from the first terminal 1P side to the second terminal 2P side. This prevents the wires 1Wa, 2Wa, and 3W from intersecting.

  The length of the third terminal 3P is shorter than the length of the first terminal 1P and the second terminal 2P, and the red semiconductor laser element 1, the infrared semiconductor laser element 2, and the blue-violet semiconductor laser element 3 are The third terminal 3P is arranged between the first terminal 1P and the second terminal 2P in the Y direction, and the length of the third terminal 3P is the red semiconductor laser element 1, the infrared semiconductor laser element 2, and the blue-violet semiconductor in the X direction. The n-electrode 35 and the third terminal 3P of the blue-violet semiconductor laser element 3 are simply and easily connected by the wire 3W by being set so as not to overlap the end face on the opposite side to the laser light emission side end face of the laser element 3. Can be connected to.

  The first terminal 1P, the second terminal 2P, the third terminal 3P, and the fourth terminal 4P are preferably provided concentrically on the stem 501 as shown in FIG. . This prevents the wires connecting the semiconductor laser elements and the terminals from crossing each other.

  The positions where the red semiconductor laser element 1 and the infrared semiconductor laser element 2 are provided may be reversed.

  The red semiconductor laser element 1 and the infrared semiconductor laser element 2 may have a monolithic structure.

  In the fourth embodiment, the wire 1Wa corresponds to the first wire, the wire 2Wa corresponds to the second wire, the wire 3W corresponds to the third wire, and the wire 1Wb corresponds to the fourth wire. It corresponds to.

  In the fourth embodiment, the Y direction corresponds to the first direction, the Z direction corresponds to the second direction, the X direction corresponds to the third direction, and the stem 501 is the housing. The red semiconductor laser element 1 corresponds to the first semiconductor laser element, the infrared semiconductor laser element 2 corresponds to the second semiconductor laser element, and the blue-violet semiconductor laser element 3 corresponds to the third semiconductor laser element. It corresponds to.

  Further, in the fourth embodiment, the n electrode 13 corresponds to one electrode of the first semiconductor laser element, the n electrode 23 corresponds to one electrode of the second semiconductor laser element, and the n electrode 35 The p-electrode 12 corresponds to one electrode of the third semiconductor laser element, the p-electrode 12 corresponds to the other electrode of the first semiconductor laser element, the p-electrode 22 corresponds to the other electrode of the second semiconductor laser element, and the p-electrode 32 Corresponds to the other electrode of the third semiconductor laser element.

(Fifth embodiment)
FIG. 9 is a schematic cross-sectional view when the semiconductor laser device according to the fifth embodiment is assembled on a pedestal.

The semiconductor laser device 550 according to the present embodiment is different from the semiconductor laser device 100 according to the first reference embodiment in the following points.

  As shown in FIG. 9, the blue-violet semiconductor laser device 3 has a striped ridge portion Ri on the lower surface side. An insulating film 4 is formed on both sides of the ridge Ri, a p-electrode 32 is formed so as to cover the lower surface of the ridge Ri, and an n-electrode 35 is formed on the upper surface. The blue-violet semiconductor laser element 3 is formed with a pn junction surface 30 that is a junction surface between a p-type semiconductor and an n-type semiconductor.

  An n-electrode 13 is formed on the lower surface of the red semiconductor laser element 1, and a p-electrode 12 is formed on the upper surface. The red semiconductor laser element 1 has a pn junction surface 10 which is a junction surface between a p-type semiconductor and an n-type semiconductor.

  An n-electrode 23 is formed on the lower surface of the infrared semiconductor laser element 2, and a p-electrode 22 is formed on the upper surface. The infrared semiconductor laser element 2 has a pn junction surface 20 that is a junction surface between a p-type semiconductor and an n-type semiconductor.

  Red semiconductor laser element 1 and infrared semiconductor laser element 2 are formed on n-electrode 35 of blue-violet semiconductor laser element 3 with solder film H interposed therebetween.

  Thus, in the semiconductor laser device 550 according to the present embodiment, the n electrode 13 of the red semiconductor laser element 1, the n electrode 23 of the infrared semiconductor laser element 2, and the n electrode 35 of the blue-violet semiconductor laser element 3 are electrically connected. Connected.

An optical pickup device manufactured by assembling the semiconductor laser device 550 according to the present embodiment on the pedestal 500 is manufactured by assembling the semiconductor laser device 100 according to the first reference embodiment on the pedestal 500. The following points are different.

  An insulating submount 60 is provided between the p-electrode 32 and the pedestal 500 of the blue-violet semiconductor laser device 3. Thereby, the p-electrode 32 and the pedestal 500 are insulated by the insulating submount 60.

  Further, the p electrode 12 of the red semiconductor laser element 1 and the first terminal 1P are connected by a wire 1Wa, the p electrode 22 of the infrared semiconductor laser element 2 and the second terminal 2P are connected by a wire 2Wa, and blue The p-electrode 32 of the violet semiconductor laser element 3 and the third terminal 3P are connected by a wire 3W.

  Further, the n-electrode 35 of the blue-violet semiconductor laser device 3 and the pedestal 500 are connected by a wire 1Wb. Here, the wire 1Wb corresponds to a wire on the pedestal side.

  With the above configuration, when the red semiconductor laser element 1, the infrared semiconductor laser element 2, and the blue-violet semiconductor laser element 3 are viewed in the Z direction, the wires 1Wa, 2Wa, 3W, and 1Wb do not intersect each other.

  As described above, in the present embodiment, the blue-violet semiconductor laser device 3 can be driven by applying a voltage between the base 500 and the wire 3W, and the voltage between the base 500 and the wire 1Wa. Can be driven, and the infrared semiconductor laser device 2 can be driven by applying a voltage between the base 500 and the wire 2Wa.

  Thus, the blue-violet semiconductor laser element 3, the red semiconductor laser element 1, and the infrared semiconductor laser element 2 can be driven independently.

  The blue-violet emission point 31 of the blue-violet semiconductor laser element 3 that emits laser light having a shorter wavelength than the red semiconductor laser element 1 and the infrared semiconductor laser element 2 is the red emission point of the red semiconductor laser element 1 in the Y direction. 11 and the infrared emission point 21 of the infrared semiconductor laser element 2, the blue-violet semiconductor laser element 3 can be easily provided at the center of the lens when used in an optical device such as an optical pickup device. Can be positioned.

  As a result, it is possible to reduce the influence of the circumferential difference in the peripheral portion of the lens and improve the light use efficiency by the blue-violet semiconductor laser element 3.

  Further, the connection position between the wire 1Wa and the p-electrode 12 of the red semiconductor laser element 1, the connection position between the wire 3W and the p-electrode 32 of the blue-violet semiconductor laser element 3, and the wire 2Wa and the p-electrode 22 of the infrared semiconductor laser element 2 are used. It is preferable that the connection position is arranged in order in the Y direction from the first terminal 1P side to the second terminal 2P side. This prevents the wires 1Wa, 2Wa, and 3W from intersecting.

  The length of the third terminal 3P is shorter than the length of the first terminal 1P and the second terminal 2P, and the red semiconductor laser element 1, the infrared semiconductor laser element 2, and the blue-violet semiconductor laser element 3 are The third terminal 3P is arranged between the first terminal 1P and the second terminal 2P in the Y direction, and the length of the third terminal 3P is the red semiconductor laser element 1, the infrared semiconductor laser element 2, and the blue-violet semiconductor in the X direction. By setting the laser element 3 so as not to overlap the end face opposite to the laser light emission side end face, the p-electrode 32 and the third terminal 3P of the blue-violet semiconductor laser element 3 are simply and easily connected by the wire 3W. Can be connected to.

  The first terminal 1P, the second terminal 2P, the third terminal 3P, and the fourth terminal 4P are preferably provided concentrically on the stem 501 as shown in FIG. This prevents the wires connecting the semiconductor laser elements and the terminals from crossing each other.

  The positions where the red semiconductor laser element 1 and the infrared semiconductor laser element 2 are provided may be reversed.

  The red semiconductor laser element 1 and the infrared semiconductor laser element 2 may have a monolithic structure.

  In the fifth embodiment, the wire 1Wa corresponds to the first wire, the wire 2Wa corresponds to the second wire, the wire 3W corresponds to the third wire, and the wire 1Wb corresponds to the fourth wire. It corresponds to.

  In the fifth embodiment, the Y direction corresponds to the first direction, the Z direction corresponds to the second direction, the X direction corresponds to the third direction, and the stem 501 is the housing. The red semiconductor laser element 1 corresponds to the first semiconductor laser element, the infrared semiconductor laser element 2 corresponds to the second semiconductor laser element, and the blue-violet semiconductor laser element 3 corresponds to the third semiconductor laser element. It corresponds to.

  Further, in the fifth embodiment, the p electrode 12 corresponds to one electrode of the first semiconductor laser element, the p electrode 22 corresponds to one electrode of the second semiconductor laser element, and the p electrode 32 The n-electrode 13 corresponds to one electrode of the third semiconductor laser element, the n-electrode 13 corresponds to the other electrode of the first semiconductor laser element, the n-electrode 23 corresponds to the other electrode of the second semiconductor laser element, and the n-electrode 35 Corresponds to the other electrode of the third semiconductor laser element.

  The present invention can be used for a light source or a display device of an optical recording medium driving device and other optical devices.

It is typical sectional drawing which shows an example of the semiconductor laser apparatus which concerns on a 1st reference form. (A) is a schematic cross-sectional view when the semiconductor laser device of FIG. 1 is assembled on a pedestal, and (b) is a top view when the semiconductor laser device of FIG. 1 is assembled on a pedestal. It is a typical sectional view showing an example of a semiconductor laser device concerning a 2nd embodiment. (A) is a typical sectional view when the semiconductor laser device of FIG. 3 is assembled on a pedestal, and (b) is a top view when the semiconductor laser device of FIG. 3 is assembled on a pedestal. It is a typical sectional view showing an example of a semiconductor laser device concerning the 3rd reference form. (A) is typical sectional drawing at the time of assembling the semiconductor laser apparatus of FIG. 5 on a base, (b) is a top view at the time of assembling the semiconductor laser apparatus of FIG. 5 on a base. It is a typical sectional view showing an example of a semiconductor laser device concerning a 4th embodiment. (A) is a schematic cross-sectional view when the semiconductor laser device of FIG. 7 is assembled on a pedestal, and (b) is a top view when the semiconductor laser device of FIG. 7 is assembled on a pedestal. It is typical sectional drawing at the time of assembling the semiconductor laser apparatus which concerns on 5th Embodiment on a base.

DESCRIPTION OF SYMBOLS 1 Red semiconductor laser element 1P 1st terminal 1Wa, 1Wb, 2Wa, 2Wb, 3W, 4W Wire 2 Infrared semiconductor laser element 2P 2nd terminal 3 Blue-violet semiconductor laser element 3P 3rd terminal 4P 4th terminal 11 Red light emitting point 12, 22, 32 p electrode 12a, 22a p-type pad electrode 13, 23, 35 n electrode 21 infrared light emitting point 31 blue-violet light emitting point 50 photodiode 60 insulating submount 100, 200, 300, 400, 550 Semiconductor Laser Device 500 Base 501 Stem

Claims (12)

A conductive housing;
A conductive pedestal provided in the housing;
First, second and third terminals provided in the housing and insulated from the housing;
A fourth terminal provided in the housing and electrically connected to the pedestal;
First, second, and third semiconductor laser elements provided on the pedestal and having one electrode and the other electrode, respectively,
The first terminal and the second terminal are disposed along a first direction;
The third terminal and the fourth terminal are disposed along a second direction intersecting the first direction ;
Further comprising a submount between the one electrode and the base of the front Symbol third semiconductor laser device,
Wherein the one electrode of the third semiconductor laser device, before SL protrudes from the third semiconductor laser device on the submount, in a third direction intersecting the first direction and the second direction,
The first terminal and the one electrode of the first semiconductor laser element are connected by a first wire, and the second terminal and the one electrode of the second semiconductor laser element are connected by a second wire. And the third terminal and the one electrode of the third semiconductor laser element are connected by a third wire on the submount,
The other electrode of the third semiconductor laser element is electrically connected to the pedestal by a fourth wire , and the other electrode of the first semiconductor laser element is connected to the pedestal by the fourth wire. An electrically connected semiconductor laser device. The one electrode of the first semiconductor laser element is closer to the first terminal than the one electrode of the second and third semiconductor laser elements, and the one electrode of the second semiconductor laser element is the first electrode Closer to the second terminal than the one electrode of the first and third semiconductor laser elements
The semiconductor laser device according to claim 1. At least a part of the one electrode of the third semiconductor laser element is closer to the third terminal with respect to the first direction than the one electrode of the first and second semiconductor laser elements. The semiconductor laser device according to claim 1. The first semiconductor laser element and the second semiconductor laser device, a semiconductor laser device according to claim 1 or 3, characterized in that provided on the third semiconductor laser device. A first connection position between the first wire and the one electrode of the first semiconductor laser element; a third connection position between the third wire and the one electrode of the third semiconductor laser element; The second connection position between the second wire and the one electrode of the second semiconductor laser element is sequentially arranged from the first terminal side to the second terminal side in the first direction. the semiconductor laser device according to any one of claims 1-4, characterized in. The third connection position is set on the opposite side to the laser beam emission side of the first, second, and third semiconductor laser elements than at least one of the first and second connection positions. 6. The semiconductor laser device according to claim 5 , wherein: The first, second, and third terminals extend from one side to the other side along a third direction that intersects the first direction and the second direction,
The first, second and third semiconductor laser elements are arranged to emit main laser light to the other side along the third direction,
The other electrodes of the first, second and third semiconductor laser elements are electrically connected to each other;
The other electrode of the third semiconductor laser element is electrically connected to the pedestal by a fourth wire at a position closer to the laser beam emission side of the first semiconductor laser element than the first connection position. The semiconductor laser device according to claim 5 , wherein the semiconductor laser device is a semiconductor laser device. The first, second, and third terminals extend from one side to the other side along a third direction that intersects the first direction and the second direction,
The first, second and third semiconductor laser elements are arranged to emit main laser light to the other side along the third direction ,
Before Symbol said one first position of the output side of the laser beam of the first semiconductor laser element of the connection positions of the electrodes of the first wire first semiconductor laser device, the first semiconductor laser the semiconductor laser device according to claim 1, characterized in that the other electrode of the element is electrically connected to the pedestal by the fourth wire. In the first direction,
A light emitting portion of the first semiconductor laser element is disposed closer to the first terminal than a light emitting portion of the third semiconductor laser element;
The light emitting portion of the third semiconductor laser element is disposed closer to the first terminal than the light emitting portion of the second semiconductor laser element.
The semiconductor laser device according to claim 1 . The second connection position is greater than at least one of the first connection position and the third connection position between the third wire and the one electrode of the third semiconductor laser element. 10. The semiconductor laser device according to claim 9, wherein the semiconductor laser device is set on a side opposite to a laser beam emitting side of the first, second, and third semiconductor laser elements. Wherein the second direction first, the claims when viewed the second and third semiconductor laser devices, the first, second, third and fourth wire is characterized in that it does not intersect the respective The semiconductor laser device according to 7 or 8 . The length of the third terminal is shorter than the length of the first and second terminals,
The first, second, and third terminals extend from one side to the other side along a third direction that intersects the first direction and the second direction,
The first, second and third semiconductor laser elements are arranged to emit main laser light to the other side along the third direction,
The first, second, and third semiconductor laser elements are disposed between the first terminal and the second terminal in the first direction,
The length of the third terminal is set so as not to overlap the end surface of the first, second, and third semiconductor laser elements opposite to the laser beam emission side in the third direction. 12. The semiconductor laser device according to claim 1, wherein the semiconductor laser device is characterized in that:

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