JP2002232063A - Semiconductor laser device and light pickup device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor laser device of low price and small size in which a plurality of semiconductor lasers are enclosed in one package and a light pickup device using the semiconductor laser as a light source. SOLUTION: This light pickup device 1 is provided with two anode electrodes 3 formed on a sub mount 2 at a predetermined interval, and a first semiconductor laser chip 4 and a second semiconductor laser chip 5 mounted approximately in parallel on each of the electrodes 3 by using their anode sides as die bonding planes. The semiconductor laser chips 4 and 5 are arranged so as to project their confronting ends from the ends of the electrodes 3 by a predetermined quantity inward between the electrodes 3. Accordingly, an interval between light emitting points 7 and 8 of the two semiconductor laser chips 4 and 5 become narrow and the semiconductor laser device 1 can attain low price and downsizing structure.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor laser device and an optical pickup device, and more particularly, to a semiconductor laser device in which a plurality of semiconductor lasers are housed in one package and an optical pickup device using the semiconductor laser device as a light source. About.

[0002]

2. Description of the Related Art In recent years, as a next-generation recording medium, DV
D (Digital Video Disk) has been attracting attention, and DVD players generally use a single DVD player for DV
It is desired that both D and CD (Compact Disc) can be reproduced compatible.

For this purpose, a 635 nm or 650 nm red semiconductor laser having a short wavelength for reproducing a DVD,
There is a need for an optical pickup device equipped with a 780 nm near-infrared semiconductor laser for CD reproduction. Further, in order to reduce the size of the device, the realization of an integrated optical pickup device in which two types of semiconductor laser chips are incorporated in one package is expected.

However, in order to incorporate two light sources into one package and share an optical system, it is necessary to make the distance between the light emitting points of the two semiconductor laser chips as close as possible, and the distance is desirably 100 μm or less. .

As shown in FIG. 6, a conventional semiconductor laser device includes two semiconductor laser chips having different emission wavelengths on a single submount 100 as shown in FIG. 101, 1
02 are arranged close to each other, and the submount 100
Uses a silicon substrate. Then, a first semiconductor laser chip 101 and a second semiconductor laser chip 102 having different emission wavelengths are provided on the submount 100.
However, they are arranged in a state where the emitted lights are parallel and approached. In this conventional semiconductor laser device, a photodiode 103 for laser power monitoring is formed in a silicon submount 100.

In this conventional semiconductor laser device, the light emitting point interval is the sum of the distance h from the end of the light emitting point of the semiconductor laser chips 101 and 102 and the chip interval w. For example,
Assuming that the emission end face has a width of 250 μm, the light emitting point position is at the center, and the chip interval is 30 μm, the light emitting point interval is 2 μm.
80 μm.

As a method for reducing the interval between light emitting points, for example, a semiconductor laser device described in Japanese Patent Application Laid-Open No. H11-112089 is disclosed. This semiconductor laser device
As shown in FIG. 7, 780n
the first semiconductor laser chips 111 and 65 having an emission wavelength of m
A second semiconductor laser chip 112 having an emission wavelength of 0 nm is mounted in a junction-down state. 650
The semiconductor laser chip 112 of nm has a parallelogram peculiar to this wavelength because of the shape of the emission end face due to crystal growth. In this semiconductor laser device, the light emitting point 113 of the first semiconductor laser chip 111 and the light emitting point 114 of the second semiconductor laser chip 112 are biased toward the ends, thereby narrowing the light emitting point interval. For example, the light emitting point 113 of the first semiconductor laser chip 111 and the light emitting point 114 of the second semiconductor laser chip 112 are formed at a position 30 μm from the end in the light emitting point interval direction, and these semiconductor laser chips 111 and 112 are formed at 30 μm. In this case, the light emitting point interval can be set to 90 μm.

[0008]

However, in such a conventional semiconductor laser device, a method of arranging two semiconductor chips and a structure of the semiconductor laser chip are described. Was not described, and the disclosure was insufficient to implement the prior art.

When the anode electrodes of two semiconductor laser chips are die-bonded and mounted on one submount, it is necessary to form two anode electrodes on the insulating submount.

In general, to form an electrode pattern on a submount, a method of patterning an electrode on the submount using a metal mask is used. There are a method of separating into electrodes and a method of patterning by a lift-off method of semiconductor photolithography technology. Among these, the lowest cost method is electrode formation using a dicing saw, but has a drawback that it is difficult to make the distance between two electrodes smaller than about 50 μm. Further, in the method using the photolithography technique, the electrode interval can be reduced to 30 μm, but an expensive photomask needs to be manufactured, which has a disadvantage of increasing the cost. Further, in the metal mask method, the interval between the electrodes can be reduced only to about 200 μm.

[0011] Further, even in the photolithography technology capable of reducing the electrode interval, the electrode interval is 30 μm.
m, and it is necessary to accurately scribe the light emitting point of the semiconductor laser chip from the end to 35 μm or less in order to reduce the distance between the light emitting points of the two semiconductor laser chips to 100 μm or less. However, there was a problem that the yield was poor.

Further, the semiconductor laser chip is made of Au-Sn.
In the case of die bonding using an alloy solder, there has been a problem that the molten solder goes around the active layer of the semiconductor laser chip and causes electrical and optical defects.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a semiconductor laser device and an optical pickup device which are mounted at a low cost by reducing the distance between the light emitting points of two semiconductor laser chips.

Therefore, the first aspect of the present invention is to provide a semiconductor device in which a first electrode and a second electrode are provided at a predetermined interval on one insulating submount.
The first electrode and the second electrode are mounted substantially in parallel with the anode side as a die bonding surface.
A first semiconductor laser chip and a second semiconductor laser chip are placed on the first electrode, and opposite ends of the first semiconductor laser chip and the second semiconductor laser chip have a predetermined amount in the inward direction between the first electrode and the second electrode, respectively. 1
It is an object of the present invention to provide a small-sized semiconductor laser device which is inexpensive, has a small light emitting point interval between two semiconductor laser chips, and is small in size, by arranging the electrodes so as to protrude from ends of the second electrode and the second electrode.

According to a second aspect of the present invention, the first electrode and the second electrode
Are separated by a groove, and the first semiconductor laser chip and the second semiconductor laser chip are arranged in such a manner that opposite ends thereof protrude by a predetermined amount in the groove direction. Accordingly, it is an object of the present invention to provide a small-sized semiconductor laser device in which a light emitting point interval between two semiconductor laser chips is narrow.

According to a third aspect of the present invention, the first semiconductor laser chip and the second semiconductor laser chip are separated from each other by a distance h from the end face where the light emitting points are adjacent to each other and from the chip die bonding face to the semiconductor laser chip side. Providing a small-sized semiconductor laser device which is further inexpensive, has a smaller emission point interval between two semiconductor laser chips, and is arranged at a position of a depth d by protruding with a projection amount of not more than h-d. It is intended to be.

According to a fourth aspect of the present invention, the first electrode and the second electrode
By filling the heat conductive member in the groove separating the electrodes, the semiconductor laser chip and the heat conductive member are brought into contact with each other, to promote heat radiation from the semiconductor laser chip, at low cost, and
It is an object of the present invention to provide a small-sized semiconductor laser device in which the interval between light emitting points of two semiconductor laser chips capable of stabilizing the operation is narrow.

According to a fifth aspect of the present invention, by using the first semiconductor laser chip and the second semiconductor laser chip having different emission wavelengths, lasers having different wavelengths such as those for a CD and a DVD can be used. An object is to provide an inexpensive semiconductor laser device that emits light.

According to a sixth aspect of the present invention, the first semiconductor laser chip and the second semiconductor laser chip are configured such that their light emitting points are deviated in a direction approaching each other in the direction of the light emitting points. It is another object of the present invention to provide a small-sized semiconductor laser device in which the distance between the light emitting points of two semiconductor laser chips is further reduced.

According to a seventh aspect of the present invention, the first electrode and the second electrode
An object of the present invention is to provide a small-sized semiconductor laser device in which the distance between the light emitting points of two more inexpensive semiconductor laser chips is narrowed by forming a groove for separating the electrodes by a dicing saw.

According to an eighth aspect of the present invention, the submount is
It is an object of the present invention to provide a small-sized semiconductor laser device which is more inexpensive, has a narrower emission point interval between two semiconductor laser chips, and is smaller in size by using a material formed of silicon as a main material.

According to a ninth aspect of the present invention, a submount is provided.
By using a material mainly composed of silicon and forming a photodiode on a part of the submount, a photodiode for monitoring a semiconductor laser and the like can be formed at a low cost, thereby reducing the number of parts and further reducing the cost. It is an object of the present invention to provide a small-sized semiconductor laser device in which a light emitting point interval between two semiconductor laser chips is narrow.

According to a tenth aspect of the present invention, there is provided an optical pickup which emits two laser beams inexpensive and having narrow emission points by using the semiconductor laser device according to any one of the first to ninth aspects as a light source. It is intended to provide a device.

[0024]

According to a first aspect of the present invention, there is provided a semiconductor laser device having a first electrode and a second electrode formed at a predetermined interval on one insulating submount. In a semiconductor laser device in which a first semiconductor laser chip and a second semiconductor laser chip are mounted on an electrode and a second electrode, respectively, substantially in parallel with an anode side as a die bonding surface, the first semiconductor laser chip In the chip and the second semiconductor laser chip, opposing ends have predetermined amounts in the inward direction between the first electrode and the second electrode, respectively. The above object is achieved by arranging the electrodes so as to protrude from the ends of the two electrodes.

According to the above configuration, the first electrode and the second electrode are formed at a predetermined interval on one insulating submount, and the first and second electrodes are mounted substantially in parallel with each other with the anode side as a die bonding surface. On the first electrode and the second electrode,
The first semiconductor laser chip and the second semiconductor laser chip are arranged such that opposite ends thereof have a predetermined amount inwardly between the first electrode and the second electrode, respectively. 2
Since it is arranged in a state protruding from the end of the electrode of
The semiconductor laser device can be made inexpensive, the interval between the light emitting points of the two semiconductor laser chips can be narrow, and the size can be reduced.

In this case, for example, as described in claim 2, the first electrode and the second electrode are separated by a groove, and the first semiconductor laser chip and the second semiconductor The laser chip may be arranged in a state in which the opposite ends protrude by a predetermined amount in the groove direction.

According to the above configuration, the first electrode and the second electrode are separated by the groove, and the first semiconductor laser chip and the second semiconductor laser chip are separated from each other by the opposite ends. Since the semiconductor laser devices are arranged so as to protrude by a predetermined amount in the direction, the semiconductor laser device can be made more inexpensive, the interval between the light emitting points of the two semiconductor laser chips can be made narrower, and the size can be further reduced.

Further, for example, the first semiconductor laser chip and the second semiconductor laser chip may be arranged such that their light emitting points are separated by a distance h from end faces adjacent to each other by chip die bonding. When it is located at a depth d from the surface to the semiconductor laser chip side, it may be arranged so as to protrude with the protruding amount of not more than hd.

According to the above configuration, the first semiconductor laser chip and the second semiconductor laser chip are separated from each other by a distance h from the end face where each light emitting point is adjacent to each other, and a depth from the chip die bonding surface to the semiconductor laser chip side. When the semiconductor laser device is located at the position d, the semiconductor laser device is arranged so as to protrude with a protruding amount equal to or less than hd, so that the semiconductor laser device can be made more inexpensive,
The distance between the light emitting points of two semiconductor laser chips can be narrow, and the size can be reduced.

Further, for example, in the semiconductor laser device, the groove may be filled with a heat conducting member.

According to the above configuration, since the heat conductive member is filled in the groove separating the first electrode and the second electrode, the semiconductor laser chip and the heat conductive member are brought into contact with each other, and The heat radiation of the semiconductor laser device can be promoted, the semiconductor laser device can be inexpensive and the operation can be stabilized, and the interval between the light emitting points of the two semiconductor laser chips can be narrowed to make the semiconductor laser device small and excellent in stability. be able to.

Further, for example, the first semiconductor laser chip and the second semiconductor laser chip may have different emission wavelengths.

According to the above configuration, the first semiconductor laser chip and the second semiconductor laser chip having different emission wavelengths are used, so that lasers of different wavelengths such as those for CD and DVD are emitted. The semiconductor laser device can be made inexpensive and small.

Further, for example, as set forth in claim 6, the first semiconductor laser chip and the second semiconductor laser chip are arranged so that their light emitting points are close to each other in the light emitting point interval direction. It may be biased.

According to the above configuration, the first semiconductor laser chip and the second semiconductor laser chip are arranged such that their light emitting points are deviated in a direction closer to each other in the direction of the light emitting points. The distance between the light emitting points of the two semiconductor laser chips can be reduced, and the semiconductor laser device can be made small and inexpensive.

Also, for example, the groove may be formed by a dicing saw.

According to the above configuration, since the groove for separating the first electrode and the second electrode is formed by the dicing saw, the interval between the light emitting points of the two semiconductor laser chips can be reduced more inexpensively. Thus, the semiconductor laser device can be made smaller and more inexpensive.

Further, for example, the submount may be formed of a material containing silicon as a main material.

According to the above configuration, since the submount is formed of a material mainly composed of silicon, the semiconductor laser device can be manufactured at a lower cost, and the distance between the light emitting points of the two semiconductor laser chips can be reduced. , And can be small.

For example, in the semiconductor laser device, the submount is formed of a material having silicon as a main material, and a photodiode is formed in a part of the submount. May be used.

According to the above structure, the submount is formed of a material mainly composed of silicon, and a photodiode is formed on a part of the submount. Therefore, a photodiode for monitoring a semiconductor laser can be manufactured at a low cost. To form
The number of parts can be reduced, and the semiconductor laser device
The spacing between the light emitting points of the two more inexpensive semiconductor laser chips is narrower, and the semiconductor laser chips can be made smaller.

According to a tenth aspect of the present invention, an optical pickup device achieves the above object by using the semiconductor laser device according to any one of the first to ninth aspects as a light source.

According to the above configuration, the present invention is characterized in that:
Is used as a light source, so that the optical pickup device can be used with a narrow light emitting point.
One laser beam can be emitted and the cost can be reduced.

[0044]

Preferred embodiments of the present invention will be described below in detail with reference to the accompanying drawings. It should be noted that the embodiments described below are preferred embodiments of the present invention, and therefore, various technically preferable limitations are added. However, the scope of the present invention is not limited to the following description. The embodiments are not limited to these embodiments unless otherwise specified.

FIGS. 1 to 3 show a first embodiment of the semiconductor laser device and the optical pickup device of the present invention. FIG. 1 shows the first embodiment of the semiconductor laser device and the optical pickup device of the present invention. FIG. 3 is a front sectional view of a semiconductor laser device 1 to which the embodiment is applied.

In FIG. 1, a semiconductor laser device 1 has a sub-mount 2 on a submount 2 using photolithography technology.
Two anode electrodes 3 made of i / Pt / Au are formed, and the gap between the two anode electrodes 3 is 30 μm.
m, made by a lift-off method using a resist. The material of the submount 2 is SiC, Al
An insulating member such as N or Si is used.

On the two anode electrodes 3, a first semiconductor laser chip 4 and a second semiconductor laser chip 5 having different emission wavelengths are formed, and these first semiconductor laser chip 4 and second semiconductor laser chip 5 are formed. Each of the semiconductor laser chips 5 has an Au-
The Sn eutectic solder 6 is formed with a thickness of 3 μm. Also,
As shown in FIG. 1, the first semiconductor laser chip 4 and the second semiconductor laser chip 5 are such that the light emitting points 7 and 8 are mutually biased toward the ends on the other semiconductor laser chip 4 and 5 side. The semiconductor laser chips 4 and 5 are used, and each of them is eutectic die bonded to the anode electrode 3 one by one.
5 is projected from the anode electrode 3 in the direction of the light-emitting point and bonded by die bonding, that is, by providing a protrusion 6 from the end of the electrode 3 for the anode in the direction of the light-emitting point and die-bonding the two light-emitting elements. Points 7, 8
Can be made closer. For example, when mounting the semiconductor lasers 4 and 5 in which the interval between the anode electrodes 3 is 30 μm and the positions of the light emitting points 7 and 8 are 30 μm from the end of the chip, the protrusion from the anode electrodes 3 must be 10 μm.
μm, that is, by providing a protrusion 6 of 10 μm,
The distance between the light emitting points 7 and 8 is set to 7 by die bonding.
It can be 0 μm. The length of the protruding portion 6, that is, the protruding amount is set in a range that does not impair the heat radiation characteristics from the semiconductor laser chips 4, 5.

In the semiconductor laser chips 4 and 5, as shown in FIG. 2, the Au—Sn eutectic solder 6 is formed on the anode electrode 3 formed on the submount 2. And a metal anode electrode 11, a p-type GaAs layer 12, and an n-type current blocking layer 1 on the solder 6.
3, a p-type GaAlAs active layer 14, an n-type GaAlAs layer 15, and an n-type GaAs substrate 16 are laminated. The portion indicated by reference numeral 17 in FIG. 2 is a current confinement layer that becomes light emitting points 7 and 8.

The heat path from the semiconductor chip is described in S.D. M. See, "Super LSI Technology", 1
According to this "ultra LSI technology", the heat path from the bonded chip effectively starts from the bottom of the device (bonding surface), and the thickness of the substrate. 45 for direction
It is thought to spread at an angle of °.

As shown in FIG. 2, when the semiconductor laser chips 4 and 5 are die-bonded to the submount 2 with the anode side (the anode electrode 3 side) junction-down, heat sources of the semiconductor laser chips 4 and 5 are generated. It is considered that the spread of heat from the (the current confinement layers 17 that are the light emitting points 7 and 8) to the submount 2 side spreads in a range of 45 ° as shown by hatching in FIG.

Therefore, the protrusion amounts of the semiconductor laser chips 4 and 5 shown in FIG. 1 are 30 μm (h) from the ends of the semiconductor laser chips 4 and 5 and 5 μm (d) from the surface, as shown in FIG. In the case of a chip having a light emitting point at a position, even if the chip protrudes from the first anode electrode 3 and the second anode electrode 3 to 25 μm (h−d = 25 μm), the light emission point is not increased. The spacing can be reduced.

As described above, in the semiconductor laser device 1 according to the embodiment, since the anode electrode 3 on the submount 2 is manufactured by the photolithography technique, the cost is slightly higher. Can be made extremely close to each other.

When the semiconductor laser device 1 is applied to an optical pickup device, the optical pickup device can emit two laser beams having narrow emission points and be inexpensive.

FIG. 3 is a view showing a semiconductor laser device and an optical pickup device according to a second embodiment of the present invention.
FIG. 3 shows a semiconductor laser device 2 according to a second embodiment of the semiconductor laser device and the optical pickup device of the present invention.
FIG.

This embodiment is applied to a semiconductor laser device similar to the semiconductor laser device 1 of the first embodiment, and in the description of this embodiment,
The same components as those of the semiconductor laser device 1 according to the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

In FIG. 3, a semiconductor laser device 20 according to the present embodiment has a Ti / Pt / Au
A metal film made of a film is formed, and the metal film is separated into a first anode electrode 3 and a second anode electrode 3 by digging a separation groove 21 using a dicing saw.

As described above, when the separation groove 21 is formed in the metal film formed on the submount 2 with a dicing saw and separated into the first anode electrode 3 and the second anode electrode 3, an expensive photomask can be formed. Inexpensive first without using
The anode electrode 3 and the second anode electrode 3 can be formed, and the manufacturing cost can be reduced.

The separation of the electrode 3 by this dicing saw is as follows:
Since the width of the separation groove 21 is limited by the width of the blade,
Although the interval between the first anode electrode 3 and the second anode electrode 3 can be realized only at least about 50 μm, this is the lowest cost electrode forming process.

In this manner, the first anode electrode 3
By projecting the two semiconductor laser chips 4 and 5 into the separation groove 21 and performing die bonding on the submount 2 on which the second anode electrode 3 is formed, the light emitting point can be made closer.

For example, when the same semiconductor laser chips 4 and 5 as those in the first embodiment are mounted as the semiconductor laser chips, the width of the separation groove 21 in the dicing saw is reduced by 50%.
When the protrusion amount is set to 10 μm and the protrusion amount is set to 10 μm, a light emitting point interval of 90 μm can be realized.

The light emitting point interval is wider than the light emitting interval of the semiconductor laser device 1 of the first embodiment using photolithography, but can be set to 100 μm or less.
Semiconductor laser device 20 that can be handled by one optical system
Can be provided, and as described above, since an expensive photomask is not used, the cost can be reduced.

Then, in the semiconductor laser device 20,
As the semiconductor laser chips 4 and 5 having different emission wavelengths, for example, 780 nm for CD (Compact Disc) and DVD
When a 650 nm semiconductor laser chip for (Digital Video Disk) is mounted, an optical pickup device shared by CD and DVD can be easily manufactured at low cost.

If an inexpensive silicon substrate is used as the submount 2, the cost can be further reduced, and one of the semiconductor laser chips 4, 5 can be used.
A port diode, for example, the semiconductor laser chip 4 can be built as a photodiode for monitoring the optical output of the semiconductor laser chip 5. Therefore, the number of parts can be reduced, and the cost can be further reduced.

FIG. 4 is a view showing a semiconductor laser device and an optical pickup device according to a third embodiment of the present invention.
FIG. 4 shows a semiconductor laser device 3 to which the third embodiment of the semiconductor laser device and the optical pickup device of the present invention is applied.
0 is a front sectional view.

This embodiment is applied to a semiconductor laser device similar to the semiconductor laser device 1 of the first embodiment and the semiconductor laser device 20 of the second embodiment. In the description of the first embodiment, the first
The same components as those of the semiconductor laser device 1 of the present embodiment and the semiconductor laser device 20 of the second embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

In FIG. 4, the semiconductor laser device 30 of the present embodiment forms a metal film made of a Ti / Pt / Au film on the submount 2 in the same manner as in the second embodiment. Using a dicing saw, this metal film is separated into separation grooves 21.
, It is separated into the first anode electrode 3 and the second anode electrode 3. In the separation groove 21, in order to promote heat radiation from the semiconductor laser chips 4 and 5,
The insulating heat conductive member 31 is filled.

Specifically, after the semiconductor laser chips 4 and 5 are die-bonded to the submount 2 in which the separation grooves 21 are formed, the heat conductive member 31 contains an aluminum nitride (AlN) filler having high heat conductivity. The separation groove 21 is filled with a paste-like adhesive (Staystick Thermal Conductive Adhesive 272, thermal conductivity 1 to 1.5 W / m / ° C.), and then heated at 125 to 200 ° C. for bonding.

As described above, the heat conductive member 3 is
When the semiconductor laser chips 4 and 5 are filled, the protruding portions of the semiconductor laser chips 4 and 5 come into contact with the heat conductive member 31, so that heat radiation from the semiconductor laser chips 4 and 5 can be promoted. Can be stabilized, and the life of the semiconductor laser chips 4 and 5 can be extended.

FIG. 5 is a view showing a fourth embodiment of the semiconductor laser device and the optical pickup device of the present invention, and FIG. 5 is a diagram showing the fourth embodiment of the semiconductor laser device and the optical pickup device of the present invention. FIG. 5 is a plan view of a semiconductor laser device 40 to which the embodiment is applied.

This embodiment is applied to a semiconductor laser device similar to the semiconductor laser device 1 of the first embodiment and the semiconductor laser device 20 of the second embodiment. In the description of the first embodiment, the first
The same components as those of the semiconductor laser device 1 of the present embodiment and the semiconductor laser device 20 of the second embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

Referring to FIG. 5, a semiconductor laser device 40 of the present embodiment has an anode electrode 3 made of Ti / Pt / Au on an oxide film formed on the surface of a silicon submount 2 with Au-Sn. The semiconductor laser chips 4 and 5 are mounted by die bonding with crystal solder 8 (not shown), and two pn junction type photodiodes 41 are formed with the separation groove 21 formed in the submount 2 interposed therebetween. ing.

Although the two photodiodes 41 can output their outputs individually, in the present embodiment, the individual electrodes are electrically connected by wire bonding and used as one photodiode. In FIG. 5, reference numeral 42 denotes wires for electrical connection.

The semiconductor laser device 40 of the present embodiment is
The conventional submount and the monitoring photodiode can be used in common, so that the number of components can be reduced and the mounting cost can be reduced.

As described above, the invention made by the inventor has been specifically described based on the preferred embodiments. However, the present invention is not limited to the above, and various modifications can be made without departing from the gist of the invention. It goes without saying that it is possible.

[0075]

According to the semiconductor laser device of the present invention, the first electrode and the second electrode are formed on one insulating submount at a predetermined interval, and the anode side is die-bonded. A first semiconductor laser chip and a second semiconductor laser chip are mounted on the first electrode and the second electrode, respectively, which are mounted substantially in parallel as surfaces, and opposite ends of the first semiconductor laser chip and the second semiconductor laser chip. The semiconductor laser device is inexpensive and has two semiconductor elements, because a predetermined amount is disposed in the inner direction between the two electrodes so as to protrude from the ends of the first electrode and the second electrode. The distance between the light emitting points of the laser chip can be narrow, and the size can be reduced.

According to the semiconductor laser device of the second aspect of the present invention, the first electrode and the second electrode are separated by a groove, and the first electrode and the second electrode are separated from each other.
Semiconductor laser chip and the second semiconductor laser chip,
Since the opposing ends are arranged so as to protrude in the groove direction by a predetermined amount, the semiconductor laser device can be made even more inexpensive and the interval between the light emitting points of the two semiconductor laser chips can be reduced. The size can be further reduced.

According to the semiconductor laser device of the third aspect of the present invention, the first semiconductor laser chip and the second semiconductor laser chip are separated from each other by a distance h from an end face whose light emitting points are adjacent to each other, and a chip die bonding surface. When it is located at a depth d from the semiconductor laser chip to the semiconductor laser chip side, the semiconductor laser device is arranged so as to protrude with a protrusion amount of not more than hd, so that the semiconductor laser device is more inexpensive and the light emitting points of the two semiconductor laser chips are The interval can be narrow, and the size can be reduced.

According to the semiconductor laser device of the fourth aspect of the present invention, since the heat conductive member is filled in the groove separating the first electrode and the second electrode, the semiconductor laser chip and the heat conductive member are filled. By contacting the semiconductor laser chip, heat radiation from the semiconductor laser chip can be promoted, the semiconductor laser device can be manufactured at low cost, and the operation can be stabilized. Excellent stability can be obtained.

According to the semiconductor laser device of the fifth aspect of the present invention, the first semiconductor laser chip and the second semiconductor laser chip having different emission wavelengths are used. As described above, a semiconductor laser device that emits lasers of different wavelengths can be made inexpensive and small.

According to the semiconductor laser device of the present invention, the light emitting points of the first semiconductor laser chip and the second semiconductor laser chip are biased in a direction in which the light emitting points are close to each other in the direction of the light emitting points. Therefore, the interval between the light emitting points of the two semiconductor laser chips can be further reduced, and the semiconductor laser device can be made small and inexpensive.

According to the semiconductor laser device of the present invention, since the groove for separating the first electrode and the second electrode is formed by the dicing saw, the distance between the light emitting points of the two semiconductor laser chips is provided. Can be reduced more inexpensively, and the semiconductor laser device can be made smaller and more inexpensive.

According to the semiconductor laser device of the present invention, since the submount is formed of a material mainly composed of silicon, the semiconductor laser device can be manufactured at a lower cost. The distance between the light emitting points of the two semiconductor laser chips is narrow, and the semiconductor laser chip can be made compact.

According to the semiconductor laser device of the ninth aspect of the present invention, the submount is formed of a material mainly composed of silicon, and the photodiode is formed in a part of the submount. It is possible to reduce the number of parts by forming a photodiode for monitoring at low cost and reduce the number of parts, and to reduce the size of the semiconductor laser device so that the interval between the light emitting points of two more inexpensive semiconductor laser chips is narrower. it can.

According to the tenth aspect of the present invention, the semiconductor laser device according to any one of the first to ninth aspects is used as a light source. In addition to emitting two narrow laser beams, it can be inexpensive.

[Brief description of the drawings]

FIG. 1 is a front sectional view of a semiconductor laser device to which a first embodiment of a semiconductor laser device and an optical pickup device according to the present invention is applied.

FIG. 2 is an enlarged front sectional view of the semiconductor laser chip of FIG. 1;

FIG. 3 is a perspective view of a semiconductor laser device to which a second embodiment of the semiconductor laser device and the optical pickup device according to the present invention is applied.

FIG. 4 is a front sectional view of a semiconductor laser device to which a third embodiment of the semiconductor laser device and the optical pickup device according to the present invention is applied;

FIG. 5 is a plan view of a semiconductor laser device to which a fourth embodiment of the semiconductor laser device and the optical pickup device according to the present invention is applied.

FIG. 6 is a perspective view of a conventional semiconductor laser device.

FIG. 7 is a front sectional view of a conventional semiconductor laser device.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 optical pickup device 2 submount 3 anode electrode 4 first semiconductor laser chip 5 second semiconductor laser chip 6 solder 7, 8 light emitting point 11 metal anode electrode 12 p-type GaAs layer 13 n-type current block layer 14 p-type GaAlAs active layer 15 n-type GaAlAs layer 16 n-type GaAs substrate 20 semiconductor laser device 21 separation groove 30 semiconductor laser device 31 heat conduction member 40 semiconductor laser device 41 pn junction type photodiode 42 wire

Claims (10)

[Claims] A first electrode and a second electrode are formed at a predetermined interval on one insulating submount, and a first semiconductor laser chip and a first electrode are formed on the first electrode and the second electrode. Second
In the semiconductor laser device in which the semiconductor laser chips are mounted substantially in parallel with the anode side as the die bonding surface, the first semiconductor laser chip and the second semiconductor laser chip have opposite ends. ,
In an inward direction between the first electrode and the second electrode,
A semiconductor laser device, wherein a predetermined amount is disposed so as to protrude from end portions of the first electrode and the second electrode. 2. The semiconductor device according to claim 1, wherein the first electrode and the second electrode are separated by a groove, and the first semiconductor laser chip and the second semiconductor laser chip have opposite ends.
2. The semiconductor laser device according to claim 1, wherein the semiconductor laser device is arranged so as to protrude by a predetermined amount in the groove direction. 3. The first semiconductor laser chip and the second semiconductor laser chip.
When the respective light emitting points are located at a distance h from the end faces adjacent to each other and at a depth d from the chip die bonding surface toward the semiconductor laser chip, h−
The semiconductor laser device according to claim 1, wherein the semiconductor laser device is arranged so as to protrude with the protrusion amount of d or less. 4. The semiconductor laser device according to claim 2, wherein said groove is filled with a heat conducting member. 5. The first semiconductor laser chip and the second semiconductor laser chip.
5. The semiconductor laser device according to claim 1, wherein said semiconductor laser chips have different emission wavelengths. 6. The first semiconductor laser chip and the second semiconductor laser chip.
6. The semiconductor laser device according to claim 1, wherein the light emitting points of the semiconductor laser chips are biased in a direction approaching each other in the light emitting point interval direction. 7. The semiconductor laser device according to claim 2, wherein said groove is formed by a dicing saw. 8. The semiconductor laser device according to claim 1, wherein said submount is formed of a material containing silicon as a main raw material. 9. The semiconductor laser device according to claim 1, wherein the submount is formed of a material containing silicon as a main material, and a photodiode is formed on a part of the submount. A semiconductor laser device according to claim 8. 10. An optical pickup device, wherein the semiconductor laser device according to claim 1 is used as a light source.