JP2007096112A - Semiconductor light emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device capable of effectively radiating heat from a semiconductor light emitting element to an element mounting member housing it and being excellent in heat radiation characteristics. <P>SOLUTION: In the semiconductor light emitting device provided with the semiconductor light emitting element 21 comprising a substrate part 23 and a semiconductor light emitter 22 above it and the element mounting member 11 for housing the semiconductor light emitting element; a recess 12-1 is provided on the upper surface of the element mounting member 11, the substrate part 23 of the semiconductor light emitting element 21 is housed in the recess 12-1, and the semiconductor light emitter 22 is positioned above the upper edge of the recess 12-1. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a semiconductor light emitting device.

  In recent years, a light emitting diode (hereinafter referred to as “LED”) using a GaN-based compound semiconductor has been actively developed as a semiconductor light emitting device. When aiming at an illumination replacement application as such an LED application, improvement of heat dissipation characteristics and improvement of light extraction efficiency are important development goals.

  FIG. 13 shows an LED as a conventional semiconductor light emitting device as disclosed in, for example, Japanese Patent Laid-Open No. 10-107325 (Patent Document 1). In this conventional LED, the LED chip 21 is accommodated in the cup part inner surface 120 of the cup part 110 of the lead frame 26 with the cup and fixed with an adhesive, and the wire 25 is bonded to the electrode on the upper surface side of the LED chip 21. The other end of the wire 25 is connected to the lead frame 27 and the periphery thereof is covered with a translucent resin 20.

  In the LED having such a configuration, the dimension of the cup part inner surface 120 of the lead frame 26 with the cup is much larger than the outer dimension of the LED chip 21, and therefore, between the side surface of the LED chip 21 and the cup part inner surface 120. As a result, a large space is generated, and therefore, heat generated in the LED chip 21 is merely radiated to the lead frame 26 through only one bottom surface, and there is a problem that heat radiation characteristics are insufficient.

Japanese Patent Laid-Open No. 2000-31532 (Patent Document 2) discloses an LED in which a concave portion is formed in a cup portion or a substrate of a lead frame with a cup, and an LED chip having an outer shape substantially matching the concave portion is mounted. Yes. However, in this conventional example, since the entire LED chip is accommodated in the recess, the light from the semiconductor light emitting portion is first emitted into the recess and is repeatedly reflected and taken out from the upper part of the device. Therefore, there is a problem that the light extraction efficiency is not good.
JP-A-10-107325 JP 2000-31532 A

  The present invention has been made in view of such a conventional technical problem, and can effectively dissipate heat from a semiconductor light emitting element to an element mounting member that accommodates it, and has excellent heat dissipation characteristics. The purpose is to provide.

  A semiconductor light emitting device according to the present invention includes a semiconductor light emitting element in which a semiconductor light emitting unit is provided on an upper surface of a substrate part, and an element mounting member on which the semiconductor light emitting element is mounted. The semiconductor light emitting device has a recess for receiving the substrate portion of the semiconductor light emitting element, and the semiconductor light emitting portion is positioned above the upper edge of the recess. Thus, it is mounted on the upper surface of the element mounting member.

  Further, the concave portion has a depth corresponding to the substrate portion of the semiconductor light emitting element and a shape matching the outer shape of the substrate portion.

  In addition, the element mounting member has an upper recess having an inclined shape that is continuous with the upper edge of the recess and expands upward.

  Alternatively, the element mounting member has an upper concave portion that is continuous with the upper edge of the concave portion on the upper surface, is concentric with the concave portion, and has a wide aperture.

  The substrate portion of the semiconductor light emitting element is formed of an opaque substrate.

  Further, the substrate portion of the semiconductor light emitting element is formed of a conductive replacement substrate.

  Further, the semiconductor light-emitting portion of the semiconductor light-emitting element is covered with a phosphor that absorbs light emitted from the semiconductor light-emitting element and converts the wavelength to emit light.

  Further, the substrate portion of the semiconductor light emitting element is fixed with an adhesive in the recess of the element mounting member, and the position of the upper surface of the adhesive is set to be equal to or lower than the height of the upper edge of the recess. Is.

  Further, the surface of the element mounting member that is irradiated with light from the semiconductor light emitting portion of the semiconductor light emitting element is a mirror surface.

  According to the present invention, since the substrate portion of the semiconductor light emitting element is accommodated in the recess of the element mounting member, the heat generated in the semiconductor light emitting element is not only from the bottom surface of the semiconductor light emitting element but also from the side surface of the substrate portion. The mounting member can dissipate heat, and the heat dissipating area is greatly increased compared to the conventional case, exhibiting high heat dissipating characteristics. In addition, according to the present invention, since the semiconductor light emitting portion in the upper layer of the semiconductor light emitting element is located at a position higher than the upper edge of the concave portion of the element mounting member, the side surface of the semiconductor light emitting portion is provided. The light emitted from can be taken out to the outside, and the light extraction efficiency is good.

  Further, according to the present invention, the semiconductor light emitting part of the upper layer part of the semiconductor light emitting element is located at a position higher than the upper surface of the concave part of the element mounting member, and the concave part accommodates only the substrate part of the semiconductor light emitting element. When the substrate part is bonded and fixed in the recess of the element mounting member with solder or an adhesive, the amount of the solder or adhesive is not enough to adhere to the periphery of the substrate part so that it does not reach the semiconductor light emitting part. It can be bonded and fixed, which can easily prevent element short-circuiting.

  In addition, according to the present invention, since only the upper semiconductor light emitting portion of the semiconductor light emitting device is positioned higher than the upper surface of the concave portion of the device mounting member, the semiconductor is applied when the phosphor is applied thereto. What is necessary is just to apply | coat a fluorescent substance to the semiconductor light-emitting part thin with respect to the thickness of the whole light emitting element, it becomes easy to apply | coat uniformly and color unevenness can be reduced.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  (First Embodiment) The first embodiment of the present invention is applied to a chip type LED as shown in FIG. 13 as a semiconductor light emitting device. 1 and 2 show a lead frame 11 with a cup as an element mounting member in the chip type LED of the first embodiment and an LED chip 21 as a semiconductor light emitting element accommodated therein.

  This LED chip 21 has the structure shown in FIG. 3, and has a lower substrate portion 23 and a semiconductor light emitting portion 22 thereabove. An electrode 212 is formed on the upper surface of the semiconductor light emitting unit 22. Light emitted from the semiconductor light emitting unit 22 is emitted upward through the electrode 212.

  In order to mount the LED chip 21, a concave portion 12-1 having a depth and shape substantially the same as the thickness and the outer shape of the substrate portion 23 of the LED chip 21 is formed at the bottom of the cup portion inner surface 12-2 of the lead frame 11 with a cup. Are formed in a continuous manner. Therefore, in a state where the LED chip 21 is accommodated in the lead frame 11, the upper semiconductor light emitting unit 22 is positioned higher than the opening surface of the recess 12-1 of the lead frame 11. Moreover, since the LED chip 21 is rectangular and the concave portion 12-1 matching the rectangular shape is also rectangular, the upper inner surface 12-2 has a wide upper opening surface and gradually narrows to the lower concave portion 12-1 side. It has four surfaces which are inclined so as to be. The cup inner surface 12-2 can be a mirror surface when necessary to efficiently reflect light from the semiconductor light emitting unit 22 of the LED chip 21.

  For mounting the LED chip 21 on the lead frame 11 with the cup, the LED chip 21 is inserted into the concave portion 12-1 of the lead frame 11 with the cup, and the bottom surface and the periphery of the substrate portion 23 of the LED chip 21 are formed into the concave portion 12-1. Adhering and fixing with an adhesive 24 of solder material or resin for die bonding. As an example of this solder material, Au-Sn, Sn-Pb, Pb-Sn-Sb, Sn-Cu, and Sn-Ag solder materials can be employed. Further, as an example of the die bond resin adhesive, Ag paste, Cu paste, Au paste, Ni paste and the like can be adopted. The solder material or the adhesive 24 is used in such an amount that it does not protrude above the opening surface of the recess 12-1 so that the light emitted from the semiconductor light emitting part 22 of the LED chip 21 is not hindered by the adhesive 24. I have to. Although omitted in FIGS. 1 and 2, actually, as shown in FIG. 13, after fixing the LED chip 21 to the recess 12-1, the wire 25 is connected to the electrode 212 on the upper surface of the LED chip 21, The other end of the wire 25 is connected to the lead frame 27. And as shown in FIG. 13, the circumference | surroundings of these elements are covered with translucent resin like an epoxy resin, for example, and chip type LED is comprised.

  The LED chip 21 has the cross-sectional structure shown in FIG. 3, and on the GaN substrate 201 as a growth substrate, on the surface side of the GaN substrate, an n contact layer 202, an n clad layer 203, an active layer 204, and a cap layer 205. The p-clad layer 206 and the p-contact layer 207 are formed in this order, and the n-side electrode 211 is bonded to the back surface of the GaN substrate 201, and the p-side electrode 212 is bonded to the upper surface of the p-contact layer 207. The p-side electrode 212 is formed to be translucent in order to extract light from the active layer 204. The n-side electrode 211 and the substrate 201 are used as the substrate part 23, and the n-contact layer 202, the n-clad layer 203, the active layer 204, the cap layer 205, the p-clad layer 206, the p-contact layer 207, and the p-side electrode 212 are used as semiconductors. The light emitting unit 22 is used. However, the semiconductor light emitting unit 22 may include the upper layer including the light emitting layer as the LED chip 21, and may include only the upper layer including the active layer 204.

  Although the size of the LED chip 21 is not particularly limited, for example, the outer dimensions are 300 μm square to 1 mm square, the overall thickness is 70 to 200 μm, and the position of the semiconductor light emitting unit 22 is from the top surface of the chip. The thickness is 0.5 μm to 5 μm at a position of 10 μm.

  In addition, these layers have shown the fundamental structure, and as long as it acts as an LED chip, adding or deleting each layer is the range of a design change. As the substrate 201, a substrate on which a nitride-based semiconductor can be grown, for example, GaN, SiC, Si, GaAs, MgO, ZnO, spinel, sapphire, etc. can be used, but conductive such as GaN, SiC, Si, GaAs, etc. It is desirable that the substrate be a compatible substrate. In addition, the LED chip is not limited to the GaN system, and other LED material systems such as a ZnO system, a ZnSe system, a GaAs system, and a GaP system can be used according to a required light source color.

  In the LED which is the semiconductor light emitting device of the present embodiment, the recess 12-1 is formed so as to be continuous with the bottom of the cup inner surface 12-2 of the lead frame with a cup, and the depth and shape of the recess 12-1 are changed. Since the size is set so that only the lower substrate portion 23 of the LED chip 21 accommodated therein is accommodated, in the state where the LED chip 21 is accommodated and fixed in the recess 12-1, the semiconductor light emitting portion of the upper layer portion thereof 22 is located at a position higher than the opening surface of the recess 12-1, and can emit light emitted therefrom toward the adjacent cup portion inner surface 12-2. Therefore, the light from the LED chip 21 can be extracted efficiently. Moreover, since the shape of the recessed part 12-1 provided in the lead frame 11 with a cup corresponds to the shape of the board | substrate part 23 of the LED chip 21, the inner surface of the recessed part 12-1 which adjoins the heat | fever emitted with the light from the LED chip 21 closely. Can be conducted to the lead frame 11 itself to dissipate heat and good heat dissipation characteristics can be obtained. In addition, according to the present embodiment, since the semiconductor light emitting unit 22 of the LED chip 21 is positioned higher than the upper surface of the recess 12-1 of the lead frame 11 with the cup, the LED chip 21 is placed in the recess 12-1. Since the solder or adhesive 24 when mounting does not easily wrap around the upper surface of the LED chip 21, the element is less likely to short-circuit.

  (Second Embodiment) Next, a chip type LED as a semiconductor light emitting device according to a second embodiment of the present invention will be described with reference to FIGS. The LED according to the present embodiment is characterized in that a substrate-type LED chip 21A is used as a semiconductor light emitting element as a light source.

  The replacement substrate type LED chip 21 </ b> A is obtained by separating the semiconductor layer from the growth substrate used in the semiconductor formation step and attaching the semiconductor layer to the conductive substrate 220. As shown in FIG. 6, this reattachable substrate type LED chip 21A includes an n-contact layer 202, an n-cladding layer 203, an active layer 204, and a cap layer in order from the upper layer to the lower side as opposed to the first embodiment. 205, a p-clad layer 206, a p-contact layer 207, and a p-type electrode 212. A conductive substrate 220 as a replacement substrate is bonded to the lower surface side of the p-type electrode 212. An n-side electrode 213 is formed on the upper surface of the n-contact layer 202 that is on the upper side. For example, the thickness of the conductive substrate 220 which is a substrate to be replaced is 200 to 400 μm.

  The p-type electrode 212 includes at least an ohmic electrode. Moreover, you may comprise by the transparent ohmic electrode and the electrode which reflects light. Moreover, an electrode may be attached to the whole surface, and may be attached only to one part. When an electrode is attached to only a part, it is more desirable to form a film that reflects light. A pad electrode may be provided in order to strengthen the adhesive force with the conductive substrate 220. When solder is used for bonding, a barrier metal such as Pt or Pd may be formed to protect the ohmic electrode. The conductive substrate 220 which is a replacement substrate has conductivity made of metal and metal oxide. The conductive substrate 220 is bonded to the semiconductor layer of the wafer by soldering, bonded with a conductive paste, or bonded by a direct bonding method to provide electrical continuity with the p-type electrode 212. .

  The n-side electrode 213 is desirably arranged so as not to interfere with light extraction. A transparent electrode is more desirable. In order to connect a gold wire as the wire 25, it is desirable to form a pad electrode in part.

  Note that FIG. 5 shows a basic configuration of the LED chip 21A of the re-placing substrate type, and adding or deleting each layer is within the scope of the design change as long as it functions as the LED chip.

  In the LED chip 21A employed in the present embodiment, contrary to the first embodiment, the n contact layer 202, the n clad layer 203, the active layer 204, the cap layer 205, the p clad layer 206, and the lower layer The p contact layer 207 on the side is the semiconductor light emitting unit 22A, and the p side electrode 212 and the conductive substrate 220 are the substrate unit 23A. This classification is not limited, and the semiconductor light emitting unit 22A may be only a portion that substantially emits light.

  As shown in FIG. 4, the LED of the present embodiment accommodates the LED chip 21 </ b> A having the above structure in a recess 12-1 formed continuously on the bottom of the cup inner surface 12-2 of the lead frame 11 with a cup. The configuration is fixed with an adhesive 24. The shape and dimensional relationship between the concave portion 12-1, the cup portion inner surface 12-2 of the lead frame 11 with the cup, and the LED chip 21A are the same as those in the first embodiment. That is, the shape and depth of the recess 12-1 are substantially the same as the thickness and outer shape of the substrate portion 23A of the LED chip 21A, and the LED chip 21A is accommodated in the recess 12-1 of the lead frame 11 and the upper portion of the LED chip 21A is accommodated. The semiconductor light emitting unit 22A is positioned higher than the opening surface of the recess 12-1 of the lead frame 11. Moreover, the cup part inner surface 12-2 has four surfaces which the upper opening surface is wide and inclines so that it may become gradually narrow until it reaches the lower recessed part 12-1 side. And the cup part inner surface 12-2 can be made into a mirror surface if necessary for efficiently reflecting the light from the semiconductor light emitting part 22A of the LED chip 21A.

  The substrate portion 23A of the LED chip 21A and the recess 12-1 of the lead frame 11 with the cup are bonded with a solder material or a die bonding resin. The adhesive 24 is used in such an amount that it does not protrude above the opening surface of the recess 12-1, so that the light emitted from the semiconductor light emitting portion 22A of the LED chip 21A is not inhibited by the adhesive 24. Although the wiring is omitted in FIG. 4, it is the wiring shown in FIG. 13 as in the first embodiment.

  The LED that is the semiconductor light emitting device of the present embodiment has the same operations and effects as those of the first embodiment. In addition, by adopting the re-placed substrate type LED chip 21A as the semiconductor light emitting element, the heat capacity of the substrate portion 23A is large, and the heat transfer amount to the inner surface of the concave portion 12-1 in contact with the substrate portion 23A can be increased. The characteristics are further improved.

  (Third Embodiment) FIG. 6 shows an LED as a semiconductor light emitting device according to a third embodiment of the present invention. The LED of the present embodiment employs the same LED chip 21 as in the first embodiment, and the shape of the lead frame 11 with a cup, the concave portion 12-1, and the cup portion inner surface 12-2 provided thereon are also the first. This is the same as the embodiment. As a feature of the present embodiment, the phosphor 30 is applied in the cup portion of the lead frame 11 with a cup so as to cover the semiconductor light emitting portion 22 of the LED chip 21.

In the case of the LED of the present embodiment, when the LED chip 21 is caused to emit light by energizing the LED, the light from the semiconductor light emitting unit 22 can be converted into light having a different wavelength by the phosphor 30 and extracted. In addition, when the LED chip 21 emits near-ultraviolet light and is an LED that extracts red light, the phosphor 30 can employ, for example, Y ₂ O ₂ S: Eu, ZnS: Cu, Al can be used for the phosphor 30 for green light emission, and (Ba, Mg) Al ₁₀ O ₁₇ : Eu can be used for the phosphor 30 for blue light emission.

  Even in the present embodiment, the same operations and effects as in the first embodiment can be obtained, the light from the LED chip 21 can be efficiently extracted, and good heat dissipation characteristics can be obtained. In addition, according to the present embodiment, since the substrate portion 23 of the LED chip 21 is mounted in the concave portion 12-1 of the lead frame 11, the phosphor 30 is uniformly placed on the semiconductor light emitting portion 22 above the chip 21. It becomes easy to apply and color unevenness can be reduced.

  (Fourth Embodiment) FIG. 6 shows an LED as a semiconductor light emitting device according to a fourth embodiment of the present invention. The LED of this embodiment employs a re-placed substrate type LED chip 21A and a lead frame 11 with a cup similar to those of the second embodiment. As a feature of the present embodiment, the phosphor 30 is applied in the cup portion of the lead frame 11 with a cup so as to cover the semiconductor light emitting portion 22A of the LED chip 21A.

  Also in the case of the LED of the present embodiment, when the LED chip 21A emits light by energizing the LED, the light from the semiconductor light emitting portion 22A is converted into light of a different wavelength by the phosphor 30 and extracted. it can.

  Even in the present embodiment, the same operation and effect as in the second embodiment can be obtained, the light of the LED chip 21A can be efficiently extracted, good heat dissipation characteristics can be obtained, and the element is hardly short-circuited. In addition, color unevenness can be reduced by uniform application of the phosphor.

  (Fifth to Seventh Embodiments) FIGS. 8 to 10 show semiconductor light emitting devices according to fifth to seventh embodiments of the present invention, respectively. In the present invention, in the first to fourth embodiments, the shape of the cup portion inner surface 12-2 of the lead frame 11 with a cup is an inclined surface that is continuous with the upper edge of the concave portion 12-1 at the bottom. However, it is not limited to such a shape.

  In the fifth embodiment shown in FIG. 8, as the lead frame 11A with a cup, a horizontal step portion 12-3 is formed in a continuous portion between the cup portion inner surface 12-2 and the bottom recess portion 12-1. It is characterized by. Other configurations are the same as those of the third embodiment, and common elements are denoted by common reference numerals. Further, as in the first embodiment, the phosphor 30 can be omitted depending on the application.

  According to the fifth embodiment, in addition to the operations and effects of the first embodiment and the third embodiment, the horizontal stepped portion 12-3 is below the end of the semiconductor light emitting portion 22 of the LED chip 21. Since the light emitted downward from the semiconductor light emitting unit 22 can be effectively reflected and emitted upward, the light extraction efficiency can be improved.

  In the sixth embodiment shown in FIG. 9, as the lead frame 11B with a cup, the inner surface 12-2 of the cup has a rectangular shape having a vertical wall surface in the same manner as the recess 12-1, and Is characterized by a continuous shape formed by a horizontal stepped portion 12-3. Other configurations are the same as those of the third embodiment, and common elements are denoted by common reference numerals. Further, similarly to the first embodiment, the phosphor 30 can be omitted depending on the application.

  According to the sixth embodiment, compared to the conventional example, the heat dissipation characteristics of the LED chip 21 are improved, the light extraction efficiency is improved, the device is less likely to be short-circuited, and the phosphor 30 is attached to the LED chip 21. It becomes easy to apply uniformly on the top, and color unevenness can be reduced.

  In the seventh embodiment shown in FIG. 10, only the concave portion 12-1 is formed on the upper surface portion of the lead frame 11C, and the substrate portion 23 of the LED chip 21 is inserted into the concave portion 12-1 and bonded and fixed. The semiconductor light emitting portion 22 of the LED chip 21 protrudes from the upper surface of the lead frame 11C, and the phosphor 30 is applied to the semiconductor light emitting portion 22. The structure of the LED chip 21 and the configuration of other elements are the same as those of the third embodiment, and common elements are denoted by common reference numerals. Further, similarly to the first embodiment, the phosphor 30 can be omitted depending on the application.

  According to the seventh embodiment, compared to the conventional example, the heat dissipation characteristics of the LED chip 21 are improved, the light extraction efficiency is improved, the device is less likely to be short-circuited, and the phosphor 30 is also connected to the LED chip 21. It becomes easy to apply uniformly on the top, and color unevenness can be reduced.

  In each of the above-described embodiments, the chip type LED has been described. However, the present invention is not limited to this type, and a large number of concave portions as in the above-described embodiments are provided at predetermined positions on the mounting substrate. The present invention can be widely applied to semiconductor light emitting devices such as module-type LEDs that are formed by arrangement and in which LED chips are mounted in the respective recesses.

  Next, an example of the present invention will be described in contrast to a comparative example as a conventional example. As an example of the present invention, the chip-type LED of the first embodiment shown in FIGS. 1 and 2 having the size shown in FIG. 11 was produced, and the light emission characteristics were measured. Further, as a comparative example, the one corresponding to the conventional example shown in FIG. 13 and having the size shown in FIG. 12 was produced, and the light emission characteristics were measured. The adopted LED chip 21 is common, and the thickness is 150 μm, 350 μm square, and the thickness of the semiconductor light emitting part is 10 μm. For the adhesive 24, an Ag paste was used.

  When the light emission characteristics of the above examples and comparative examples were measured, it was confirmed that the heat dissipation characteristics and the amount of extracted light of the examples were excellent.

Sectional drawing of the lead frame with a cup in LED as a semiconductor light-emitting device of the 1st Embodiment of this invention, and the LED chip as a semiconductor light-emitting device mounted in it. The top view of the lead frame 11 with the cup of LED of the said embodiment, and the LED chip mounted in it. Sectional drawing of the LED chip as a semiconductor light-emitting device employ | adopted by the said embodiment. Sectional drawing of the lead frame with a cup in LED as a semiconductor light-emitting device of the 2nd Embodiment of this invention, and the LED chip as a semiconductor light-emitting device mounted in it. FIG. 6 is a cross-sectional view of a substrate-type LED chip as a semiconductor light-emitting element employed in the embodiment. Sectional drawing of the lead frame with a cup in LED as a semiconductor light-emitting device of the 3rd Embodiment of this invention, and the LED chip as a semiconductor light-emitting device mounted in it. Sectional drawing of the lead frame with a cup in LED as a semiconductor light-emitting device of the 4th Embodiment of this invention, and the LED chip as a semiconductor light-emitting device mounted in it. Sectional drawing of the lead frame with a cup in LED as a semiconductor light-emitting device of the 5th Embodiment of this invention, and the LED chip as a semiconductor light-emitting device mounted in it. Sectional drawing of the lead frame with a cup in LED as a semiconductor light-emitting device of the 6th Embodiment of this invention, and the LED chip as a semiconductor light-emitting device mounted in it. Sectional drawing of the lead frame in LED as a semiconductor light-emitting device of the 7th Embodiment of this invention, and the LED chip as a semiconductor light-emitting device mounted in it. Sectional drawing and top view of the lead frame with a cup in LED of the Example of this invention, and the LED chip mounted in it. Sectional drawing and top view of the lead frame with a cup in LED of the comparative example of this invention, and the LED chip mounted in it. Sectional drawing of the chip type LED of a prior art example.

Explanation of symbols

  11, 11A, 11B ... Lead frame with cup, 11C ... Lead frame, 12-1 ... Recess, 12-2 ... Inner surface of cup part, 12-3 ... Step part, 21 ... LED chip, 21A ... ) LED chip, 22, 22A ... semiconductor light emitting part, 23, 23A ... substrate part, 24 ... adhesive, 30 ... phosphor.

Claims (9)

A semiconductor light emitting element having a semiconductor light emitting part provided on the upper surface of the substrate part, and an element mounting member on which the semiconductor light emitting element is mounted;
The element mounting member has a recess on the upper surface for accommodating the substrate portion of the semiconductor light emitting element,
The semiconductor light emitting element is mounted on the upper surface of the element mounting member such that the substrate portion is accommodated in the recess of the element mounting member, and the semiconductor light emitting portion is positioned above the upper edge of the recess. A semiconductor light-emitting device.   The semiconductor light emitting device according to claim 1, wherein the recess has a depth corresponding to a substrate portion of the semiconductor light emitting element and a shape that matches an outer shape of the substrate portion.   3. The semiconductor light emitting device according to claim 1, wherein the element mounting member has an upper concave portion having an inclined shape that is continuous with the upper edge of the concave portion and spreads upward.   3. The semiconductor light emitting device according to claim 1, wherein the element mounting member has an upper concave portion that is continuous with the upper edge of the concave portion and is concentric with the concave portion and has a wide aperture.   The semiconductor light emitting device according to claim 1, wherein the substrate portion of the semiconductor light emitting element is formed of an opaque substrate.   The semiconductor light-emitting device according to claim 1, wherein the substrate portion of the semiconductor light-emitting element is formed of a conductive replacement substrate.   The semiconductor light-emitting device according to claim 1, wherein the semiconductor light-emitting portion of the semiconductor light-emitting element is covered with a phosphor that absorbs light emitted therefrom and converts the wavelength to emit light.   The substrate portion of the semiconductor light emitting element is fixed with an adhesive in the recess of the element mounting member, and the position of the upper surface of the adhesive is set to be equal to or less than the height of the upper edge of the recess. The semiconductor light-emitting device in any one of 1-7.   The semiconductor light emitting device according to claim 1, wherein a surface of the element mounting member that is irradiated with light from a semiconductor light emitting portion of the semiconductor light emitting element is a mirror surface.

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