JP6667149B1 - Semiconductor laser light source device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor laser light source device comprising a plurality of semiconductor laser elements and capable of realizing both high density and high heat dissipation. A semiconductor laser light source device includes a stem 5 including a first through hole and a second through hole that reach a second surface from a first surface, and at least a part of the stem 5 is fitted into the first through hole, A first heat sink 4 made of a material having a high thermal conductivity, and a plurality of submounts arranged along the second direction on the surface in the region exposed on the first surface side of the first through hole of the first heat sink. 3, the plurality of semiconductor laser elements 2 arranged on the respective surfaces of the submount, the hollow insulating member 13 arranged along the inner wall of the second through hole, and the inside of the insulating member. And a power supply pin 7 arranged so as to penetrate the second through hole. The length of the power supply pin protruding from the second through hole in the first direction is shorter than the length of the first heat sink protruding from the first through hole in the first direction than the second surface. [Selection diagram] FIG. 5A

Description

  The present invention relates to a semiconductor laser light source device.

  Currently, a semiconductor laser light source device in which a semiconductor laser element is housed in a package of a type called a CAN package has been put into practical use (for example, see Patent Document 1). FIG. 16 is a drawing schematically showing the structure of a conventional CAN package type semiconductor laser light source device disclosed in Patent Document 1.

  As shown in FIG. 16, a conventional semiconductor laser light source device 100 includes a stem 101, a heat sink 102 protruding from the surface of the stem 101, a submount 103 mounted on the surface of the heat sink 102, A semiconductor laser device 104 mounted on the surface of the submount 103 is provided. The power supply pin 105 is disposed through a through hole provided in the stem 101, and supplies power to the semiconductor laser element 104 via the submount 103.

  The cap 110 has a cylindrical shape, and is fixed in a state of being covered with the stem 101 for airtightness. The cap 110 is provided with a window 110a, and light emitted from the semiconductor laser device 104 is extracted to the outside through the window 110a.

JP 2017-130365 A Japanese Patent No. 5500359

  The power supply pin 105 is inserted into a through hole of the stem 101 via a low-melting glass as an insulating material. The cap 110 is generally fixed to the stem 101 by resistance welding.

  From such a viewpoint, the stem 101 is required to be a material having a hardness high enough to withstand the pressure of resistance welding and exhibiting a thermal expansion coefficient close to that of low-melting glass. From such a viewpoint, an iron alloy such as Fe (iron) or Kovar is generally used for the stem 101. However, since Fe is not a material having a sufficiently high thermal conductivity, heat generated when the semiconductor laser element 104 emits light cannot be efficiently exhausted. From this point of view, as shown in FIG. 16, a heat sink 102 made of a material having a higher thermal conductivity than Fe is arranged separately from the stem 101, and a semiconductor laser device is placed on the heat sink 102 via a submount 103. 104 is attached.

  The heat sink 102 is generally made of a material such as Cu (copper) that has a higher thermal conductivity than Fe and is available at a relatively low cost. The heat sink 102 and the stem 101 are joined via a metal brazing material such as a silver brazing.

  In recent years, demands from the market for high-brightness semiconductor laser light source devices have been increasing. The present inventor has studied increasing the luminance by arranging a plurality of semiconductor laser elements 104 in a conventional CAN package type semiconductor laser light source device 100 as shown in FIG.

  However, the semiconductor laser light source device 100 configured by arranging the plurality of semiconductor laser elements 104 in a narrow range has a problem of heat exhaustion as compared with the conventional semiconductor laser light source device 100 including the single semiconductor laser element 104. Is important. According to the inventor's diligent research, when a plurality of semiconductor laser elements 104 are simply arranged with the structure of the conventional semiconductor laser light source device 100 as shown in FIG. It has been found that it is not possible to secure such a problem, which may cause a problem such as a decrease in the output of the semiconductor laser element 104, a change in the wavelength of the emitted light, or a reduction in the lifetime.

  The present invention has been made in view of the above problems, and has as its object to provide a semiconductor laser light source device that includes a plurality of semiconductor laser elements and can realize both high density and high heat dissipation.

The semiconductor laser light source device according to the present invention,
A first surface, a second surface located in a first direction with respect to the first surface, a first through hole and a second through hole formed in a partial area and reaching the second surface from the first surface. Including, a stem made of a first metal material,
At least a portion is disposed so as to fit in the first through hole, a first heat sink made of a second metal material having a higher thermal conductivity than the first metal material,
On the surface of the first heat sink exposed on the first surface side of the first through hole, a plurality of sub-mounts are arranged along a second direction orthogonal to the first direction,
A plurality of semiconductor laser devices arranged on each surface of the plurality of submounts,
A hollow insulating member arranged along the inner wall of the second through-hole,
A power supply pin, which is disposed to pass through the inside of the insulating member and penetrate the second through hole, for supplying power to the plurality of semiconductor laser elements,
The length that the power supply pin projects from the second through hole in the first direction from the second surface is such that the first heat sink projects from the first through hole in the first direction from the second surface. It is characterized by being shorter than the length.

  For example, in a conventional CAN package type semiconductor laser light source device 100 as shown in FIG. 16, in order to supply power to the semiconductor laser element 104 via a power supply pin 105, a power supply board on which a circuit element is mounted is Usually provided. At this time, as shown in FIG. 16, since the power supply pin 105 protrudes on the opposite side to the semiconductor laser element 104, it is general to install a power supply board on this side. In the following, for convenience of description, the direction in which the semiconductor laser element 104 is disposed as viewed from the stem 101 is referred to as “up”, and the opposite direction is referred to as “down”. If described according to this name, the power supply pin 105 protrudes below the stem 101.

  Here, in order to secure further heat dissipation, an air cooling member such as a fin or a water cooling member such as a drain pipe is provided on the surface of the stem 101 opposite to the semiconductor laser element 104, that is, on the lower surface. A method of arranging the cooling member thus formed can be considered. However, as described above, since the power supply board for connecting to the power supply pin 105 needs to be disposed, the cooling member cannot be disposed directly on the lower surface of the stem 101 from the viewpoint of securing the area. . From such a viewpoint, a method of arranging a cooling member on a lower surface of the stem 101 via a base such as an aluminum die-cast is conceivable. This technique is disclosed in Patent Document 2, for example.

  According to this method, a base having a through hole enough to insert the power supply pin 105 is prepared, and the power supply board is arranged on the lower surface of the base, so that the power supply pin 105 and the power supply board are Electrical connection is secured. And a cooling member is arrange | positioned so that this base may be contacted.

  However, the base needs to be provided with a through hole for inserting the power supply pin 105 as described above, and is made of a material that can be processed by die casting, such as an aluminum alloy. This material generally has a lower thermal conductivity than the heat sink 102. That is, as a result of the provision of the base, heat absorbed by the heat sink 102 may not be efficiently discharged to the cooling member.

  According to the above configuration, the first heat sink is arranged to penetrate the first through hole formed in the stem, and the power supply pin is arranged to penetrate the second through hole formed in the stem. Is done. The length of the power supply pin protruding from the second through hole to the second surface side of the stem, that is, the side opposite to the semiconductor laser element, is such that the first heat sink is connected to the second surface side of the stem from the first through hole. Is shorter than the protruding length.

  As a result, a space area is secured between the first heat sink and the stem on the second surface side of the stem. Therefore, a power supply board electrically connected to the power supply pins can be arranged at this position.

  In other words, according to the above configuration, it is not necessary to dispose the power supply board at a position (lower side) opposite to the semiconductor laser device with respect to the first heat sink. A cooling member such as a member (corresponding to a “second heat sink” in the present specification) can be brought into direct contact. As a result, higher heat dissipation than the conventional configuration is ensured. The term “direct contact” as used herein means that the contact is made “without a component such as a base”, and is intended to include a case where the contact is made via a bonding material such as solder for fixing. .

  The second through-hole may be formed at a position separated from the semiconductor laser device in a third direction orthogonal to the first direction and the second direction.

  According to such a configuration, the power supply pin can be arranged at a position separated from the semiconductor laser element in the third direction. Then, the power supply substrate can be arranged at a position displaced in the first direction from the second through hole (that is, on the second surface side of the stem). Thereby, the arrangement position of the power supply board is ensured while the size of the stem is reduced as much as possible.

  In the above configuration, it is preferable that the third direction is the fast axis direction of the laser light emitted from the semiconductor laser device, and the second direction is the slow axis direction of the laser light. With this configuration, the semiconductor laser elements can be arranged as densely as possible, and the space can be used effectively.

  The semiconductor laser light source device includes an air-cooling member and / or an air-cooling member that is arranged to contact a region of the first heat sink that protrudes from the first through hole in the first direction from the second surface. Alternatively, a second heat sink including a water cooling member may be provided.

  The semiconductor laser light source device is disposed at a position between the second heat sink and the stem, is electrically connected to the power supply pin, and has a circuit element mounted thereon for controlling power supply to the plurality of semiconductor laser elements. A power supply substrate may be provided.

  The power supply board may be arranged on the second surface side of the stem.

  The power supply substrate may have a shape extending in the second direction.

The plurality of submounts are arranged on a surface of the first heat sink that is not parallel to the first surface,
The plurality of semiconductor laser elements may be arranged on the surfaces of the plurality of submounts so as to emit light in the first direction, respectively.

Having a mirror disposed on a surface of the first heat sink,
The plurality of submounts are arranged on a surface parallel to the first surface among the surfaces of the first heat sink,
A plurality of the semiconductor laser elements are arranged on a surface of the plurality of submounts so as to emit light in a third direction orthogonal to the first direction and the second direction, respectively.
The mirror may convert a traveling direction of light emitted from the plurality of semiconductor laser elements in the third direction to the first direction.

The first metal material is one or more materials selected from the group consisting of iron and iron alloys,
The second metal material may be one or more materials selected from the group consisting of copper and copper alloy.

  According to the semiconductor laser light source device of the present invention, a plurality of semiconductor laser elements are provided, and both high density and high heat dissipation can be realized.

It is a perspective view showing typically the structure of a first embodiment of a semiconductor laser light source device. FIG. 2 is a drawing in which a cap and a mirror are omitted from FIG. 1. It is a schematic plan view which shows the structure of a stem. FIG. 2 is a schematic plan view when the semiconductor laser light source device shown in FIG. 1 is viewed from a Z direction. FIG. 5 is a sectional view taken along line A1-A1 in FIG. FIG. 5 is a sectional view taken along line A1-A1 in FIG. It is sectional drawing which shows typically the structure of 1st embodiment of the semiconductor laser light source device containing a 2nd heat sink. FIG. 7 is a schematic diagram when the semiconductor laser light source device shown in FIG. 6 is viewed from a Z direction. FIG. 4 is a drawing schematically illustrating stress applied to a first heat sink and a stem during a joining step. It is drawing which shows typically an example of the method of fixing a 1st heat sink and a stem with respect to a 2nd heat sink. FIG. 5 is a schematic plan view showing another embodiment of the semiconductor laser light source device shown in FIG. 1 when viewed from the Z direction, following FIG. 4. It is a perspective view showing typically the structure of a second embodiment of a semiconductor laser light source device. It is the drawing which omitted the illustration of the cap from FIG. FIG. 12 is a schematic plan view when the semiconductor laser light source device shown in FIG. 11 is viewed from a Z direction. FIG. 14 is a sectional view taken along line A1-A1 in FIG. It is a top view which shows typically the structure of the stem with which the semiconductor laser light source device of another embodiment is provided. It is a drawing which shows typically the structure of the conventional semiconductor laser light source device of a CAN package type.

  An embodiment of a semiconductor laser light source device according to the present invention will be described with reference to the drawings. The following drawings are schematically shown, and the dimensional ratios in the drawings do not always match the actual dimensional ratios. Also, the dimensional ratios do not always match between the drawings.

[First embodiment]
A first embodiment of the semiconductor laser light source device according to the present invention will be described. FIG. 1 is a perspective view schematically showing the structure of the semiconductor laser light source device of the present embodiment. Note that FIG. 1 is illustrated with a part of a cap 10 described later cut away from the viewpoint of easy understanding.

  In the following description, the XYZ coordinate system described in FIG.

  As shown in FIG. 1, a semiconductor laser light source device 1 has a plurality of semiconductor laser elements 2 arranged in the X direction, a submount 3 on which each semiconductor laser element 2 is mounted, and a submount 3 on a surface. , And a stem 5 connected to the first heat sink 4.

  The semiconductor laser device 2 includes a substrate and a multilayer semiconductor layer laminated on the substrate, and emits a laser beam L2 having a wavelength determined according to a constituent material of the semiconductor layer. For example, when the semiconductor layer includes an active layer made of InGaP or InGaAlP, the semiconductor laser element 2 emits a so-called red light laser beam L2 having a wavelength band of 600 nm to 800 nm. However, in the present invention, the wavelength of the laser light L2 emitted from the semiconductor laser light source device 1 is not limited.

  In the example of the present embodiment, as shown in FIG. 1, the semiconductor laser elements 2 are arranged on the XY plane so as to be aligned in the X direction. The semiconductor laser light source device 1 has a mirror 12 for converting the traveling direction of the laser light L2 emitted from each semiconductor laser element 2 in the Y direction into the Z direction. The laser beam L2 whose traveling direction has been changed by the mirror 12 is extracted to the outside of the semiconductor laser light source device 1 through the window 10a provided in the cap 10.

  The cap 10 is provided for the purpose of protecting the semiconductor laser element 2 by hermetically sealing the inside, and is joined to the stem 5 by a method such as resistance welding.

  In this specification, the Z direction corresponds to the “first direction”, the X direction corresponds to the “second direction”, and the Y direction corresponds to the “third direction”.

The submount 3 is provided with, for example, an electrode wiring (not shown) on its surface, so that an electrical connection for power supply to the semiconductor laser element 2 is formed. The submount 3 also has a function of guiding the heat generated when the semiconductor laser device 2 emits light to the first heat sink 4 side. The material of the submount 3 is appropriately selected in consideration of heat dissipation, insulation, a difference in linear expansion coefficient from the semiconductor laser element 2, and the like. As an example, the submount 3 is made of a material such as AlN, Al ₂ O ₃ , SiC, and CuW.

  In the present embodiment, each submount 3 is mounted on a surface of the first heat sink 4 parallel to the XY plane. FIG. 2 is a drawing in which the cap 10 and the mirror 12 are omitted from FIG. 1 for easy understanding.

  The stem 5 has a first surface 5a and a second surface 5b at a position facing the first surface 5a in the Z direction. As shown in FIG. 3, the stem 5 has a first through hole 21 and a second through hole 22 penetrating in the Z direction from the first surface 5a to the second surface 5b. FIG. 3 is a schematic plan view when the stem 5 is viewed from the Z direction. As shown in FIG. 3, in the example of the present embodiment, the stem 5 has one first through hole 21 and two second through holes (22, 22).

  As described above, the cap 5 of the stem 5 is joined to the first surface 5a by a method such as resistance welding. Therefore, the stem 5 is made of a material that can be subjected to resistance welding or the like, and is made of, for example, iron, an iron alloy, or the like.

  In the present embodiment, the first through-hole 21 is formed on the surface of the stem 5 at an asymmetric position in the Y direction. That is, the stem 5 has a wide region (first portion 51) and a narrow region (second portion 52) at positions outside the first through-hole 21 in the Y direction. In the first portion 51 of the stem 5, the second through holes 22 are formed at two positions separated in the X direction.

  The first through hole 21 is a hole for fitting the first heat sink 4. As shown in FIGS. 1 and 2, the first heat sink 4 is arranged so as to be fitted in the first through hole 21 in the Z direction. In the present embodiment, the submount 3 and the semiconductor laser element 2 are mounted on the surface of the first heat sink 4 exposed on the first surface 5a side of the stem 5 of the first through hole 21.

  The first heat sink 4 has a function of discharging heat generated when the semiconductor laser element 2 emits light. For this reason, the first heat sink 4 is preferably made of a material having high thermal conductivity. More specifically, the first heat sink 4 is made of a material having a higher thermal conductivity than the stem 5, and is made of, for example, copper or a copper alloy.

  As shown in FIG. 2, in the present embodiment, the first heat sink 4 is arranged so as to protrude by a length d4 from the second surface 5b of the stem 5 in the Z direction.

  The second through holes (22, 22) provided at two locations are holes for inserting the power supply pins 7. The power supply pin 7 is made of a conductive material such as an iron alloy such as Kovar. More specifically, a hollow (cylindrical) insulating member 13 such as low-melting glass is fitted into the second through hole 22, and the power supply pin 7 is inserted inside the insulating member 13. Thus, insulation between the power supply pin 7 and the stem 5 is ensured. The power supply pin 7 is electrically connected to a power supply board 15 described later at a position on the second surface 5b side of the stem 5 and is electrically connected to the semiconductor laser element 2 at a position on the first surface 5a side. As a result, power is supplied from the power supply substrate 15 to the semiconductor laser element 2 via the power supply pins 7.

  The first heat sink 4 and the stem 5 are joined in the first through hole 21 by the joining material 6. As the bonding material 6, a metal brazing material such as a silver brazing material, a metal eutectic solder material, a metal adhesive material, or the like can be used.

  In the present embodiment, the first heat sink 4 is joined to the stem 5 by the joining material 6 on the first surface 5a side of the stem 5, but is not joined to the stem 5 on the second surface 5b side. This will be described with reference to FIGS. 4, 5A, and 5B. FIG. 4 is a schematic plan view when the semiconductor laser light source device 1 shown in FIG. 1 is viewed from the Z direction. 5A and 5B are cross-sectional views taken along line A1-A1 in FIG. 4, but the notation is different for convenience of explanation. 5A and 5B, the size of some members is exaggerated.

  As described above, the first heat sink 4 fitted in the first through hole 21 formed in the stem 5 is joined to the stem 5 by the joining material 6 in the first through hole 21. In addition, the power supply pin 7 disposed so as to penetrate through the second through hole 22 has an insulating property with the stem 5 secured by an insulating member 13 such as low melting point glass. In the example of the present embodiment, the length d4 in the Z direction of the first heat sink 4 exposed on the second surface 5b side of the stem 5 is the power supply pin exposed on the second surface 5b side of the stem 5. 7 is longer than the length d7.

  As shown in FIGS. 5A and 5B, the first heat sink 4 is joined to the stem 5 by the joining material 6 only on the first surface 5a side in the Z direction. As a result, as shown in FIG. 5B, the first heat sink 4 includes a first region 4 a fixed to the stem 5 by the bonding material 6 and a second region 4 b not fixed to the stem 5 in the Z direction. Having.

  FIG. 6 is a cross-sectional view schematically illustrating the structure of the semiconductor laser light source device 1, and further illustrates the second heat sink 31 and the power supply board 15 as compared with FIGS. 5A and 5B. The power supply substrate 15 is a substrate on which a circuit element (not shown) for controlling power supply to the semiconductor laser element 2 is mounted. FIG. 6 shows a wire 18 for electrically connecting the power supply pin 7 and the semiconductor laser element 2.

  The first heat sink 4 has a function of discharging heat generated by the semiconductor laser device 2. From the viewpoint of further increasing the heat discharging effect, it is preferable that the first heat sink 4 is brought into contact with the second heat sink 31 formed of an air cooling member or a water cooling member. According to the semiconductor laser light source device 1 of the present embodiment, the first heat sink 4 is arranged so as to protrude further than the power supply pin 7 in the Z direction. As a result, as shown in FIG. 6, the power supply board 15 can be arranged at a position between the second surface 5b of the stem 5 and the second heat sink 31.

  FIG. 7 is a schematic plan view when the semiconductor laser light source device 1 including the power supply substrate 15 is viewed in the Z direction. As shown in FIGS. 6 and 7, the power supply substrate 15 is arranged on the second surface 5b side of the stem 5 so as to extend in the X direction. The power supply pins 7 are electrically connected to the power supply board 15 by, for example, a solder material 16.

  According to this configuration, since the power supply pin 7 has a shorter projecting length in the Z direction than the first heat sink 4, the power supply pin 7 does not pass through a base such as an aluminum die-cast for arranging the power supply board 15, The heat sink 4 can be brought into contact with the second heat sink 31. Since a base such as an aluminum die-cast has a lower thermal conductivity than the second heat sink 31, by adopting such a configuration, heat dissipation is improved.

  In addition, since the first heat sink 4 is configured to protrude largely in the Z direction, the end surface on the −Z side of the first heat sink 4 remains in the first through hole 21 without protruding in the Z direction. It is possible to prevent a situation where the user does not come into contact with the device.

  Further, the first heat sink 4 has a shape having a certain width in a direction parallel to the XY plane, and is fitted into the first through hole 21 while keeping this width. Thereby, a large cross-sectional area of the first heat sink 4 used as the heat exhaust path can be ensured, so that the heat exhaust efficiency is improved.

  Further, according to the configuration of the present embodiment, the first heat sink 4 has the second region 4b not joined to the stem 5 in the Z direction. Therefore, even if the first heat sink 4 is deformed, the surface contact with the second heat sink 31 is facilitated even if the first heat sink 4 is deformed through the heating and cooling steps when the first heat sink 4 and the stem 5 are joined using the joining material 6. Can be secured. This will be described below.

  FIG. 8 is a drawing schematically illustrating the stress applied to the first heat sink 4 and the stem 5 through the step of joining the first heat sink 4 and the stem 5 using the bonding material 6.

  The joining material 6 made of a metal brazing or the like is provided on the inner wall of the first through hole 21 formed in the stem 5, and the first heat sink 4 is fitted inside the joining material 6. Thereafter, by heating to a temperature exceeding the melting point of the metal brazing (for example, about 800 ° C.), the melted bonding material 6 adheres to the outer wall of the first heat sink 4 located in the first through hole 21. Thereafter, the joining material 6 is solidified by cooling to a temperature below room temperature, whereby the first heat sink 4 and the stem 5 are fixed.

  FIG. 8A is a diagram showing a state of the first heat sink 4 and the stem 5 before heating. (B) is a drawing schematically showing stress generated on the first heat sink 4 and the stem 5 in a state of being cooled to room temperature after heating. In FIG. 8B, the direction of the force is indicated by the direction of the arrow, and the magnitude of the force is indicated by the length of the arrow.

  By being heated, the first heat sink 4 and the stem 5 expand. Here, when the first heat sink 4 is made of Cu (copper) and the stem 5 is made of Fe (iron), the thermal expansion coefficient of the first heat sink 4 is larger than that of the stem 5. For this reason, at the time of cooling, a force to contract more than the stem 5 acts on the first heat sink 4.

  Here, as described above, the first heat sink 4 is fixed to the stem 5 with the bonding material 6 on the first surface 5a side of the stem 5. For this reason, a region (first region 4 a) of the first heat sink 4 close to the first surface 5 a side of the stem 5 receives resistance to a contracting force by the stem 5 fixed by the bonding material 6. . As a result, the first region 4a of the first heat sink 4 receives the tensile stress (Sr1a, Sr2a) outward from the stem 5.

  On the other hand, the first heat sink 4 is not fixed to the stem 5 by the bonding material 6 on the second surface 5b side of the stem 5. For this reason, a force (Sr3a, Sr4a) that contracts acts on the second region 4b of the first heat sink 4 without receiving a tensile stress from the stem 5.

  Conversely, in a region near the first surface 5a, the stem 5 receives a tensile stress (Sr1b, Sr2b) inward because a force for contracting acts on the first heat sink 4. On the other hand, in a region close to the second surface 5b, since it is not fixed to the first heat sink 4 with the bonding material 6, the force (Sr3b, Sr4b) to contract without receiving a tensile stress from the first heat sink 4. Works. However, since the constituent material of the stem 5 has a lower coefficient of thermal expansion than the constituent material of the first heat sink 4, the contraction force (Sr3b) of the stem 5 is compared with the contraction force (Sr3a, Sr4a) of the first heat sink 4. , Sr4b) are small.

  That is, in the first heat sink 4, a stress (Sr 1 a, Sr 2 a) that is pulled outward acts on the first surface 5 a side of the stem 5, and a force (Sr 3 a, Sr 4 a) that contracts inward on the second surface 5 b side of the stem 5. ) Works. As a result, the first heat sink 4 is easily warped into a shape in which the first surface 5a side of the stem 5, that is, the + Z direction is convex.

  Conversely, in the stem 5, stresses (Sr 1 b, Sr 2 b) that are pulled inward act on the first surface 5 a side, and forces (Sr 3 b, Sr 4 b) tend to contract outward on the second surface 5 b side. As a result, the stem 5 is likely to warp into a shape in which the second surface 5b side, that is, the −Z direction is convex.

  As a result, as shown schematically in FIG. 9, the first heat sink 4 is pressed by pressing the stem 5 warped in a shape convex in the −Z direction in the −Z direction via the pressing member 33 (external force P1). Is easily brought into surface contact with the second heat sink 31. Thereby, heat generated in the semiconductor laser element 2 can be efficiently exhausted via the path Th2. FIG. 9 is a diagram schematically illustrating an example of a method of fixing the first heat sink 4 and the stem 5 to the second heat sink 31. However, for the sake of explanation, shapes such as warpage are exaggerated.

  As the pressing member 33, for example, aluminum, an aluminum alloy, or an iron alloy can be used. When the warp of the stem 5 is large, a spacer 35 may be provided between the stem 5 and the second heat sink 31 as shown in FIG. For the spacer 35, for example, copper, a copper alloy, aluminum, an aluminum alloy, or an iron alloy can be used.

  Further, as shown in FIG. 4, it is preferable that the semiconductor laser element 2 is disposed on the surface of the first heat sink 4 on the side closer to the first portion 51 of the stem 5. The first portion 51 having a longer length in the Y direction has a larger tensile stress generated during cooling than the second portion 52 having a shorter length in the Y direction than the first portion 51. That is, in FIG. 8, the stress Sr1a is larger than the stress Sr2a. As a result, after the cooling step, the side of the first heat sink 4 closer to the first portion 51 is further displaced in the −Z direction (the amount of warpage in the Z direction described above is increased). Therefore, by arranging the semiconductor laser element 2 near such a region, the distance between the semiconductor laser element 2 and the second heat sink 31 is reduced, and the side on which the semiconductor laser element 2 serving as a heat source is arranged is securely provided on the second heat sink 31. , The exhaust heat effect is further enhanced.

  In the above embodiment, the structure in which the second through-hole 22 is arranged at the same coordinate position as the semiconductor laser element 2 in the X direction has been described as an example. That is, the structure in which the power supply pin 7 penetrating through the second through hole 22 is disposed at the same coordinate position as the semiconductor laser element 2 has been described as an example. However, as shown in FIG. 10, the power supply pin 7 (and the second through hole 22 into which the power supply pin 7 is inserted) is not necessarily arranged at the same coordinate position as the semiconductor laser element 2 in the X direction. No problem. The same applies to the following embodiments.

[Second embodiment]
The second embodiment of the semiconductor laser light source device according to the present invention will be described focusing on points different from the first embodiment.

  FIG. 11 is a perspective view schematically showing the structure of the semiconductor laser light source device according to the present embodiment, and shows a state in which a part of the cap 10 is cut off, as in FIG. FIG. 12 is a drawing in which the illustration of the cap 10 is omitted from FIG. FIG. 13 is a schematic plan view when the semiconductor laser light source device 1 shown in FIG. 11 is viewed from the Z direction. FIG. 14 is a cross-sectional view taken along line A2-A2 in FIG. 13, and is illustrated according to the notation method of FIG. 5B.

  In the present embodiment, unlike the first embodiment, the semiconductor laser light source device 1 does not include the mirror 12. Each semiconductor laser element 2 and each submount 3 are arranged on a surface of the first heat sink 4 that is not parallel to the first surface 5a of the stem 5 (here, a surface parallel to the XZ plane). . In addition, each semiconductor laser element 2 and each submount 3 are common to the first embodiment in that they are arranged in the X direction.

  Each semiconductor laser element 2 is arranged to emit laser light L2 in the Z direction. As a result, the laser light L2 is extracted to the outside of the semiconductor laser light source device 1 through the window 10a provided in the cap 10.

  Also in the present embodiment, the length d4 in the Z direction of the first heat sink 4 exposed on the second surface 5b side of the stem 5 is exposed on the second surface 5b side of the stem 5 as in the first embodiment. It is longer than the length d7 of the feeding pin 7 that is used. According to such a configuration, as described above with reference to FIG. 6, the first heat sink 4 is directly attached to the second heat sink 31 without interposing a base such as an aluminum die cast for arranging the power supply board 15. , The exhaust heat is improved.

  Further, as shown in FIG. 14, also in the present embodiment, the first heat sink 4 is joined to the stem 5 by the joining material 6 only on the first surface 5a side in the Z direction. As a result, as shown in FIG. 14, the first heat sink 4 has a first region 4a fixed to the stem 5 by the bonding material 6 and a second region 4b not fixed to the stem 5 in the Z direction. Having. Thus, similarly to the semiconductor laser light source device 1 of the first embodiment, the first heat sink 4 is easily brought into surface contact with the second heat sink 31 (see FIG. 6), and the heat dissipation is further improved.

[Another embodiment]
Hereinafter, another embodiment will be described.

  <1> In the above embodiment, the configuration in which the bonding material 6 is provided only on the first surface 5a side of the stem 5 in the first through hole 21 has been described. However, in the configuration in which the first heat sink 4 protrudes largely in the Z direction with respect to the second surface 5b of the stem 5 as in each of the above-described embodiments, the first heat sink 4 does not 5 is not fixed. For this reason, in such a configuration, even if the bonding material 6 is provided entirely in the Z direction in the first through hole 21, in the cooling step after heating, the first heat sink 4 and the stem 5 are not shown in FIG. A stress similar to the stress described with reference to FIG.

  That is, under such a configuration, as in the above-described embodiment, since the stem 5 is warped with the −Z side protruding, the first heat sink 4 is easily brought into surface contact with the second heat sink 31, and heat dissipation is improved. Is improved.

  <2> In the above embodiment, the first through hole 21 is described as being formed on the surface of the stem 5 at an asymmetric position in the Y direction. However, in the present invention, the first through-hole 21 may be formed on the surface of the stem 5 at a position symmetrical with respect to the Y direction. That is, the first portion 51 and the second portion 52 may have the same width in the Y direction. In this case, the two second through holes 22 may be provided on either side of the first portion 51 and the second portion 52.

  <3> In the above embodiment, the description has been given assuming that the two second through holes 22 are provided outside the first through hole 21 in the Y direction. However, as shown in FIG. 15, two second through holes 22 may be provided outside the first through hole 21 in the X direction.

  <4> In the above embodiment, the position of the semiconductor laser element 2 on the surface of the first heat sink 4 is assumed to be a position close to the first portion 51 of the stem 5 having a large width in the Y direction. explained. However, in the present invention, the installation position of the semiconductor laser element 2 on the surface of the first heat sink 4 is not limited to the above. For example, in each of the above embodiments, the semiconductor laser element 2 is disposed on the surface of the first heat sink 4 at a position closer to the second portion 52 of the stem 5 having a small width in the Y direction. It doesn't matter.

  <5> In the above-described embodiment, the second through hole 22 provided in the stem 5 is described as having two positions. However, the second through hole 22 may be formed in three or more positions.

  <6> In the above embodiment, the case where the semiconductor laser elements 2 are arranged in a line in the X direction has been described. However, the semiconductor laser elements 2 may be arranged in a matrix in the X direction and the Y direction.

1: Semiconductor laser light source device 2: Semiconductor laser element 3: Submount 4: First heat sink 4a: First region of first heat sink 4b: Second region of first heat sink 5: Stem 5a: First surface of stem 5b: Second surface of stem 6: bonding material 7: power supply pin 10: cap 10 a: window 12: mirror 13: insulating member 15: power supply substrate 16: solder material 18: wire 21: first through hole 22: second through hole 31: Second heat sink 33: Pressing member 35: Spacer 51: First part of stem 52: Second part of stem 100: Conventional semiconductor laser light source device 101: Stem 102: Heat sink 103: Submount 104: Semiconductor laser element 105: Power supply pin 110: cap 110a: window L2: Laser light

Claims (7)

A first surface, a second surface facing the first surface in a first direction, and a first through hole and a second through hole formed in a partial area and reaching the second surface from the first surface. Including a hole, a stem made of a first metal material,
In the state where the portion exposed on the first surface side and the portion exposed on the second surface side have the same shape when viewed from the first direction , a part is fitted in the first through hole. A first heat sink having a rectangular parallelepiped shape , made of a second metal material having a higher thermal conductivity than the first metal material,
On the surface of the first heat sink exposed on the first surface side of the first through hole, a plurality of sub-mounts are arranged along a second direction orthogonal to the first direction,
A plurality of semiconductor laser devices arranged on each surface of the plurality of submounts,
A hollow insulating member arranged along the inner wall of the second through-hole,
A power supply pin arranged to pass through the inside of the insulating member and penetrate the second through-hole, and to supply power to the plurality of semiconductor laser elements ,
Having a mirror disposed on a surface of the first heat sink ,
The length of the power supply pin protruding from the second through hole in the first direction from the second surface is such that the first heat sink protrudes from the first through hole in the first direction from the second surface. Shorter than
The plurality of submounts are arranged on a surface parallel to the first surface among the surfaces of the first heat sink,
The plurality of semiconductor laser elements are arranged on a surface of the plurality of submounts so as to emit light in a third direction orthogonal to the first direction and the second direction, respectively.
The semiconductor laser light source device , wherein the mirror changes a traveling direction of light emitted from the plurality of semiconductor laser elements in the third direction to the first direction .   2. The device according to claim 1, wherein the second through hole is formed at a position separated from the semiconductor laser device in a third direction orthogonal to the first direction and the second direction. 3. Semiconductor laser light source device.   A second heat sink that includes an air-cooling member and / or a water-cooling member disposed so as to contact a region of the first heat sink that protrudes from the first through hole in the first direction beyond the second surface. The semiconductor laser light source device according to claim 1, further comprising a heat sink.   A power supply board, which is disposed at a position between the second heat sink and the stem, is electrically connected to the power supply pin, and has a circuit element mounted thereon for controlling power supply to the plurality of semiconductor laser elements. The semiconductor laser light source device according to claim 3, characterized in that:   The semiconductor laser light source device according to claim 4, wherein the power supply board is disposed on the second surface side of the stem.   The semiconductor laser light source device according to claim 4, wherein the power supply substrate has a shape extending in the second direction. The first metal material is one or more materials selected from the group consisting of iron and iron alloys,
The semiconductor laser light source device according to any one of claims 1 to 6 , wherein the second metal material is at least one material selected from the group consisting of copper and a copper alloy.

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