CN113206449A - Semiconductor laser based on optics ladder distribution - Google Patents
Semiconductor laser based on optics ladder distribution Download PDFInfo
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- CN113206449A CN113206449A CN202110428821.5A CN202110428821A CN113206449A CN 113206449 A CN113206449 A CN 113206449A CN 202110428821 A CN202110428821 A CN 202110428821A CN 113206449 A CN113206449 A CN 113206449A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4075—Beam steering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Semiconductor Lasers (AREA)
Abstract
A semiconductor laser based on optical step distribution relates to the technical field of semiconductor lasers, solves the problem of poor use effect caused by a mechanical step distribution mode, and comprises a first reflector and a plurality of laser units; the laser unit comprises a single-tube laser, a fast-axis collimating mirror, a slow-axis collimating mirror and a second reflecting mirror, wherein a light beam emitted by the single-tube laser is collimated by the fast-axis collimating mirror, collimated by the slow-axis collimating mirror and reflected by the second reflecting mirror to the first reflecting mirror, and is reflected by the first reflecting mirror to obtain a reflected light beam parallel to the horizontal plane; all the single-tube lasers are positioned on the same plane, all the second reflecting mirrors are positioned on the same plane, and the light beams reflected by all the second reflecting mirrors are parallel to each other. The invention does not need a mechanical step structure, realizes spatial beam combination by changing the angle of the reflector to form an optical step, improves the use effect of the semiconductor laser, and has variable spot size and space.
Description
Technical Field
The invention relates to the technical field of semiconductor lasers, in particular to a semiconductor laser based on optical step distribution.
Background
The single-tube beam-combining semiconductor laser has been widely used in various subject fields due to its advantages of high efficiency, good reliability, small size, light weight, etc.
The arrangement of the laser mainly adopts a step reflector method, namely, the reflector is adopted to reflect light beams and then superpose the light beams in the fast axis direction, and the angle and the position of the reflector are adjusted to adjust the position and the directivity error of the light beams. Therefore, a certain height difference (usually 0.38mm-0.4mm) is required between the single-tube lasers, i.e. a mechanical processing piece is processed according to the certain height difference by a mechanical step method, and then the single-tube lasers (usually COS packages, abbreviated as COS) are welded on the plane with the height difference by a solder, so that the step arrangement is realized.
However, the distribution of the mechanical steps has the following problems: as the laser power increases, the number of unit COS lasers also increases. If 20 COS are placed, the height difference is calculated as 0.4mm, and the height difference between the top and bottom COS lasers is 7.6 mm. The semiconductor laser with the structure usually conducts, cools and dissipates heat, temperature difference exists between the highest path COS and the lowest path COS, and the central wavelength of the semiconductor laser changes greatly along with the temperature, usually 0.3 nm/DEG C, so that the central wavelength and the spectral width of laser after combination can be influenced to a certain extent, especially the spectral width can be widened, and the using effect of the semiconductor laser is influenced. In addition, due to the heat dissipation problem, the service life of the high-path COS is also influenced by the overlarge height difference, and the failure probability of the COS is increased.
Disclosure of Invention
In order to solve the above problems, the present invention provides a semiconductor laser based on optical step distribution.
The technical scheme adopted by the invention for solving the technical problem is as follows:
a semiconductor laser based on optical step distribution comprises a first reflector and a plurality of laser units; the laser unit comprises a single-tube laser, a fast-axis collimating mirror, a slow-axis collimating mirror and a second reflecting mirror, wherein a light beam emitted by the single-tube laser is collimated by the fast-axis collimating mirror, collimated by the slow-axis collimating mirror and reflected by the second reflecting mirror to the first reflecting mirror, and is reflected by the first reflecting mirror to obtain a reflected light beam parallel to a horizontal plane; all the single-tube lasers are positioned on the same plane, all the second reflecting mirrors are positioned on the same plane, and the light beams reflected by all the second reflecting mirrors are parallel to each other.
Furthermore, the light beam reflected by the second reflector far away from the first reflector is transmitted to the first reflector by passing through the upper part of the second reflector near the first reflector adjacent to the second reflector.
Further, the semiconductor laser also comprises a focusing mirror and an optical fiber, and the light beam reflected by the first reflecting mirror can be focused into the optical fiber through the focusing mirror.
Furthermore, the divergence angle of the light beam emitted by the single-tube laser after being collimated by the fast axis collimating mirror and the slow axis collimating mirror is of the mrad magnitude.
The invention has the beneficial effects that:
the semiconductor laser based on optical step distribution is simple in structure, a mechanical step structure is not needed, all single-tube lasers are placed on the same plane, the heat dissipation consistency and the heat dissipation effect of all the single-tube lasers are good, the reliability of the lasers can be better guaranteed, the problem of inconsistent service life does not exist among the single-tube lasers, the problem of non-uniform temperature does not exist among the single-tube lasers, and the reduction of the laser spectrum line width is facilitated; the angle of the reflector is changed to form an optical ladder to realize spatial beam combination, and the using effect of the semiconductor laser is improved. And the laser with variable spot size and spot spacing is realized through an optical stepped structure.
Drawings
Fig. 1 is a schematic structural diagram of a semiconductor laser based on optical step profile according to the present invention.
Fig. 2 is a schematic diagram of a light beam incident on a first reflector of a semiconductor laser based on optical step profile according to the present invention.
Fig. 3 is a schematic diagram of a light beam reflected by a first reflector of a semiconductor laser based on optical step distribution according to the present invention.
Fig. 4 is an optical path diagram of a semiconductor laser based on optical step distribution according to the present invention.
Fig. 5 is a beam diagram of a semiconductor laser based on optical step profile according to the present invention when a mirror is tilted by 5 °.
Fig. 6 is a beam diagram of a semiconductor laser based on optical step profile according to the present invention with a mirror tilted by 6 °.
Fig. 7 is a schematic position diagram of a focusing mirror and an optical fiber of a semiconductor laser based on optical step profile according to the present invention.
In the figure: 1. the laser comprises a single-tube laser, 2 a fast axis collimating mirror, 3 a slow axis collimating mirror, 4 a second reflecting mirror, 5 a first reflecting mirror, 6 a focusing mirror, 7 and optical fibers.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples.
A semiconductor laser based on optical step profile, as shown in fig. 1, comprises a first mirror 5 and a plurality of laser units. The laser unit includes single tube laser 1, fast axis collimating mirror 2, slow axis collimating mirror 3 and second mirror 4, and the light path transmission in every laser unit is: the light beam emitted by the single-tube laser 1 is collimated by the fast axis collimating mirror 2, collimated by the slow axis collimating mirror 3, reflected by the second reflecting mirror 4 to the first reflecting mirror 5, and reflected by the first reflecting mirror 5 to obtain a reflected light beam parallel to the horizontal plane. All the single-tube lasers 1 are positioned on the same plane, all the second reflectors 4 are positioned on the same plane, and the light beams reflected by all the second reflectors 4 are parallel to each other.
The single-tube laser 1 adopts a COS semiconductor laser, and because the divergence angles of a fast axis and a slow axis emitted by the COS semiconductor laser are large, the fast axis is usually 40-60 degrees, and the slow axis is usually 8-12 degrees, divergence angle compression needs to be respectively carried out through a fast axis collimating mirror 2 and a slow axis collimating mirror 3, and the compression is carried out to the mrad magnitude. The traditional method adopts a mode of COS semiconductor laser mechanical steps, namely the lasers are placed along the fast axis direction in a stepped mode, so that N paths of lasers can be distributed along the fast axis direction through the height difference formed by a mechanical structure (N is an integer larger than 2), and the distance between light and light is the processing distance of the mechanical steps. Through the height difference between the mechanical ladder COS, the rear path of light path is higher than the front path of light path, so that the rear path of light path can pass through the upper edge of the second reflector 4 of the front path of light path, namely the second reflector 4 is not in light.
The invention adopts an optical step structure, namely, the fast axis direction between the COS has no mechanical height difference, and the N paths of COS are all placed on the mechanical structure with the same height, so that after light is emitted, all laser has no height difference after shaping through the fast axis and the slow axis. The second reflector 4 (also referred to herein as a small reflector) and the first reflector 5 (also referred to herein as a large reflector) are optically stepped to achieve a stepped distribution. The light beams emitted between different COS are parallel, different second reflecting mirrors 4 are parallel to each other, and the included angle between the second reflecting mirrors 4 and the horizontal plane is not equal to 90 degrees. Between two adjacent second mirrors 4, the light beam reflected by the second mirror 4 far from the first mirror 5 is transmitted to the first mirror 5 through the upper part of the second mirror 4 near the first mirror 5.
Initially all small mirrors are placed 45 degrees in the optical axis direction so that the light changes 45 degrees in the propagation direction. At this time, the light beam emitted by the COS has no height difference, and the small reflector close to the large reflector can block the light. Therefore, in the present invention, an optical step is designed, that is, the second mirror 4 is tilted at an angle along the fast axis direction, so that the light exits obliquely along the upper edge of the previous mirror, the combined beam incident on the first mirror 5 is tilted and not parallel to the horizontal plane as shown in fig. 2, and the tilted beam is adjusted to be a horizontal beam by the first mirror 5 as shown in fig. 3. At this time, by the structure of the optical ladder, under the condition that COS is in the same plane, spatial beam combination can still be realized. The optical path transmission diagram of the semiconductor laser is shown in fig. 4, the fast axis divergence angle of the semiconductor laser emitted by the COS is 60 degrees, the slow axis divergence angle is 10 degrees, the semiconductor laser is collimated by the fast axis collimating mirror 2 and the slow axis collimating mirror 3 respectively, the divergence angle can be shaped to 6mrad, the shaped collimated light is reflected by the small reflector, the optical path is changed by 45 degrees and obliquely emitted along the upper edge of the front small reflector, spatial beam combination is realized, and then the oblique light is adjusted by the large reflector to be parallel.
For mechanical steps, the spot size cannot be changed any more after the mechanical pitch is determined. The optical step method can theoretically change the size of the light spot by changing the angles of the small reflector and the large reflector. Fig. 5 shows the beam size when the inclination angles of the small reflector and the large reflector relative to the fast axis direction are 5 degrees, and fig. 6 shows the beam size when the inclination angles of the small reflector and the large reflector relative to the fast axis direction are 6 degrees, so that the beam distance and the beam size are increased when the inclination angles of the small reflector and the large reflector relative to the fast axis direction are 6 degrees, compared with 5 degrees along the fast axis direction, therefore, the optical step structure has good flexibility, and can meet the requirements of different spot distances and spot sizes. Wherein the vertical axis direction of fig. 2, 3, 5 and 6 represents the fast axis direction, the horizontal axis direction represents the slow axis direction, and the vertical axis and the horizontal axis represent the length in mm.
The light beam reflected by the first reflecting mirror 5 of the semiconductor laser can be directly output, and can also be coupled and output by the optical fiber 7, that is, the semiconductor laser further comprises a focusing mirror 6 and the optical fiber 7, as shown in fig. 7, a reflected light beam parallel to the horizontal plane and reflected by the first reflecting mirror 5 is incident on the focusing mirror 6 and is focused into the optical fiber 7 through the focusing mirror 6.
The semiconductor laser based on optical step distribution is simple in structure, a mechanical step structure is not needed, the single-tube lasers 1 are arranged on the same plane, the heat dissipation consistency and the heat dissipation effect of all the single-tube lasers 1 are good, the reliability of the lasers can be better guaranteed, the problem of inconsistent service life does not exist among the single-tube lasers 1, the problem of non-uniform temperature does not exist among the single-tube lasers 1, and the reduction of the laser spectrum line width is facilitated; the angle of the reflector is changed to form an optical ladder to realize spatial beam combination, and the using effect of the semiconductor laser is improved. And the laser with variable spot size and spot spacing is realized through an optical stepped structure.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (4)
1. A semiconductor laser based on optical step profile, characterized by comprising a first mirror (5) and a plurality of laser units; the laser unit comprises a single-tube laser (1), a fast axis collimating mirror (2), a slow axis collimating mirror (3) and a second reflecting mirror (4), wherein a light beam emitted by the single-tube laser (1) is collimated by the fast axis collimating mirror (2), collimated by the slow axis collimating mirror (3), reflected by the second reflecting mirror (4) to the first reflecting mirror (5), and reflected light beams parallel to a horizontal plane are obtained by reflection of the first reflecting mirror (5); all the single-tube lasers (1) are positioned on the same plane, all the second reflectors (4) are positioned on the same plane, and light beams reflected by all the second reflectors (4) are parallel to each other.
2. A semiconductor laser based on optical step distribution according to claim 1, characterized in that, adjacent two of said second mirrors (4), the light beam reflected by the second mirror (4) far from the first mirror (5) is transmitted to the first mirror (5) via the upper side of the second mirror (4) near the first mirror (5).
3. A semiconductor laser based on optical step profile according to claim 1, characterized in that the semiconductor laser further comprises a focusing mirror (6) and an optical fiber (7), and the light beam reflected by the first reflecting mirror (5) can be focused into the optical fiber (7) through the focusing mirror (6).
4. A semiconductor laser based on optical step distribution as claimed in claim 1, wherein the divergence angle of the light beam emitted from the single tube laser (1) collimated by the fast axis collimator lens (2) and the slow axis collimator lens (3) is of the order of mrad.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110428821.5A CN113206449A (en) | 2021-04-21 | 2021-04-21 | Semiconductor laser based on optics ladder distribution |
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| CN202110428821.5A CN113206449A (en) | 2021-04-21 | 2021-04-21 | Semiconductor laser based on optics ladder distribution |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4235987A4 (en) * | 2022-01-17 | 2024-04-17 | Wuhan Raycus Fiber Laser Technologies Co., Ltd | Semiconductor laser module and semiconductor laser |
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| CN112615248A (en) * | 2020-12-23 | 2021-04-06 | 扬州扬芯激光技术有限公司 | Blue laser |
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2021
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| CN203811855U (en) * | 2014-04-29 | 2014-09-03 | 鞍山创鑫激光技术有限公司 | Coupling system coupling multi-beam semiconductor laser into single optical fiber |
| CN204760745U (en) * | 2015-06-25 | 2015-11-11 | 鞍山伟光力激光科技有限公司 | High power semiconductor optic fibre coupled laser |
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| EP4235987A4 (en) * | 2022-01-17 | 2024-04-17 | Wuhan Raycus Fiber Laser Technologies Co., Ltd | Semiconductor laser module and semiconductor laser |
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