CN206323003U - A kind of semiconductor laser beam merging apparatus - Google Patents
A kind of semiconductor laser beam merging apparatus Download PDFInfo
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- CN206323003U CN206323003U CN201621316378.3U CN201621316378U CN206323003U CN 206323003 U CN206323003 U CN 206323003U CN 201621316378 U CN201621316378 U CN 201621316378U CN 206323003 U CN206323003 U CN 206323003U
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Abstract
The utility model belongs to semiconductor laser beam technical field, specifically a kind of semiconductor laser beam merging apparatus.Including：Cooled plate；Installed in the upper collimating element and upper small reflector of the upper prism of the cooled plate upper surface, polarizing cube, multiple semiconductor-on-insulator lasers and each semiconductor-on-insulator laser of correspondence；Installed in the lower collimating element and lower small reflector of the lower prism of the cooled plate lower surface, large reflective mirror, multiple lower semiconductor lasers and each lower semiconductor laser of correspondence；After the upper light beam that semiconductor-on-insulator laser is sent is collimated by upper collimating element, reflected by upper small reflector, then by upper prism vergence；After the lower light beam that the lower semiconductor laser is sent is collimated by lower collimating element, after being reflected by lower small reflector, then by lower prism vergence, then after large reflective mirror reflects, then the upper light beam exported in polarizing cube with upper prism carries out polarization coupling.The utility model does not need stepped plate, so as to reduce equipment volume, mitigate weight of equipment, save water-cooled plate material, reduce cost.
Description
Technical field
The utility model belongs to semiconductor laser beam technical field, and specifically a kind of semiconductor laser closes beam
Device.
Background technology
Semiconductor laser has the advantages that efficiency high, compact conformation, low cost and high reliability.But single partly lead
Body laser single tube power output is relatively low, and the light beam progress conjunction beam to multiple semiconductor laser single tubes is to obtain high-power side
Method.Common conjunction beam technology includes：Close beam, wavelength coupling, polarization coupling etc. in space.
Beam is closed by space in the prior art and obtains high power, it is necessary to which multiple semiconductor laser single tubes are arranged in into water
It is adjusted on cold drawing.However, semiconductor laser usually requires to be placed on different upright positions to stack light beam, often
Need stepped plate.As shown in figure 1, the one side of cooled plate 1 is stepped, and arrangement semiconductor laser single tube 2 and and semiconductor
The corresponding fast axis collimation lens 3 of laser single pipe 2 and slow axis collimation lens.Therefore, prior art is only in the one side of cooled plate
Arrangement semiconductor laser single tube, space utilization is not abundant enough.
Utility model content
Regarding to the issue above, the purpose of this utility model is to provide a kind of semiconductor laser beam merging apparatus, to solve
Prior art is only in the one side arrangement semiconductor laser single tube of cooled plate, the problem of space utilization is not abundant enough.
To achieve these goals, the utility model uses following technical scheme：
A kind of semiconductor laser beam merging apparatus, including：Cooled plate；Upper prism installed in the cooled plate upper surface,
Polarizing cube, the upper collimating element of multiple semiconductor-on-insulator lasers and each semiconductor-on-insulator laser of correspondence and upper small reflection
Mirror；Led installed in the lower prism of the cooled plate lower surface, large reflective mirror, multiple lower semiconductor lasers and each lower half of correspondence
The lower collimating element of body laser and lower small reflector；The upper light beam that semiconductor-on-insulator laser is sent is carried out accurate by upper collimating element
After straight, formed a line after being reflected by upper small reflector on quick shaft direction, then by upper prism vergence；The lower semiconductor laser
After the lower light beam that device is sent is collimated by lower collimating element, formed a line after being reflected by lower small reflector on quick shaft direction,
Again by lower prism vergence, the lower light beam of lower prism output after large reflective mirror reflects, then in polarizing cube with upper prism
The upper light beam of output carries out polarization coupling.
The upper collimating element includes upper fast axis collimation lens and upper slow axis collimation lens；Under the lower collimating element includes
Fast axis collimation lens and lower slow axis collimation lens.
The upper light beam and lower light beam that the semiconductor-on-insulator laser and lower semiconductor laser are sent respectively are respective slow
It is in line on direction of principal axis.
The water-cooling channel for being used for leading to cooling water is provided with the cooled plate.
The cooled plate is three layers of cooled plate, including top plate, mesosphere board and the lower plywood being sequentially connected, the upper strata
There is water-cooling channel in plate, mesosphere board and lower plywood, the water that the water-cooling channel of top plate and lower plywood all can be with mesosphere board
Cold passage is docked.
The mesosphere board is provided with cooling water inlet and coolant outlet.
The semiconductor-on-insulator laser and lower semiconductor laser are sintered on top plate and lower plywood respectively, the upper strata
Plate, mesosphere board and lower plywood are fixed by screw connection.
The cooled plate is two layers of cooled plate, and two layers of cooled plate is formed by connecting by two-ply.
The two-ply of two layers of cooled plate is provided with groove, when two-ply welds together, and groove is spliced into water-cooled and led to
Road.
There is the plate of water-cooling channel the inside that the cooled plate is shaped by 3D printing technique.
Advantage and beneficial effect of the present utility model are：More fully to utilize cooled plate and reducing system bulk, this
Utility model provides the structure that multiple semiconductor laser single tubes are arranged on a kind of two sides in cooled plate, and uses specific direction
The small reflector put forms a line come the light beam for sending multiple single tubes on quick shaft direction, it is not necessary to stepped plate.So as to subtract
Skinny device volume, the weight of equipment that mitigates, save water-cooled plate material, reduce cost.
Brief description of the drawings
Fig. 1 is the structural representation that existing laser closes beam；
Fig. 2 is one of structural representation of embodiment one of the present utility model；
Fig. 3 is the two of the structural representation of embodiment one of the present utility model；
Fig. 4 is the top view of embodiment one of the present utility model；
Fig. 5 is the side view of embodiment one of the present utility model；
Fig. 6 is hot spot schematic diagram at A in Fig. 2；
Fig. 7 is hot spot schematic diagram at B in Fig. 2；
Fig. 8 is hot spot schematic diagram at C in Fig. 2；
Fig. 9 is the structural representation of the cooled plate of embodiment one of the present utility model；
Figure 10 is the top view of the cooled plate of embodiment one of the present utility model；
Figure 11 is the side view of the cooled plate of embodiment one of the present utility model；
Figure 12 is the rearview of the cooled plate of embodiment one of the present utility model；
Figure 13 is the structural representation of the cooled plate of embodiment two of the present utility model；
Figure 14 is the top view of the cooled plate of embodiment two of the present utility model；
Figure 15 is the side view of the cooled plate of embodiment two of the present utility model；
Figure 16 is the rearview of the cooled plate of embodiment two of the present utility model.
In figure：110.1 be three layers of cooled plate, and 110.1.1 is top plate, and 110.1.2 is mesosphere board, under 110.1.3 is
Laminate, 120.1 be semiconductor-on-insulator laser, and 120.1.1-120.1.5 is the first to the 5th semiconductor-on-insulator laser, and 130.1 are
Upper light beam, 130.1.1-130.1.5 is light beam on the first to the 5th, and 154.1 be upper fast axis collimation lens, 154.1.1-
154.1.5 it is fast axis collimation lens on the first to the 5th, 158.1 be upper slow axis collimation lens, and 158.1.1-158.1.5 is first
Slow axis collimation lens on to the 5th, 162.1 be upper small reflector, and 162.1.1-162.1.5 is small reflector on the first to the 5th,
166.1 be upper prism, and 174 be polarizing cube；120.2 be lower semiconductor laser, and 120.2.1-120.2.5 is first to the
Five lower semiconductor lasers, 130.2 be lower light beam, and 130.2.1-130.2.5 is first to the five times light beams, 162.2 be under it is small
Speculum, 166.2 be lower prism, and 170 be large reflective mirror, and 110.2 be two layers of cooled plate, and 110.2.1 is upper strata cooled plate,
110.2.2 it is lower floor's cooled plate, 111 be water-cooling channel, and 112 be cooling water inlet, and 113 be coolant outlet.
Embodiment
In order that the object, technical solutions and advantages of the present invention are clearer, below in conjunction with the accompanying drawings with specific embodiment pair
The present invention is described in detail.
As illustrated in figs. 2 through 8, a kind of semiconductor laser beam merging apparatus that the utility model is provided, including：Cooled plate；Install
In the upper prism 166.1 of the cooled plate upper surface, polarizing cube 174, multiple semiconductor-on-insulator lasers 120.1 and correspondingly every
The upper collimating element and upper small reflector 162.1 of individual semiconductor-on-insulator laser 120.1；Under the cooled plate lower surface
Prism 166.2, large reflective mirror 170, multiple lower semiconductor lasers 120.2 and each lower semiconductor laser 120.2 of correspondence
Lower collimating element and lower small reflector 162.2；The upper light beam 130.1 that semiconductor-on-insulator laser 120.1 is sent is by upper collimating element
After being collimated, form a line, then turned to by upper prism 166.1 on quick shaft direction after being reflected by upper small reflector 162.1；Institute
State after the lower light beam 130.2 that lower semiconductor laser 120.2 sends collimated by lower collimating element, by lower small reflector
Form a line, then turned to by lower prism 166.2 on quick shaft direction after 162.2 reflections, the lower light beam that lower prism 166.2 is exported
130.2 after the reflection of large reflective mirror 170, then the upper light beam 130.1 exported in polarizing cube 174 with upper prism 166.1
Carry out polarization coupling.
The upper collimating element includes upper fast axis collimation lens 154.1 and upper slow axis collimation lens 158.1；The lower collimation
Element includes lower fast axis collimation lens and lower slow axis collimation lens.The semiconductor-on-insulator laser 120.1 and lower semiconductor laser
The upper light beam 130.1 and lower light beam 130.2 that device 120.2 is sent respectively are in line on respective slow-axis direction.
The water-cooling channel for being used for leading to cooling water is provided with the cooled plate.
Operation principle of the present utility model is：
There are two sets of symmetrical light paths on two surfaces up and down of shown cooled plate.In the upper surface of cooled plate, semiconductor-on-insulator swashs
The upper light beam 130.1 that light device 120.1 is sent is propagated in the x-direction.Upper light beam 130.1 is collimated in fast axle and slow-axis direction, and by
Inclined steering upper reflector 162.1 turns to form light beam of the direction of propagation parallel to the angular spread with design of yz planes
Stack.Light beam stacking is transmitted after being turned to by upper prism 166.1 along the direction parallel to z-axis.Polarizing cube 174 is in cooled plate
The light beam of surface output stacks the light beam stacking exported with lower surface and carries out polarization coupling.The compact structure of stepped plate is not needed
All semiconductor laser and its collimating element is mounted in plane, be conducive to improving uniformity and the reduction of water-cooled
System bulk.And the utilization ratio of cooled plate is improved using two surfaces up and down of cooled plate simultaneously, further reduce system body
Product.
Embodiment one
The cooled plate is three layers of cooled plate 110.1, and the two sides of three layers of cooled plate 110.1 has five semiconductor-on-insulators to swash respectively
120.1.1~120.1.5 and five lower semiconductor laser 120.2.1~120.2.5 of light device is arranged along z-axis, and spacing is 10mm.
The upper light beam that five semiconductor laser 120.1.1~120.1.5 above three layers of cooled plate 110.1 are sent
130.1.1~130.1.5 is propagated in the x-direction, as shown in Figure 6.The slow-axis direction of the light beam of each semiconductor laser is along z-axis side
To quick shaft direction is along the y-axis direction.Each semiconductor-on-insulator laser have corresponding upper fast axis collimation lens 154.1.1~
154.1.5, upper slow axis collimation lens 158.1.1~158.1.5, upper small reflector 162.1.1~162.1.5.
Upper small reflector 162.1.1~162.1.5 is long 10mm, high 5mm rectangle.First semiconductor laser
120.1.1 light beam 130.1.1 centers are origin with the intersection point of small reflector 162.1.1 on corresponding first on first sent
(0,0,0).The first semiconductor-on-insulator laser 120.1.1 of correspondence the first small reflector 162.1.1 mirror normal and y-axis angle
For 82.95 °.Projection of the mirror normal in x-z-plane and z-axis angle are 45.4385 °.The first semiconductor laser of correspondence
The coordinate at four angles of the first small reflector 162.1.1 120.1.1 be (- 3.90, -4.46, -3.175), (3.115, -
4.46,3.95)、(-3.46,0.5,-3.61)、(3.55,0.5,3.52).Small reflector 162.1.2~162.1.5 in others
Angles are identical with the first small reflector 162.1.1.Offset successively in the x direction, offset is -0.306mm, z on x directions
Offset is 10mm on direction.
The direction of propagation of upper light beam 130.1~130.5 after upper small reflector 162.1.1~162.1.5 reflection with
In the parallel plane of y-z plane.The angle of the direction of propagation and z-axis is 10 °.
The direction of propagation of upper light beam 130.1~130.5 after the refraction of upper prism 166.1 is parallel with z-axis.As shown in fig. 7,
The slow-axis direction of five hot spots is stacked.
Lower semiconductor laser 120.2.1~120.2.5, lower fast axis collimation lens below three layers of cooled plate 110.1,
Lower slow axis collimation lens, lower small reflector and the lower prism 166.2 composition light path symmetrical with light path above.
Lower light beam 130.2.1~130.2.5 that lower prism 166.2 is exported is after the reflection of large reflective mirror 170, then is polarizing
The upper light beam 130.1.1 exported in cube 174 with upper prism 166.1~130.1.5 carries out polarization coupling.
As shown in figure 8, five semiconductor-on-insulator laser 120.1.1~120.1.5 outputs above three layers of cooled plate 110.1
Five hot spots (upper light beam 130.1.1~130.1.5) and five following lower semiconductor laser 120.2.1~120.2.5
Five hot spots (lower light beam 130.2.1~130.2.5) of output are overlapping.
As shown in figs9-12, three layers of cooled plate 110.1 includes top plate 110.1.1, the mesosphere board being sequentially connected
And lower plywood 110.1.3 110.1.2.There are water-cooling channel 111, top plate in each laminate of three layers of cooled plate 110.1
110.1.1 it can all be docked with lower plywood 110.1.3 water-cooling channel with mesosphere board 110.1.2 water-cooling channel, the centre
Laminate 110.1.2 is provided with cooling water inlet 112 and coolant outlet 113.
First by semiconductor-on-insulator laser 120.1 and lower semiconductor laser 120.2 be sintered in respectively top plate 110.1.1 and
On lower plywood 110.1.3, this step can use mutually synthermal sintering process, then again with screw by top plate 110.1.1, in
Between laminate 110.1.2 and lower plywood 110.1.3 be connected.
Embodiment two
As illustrated in figures 14-16, the cooled plate is two layers of cooled plate 110.2, and two layers of cooled plate 110.2 is by two-ply
It is welded.The two-ply of two layers of cooled plate 110.2 is provided with groove, and when two-ply welds together, groove is spliced into
Water-cooling channel.First the two-ply of cooled plate is welded together, then light source is sintered in by water using the higher sintering process of temperature
In the one side of cold drawing.Then light source is sintered on the another side of cooled plate using temperature relatively low sintering process.
In 3rd embodiment of the present utility model, there is water-cooled the inside that the cooled plate is shaped by 3D printing technique
The plate of passage.The internal cooled plate for having a water-cooling channel is first made using 3D printing, then using the higher sintering process of temperature by light
Source is sintered in the one side of cooled plate.Then light source is sintered in the another side of cooled plate using the relatively low sintering process of temperature
On.
In summary, there are two sets of symmetrical light paths on two surfaces up and down of cooled plate.In the upper surface of cooled plate, semiconductor
The light beam that laser is sent is propagated in the x-direction.Light beam is collimated in fast axle and slow-axis direction, and the steering reflection mirror being inclined by turns
Stacked to form the direction of propagation parallel to the light beam of the angular spread with design of yz planes.Light beam, which is stacked, is diverted element turn
Transmitted backward along the direction parallel to z-axis.The light beam that polarization coupling element is exported to cooled plate upper surface stacks defeated with lower surface
The light beam gone out, which is stacked, carries out polarization coupling.Not needing the compact structure of stepped plate makes all semiconductor laser and its standard
Straight element can be mounted in plane, be conducive to improving the uniformity of water-cooled and reduced system bulk.And cooled plate is utilized simultaneously
Two surfaces up and down improve the utilization ratio of cooled plate, further reduce system bulk.
Claims (10)
1. a kind of semiconductor laser beam merging apparatus, it is characterised in that including：Cooled plate；Installed in the cooled plate upper surface
Upper prism (166.1), polarizing cube (174), multiple semiconductor-on-insulator lasers (120.1) and each semiconductor-on-insulator of correspondence swash
The upper collimating element and upper small reflector (162.1) of light device (120.1)；Installed in the lower prism of the cooled plate lower surface
(166.2), large reflective mirror (170), multiple lower semiconductor lasers (120.2) and each lower semiconductor laser of correspondence
(120.2) lower collimating element and lower small reflector (162.2)；The upper light beam that semiconductor-on-insulator laser (120.1) is sent
(130.1) after being collimated by upper collimating element, formed a line after being reflected by upper small reflector (162.1) on quick shaft direction,
Turned to again by upper prism (166.1)；The lower light beam (130.2) that the lower semiconductor laser (120.2) sends is by lower collimation member
After part is collimated, formed a line after being reflected by lower small reflector (162.2) on quick shaft direction, then by lower prism (166.2)
Turn to, after the lower light beam (130.2) of lower prism (166.2) output reflects by large reflective mirror (170), then in polarizing cube
(174) the upper light beam (130.1) exported in upper prism (166.1) carries out polarization coupling.
2. semiconductor laser beam merging apparatus according to claim 1, it is characterised in that the upper collimating element includes upper
Fast axis collimation lens (154.1) and upper slow axis collimation lens (158.1)；The lower collimating element include lower fast axis collimation lens and
Lower slow axis collimation lens.
3. semiconductor laser beam merging apparatus according to claim 1, it is characterised in that the semiconductor-on-insulator laser
And the upper light beam (130.1) that sends respectively of lower semiconductor laser (120.2) and lower light beam (130.2) are respective (120.1)
It is in line on slow-axis direction.
4. semiconductor laser beam merging apparatus according to claim 1, it is characterised in that being provided with the cooled plate is used for
The water-cooling channel (111) of logical cooling water.
5. semiconductor laser beam merging apparatus according to claim 4, it is characterised in that the cooled plate is three layers of water-cooled
Plate (110.1), including top plate (110.1.1), mesosphere board (110.1.2) and the lower plywood (110.1.3) being sequentially connected, institute
Stating in top plate (110.1.1), mesosphere board (110.1.2) and lower plywood (110.1.3) has water-cooling channel (111), upper strata
The water-cooling channel of plate (110.1.1) and lower plywood (110.1.3) can all be docked with the water-cooling channel of mesosphere board (110.1.2).
6. semiconductor laser beam merging apparatus according to claim 5, it is characterised in that the mesosphere board
(110.1.2) is provided with cooling water inlet (112) and coolant outlet (113).
7. semiconductor laser beam merging apparatus according to claim 5, it is characterised in that the semiconductor-on-insulator laser
(120.1) it is sintered in respectively on top plate (110.1.1) and lower plywood (110.1.3) with lower semiconductor laser (120.2), institute
Top plate (110.1.1), mesosphere board (110.1.2) and lower plywood (110.1.3) is stated to fix by screw connection.
8. semiconductor laser beam merging apparatus according to claim 1, it is characterised in that the cooled plate is two layers of water-cooled
Plate (110.2), two layers of cooled plate (110.2) is formed by connecting by two-ply.
9. semiconductor laser beam merging apparatus according to claim 8, it is characterised in that two layers of cooled plate
(110.2) two-ply is provided with groove, and when two-ply welds together, groove is spliced into water-cooling channel (111).
10. semiconductor laser beam merging apparatus according to claim 1, it is characterised in that the cooled plate is beaten by 3D
There is the plate of water-cooling channel one inside of print technology shaping.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621316378.3U CN206323003U (en) | 2016-12-02 | 2016-12-02 | A kind of semiconductor laser beam merging apparatus |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621316378.3U CN206323003U (en) | 2016-12-02 | 2016-12-02 | A kind of semiconductor laser beam merging apparatus |
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| CN206323003U true CN206323003U (en) | 2017-07-11 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107565376A (en) * | 2017-10-13 | 2018-01-09 | 西安炬光科技股份有限公司 | A kind of heat sink insulated type capsulation structure for semiconductor laser and folded battle array |
| CN107732652A (en) * | 2017-09-30 | 2018-02-23 | 西安炬光科技股份有限公司 | A kind of two-side radiation refrigerator and semiconductor devices |
| CN109273986A (en) * | 2018-11-12 | 2019-01-25 | 北京热刺激光技术有限责任公司 | A kind of semiconductor laser conjunction binding structure |
| CN113206449A (en) * | 2021-04-21 | 2021-08-03 | 吉林省长光瑞思激光技术有限公司 | Semiconductor laser based on optics ladder distribution |
| CN114006269A (en) * | 2021-12-29 | 2022-02-01 | 深圳市星汉激光科技股份有限公司 | Direct output system of high-power semiconductor laser and polarization beam combining structure thereof |
| CN114825017A (en) * | 2022-07-01 | 2022-07-29 | 武汉锐科光纤激光技术股份有限公司 | Light beam generation device, method, apparatus, storage medium, and electronic apparatus |
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2016
- 2016-12-02 CN CN201621316378.3U patent/CN206323003U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107732652A (en) * | 2017-09-30 | 2018-02-23 | 西安炬光科技股份有限公司 | A kind of two-side radiation refrigerator and semiconductor devices |
| CN107565376A (en) * | 2017-10-13 | 2018-01-09 | 西安炬光科技股份有限公司 | A kind of heat sink insulated type capsulation structure for semiconductor laser and folded battle array |
| CN109273986A (en) * | 2018-11-12 | 2019-01-25 | 北京热刺激光技术有限责任公司 | A kind of semiconductor laser conjunction binding structure |
| CN113206449A (en) * | 2021-04-21 | 2021-08-03 | 吉林省长光瑞思激光技术有限公司 | Semiconductor laser based on optics ladder distribution |
| CN114006269A (en) * | 2021-12-29 | 2022-02-01 | 深圳市星汉激光科技股份有限公司 | Direct output system of high-power semiconductor laser and polarization beam combining structure thereof |
| CN114825017A (en) * | 2022-07-01 | 2022-07-29 | 武汉锐科光纤激光技术股份有限公司 | Light beam generation device, method, apparatus, storage medium, and electronic apparatus |
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