CN109273986A - A kind of semiconductor laser conjunction binding structure - Google Patents
A kind of semiconductor laser conjunction binding structure Download PDFInfo
- Publication number
- CN109273986A CN109273986A CN201811337223.1A CN201811337223A CN109273986A CN 109273986 A CN109273986 A CN 109273986A CN 201811337223 A CN201811337223 A CN 201811337223A CN 109273986 A CN109273986 A CN 109273986A
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- semiconductor laser
- closes
- coupling element
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 230000008878 coupling Effects 0.000 claims abstract description 62
- 238000010168 coupling process Methods 0.000 claims abstract description 62
- 238000005859 coupling reaction Methods 0.000 claims abstract description 62
- 230000010287 polarization Effects 0.000 claims abstract description 34
- 230000003287 optical effect Effects 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Semiconductor Lasers (AREA)
Abstract
The present invention relates to semiconductor lasers to close beam field, especially a kind of to close binding structure conducive to the first wavelength coupling for increasing power and the polarization coupling semiconductor laser that beam is closed in space again.Beam module, reflecting mirror, polarization coupling element, wavelength coupling element are closed including level spatial.Level spatial closes beam module and carries out space conjunction beam to one group of semiconductor laser single tube using the structure of step or non-step.The light beam that two level spatials close the output of beam module first carries out wavelength coupling (or first carrying out polarization coupling with reflecting mirror and polarization coupling element) composition second level module with reflecting mirror and wavelength coupling element, latter two right second level module carries out polarization coupling (or carrying out wavelength coupling with reflecting mirror and wavelength coupling element again) composition 3-level module with reflecting mirror and polarization coupling element again, two or more last 3-level modules carry out space again and close beam.Semiconductor laser of the invention, which closes binding structure, to carry out conjunction beam to more semiconductor laser single tubes, have higher output power.
Description
Technical field
The present invention relates to semiconductor lasers to close beam field, in particular to a kind of first wavelength coupling and polarization coupling space again
The semiconductor laser for closing beam closes binding structure.
Background technique
Semiconductor laser has the advantages that electrical efficiency height, compact dimensions, at low cost and high reliablity.However single
The output power of semiconductor laser single tube is relatively low, generally requires to carry out conjunction beam to the light beam of multiple semiconductor laser single tubes
To obtain higher power.Common beam technology of closing has: beam, wavelength coupling etc., having after closing beam are closed in polarization coupling, space
The light beam of higher power can be used for pumped optical fibre laser in coupled into optical fibres, it can also be used to directly process.
Existing semiconductor laser closes in beam technology, and light beam first carries out space conjunction beam and carries out polarization coupling again.Fig. 1, Fig. 2
The structural schematic diagram of beam technology is closed for existing semiconductor laser, level spatial closes in beam module (7) to swash comprising one group of semiconductor
Light device single tube (1), the light beam (5) that semiconductor laser single tube (1) issues pass through fast axis collimation lens (2) and slow axis collimation lens
(3) it collimates, then is reflected by small reflector (4), stepped plate (6) generates suitable difference in height to one group of semiconductor laser single tube
(1) light beam (5) issued carries out space and closes beam, and two level spatials close beam module (7) and carry out space conjunction using reflecting mirror (10)
Beam, then two pairs of level spatials close beam module (7) and carry out polarization coupling using reflecting mirror (10) and polarization coupling element (11) again.
Polarization coupling element has born the output power that 4 level spatials close beam module (7), and wavelength coupling element (12) is difficult to
It bears 8 level spatials and closes the output power of beam module (7), therefore cannot be further continued for carrying out wavelength coupling.This disadvantage is one
Determine to limit the extension of power in degree.
Summary of the invention
In view of the above-mentioned problems, the purpose of the present invention is to provide a kind of semiconductor lasers to close binding structure, further to expand
Open up the power of semiconductor laser.
The invention adopts the following technical scheme:
A kind of semiconductor laser conjunction binding structure, including level spatial close beam module, reflecting mirror, polarization coupling element, wave
It is long to close beam element.
Level spatial closes beam module and carries out space conjunction beam to the light beam that one group of semiconductor laser single tube issues.Two level-ones
The light beam reflecting mirror of beam module output is closed in space and wavelength coupling element carries out wavelength coupling composition second level module, it is right latter two
Second level module carries out polarization coupling composition 3-level module, two or more last three-level moulds with reflecting mirror and polarization coupling element again
Block carries out space again and closes beam.
Or the light beam reflecting mirror and polarization coupling element that can be exported using two level spatials conjunction beam modules are carried out
Polarization coupling forms second level module, latter two right second level module carries out wavelength coupling composition with reflecting mirror and wavelength coupling element again
3-level module, two or more last 3-level modules carry out space again and close beam.
When level spatial closes the light beam progress space conjunction beam that beam module issues one group of semiconductor laser single tube, it can adopt
Suitable difference in height is generated with stepped plate and carries out space conjunction beam, or could be used without the structure progress space conjunction beam of step.
It is closed in beam module in level spatial, the light beam that semiconductor laser single tube issues can be with fast axis collimation lens to fast
Axis direction is collimated, and is collimated with slow axis collimation lens to slow-axis direction, is reflected with small reflector.
Polarization coupling element can use polarizing beam splitter mirror, polarizing cube or other polarization selection elements.
Wavelength coupling element can use optical filter equiwavelength selection element.
The wavelength coupling element that can bear power limited and polarization coupling element are placed in and close beam process by structure of the invention
In earlier step, beam is closed using space finally, to close beam three using wavelength coupling, polarization coupling, space simultaneously
Kind closes beam mode.Structure of the invention can carry out conjunction beam to more semiconductor laser single tubes, have higher output power.
Detailed description of the invention
Fig. 1 is the structural schematic diagram that level spatial closes beam module；
Fig. 2 is the structural schematic diagram that existing semiconductor laser closes beam technology；
Fig. 3 is the top view that existing semiconductor laser closes beam technology；
Fig. 4 is a schematic structural view of Embodiment 1 of the present invention；
Fig. 5 is the top view of the embodiment of the present invention 1；
Fig. 6 is a schematic structural view of Embodiment 2 of the present invention；
Fig. 7 is the top view of the embodiment of the present invention 2；
In figure: 1 is semiconductor laser single tube, and 2 fast axis collimation lens, 3 be slow axis collimation lens, and 4 be small reflector, 5
It is stepped plate for light beam, 6,7 close beam module for level spatial, and 8 be second level module, and 9 be 3-level module, and 10 be reflecting mirror, and 11 are
Polarization coupling element, 12 be wavelength coupling element.
Specific embodiment
Embodiment 1
As shown in Figure 1, be placed on 1 stepped plate (6) 10 semiconductor laser single tubes (1) and it is corresponding 10 it is fast
Axis collimation lens (2), 10 slow axis collimation lenses (3), 10 small reflectors (4).The light that semiconductor laser single tube (1) issues
Beam (5) is collimated by fast axis collimation lens (2) and slow axis collimation lens (3), then is reflected by small reflector (4).Stepped plate (6)
Difference in height is designed to suitable height, and the light beam (5) after reflecting small reflector (4) is able to carry out space and closes beam, to constitute
Level spatial closes beam module (7).
As shown in figure 4, wavelength coupling element (12) uses optical filter, reflected using 1 wavelength coupling element (12) and 1
Mirror (10) closes beam module (7) to 2 level spatials and carries out wavelength coupling, constitutes second level module (8).
Polarization coupling element (11) uses polarizing beam splitter mirror.Use 1 polarization coupling element (11) and 1 reflecting mirror (10)
Polarization coupling is carried out to 2 second level modules (8), is constituted 3-level module (9).
2 3-level modules (9) carry out space and close beam, close three kinds of modes of beam eventually by wavelength coupling, polarization coupling, space
Conjunction beam is carried out to up to 80 semiconductor laser single tubes.
Embodiment 2
Itself the difference from embodiment 1 is that, 2 level spatials close the light beam of beam module (7) by 1 polarization coupling element
(11) and 1 reflecting mirror (10) carries out polarization coupling, constitutes second level module (8).Then the light beam of 2 second level modules (8) is by 1
Wavelength coupling element (12) and 1 reflecting mirror (10) carry out wavelength coupling, constitute 3-level module (9), 2 3-level modules (9) into
Beam is closed in row space, closes three kinds of modes of beam to up to 80 semiconductor laser lists eventually by wavelength coupling, polarization coupling, space
Pipe carries out conjunction beam.
Claims (4)
1. a kind of semiconductor laser closes binding structure, including level spatial closes beam module (7), reflecting mirror (10), polarization coupling member
Part (11), wavelength coupling element (12), level spatial close the light that beam module (7) issue one group of semiconductor laser single tube (1)
Beam (5) carries out space and closes beam, which is characterized in that two level spatials close beam module (7) output light beam reflecting mirror (10) and
Wavelength coupling element (12) carries out wavelength coupling composition second level module (8), and two second level modules (8) are again with reflecting mirror (10) and inclined
Vibration closes beam element (11) and carries out polarization coupling composition 3-level module (9), two or more last 3-level modules (9) carry out space again
Close beam；Or two level spatials close the light beam that beam module (7) export and are carried out partially with reflecting mirror (10) and polarization coupling element (11)
Shu Zucheng second level module (8) are closed in vibration, and two second level modules (8) carry out wavelength with reflecting mirror (10) and wavelength coupling element (12) again
It closes Shu Zucheng 3-level module (9), two or more last 3-level modules (9) carry out space again and close beam.
2. semiconductor laser according to claim 1 closes binding structure, which is characterized in that level spatial closes beam module (7)
When carrying out space conjunction beam to the light beam (5) that one group of semiconductor laser single tube (1) issues, conjunction can be generated using stepped plate (6)
Suitable difference in height carries out space and closes beam, or could be used without the structure progress space conjunction beam of step.
3. semiconductor laser according to claim 1 closes binding structure, which is characterized in that polarization coupling element (11) can be with
Using polarizing beam splitter mirror, polarizing cube or other polarization selection elements.
4. semiconductor laser according to claim 1 closes binding structure, which is characterized in that wavelength coupling element (12) can be with
Using optical filter equiwavelength's selection element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811337223.1A CN109273986A (en) | 2018-11-12 | 2018-11-12 | A kind of semiconductor laser conjunction binding structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811337223.1A CN109273986A (en) | 2018-11-12 | 2018-11-12 | A kind of semiconductor laser conjunction binding structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109273986A true CN109273986A (en) | 2019-01-25 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201811337223.1A Pending CN109273986A (en) | 2018-11-12 | 2018-11-12 | A kind of semiconductor laser conjunction binding structure |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112260063A (en) * | 2020-10-20 | 2021-01-22 | 北京凯普林光电科技股份有限公司 | Single-tube space beam combining device of semiconductor laser |
| CN112436382A (en) * | 2021-01-26 | 2021-03-02 | 深圳市星汉激光科技股份有限公司 | High-power semiconductor laser |
| CN113794108A (en) * | 2021-08-04 | 2021-12-14 | 大族激光科技产业集团股份有限公司 | Optical fiber coupling semiconductor laser |
| CN114006269A (en) * | 2021-12-29 | 2022-02-01 | 深圳市星汉激光科技股份有限公司 | Direct output system of high-power semiconductor laser and polarization beam combining structure thereof |
| CN115016132A (en) * | 2022-08-09 | 2022-09-06 | 苏州镭陌科技有限公司 | Modular beam combining device suitable for high-power laser |
| CN116093744A (en) * | 2023-01-06 | 2023-05-09 | 东莞方孺光电科技有限公司 | Dual-wavelength laser beam combining device based on wavelength beam combining and polarization beam combining |
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| JP2003103389A (en) * | 2001-09-27 | 2003-04-08 | Toyoda Mach Works Ltd | Converging device for semiconductor laser beam |
| CN103532015A (en) * | 2013-10-29 | 2014-01-22 | 西安炬光科技有限公司 | High-power semiconductor laser light source system for laser processing |
| CN104007558A (en) * | 2014-05-07 | 2014-08-27 | 武汉锐科光纤激光器技术有限责任公司 | Semiconductor laser polarization beam combining device and coupling method |
| CN206323003U (en) * | 2016-12-02 | 2017-07-11 | 天津凯普林光电科技有限公司 | A kind of semiconductor laser beam merging apparatus |
| CN206741106U (en) * | 2017-05-27 | 2017-12-12 | 北京凯普林光电科技股份有限公司 | A kind of semiconductor laser beam merging apparatus |
| CN207009893U (en) * | 2017-07-13 | 2018-02-13 | 中国科学院半导体研究所 | The multitube beam merging apparatus of single-tube semiconductor laser |
-
2018
- 2018-11-12 CN CN201811337223.1A patent/CN109273986A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003103389A (en) * | 2001-09-27 | 2003-04-08 | Toyoda Mach Works Ltd | Converging device for semiconductor laser beam |
| CN103532015A (en) * | 2013-10-29 | 2014-01-22 | 西安炬光科技有限公司 | High-power semiconductor laser light source system for laser processing |
| CN104007558A (en) * | 2014-05-07 | 2014-08-27 | 武汉锐科光纤激光器技术有限责任公司 | Semiconductor laser polarization beam combining device and coupling method |
| CN206323003U (en) * | 2016-12-02 | 2017-07-11 | 天津凯普林光电科技有限公司 | A kind of semiconductor laser beam merging apparatus |
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| CN207009893U (en) * | 2017-07-13 | 2018-02-13 | 中国科学院半导体研究所 | The multitube beam merging apparatus of single-tube semiconductor laser |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112260063A (en) * | 2020-10-20 | 2021-01-22 | 北京凯普林光电科技股份有限公司 | Single-tube space beam combining device of semiconductor laser |
| CN112436382A (en) * | 2021-01-26 | 2021-03-02 | 深圳市星汉激光科技股份有限公司 | High-power semiconductor laser |
| CN113794108A (en) * | 2021-08-04 | 2021-12-14 | 大族激光科技产业集团股份有限公司 | Optical fiber coupling semiconductor laser |
| CN114006269A (en) * | 2021-12-29 | 2022-02-01 | 深圳市星汉激光科技股份有限公司 | Direct output system of high-power semiconductor laser and polarization beam combining structure thereof |
| CN115016132A (en) * | 2022-08-09 | 2022-09-06 | 苏州镭陌科技有限公司 | Modular beam combining device suitable for high-power laser |
| CN116093744A (en) * | 2023-01-06 | 2023-05-09 | 东莞方孺光电科技有限公司 | Dual-wavelength laser beam combining device based on wavelength beam combining and polarization beam combining |
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Application publication date: 20190125 |