CN206741106U - A kind of semiconductor laser beam merging apparatus - Google Patents
A kind of semiconductor laser beam merging apparatus Download PDFInfo
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- CN206741106U CN206741106U CN201720615068.XU CN201720615068U CN206741106U CN 206741106 U CN206741106 U CN 206741106U CN 201720615068 U CN201720615068 U CN 201720615068U CN 206741106 U CN206741106 U CN 206741106U
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Abstract
The utility model belongs to semiconductor laser beam and closes beam technical field, more particularly to a kind of semiconductor laser beam merging apparatus.Including cooled plate, there is the hole passed through for light beam in the cooled plate of T-type structure, first group of semiconductor laser sends light beam and propagated in the x-direction, and the light beam edge _ y directions that second group of semiconductor laser is sent are propagated and turned to by 45 ° of small reflectors and propagated side by side with the light beam with first group of semiconductor laser output.The light beam and the light beam of second group of semiconductor laser output that first group of semiconductor laser exports pass through the small steering reflection mirror being inclined by behind the hole passed through for light beam to turn to, and the formation direction of propagation stacks parallel to the light beam of the angular spread with design of yz planes.Light beam is stacked after the big steering reflection mirror being inclined by turns to and exported along the direction parallel to x-axis.The utility model does not need the compact structure of stepped plate, is advantageous to improve the uniformity of water cooling and reduces system bulk.
Description
Technical field
The utility model belongs to semiconductor laser beam and closes beam technical field, and more particularly to a kind of semiconductor laser closes
Bundle device.
Background technology
Semiconductor laser has the advantages of low efficiency high, compact-sized, cost and high reliability.But single partly lead
Body laser single tube power output is relatively low, and it is to obtain high-power side that the light beams of multiple semiconductor laser single tubes, which is carried out closing beam,
Method.Common conjunction beam technology includes：Close beam, wavelength coupling, polarization coupling etc. in space.Beam is closed by space in the prior art to obtain
High power is obtained to be adjusted, it is necessary to which multiple semiconductor laser single tubes are arranged in cooled plate.However, semiconductor laser leads to
Often need to be placed on different upright positions, to stack light beam, often to may require that stepped plate.As shown in figure 1, multiple semiconductors swash
Light device single tube is arranged on each ladder of stepped plate 1, and the light beam of each semiconductor laser single tube passes through fast axis collimation lens 3 and slow
Axle collimation lens 4 is collimated, then is turned to through speculum 5.Not only water cooling is uneven for this structure, and volume is larger.
Utility model content
In view of the above-mentioned problems, the purpose of this utility model is to provide a kind of semiconductor laser beam merging apparatus.The device
Arranged in T-shaped cooled plate multiple semiconductor laser single tubes, have small volume, it is in light weight, save water cooling plate material, reduce into
This advantages of.
To achieve these goals, the utility model uses following technical scheme：
A kind of semiconductor laser beam merging apparatus, including cooled plate, first group of semiconductor laser, second group of semiconductor swash
Light device, first group of fast axis collimation lens, second group of fast axis collimation lens, first group of slow axis collimation lens, second group of slow axis collimation
Lens, 45 ° of small reflectors, small steering reflection mirror and big steering reflection mirror, wherein,
The cooled plate is T-type structure, is passed through in the horizontal direction provided with multiple for light beam on the vertical plate of the cooled plate
Hole；
First group of semiconductor laser is placed with one horizontal plane of the cooled plate and is swashed with first group of semiconductor
First group of corresponding fast axis collimation lens of light device and first group of slow axis collimation lens, the light of first group of semiconductor laser output
Beam passes through the hole passed through for light beam after being collimated by first group of fast axis collimation lens and first group of slow axis collimation lens；
Be placed with the vertical plane of the cooled plate second group of semiconductor laser and with second group of semiconductor laser
Second group of corresponding fast axis collimation lens of device, second group of slow axis collimation lens and 45 ° of small reflectors, second group of semiconductor laser
After the light beam of device output is collimated by second group of fast axis collimation lens and second group of slow axis collimation lens, then by 45 ° of small reflections
The hole passed through for light beam is passed through after mirror reflection；
The small steering reflection mirror is multiple and be obliquely installed on the horizontal plane of the cooled plate, the small steering
Speculum be used for the steering of the light beam of first group of semiconductor laser output and the light beam of second group of semiconductor laser output and
Light beam is stacked on big steering reflection mirror；
The big steering reflection mirror is obliquely installed, for stacking the steering and output of light beam.
First group of semiconductor laser and second group of semiconductor laser arrange along Z-direction, and adjacent partly lead
Spacing between body laser is equal.
The light beam of first group of semiconductor laser output is propagated in the x-direction, and second group of semiconductor laser is defeated
The light beam that the light beam gone out is propagated along-y directions and exported after being reflected by 45 ° of small reflectors with first group of semiconductor laser is side by side
Propagate.
The direction of the big steering reflection mirror transmitting beam is parallel with x-axis.
Spacing between the two neighboring small steering reflection mirror is equal, each small steering reflection mirror in the x-direction with z side
To offset it is equal.
Upper offset is -0.87287mm to each small steering reflection mirror in the x-direction, and offset is 5mm on z directions, described
The mirror normal of small steering reflection mirror and y-axis angle are 73.57 °, and projection of the mirror normal in x-z-plane is with z-axis angle
47.4943°。
The direction of propagation of the small steering reflection mirror and the angle of z-axis are 23.5782 °.
The advantages of the utility model and beneficial effect are：To send the uniformity of water cooling and reducing system bulk, this practicality
A kind of structure for multiple semiconductor laser single tubes of being arranged in T-shaped cooled plate of new offer.And put using specific direction
Small reflector formed a line come the light beam for sending multiple single tubes on quick shaft direction, it is not necessary to stepped plate, set so as to reduce
Standby volume, mitigate weight of equipment, save water cooling plate material, reduce cost.
Brief description of the drawings
Fig. 1 is the structural representation of prior art；
Fig. 2 is one of structural representation of the present utility model；
Fig. 3 is the two of structural representation of the present utility model；
Fig. 4 is the three of structural representation of the present utility model；
Fig. 5 is front view of the present utility model；
Fig. 6 is top view of the present utility model.
In figure：110 be cooled plate, and 112 be the hole passed through for light beam, and 112.1-11.5 passes through for first to the 5th for light beam
Hole, 120.1 be first group of semiconductor laser, and 120.1.1-120.1.5 is the first to the 5th semiconductor laser in first group
Device, 120.2 be second group of semiconductor laser, and 120.2.1-120.2.5 is the first to the 5th semiconductor laser in second group,
130.1 be the light beam of first group of semiconductor laser output, and 130.1.1-130.1.5 is first group of semiconductor laser output
First to the 5th light beam, 130.2 be the light beam of second group of semiconductor laser output, and 130.2.1-130.2.5 is second group Ban
First to the 5th light beam of conductor laser output, 154.1 be first group of fast axis collimation lens, 154.1.1-154.1.5 the
First to the 5th fast axis collimation lens in one group, 154.2 be second group of fast axis collimation lens, 154.2.1-154.2.5 second
First to the 5th fast axis collimation lens in group, 158.1 be first group of slow axis collimation lens, and 158.1.1-158.1.5 is first group
In the first to the 5th slow axis collimation lens, 158.2 be second group of slow axis collimation lens, and 158.2.1-158.2.5 is in second group
First to the 5th slow axis collimation lens, 160.2 be 45 ° of small reflectors, and 160.2.1-160.2.5 is first to the 5th 45 ° small anti-
Mirror is penetrated, 162 be small steering reflection mirror, and 162.1-162.5 is the first to the 5th small steering reflection mirror, and 166 be big steering reflection mirror.
Embodiment
In order that the purpose of this utility model, technical scheme and advantage are clearer, below in conjunction with the accompanying drawings and it is embodied
The utility model is described in detail example.
As shown in figures 1 to 6, a kind of semiconductor laser beam merging apparatus provided by the utility model, including cooled plate 110,
One group of 120.1, second groups of semiconductor laser, 120.2, first groups of semiconductor laser, 154.1, second groups of fast axis collimation lens
154.2, first groups of fast axis collimation lens, 158.1, second groups of slow axis collimation lens, 158.2,45 ° of small reflectors of slow axis collimation lens
160.2nd, small steering reflection mirror 162 and big steering reflection mirror 166, wherein cooled plate 110 are T-type structure, cooled plate 110 it is vertical
Multiple holes 112 passed through for light beam, first group of semiconductor laser 120.1 and second group of semiconductor are provided with plate in the horizontal direction
Laser 120.2 is located at the same side of cooled plate 110, and small steering reflection mirror 162 and big steering reflection mirror 166 are located at cooled plate
110 opposite side.
First group of semiconductor laser 120.1 is placed with one horizontal plane of cooled plate 110 and is swashed with first group of semiconductor
First group of corresponding fast axis collimation lens 154.1 of light device 120.1 and first group of slow axis collimation lens 158.1, first group is partly led
The light beam 130.1 of body laser output is carried out by first group of fast axis collimation lens 154.1 and first group of slow axis collimation lens 158.1
The hole 112 passed through for light beam is passed through after collimation.
Be placed with the vertical plane of cooled plate 110 second group of semiconductor laser 120.2 and with second group of semiconductor laser
Device 120.2 corresponding second group of fast axis collimation lens, 154.2, second groups of slow axis collimation lenses 158.2 and 45 ° of small reflectors
160.2, the light beam 130.2 of second group of semiconductor laser output is by second group of fast axis collimation lens 154.2 and second group of slow axis
After collimation lens 158.2 is collimated, then the hole 112 passed through for light beam is passed through after being reflected by 45 ° of small reflectors 160.2.
Small steering reflection mirror 162 is multiple and be obliquely installed on the horizontal plane of cooled plate 110, small steering reflection mirror
The light beam 130.2 that 162 light beams 130.1 exported for first group of semiconductor laser and second group of semiconductor laser export
Turn to and light beam is stacked on big steering reflection mirror 166.Big steering reflection mirror 166 is obliquely installed, for stacking turning for light beam
To and output.
First group of semiconductor laser 120.1 and second group of semiconductor laser 120.2 arrange along Z-direction, and phase
Spacing between adjacent semiconductor laser is equal.
The light beam 130.1 of first group of semiconductor laser output is propagated in the x-direction, what second group of semiconductor laser exported
The light that light beam 130.2 is propagated along-y directions and exported after being reflected by 45 ° of small reflectors 160.2 with first group of semiconductor laser
Beam 130.1 is propagated side by side.
Spacing between two neighboring small steering reflection mirror 162 is equal, each small steering reflection mirror 162 in the x-direction with z directions
Offset it is equal.The direction of the big transmitting beam of steering reflection mirror 166 is parallel with x-axis.
Embodiment
First group of semiconductor laser 120.1 being placed with the horizontal plane of cooled plate 110 includes first along z-axis arrangement
To the 5th semiconductor laser 120.1.1-120.1.5, spacing 5mm.First to the 5th semiconductor laser in first group
120.1.1-20.1.5 the light beam sent, i.e., the first to the 5th light beam 130.1.1- of first group semiconductor laser output
130.1.5 propagate in the x-direction.Along the z-axis direction, quick shaft direction is along y-axis side for the slow-axis direction of the light beam of each semiconductor laser
To.Each semiconductor laser have corresponding to the first to the 5th fast axis collimation lens 154.1.1-154.1.5 and the in first group
First to the 5th slow axis collimation lens 158.1.1-158.1.5 in one group.
The second group of semiconductor laser 120.2 arranged on vertical plane includes five semiconductor lasers arranged along z-axis,
First to the 5th semiconductor laser 120.2.1-120.2.5, spacing 5mm in i.e. second group.
The light beam that the first to the 5th semiconductor laser 120.2.1-120.2.5 is sent in second group, i.e., second group is partly led
First to the 5th light beam 130.2.1-130.2.5 of body laser output propagates along-y directions, the light of each semiconductor laser
Along the z-axis direction, quick shaft direction is along the x-axis direction for the slow-axis direction of beam.Each semiconductor laser have corresponding to first in second group
The first to the 5th slow axis collimation lens 158.2.1- into the 5th fast axis collimation lens 154.2.1-154.2.5 and second group
158.2.5。
Inclined small steering reflection mirror 162 is long 5mm, high 3mm rectangle.The minute surface of inclined small steering reflection mirror 162
Normal and y-axis angle are 73.57 °.Projection of the mirror normal in x-z-plane and z-axis angle are 47.4943 °.It is corresponding first group
In the first semiconductor laser 120.1.1 the first small steering reflection mirror 162.1 four angles coordinate for (1.9066,1,
1.6438), (1.281, -1.8775,2.2171), (- 2.0973, -1.8775, -1.4689), (- 1.4718,1, -2.0423).
Inclined second to the 5th small steering reflection mirror 162.2-162.5 angles and the inclined first small steering reflection mirror 162.1
It is identical.Offset successively in the x direction, offset is -0.87287mm on x directions, and offset is 5mm on z directions.By first
First to the 5th light beam of first group of semiconductor laser output after being reflected to the 5th small reflector 162.1-162.5
130.1.1-130.1.5 the direction of propagation is in the plane parallel with y-z plane.The angle of the direction of propagation and z-axis is 23.5782 °.
First to the 5th light beam of first group of semiconductor laser output after the steering of excessive steering reflection mirror 166
130.1.1-130.1.5 the first to the 5th light beam 130.2.1-130.2.5 propagation sides exported with second group of semiconductor laser
To parallel with x-axis.
In summary, there are the hole 112 passed through for light beam, first group of semiconductor laser in the cooled plate 110 of T-type structure
120.1 send light beam, i.e., the light beam 130.1 of first group semiconductor laser output is propagated in the x-direction.Second group of semiconductor laser
The light beam that device 120.2 is sent, i.e., the light beam 130.2 of second group semiconductor laser output are propagated along-y directions and by 45 ° small anti-
Penetrate mirror 160.2 and turn to and propagated side by side with the light beam 130.1 with the output of first group of semiconductor laser.First group of semiconductor laser
The light beam 130.1 of output and the light beam 130.2 of second group of semiconductor laser output are inclined after passing through the hole 112 passed through for light beam
Oblique small steering reflection mirror 162 turns to, and the light beam for forming the direction of propagation parallel to the angular spread with design of yz planes stacks.
Light beam is stacked after the big steering reflection mirror 166 being inclined by turns to and exported along the direction parallel to x-axis.The utility model does not need rank
The compact structure of gangboard, be advantageous to improve the uniformity of water cooling and reduce system bulk.
Embodiment of the present utility model is the foregoing is only, is not intended to limit the scope of protection of the utility model.It is all
Made within spirit of the present utility model and principle any modification, equivalent substitution and improvements, extension etc., are all contained in this reality
With in new protection domain.
Claims (7)
1. a kind of semiconductor laser beam merging apparatus, it is characterised in that including cooled plate (110), first group of semiconductor laser
(120.1), second group of semiconductor laser (120.2), first group of fast axis collimation lens (154.1), second group of fast axis collimation are saturating
Mirror (154.2), first group of slow axis collimation lens (158.1), second group of slow axis collimation lens (158.2), 45 ° of small reflectors
(160.2), small steering reflection mirror (162) and big steering reflection mirror (166), wherein,
The cooled plate (110) is T-type structure, and light is supplied provided with multiple in the horizontal direction on the vertical plate of the cooled plate (110)
The hole (112) that beam passes through；
Be placed with one horizontal plane of the cooled plate (110) first group of semiconductor laser (120.1) and with described first group
First group of corresponding fast axis collimation lens (154.1) of semiconductor laser (120.1) and first group of slow axis collimation lens
(158.1), the light beam (130.1) of first group of semiconductor laser output is by first group of fast axis collimation lens (154.1) and first
Group slow axis collimation lens (158.1) passes through the hole (112) passed through for light beam after being collimated；
Be placed with the vertical plane of the cooled plate (110) second group of semiconductor laser (120.2) and with second group Ban
Second group of corresponding fast axis collimation lens (154.2) of conductor laser (120.2), second group of slow axis collimation lens (158.2)
And 45 ° of small reflectors (160.2), the light beam (130.2) of second group of semiconductor laser output is by second group of fast axis collimation lens
(154.2) pass through and after second group of slow axis collimation lens (158.2) collimated, then after being reflected by 45 ° of small reflectors (160.2)
The hole (112) passed through for light beam；
The small steering reflection mirror (162) be it is multiple and be obliquely installed on the horizontal plane of the cooled plate (110), it is described
Small steering reflection mirror (162) is used for the light beam (130.1) and second group of semiconductor laser of first group of semiconductor laser output
The steering of the light beam (130.2) of output and light beam is stacked on big steering reflection mirror (166)；
The big steering reflection mirror (166) is obliquely installed, for stacking the steering and output of light beam.
2. semiconductor laser beam merging apparatus according to claim 1, it is characterised in that first group of semiconductor laser
Device (120.1) and second group of semiconductor laser (120.2) arrange along Z-direction, and between adjacent semiconductor laser
Spacing is equal.
3. semiconductor laser beam merging apparatus according to claim 1, it is characterised in that first group of semiconductor laser
The light beam (130.1) of device output is propagated in the x-direction, light beam (130.2) edge-y sides of second group of semiconductor laser output
To the light beam (130.1) propagated and exported after 45 ° of small reflectors (160.2) reflections with first group of semiconductor laser side by side
Propagate.
4. semiconductor laser beam merging apparatus according to claim 1, it is characterised in that the big steering reflection mirror
(166) direction of transmitting beam is parallel with x-axis.
5. semiconductor laser beam merging apparatus according to claim 1, it is characterised in that the two neighboring small steering is anti-
The spacing penetrated between mirror (162) is equal, and each small steering reflection mirror (162) is equal with the offset in z directions in the x-direction.
6. semiconductor laser beam merging apparatus according to claim 5, it is characterised in that each small steering reflection mirror
(162) upper offset is -0.87287mm in the x-direction, and offset is 5mm on z directions, the mirror of the small steering reflection mirror (162)
Face normal and y-axis angle are 73.57 °, and projection of the mirror normal in x-z-plane and z-axis angle are 47.4943 °.
7. semiconductor laser beam merging apparatus according to claim 5, it is characterised in that the small steering reflection mirror
(162) the direction of propagation and the angle of z-axis is 23.5782 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720615068.XU CN206741106U (en) | 2017-05-27 | 2017-05-27 | A kind of semiconductor laser beam merging apparatus |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720615068.XU CN206741106U (en) | 2017-05-27 | 2017-05-27 | A kind of semiconductor laser beam merging apparatus |
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| CN206741106U true CN206741106U (en) | 2017-12-12 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109273986A (en) * | 2018-11-12 | 2019-01-25 | 北京热刺激光技术有限责任公司 | A kind of semiconductor laser conjunction binding structure |
| CN113206449A (en) * | 2021-04-21 | 2021-08-03 | 吉林省长光瑞思激光技术有限公司 | Semiconductor laser based on optics ladder distribution |
| WO2022140930A1 (en) * | 2020-12-28 | 2022-07-07 | 北京凯普林光电科技股份有限公司 | Semiconductor fiber laser assembly and fiber laser |
-
2017
- 2017-05-27 CN CN201720615068.XU patent/CN206741106U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109273986A (en) * | 2018-11-12 | 2019-01-25 | 北京热刺激光技术有限责任公司 | A kind of semiconductor laser conjunction binding structure |
| WO2022140930A1 (en) * | 2020-12-28 | 2022-07-07 | 北京凯普林光电科技股份有限公司 | Semiconductor fiber laser assembly and fiber laser |
| CN113206449A (en) * | 2021-04-21 | 2021-08-03 | 吉林省长光瑞思激光技术有限公司 | Semiconductor laser based on optics ladder distribution |
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