CN103944069A - High-power semiconductor laser beam combining device - Google Patents
High-power semiconductor laser beam combining device Download PDFInfo
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- CN103944069A CN103944069A CN201410195977.3A CN201410195977A CN103944069A CN 103944069 A CN103944069 A CN 103944069A CN 201410195977 A CN201410195977 A CN 201410195977A CN 103944069 A CN103944069 A CN 103944069A
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Abstract
The invention provides a high-power semiconductor laser beam combining device. A laser beam combining light source with fine uniformity and high energy density can be obtained. The device comprises a semiconductor laser stack, a collimation lens assembly and a beam combining system which are sequentially arranged along an optical path, the beam combining system comprises a reflection interval film mirror and a total reflection mirror, reflection films are plated on the lower surface of a plate lens to form the reflection interval film mirror, the number of the reflection films is half of that of semiconductor laser units, the space between every two reflection films is equal to the width of each reflection film, the reflection interval film mirror and the total reflection mirror correspond to the upper half portion and the lower half portion of the semiconductor laser stack respectively, beams emitted by the semiconductor laser units are respectively collimated by the collimation lens assembly and still kept equally spaced, beams emitted by the upper half portion are refracted twice by the reflection interval film mirror and then parallelly transmit, and beams emitted by the lower half portion are sequentially reflected twice by the total reflection mirror and the reflection films of the reflection interval film mirror and combined with the transmitting beams emitted by the upper half portion in a plug-in manner.
Description
Technical field
The invention belongs to laser application, be specifically related to a kind of high-power semiconductor laser beam merging apparatus.
Background technology
Semiconductor laser has advantages of that volume is little, lightweight, reliability is high, long service life, low in energy consumption, the every field that has been widely used at present national economy, but current semiconductor laser apply the restriction that is subject to its beam quality, so improve beam quality, brightness and the power of semiconductor laser, be instantly important research direction.
Swash combiner technology development in recent years rapid, it is the process improving beam quality, increase power output, improve power density.Swash combiner technology is used widely in laser processing and high-power optical-fiber coupling product.
Conventional sharp combiner method has polarization coupling at present, and wavelength closes bundle and bundle is closed in space.Common polarization coupling device is comprised of 1/2 slide and polarization splitting prism (PBS), and a part of laser becomes TM (or TM become TE) by polarization state from TE by 1/2 slide, then closes bundle with another part laser.Because the LASER Light Source degree of polarization of semiconductor laser is about 90%, the polarised light that the polarization state of sending such as semiconductor laser is TE generally comprises 90% TE polarised light and 10% TM polarised light, if therefore adopt polarization coupling, optical energy loss is larger, be only applicable to the bundle that closes of quick shaft direction, and output light is mixed polarized light, can not again carry out polarization coupling with other light sources; When using the folded battle array of semiconductor laser as light source, output facula still retains the luminous dead band between bar and bar, and the uniformity is poor.It is that the laser of different wave length closes bundle that wavelength closes bundle, but cannot apply in the occasion that requires laser to have single wavelength, makes it in application, have limitation.
Summary of the invention
In order to overcome the deficiencies in the prior art, the invention provides a kind of high-power semiconductor laser beam merging apparatus, can obtain good uniformity, laser that energy density is large closes light source beam.Scheme is as follows:
A kind of high-power semiconductor laser beam merging apparatus, comprise semiconductor laser stacks, the collimation lens set setting gradually along light path and close beam system, described semiconductor laser stacks forms by several semiconductor laser units are stacking, the described beam system that closes comprises a reflection interval rete mirror and a completely reflecting mirror, described reflection interval rete mirror is at the lower surface interval of flat-plate lens plating reflectance coating, the quantity of reflectance coating is half of semiconductor laser unit, and the spacing of reflectance coating equates with himself width; Reflection interval rete mirror and completely reflecting mirror be parallel to each other and and semiconductor laser stacks light direction be all between 30 °-60 ° and place, and correspond respectively to the first half and the latter half of the stacks as high of semiconductor laser stacks, it is equidistant that the light that each semiconductor laser unit sends still keeps after collimation lens set collimates respectively, the parallel transmission after twice refraction of reflection interval rete mirror of the light of the first half, the latter half is closed bundle with the transmitted light plug hole of the first half successively after completely reflecting mirror, reflection interval rete mirror reflectance coating carry out two secondary reflections.
Above-mentioned position of closing beam system meets following coordinate relation:
The semiconductor laser unit bright dipping optical axis bottom of semiconductor laser stacks the first half of take is X-axis, the joint of X-axis and reflection interval rete mirror is origin of coordinates O, Y direction is semiconductor laser stacks stacks as high direction, determines thus two-dimensional coordinate system; Semiconductor laser unit bright dipping optical axis bottom of semiconductor laser stacks the latter half and the minute surface joint coordinate of completely reflecting mirror are
Wherein, g is reflection interval rete mirror thickness, n is the refractive index of lens material, w is the beam separation that adjacent semiconductor laser cell sends, d is the beam diameter after semiconductor laser unit collimation, m is semiconductor laser unit number used, and α is the angle of reflection interval rete mirror and horizontal direction.
Basic principle based on same, the present invention also provides another kind of high-power semiconductor laser beam merging apparatus, comprise two groups of semiconductor laser stacks, collimation lens set and reflection interval rete mirror, described two groups of semiconductor laser stacks form by several semiconductor laser units are stacking respectively, wherein one group of semiconductor laser stacks along continuous straight runs bright dipping, another organizes vertically bright dipping, described reflection interval rete mirror is at the lower surface interval of flat-plate lens plating reflectance coating, the quantity of reflectance coating is half of semiconductor laser unit, the spacing of reflectance coating equates with himself width, reflection interval rete mirror and horizontal direction are between 30 °-60 ° places, the beam collimation that described one group of semiconductor laser stacks sends by twice refraction in reflectance coating gap of reflection interval rete mirror after horizontal transmission, described another group semiconductor laser stacks beam collimation of sending forms plug hole with the light beam of horizontal transmission after by the reflectance coating total reflection of reflection interval rete mirror and closes bundle.
Relative position between above-mentioned two groups of semiconductor laser stacks and reflection interval rete mirror meets following relation:
Described one group of semiconductor laser stacks semiconductor laser unit bright dipping optical axis is bottom X-axis, and the joint of X-axis and reflection interval rete mirror is origin of coordinates O, and Y direction is this semiconductor laser stacks stacks as high direction, determines thus reference axis; In described another group semiconductor laser stacks, with the bright dipping position coordinates of the nearest one group of semiconductor laser unit of described one group of semiconductor laser stacks be
Wherein, g is reflection interval rete mirror thickness, the refractive index that n is lens material, w is the beam separation that adjacent semiconductor laser cell sends, d is the beam diameter after semiconductor laser unit collimation, and θ is incidence angle radian, and α is the angle of reflection interval rete mirror and horizontal direction.
For above two schemes, can further do again following optimization and limit and improve:
The gap plating anti-reflection film of reflectance coating, plated film width meets following relation:
Wherein, d is the beam diameter after semiconductor laser unit collimation, and w is the beam separation that adjacent semiconductor laser cell sends, a anti-reflection film sector width, and b is reflectance coating sector width.
The above-mentioned beam system that closes is arranged on fixed mount according to coordinate relation, and the material of fixed mount is plastics, aluminium, steel or copper.
Above-mentioned semiconductor laser unit is the semiconductor laser chip being welded on heat sink, and described semiconductor laser chip is a single tube chip, mini bar or bar bar, or be a plurality of single tube chips, mini bar or cling to bar.
Above-mentioned collimation lens set comprises fast axis collimation lens and slow axis collimating lens, and wherein, fast axis collimation lens is collimation D type non-spherical lens, and slow axis collimating lens is single array cylindrical lens.
α value is 45 °.
The material of above-mentioned completely reflecting mirror is metal or glass, plated surface high-reflecting film; The material of high-reflecting film is argent or aluminium, or high-reflecting film adopts multilayer dielectric reflective coating.
The present invention has the following advantages:
1) close light source beam and have single polarization characteristic, the optical energy loss that closes beam system is low, has improved efficiency;
2) close bundle hot spot good uniformity, and can compress light-emitting area size, improve beam quality, energy density is large;
3) the laser beam merging apparatus in the present invention is all applicable at fast and slow axis;
4) when being one, LASER Light Source use technical scheme of the present invention exiting surface size can be reduced to half of former light-emitting area size, thereby reach the object that reduces light long-pending ginseng BPP (light-emitting area is multiplied by the angle of divergence), can improve beam quality, improve its output power density, make it be more conducive to application.
5) this laser beam merging apparatus processing raw material are simple, and first scheme saved completely reflecting mirror, further provide cost savings.
Accompanying drawing explanation
Fig. 1 (a) is a kind of high-power semiconductor laser beam merging apparatus principle schematic.
Fig. 1 (b) is for closing beam system putting position coordinate key diagram in this device.
Fig. 2 (a) is another kind of high-power semiconductor laser beam merging apparatus principle schematic.
Fig. 2 (b) is coordinate position key diagram in another kind of high-power semiconductor laser beam merging apparatus.
Fig. 3 is reflection interval rete mirror interval plated film schematic diagram.
Fig. 4 is the explanation of semiconductor laser stacks size marking.
Fig. 5 is twice refraction schematic diagram of reflection interval rete mirror.
Drawing reference numeral explanation: 1 is semiconductor laser stacks, and 2 is fast axis collimation lens, and 3 is slow axis collimating lens, and 4 is reflection interval rete mirror, and 5 is collimation lens set, and 6 is completely reflecting mirror, and 7 is anti-reflection film plated film district, and 8 is reflectance coating plated film district, and 9 for closing beam system; .
Embodiment
Below in conjunction with example and accompanying drawing, the solution of the present invention is described further.
Embodiment mono-
Fig. 1 (a) is the embodiment of a kind of high-power semiconductor laser beam merging apparatus of the present invention, a kind of high-power semiconductor laser beam merging apparatus comprises the semiconductor laser stacks 1 setting gradually along light path, collimation lens set 5 and close beam system 9, described semiconductor laser stacks 1 forms by several semiconductor laser units are stacking, the described beam system 9 that closes comprises a reflection interval rete mirror 4 and a completely reflecting mirror 6, described reflection interval rete mirror 4 is at the lower surface interval of flat-plate lens plating reflectance coating, the quantity of reflectance coating is half of semiconductor laser unit, the spacing of reflectance coating equates with himself width, reflection interval rete mirror 4 can become 30-60 ° of setting with completely reflecting mirror 6 with semiconductor laser stacks 1 light direction, and correspond respectively to the first half and the latter half of the stacks as high of semiconductor laser stacks 1, what in Fig. 1 (a), select is 45 ° of placements, the light that each semiconductor laser unit sends still keeps equidistant after collimation lens set 5 collimates respectively, the parallel transmission after 4 twice refraction of reflection interval rete mirror of the light of the first half, the latter half is successively through completely reflecting mirror 6, reflection interval rete mirror 4 reflectance coatings carry out closing bundle with the transmitted light plug hole of the first half after two secondary reflections.
The position of closing beam system as described in Fig. 1 (b) meets following coordinate relation:
The semiconductor laser unit bright dipping optical axis bottom of semiconductor laser stacks the first half of take is X-axis, the joint of X-axis and reflection interval rete mirror is origin of coordinates O, Y direction is semiconductor laser stacks stacks as high direction, determines thus two-dimensional coordinate system; Semiconductor laser unit bright dipping optical axis bottom of semiconductor laser stacks the latter half and the minute surface joint Q coordinate of completely reflecting mirror are
When reflection interval rete mirror and completely reflecting mirror and semiconductor laser stacks light direction are 45 ° while arranging, coordinate need meet:
Wherein, g is reflection interval rete mirror thickness, the refractive index that n is lens material, and w is the beam separation that adjacent semiconductor laser cell sends, and d is the beam diameter after semiconductor laser unit collimation, and m is semiconductor laser unit number used.
The material of above-mentioned reflection interval rete mirror is glass, and at the lower surface interval of lens plating reflectance coating, and at reflectance coating interval plating anti-reflection film, the width such as anti-reflection film and reflectance coating are spaced and quantity equates, the plated film quantity of anti-reflection film or reflectance coating is m/2.As shown in Figure 3, plated film width a and b meet following relation:
When reflection interval rete mirror and completely reflecting mirror and semiconductor laser stacks light direction are 45 ° while arranging:
And a=b, w>d
Wherein d is the beam diameter after semiconductor laser unit collimation, a anti-reflection film sector width, and b is reflectance coating sector width; As shown in Figure 5, laser beam enters anti-reflection reflection interval rete mirror can there is 2 refractions, and the vertical displacement of emergent light and incident light is
Wherein, θ is incident angle radian.
Fig. 1 (a) is semiconductor laser beam merging apparatus light path schematic diagram of the present invention, and Fig. 3 is anti-reflection film and the reflectance coating interval plated film schematic diagram of reflection interval rete mirror.As shown in Figure 1, the laser that semiconductor laser stacks 1 sends is divided into two parts after collimating by collimation lens set 5, the first half enters to inject reflection interval rete mirror 4 through 2 refraction Hou Cong antireflective coating district 7 parallel outgoing, uniform after the laser of the latter half closes bundle with the transmitted light plug hole of the first half after the secondary reflection in the reflective coating district 8 of completely reflecting mirror 6 and reflection interval rete mirror 4, emergent light energy density is 2 times of incident optical energy metric density, emergent light spot diameter is that semiconductor laser stacks sends half of laser beam diameter, exiting surface size is reduced to half of former light-emitting area size, thereby reach the object that reduces light long-pending ginseng BPP (light-emitting area is multiplied by the angle of divergence), can improve beam quality, improve its output power density, make it be more conducive to application.
Semiconductor laser unit is the semiconductor laser chip being welded on heat sink, and described semiconductor laser chip is a single tube chip, mini bar or bar bar, or be a plurality of single tube chips, mini bar or cling to bar.
Collimation lens set comprises fast axis collimation lens and slow axis collimating lens, and wherein, fast axis collimation lens can be collimation D type non-spherical lens; Slow axis collimating lens is single array cylindrical lens.
The basis material of completely reflecting mirror is glass or metal, when the material of completely reflecting mirror is metal, can select metallic copper, metallic aluminium, metallic aluminium alloy or stainless steel material, plated surface high-reflecting film, the material of high-reflecting film is argent or metallic gold, or other have the reflectance coating of high emission effect; Or high-reflecting film adopts multilayer dielectric reflective coating, and multilayer dielectric reflective coating material plates TiO successively for selecting
2and SiO
2or other multilayer dielectric reflective coating materials.
Close beam system and be arranged on fixed mount according to coordinate relation, the material of fixed mount can be plastics, aluminium, steel or copper.
Based on structure shown in Fig. 1, the angle of reflection interval rete mirror and completely reflecting mirror and semiconductor laser stacks light direction is also not limited to 45 °, also can 30-60 °, can select 35 °, 55 ° etc.
Embodiment bis-
The embodiment that Fig. 2 (a) is the another kind of high-power semiconductor laser beam merging apparatus that designs in the present invention, a kind of high-power semiconductor laser beam merging apparatus comprises two groups of semiconductor laser stacks 1, collimation lens set 5 and reflection interval rete mirror 4, described two groups of semiconductor laser stacks 1 form by several semiconductor laser units are stacking respectively, wherein one group of semiconductor laser stacks along continuous straight runs bright dipping, another organizes vertically bright dipping; Described reflection interval rete mirror 4 is at the lower surface interval of flat-plate lens plating reflectance coating, the quantity of reflectance coating is half of semiconductor laser unit, the spacing of reflectance coating equates with himself width, reflection interval rete mirror and horizontal direction are between 30 °-60 ° places, light beam horizontal transmission after twice refraction in the reflectance coating gap of reflection interval rete mirror that described one group of semiconductor laser stacks sends, the light beam that described another group semiconductor laser stacks sends closes bundle with the light beam formation plug hole of horizontal transmission after the reflectance coating total reflection of reflection interval rete mirror.
As shown in Fig. 2 (b), the relative position between two groups of semiconductor laser stacks and reflection interval rete mirror meets following relation:
One group of semiconductor laser stacks of described horizontal positioned semiconductor laser unit bright dipping optical axis is bottom X-axis, the joint of X-axis and reflection interval rete mirror is origin of coordinates O, Y direction is this semiconductor laser stacks stacks as high direction, determines thus reference axis; In described another group semiconductor laser stacks, with the bright dipping position coordinates of the nearest one group of semiconductor laser unit of described one group of semiconductor laser stacks be
When reflection interval rete mirror and semiconductor laser stacks light direction are 45 ° while arranging, the bright dipping position coordinates of described semiconductor laser unit need meet:
Wherein, g is reflection interval rete mirror thickness, the refractive index that n is lens material, w is the beam separation that adjacent semiconductor laser cell sends, d is the beam diameter after semiconductor laser unit collimation, and θ is incidence angle radian, and α is the angle of reflection interval rete mirror and horizontal direction.
Based on structure shown in Fig. 2, the angle of the semiconductor laser stacks light direction of reflection interval rete mirror and horizontal positioned is also not limited to 45 °, also can 30-60 °, can select 35 °, 55 ° etc.
This beam merging apparatus principle and front a kind of beam merging apparatus are similar, just adopt two groups of semiconductor laser stacks as LASER Light Source, and close in beam system, save completely reflecting mirror, have dwindled the volume of beam merging apparatus and have saved raw material and cost.
Claims (10)
1. a high-power semiconductor laser beam merging apparatus, it is characterized in that: comprise semiconductor laser stacks, the collimation lens set setting gradually along light path and close beam system, described semiconductor laser stacks forms by several semiconductor laser units are stacking, the described beam system that closes comprises a reflection interval rete mirror and a completely reflecting mirror, described reflection interval rete mirror is at the lower surface interval of flat-plate lens plating reflectance coating, the quantity of reflectance coating is half of semiconductor laser unit, and the spacing of reflectance coating equates with himself width; Reflection interval rete mirror and completely reflecting mirror be parallel to each other and and semiconductor laser stacks light direction be all between 30 °-60 ° and place, and correspond respectively to the first half and the latter half of the stacks as high of semiconductor laser stacks, it is equidistant that the light that each semiconductor laser unit sends still keeps after collimation lens set collimates respectively, the parallel transmission after twice refraction of reflection interval rete mirror of the light of the first half, the latter half is closed bundle with the transmitted light plug hole of the first half successively after completely reflecting mirror, reflection interval rete mirror reflectance coating carry out two secondary reflections.
2. high-power semiconductor laser beam merging apparatus according to claim 1, is characterized in that, described in close beam system position meet following coordinate relation:
The semiconductor laser unit bright dipping optical axis bottom of semiconductor laser stacks the first half of take is X-axis, the joint of X-axis and reflection interval rete mirror is origin of coordinates O, Y direction is semiconductor laser stacks stacks as high direction, determines thus two-dimensional coordinate system; Semiconductor laser unit bright dipping optical axis bottom of semiconductor laser stacks the latter half and the minute surface joint coordinate of completely reflecting mirror are
Wherein, g is reflection interval rete mirror thickness, n is the refractive index of lens material, w is the beam separation that adjacent semiconductor laser cell sends, d is the beam diameter after semiconductor laser unit collimation, m is semiconductor laser unit number used, and α is the angle of reflection interval rete mirror and horizontal direction.
3. a high-power semiconductor laser beam merging apparatus, comprise two groups of semiconductor laser stacks, collimation lens set and reflection interval rete mirror, described two groups of semiconductor laser stacks form by several semiconductor laser units are stacking respectively, wherein one group of semiconductor laser stacks along continuous straight runs bright dipping, another organizes vertically bright dipping, described reflection interval rete mirror is at the lower surface interval of flat-plate lens plating reflectance coating, the quantity of reflectance coating is half of semiconductor laser unit, the spacing of reflectance coating equates with himself width, reflection interval rete mirror and horizontal direction are between 30 °-60 ° places, the beam collimation that described one group of semiconductor laser stacks sends by twice refraction in reflectance coating gap of reflection interval rete mirror after horizontal transmission, described another group semiconductor laser stacks beam collimation of sending forms plug hole with the light beam of horizontal transmission after by the reflectance coating total reflection of reflection interval rete mirror and closes bundle.
4. high-power semiconductor laser beam merging apparatus according to claim 3, is characterized in that, the relative position between two groups of semiconductor laser stacks and reflection interval rete mirror meets following relation:
Described one group of semiconductor laser stacks semiconductor laser unit bright dipping optical axis is bottom X-axis, and the joint of X-axis and reflection interval rete mirror is origin of coordinates O, and Y direction is this semiconductor laser stacks stacks as high direction, determines thus reference axis; In described another group semiconductor laser stacks, with the bright dipping position coordinates of the nearest one group of semiconductor laser unit of described one group of semiconductor laser stacks be
Wherein, g is reflection interval rete mirror thickness, the refractive index that n is lens material, w is the beam separation that adjacent semiconductor laser cell sends, d is the beam diameter after semiconductor laser unit collimation, and θ is incidence angle radian, and α is the angle of reflection interval rete mirror and horizontal direction.
5. according to the high-power semiconductor laser beam merging apparatus described in claim 2 or 4, it is characterized in that: the gap plating anti-reflection film of reflectance coating, plated film width meets following relation:
Wherein, d is the beam diameter after semiconductor laser unit collimation, and w is the beam separation that adjacent semiconductor laser cell sends, a anti-reflection film sector width, and b is reflectance coating sector width.
6. high-power semiconductor laser beam merging apparatus according to claim 5, is characterized in that: described in close beam system and be arranged on fixed mount according to coordinate relation, the material of fixed mount is plastics, aluminium, steel or copper.
7. high-power semiconductor laser beam merging apparatus according to claim 5, it is characterized in that: described semiconductor laser unit is the semiconductor laser chip being welded on heat sink, described semiconductor laser chip is a single tube chip, mini bar or bar bar, or is a plurality of single tube chips, mini bar or bar bar.
8. high-power semiconductor laser beam merging apparatus according to claim 5, it is characterized in that: described collimation lens set comprises fast axis collimation lens and slow axis collimating lens, wherein, fast axis collimation lens is collimation D type non-spherical lens, and slow axis collimating lens is single array cylindrical lens.
9. high-power semiconductor laser beam merging apparatus according to claim 5, is characterized in that: α is 45 °.
10. high-power semiconductor laser beam merging apparatus according to claim 2, is characterized in that: the material of described completely reflecting mirror is metal or glass, plated surface high-reflecting film; The material of high-reflecting film is argent or aluminium, or high-reflecting film adopts multilayer dielectric reflective coating.
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| CN106881872A (en) * | 2016-12-29 | 2017-06-23 | 平湖波科激光有限公司 | The multiwavelength laser welding method and multi-wave length laser device of laminated plastics |
| CN107065448A (en) * | 2017-03-22 | 2017-08-18 | 深圳市海目星激光科技有限公司 | A kind of multispectral mixed recharge combined beam light source and exposure machine |
| CN109638649A (en) * | 2019-01-14 | 2019-04-16 | 北京工业大学 | A kind of high power semiconductor folds the method and device of battle array space conjunction beam |
| CN111384668A (en) * | 2018-12-29 | 2020-07-07 | Tcl集团股份有限公司 | Laser light source module and laser projection system |
| CN112285846A (en) * | 2019-07-22 | 2021-01-29 | 青岛海信宽带多媒体技术有限公司 | Optical transceiving submodule and optical module |
| CN114498301A (en) * | 2021-12-23 | 2022-05-13 | 无锡增意光电有限公司 | Bicolor laser system replacing argon ion laser |
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| CN112285846A (en) * | 2019-07-22 | 2021-01-29 | 青岛海信宽带多媒体技术有限公司 | Optical transceiving submodule and optical module |
| CN114498301A (en) * | 2021-12-23 | 2022-05-13 | 无锡增意光电有限公司 | Bicolor laser system replacing argon ion laser |
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Application publication date: 20140723 |