CN103941406A - High-power semiconductor laser optical shaping method and device based on beam expanding - Google Patents
High-power semiconductor laser optical shaping method and device based on beam expanding Download PDFInfo
- Publication number
- CN103941406A CN103941406A CN201410196971.8A CN201410196971A CN103941406A CN 103941406 A CN103941406 A CN 103941406A CN 201410196971 A CN201410196971 A CN 201410196971A CN 103941406 A CN103941406 A CN 103941406A
- Authority
- CN
- China
- Prior art keywords
- semiconductor laser
- light
- stacks
- laser
- expanding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
The invention provides a semiconductor laser optical shaping method and device. High-power uniform light spots can be obtained, and cost is low. The principle includes that firstly, beams emitted by semiconductor laser stacks are collimated and then exponentially expanded, laser beams with energy in Gaussian distribution are transformed into flat-top beams with uniform energy density distribution, and secondly, expanded laser is focused by a focusing system, so that uniformity of the light spots can be achieved and improved.
Description
Technical field
The invention belongs to laser application, be specifically related to a kind of laser beam expander.
Background technology
It is good that laser has monochromaticity, good directionality, and coherence is good, and the advantage that brightness is high has been widely used in the every field of national economy.The beam diameter that laser instrument sends is very little, is generally 1-2mm, in some specific applications, for example, in Laser Processing, laser detection and laser lighting etc., need to be used larger-diameter inhomogeneity laser beam, and this just need to carry out optical shaping to laser and realize.
Conventional optical shaping method can make with the following method at present:
1, reflective optic shaping methods: conventionally can use optical waveguide to carry out optical shaping, but by this kind of comparatively serious depth of focus problem of method existence, cause operating distance short, operating distance is immutable;
2, transmission-type optical shaping method: directly focus on after LASER Light Source is collimated, the laser of this kind of final output of method is bright dark flat-top hot spot separately, and energy is inhomogeneous; The mode that also can use negative lens and positive lens to combine is in addition carried out optical shaping, and this kind of optical shaping method is because being used compared with poly-lens, and cost is high; After can first cutting rearrangement to light source in addition, focus on, but the optical device that the process of resetting in cutting is used is comparatively complicated, cost is high again, and while light-emitting area is smaller with the compression of the spot size that finally need obtain, and causes output facula inhomogeneous.
Summary of the invention
In order to overcome the deficiencies in the prior art, the invention provides a kind of semiconductor laser optical shaping method and device thereof, can obtain high-power uniform light spots, cost is lower.
Principle of the present invention is: after the light that first the folded paroxysm of noise spectra of semiconductor lasers goes out first collimates, expand at double, the laser beam of energy Gaussian distribution is converted to the uniform flat top beam of energy density distribution, then by focusing system, the laser after expanding is focused on, improve hot spot uniformity coefficient, can realize the homogeneity of hot spot.
Implementation is as follows:
This high-power semiconductor laser optical shaping method, comprising:
The light that the folded paroxysm of noise spectra of semiconductor lasers goes out collimates;
Laser after collimation expands at double;
Laser convergence after expanding is at double obtained to the hot spot of required size;
Wherein, expand the combination of link employing optical splitter and reverberator, the outgoing parallel with the reflected light of reverberator of the transmitted light of optical splitter realizes and expanding.
The above-mentioned combination that expands link and can arrange multistage optical splitter and reverberator, carries out multistage expanding.
Based on above-mentioned high-power semiconductor laser optical shaping method, the present invention also proposes concrete several high-power semiconductor laser optics engagement positions:
The high-power semiconductor laser optics engagement positions of the first based on expanding, comprise the semiconductor laser stacks, collimation lens set, beam splitting system and the focusing system that set gradually along light path, described semiconductor laser stacks is made up of several semiconductor laser units; Described beam splitting system comprises the n component optical module setting gradually along Laser output direction, every component optical module comprises optical splitter and reverberator, and the light splitting surface of optical splitter is parallel to each other and all becomes 30-60 ° of angle with Laser output direction along short transverse setting with the reflecting surface of reverberator; Laser beam after optical splitter, the direct transmission of the light of half energy, the light of second half energy reflexes to after reverberator secondary reflection again, with the parallel light outgoing of the direct transmission of optical splitter;
First optical splitter of component optical module is suitable with the stacks as high of semiconductor laser stacks; Each component optical module size increases exponentially successively, m component optical module emerging beam is incident on the optical splitter of m+1 component optical module, 1≤m<n, the arrangement sequence number that m is spectral module, the order that arrangement sequence number is passed through successively according to laser is arranged in numerical order; Described focusing system obtains the hot spot of required size for the laser expanding is focused on to shaping.
Above-mentioned focusing system adopts focus lens group.
Spectral module can have following two class implementations.
The first kind:
In spectral module, reverberator can adopt fully-reflected plane mirror or total reflection prism.The material of fully-reflected plane mirror can adopt glass or metal, plated surface high-reflecting film, and the material of high-reflecting film is argent or aluminium; Or high-reflecting film adopts multilayer dielectric reflective coating.
In spectral module, reverberator also can adopt polarizer; The polarization characteristic of semiconductor laser stacks is TE light, and polarizer is to TE light total reflection; Or the polarization characteristic of semiconductor laser stacks is TM light, and polarizer is to TM light total reflection.Polarizer can be specifically polaroid, polariscope or polarization beam combiner.
In spectral module, optical splitter can adopt spectroscope, and spectroscopical matrix material is glass, the semi-transparent semi-reflecting film of spectroscope plated surface, and the material of semi-transparent semi-reflecting film is zinc sulphide-magnesium fluoride film system.
Equations of The Second Kind:
Spectral module also can adopt prism composite entity to realize the function of optical splitter and reverberator, in prism combination, between each prism, fit tightly, make to have on the whole a side towards semiconductor laser stacks and incidence surface as spectral module vertical with described Laser output direction, there is another side exiting surface as spectral module parallel with described incidence surface (according to above-mentioned basic scheme, the incidence surface of the first component optical module and exiting surface are all suitable with the stacks as high of semiconductor laser stacks, the incidence surface of each component optical module and exiting surface size increase exponentially successively), prism combination is inner exists a binding face to be coated with the light splitting surface of semi-transparent semi-reflecting film as optical splitter, and the adjacent side of parallel with light splitting surface and described incidence surface is as the reflecting surface of reverberator.
Six prisms of spectral module preferred parallel of this class and the combination of prism, parallel six prisms have unique side towards semiconductor laser stacks and incidence surface as spectral module vertical with described Laser output direction, with in this side angle adjacent side that is acute angle, fit tightly described prism, on binding face, be coated with the light splitting surface of semi-transparent semi-reflecting film as optical splitter, with the reflective surface of this side angle adjacent side that is obtuse angle as reverberator; Prism also has a lateral surface vertical with described Laser output direction, as the exiting surface of spectral module.
The light splitting surface of above-mentioned optical splitter and the reflecting surface of reverberator preferably all arrange with Laser output direction angle at 45 °.For the combination of above-mentioned parallel six prisms and prism, be the equal of adopt in angle be 45 ° with parallel six prisms of 135 ° ensured light splitting surface and reflecting surface all with Laser output direction angle at 45 °.
The high-power semiconductor laser optics engagement positions of the second based on expanding, comprise the semiconductor laser stacks, collimation lens set, beam splitting system and the focusing system that set gradually along light path, described beam splitting system comprises n the spectroscope and the last completely reflecting mirror arranging that set gradually along semiconductor laser stacks stacks as high direction, wherein the 1st spectroscope is suitable with semiconductor laser stacks stacks as high, n spectroscope and completely reflecting mirror are parallel uniformly-spaced to be arranged, and becomes 30-60 ° of setting with semiconductor laser stacks light direction; The reflected light of the 1st spectroscopical transmitted light and all the other n-1 spectroscope and completely reflecting mirror forms laser beam expanding jointly; Described focusing system obtains the hot spot of required size for the laser expanding is focused on to shaping;
N spectroscopical light transmission rate difference, the 1st spectroscopical transmitted light energy equates with the energy of reflection light of all the other n-1 spectroscope and completely reflecting mirror:
The 1st spectroscopical transmitance is 1/ (n+1), and reflectivity is n/ (n+1);
M spectroscopical transmitance is that (n-m+1)/(n-m+2), reflectivity is 1/ (n-m+2);
Wherein, n is the total number of spectroscope, and m is spectroscopical arrangement sequence number, 1<m≤n, and the order that arrangement sequence number is passed through successively according to laser is arranged in numerical order.
The third high-power semiconductor laser optics engagement positions based on expanding, comprise the semiconductor laser stacks setting gradually along light path, collimation lens set, beam splitting system and focusing system, described semiconductor laser stacks forms by several semiconductor laser units are stacking, described beam splitting system comprises n the spectroscope and the last completely reflecting mirror arranging that set gradually along semiconductor laser stacks light direction, wherein the 1st spectroscope is suitable with semiconductor laser stacks stacks as high, n spectroscope and completely reflecting mirror are parallel uniformly-spaced to be arranged, become 30-60 ° of setting with semiconductor laser stacks light direction, the reflected light of n spectroscope and completely reflecting mirror forms laser beam expanding jointly, described focusing system obtains the hot spot of required size for the laser expanding is focused on to shaping,
N spectroscopical light transmission rate difference, equates the energy of reflection light of n spectroscope and completely reflecting mirror:
M spectroscopical reflectivity is 1/ (n-m+2), and transmitance is (n-m+1)/(n-m+2);
Wherein, n is the total number of spectroscope, and m is spectroscopical arrangement sequence number, 1≤m≤n, and the order that arrangement sequence number is passed through successively according to laser is arranged in numerical order.
Above-mentioned collimation lens set can adopt one of the combination of fast axis collimation mirror and slow axis collimating mirror or both, and wherein, fast axis collimation lens is collimation D type non-spherical lens, and slow axis collimating mirror is single array cylindrical lens.
The present invention has the following advantages:
(1) increase light-emitting area size, improve ratio of compression between light-emitting area and final spot size, finally can improve uniformity coefficient, can be applicable to the place that laser bonding and laser lighting etc. have higher requirements to laser uniformity coefficient.
(2) realize cost low, components and parts are less.
(3) compact conformation, is suitable for practicality.
(4) high-power semiconductor laser optical shaping method and the device thereof based on expanding of the present invention, the laser of final output is distributed as flat-top and distributes, and energy distribution is even.
Brief description of the drawings
Fig. 1 is schematic diagram of the present invention;
Fig. 2 is the embodiment of the present invention one schematic diagram;
Fig. 3 is the embodiment of the present invention two schematic diagram;
Fig. 4 is the embodiment of the present invention three schematic diagram;
Fig. 5 is the embodiment of the present invention four schematic diagram.
Drawing reference numeral explanation: 1 is semiconductor laser; 2 is collimation lens set; 3 is beam splitting system; 4 focusing systems; 5 is optical splitter; 6 is reverberator; 7 is fast axis collimation lens; 8,9 is condenser lens; 10 is output facula; 11 is slow axis collimating mirror; 12 is light splitting surface; 13 is exiting surface; 14 is reflecting surface; 15 is spectral module; 16 is incidence surface.
Embodiment:
As the high-power semiconductor laser optics engagement positions of Fig. 1 based on expanding comprises semiconductor laser stacks 1, collimation lens set 2, beam splitting system 3 and focusing system 4 form.
Described semiconductor laser stacks 1 is made up of several semiconductor laser units; Described collimation lens set 2 is positioned over semiconductor laser laser emitting place; Described beam splitting system 3 is positioned over laser beam exit direction after the collimation laser after for collimation and expands; Described focusing system 4 is for focusing on shaping to the laser expanding.
Beam splitting system 3 comprises n component optical module, as shown in Figure 1, is a component optical module in the present embodiment, and spectral module comprises an optical splitter 5 and a reverberator 6, and the laser that laser instrument sends is incident on optical splitter 5; The light splitting surface of optical splitter is parallel to each other and all becomes 30-60 ° of angle with Laser output direction along short transverse setting with the reflecting surface of reverberator, preferably 30 °, 45 °, 55 °, 60 ° angle settings, the light of half is carried out transmission by optical splitter 5, the light of half enters to reverberator 6 after reflecting 90 degree, by reverberator 6 again reflect after 90 degree with the combiner of optical splitter 5 transmissions after be incident to the rear output facula 10 of focusing system 4.
The transmissivity of described optical splitter 5 is 50%, and reflectivity is 50%; The reflectivity of described reverberator 6 is 100%, and reverberator 6 can be completely reflecting mirror, and total reflection prism can be also polarizer, can be polaroid, polariscope or polarization beam combiner.
As the high-power semiconductor laser optics engagement positions of Fig. 2 based on expanding comprises semiconductor laser stacks 1, collimation lens set 2, beam splitting system 3 and focusing system 4 form.Described semiconductor laser stacks 1 is made up of several semiconductor laser units; Described collimation lens set 2 is positioned over semiconductor laser stacks 1 laser emitting place; Described beam splitting system 3 is positioned over the laser beam exit direction after collimation, comprise n component optical module 15, every component optical module 15 comprises that ((1≤m<n) component optical module emerging beam is incident on the optical splitter of m+1 component optical module 3 for an optical splitter 5 and reverberator 6, the m.
As shown in Figure 2, the transmissivity of optical splitter 6 is 50%, and reflectivity is 50%; The reflectivity of described reverberator 7 is 100%, and reverberator 7 can be total reflection prism, can be also polarizer, can be specifically polaroid, polariscope or polarization beam combiner.
Described optical splitter 6 adopts spectroscope, and matrix material is glass, the semi-transparent semi-reflecting film of spectroscope plated surface, and the material of semi-transparent semi-reflecting film is zinc sulphide-magnesium fluoride film system; Described reverberator is fully-reflected plane mirror, and matrix material is glass or metal, plated surface high-reflecting film; The material of high-reflecting film is argent or aluminium, or high-reflecting film adopts multilayer dielectric reflective coating.
As shown in Figure 3, spectral module adopts the composite entity of parallel six prisms and prism to realize the function of optical splitter 6 and reverberator 7, parallel six prisms have unique side towards semiconductor laser stacks and incidence surface 16 as spectral module vertical with described Laser output direction, with in this side angle adjacent side that is acute angle, fit tightly described prism, on binding face, be coated with the light splitting surface 12 of semi-transparent semi-reflecting film as optical splitter, with the reflecting surface 14 of this side angle adjacent side that is obtuse angle as reverberator; Prism also has a lateral surface vertical with described Laser output direction, as the exiting surface 13 of spectral module.
As long as spectral module is realized laser beam, to be transmitted through transmission plane by semi-transparent semi-reflecting the light that is light splitting surface 12 later half be that exiting surface 13 carries out transmission, and second half light is incident upon reflecting surface 14 and carries out total reflection, then closes bundle outgoing, and realization expands.
The optical splitter 5 that spectral module adopts is realized laser beam expanding with reverberator 6 for parallel six prisms (45 ° and 135 ° of interior angles) and being used in combination of prism, and semi-transparent semi-reflecting of parallel six prisms are that light splitting surface 12 is that light splitting surface 12 fits tightly with semi-transparent semi-reflecting of prism; Semi-transparent semi-reflecting of parallel six prisms are that light splitting surface 12 is coated with semi-transparent semi-reflecting film, and semi-transparent semi-reflecting of prism is that light splitting surface 12 is coated with semi-transparent semi-reflecting film; The reflecting surface 14 of parallel six prisms is coated with reflectance coating, and the transmission plane of prism is that exiting surface 13 is coated with transmission film.
Parallel six prisms and prism can not be integrated part, as be integrated part semi-transparent semi-reflecting can not realize semi-transparent semi-reflecting effect.
As shown in Figure 3, except using prism, can also use other irregular devices, as long as semi-transparent semi-reflecting of device is the light transmission that light splitting surface 12 can be realized half, the light reflection of half and its transmission plane are directly vertical transmitted light of exiting surface 13.
Fig. 4 is the embodiment of the present invention three schematic diagram, high-power semiconductor laser optics engagement positions based on expanding, comprise semiconductor laser stacks 1, collimation lens set 2 and the beam splitting system 3 and the focusing system 4 that set gradually along light path, the laser that semiconductor laser stacks 1 is sent out, after collimation, is incident to focusing system 4 rear output facula 10 after expanding by beam splitting system 3.
Described beam splitting system 3 comprises n the optical splitter 5 and the last reverberator 6 arranging that set gradually along semiconductor laser stacks 1 stacks as high direction, wherein the 1st optical splitter 5 is suitable with semiconductor laser stacks stacks as high, n optical splitter and reverberator 6 are parallel uniformly-spaced to be arranged, angled with semiconductor laser stacks light direction, be generally between 30-60 degree, preferably 45 degree, 60 degree etc.; The reflected light of the transmitted light of the 1st optical splitter 5 and all the other n-1 optical splitter 5 and reverberator 6 forms laser beam expanding jointly;
The light transmission rate difference of n optical splitter 5, the transmitted light energy of the 1st optical splitter 5 equates with the energy of reflection light of all the other n-1 optical splitter 5 and reverberator 6:
The 1st spectroscopical transmitance is 1/ (n+1), and reflectivity is n/ (n+1);
M spectroscopical transmitance is that (n-m+1)/(n-m+2), reflectivity is 1/ (n-m+2);
Wherein, n is the total number of spectroscope, and m is spectroscopical arrangement sequence number, 1<m≤n.
Semiconductor laser parallel beam expand device shown in Fig. 4 is certain trial-production laser-processing system, for laser bonding circuit board, require the folded battle array of laser instrument power 400W (4 bar bars), and obtain uniform light spots at laser emitting 120mm place, be equivalent to the folded battle array height of laser instrument and the focal length of lens to make restriction.If directly use convex lens to focus on, finally obtain 4 high light spots spaced apart, cannot reach requirement.In conjunction with the present invention, specific embodiment is: the parallel beam expand device of mentioning in the rear increase the present invention of semiconductor laser stacks 1 as shown in Figure 4, re-using convex lens focuses on, be equivalent to increase the light-emitting area size of the folded battle array output of laser instrument, the ratio of compression that improves light beam, has finally obtained uniform light spots.This method needn't increase laser bar bar, provides cost savings, and has effectively improved optical quality.
Fig. 5 is the embodiment of the present invention four schematic diagram, the parallel beam expand device of another high-power semiconductor laser of the present invention, comprise semiconductor laser stacks 1, collimation lens set 2 and the beam splitting system 3 and the focusing system 4 that set gradually along light path, the laser that semiconductor laser stacks 1 is sent out, after collimation, is incident to focusing system 4 rear output facula 10 after expanding by beam splitting system 3.
Beam splitting system 3 comprises n the optical splitter 5 and the last reverberator 6 arranging that set gradually along semiconductor laser stacks 1 light direction, wherein the 1st optical splitter 5 is suitable with semiconductor laser stacks 1 stacks as high, n optical splitter 5 and reverberator 6 are parallel uniformly-spaced to be arranged, angled with semiconductor laser stacks light direction, be generally between 30-60 degree, preferably 45 degree, 60 degree etc.; The reflected light of n optical splitter 5 and reverberator forms laser beam expanding jointly;
The light transmission rate difference of n optical splitter, equates the energy of reflection light of n spectroscope and completely reflecting mirror:
M spectroscopical reflectivity is 1/ (n-m+2), and transmitance is (n-m+1)/(n-m+2);
Wherein, n is the total number of spectroscope, and m is spectroscopical arrangement sequence number, 1≤m≤n.
After the laser that in the present invention, semiconductor laser stacks sends expands by beam splitting system, the laser beam that is Gaussian distribution by energy distribution on quick shaft direction is converted to the uniform flat top beam of energy density distribution, by focusing system, the laser after expanding is focused on, improve hot spot uniformity coefficient, can realize the homogeneity of hot spot, realize the output of uniform surface shaped laser spot.And use conventional methods, owing to there being spacing between semiconductor laser stacks mini-bus bar, always can form bar shaped laser spot.
Claims (10)
1. a high-power semiconductor laser optical shaping method, comprising:
The light that the folded paroxysm of noise spectra of semiconductor lasers goes out collimates;
Laser after collimation expands at double;
Laser convergence after expanding is at double obtained to the hot spot of required size;
Wherein, expand the combination of link employing optical splitter and reverberator, the outgoing parallel with the reflected light of reverberator of the transmitted light of optical splitter realizes and expanding.
2. high-power semiconductor laser optical shaping method according to claim 1, is characterized in that: expand link and be provided with the combination of multistage optical splitter and reverberator, carry out multistage expanding.
3. the high-power semiconductor laser optics engagement positions based on expanding, it is characterized in that: comprise the semiconductor laser stacks, collimation lens set, beam splitting system and the focusing system that set gradually along light path, described semiconductor laser stacks is made up of several semiconductor laser units; Described beam splitting system comprises the n component optical module setting gradually along Laser output direction, every component optical module comprises optical splitter and reverberator, and the light splitting surface of optical splitter is parallel to each other and all becomes 30-60 ° of angle with Laser output direction along short transverse setting with the reflecting surface of reverberator; Laser beam after optical splitter, the direct transmission of the light of half energy, the light of second half energy reflexes to after reverberator secondary reflection again, with the parallel light outgoing of the direct transmission of optical splitter;
First optical splitter of component optical module is suitable with the stacks as high of semiconductor laser stacks; Each component optical module size increases exponentially successively, m component optical module emerging beam is incident on the optical splitter of m+1 component optical module, 1≤m<n, the arrangement sequence number that m is spectral module, the order that arrangement sequence number is passed through successively according to laser is arranged in numerical order; Described focusing system obtains the hot spot of required size for the laser expanding is focused on to shaping.
4. the high-power semiconductor laser optics engagement positions based on expanding according to claim 3, is characterized in that: described focusing system adopts focus lens group.
5. the high-power semiconductor laser optics engagement positions based on expanding according to claim 3, is characterized in that: described reverberator is fully-reflected plane mirror or total reflection prism.
6. the high-power semiconductor laser optics engagement positions based on expanding according to claim 3, is characterized in that: described reverberator is polarizer; The polarization characteristic of semiconductor laser stacks is TE light, and polarizer is to TE light total reflection; Or the polarization characteristic of semiconductor laser stacks is TM light, and polarizer is to TM light total reflection.
(described optical splitter adopts spectroscope, and matrix material is glass, the semi-transparent semi-reflecting film of spectroscope plated surface, and the material of semi-transparent semi-reflecting film is zinc sulphide-magnesium fluoride film system; Described reverberator is fully-reflected plane mirror, and matrix material is glass or metal, plated surface high-reflecting film; The material of high-reflecting film is argent or aluminium, or high-reflecting film adopts multilayer dielectric reflective coating.)?。
7. the high-power semiconductor laser optics engagement positions based on expanding according to claim 3, it is characterized in that: described spectral module adopts the composite entity of parallel six prisms and prism to realize the function of optical splitter and reverberator, parallel six prisms have unique side towards semiconductor laser stacks and incidence surface as spectral module vertical with described Laser output direction, with in this side angle adjacent side that is acute angle, fit tightly described prism, on binding face, be coated with the light splitting surface of semi-transparent semi-reflecting film as optical splitter, with the reflective surface of this side angle adjacent side that is obtuse angle as reverberator, prism also has a lateral surface vertical with described Laser output direction, as the exiting surface of spectral module.
8. the high-power semiconductor laser optics engagement positions based on expanding according to claim 3, is characterized in that: the light splitting surface of optical splitter and the reflecting surface of reverberator all arrange with Laser output direction angle at 45 °.
9. the high-power semiconductor laser optics engagement positions based on expanding, it is characterized in that: comprise the semiconductor laser stacks, collimation lens set, beam splitting system and the focusing system that set gradually along light path, described beam splitting system comprises n the spectroscope and the last completely reflecting mirror arranging that set gradually along semiconductor laser stacks stacks as high direction, wherein the 1st spectroscope is suitable with semiconductor laser stacks stacks as high, n spectroscope and completely reflecting mirror are parallel uniformly-spaced to be arranged, and becomes 30-60 ° of setting with semiconductor laser stacks light direction; The reflected light of the 1st spectroscopical transmitted light and all the other n-1 spectroscope and completely reflecting mirror forms laser beam expanding jointly; Described focusing system obtains the hot spot of required size for the laser expanding is focused on to shaping;
N spectroscopical light transmission rate difference, the 1st spectroscopical transmitted light energy equates with the energy of reflection light of all the other n-1 spectroscope and completely reflecting mirror:
The 1st spectroscopical transmitance is 1/ (n+1), and reflectivity is n/ (n+1);
M spectroscopical transmitance is that (n-m+1)/(n-m+2), reflectivity is 1/ (n-m+2);
Wherein, n is the total number of spectroscope, and m is spectroscopical arrangement sequence number, 1<m≤n, and the order that arrangement sequence number is passed through successively according to laser is arranged in numerical order.
10. the high-power semiconductor laser optics engagement positions based on expanding, it is characterized in that: comprise the semiconductor laser stacks setting gradually along light path, collimation lens set, beam splitting system and focusing system, described semiconductor laser stacks forms by several semiconductor laser units are stacking, described beam splitting system comprises n the spectroscope and the last completely reflecting mirror arranging that set gradually along semiconductor laser stacks light direction, wherein the 1st spectroscope is suitable with semiconductor laser stacks stacks as high, n spectroscope and completely reflecting mirror are parallel uniformly-spaced to be arranged, become 30-60 ° of setting with semiconductor laser stacks light direction, the reflected light of n spectroscope and completely reflecting mirror forms laser beam expanding jointly, described focusing system obtains the hot spot of required size for the laser expanding is focused on to shaping,
N spectroscopical light transmission rate difference, equates the energy of reflection light of n spectroscope and completely reflecting mirror:
M spectroscopical reflectivity is 1/ (n-m+2), and transmitance is (n-m+1)/(n-m+2);
Wherein, n is the total number of spectroscope, and m is spectroscopical arrangement sequence number, 1≤m≤n, and the order that arrangement sequence number is passed through successively according to laser is arranged in numerical order.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410196971.8A CN103941406B (en) | 2014-05-09 | 2014-05-09 | High-power semiconductor laser optical shaping method and device based on beam expanding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410196971.8A CN103941406B (en) | 2014-05-09 | 2014-05-09 | High-power semiconductor laser optical shaping method and device based on beam expanding |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103941406A true CN103941406A (en) | 2014-07-23 |
| CN103941406B CN103941406B (en) | 2017-01-25 |
Family
ID=51189141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410196971.8A Active CN103941406B (en) | 2014-05-09 | 2014-05-09 | High-power semiconductor laser optical shaping method and device based on beam expanding |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103941406B (en) |
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104635343A (en) * | 2015-02-14 | 2015-05-20 | 哈尔滨工业大学 | Refracting-reflecting type variable zoom laser expanding and collimating system |
| CN105739101A (en) * | 2014-12-12 | 2016-07-06 | 深圳市绎立锐光科技开发有限公司 | Dodging structure and dodging system |
| CN106980180A (en) * | 2017-05-08 | 2017-07-25 | 中国科学院长春光学精密机械与物理研究所 | A kind of beam merging apparatus and preparation method thereof |
| CN107199401A (en) * | 2017-04-24 | 2017-09-26 | 和品（香港）公司 | A kind of laser polishing machine and the polishing method using the laser polishing machine |
| CN107941850A (en) * | 2017-11-21 | 2018-04-20 | 宁波英飞迈材料科技有限公司 | A kind of apparatus and method of quick measurement thin-film material thermal capacitance |
| WO2018072610A1 (en) * | 2016-10-17 | 2018-04-26 | 西安炬光科技股份有限公司 | Semiconductor laser module and method for application in noninvasive medical treatment |
| CN108224361A (en) * | 2018-01-18 | 2018-06-29 | 云南裕光科技有限公司 | A kind of laser illuminator system and laser lighting method |
| CN108508621A (en) * | 2018-03-12 | 2018-09-07 | 广东欧珀移动通信有限公司 | Project structured light module, image acquiring device and electronic equipment |
| CN108594457A (en) * | 2018-04-03 | 2018-09-28 | Oppo广东移动通信有限公司 | Laser projecting apparatus, image acquiring device and electronic device |
| CN109799601A (en) * | 2017-11-17 | 2019-05-24 | 财团法人金属工业研究发展中心 | Light secondary process construction |
| CN111041474A (en) * | 2019-12-09 | 2020-04-21 | 中国科学院西安光学精密机械研究所 | High-power laser cladding head |
| CN111127847A (en) * | 2019-12-12 | 2020-05-08 | 皖南医学院 | Face recognition-based anti-squad system and method |
| CN111799647A (en) * | 2020-07-06 | 2020-10-20 | 中国人民解放军战略支援部队航天工程大学 | Miniaturized, automatic reciprocating scanning high power laser |
| CN111897134A (en) * | 2020-07-31 | 2020-11-06 | 西安炬光科技股份有限公司 | Optical module and medical laser device |
| CN112731674A (en) * | 2021-02-05 | 2021-04-30 | 西安炬光科技股份有限公司 | Laser cutting beam splitting device, laser inserting and sewing beam system and method and laser radar |
| CN113732487A (en) * | 2021-08-02 | 2021-12-03 | 北京工业大学 | Single-head multi-path laser processing head and laser processing system |
| CN113930607A (en) * | 2021-09-07 | 2022-01-14 | 中国科学院宁波材料技术与工程研究所 | Self-adaptive distributed laser shock peening processing system and method |
| CN115113409A (en) * | 2022-08-26 | 2022-09-27 | 成都莱普科技股份有限公司 | Linear flat-top light spot generation system, method and equipment based on Dammann grating |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19915000A1 (en) * | 1999-04-01 | 2000-10-26 | Microlas Lasersystem Gmbh | Controlling distribution intensity of laser beam to process a substrate, causing laser radiation to pass through a homogenizing device to let partial rays in laser beam overlay each other |
| CN101772721A (en) * | 2007-07-21 | 2010-07-07 | 德源光电技术(上海)有限公司 | Optical arrangement for generating multi-beams |
| EP2219064A1 (en) * | 2009-02-13 | 2010-08-18 | Laserline Gesellschaft für Entwicklung und Vertrieb von Diodenlasern mbH | Laser lens and diode laser |
| CN102313995A (en) * | 2011-09-06 | 2012-01-11 | 山西飞虹激光科技有限公司 | Light beam shaping system of semiconductor laser arrays |
| CN102621694A (en) * | 2012-03-21 | 2012-08-01 | 中国科学院光电技术研究所 | Strip-shaped astigmatic beam shaping and collimating device |
| WO2012129789A1 (en) * | 2011-03-30 | 2012-10-04 | 青岛海信信芯科技有限公司 | Beam shaping method and device and laser display light source module and equipment |
| CN203870330U (en) * | 2014-05-09 | 2014-10-08 | 西安炬光科技有限公司 | High-power semiconductor laser optical shaping device based on beam expansion |
-
2014
- 2014-05-09 CN CN201410196971.8A patent/CN103941406B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19915000A1 (en) * | 1999-04-01 | 2000-10-26 | Microlas Lasersystem Gmbh | Controlling distribution intensity of laser beam to process a substrate, causing laser radiation to pass through a homogenizing device to let partial rays in laser beam overlay each other |
| CN101772721A (en) * | 2007-07-21 | 2010-07-07 | 德源光电技术(上海)有限公司 | Optical arrangement for generating multi-beams |
| EP2219064A1 (en) * | 2009-02-13 | 2010-08-18 | Laserline Gesellschaft für Entwicklung und Vertrieb von Diodenlasern mbH | Laser lens and diode laser |
| WO2012129789A1 (en) * | 2011-03-30 | 2012-10-04 | 青岛海信信芯科技有限公司 | Beam shaping method and device and laser display light source module and equipment |
| CN102313995A (en) * | 2011-09-06 | 2012-01-11 | 山西飞虹激光科技有限公司 | Light beam shaping system of semiconductor laser arrays |
| CN102621694A (en) * | 2012-03-21 | 2012-08-01 | 中国科学院光电技术研究所 | Strip-shaped astigmatic beam shaping and collimating device |
| CN203870330U (en) * | 2014-05-09 | 2014-10-08 | 西安炬光科技有限公司 | High-power semiconductor laser optical shaping device based on beam expansion |
Non-Patent Citations (2)
| Title |
|---|
| 刘友强等: "激光加工用半导体激光器的光束变换", 《光学精密工程》 * |
| 郝明明: "大功率半导体激光短阵列合束及光纤耦合技术的研究", 《中国博士学位论文全文数据库信息科技辑》 * |
Cited By (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105739101A (en) * | 2014-12-12 | 2016-07-06 | 深圳市绎立锐光科技开发有限公司 | Dodging structure and dodging system |
| CN104635343A (en) * | 2015-02-14 | 2015-05-20 | 哈尔滨工业大学 | Refracting-reflecting type variable zoom laser expanding and collimating system |
| RU2723337C1 (en) * | 2016-10-17 | 2020-06-09 | Фокуслайт Текнолоджиз Инк. | Semiconductor laser module and method of use thereof for non-invasive treatment |
| WO2018072610A1 (en) * | 2016-10-17 | 2018-04-26 | 西安炬光科技股份有限公司 | Semiconductor laser module and method for application in noninvasive medical treatment |
| EP3527260A4 (en) * | 2016-10-17 | 2020-05-13 | Focuslight Technologies Inc. | Semiconductor laser module and method for application in noninvasive medical treatment |
| CN107199401A (en) * | 2017-04-24 | 2017-09-26 | 和品（香港）公司 | A kind of laser polishing machine and the polishing method using the laser polishing machine |
| CN106980180B (en) * | 2017-05-08 | 2019-06-11 | 中国科学院长春光学精密机械与物理研究所 | A kind of beam merging apparatus and preparation method thereof |
| CN106980180A (en) * | 2017-05-08 | 2017-07-25 | 中国科学院长春光学精密机械与物理研究所 | A kind of beam merging apparatus and preparation method thereof |
| CN109799601A (en) * | 2017-11-17 | 2019-05-24 | 财团法人金属工业研究发展中心 | Light secondary process construction |
| CN107941850B (en) * | 2017-11-21 | 2020-08-04 | 宁波英飞迈材料科技有限公司 | Device and method for rapidly measuring heat capacity of thin film material |
| CN107941850A (en) * | 2017-11-21 | 2018-04-20 | 宁波英飞迈材料科技有限公司 | A kind of apparatus and method of quick measurement thin-film material thermal capacitance |
| CN108224361A (en) * | 2018-01-18 | 2018-06-29 | 云南裕光科技有限公司 | A kind of laser illuminator system and laser lighting method |
| CN108508621A (en) * | 2018-03-12 | 2018-09-07 | 广东欧珀移动通信有限公司 | Project structured light module, image acquiring device and electronic equipment |
| CN108594457A (en) * | 2018-04-03 | 2018-09-28 | Oppo广东移动通信有限公司 | Laser projecting apparatus, image acquiring device and electronic device |
| CN111041474A (en) * | 2019-12-09 | 2020-04-21 | 中国科学院西安光学精密机械研究所 | High-power laser cladding head |
| CN111127847A (en) * | 2019-12-12 | 2020-05-08 | 皖南医学院 | Face recognition-based anti-squad system and method |
| CN111799647A (en) * | 2020-07-06 | 2020-10-20 | 中国人民解放军战略支援部队航天工程大学 | Miniaturized, automatic reciprocating scanning high power laser |
| CN111799647B (en) * | 2020-07-06 | 2021-10-12 | 中国人民解放军战略支援部队航天工程大学 | Miniaturized, automatic reciprocating scanning high power laser |
| CN111897134A (en) * | 2020-07-31 | 2020-11-06 | 西安炬光科技股份有限公司 | Optical module and medical laser device |
| CN112731674A (en) * | 2021-02-05 | 2021-04-30 | 西安炬光科技股份有限公司 | Laser cutting beam splitting device, laser inserting and sewing beam system and method and laser radar |
| CN113732487A (en) * | 2021-08-02 | 2021-12-03 | 北京工业大学 | Single-head multi-path laser processing head and laser processing system |
| CN113930607A (en) * | 2021-09-07 | 2022-01-14 | 中国科学院宁波材料技术与工程研究所 | Self-adaptive distributed laser shock peening processing system and method |
| CN115113409A (en) * | 2022-08-26 | 2022-09-27 | 成都莱普科技股份有限公司 | Linear flat-top light spot generation system, method and equipment based on Dammann grating |
| CN115113409B (en) * | 2022-08-26 | 2022-12-30 | 成都莱普科技股份有限公司 | Linear flat-top light spot generation system, method and equipment based on Dammann grating |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103941406B (en) | 2017-01-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103941406A (en) | High-power semiconductor laser optical shaping method and device based on beam expanding | |
| CN103633557B (en) | A kind of laser radar semiconductor laser light resource collimator and extender device | |
| KR101842421B1 (en) | Device for applying laser radiation and device for reproducing a linear light distribution | |
| CN203871649U (en) | High-power semiconductor laser beam expanding system | |
| KR101696055B1 (en) | Multiple beam combiner for laser processing apparatus and a radiation source | |
| CN202267786U (en) | Reflectivity-variable laser beam splitter | |
| CN203870330U (en) | High-power semiconductor laser optical shaping device based on beam expansion | |
| CN108039639A (en) | Multi-pass ultrashort pulse laser amplifier based on single crystal optical fiber polarization control | |
| CN111896937B (en) | Optical module for light beam superposition and laser system | |
| CN103996973B (en) | Beam expanding device of high-power semiconductor laser unit | |
| CN108233182A (en) | Fiber coupling system based on hollow total reflection prism compression light beam | |
| KR101738155B1 (en) | Device for forming line beam | |
| CN103944059B (en) | High-power semiconductor laser beam expanding system | |
| CN110120625B (en) | Laser amplification method based on disc crystal and solid laser amplifier | |
| CN101916964A (en) | Light beam polarization synthesizing device of large-power semiconductor lasers | |
| CN207067543U (en) | High ovality laser beam reshaping system | |
| CN103944067A (en) | High-power semiconductor laser beam combining system | |
| CN102305969B (en) | Micro-optical element for realizing semiconductor laser beam homogenization | |
| US7088517B2 (en) | Beam splitter device or laser-scanning microscope | |
| CN103326226A (en) | Laser pumping device | |
| CN103311789A (en) | Thin laser medium laser device | |
| CN203871648U (en) | High-power semiconductor laser beam expanding device | |
| US9709810B2 (en) | Single-emitter line beam system | |
| CN115032806A (en) | Multi-wavelength laser beam expanding method and beam expanding system | |
| CN213184959U (en) | Multi-pass laser pulse widening device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 710077 Xi'an hi tech Zone 56, Xi'an, Shaanxi Province, No. 56 Patentee after: FOCUSLIGHT TECHNOLOGIES INC. Address before: 710119 Third Floor, Building 10, 17 Information Avenue, New Industrial Park, Xi'an High-tech Zone, Shaanxi Province Patentee before: Xi'an Focuslight Technology Co., Ltd. |