CN103996973B - Beam expanding device of high-power semiconductor laser unit - Google Patents
Beam expanding device of high-power semiconductor laser unit Download PDFInfo
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- CN103996973B CN103996973B CN201410195842.7A CN201410195842A CN103996973B CN 103996973 B CN103996973 B CN 103996973B CN 201410195842 A CN201410195842 A CN 201410195842A CN 103996973 B CN103996973 B CN 103996973B
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0905—Dividing and/or superposing multiple light beams
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Abstract
The invention provides a beam expanding device of a high-power semiconductor laser unit. The beam expanding device can achieve beam expansion of high magnifying power, and is simple and compact in structure, small in size and low in cost. The beam expanding device comprises a semiconductor laser unit stack, a collimating lens set and a beam splitting system which are sequentially arranged along a light path. The beam splitting system comprises n beam splitting lenses and a total reflection mirror, wherein the n beam splitting lenses are arranged sequentially in the stacking height direction of the semiconductor laser unit stack, the total reflection mirror is finally arranged, the first beam splitting lens is equivalent to the stacking height of the semiconductor laser unit stack, the n beam splitting lenses and the total reflection mirror are arranged in parallel and at equal intervals, and the angle between the direction of the lenses and the light emitting-out direction of the semiconductor laser unit stack ranges from 30 degrees to 60 degrees; the transmission light of the first beam splitting lens, the reflected light of the other (n-1) first beam splitting lenses and the reflected light of the total reflection mirror form laser expanded beams together; as the n beam splitting lenses are different in light transmissivity, the energy of the transmission light of the first beam splitting lens is equal to the energy of the reflected light of the other (n-1) first beam splitting lenses and the energy of the reflected light of the total reflection mirror.
Description
Technical field
The invention belongs to laser application, be specifically related to the laser beam expander of a kind of high-power semiconductor laser.
Background technology
It is good that laser has monochromaticity, good directionality, and coherence is good, and the advantage that brightness is high has been widely used for national economy
Every field.The beam diameter that laser instrument sends is the least, usually 1-2mm, in some specific applications, than
Such as Laser Processing, laser detection and laser lighting etc., needing to use larger-diameter laser beam, this is accomplished by beam-expanding system
Realize.In laser processing application, in order to improve working (machining) efficiency, need to utilize beam-expanding system to increase laser facula；Swashing
In optical illumination application, it is desirable to laser facula is relatively big and uniform, need beam-expanding system to extend spot diameter, be re-used as light source and make
With.Laser beam expanding system not only with the diameter of expanded beam, and can improve the space divergence angle of laser beam, makes light beam
Collimation is further improved.
The most conventional laser beam expanding system is the structure of falling Galileo.The structure of falling Galileo include the concavees lens inputted and
The convex lens of one output, concavees lens dissipate, and convex lens collimates.This expand that laser instrument in method sends swash
Light can first add convex lens and collimate, then expands with beam-expanding system, it is also possible to is directly collimated by beam-expanding system,
Expand in demand in little multiplying power, the angle of divergence can be improved and increase hot spot.But the spot size expanded in this approach
Having direct relation with the bore of lens, expand hot spot the biggest, required aperture of lens is the biggest；And expand beam size with
Battery of lens spacing is relevant, and spacing is the biggest, expands hot spot the biggest.If the hot spot of demand larger area, beam-expanding system can be made
Optical tube length is longer, and volume is bigger.Due to the restriction of factors above, this beam-expanding system is not suitable for expanding of big multiplying power,
System bulk can be caused big, in-convenience in use, and the rapidoprint of lens generally uses glass, makes what big multiplying power expanded
Lens are relatively costly.
Summary of the invention
In order to overcome the deficiencies in the prior art, the invention provides the laser beam expander of high-power semiconductor laser, can be real
Expanding of the biggest multiplying power, simple and compact for structure, volume is little, and cost is relatively low.Installation site according to semiconductor laser stacks
Propose the following two kinds technical scheme:
The first high-power semiconductor laser expand device, including the semiconductor laser stacks set gradually along light path,
Collimation lens set and beam splitting system, described semiconductor laser stacks is made up of several semiconductor laser units stacking, described
Beam splitting system includes n the spectroscope and the one of last setting set gradually along semiconductor laser stacks stacks as high direction
Individual completely reflecting mirror, wherein the 1st spectroscope is suitable with semiconductor laser stacks stacks as high, n spectroscope and being all-trans
Penetrate that mirror is parallel to be arranged at equal intervals, become 30-60 ° of setting with semiconductor laser stacks light direction；1st spectroscopical
The reflection light penetrating light and remaining n-1 spectroscope and completely reflecting mirror is collectively forming laser beam expanding；
N spectroscopical light transmission rate is different so that the 1st spectroscopical transmission light energy and remaining n-1 spectroscope with
And the energy of reflection light of completely reflecting mirror is equal:
1st spectroscopical transmitance is 1/ (n+1), and reflectance is n/ (n+1)；
The spectroscopical transmitance of m-th is (n-m+1)/(n-m+2), and reflectance is 1/ (n-m+2)；
Wherein, n is the total number of spectroscope, and m is spectroscopical arrangement sequence number, 1 < m≤n, and arrangement sequence number is according to laser successively
The order passed through is arranged in numerical order.
The second high-power semiconductor laser expand device, including the semiconductor laser stacks set gradually along light path,
Collimation lens set and beam splitting system, described semiconductor laser stacks is made up of several semiconductor laser units stacking, described
Beam splitting system includes that of n spectroscope and the last setting set gradually along semiconductor laser stacks light direction is complete
Reflecting mirror, wherein the 1st spectroscope is suitable with semiconductor laser stacks stacks as high, n spectroscope and completely reflecting mirror
Parallel arrange at equal intervals, become 30-60 ° of setting with semiconductor laser stacks light direction；N spectroscope and total reflection
The reflection light of mirror is collectively forming laser beam expanding；
N spectroscopical light transmission rate is different so that the energy of reflection light of n spectroscope and completely reflecting mirror is equal:
The spectroscopical reflectance of m-th is 1/ (n-m+2), and transmitance is (n-m+1)/(n-m+2)；
Wherein, n is the total number of spectroscope, and m is spectroscopical arrangement sequence number, 1≤m≤n, and arrangement sequence number depends on according to laser
The secondary order passed through is arranged in numerical order.
Based on above-mentioned basic scheme, the present invention also does following optimization and limits and improve:
Above-mentioned semiconductor laser unit is the semiconductor laser chip being welded on heat sink, and described semiconductor laser chip is
One single tube chip, mini bar or bar bar, or be multiple single tube chip, mini bar or bar bar.
Above-mentioned collimation lens set includes fast axis collimation lens and slow axis collimating lens or one of both, wherein, fast axis collimation
Lens are collimation D type non-spherical lens, and slow axis collimating mirror is single array cylindrical lens.
The matrix material of above-mentioned completely reflecting mirror is glass or metal, plated surface high-reflecting film；Or high-reflecting film uses multilayer dielectricity anti-
Penetrate film.
Above-mentioned spectroscopical matrix material is glass, and spectroscope plated surface increases anti-film, and the material increasing anti-film is zinc sulfide-fluorination
Magnesium film system.
Above-mentioned spectroscope and completely reflecting mirror are installed along with on fixed mount with a scale, and the material of fixed mount is plastics, aluminum, steel
Or copper.
Above-mentioned spectroscopical light transmission rate is not both and uses the plated film of different size to realize.
The invention have the advantages that
1) expanding of big multiplying power can be carried out；
2) expanding hot spot uniform, size can the most freely adjust；
3) length of beam-expanding system is only relevant with single spectroscopical diameter, and this length is not by the shadow expanding spot size
Ring, in big multiplying power beam-expanding system, so substantially reduce the length of lens barrel, reduce system bulk；
4) spectroscope film coating manufacturing process is ripe, reduces the cost of system.
Accompanying drawing explanation
Fig. 1 is the laser beam expander schematic diagram (scheme one) of high-power semiconductor laser；
Fig. 2 is the laser beam expander schematic diagram (scheme two) of high-power semiconductor laser；
Fig. 3 is the laser beam expander case study on implementation signal using the high-power semiconductor laser prepared by the present invention program one
Figure；
Fig. 4 is the laser beam expander case study on implementation signal using the high-power semiconductor laser prepared by the present invention program two
Figure；
Fig. 5 is an embodiment schematic diagram (based on scheme one) of the laser beam expander of high-power semiconductor laser.
Fig. 6 is an embodiment schematic diagram (based on scheme two) of the laser beam expander of high-power semiconductor laser.
Drawing reference numeral illustrates: 1 is semiconductor laser stacks；2 is fast axis collimation mirror；3 is slow axis collimating mirror；4 is light splitting
System；5 is spectroscope；6 is completely reflecting mirror；7 is fixed mount；8 is collimation lens set.
Detailed description of the invention
Scheme one:
A kind of laser beam expander of high-power semiconductor laser, including semiconductor laser stacks, collimation lens set and point
Photosystem forms.Semiconductor laser stacks is made up of several semiconductor laser units；Collimation lens set includes fast axis collimation
Mirror and slow axis collimating mirror, wherein, fast axis collimation mirror can be collimation D type non-spherical lens；Slow axis collimating mirror is single array cylinder
Lens.Described collimation lens set is positioned at laser semiconductor outgoing；After described beam splitting system is positioned over collimation
Laser beam exit direction, including n spectroscope and a reflecting mirror, n described spectroscope is the most parallel to be arranged at equal intervals
Row, the light energy that remaining n-1 spectroscope is reflected in addition to first spectroscope is identical and transmits with first spectroscope
Light energy identical, at last spectroscopical smooth transmission, completely reflecting mirror is set, the light that completely reflecting mirror is reflected with remove
The light energy that outside first spectroscope, remaining spectroscope is reflected is identical；The collimated light beam of above-mentioned n+1 bundle homenergic is final
It is combined into a branch of uniform laser beam.
N spectroscopical light transmission rate is different, and the reflectance coating plating different size on n spectroscope can be used to be accomplished by
1st spectroscopical transmitance is 1/ (n+1), and reflectance is n/ (n+1)；
M sheet (1 < m≤n) spectroscopical transmitance is (n-m+1)/(n-m+2), and reflectance is 1/ (n-m+2)；
Wherein, n is the spectroscope sum used, and m is the spectroscope sequence number (1 < m≤n) that need to calculate.Arrangement sequence number according to
The order that laser passes sequentially through is arranged in numerical order.
As it is shown in figure 1, total 5,1 completely reflecting mirror 6 of n sheet spectroscope, n value depends on the required chi expanding hot spot
Very little.The laser that semiconductor laser stacks 1 sends has certain angle of divergence, is first collimated by collimation lens set 8, collimation
Battery of lens 8 can include that both fast axis collimation mirror 2 and slow axis collimating mirror 3 or one of both expand through beam splitting system 4 again
Bundle.N spectroscope 5 and completely reflecting mirror 6 is parallel arranges at equal intervals, becomes with semiconductor laser stacks 1 light direction
30-60 ° of setting, laser beam is after spectroscope 5, and a part carries out direct projection transmission, another part light beam reflection deflection 90 °
Rear entrance total reflective mirror 6 or second spectroscope 5, if light beam enters completely reflecting mirror 5, the most again deflection 90 °, with first
The transmission parallel light outgoing of sheet spectroscope 5 synthesizes a branch of emergent light, and the beam diameter after expanding is full-sized 2 times, now
The transmitance of spectroscope 5 is 50%, and reflectance is 50%；If the reflection light beam of above-mentioned first spectroscope 5 enters second
Spectroscope 5, carries out light splitting, part reflection deflection 90 ° and first spectroscope transmission parallel light outgoing the most again, another
Sections transverse transmission, enters the 3rd spectroscope or entrance completely reflecting mirror completes to expand, and can realize many times with principles above
Expand.
As it is shown in figure 1, n spectroscope 5 and completely reflecting mirror 6 is parallel arranges at equal intervals, go out with semiconductor laser stacks
Light direction setting at 45 °.
The laser beam expander schematic diagram of high-power semiconductor laser as shown in Figure 5, n spectroscope 5 and completely reflecting mirror
6 parallel arrange at equal intervals, become 55 ° of settings with semiconductor laser stacks light direction；Additionally, n spectroscope 5 and
Completely reflecting mirror 6 is parallel to be arranged at equal intervals, becomes 30-60 ° of setting with semiconductor laser stacks light direction, preferably 30 °,
35 °, 45 °, 55 ° and 60 °.
It is heat sink for being welded on that semiconductor laser stacks 1 is formed semiconductor laser unit by several semiconductor laser units stacking
On semiconductor laser chip, described semiconductor laser chip is a single tube chip, mini bar or bar bar, or
Person is multiple single tube chip, mini bar or bar bar.
Collimation lens set 8 includes both fast axis collimation lens 2 and slow axis collimating lens 3 or one of both, and wherein, fast axle is accurate
Straight lens 2 are collimation D type non-spherical lens, and slow axis collimating mirror is single array cylindrical lens.
The matrix material of completely reflecting mirror 6 is glass or metal, when the material of completely reflecting mirror is metal, can be selected for metallic copper, gold
Belonging to aluminum, metal aluminum alloy or stainless steel material, plated surface high-reflecting film, the material of high-reflecting film is argent or Aurum metallicum, or
Other have the reflectance coating of high emission effect；Or high-reflecting film uses multilayer dielectric reflective coating, and multilayer dielectric reflective coating material is
Can be selected for plating TiO2 and SiO2 or other multilayer dielectric reflective coating materials successively.
The matrix material of spectroscope 5 is glass, and spectroscope plated surface increases anti-film, and the material increasing anti-film is zinc sulfide-Afluon (Asta)
Film system.
As it is shown on figure 3, this kind of high-power semiconductor laser expand device, beam splitting system 4 can be arranged on fixed mount 7
On, spectroscope 5 and completely reflecting mirror 6 are installed along with on fixed mount 7 with a scale, and the material of fixed mount is plastics, aluminum,
Steel or copper.
Scheme two:
A kind of laser beam expander of high-power semiconductor laser, including semiconductor laser stacks, collimation lens set and point
Photosystem forms；Described semiconductor laser stacks is made up of several semiconductor laser units；Collimation lens set includes soon
Axle collimating mirror and slow axis collimating mirror, wherein, fast axis collimation mirror can be collimation D type non-spherical lens；Slow axis collimating mirror is Dan Zhen
Row cylindrical lens.Described collimation lens set is positioned at laser semiconductor outgoing；Described beam splitting system is positioned over standard
Laser beam exit direction after Zhi, including n spectroscope and a reflecting mirror, n described spectroscope is the most parallel
Being spaced, the light energy that n spectroscope is reflected is identical, arranges total reflection at last spectroscopical smooth transmission
Mirror, the light energy that the light that completely reflecting mirror is reflected is reflected with spectroscope is identical；Above-mentioned n+1 bundle reflection light beam finally closes
For a branch of uniform laser beam.
N spectroscopical light transmission rate is different, and the reflectance coating plating different size on n spectroscope can be used to be accomplished by
Reflectance is: 1/ (n-m+2)；Transmitance is (n-m+1)/(n-m+2)；
Wherein, n be use spectroscope sum, m is the spectroscope sequence number (1≤m≤n) that need to calculate, arrangement sequence number according to
The order that laser passes sequentially through is arranged in numerical order.
As in figure 2 it is shown, the collimated battery of lens of semiconductor laser 18, in Fig. 2, collimation lens set 8 has selected fast axle accurate
After straight lens 2, the laser beam of outgoing enters beam splitting system 4.Laser beam after first spectroscope 5, a part of light beam
Reflection outgoing, another part is transmitted into second spectroscope 5, and a part of light beam is reflected outgoing by second spectroscope 5,
And with the reflection parallel beam of first spectroscope 5, another part light beam enters the 3rd spectroscope 5；The like to
M sheet spectroscope, is finally transmitted into completely reflecting mirror 6, and the light beam of completely reflecting mirror 6 reflection is with spectroscopical reflection light beam together
Outgoing is formed and expands hot spot.
As in figure 2 it is shown, n spectroscope 5 and completely reflecting mirror 6 is parallel arranges at equal intervals, go out with semiconductor laser stacks
Light direction setting at 45 °.
As shown in Figure 6, n spectroscope 5 and completely reflecting mirror 6 is parallel arranges at equal intervals, go out with semiconductor laser stacks
Light direction becomes 30 ° of settings, additionally, n spectroscope 5 and completely reflecting mirror 6 is parallel arranges at equal intervals, with semiconductor laser
Device is folded battle array light direction and is become 30-60 ° of setting, preferably 30 °, 35 °, 45 °, 55 ° and 60 °.
As shown in Figure 4, this kind of high-power semiconductor laser expand device, beam splitting system 4 can be arranged on fixed mount 7
On, light splitting, 5 are installed along with on fixed mount 7 with a scale with completely reflecting mirror 6, and the material of fixed mount is plastics, aluminum, steel
Or copper.
It is heat sink for being welded on that semiconductor laser stacks 1 is formed semiconductor laser unit by several semiconductor laser units stacking
On semiconductor laser chip, described semiconductor laser chip is a single tube chip, mini bar or bar bar, or
Person is multiple single tube chip, mini bar or bar bar.
Fast axis collimation lens 2 is collimation D type non-spherical lens.
The matrix material of completely reflecting mirror 6 is glass or metal, when the material of completely reflecting mirror is metal, can be selected for metallic copper, gold
Belonging to aluminum, metal aluminum alloy or stainless steel material, plated surface high-reflecting film, the material of high-reflecting film is argent or Aurum metallicum, or
Other have the reflectance coating of high emission effect；Or high-reflecting film uses multilayer dielectric reflective coating, and multilayer dielectric reflective coating material is
Can be selected for plating TiO2 and SiO2 or other multilayer dielectric reflective coating materials successively.
The matrix material of spectroscope 5 is glass, and spectroscope plated surface increases anti-film, and the material increasing anti-film is zinc sulfide-Afluon (Asta)
Film system.
As shown in Figure 4, this kind of high-power semiconductor laser expand device, beam splitting system 4 can be arranged on fixed mount 7
On, spectroscope 5 and completely reflecting mirror 6 are installed along with on fixed mount 7 with a scale, and the material of fixed mount is plastics, aluminum,
Steel or copper.
Claims (9)
1. a high-power semiconductor laser expand device, it is characterised in that: include partly leading along what light path set gradually
Body laser folds battle array, collimation lens set and beam splitting system, and described semiconductor laser stacks is by several semiconductor laser units
Stacking composition, described beam splitting system include n spectroscope setting gradually along semiconductor laser stacks stacks as high direction with
And the completely reflecting mirror finally arranged, wherein the 1st spectroscope is suitable with semiconductor laser stacks stacks as high, n
Spectroscope and completely reflecting mirror is parallel arranges at equal intervals, becomes 30-60 ° of setting with semiconductor laser stacks light direction；The
The reflection light of 1 spectroscopical transmission light and remaining n-1 spectroscope and completely reflecting mirror is collectively forming laser beam expanding；
N spectroscopical light transmission rate is different so that the 1st spectroscopical transmission light energy and remaining n-1 spectroscope with
And the energy of reflection light of completely reflecting mirror is equal:
1st spectroscopical transmitance is 1/ (n+1), and reflectance is n/ (n+1)；
The spectroscopical transmitance of m-th is (n-m+1)/(n-m+2), and reflectance is 1/ (n-m+2)；
Wherein, n is the total number of spectroscope, and m is spectroscopical arrangement sequence number, 1 < m≤n, and arrangement sequence number is according to laser successively
The order passed through is arranged in numerical order.
2. a high-power semiconductor laser expand device, it is characterised in that: include partly leading along what light path set gradually
Body laser folds battle array, collimation lens set and beam splitting system, and described semiconductor laser stacks is by several semiconductor laser units
Stacking composition, described beam splitting system includes n spectroscope setting gradually along semiconductor laser stacks light direction and
One completely reflecting mirror of rear setting, wherein the 1st spectroscope is suitable with semiconductor laser stacks stacks as high, n light splitting
Mirror and completely reflecting mirror is parallel arranges at equal intervals, becomes 30-60 ° of setting with semiconductor laser stacks light direction；N point
The reflection light of light microscopic and completely reflecting mirror is collectively forming laser beam expanding；
N spectroscopical light transmission rate is different so that the energy of reflection light of n spectroscope and completely reflecting mirror is equal:
The spectroscopical reflectance of m-th is 1/ (n-m+2), and transmitance is (n-m+1)/(n-m+2)；
Wherein, n is the total number of spectroscope, and m is spectroscopical arrangement sequence number, 1≤m≤n, and arrangement sequence number depends on according to laser
The secondary order passed through is arranged in numerical order.
High-power semiconductor laser the most according to claim 1 and 2 expand device, it is characterised in that: described
Semiconductor laser unit is the semiconductor laser chip being welded on heat sink, and described semiconductor laser chip is a single tube
Chip, mini bar, multiple single tube chip or multiple mini bar.
High-power semiconductor laser the most according to claim 1 and 2 expand device, it is characterised in that: described
Collimation lens set includes fast axis collimation lens and slow axis collimating lens or one of both, and wherein, fast axis collimation lens is as the criterion
Straight D type non-spherical lens, slow axis collimating lens is single array cylindrical lens.
High-power semiconductor laser the most according to claim 1 and 2 expand device, it is characterised in that: described
The matrix material of completely reflecting mirror is glass or metal, plated surface high-reflecting film.
High-power semiconductor laser the most according to claim 5 expand device, it is characterised in that: described height is anti-
The material of film is silver-colored or golden；Or described high-reflecting film uses multilayer dielectric reflective coating, the most successively plating TiO2 and SiO2.
High-power semiconductor laser the most according to claim 1 and 2 expand device, it is characterised in that: described
Spectroscopical matrix material is glass, and spectroscope plated surface increases anti-film, and increasing the material of anti-film is zinc sulfide-Afluon (Asta) film system.
High-power semiconductor laser the most according to claim 1 and 2 expand device, it is characterised in that: described
Spectroscope and completely reflecting mirror are installed along with on fixed mount with a scale, and the material of fixed mount is plastics, aluminum, steel or copper.
High-power semiconductor laser the most according to claim 1 and 2 expand device, it is characterised in that: light splitting
The light transmission rate of mirror is not both and uses the plated film of different size to realize.
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| CN201410195842.7A CN103996973B (en) | 2014-05-09 | 2014-05-09 | Beam expanding device of high-power semiconductor laser unit |
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| CN201410195842.7A CN103996973B (en) | 2014-05-09 | 2014-05-09 | Beam expanding device of high-power semiconductor laser unit |
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| CN103996973A CN103996973A (en) | 2014-08-20 |
| CN103996973B true CN103996973B (en) | 2017-01-11 |
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| JP6523547B2 (en) * | 2016-02-22 | 2019-06-05 | 株式会社日立ハイテクノロジーズ | Dichroic mirror array |
| JP2018054673A (en) * | 2016-09-26 | 2018-04-05 | セイコーエプソン株式会社 | Retina scanning type display device, and beam diameter enlargement element |
| US10473943B1 (en) | 2016-11-09 | 2019-11-12 | ColdQuanta, Inc. | Forming beamformer having stacked monolithic beamsplitters |
| CN106383354A (en) * | 2016-12-15 | 2017-02-08 | 北醒（北京）光子科技有限公司 | Coaxial device without blind area |
| CN108761808A (en) * | 2018-08-29 | 2018-11-06 | 西安炬光科技股份有限公司 | Semiconductor laser module and the semiconductor device of both-end output |
| CN110459958B (en) * | 2019-09-16 | 2024-05-24 | 中国人民解放军国防科技大学 | High-power semiconductor laser array wavelength locking and linewidth compressing device and method |
| CN113972555A (en) * | 2020-07-23 | 2022-01-25 | 山东华光光电子股份有限公司 | Optical processing method for semiconductor laser stack array |
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| CN101059638A (en) * | 2006-04-18 | 2007-10-24 | 北京国科世纪激光技术有限公司 | Laser power/ energy adjustment distribution device |
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