CN103996973A - Beam expanding device of high-power semiconductor laser unit - Google Patents
Beam expanding device of high-power semiconductor laser unit Download PDFInfo
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- CN103996973A CN103996973A CN201410195842.7A CN201410195842A CN103996973A CN 103996973 A CN103996973 A CN 103996973A CN 201410195842 A CN201410195842 A CN 201410195842A CN 103996973 A CN103996973 A CN 103996973A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0905—Dividing and/or superposing multiple light beams
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Abstract
The invention provides a beam expanding device of a high-power semiconductor laser unit. The beam expanding device can achieve beam expansion of high magnifying power, and is simple and compact in structure, small in size and low in cost. The beam expanding device comprises a semiconductor laser unit stack, a collimating lens set and a beam splitting system which are sequentially arranged along a light path. The beam splitting system comprises n beam splitting lenses and a total reflection mirror, wherein the n beam splitting lenses are arranged sequentially in the stacking height direction of the semiconductor laser unit stack, the total reflection mirror is finally arranged, the first beam splitting lens is equivalent to the stacking height of the semiconductor laser unit stack, the n beam splitting lenses and the total reflection mirror are arranged in parallel and at equal intervals, and the angle between the direction of the lenses and the light emitting-out direction of the semiconductor laser unit stack ranges from 30 degrees to 60 degrees; the transmission light of the first beam splitting lens, the reflected light of the other (n-1) first beam splitting lenses and the reflected light of the total reflection mirror form laser expanded beams together; as the n beam splitting lenses are different in light transmissivity, the energy of the transmission light of the first beam splitting lens is equal to the energy of the reflected light of the other (n-1) first beam splitting lenses and the energy of the reflected light of the total reflection mirror.
Description
Technical field
The invention belongs to laser application, be specifically related to a kind of laser beam expander of high-power semiconductor laser.
Background technology
It is good that laser has monochromaticjty, good directionality, and coherence is good, and the advantage that brightness is high has been widely used in the every field of national economy.The beam diameter that laser sends is very little, is generally 1-2mm, and in some specific applications, such as laser processing, laser detection and laser lighting etc., need to be used larger-diameter laser beam, and this just needs beam-expanding system to realize.In laser processing application, in order to improve working (machining) efficiency, need to utilize beam-expanding system to increase laser facula; In laser lighting application, require laser facula large and even, need beam-expanding system expansion spot diameter, be re-used as light source and use.Laser beam expanding system not only can expanded beam diameter, and the space divergence angle of improving laser beam, is further improved the collimation of light beam.
Conventional laser beam expanding system is the structure of falling Galileo at present.The structure of falling Galileo comprises the concavees lens of an input and the convex lens of an output, and concavees lens are dispersed, and convex lens collimate.Thisly expand laser that in method, laser sends and can first add convex lens and collimate, then expand with beam-expanding system, also can directly collimate by beam-expanding system, expanding in demand of little multiplying power, can improve the angle of divergence and increase hot spot.But the spot size expanding in this method and the bore of lens have direct relation, expand hot spot larger, and needed aperture of lens is larger; And it is relevant with set of lenses spacing to expand beam size, and spacing is larger, expands hot spot larger.If demand larger area hot spot, can make beam-expanding system optical tube length longer, volume is larger.Due to the restriction of above factor, this beam-expanding system is not suitable for expanding of large multiplying power, can cause system bulk large, uses inconveniently, and the rapidoprint of lens generally uses glass, makes the lens cost that large multiplying power expands higher.
Summary of the invention
In order to overcome the deficiencies in the prior art, the invention provides the laser beam expander of high-power semiconductor laser, can realize expanding of large multiplying power, simple and compact for structure, volume is little, and cost is lower.According to the installation site of semiconductor laser stacks, following two kinds of technical schemes are proposed:
The parallel beam expand device of the first high-power semiconductor laser, comprise the semiconductor laser stacks setting gradually along light path, collimation lens set and beam splitting system, described semiconductor laser stacks forms by several semiconductor laser units are stacking, described beam splitting system comprises n the spectroscope and the last completely reflecting mirror arranging that set gradually along semiconductor laser stacks stacks as high direction, wherein the 1st spectroscope is suitable with semiconductor laser stacks stacks as high, n spectroscope and completely reflecting mirror are parallel uniformly-spaced to be arranged, become 30-60 ° of setting with semiconductor laser stacks light direction, the reverberation of the 1st spectroscopical transmitted light and all the other n-1 spectroscope and completely reflecting mirror forms laser beam expanding jointly,
N spectroscopical light transmission rate difference, makes the 1st spectroscopical transmitted light energy equate with the energy of reflection light of all the other n-1 spectroscope and completely reflecting mirror:
The 1st spectroscopical transmitance is 1/ (n+1), and reflectivity is n/ (n+1);
M spectroscopical transmitance is that (n-m+1)/(n-m+2), reflectivity is 1/ (n-m+2);
Wherein, n is the total number of spectroscope, and m is spectroscopical arrangement sequence number, 1<m≤n, and the order that arrangement sequence number is passed through successively according to laser is arranged in numerical order.
The parallel beam expand device of the second high-power semiconductor laser, comprise the semiconductor laser stacks setting gradually along light path, collimation lens set and beam splitting system, described semiconductor laser stacks forms by several semiconductor laser units are stacking, described beam splitting system comprises n the spectroscope and the last completely reflecting mirror arranging that set gradually along semiconductor laser stacks light direction, wherein the 1st spectroscope is suitable with semiconductor laser stacks stacks as high, n spectroscope and completely reflecting mirror are parallel uniformly-spaced to be arranged, become 30-60 ° of setting with semiconductor laser stacks light direction, the reverberation of n spectroscope and completely reflecting mirror forms laser beam expanding jointly,
N spectroscopical light transmission rate difference, equates the energy of reflection light of n spectroscope and completely reflecting mirror:
M spectroscopical reflectivity is 1/ (n-m+2), and transmitance is (n-m+1)/(n-m+2);
Wherein, n is the total number of spectroscope, and m is spectroscopical arrangement sequence number, 1≤m≤n, and the order that arrangement sequence number is passed through successively according to laser is arranged in numerical order.
Based on above-mentioned basic scheme, the present invention also does following optimization and limits and improve:
Above-mentioned semiconductor laser unit is the semiconductor laser chip being welded on heat sink, and described semiconductor laser chip is a single tube chip, mini bar or bar bar, or be multiple single tube chips, mini bar or cling to bar.
Above-mentioned collimation lens set comprises one of fast axis collimation lens and slow axis collimating lens or both, and wherein, fast axis collimation lens is collimation D type non-spherical lens, and slow axis collimating mirror is single array cylindrical lens.
The basis material of above-mentioned completely reflecting mirror is glass or metal, plated surface high-reflecting film; Or high-reflecting film adopts multilayer dielectric reflective coating.
Above-mentioned spectroscopical basis material is glass, and spectroscope plated surface increases anti-film, and the material that increases anti-film is zinc sulphide-magnesium fluoride film system.
Above-mentioned spectroscope is arranged on the fixed mount with scale together with completely reflecting mirror, and the material of fixed mount is plastics, aluminium, steel or copper.
Above-mentioned spectroscopical light transmission rate is not both and adopts the plated film of different size to realize.
The present invention has the following advantages:
1) can carry out expanding of large multiplying power;
2) expand hot spot even, size can freely be adjusted according to demand;
3) length of beam-expanding system is only relevant with single spectroscopical diameter, and this length do not expanded the impact of spot size, has greatly shortened like this length of lens barrel in large multiplying power beam-expanding system, has reduced system bulk;
4) spectroscope film coating manufacturing process maturation, has reduced the cost of system.
Brief description of the drawings
Fig. 1 is the laser beam expander schematic diagram (scheme one) of high-power semiconductor laser;
Fig. 2 is the laser beam expander schematic diagram (scheme two) of high-power semiconductor laser;
Fig. 3 is the laser beam expander case study on implementation schematic diagram that uses the prepared high-power semiconductor laser of the present invention program one;
Fig. 4 is the laser beam expander case study on implementation schematic diagram that uses the prepared high-power semiconductor laser of the present invention program two;
Fig. 5 is an embodiment schematic diagram (based on scheme one) of the laser beam expander of high-power semiconductor laser.
Fig. 6 is an embodiment schematic diagram (based on scheme two) of the laser beam expander of high-power semiconductor laser.
Drawing reference numeral explanation: 1 is semiconductor laser stacks; 2 is fast axis collimation mirror; 3 is slow axis collimating mirror; 4 is beam splitting system; 5 is spectroscope; 6 is completely reflecting mirror; 7 is fixed mount; 8 is collimation lens set.
Embodiment
Scheme one:
A laser beam expander for high-power semiconductor laser, comprises semiconductor laser stacks, collimation lens set and beam splitting system composition.Semiconductor laser stacks is made up of several semiconductor laser units; Collimation lens set comprises fast axis collimation mirror and slow axis collimating mirror, and wherein, fast axis collimation mirror can be collimation D type non-spherical lens; Slow axis collimating mirror is single array cylindrical lens.Described collimation lens set is positioned over semiconductor laser laser emitting place; Described beam splitting system is positioned over the laser beam exit direction after collimation, comprise n spectroscope and a speculum, a described n spectroscope is parallel successively uniformly-spaced to be arranged, the light energy light energy identical and that transmit with first spectroscope that all the other n-1 spectroscope reflects except first spectroscope is identical, in the end spectroscopical smooth transmission place arranges completely reflecting mirror, and the light that completely reflecting mirror reflects is identical with the light energy that all the other spectroscopes reflect except first spectroscope; The collimated light beam of said n+1 bundle homenergic is finally combined into a branch of uniform laser beam.
N spectroscopical light transmission rate difference, can adopt the reflectance coating that plates different size on n spectroscope to be achieved as follows:
The 1st spectroscopical transmitance is 1/ (n+1), and reflectivity is n/ (n+1);
(1<m≤n) spectroscopical transmitance is that (n-m+1)/(n-m+2), reflectivity is 1/ (n-m+2) to m sheet;
Wherein, n is the spectroscope sum using, and m needs the spectroscope sequence number (1<m≤n) that calculates.The order that arrangement sequence number is passed through successively according to laser is arranged in numerical order.
As shown in Figure 1, total 5,1 completely reflecting mirrors 6 of n sheet spectroscope, n value depends on the needed size that expands hot spot.The laser that semiconductor laser stacks 1 sends has certain angle of divergence, is first collimated by collimation lens set 8, and collimation lens set 8 can comprise that fast axis collimation mirror 2 and slow axis collimating mirror 3 both or both the beam splitting systems 4 of process again and again expand.N spectroscope 5 and completely reflecting mirror 6 are parallel uniformly-spaced to be arranged, become 30-60 ° of setting with semiconductor laser stacks 1 light direction, laser beam is after spectroscope 5, a part is carried out direct projection transmission, after 90 ° of another part beam reflection deflections, enter total reflective mirror 6 or second spectroscope 5, if light beam enters completely reflecting mirror 5,90 ° of deflections again, the synthetic a branch of emergent light of the parallel outgoing of transmitted light with first spectroscope 5, beam diameter after expanding is full-sized 2 times, now the transmitance of spectroscope 5 is 50%, and reflectivity is 50%; If the folded light beam of above-mentioned first spectroscope 5 enters second spectroscope 5, again carry out light splitting, 90 ° of a part of reflection deflections and the parallel outgoing of first spectroscope transmitted light, the vertical transmission of another part, enter the 3rd spectroscope or enter completely reflecting mirror and complete and expand, can realize many times with above principle and expand.
As shown in Figure 1, n spectroscope 5 and completely reflecting mirror 6 are parallel uniformly-spaced to be arranged, with the setting at 45 ° of semiconductor laser stacks light direction.
The laser beam expander schematic diagram of high-power semiconductor laser as shown in Figure 5, n spectroscope 5 and completely reflecting mirror 6 are parallel uniformly-spaced to be arranged, and becomes 55 ° of settings with semiconductor laser stacks light direction; In addition, n spectroscope 5 and completely reflecting mirror 6 are parallel uniformly-spaced to be arranged, and becomes 30-60 ° of setting, preferably 30 °, 35 °, 45 °, 55 ° and 60 ° with semiconductor laser stacks light direction.
Semiconductor laser stacks 1 is the semiconductor laser chip being welded on heat sink by the stacking semiconductor laser unit that forms of several semiconductor laser units, described semiconductor laser chip is a single tube chip, mini bar or bar bar, or is multiple single tube chips, mini bar or bar bar.
Collimation lens set 8 comprises one of fast axis collimation lens 2 and slow axis collimating lens 3 both or both, and wherein, fast axis collimation lens 2 is collimation D type non-spherical lens, and slow axis collimating mirror is single array cylindrical lens.
The basis material of completely reflecting mirror 6 is glass or metal, when the material of completely reflecting mirror is metal, can select metallic copper, metallic aluminium, metallic aluminium alloy or stainless steel material, plated surface high-reflecting film, the material of high-reflecting film is argent or metallic gold, or other have the reflectance coating of high emission effect; Or high-reflecting film adopts multilayer dielectric reflective coating, and multilayer dielectric reflective coating material plates TiO2 and SiO2 or other multilayer dielectric reflective coating materials successively for selecting.
The basis material of spectroscope 5 is glass, and spectroscope plated surface increases anti-film, and the material that increases anti-film is zinc sulphide-magnesium fluoride film system.
As shown in Figure 3, the parallel beam expand device of this kind of high-power semiconductor laser, can be arranged on beam splitting system 4 on fixed mount 7, and spectroscope 5 is arranged on the fixed mount 7 with scale together with completely reflecting mirror 6, and the material of fixed mount is plastics, aluminium, steel or copper.
Scheme two:
A laser beam expander for high-power semiconductor laser, comprises semiconductor laser stacks, collimation lens set and beam splitting system composition; Described semiconductor laser stacks is made up of several semiconductor laser units; Collimation lens set comprises fast axis collimation mirror and slow axis collimating mirror, and wherein, fast axis collimation mirror can be collimation D type non-spherical lens; Slow axis collimating mirror is single array cylindrical lens.Described collimation lens set is positioned over semiconductor laser laser emitting place; Described beam splitting system is positioned over the laser beam exit direction after collimation, comprise n spectroscope and a speculum, a described n spectroscope is parallel successively uniformly-spaced to be arranged, the light energy that n spectroscope reflects is identical, in the end spectroscopical smooth transmission place arranges completely reflecting mirror, and the light energy that the light that completely reflecting mirror reflects reflects with spectroscope is identical; Said n+1 bundle folded light beam is finally combined into a branch of uniform laser beam.
N spectroscopical light transmission rate difference, can adopt the reflectance coating that plates different size on n spectroscope to be achieved as follows:
Reflectivity is: 1/ (n-m+2); Transmitance is (n-m+1)/(n-m+2);
Wherein, n is the spectroscope sum using, and m is that the spectroscope sequence number that needs calculating (1≤m≤n), arrange in numerical order by the order that arrangement sequence number is passed through successively according to laser.
As shown in Figure 2, semiconductor laser 1 is through collimation lens set 8, and in Fig. 2,8 of collimation lens set have selected the rear emitting laser light beam of fast axis collimation lens 2 to enter beam splitting system 4.Laser beam is after first spectroscope 5, the outgoing of part beam reflection, another part transmission enters 5, the second spectroscopes 5 of second spectroscope by a part of beam reflection outgoing, and parallel with the folded light beam of first spectroscope 5, another part light beam enters the 3rd spectroscope 5; The like to m sheet spectroscope, final transmission enters completely reflecting mirror 6, the light beam that completely reflecting mirror 6 reflects and spectroscopical folded light beam together outgoing formation expand hot spot.
As shown in Figure 2, n spectroscope 5 and completely reflecting mirror 6 are parallel uniformly-spaced to be arranged, with the setting at 45 ° of semiconductor laser stacks light direction.
As shown in Figure 6, n spectroscope 5 and completely reflecting mirror 6 are parallel uniformly-spaced to be arranged, become 30 ° of settings with semiconductor laser stacks light direction, in addition, n spectroscope 5 and completely reflecting mirror 6 are parallel uniformly-spaced to be arranged, become 30-60 ° of setting with semiconductor laser stacks light direction, preferably 30 °, 35 °, 45 °, 55 ° and 60 °.
As shown in Figure 4, the parallel beam expand device of this kind of high-power semiconductor laser, can be arranged on beam splitting system 4 on fixed mount 7, light splitting, and on 5 fixed mounts 7 that are arranged on together with completely reflecting mirror 6 with scale, the material of fixed mount is plastics, aluminium, steel or copper.
Semiconductor laser stacks 1 is the semiconductor laser chip being welded on heat sink by the stacking semiconductor laser unit that forms of several semiconductor laser units, described semiconductor laser chip is a single tube chip, mini bar or bar bar, or is multiple single tube chips, mini bar or bar bar.
Fast axis collimation lens 2 is collimation D type non-spherical lens.
The basis material of completely reflecting mirror 6 is glass or metal, when the material of completely reflecting mirror is metal, can select metallic copper, metallic aluminium, metallic aluminium alloy or stainless steel material, plated surface high-reflecting film, the material of high-reflecting film is argent or metallic gold, or other have the reflectance coating of high emission effect; Or high-reflecting film adopts multilayer dielectric reflective coating, and multilayer dielectric reflective coating material plates TiO2 and SiO2 or other multilayer dielectric reflective coating materials successively for selecting.
The basis material of spectroscope 5 is glass, and spectroscope plated surface increases anti-film, and the material that increases anti-film is zinc sulphide-magnesium fluoride film system.
As shown in Figure 4, the parallel beam expand device of this kind of high-power semiconductor laser, can be arranged on beam splitting system 4 on fixed mount 7, and spectroscope 5 is arranged on the fixed mount 7 with scale together with completely reflecting mirror 6, and the material of fixed mount is plastics, aluminium, steel or copper.
Claims (8)
1. the parallel beam expand device of a high-power semiconductor laser, it is characterized in that: comprise the semiconductor laser stacks setting gradually along light path, collimation lens set and beam splitting system, described semiconductor laser stacks forms by several semiconductor laser units are stacking, described beam splitting system comprises n the spectroscope and the last completely reflecting mirror arranging that set gradually along semiconductor laser stacks stacks as high direction, wherein the 1st spectroscope is suitable with semiconductor laser stacks stacks as high, n spectroscope and completely reflecting mirror are parallel uniformly-spaced to be arranged, become 30-60 ° of setting with semiconductor laser stacks light direction, the reverberation of the 1st spectroscopical transmitted light and all the other n-1 spectroscope and completely reflecting mirror forms laser beam expanding jointly,
N spectroscopical light transmission rate difference, makes the 1st spectroscopical transmitted light energy equate with the energy of reflection light of all the other n-1 spectroscope and completely reflecting mirror:
The 1st spectroscopical transmitance is 1/ (n+1), and reflectivity is n/ (n+1);
M spectroscopical transmitance is that (n-m+1)/(n-m+2), reflectivity is 1/ (n-m+2);
Wherein, n is the total number of spectroscope, and m is spectroscopical arrangement sequence number, 1<m≤n, and the order that arrangement sequence number is passed through successively according to laser is arranged in numerical order.
2. the parallel beam expand device of a high-power semiconductor laser, it is characterized in that: comprise the semiconductor laser stacks setting gradually along light path, collimation lens set and beam splitting system, described semiconductor laser stacks forms by several semiconductor laser units are stacking, described beam splitting system comprises n the spectroscope and the last completely reflecting mirror arranging that set gradually along semiconductor laser stacks light direction, wherein the 1st spectroscope is suitable with semiconductor laser stacks stacks as high, n spectroscope and completely reflecting mirror are parallel uniformly-spaced to be arranged, become 30-60 ° of setting with semiconductor laser stacks light direction, the reverberation of n spectroscope and completely reflecting mirror forms laser beam expanding jointly,
N spectroscopical light transmission rate difference, equates the energy of reflection light of n spectroscope and completely reflecting mirror:
M spectroscopical reflectivity is 1/ (n-m+2), and transmitance is (n-m+1)/(n-m+2);
Wherein, n is the total number of spectroscope, and m is spectroscopical arrangement sequence number, 1≤m≤n, and the order that arrangement sequence number is passed through successively according to laser is arranged in numerical order.
3. the parallel beam expand device of high-power semiconductor laser according to claim 1 and 2, it is characterized in that: described semiconductor laser unit is the semiconductor laser chip being welded on heat sink, described semiconductor laser chip is a single tube chip, mini bar or bar bar, or is multiple single tube chips, mini bar or bar bar.
4. the parallel beam expand device of high-power semiconductor laser according to claim 1 and 2, it is characterized in that: described collimation lens set comprises one of fast axis collimation lens and slow axis collimating lens or both, wherein, fast axis collimation lens is collimation D type non-spherical lens, and slow axis collimating mirror is single array cylindrical lens.
5. the parallel beam expand device of high-power semiconductor laser according to claim 1 and 2, is characterized in that: the basis material of described completely reflecting mirror is glass or metal, plated surface high-reflecting film; Or high-reflecting film adopts multilayer dielectric reflective coating.
6. the parallel beam expand device of high-power semiconductor laser according to claim 1 and 2, is characterized in that: described spectroscopical basis material is glass, and spectroscope plated surface increases anti-film, and the material that increases anti-film is zinc sulphide-magnesium fluoride film system.
7. the parallel beam expand device of high-power semiconductor laser according to claim 1 and 2, is characterized in that: described spectroscope is arranged on the fixed mount with scale together with completely reflecting mirror, and the material of fixed mount is plastics, aluminium, steel or copper.
8. the parallel beam expand device of high-power semiconductor laser according to claim 1 and 2, is characterized in that: spectroscopical light transmission rate is not both and adopts the plated film of different size to realize.
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| CN106383354A (en) * | 2016-12-15 | 2017-02-08 | 北醒（北京）光子科技有限公司 | Coaxial device without blind area |
| CN107870429A (en) * | 2016-09-26 | 2018-04-03 | 精工爱普生株式会社 | Retina scanning type display device and beam diameter amplifier element |
| CN108604017A (en) * | 2016-02-22 | 2018-09-28 | 株式会社日立高新技术 | Dichroscope array |
| CN108761808A (en) * | 2018-08-29 | 2018-11-06 | 西安炬光科技股份有限公司 | Semiconductor laser module and the semiconductor device of both-end output |
| WO2019092412A1 (en) * | 2017-11-08 | 2019-05-16 | Coldquanta Uk Limited | Optical manipulation of atoms or molecules |
| CN110459958A (en) * | 2019-09-16 | 2019-11-15 | 中国人民解放军国防科技大学 | High-power semiconductor laser array wavelength locking and line width compression device and method |
| WO2022016753A1 (en) * | 2020-07-23 | 2022-01-27 | 山东华光光电子股份有限公司 | Optical processing method for semiconductor laser stack array |
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| CN110459958A (en) * | 2019-09-16 | 2019-11-15 | 中国人民解放军国防科技大学 | High-power semiconductor laser array wavelength locking and line width compression device and method |
| CN110459958B (en) * | 2019-09-16 | 2024-05-24 | 中国人民解放军国防科技大学 | High-power semiconductor laser array wavelength locking and linewidth compressing device and method |
| WO2022016753A1 (en) * | 2020-07-23 | 2022-01-27 | 山东华光光电子股份有限公司 | Optical processing method for semiconductor laser stack array |
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Address after: 710077 Xi'an hi tech Zone 56, Xi'an, Shaanxi Province, No. 56 Patentee after: FOCUSLIGHT TECHNOLOGIES INC. Address before: 710119 Third Floor, Building 10, 17 Information Avenue, New Industrial Park, Xi'an High-tech Zone, Shaanxi Province Patentee before: Xi'an Focuslight Technology Co., Ltd. |