CN102313995A - Light beam shaping system of semiconductor laser arrays - Google Patents

Abstract

The invention provides a light beam shaping system of semiconductor laser arrays which are densely lined in one dimension and in two dimensions and are not densely lined in two dimensions. A light beam cutting device in the optical shaping system comprises a plurality of cuboid transparent optical material layers which are stacked and have equal thickness; angles between light beam incident end surfaces in all layers which are sequentially lined along a stacking direction and side surfaces which are in parallel with light beam incident directions are increasing or decreasing; and vertical distances between incident end surfaces and emission end surfaces in all the layers or the distances along the incident directions of light beams are same. A light beam rearrangement unit of the optical shaping system is made of a cuboid transparent optical material, and the cuboid is uniformly divided into a plurality of layers along a thickness direction; each layer contains an air gap band; the inclination angles of the air gap bands in all the layers are same or complementary; and the band width values of the air gap bands of the layers which are sequentially lined along the thickness direction form a decreasing arithmetic progression. The light beam cutting unit and the light beam rearrangement unit contain the same number of layers, and the stacking directions of the layers are vertical.

Description

The beam shaping system of semiconductor laser array

Technical field

The present invention relates to a kind of optical system, specifically, relate to a kind of beam shaping system of semiconductor laser array.

Background technology

Semiconductor laser is because of electro-optical efficiency is high, volume is little and in light weight having obtained used widely.Therefore but single semiconductor laser can't be exported high power (greater than hectowatt), has occurred a plurality of semiconductor lasers are arranged in the laser array that forms the bar battle array together and a plurality of battle arrays are piled up formation face battle array.Receive restrictions such as technology, cooling, shaping methods, semiconductor laser array can not be done very longly, generally is about 10mm at present.The semiconductor laser that constitutes semiconductor laser array is generally edge-emission N-type semiconductor N laser instrument, and this semiconductor laser comprises a p-n junction, and current vertical is injected in this p-n junction, and laser then emits from the lateral edge of this p-n junction.Fig. 1 shows the synoptic diagram of existing one dimension semiconductor laser array.In an example of one dimension semiconductor laser array 1 shown in Figure 1, array length is about 10mm, and the bright dipping side of single luminous zone is of a size of 150 μ m * 1 μ m, and the spacing of adjacent luminous zone is 500 μ m.Because the section of the luminous zone of edge-emission N-type semiconductor N laser instrument is narrow; Thereby the light beam of its output (is called slow-axis direction in the direction that is parallel to p-n junction; Also be the directions X among Fig. 1) and the direction (being called quick shaft direction, also is the Y direction among Fig. 1) perpendicular to p-n junction on the different angles of divergence is arranged, be 50 ° to 60 ° in the angle of divergence of quick shaft direction; The angle of divergence at slow-axis direction is 5 ° to 10 °; And the light beam of its output is also different with diameter with the position with a tight waist on the slow-axis direction at quick shaft direction, have serious astigmatism, thereby the scioptics system focuses on simply.

Laser beam quality is good and bad to be estimated through light beam parameters product (BPP), and light beam parameters product BPP is defined as waist radius (R) and the product of far-field divergence angle half-angle (θ) on certain direction, and unit is mmmrad.The light beam parameters product BPP of fast axle _fBe generally 1～2mmmrad, the light beam parameters product BPP of slow axis _sBe 500mmmrad, the light beam parameters product of fast and slow axis differs hundreds of times, thereby is difficult to this light beam is focused on.

For the quality of the output beam that improves semiconductor laser array, must carry out shaping to it, to obtain the angle of divergence and all very little symmetrical hot spot of spot diameter.Beam shaping is exactly the light beam parameters product homogenising with the fast and slow axis of light beam; Promptly the bar shaped collimated light beam is divided into the N section from slow-axis direction through optical element; Then this N section is superposeed on quick shaft direction, like this, the light beam parameters on the slow-axis direction amasss and is reduced to original 1/N; Be increased to original N doubly and the light beam parameters on the fast axle is long-pending, thus the light beam parameters product homogenising of the fast and slow axis of light beam.Fig. 2 is the synoptic diagram that the light beam of one dimension semiconductor laser array is carried out shaping; Wherein, Top in Fig. 2 shows shaping optical system, and the bottom in Fig. 2 schematically shows the section configuration of the light beam at some the node place in the said shaping optical system.As shown in Figure 2, at first, the laser beam that one dimension semiconductor laser array 1 sends collimates respectively to obtain quasi-parallel light through fast and slow axis collimation lens 2.The section configuration of light beam behind the collimation at Node B 1 place is strip.Then; Light beam behind the collimation is through light beam cutter unit 4; Become the N section light beam of step-like distribution at Node B 2 places through the light beam behind the light beam cutter unit 4; The N section light beam of step-like distribution through light beam rearrangement unit 5, becomes the stack of said N section light beam again at Node B 3 places through the light beam behind the light beam rearrangement unit 5.The light beam at Node B 3 places is little in the size of slow-axis direction (being the directions X among Fig. 2), through 7 backs, the slow axis beam-expanding collimation unit rectangular light spot that to become section at Node B 4 places be fast and slow axis light beam parameters product homogenising.Final beam can be focused into uniform some hot spot through spherical surface focusing lens 8.

At present, the light beam cutter unit 4 that is used for the beam shaping system of semiconductor laser array generally is divided into reflection type optical element, refraction-reflection optical element and refraction type optical element with light beam rearrangement unit 5 optical elements such as grade.

Said reflective shaping comprises two notch cuttype catoptrons of symmetry fully with optical element; Each notch cuttype catoptron comprises N high reflectance minute surface again; Light beam is divided into N cross-talk light beam after through first notch cuttype catoptron on slow-axis direction; After the reflection of each cross-talk light beam through the corresponding minute surface in second notch cuttype catoptron, align is got up on quick shaft direction.The shortcoming of the optical element that this shaping is used is that the difficulty of processing of notch cuttype catoptron is big.

Said refraction-reflection shaping utilizes refraction and the total reflection of two groups of prisms to realize cutting apart of light beam with optical element and resets.The shortcoming of the optical element that this shaping is used is the bad control in accurate location between prism, and the assembling of prism is difficulty relatively.

Said refraction type shaping then reflects the homogenize that realizes light beam through light beam is carried out one or many with optical element.This type of shaping can be processed through grin lens array, microtrabeculae lens arra, prism combination, optical glass plate heap or the beam splitting refractor of banking up with optical element.This type of shaping closely is formed by stacking a plurality of optical glass thin slices with optical element, and the efficiency ratio of shaping is higher.

The above-mentioned optical element that in the beam shaping system, is used for light beam cutting and light beam rearrangement all manufactures and designs more complicated, assembling difficulty, is difficult for problems such as adjusting and cumulative errors are big existing in varying degrees.

Summary of the invention

The beam shaping system that the object of the present invention is to provide a kind of semiconductor laser array is to overcome employed light beam cutter unit in the above-mentioned beam shaping system and the light beam rearrangement unit design is complicated, assembling difficulty, location out of true, cumulative errors are big, be difficult for the one or more shortcomings in the shortcomings such as adjusting.

To achieve these goals; On the one hand; The present invention provides a kind of beam shaping system of one dimension semiconductor laser array; It comprises one dimension semiconductor laser array, fast and slow axis beam collimation unit, light beam cutter unit, light beam rearrangement unit and slow axis beam-expanding collimation unit that optics coupling is sequentially got up; Wherein, said light beam cutter unit comprises the transparent optical material layer that a range upon range of N thickness equates, N is a natural number; N >=2; Said each transparent optical material layer is flat cuboid, and the side of the pair of parallel of this cuboid is respectively the incident end face and the outgoing end face of said semiconductor laser array light beam, and another of this cuboid is to the incident direction of parallel parallel sided in said semiconductor laser array light beam; The parallelogram bottom surface of this cuboid and the bottom surface portions of adjacent transparent optical material layer stack; Wherein, the said light beam incident end face in tactic said each transparent optical material layer of said stacked direction is with respect to the said side angulation increasing or decreasing that is parallel to said semiconductor laser array light beam incident direction, and the said incident end face in said each transparent optical material layer is identical with the vertical range between the outgoing end face or identical along the distance of said light beam incident direction; Said light beam rearrangement unit is processed by the rectangular parallelepiped transparent optical material; This rectangular parallelepiped transparent optical material also is divided into N range upon range of layer equably along thickness direction; Comprise and clearance band this layer uniform thickness, that between two surfaces that comprise length dimension and thickness dimension of said rectangular parallelepiped, extend in each said layer; Two edge surfaces of this clearance band are two planes that are parallel to said thickness direction and are parallel to each other; The edge surface of the said clearance band in any two said layers is identical or complementary with respect to the surperficial angulation that comprises length dimension and thickness dimension of said rectangular parallelepiped; Value along vertical directed distance between two edge surfaces of the said clearance band in tactic each the said layer of said thickness direction constitutes the arithmetic progression that successively decreases; Wherein, Between two edge surfaces of the said clearance band in first layer the value of vertical directed distance be made as on the occasion of; The symbol of the value of two vertical directed distances if this successively decreases in the arithmetic progression is identical; Then expression is identical with respect to the surperficial angulation that comprises length and thickness dimension of said rectangular parallelepiped with the edge surface of said clearance band in corresponding two layers of the value of these two vertical directed distances; The opposite in sign of the value of two vertical directed distances if this successively decreases in the arithmetic progression; Then the edge surface of the said clearance band in expression and corresponding two layers of the value of these two vertical directed distances is complementary with respect to the surperficial angulation that comprises length dimension and thickness dimension of said rectangular parallelepiped, and the value of a vertical directed distance if this successively decreases in the arithmetic progression is zero, and then the vertical directed distance with this of expression is the continuous transparent optical material layer that does not comprise the clearance band for corresponding layer; And the stacked direction of said N transparent optical material layer in said light beam cutter unit and the said light beam rearrangement unit is vertical each other.

Preferably, said light beam cutter unit and said light beam rearrangement unit can maybe can form through said N transparent optical material layer amalgamation through said N the integrated formation of transparent optical material layer.Further preferably; In said light beam cutter unit, the said light beam incident end face in tactic said each transparent optical material layer of said stacked direction can constitute arithmetic progression with respect to the said side angulation of the incident direction that is parallel to said semiconductor laser array light beam.

In addition, preferably, can get

BPP _sBe the beam parameter product of the slow-axis direction of said semiconductor laser array, BPP _fBe the beam parameter product of the quick shaft direction of said semiconductor laser array, [] is for rounding symbol; Thickness d on the stacked direction of the said transparent optical material layer of said light beam cutter unit ₁Can be the length L en of the strip light spots on the said light beam incident end face that incides said light beam cutter unit; Thickness d on the stacked direction of the said transparent optical material layer of said light beam rearrangement unit ₂Can be d ₂=| μ (n ₁) L ₁Δ α ₁(N-1) |+W, wherein, L ₁For the light beam incident end face of each transparent optical material layer on the said light beam cutter unit and the vertical range between the light beam outgoing end face or along the distance of light beam incident direction, Δ α ₁Be poor with respect to the side angulation that is parallel to the light incident direction of the light beam incident end face in the adjacent two layers of said light beam cutter unit, W is the width of said strip light spots, n ₁Be the refractive index of the transparent optical material that forms said light beam cutter unit, n ₀Be the refractive index of air, μ (n ₁) be that (α, n) angle α asks behind the partial derivative angle α to average the function mu (n) of gained at n=n to following function k again ₁The time value, and

$k(\mathrm{\&alpha;},n)=\frac{\cos (\mathrm{\&alpha;}+\mathrm{<figure-callout\; id="0"\; label="arcsin\; n"\; filenames="HDA0000089337400000051.png"\; state="\{\{state\}\}">arcsin</figure-callout>}\frac{n_{}}{}\frac{{}_0\&CenterDot;\cos \mathrm{\&alpha;}}{n})}{\cos \left(\mathrm{<figure-callout\; id="0"\; label="arcsin\; n"\; filenames="HDA0000089337400000051.png"\; state="\{\{state\}\}">arcsin</figure-callout>}\frac{n_{}}{}\frac{{}_0\&CenterDot;\cos \mathrm{\&alpha;}}{n}\right)};$

The absolute value delta of the difference of vertical directed distance between two edge surfaces of the clearance band in the adjacent two layers on the said light beam rearrangement unit ₂Can for:

${\mathrm{\&Delta;}}_2=\frac{\mathrm{len}}{N\&CenterDot;f({\mathrm{\&beta;}}_2,n_2)}$

Wherein, β ₂Or π-β ₂Be the edge surface of the clearance band in each layer on the said light beam rearrangement unit the surperficial angulation that comprises length dimension and thickness dimension, n with respect to this light beam rearrangement unit ₂Be the refractive index of the transparent optical material that forms said light beam rearrangement unit, f (β ₂, n ₂) be that (β is n) at β=β for following function f ₂, n=n ₂The time value, and

$f(\mathrm{\&beta;},n)=\left|\frac{\cos (\mathrm{\&beta;}+\arcsin \frac{n\&CenterDot;\cos \mathrm{\&beta;}}{n_0})}{\cos \left(\arcsin \frac{n\&CenterDot;\cos \mathrm{\&beta;}}{n_0}\right)}\right|.$

Further preferably, can pass through W=| μ (n ₁) L ₁Δ α ₁| confirm Δ α ₁

Moreover; Preferably; In said light beam rearrangement unit; Along in tactic said N of the said thickness direction layer, the value of the vertical directed distance between the edge surface of the clearance band in the value of the vertical directed distance between the edge surface of the clearance band in the 1st layer and the N layer is can is-symbol opposite, and absolute value is equal; Wherein when N is odd number, layer can be along tactic (N+1)/2 of said thickness direction for not comprising the continuous transparent optical material layer of said clearance band.

On the other hand; The present invention also provides a kind of beam shaping system of two-dimentional solid matter semiconductor laser array; It comprises two-dimentional solid matter semiconductor laser array, fast and slow axis beam collimation unit, fast axial light bundle compression unit, light beam cutter unit, light beam rearrangement unit and slow axis beam-expanding collimation unit that optics coupling is sequentially got up; Wherein, Said light beam cutter unit is the light beam cutter unit in the above-mentioned arbitrary beam shaping system; Said light beam rearrangement unit is the light beam rearrangement unit in the above-mentioned arbitrary beam shaping system, and said light beam cutter unit is identical with the number N of the said transparent optical material layer that said light beam rearrangement unit is comprised, and the stacked direction of the said transparent optical material layer in said light beam cutter unit and the said light beam rearrangement unit is vertical each other.

Again on the one hand; The present invention also provides the beam shaping system of the non-solid matter semiconductor laser array of a kind of two dimension; It comprises two-dimentional non-solid matter semiconductor laser array, fast and slow axis beam collimation unit, light beam cutter unit, light beam rearrangement unit and slow axis beam-expanding collimation unit; Wherein, Said light beam cutter unit is the light beam cutter unit in the above-mentioned arbitrary beam shaping system; Said light beam rearrangement unit comprises that a plurality of said light beam cutter unit is identical with the number N of the said transparent optical material layer that said light beam rearrangement unit is comprised along the light beam rearrangement unit in the above-mentioned arbitrary beam shaping system that thickness direction is arranged, and the stacked direction of the said transparent optical material layer in said light beam cutter unit and the said light beam rearrangement unit is vertical each other.

In addition; In above-mentioned various beam shaping system; Also can be that said light beam cutter unit is with the structure optical element replacement identical with the structure of said light beam rearrangement unit, and said light beam rearrangement unit is with the structure optical element replacement identical with the structure of said light beam cutter unit.

As stated; The beam shaping system of semiconductor laser array of the present invention can realize the shaping purpose of semiconductor laser array light beam; And light beam cutter unit wherein and light beam rearrangement unit have and manufacture and design simple, compact conformation, advantage such as adjustings easily, if make through integrated molding, also have advantages such as the location is accurate, no cumulative errors; Above-mentioned Design for optical system, manufacturing and use have been made things convenient for widely; And can reduce the loss of luminous power, and improve shaping efficient, be particularly suitable for the beam shaping of large power semiconductor laser array.

Description of drawings

Fig. 1 is a perspective diagram, shows existing one dimension semiconductor laser array;

Fig. 2 is a schematic diagram, shows the principle of the beam shaping of one dimension semiconductor laser array, and wherein, this figure top shows shaping optical system, and this figure bottom shows the section configuration of the light beam at some the node places in the said shaping optical system;

Fig. 3 is a planimetric map, shows twice refraction of the light in first dioptric system;

Fig. 4 is a planimetric map, shows twice refraction of the light in second dioptric system;

Fig. 5 is that (α is n) with the variation relation figure of angle [alpha] for function k;

Fig. 6 is a skeleton view, shows that one embodiment of the present of invention are described to be used for the light beam cutter unit that the semiconductor laser array light beam is cut apart;

Fig. 7 is a planimetric map, show light beam cutter unit among Fig. 6 along the transparent optical material projection of folded direction layer by layer;

Fig. 8 is a skeleton view, shows the described light beam rearrangement unit that is used for the semiconductor laser array light beam rearrangement of one embodiment of the present of invention;

Fig. 9 is a planimetric map, show light beam rearrangement unit among Fig. 8 along the transparent optical material projection of folded direction layer by layer;

Figure 10 is the light path synoptic diagram, shows the beam shaping system of the described one dimension semiconductor laser array of one embodiment of the present of invention;

Figure 11 is the light path synoptic diagram, shows the beam shaping system of the described two-dimentional solid matter semiconductor laser array of one embodiment of the present of invention; And

Figure 12 is the light path synoptic diagram, shows the beam shaping system of the non-solid matter semiconductor laser array of the described two dimension of one embodiment of the present of invention.

Embodiment

The beam shaping element and the system implementation example of semiconductor laser array of the present invention are described below with reference to accompanying drawing.Those of ordinary skill in the art can recognize, under situation without departing from the spirit and scope of the present invention, can revise described embodiment with various mode or its combination.Therefore, accompanying drawing is illustrative with being described in essence, rather than is used to limit the protection domain of claim.In addition, in this manual, accompanying drawing is not in scale to be drawn, and identical Reference numeral is represented identical part.

As noted earlier, can utilize refraction effect to realize that the light beam of semiconductor laser array cuts apart and reset, thereby realize beam shaping.Fig. 3 and Fig. 4 show twice refraction of the light in first dioptric system and second dioptric system respectively.These two kinds of dioptric systems are two modification of a design (that is, make light pass through twice refraction and realize translation).First dioptric system shown in Figure 3 is the cuboid processed by transparent optical material (for example clear optical glass, transparent resin etc.) (being that the bottom surface is that parallelogram and lateral vertical are in the quadrangular of bottom surface), and its refractive index is n, and the refractive index of air is n ₀This cuboid comprises the upper side 41 that is parallel to incident beam S and incident end face 45 and outgoing end face 46 and two the parallelogram bottom surfaces (being the paper among Fig. 3) of downside 42, light beam S.The light beam incident end face 45 of this cuboid with respect to the downside that is parallel to the incident beam direction 42 angulations be α (promptly; Rotate counterclockwise the angle that rotate on the plane at light beam incident end face 45 places from the plane at the downside that is parallel to the incident beam direction 42 places), the vertical range between its light beam incident end face 45 and the light beam outgoing end face 46 is L.In Fig. 3; S ' passes the position behind this cuboid, S if expression is parallel to the incident beam S of upper side 41, downside 42 and the bottom surface of this cuboid along straight ahead " represent this light beam in this cuboid through the actual outgoing position during from its light beam outgoing end face 46 outgoing after twice refraction.After twice refraction, outgoing beam S " be D with respect to the side-play amount of incident beam S.Refraction law according to light is easy to calculate, in said first dioptric system, light beam through twice refraction after, outgoing beam with respect to the side-play amount D=k of incident beam (α, n) L, wherein,

$k(\mathrm{\&alpha;},n)=\frac{\cos (\mathrm{\&alpha;}+\mathrm{<figure-callout\; id="0"\; label="arcsin\; n"\; filenames="HDA0000089337400000051.png"\; state="\{\{state\}\}">arcsin</figure-callout>}\frac{n_{}}{}\frac{{}_0\&CenterDot;\cos \mathrm{\&alpha;}}{n})}{\cos \left(\mathrm{<figure-callout\; id="0"\; label="arcsin\; n"\; filenames="HDA0000089337400000051.png"\; state="\{\{state\}\}">arcsin</figure-callout>}\frac{n_{}}{}\frac{{}_0\&CenterDot;\cos \mathrm{\&alpha;}}{n}\right)}$

Fig. 5 is that (α, n) with the variation relation figure of angle [alpha], wherein solid dot shows function k (α, n) with the angle [alpha] variation relation, in calculating, the refractive index n of transparent optical material gets 1.5 function k.From Fig. 5 can see k (α, n)=-k (π-α, n), and this variation relation in 45 ° to 135 ° scope very near linear relationship.Therefore when L is constant, Δ D ≈ μ (n) L Δ α is arranged, wherein; Δ α is the increment of angle [alpha]; Δ D is the increment of outgoing beam with respect to the side-play amount of incident beam, and μ (n) can be taken as, for example; (α, n) angle α asks behind the partial derivative the average function about refractive index n of gained of angle α to function k again.In addition; Angle [alpha] is at 45 ° within 135 ° the time; Very approaching between incident end face 45 and the outgoing end face 46 along the distance of light beam incident direction and the vertical range between them, therefore, if angle [alpha] is selected between 45 ° to 135 °; Can use between incident end face 45 and the outgoing end face 46 distance along the light beam incident direction as the L in the above-mentioned formula so, like this can simplified measurement.

(α, n) L and Fig. 3 and Fig. 5 can use two offset directions of outgoing beam with respect to the symbolic representation light beam of the algebraic value of the side-play amount of incident beam referring to formula D=k.For example, when α＜90 °, D＞0, the downward deviation of light beam, and along with the increase of α, this deviation reduces linearly; And when α＞90 °, D＜0, the light beam deviation that makes progress, and along with the increase of α, this deviation increases linearly.

Second dioptric system shown in Figure 4 is to be processed by rectangular parallelepiped transparent optical material (for example clear optical glass, transparent resin etc.), and the refractive index of wherein said transparent optical material is n, and the refractive index of air is n ₀Here, this rectangular parallelepiped comprises the upper side 41 that is parallel to incident beam S and incident end face 45 and outgoing end face 46 and two rectangular bottom surface (being the paper among Fig. 4) of downside 42, light beam S.This rectangular parallelepiped is included in the clearance band that extends between its upper side 41 and the downside 42 (two surfaces that promptly comprise length dimension and thickness dimension), two planes that two edge surfaces of this clearance band are perpendicular to said bottom surface (promptly being parallel to said thickness direction) and are parallel to each other.The edge surface of this clearance band with respect to downside 42 angulations (may also be referred to as the inclination angle of this clearance band) of this rectangular parallelepiped for β (promptly; Rotate counterclockwise the angle that rotate on the plane at the edge surface place of this clearance from the plane at the downside of this rectangular parallelepiped 42 places); Vertical directed distance between two edge surfaces of this clearance band (promptly point to the bee-line near the edge surface of light exit side face 46 from the edge surface near light-incident end 45, may also be referred to as the bandwidth of this clearance band) is G.In Fig. 4; S representes incident beam; S ' is if expression is passed the position behind this rectangular parallelepiped, S perpendicular to the incident beam S of incident end face 45 along straight ahead " represent this light beam in this second dioptric system through twice refraction after actual outgoing position during from its light beam outgoing end face 46 outgoing.After twice refraction, outgoing beam S " be D with respect to the side-play amount of incident beam S.Refraction law according to light is easy to calculate, in said second dioptric system, light beam through twice refraction after, outgoing beam with respect to the side-play amount D=f of incident beam (β, n) G, wherein,

$f(\mathrm{\&beta;},n)=\left|\frac{\cos (\mathrm{\&beta;}+\arcsin \frac{n\&CenterDot;\cos \mathrm{\&beta;}}{n_0})}{\cos \left(\arcsin \frac{n\&CenterDot;\cos \mathrm{\&beta;}}{n_0}\right)}\right|$

See from following formula, f (β, n)＞0, and have f (β, n)=f (π-β, n).When the inclination angle of clearance band only is β or π-β (wherein, β fixes), can stipulate; When the inclination angle of clearance band is β; The value G of the vertical directed distance between two edge surfaces of said clearance band be on the occasion of, then when the inclination angle was π-β, G was a negative value.Certainly, can stipulate also that when the inclination angle of clearance band was β, the value G of the vertical directed distance between two edge surfaces of said clearance band was a negative value, then when the inclination angle is π-β, G be on the occasion of.Like this, can be with the complementary vergence direction in two inclination angles of the symbolic representation clearance band of the algebraic value of the said vertical directed distance of clearance band.Simultaneously, can use two offset directions of outgoing beam with respect to the symbolic representation light beam of the algebraic value of the side-play amount of incident beam.

If the inclination angle of clearance band only is β or π-β (wherein, β fixes), so, outgoing beam is with respect to increment Delta D=f (β, n) the Δ G of the side-play amount of incident beam.

Utilize above-mentioned two kinds of dioptric systems can constitute the two kinds of beam shaping elements that can realize the cutting and the rearrangement of light beam.For example, Fig. 6 is a skeleton view, shows the light beam cutter unit that the described light beam that is used for semiconductor laser array of one embodiment of the present of invention is cut apart, and this light beam cutter unit has adopted the first dioptric system principle shown in Figure 3.Fig. 7 is a planimetric map, show light beam cutter unit among Fig. 6 along the transparent optical material projection of folded direction layer by layer.Like Fig. 6 and shown in Figure 7; The light beam cutter unit 40 that the described light beam that is used for semiconductor laser array of one embodiment of the present of invention is cut apart comprises that range upon range of N (is described for convenient; Here N=6; In fact, N can be for more than or equal to 2 natural number) the transparent optical material layer P11-P16 that equate of thickness, each transparent optical material layer is flat cuboid (being that the bottom surface is that parallelogram and lateral vertical are in the quadrangular of bottom surface).Said transparent optical material comprises for example clear optical glass, transparent resin etc., and its refractive index is n ₁, the refractive index of air is n ₀The side 45 and 46 of the pair of parallel of each cuboid P11-P16 is respectively the incident end face and the outgoing end face of said semiconductor laser array light beam; Another is parallel to the incident direction of said semiconductor laser array light beam to parallel side 41 and 42, the pair of parallel quadrilateral bottom surface 43 of each cuboid P11-P16 and 44 and the bottom surface portions of adjacent transparent optical material layer stack.In Fig. 6 and Fig. 7; Six hot spots that six light that 6 solid dot S1-S6 show a pair of side 41 that is parallel to said cuboid and 42 form on incident end face 45 when inciding each transparent optical material layer P11-P16; These six hot spots are in respectively in the incident end face 45 of 6 range upon range of layers of optical element 40, and said six pairing light of hot spot are propagated in the layer at place separately respectively, refraction.If the position on the picture plane is dropped on the right side among Fig. 6 and Fig. 7 as 6 hollow dots S1 ' on the plane-S6 ' said six pairing light of hot spot S1-S6 of expression along straight ahead, and the right side is as 6 solid dot S1 on the plane "-S6 " then show said six pairing light of hot spot S1-S6 and drop on the physical location on the picture plane through twice refraction belonging to the transparent optical material layer separately.In addition; Like Fig. 6 and shown in Figure 7; To P16, light beam incident end face 45 increases progressively with respect to side 42 angulations from transparent optical material layer P11, and the vertical range between light beam incident end face 45 and the light beam outgoing end face 46 or identical along the distance of light beam incident direction.Obviously, to P16, the light beam incident end face 45 of each transparent optical material layer also can successively decrease with respect to side 42 angulations from transparent optical material layer P11, does not so also influence enforcement of the present invention.Preferably, to P16, the light beam incident end face 45 of each transparent optical material layer constitutes the increasing or decreasing arithmetic progression with respect to side 42 angulations from transparent optical material layer P11.

Referring to Fig. 3 and Fig. 6, when the collimated light beam that uses 40 pairs of one dimension semiconductor laser arrays of light beam cutter unit is cut apart, preferably, at first can be according to the beam parameter product BPP of the slow-axis direction of this semiconductor laser array _sBeam parameter product BPP with the quick shaft direction of this semiconductor laser array _fConfirm the number of plies of light beam cutter unit 40

Wherein, [] is for rounding symbol.Then, can confirm the thickness d on the light beam cutter unit 40 said stacked directions according to the length L en of the strip light spots on the incident end face that incides light beam cutter unit 40 45 ₁=Len.The light beam incident end face 45 that is used for the adjacent layer on the light beam cutter unit 40 of light beam cutting is with respect to the side that is parallel to the light incident direction 42 angulation α ₁Difference Δ α ₁Can confirm according to the thickness W of said strip light spots.Specifically, if light beam is cut into appearance shown in Figure 2, then can pass through W=| μ (n ₁) L ₁Δ α ₁| confirm Δ α ₁, wherein, μ (n ₁) be that aforementioned functions μ (n) is at n=n ₁The time value, L ₁For the light beam incident end face 45 of light beam cutter unit 40 and the vertical range between the light beam outgoing end face 46 or along the distance of light beam incident direction.Should be noted that Δ α ₁Can also pass through Else Rule (for example W＞| μ (n ₁) L ₁Δ α ₁| or W＜| μ (n ₁) L ₁Δ α ₁|) select.

Light beam cutter unit 40 can also can form through the amalgamation of above-mentioned 6 transparent optical material layers (for example use optical adhesive bonding, use frame constraint etc.) through above-mentioned 6 integrated formation of transparent optical material layer.

Should note; Can easily see through top description with reference to figure 3; At first, said cuboid can not influence the side-play amount of outgoing beam with respect to incident beam along the translation of said light beam incident direction, in addition; When inciding light beam on the incident end face 45, correspondingly do equidirectional from the light beam of outgoing end face 46 outgoing with the amplitude translation along the incident end face translation.Like this, just very big dirigibility is provided, and needs the local less of departure during fabrication for the design of light beam cutter unit 40 and manufacturing.

On the other hand, Fig. 8 is a skeleton view, shows the described light beam rearrangement unit that is used for the light beam rearrangement of semiconductor laser array of one embodiment of the present of invention, and this light beam cutter unit has adopted the second dioptric system principle shown in Figure 4.Fig. 9 is a planimetric map, show light beam rearrangement unit among Fig. 8 along the transparent optical material projection of folded direction layer by layer.Like Fig. 8 and shown in Figure 9; The described light beam rearrangement unit 50 that is used for the light beam rearrangement of semiconductor laser array of one embodiment of the present of invention is processed by rectangular parallelepiped transparent optical material (for example clear optical glass, transparent resin etc.), and the refractive index of wherein said transparent optical material is n ₂, the refractive index of air is n ₀Here; Two surfaces that comprise length dimension and thickness dimension of this rectangular parallelepiped are called upper side 41 and downside 42 respectively; Two surfaces that comprise length dimension and width dimensions of this rectangular parallelepiped are called upper bottom surface 43 and bottom surface 44 respectively, two surfaces that comprise width dimensions and thickness dimension of this rectangular parallelepiped are called left surface (being the light beam incident end face) 45 and right flank (being light beam outgoing end face) 46 respectively.

Light beam rearrangement unit 50 is divided into the N layer equably along thickness direction, for convenient expression, is without loss of generality among Fig. 8, gets N=6.All comprise clearance band one and this layer uniform thickness, that between the upper side 41 of said rectangular parallelepiped and downside 42, extend in each layer, two planes of two edge surfaces of this clearance band for being parallel to said thickness direction (promptly perpendicular to upper bottom surface 43 and bottom surface 44) and being parallel to each other.Be similar to Fig. 4; The edge surface of the clearance band in each layer of light beam rearrangement unit shown in Figure 8 forms the angle of confirming with respect to the downside 42 of its residing rectangular parallelepiped, and the edge surface of the clearance band in any two layers is equal or complementary with respect to downside 42 angulations of its residing rectangular parallelepiped.Concrete referring to Fig. 8; Clearance band g21 in the tactic the 1st to the 6th layer of the thickness direction of said rectangular parallelepiped is identical or complementary with respect to the upper bottom surface 41 or bottom surface 42 angulations of this rectangular parallelepiped to g26; Specifically; Said angle in the 1st layer to the 3rd layer all equates, the said angle in the 4th to the 6th layer all equates, and the said angle in the 1st to the 3rd layer with the 4th to the 6th layer in said angle complementation.

In addition; 6 solid dot S1 on the light beam incident end face 45 of light beam rearrangement unit shown in Figure 8 "-S6 " show six light and incide formed six hot spots on the incident end face 45 along the length direction of said rectangular parallelepipeds; Pairing six light of these six hot spots incide respectively in 6 layers that evenly are divided into of light beam rearrangement unit 50, and in the layer that belongs to separately, propagate, reflect the back respectively from 46 outgoing of outgoing end face.6 hollow dots S1 on the outgoing end face 46 " if six pairing light of hot spot on '-S6 " ' expression incident end face 45 are along straight ahead and the outgoing position on outgoing end face 46,6 solid dot S1 on the outgoing end face 46 " "-S6 " " then show 6 pairing light of hot spot on the incident end face 45 through twice refraction of the clearance band in the place layer separately and the outgoing position of the reality on outgoing end face 46.

Be similar to the second dioptric system principle shown in Figure 4, for the light beam rearrangement unit among Fig. 8, when the inclination angle of clearance band is β ₂Or π-β ₂(wherein, β ₂Fix) time, can stipulate, when the inclination angle of clearance band is β ₂The time, the value of the vertical directed distance between two edge surfaces of said clearance band be on the occasion of, then when the inclination angle of clearance band be π-β ₂The time, the value of the vertical directed distance between two edge surfaces of said clearance band is a negative value.Certainly, also can stipulate, when the inclination angle of clearance band is β ₂The time, the value of the vertical directed distance between two edge surfaces of said clearance band is a negative value, then working as the inclination angle is π-β ₂The time, this value on the occasion of.Like this; Can be with two vergence directions of the symbolic representation clearance band of the algebraic value of the vertical directed distance between two edge surfaces of clearance band; That is: when the symbol of the algebraic value of the vertical directed distance between two edge surfaces of any two-layer air gap band is identical; The inclination angle of the clearance band during this is two-layer equates, otherwise the inclination angle of the clearance band during this is two-layer is complementary.Describe for convenient; The value G21 that at present stipulates vertical directed distance between two edge surface g21a and the g21b of the clearance band g21 in the 1st layer of light beam rearrangement shown in Figure 8 unit on the occasion of, then the value G26 of vertical directed distance is a negative value between two the edge surface g26a of the clearance band g26 in the 6th layer and the g26b.Simultaneously, can use two offset directions of outgoing beam with respect to the symbolic representation light beam of the algebraic value of the side-play amount of incident beam.Should be noted that afore mentioned rules just for convenience, does not influence the spirit and scope of the present invention.

In addition, in Fig. 8, the value G21 along the clearance band g21 in the tactic the 1st to the 6th layer of the thickness direction of said rectangular parallelepiped to the bandwidth of g26 is to the G26 formation arithmetic progression that successively decreases, and the value of wherein stipulating G21 is on the occasion of, i.e. G _2j=G ₂₁-(j-1) Δ ₂, j=1,2,3,4,5,6, Δ ₂Absolute value for the difference of the bandwidth of the clearance band in the adjacent two layers.Select suitable G21 and Δ ₂Value, can make G21=-G26, G22=-G25, G23=-G24.Although not shown, if said number of plies N is an odd number, for example, N=7 can select suitable G21 and Δ so ₂Value, make G21=-G27, G22=-G26, G23=-G25, G24=0, promptly middle layer (here the 4th layer) do not comprise the clearance band, is the transparent optical material layer that extends continuously.In other words, when N is odd number, in the middle of the bandwidth of clearance band of one deck be 0, be radiated in the middle of one deck and the light beam in this layer, propagated do not reflect.

When the light beam that has used being cut apart by light beam cutter unit 40 of the 50 pairs of one dimension semiconductor laser arrays in light beam rearrangement unit was reset, each the folded layer by layer direction that makes light beam rearrangement unit 50 clockwise rotated 90 ° with respect to each folded layer by layer direction of light beam cutter unit 40 in the plane perpendicular to the light incident direction.Light beam rearrangement unit 50 has been divided into the N layer equally, [] is for rounding symbol, the thickness d of light beam rearrangement unit 50 ₂Can confirm by following formula: d ₂=| μ (n ₁) L ₁Δ α ₁(N-1) |+W, wherein, and as previously mentioned, L ₁For the light beam incident end face of each transparent optical material layer on the said light beam cutter unit and the vertical range between the light beam outgoing end face or along the distance of light beam incident direction, Δ α ₁For the light beam incident end face in the adjacent two layers of said light beam cutter unit with respect to the side angulation α that is parallel to the light beam incident direction ₁Poor, W is the width of said strip light spots, μ (n ₁) be that aforementioned functions μ (n) is at n=n ₁The time value, n ₁Refractive index for the transparent optical material of said light beam cutter unit.

The absolute value delta of the difference of vertical directed distance between two edge surfaces of the clearance band in the adjacent layer of light beam rearrangement unit 50 ₂Can confirm by following formula:

${\mathrm{\&Delta;}}_2=\frac{\mathrm{Len}}{N\&CenterDot;f({\mathrm{\&beta;}}_2,n_2)}$

Wherein, β ₂(or π-β ₂) be the surperficial angulation that comprise length dimension and thickness dimension of the edge surface of the clearance band in each layer on the light beam rearrangement unit 50 with respect to this light beam rearrangement unit, n ₂Be the refractive index of the transparent optical material that forms light beam rearrangement unit 50, f (β ₂, n ₂) be that (β is n) at β=β for function f in second dioptric system shown in Figure 4 of front ₂, n=n ₂The time value, Len is the length that incides the strip light spots on the incident end face 45 of light beam cutter unit 40.

Light beam rearrangement unit 50 can perhaps can form through the amalgamation of above-mentioned 6 transparent optical material layers (for example use optical adhesive bonding, use frame constraint etc.) through above-mentioned 6 integrated formation of transparent optical material layer.

Should note; Can see easily that through top description at first, the clearance band in each layer of light beam rearrangement unit 50 can not influence the side-play amount of outgoing beam with respect to incident beam along the translation of the length direction of said rectangular parallelepiped with reference to figure 4 and Fig. 8; In other words; For said light beam rearrangement unit 50, the inclination angle and the bandwidth of importantly said clearance band, rather than the position of clearance band in each layer.Secondly, for the bandwidth of clearance band, the vergence direction and the bandwidth value G21 of the clearance band in the 1st layer can be provided with arbitrarily, importantly the absolute value delta of the difference of the bandwidth of the clearance band in the adjacent layer ₂The absolute value delta of the difference of this bandwidth ₂Determined light beam relative displacement between quilt each cross-talk light beam that is partitioned into after through light beam rearrangement unit 50.Like this, just very big dirigibility is provided, and needs the local less of departure during fabrication for the design of light beam rearrangement unit 50 and manufacturing.In addition, along the length direction of light beam rearrangement unit 50, when inciding light beam on the incident end face 45 of light beam rearrangement unit 50, correspondingly do equidirectional from the light beam of outgoing end face 46 outgoing with the amplitude translation along the Width translation of light beam rearrangement unit 50.

As noted earlier; The advantage that adopts first dioptric system to constitute the light beam cutter unit is, volume less (because incident end face in every layer and the vertical range between the outgoing end face or fix along the distance of light beam incident direction), and economical with materials is (during for example integrated this optical element of manufacturing; Only need process and get final product the edge of the germule of this element), (this optical element does not have space formation) firm in structure etc.; But shortcoming is, as previously mentioned, and when adopting first dioptric system that light beam is cut apart; Strictness says that the side-play amount of divided each sub-hot spot is with angle [alpha] ₁Variation relation be not linear, fortunately when light beam is cut apart, this deviation did not influence.The advantage that adopts second dioptric system to constitute the light beam rearrangement unit is, each sub-hot spot of having been cut apart is when resetting, and side-play amount is strict linear with the variation relation of the bandwidth of clearance band, and this point is very important for light beam rearrangement.

Obviously; Adopt second dioptric system formation light beam cutter unit and adopt first dioptric system to constitute the shaping that light beam still can be accomplished in the light beam rearrangement unit; Still have and manufacture and design simple, compact conformation, advantage such as adjusting easily; If make, also have advantages such as the location is accurate, no cumulative errors through integrated molding.In other words; Foregoing light beam cutter unit 40 can be a structure and the optical element of the structure identical (but structural parameters can be inequality) of said light beam rearrangement unit 50, and said light beam rearrangement unit 50 also can be the optical element of constructing with the structure identical (but structural parameters can be inequality) of said light beam cutter unit 40.Therefore, this combination still drops within the invention which is intended to be protected.In this combination, light beam cutter unit number of plies N, thickness d ₁, the clearance band in the adjacent layer two edge surfaces between the absolute value delta of difference of vertical directed distance ₁And the number of plies N of light beam rearrangement unit, thickness d ₂, the light beam incident end face in the adjacent layer is with respect to the difference Δ α of the side angulation that is parallel to the light incident direction ₂Can and utilize the formula of front to confirm at an easy rate according to the beam shaping principle, just be not described in detail here.

Three embodiment of the beam shaping system of semiconductor laser array of the present invention are described below with reference to Figure 10, Figure 11 and Figure 12.Figure 10 is the light path synoptic diagram; Show the beam shaping system of the described one dimension semiconductor laser array of one embodiment of the present of invention; Wherein, Figure 10 top shows the side view of this system, and Figure 10 middle part shows the vertical view of this system, and Figure 10 bottom shows the section configuration of the light beam at Node B 1, B2, B3 and B4 place in this system.Figure 11 is the light path synoptic diagram; Show the beam shaping system of the described two-dimentional solid matter semiconductor laser array of one embodiment of the present of invention; Wherein, Figure 11 top shows the side view of this system, and Figure 11 middle part shows the vertical view of this system, and Figure 11 bottom shows the section configuration of the light beam at Node B 1, B2, B3 and B4 place in this system.Figure 12 is the light path synoptic diagram; Show the beam shaping system of the non-solid matter semiconductor laser array of the described two dimension of one embodiment of the present of invention; Wherein, Figure 12 top shows the side view of this system, and Figure 12 middle part shows the vertical view of this system, and Figure 12 bottom shows the section configuration of the light beam at Node B 1, B2, B3 and B4 place in this system.All light beam section configurations among Figure 10 to Figure 12 are the shape in the XY plane.

In Figure 10-Figure 12; Adopt first dioptric system to constitute light beam cutter unit, employing second dioptric system formation light beam rearrangement unit although show; But in other embodiments; Also can adopt second dioptric system to constitute the light beam cutter unit, adopt first dioptric system to constitute the light beam rearrangement unit, detail no longer one by one here according to similar beam shaping principle.

Shown in figure 10, the beam shaping system of the described one dimension semiconductor laser array of one embodiment of the present of invention comprises one dimension semiconductor laser array 1, fast and slow axis beam collimation unit 2, light beam cutter unit 40, light beam rearrangement unit 50 and slow axis beam-expanding collimation unit 7.Light beam cutter unit 40 is identical with the number N of the said transparent optical material layer that light beam rearrangement unit 50 is comprised, the stacked direction quadrature of the said transparent optical material layer in light beam cutter unit 40 and the light beam rearrangement unit 50.Feature structure parameter in thickness, the number of plies and the adjacent layer of light beam cutter unit 40 and light beam rearrangement unit 50 is confirmed according to the description of front.

Shown in figure 11, the beam shaping system of the described two-dimentional solid matter semiconductor laser array of one embodiment of the present of invention comprises two-dimentional solid matter semiconductor laser array 1 ', fast and slow axis beam collimation unit 2, fast axial light bundle compression unit 3, light beam cutter unit 40, light beam rearrangement unit 50 and slow axis beam-expanding collimation unit 7.Spacing between the adjacent two row laser instruments in the two dimension solid matter semiconductor laser array 1 ' is general international standard spacing 1.8mm.Light beam cutter unit 40 is identical with the number N of the said transparent optical material layer that light beam rearrangement unit 50 is comprised, the stacked direction quadrature of the said transparent optical material layer in light beam cutter unit 40 and the light beam rearrangement unit 50.Feature structure parameter in thickness, the number of plies and the adjacent layer of light beam cutter unit 40 and light beam rearrangement unit 50 is confirmed according to the description of front.

Shown in figure 12, the beam shaping system of the non-solid matter semiconductor laser array of the described two dimension of one embodiment of the present of invention comprises one dimension semiconductor laser array 1 ", fast and slow axis beam collimation unit 2, light beam cutter unit 40, by a plurality of along light beam rearrangement unit 50 ' and slow axis beam-expanding collimation unit 7 that the range upon range of optical element 50 of thickness direction constitutes.The non-solid matter semiconductor laser array 1 of two dimension " in the spacing of adjacent two row between the laser instruments be 2mm-10mm.Light beam cutter unit 40 is identical with the number N of the said transparent optical material layer that each optical element 50 in the light beam rearrangement unit 50 ' is comprised, the stacked direction quadrature of the said transparent optical material layer in light beam cutter unit 40 and the light beam rearrangement unit 50 '.Feature structure parameter in thickness, the number of plies and the adjacent layer of each optical element 50 in light beam cutter unit 40 and the light beam rearrangement unit 50 ' is confirmed according to the description of front.

Much more no longer Figure 10 extremely principle of work of optical system shown in Figure 12 is similar to optical system shown in Figure 2, to do description here.The optical system of the semiconductor laser array beam shaping that Figure 10 is extremely shown in Figure 12 also can comprise the spherical surface focusing lens 8 that are used for the uniform light spots of slow axis beam-expanding collimation unit 7 outputs is focused into a hot spot.

As stated; The beam shaping system of semiconductor laser array of the present invention can realize the shaping purpose of semiconductor laser array light beam; But and the employed light beam cutter unit of system and light beam rearrangement unit have the location accurately, compact conformation integrated molding, no cumulative errors, the advantage of adjusting easily; Design, manufacturing and the use of said system have been made things convenient for widely; And can reduce the loss of luminous power, and improve shaping efficient, be particularly suitable for the beam shaping of large power semiconductor laser array.

The beam shaping system of semiconductor laser array of the present invention has as above been described with the mode of example with reference to accompanying drawing.But, it will be appreciated by those skilled in the art that and can also on the basis that does not break away from content of the present invention, make various improvement for the described semiconductor laser array beam shaping of the invention described above system.Therefore, protection scope of the present invention should be confirmed by the content of appending claims.

Claims (9)

1. the beam shaping system of an one dimension semiconductor laser array comprises one dimension semiconductor laser array, fast and slow axis beam collimation unit, light beam cutter unit, light beam rearrangement unit and slow axis beam-expanding collimation unit that optics coupling is sequentially got up, wherein,

Said light beam cutter unit comprises the transparent optical material layer that a range upon range of N thickness equates; N is a natural number; N >=2; Said each transparent optical material layer is flat cuboid; The side of the pair of parallel of this cuboid is respectively the incident end face and the outgoing end face of said semiconductor laser array light beam; Another of this cuboid is to the incident direction of parallel parallel sided in said semiconductor laser array light beam, and the parallelogram bottom surface of this cuboid and the bottom surface portions of adjacent transparent optical material layer stack, wherein; Said light beam incident end face in tactic said each transparent optical material layer of said stacked direction is with respect to the said side angulation increasing or decreasing of the incident direction that is parallel to said semiconductor laser array light beam, and the said incident end face in said each transparent optical material layer is identical with the vertical range between the outgoing end face or identical along the distance of said light beam incident direction;

Said light beam rearrangement unit is processed by the rectangular parallelepiped transparent optical material; This rectangular parallelepiped transparent optical material also is divided into N range upon range of layer equably along thickness direction; Comprise and clearance band this layer uniform thickness, that between two surfaces that comprise length dimension and thickness dimension of said rectangular parallelepiped, extend in each said layer; Two edge surfaces of this clearance band are two planes that are parallel to said thickness direction and are parallel to each other; The edge surface of the said clearance band in any two said layers is identical or complementary with respect to the surperficial angulation that comprises length dimension and thickness dimension of said rectangular parallelepiped; Value along vertical directed distance between two edge surfaces of the said clearance band in tactic each the said layer of said thickness direction constitutes the arithmetic progression that successively decreases; Wherein, Between two edge surfaces of the said clearance band in first layer the value of vertical directed distance be made as on the occasion of; The symbol of the value of two vertical directed distances if this successively decreases in the arithmetic progression is identical; Then expression is identical with respect to the surperficial angulation that comprises length and thickness dimension of said rectangular parallelepiped with the edge surface of said clearance band in corresponding two layers of the value of these two vertical directed distances; The opposite in sign of the value of two vertical directed distances if this successively decreases in the arithmetic progression; Then the edge surface of the said clearance band in expression and corresponding two layers of the value of these two vertical directed distances is complementary with respect to the surperficial angulation that comprises length dimension and thickness dimension of said rectangular parallelepiped, and the value of a vertical directed distance if this successively decreases in the arithmetic progression is zero, and then the vertical directed distance with this of expression is the continuous transparent optical material layer that does not comprise the clearance band for corresponding layer; And

The stacked direction of said N transparent optical material layer in said light beam cutter unit and the said light beam rearrangement unit is vertical each other.

2. the beam shaping system of one dimension semiconductor laser array according to claim 1; Wherein, Said light beam cutter unit and said light beam rearrangement unit be through said N the integrated formation of transparent optical material layer, or form through said N transparent optical material layer amalgamation.

3. the beam shaping system of one dimension semiconductor laser array according to claim 2; Wherein, In said light beam cutter unit, the said light beam incident end face in tactic said each transparent optical material layer of said stacked direction constitutes arithmetic progression with respect to the said side angulation of the incident direction that is parallel to said semiconductor laser array light beam.

4. the beam shaping system of one dimension semiconductor laser array according to claim 1, wherein,

BPP _sBe the beam parameter product of the slow-axis direction of said semiconductor laser array, BPP _fBe the beam parameter product of the quick shaft direction of said semiconductor laser array, [] is for rounding symbol;

Thickness d on the stacked direction of the said transparent optical material layer of said light beam cutter unit ₁Length L en for the strip light spots on the said light beam incident end face that incides said light beam cutter unit;

Thickness d on the stacked direction of the said transparent optical material layer of said light beam rearrangement unit ₂Be d ₂=| μ (n ₁) L ₁Δ α ₁(N-1) |+W, wherein, L ₁For the light beam incident end face of each transparent optical material layer on the said light beam cutter unit and the vertical range between the light beam outgoing end face or along the distance of light beam incident direction, Δ α ₁Be poor with respect to the side angulation that is parallel to the light incident direction of the light beam incident end face in the adjacent two layers of said light beam cutter unit, W is the width of said strip light spots, n ₁Be the refractive index of the transparent optical material that forms said light beam cutter unit, n ₀Be the refractive index of air, μ (n ₁) be that (α, n) angle α asks behind the partial derivative angle α to average the function mu (n) of gained at n=n to following function k again ₁The time value, and

$k(\mathrm{\&alpha;},n)=\frac{\cos (\mathrm{\&alpha;}+\arcsin \frac{n_0\&CenterDot;\cos \mathrm{\&alpha;}}{n})}{\cos \left(\arcsin \frac{n_0\&CenterDot;\cos \mathrm{\&alpha;}}{n}\right)};$

The absolute value delta of the difference of vertical directed distance between two edge surfaces of the clearance band in the adjacent two layers on the said light beam rearrangement unit ₂For:

${\mathrm{\&Delta;}}_2=\frac{\mathrm{len}}{N\&CenterDot;f({\mathrm{\&beta;}}_2,n_2)}$

Wherein, β ₂Or π-β ₂Be the edge surface of the clearance band in each layer on the said light beam rearrangement unit the surperficial angulation that comprises length dimension and thickness dimension, n with respect to this light beam rearrangement unit ₂Be the refractive index of the transparent optical material that forms said light beam rearrangement unit, f (β ₂, n ₂) be that (β is n) at β=β for following function f ₂, n=n ₂The time value, and

$f(\mathrm{\&beta;},n)=\left|\frac{\cos (\mathrm{\&beta;}+\arcsin \frac{n\&CenterDot;\cos \mathrm{\&beta;}}{n_0})}{\cos \left(\arcsin \frac{n\&CenterDot;\cos \mathrm{\&beta;}}{n_0}\right)}\right|.$

5. the beam shaping system of one dimension semiconductor laser array according to claim 4, wherein, through W=| μ (n ₁) L ₁Δ α ₁| confirm Δ α ₁

6. the beam shaping system of one dimension semiconductor laser array according to claim 1; Wherein, In said light beam rearrangement unit; Along in tactic said N of the said thickness direction layer, the opposite in sign of the value of the vertical directed distance between the edge surface of the clearance band in the value of the vertical directed distance between the edge surface of the clearance band in the 1st layer and the N layer, absolute value is equal; Wherein when N is odd number, along tactic (N+1)/2 of said thickness direction layer for not comprising the continuous transparent optical material layer of said clearance band.

7. the beam shaping system of a two-dimentional solid matter semiconductor laser array; Comprise two-dimentional solid matter semiconductor laser array, fast and slow axis beam collimation unit, fast axial light bundle compression unit, light beam cutter unit, light beam rearrangement unit and slow axis beam-expanding collimation unit that optics coupling is sequentially got up; Wherein, Said light beam cutter unit is the light beam cutter unit in the described beam shaping of the arbitrary claim system in the claim 1 to 6; Said light beam rearrangement unit is the light beam rearrangement unit in the described beam shaping of the arbitrary claim system in the claim 1 to 6; Said light beam cutter unit is identical with the number N of the said transparent optical material layer that said light beam rearrangement unit is comprised, and the stacked direction of the said transparent optical material layer in said light beam cutter unit and the said light beam rearrangement unit is vertical each other.

8. the beam shaping system of the non-solid matter semiconductor laser array of two dimension; Comprise two-dimentional non-solid matter semiconductor laser array, fast and slow axis beam collimation unit, light beam cutter unit, light beam rearrangement unit and slow axis beam-expanding collimation unit; Wherein, Said light beam cutter unit is the light beam cutter unit in the described beam shaping of the arbitrary claim system in the claim 1 to 6; Said light beam rearrangement unit comprise a plurality of along thickness direction arrange like the light beam rearrangement unit in the described beam shaping of the arbitrary claim system in the claim 1 to 6; Said light beam cutter unit is identical with the number N of the said transparent optical material layer that said light beam rearrangement unit is comprised, and the stacked direction of the said transparent optical material layer in said light beam cutter unit and the said light beam rearrangement unit is vertical each other.

9. according to the described beam shaping of the arbitrary claim system in the claim 1,7 and 8; Wherein, Said light beam cutter unit is with the structure optical element replacement identical with the structure of said light beam rearrangement unit, and said light beam rearrangement unit is with the structure optical element replacement identical with the structure of said light beam cutter unit.

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