CN202256887U - Optical element and optical system for array beam shaping of semiconductor laser - Google Patents

Abstract

The utility model provides an integrally formed optical element for array beam shaping of a semiconductor laser and a system consisting of the optical element for array beam shaping of one-dimensional and two-dimensional close-packed and two-dimensional non-close-packed semiconductor lasers. The optical element is made of cuboid transparent optical materials, the cuboid is uniformly divided into N layers in the thickness direction, N is a natural number and is greater than or equal to 2, each layer comprises an air gap band, inclined angles of the air gap bands of all layers are mutually identical or complementary, and bandwidth values of the air gap bands of all layers in sequential arrangement in the thickness direction form degressive arithmetic progressions, wherein the bandwidth value of the air gap band in the first layer is set into the positive number, when symbols of the bandwidth values of the air gap bands in two layers are identical, the inclined angles of the air gap bands in the two layers are identical, when the symbols are opposite, the inclined angles of the air gap bands in the two layers are complementary, and when the bandwidth value is zero, the result shows that the layer does not have the air gap band.

Description

The optical element and the optical system that are used for the semiconductor laser array beam shaping

Technical field

The utility model relates to a kind of optical element and optical system, specifically, relates to a kind of optical element and optical system that is used for the semiconductor laser array beam shaping.

Background technology

Semiconductor laser is because of electro-optical efficiency is high, volume is little and in light weight having obtained used widely.Therefore but single semiconductor laser can't be exported high power (greater than hectowatt), has occurred a plurality of semiconductor lasers are arranged in forming the bar battle array together and with the be stacked laser array of formation face battle array of a plurality of battle arrays.Receive restrictions such as technology, cooling, shaping methods, semiconductor laser array can not be done very longly, generally is about 10mm at present.The semiconductor laser that constitutes semiconductor laser array is generally edge-emission N-type semiconductor N laser instrument, and this semiconductor laser comprises a p-n junction, and current vertical is injected in this p-n junction, and laser then emits from the lateral edge of this p-n junction.Fig. 1 shows the synoptic diagram of existing one dimension semiconductor laser array.In an example of one dimension semiconductor laser array 1 shown in Figure 1, array length is about 10mm, and the bright dipping side of single luminous zone is of a size of 150 μ m * 1 μ m, and the spacing of adjacent luminous zone is 500 μ m.Because the section of the luminous zone of edge-emission N-type semiconductor N laser instrument is narrow; Thereby the light beam of its output (is called slow-axis direction in the direction that is parallel to p-n junction; Also be the directions X among Fig. 1) and the direction (being called quick shaft direction, also is the Y direction among Fig. 1) perpendicular to p-n junction on the different angles of divergence is arranged, be 50 ° to 60 ° in the angle of divergence of quick shaft direction; The angle of divergence at slow-axis direction is 5 ° to 10 °; And the light beam of its output is also different with diameter with the position with a tight waist on the slow-axis direction at quick shaft direction, have serious astigmatism, thereby the scioptics system focuses on simply.

The quality of laser beam quality is estimated through beam parameter product (BPP), and beam parameter product BPP is defined as the product of waist radius (R) and far-field divergence angle half-angle (θ) on certain direction, and unit is mmmrad.The beam parameter product BPP of the fast axle of above-mentioned semiconductor laser _fBe generally 1～2mmmrad, the beam parameter product BPP of slow axis _sBe 500mmmrad, the beam parameter product of fast and slow axis differs hundreds of times, thereby is difficult to this light beam is focused on.

For the quality of the output beam that improves semiconductor laser array, must carry out shaping to it, to obtain the angle of divergence and all very little symmetrical hot spot of spot diameter.Beam shaping is exactly the beam parameter product homogenising with the fast and slow axis of light beam; Promptly the bar shaped collimated light beam is divided into the N section on slow-axis direction through optical element; Then this N section is superposeed on quick shaft direction, like this, the beam parameter product on the slow-axis direction just is reduced to original 1/N; Beam parameter product on the fast axle then is increased to original N doubly, thereby the beam parameter product of the fast and slow axis of light beam is by homogenising.Fig. 2 is the synoptic diagram that the light beam of one dimension semiconductor laser array is carried out shaping; Wherein, Top in Fig. 2 shows shaping optical system, and the bottom in Fig. 2 schematically shows the section configuration of the light beam at some the node places in the said shaping optical system.As shown in Figure 2, at first, the laser beam that one dimension semiconductor laser array 1 sends collimates respectively to obtain quasi-parallel light through fast and slow axis collimation lens 2.The section configuration of light beam behind the collimation at Node B 1 place is strip, and the length of this strip is Len, and width is W.Then; Light beam behind the collimation passes through light beam cutter unit 4 along the Z axle; Become the N section light beam (for example light beam section a, b, c, d, e, the f among Fig. 2) of step-like distribution at Node B 2 places through the light beam behind the light beam cutter unit 4; The N section light beam of step-like distribution through light beam rearrangement unit 5, becomes the stack of said N section light beam again at Node B 3 places through the light beam behind the light beam rearrangement unit 5.The light beam at Node B 3 places is little in the size of slow-axis direction (being the directions X among Fig. 2), through 7 backs, slow axis beam-expanding collimation unit become at Node B 4 places the fast and slow axis beam parameter product by homogenising rectangular light spot.Final beam can be focused into uniform some hot spot through spherical surface focusing lens 8.

At present, the light beam cutter unit 4 that is used for the semiconductor laser array beam shaping generally is divided into reflection type optical element, refraction-reflection optical element and refraction type optical element with light beam rearrangement unit 5 optical elements such as grade.

Said reflective shaping comprises two notch cuttype catoptrons of symmetry fully with optical element; Each notch cuttype catoptron comprises N high reflectance minute surface again; Light beam is divided into N cross-talk light beam after through first notch cuttype catoptron on slow-axis direction; After the reflection of each cross-talk light beam through the corresponding minute surface in second notch cuttype catoptron, align is got up on quick shaft direction.The shortcoming of the optical element that this shaping is used is that the difficulty of processing of notch cuttype catoptron is big.

Said refraction-reflection shaping utilizes refraction and the total reflection of two groups of prisms to realize cutting apart of light beam with optical element and resets.The shortcoming of the optical element that this shaping is used is the bad control in accurate location between prism, and the assembling of prism is difficulty relatively.

Said refraction type shaping then reflects the homogenize that realizes light beam through light beam is carried out one or many with optical element.This type of shaping can be processed through grin lens array, microtrabeculae lens arra, prism combination, optical glass plate heap or the beam splitting refractor of banking up with optical element.This type of shaping closely is formed by stacking a plurality of optical glass thin slices with optical element, and the efficiency ratio of shaping is higher.But its defective is, along with the increase of the quantity of optical glass thin slice, the cumulative errors of optical glass thin slice is increasing, to such an extent as to exceed rational error range, makes the shaping effect variation.In addition, also there are assembling difficulty, difficult problem of regulating.

The utility model content

The purpose of the utility model be to provide a kind of optical element that is used for the semiconductor laser array beam shaping and optical system with overcome above-mentioned location out of true, assembling difficulty, cumulative errors big, be difficult for the shortcoming of regulating.

To achieve these goals; The utility model provides a kind of optical element that is used for the semiconductor laser array beam shaping; This optical element is processed by the rectangular parallelepiped transparent optical material; This rectangular parallelepiped transparent optical material is divided into the N layer equably along thickness direction; N is a natural number; N >=2 comprise and clearance band this layer uniform thickness, that between two surfaces that comprise length dimension and thickness dimension of said rectangular parallelepiped, extend in each said layer, and two edge surfaces of this clearance band are two planes that are parallel to said thickness direction and are parallel to each other; The edge surface of the said clearance band in any two said layers is identical or complementary with respect to the surperficial angulation that comprises length dimension and thickness dimension of said rectangular parallelepiped; Value along vertical directed distance between two edge surfaces of the said clearance band in tactic each the said layer of said thickness direction constitutes the arithmetic progression that successively decreases, wherein, between two edge surfaces of the said clearance band in first layer the value of vertical directed distance be made as on the occasion of; The symbol of the value of two vertical directed distances if this successively decreases in the arithmetic progression is identical, and then expression is identical with respect to the surperficial angulation that comprises length and thickness dimension of said rectangular parallelepiped with the edge surface of said clearance band in corresponding two layers of the value of these two vertical directed distances; The opposite in sign of the value of two vertical directed distances if this successively decreases in the arithmetic progression, then the edge surface of the said clearance band in expression and corresponding two layers of the value of these two vertical directed distances is with respect to the surperficial angulation complementation that comprises length dimension and thickness dimension of said rectangular parallelepiped; The value of a vertical directed distance if this successively decreases in the arithmetic progression is zero, and then the corresponding layer of the vertical directed distance with this of expression is not for comprising the continuous transparent optical material layer of clearance band.

Preferably; Along in tactic said N layer of said thickness direction; The value of the vertical directed distance between the edge surface of the clearance band in the value of the vertical directed distance between the edge surface of the clearance band in the 1st layer and the said N layer can be that absolute value equates; Opposite in sign, wherein when N is odd number, along tactic (N+1)/2 of said thickness direction layer for not comprising the continuous transparent optical material layer of said clearance band.Further preferably; When N is even number; The center line along bearing of trend of said the 1st layer of clearance band in the N/2 layer can be in the plane of the same edge surface that is parallel to the 1st layer of clearance band in the N/2 layer; The center line along bearing of trend of (the N/2)+1 layer clearance band in the N layer can be in the plane of the same edge surface that is parallel to (the N/2)+1 layer clearance band in the N layer; When N is odd number; The center line along bearing of trend of the 1st layer of clearance band in (N-1)/2 layer can be in the plane of the same edge surface that is parallel to the 1st layer of clearance band in (N-1)/2 layer; The center line along bearing of trend of (the N+3)/2 layer clearance band in the N layer can be in the plane of the same edge surface that is parallel to (the N+3)/2 layer clearance band in the N layer, and (N+1)/2 are not layer for comprising the continuous transparent optical material layer of said clearance band.

On the other hand; The utility model provides a kind of optical system that is used for one dimension semiconductor laser array beam shaping; It comprises one dimension semiconductor laser array, fast and slow axis beam collimation unit, light beam cutter unit, light beam rearrangement unit and slow axis beam-expanding collimation unit that optical coupled is sequentially got up; Wherein, Said light beam cutter unit can be used for the optical element of semiconductor laser array beam shaping for above-mentioned any, and said light beam rearrangement unit also can be used for the optical element of semiconductor laser array beam shaping for above-mentioned any; Said light beam cutter unit is identical with the number of the said layer that said light beam rearrangement dividing elements goes out; One in two surfaces that comprise width dimensions and thickness dimension of said light beam cutter unit is the incident end face of light beam, and another is the outgoing end face of light beam; One in two surfaces that comprise width dimensions and thickness dimension of said light beam rearrangement unit is the incident end face of light beam, and another is the outgoing end face of light beam; And the light beam incident end face of said light beam cutter unit is parallel to the light beam incident end face of said light beam rearrangement unit, and the thickness dimension direction of said light beam cutter unit is vertical each other with the thickness dimension direction of said light beam rearrangement unit.

In addition; The utility model also provides a kind of optical system that is used for two-dimentional solid matter semiconductor laser array beam shaping; It comprises two-dimentional solid matter semiconductor laser array, fast and slow axis beam collimation unit, fast axial light bundle compression unit, light beam cutter unit, light beam rearrangement unit and slow axis beam-expanding collimation unit that optical coupled is sequentially got up; Wherein, Said light beam cutter unit can be used for the optical element of semiconductor laser array beam shaping for above-mentioned any, and said light beam rearrangement unit also can be used for the optical element of semiconductor laser array beam shaping for above-mentioned any; Said light beam cutter unit is identical with the number of the said layer that said light beam rearrangement dividing elements goes out; One in two surfaces that comprise width dimensions and thickness dimension of said light beam cutter unit is the incident end face of light beam, and another is the outgoing end face of light beam; One in two surfaces that comprise width dimensions and thickness dimension of said light beam rearrangement unit is the incident end face of light beam, and another is the outgoing end face of light beam; And the light beam incident end face of said light beam cutter unit is parallel to the light beam incident end face of said light beam rearrangement unit, and the thickness dimension direction of said light beam cutter unit is vertical each other with the thickness dimension direction of said light beam rearrangement unit.

Preferably, can get

BPP _sBe the beam parameter product of the slow-axis direction of said semiconductor laser array, BPP _fBe the beam parameter product of the quick shaft direction of said semiconductor laser array, [] is for rounding symbol; The thickness d of said light beam cutter unit ₁Can be for inciding the length L en of the strip light spots on its light beam incident end face; The thickness d of said light beam rearrangement unit ₂Can for:

d ₂＝k(α ₁，n ₁)·Δ ₁·(N-1)+W

Wherein, k (α ₁, n ₁) be following function

$k(\mathrm{\α},n)=\left|\frac{\cos (\mathrm{\α}+\arcsin \frac{n\·\cos \mathrm{\α}}{n_0})}{\cos \left(\arcsin \frac{n\·\cos \mathrm{\α}}{n_0}\right)}\right|$

At α=α ₁, n=n ₁The time value, said α ₁Or π-α ₁Be the edge surface of the clearance band in each layer on the said light beam cutter unit the surperficial angulation that comprises length dimension and thickness dimension, n with respect to this light beam cutter unit ₁Be the refractive index of the transparent optical material that forms said light beam cutter unit, n ₀Be the refractive index of air, Δ ₁Be the absolute value of the difference of vertical directed distance between two edge surfaces of the clearance band in the adjacent two layers on the said light beam cutter unit, W is the width of said strip light spots; The absolute value delta of the difference of vertical directed distance between two edge surfaces of the clearance band in the adjacent two layers on the said light beam rearrangement unit ₂Can for:

${\mathrm{\Δ}}_2=\frac{\mathrm{Len}}{N\·k({\mathrm{\α}}_2,n_2)}$

Wherein, k (α ₂, n ₂) be that (α, n) function is at α=α for above-mentioned k ₂, n=n ₂The time value, said α ₂Or π-α ₂Be the edge surface of the clearance band in each layer on the said light beam rearrangement unit the surperficial angulation that comprises length dimension and thickness dimension, n with respect to this light beam rearrangement unit ₂Refractive index for the transparent optical material that forms said light beam rearrangement unit.Further preferably, can pass through W=k (α ₁, n ₁) Δ ₁Confirm Δ ₁

In addition; The utility model also provides a kind of optical system that is used for two-dimentional non-solid matter semiconductor laser array beam shaping; It comprises two-dimentional non-solid matter semiconductor laser array, fast and slow axis beam collimation unit, light beam cutter unit, light beam rearrangement unit and slow axis beam-expanding collimation unit that optical coupled is sequentially got up; Wherein, Said light beam cutter unit can be used for the optical element of semiconductor laser array beam shaping for above-mentioned any, and said light beam rearrangement unit can comprise that a plurality of above-mentioned any of arranging along thickness direction are used for the optical element of semiconductor laser array beam shaping; Each optical element in a plurality of said optical element that said light beam rearrangement unit is comprised is identical with the number of the said layer that said light beam cutter unit marks off; One in two surfaces that comprise width dimensions and thickness dimension of said light beam cutter unit is the incident end face of light beam, and another is the outgoing end face of light beam; One in two surfaces that comprise width dimensions and thickness dimension of each optical element in the said light beam rearrangement unit is the incident end face of light beam, and another is the outgoing end face of light beam; And the light beam incident end face of said light beam cutter unit is parallel to the light beam incident end face of said light beam rearrangement unit, and the thickness dimension direction of said light beam cutter unit is vertical each other with the thickness dimension direction of said light beam rearrangement unit.As stated; The described optical element of semiconductor laser array beam shaping and the shaping purpose that optical system can realize the semiconductor laser array light beam of being used for of the utility model; And said optical element have the location accurately, compact conformation, integrated molding, no cumulative errors, the advantage of regulating easily; Above-mentioned optical element and Design for optical system, manufacturing and use have been made things convenient for widely; And can reduce the loss of luminous power, and improve shaping efficient, be particularly suitable for the beam shaping of large power semiconductor laser array.

Description of drawings

Fig. 1 is a perspective diagram, shows existing one dimension semiconductor laser array;

Fig. 2 is a schematic diagram, shows the principle of the beam shaping of one dimension semiconductor laser array, and wherein, this figure top shows shaping optical system, and this figure bottom shows the section configuration of the light beam at some the node places in this shaping optical system;

Fig. 3 is a skeleton view, shows that the embodiment of the utility model is described to be used for the optical element that the semiconductor laser array light beam is cut apart;

Fig. 4 is a planimetric map, shows twice refraction along the light in tactic the 1st layer of the thickness direction of optical element among Fig. 3;

Fig. 5 is a planimetric map, shows twice refraction along the light in tactic the 6th layer of the thickness direction of optical element among Fig. 3;

Fig. 6 is a skeleton view, shows that another embodiment of the utility model is described to be used for the optical element that the semiconductor laser array light beam is cut apart;

Fig. 7 is a skeleton view, shows the described optical element that is used for the semiconductor laser array light beam rearrangement of an embodiment of the utility model;

Fig. 8 is a skeleton view, shows the described optical element that is used for the semiconductor laser array light beam rearrangement of another embodiment of the utility model;

Fig. 9 is the light path synoptic diagram, shows the described optical system that is used for one dimension semiconductor laser array beam shaping of first embodiment of the utility model;

Figure 10 is the light path synoptic diagram, shows the described optical system that is used for two-dimentional solid matter semiconductor laser array beam shaping of second embodiment of the utility model; And

Figure 11 is the light path synoptic diagram, shows the described optical system that is used for two-dimentional non-solid matter semiconductor laser array beam shaping of the 3rd embodiment of the utility model.

Embodiment

Below with reference to accompanying drawing the described optical element of semiconductor laser array beam shaping and the embodiment of optical system of being used for of the utility model described.Those of ordinary skill in the art can recognize, under the situation of spirit that does not depart from the utility model and scope, can revise described embodiment with various mode or its combination.Therefore, accompanying drawing is illustrative with being described in essence, rather than is used to limit the protection domain of claim.In addition, in this manual, accompanying drawing is not in scale to be drawn, and identical Reference numeral is represented identical part.

Fig. 3 is a skeleton view, shows the optical element that the described light beam that is used for semiconductor laser array of an embodiment of the utility model is cut apart.As shown in Figure 3; The described optical element 40 that is used for the semiconductor laser array beam shaping of an embodiment of the utility model is processed by rectangular parallelepiped transparent optical material (for example clear optical glass, transparent resin etc.), and the refractive index of wherein said transparent optical material is n ₁, the refractive index of air is n ₀Here; Two surfaces that comprise length dimension and thickness dimension of this rectangular parallelepiped are called upper bottom surface 41 and bottom surface 42 respectively; Two surfaces that comprise length dimension and width dimensions of this rectangular parallelepiped are called leading flank 43 and trailing flank 44 respectively, two surfaces that comprise width dimensions and thickness dimension of this rectangular parallelepiped are called left surface 45 and right flank 46 respectively.Optical element 40 is divided into the N layer equably along thickness direction, and N is the even number more than or equal to 2, is without loss of generality, and for convenient expression, gets N=6 among Fig. 3.All comprise clearance band one and this layer uniform thickness, that between the upper bottom surface 41 of said rectangular parallelepiped and bottom surface 42, extend in each layer, two edge surfaces of this clearance band are the thickness direction (promptly perpendicular to leading flank 43 and trailing flank 44) that is parallel to said rectangular parallelepiped and two planes that are parallel to each other.The length direction that 6 solid dot S1-S6 on the left surface 45 show six said rectangular parallelepipeds in light edge incides formed six hot spots on the left surface 45; Pairing six light of these six hot spots are incident in respectively in evenly be divided into 6 layers of optical element 40, and in the layer at place separately, propagate respectively, refraction.Six hot spots on 6 hollow dots S1 ' on the right flank 46-S6 ' expression left surface 46 respectively pairing light if should be during along straight ahead in the outgoing position on the right flank 46,6 solid dot S1 on the right flank 46 "-S6 " then show on the left surface 45 6 hot spots respectively pairing light through twice refraction of the clearance band in the place layer separately after the outgoing position of reality on right flank 46.

Fig. 4 and Fig. 5 are planimetric maps, show twice refraction along the light in tactic the 1st layer and the 6th layer of the thickness direction of optical element 40 among Fig. 3 respectively.

As shown in Figure 4; Said the 1st layer comprises and clearance band G11 this layer uniform thickness, that between the upper bottom surface 41 of said rectangular parallelepiped and bottom surface 42, extend, and two edge surface G11a of this clearance band G11 are the thickness direction (promptly perpendicular to leading flank 43 and trailing flank 44) that is parallel to said rectangular parallelepiped and two planes that are parallel to each other with G11b.Angulation (promptly with respect to the upper bottom surface 41 (or bottom surface 42) of said rectangular parallelepiped for the edge surface G11a of clearance band G11 or G11b; From plane, upper bottom surface 41 (or bottom surface 42) place; By counterclockwise turning to the angle of being rotated when edge surface G11a (or edge surface G11b) belongs to the plane, may also be referred to as the inclination angle of clearance band G11) be α ₁Two the edge surface G11a of clearance band G11 and the vertical directed distance between the G11b (promptly point to the bee-line near the edge surface G11b of light exit side 46 from the edge surface G11a near light incident side 45, may also be referred to as is the bandwidth of clearance band G11) are L11.The light that incides the some S1 on this layer left surface 45 along the length direction of said rectangular parallelepiped in this layer through the some S1 of twice refraction from this layer right flank 46 " outgoing.

As shown in Figure 5; Said the 6th layer comprises and clearance band G16 this layer uniform thickness, that between the upper bottom surface 41 of said rectangular parallelepiped and bottom surface 42, extend, and two edge surface G16a of this clearance band G16 are the thickness direction (promptly perpendicular to leading flank 43 and trailing flank 44) that is parallel to said rectangular parallelepiped and two planes that are parallel to each other with G16b.The edge surface G16a of clearance band G16 or G16b are π-α with respect to the upper bottom surface 41 or bottom surface 42 angulations (may also be referred to as the inclination angle of clearance band G16) of said rectangular parallelepiped ₁Two the edge surface G16a of clearance band G16 and the vertical directed distance between the G16b (promptly point to the bee-line near the edge surface G16b of light exit side 46 from the edge surface G16a near light incident side 45, may also be referred to as is the bandwidth of clearance band G16) are L16.The light that incides the some S6 on this layer left surface 45 along the length direction of said rectangular parallelepiped in this layer through the some S6 of twice refraction from this layer right flank 46 " outgoing.

According to the refraction law of light, be easy to calculate, in Fig. 4 and Fig. 5, after twice refraction, outgoing beam is with respect to the side-play amount D of incident beam _1i=k (α ₁, n ₁) L _1i, wherein, i=1,6, and k (α ₁, n ₁) be function

$k(\mathrm{\α},n)=\left|\frac{\cos (\mathrm{\α}+\arcsin \frac{n\·\cos \mathrm{\α}}{n_0})}{\cos \left(\arcsin \frac{n\·\cos \mathrm{\α}}{n_0}\right)}\right|---\left(1\right)$

At α=α ₁, n=n ₁The time value.See k (α from following formula ₁, n ₁)＞0, and k (α is arranged ₁, n ₁)=k (π-α ₁, n ₁).

For the situation among Fig. 4; If the value L11 that stipulates vertical directed distance between two edge surface G11a and the G11b of its clearance band G11 on the occasion of; Then in the situation of Fig. 5, the value L16 of vertical directed distance is a negative value between two the edge surface G16a of its clearance band G16 and the G16b.Similarly; For the situation among Fig. 4; If stipulate that the value L11 of vertical directed distance between two edge surface G11a and the G11b of its clearance band G11 is a negative value; Then in the situation of Fig. 5, between two the edge surface G16a of its clearance band G16 and the G16b value L16 of vertical directed distance be on the occasion of.Adopt this thinking, can be with two vergence directions of the symbolic representation clearance band of the algebraic value of the said vertical directed distance of clearance band, these two vergence directions are with respect to supplementary angle each other, the inclination angle of the upper bottom surface 41 of said rectangular parallelepiped or bottom surface 42.Simultaneously, can use two offset directions of outgoing beam with respect to the symbolic representation light beam of the algebraic value of the side-play amount of incident beam.Should be noted that a kind of regulation of selecting in the afore mentioned rules is for convenience, does not influence the spirit and the scope of the utility model.

Referring again to Fig. 3; Identical or complementary along the clearance band G11 in the tactic the 1st to the 6th layer of the thickness direction of said rectangular parallelepiped to G16 with respect to the inclination angle of the upper bottom surface 41 of this rectangular parallelepiped or bottom surface 42; Specifically; Said inclination angle in the 1st layer to the 3rd layer all equates, the said inclination angle in the 4th to the 6th layer all equates, and the said inclination angle in the 1st to the 3rd layer with the 4th to the 6th layer in the complementation of said inclination angle.

In addition, in Fig. 3, the value L11 along the clearance band G11 in the tactic the 1st to the 6th layer of the thickness direction of said rectangular parallelepiped to the bandwidth of G16 is to the L16 formation arithmetic progression that successively decreases, and the value of wherein stipulating L11 is on the occasion of, i.e. L _1j=L ₁₁-(j-1) Δ ₁, j=1,2,3,4,5,6, Δ ₁Absolute value for the difference of the bandwidth of the clearance band in the adjacent two layers.Select suitable L11 and Δ ₁Value, can make L11=-L16, L12=-L15, L13=-L14.In addition; Clearance band G11-G13's can be in the plane of the same edge surface that is parallel to these gap bands along the center line of bearing of trend, and clearance band G14-G16's can be in the plane of the same edge surface that is parallel to these gap bands along the center line of bearing of trend.

Fig. 6 is a skeleton view, shows the optical element that the described light beam that is used for semiconductor laser array of another embodiment of the utility model is cut apart.The optical element 40 ' among Fig. 6 and the difference of the optical element 40 among Fig. 3 are that the optical element 40 ' among Fig. 6 has been divided into the N layer equably along thickness direction, and N is the odd number more than or equal to 2, is without loss of generality, and for convenient expression, gets N=7 among Fig. 6.Wherein, (N+1)/2 layer are not comprise the clearance band in the 4th layer among Fig. 6.Promptly; The 4th layer is the transparent optical material layer that extends continuously, perhaps also can be: comprise the clearance band in the 4th layer, but the inclination angle of this clearance band is 90 ° of (not shown)s; For a kind of equivalent situation in back, when in design and manufacturing, convenience being arranged, can adopt.In other words, in Fig. 6, the bandwidth of the clearance band in the 1st to the 7th layer has L11=-L17, L12=-L16, and L13=-L15, therefore L14=0, is radiated at the 4th layer and the light beam in this layer, propagated and does not reflect.

Should note; Can easily see through top description referring to figs. 3 to Fig. 6; At first, the clearance band in said each layer can not influence the side-play amount of outgoing beam with respect to incident beam along the translation of the length direction of said rectangular parallelepiped, in other words; For said optical element 40, the inclination alpha of importantly said clearance band ₁With bandwidth L1j (j=1 to 6), rather than the position of clearance band in each layer.That is: the optical element that the light beam that is used for semiconductor laser array that the utility model embodiment provides is cut apart; Constitute the arithmetic progression that successively decreases along vertical directed distance (bandwidth) between two edge surfaces of the clearance band in the tactic N of the thickness direction of rectangular parallelepiped the layer; In this arithmetic progression, the inclination angle of the pairing air-gap of vertical directed distance value that any two symbols are identical equates, M (M=1; 2; ..., N) absolute value of the bandwidth of the air-gap in layer and the N-M+1 layer equates, and the edge surface of the clearance band in M layer and the N-M+1 layer is complementary with respect to the surperficial angulation that comprises length dimension and thickness dimension of this rectangular parallelepiped.Secondly,, can set the bandwidth value in certain one deck (such as the 1st layer) arbitrarily for the bandwidth of clearance band, bandwidth be on the occasion of the time pairing inclination angle can be α ₁Or π-α ₁The absolute value delta of the difference of the bandwidth of the clearance band in the adjacent layer importantly ₁The absolute value delta of the difference of this bandwidth ₁Determined light beam relative displacement between quilt each cross-talk light beam that is partitioned into after through optical element 40.Like this, just the integrated design for optical element 40 provides very big dirigibility with making, and needs the local less of departure during fabrication.In addition, when inciding light beam on the left surface 45 of optical element 40 along the length direction of optical element 40, correspondingly do equidirectional from the light beam of right flank 46 outgoing with the amplitude translation along the Width translation of optical element 40.

Referring to Fig. 3 and Fig. 6, when using optical element 40 or 40 ' that the collimated light beam of one dimension semiconductor laser array is cut apart, at first according to the beam parameter product BPP of the slow-axis direction of this semiconductor laser array _sBeam parameter product BPP with the quick shaft direction of this semiconductor laser array _fConfirm the number of plies of optical element 40 or 40 '

Wherein, [] is for rounding symbol.Then, according to the length L en of the strip light spots on the incident end face that incides optical element 40 or 40 ' 45, confirm the thickness d of optical element 40 or 40 ' ₁=Len.The absolute value delta of difference of bandwidth that is used for the clearance band of the adjacent layer on the optical element 40 or 40 ' of light beam cutting ₁Can confirm according to the thickness W of said strip light spots.Specifically, if light beam is cut into appearance shown in Figure 2, then through W=k (α ₁, n ₁) Δ ₁Can select the absolute value delta of the difference of suitable bandwidth ₁Should be noted that Δ ₁Can also select through Else Rule, for example utilize W＜k (α ₁, n ₁) Δ ₁Or W＞k (α ₁, n ₁) Δ ₁Come selected.

After the collimated light beam of said one dimension semiconductor laser array is cut apart, utilize Fig. 7 or optical element shown in Figure 8 that light beam after cutting apart is reset again.Fig. 7 is a skeleton view; Show the described optical element that is used for the semiconductor laser array light beam rearrangement of an embodiment of the utility model; Fig. 8 is a skeleton view, shows the described optical element that is used for the semiconductor laser array light beam rearrangement of another embodiment of the utility model.Optical element 50 shown in Figure 7 is identical with the structure of optical element 40 shown in Figure 3, and optical element 50 ' shown in Figure 8 is identical with the structure of optical element 40 ' shown in Figure 6.When the light beam that uses optical element 50 or 50 ' that the quilt of one dimension semiconductor laser array has been cut apart is reset; Make the light-incident end of optical element 50 or 50 ' be parallel to the light-incident end of optical element 40 or 40 ', and the thickness direction that makes optical element 50 or 50 ' clockwise rotate 90 ° with respect to the thickness direction of optical element 40 or 40 '.Optical element 50 or 50 ' has been divided into the N layer equally,

[] for rounding symbol, optical element 50 or 50 ' thickness d ₂Can confirm by following formula:

d ₂＝k(α ₁，n ₁)·Δ ₁·(N-1)+W (2)

In the formula (2), Δ ₁Absolute value for the difference of vertical directed distance between two edge surfaces of the clearance band in the adjacent layer on optical element 40 or 40 '; K (α ₁, n ₁) be that (α is n) at α=α for function k ₁, n=n ₁The time value, α ₁Or π-α ₁Be the edge surface of the clearance band in each layer on optical element 40 or 40 ' the surperficial angulation that comprises length dimension and thickness dimension, n with respect to this light beam cutter unit ₁Be the refractive index of the transparent optical material that forms optical element 40 or 40 ', n ₀It is the refractive index of air.The absolute value delta of the difference of vertical directed distance between two edge surfaces of the clearance band in the adjacent layer on the optical element 50 or 50 ' ₂Can confirm by following formula:

${\mathrm{\Δ}}_2=\frac{\mathrm{Len}}{N\·k({\mathrm{\α}}_2,n_2)}---\left(3\right)$

In the formula (3), k (α ₂, n ₂) be that (α is n) at α=α for function k ₂, n=n ₂The time value, α ₂Or π-α ₂Be the edge surface of the clearance band in each layer on optical element 50 or 50 ' the surperficial angulation that comprises length dimension and thickness dimension, n with respect to this light beam rearrangement unit ₂Refractive index for the transparent optical material that forms optical element 50 or 50 '.

Below with reference to Fig. 9, Figure 10 and Figure 11 described three embodiment that are used for the optical system of semiconductor laser array beam shaping of the utility model are described.Fig. 9 is the light path synoptic diagram; Show the described optical system that is used for one dimension semiconductor laser array beam shaping of first embodiment of the utility model; Wherein, Fig. 9 top shows the side view of this system, and Fig. 9 middle part shows the vertical view of this system, and Fig. 9 bottom shows the section configuration of the light beam at Node B 1, B2, B3 and B4 place in this system.Figure 10 is the light path synoptic diagram; Show the described optical system that is used for two-dimentional solid matter semiconductor laser array beam shaping of second embodiment of the utility model; Wherein, Figure 10 top shows the side view of this system, and Figure 10 middle part shows the vertical view of this system, and Figure 10 bottom shows the section configuration of the light beam at Node B 1, B2, B3 and B4 place in this system.Figure 11 is the light path synoptic diagram; Show the described optical system that is used for two-dimentional non-solid matter semiconductor laser array beam shaping of the 3rd embodiment of the utility model; Wherein, Figure 10 top shows the side view of this system, and Figure 10 middle part shows the vertical view of this system, and Figure 10 bottom shows the section configuration of the light beam at Node B 1, B2, B3 and B4 place in this system.

As shown in Figure 9; The optical system of the described one dimension semiconductor laser array of first embodiment beam shaping of the utility model comprises the one dimension semiconductor laser array 1 that optical coupled is sequentially got up, fast and slow axis beam collimation unit 2, the light beam cutter unit 4 that is made up of optical element 40 (or 40 '), the light beam rearrangement unit 5 and the slow axis beam-expanding collimation unit 7 that are made up of optical element 50 (or 50 ').Light beam cutter unit 4 is identical with the number N of the said layer that light beam rearrangement unit 5 marks off.The left surface 45 of optical element 40 (or 40 ') and optical element 50 (or 50 ') is the incident end face of light beam, and right flank 46 is the outgoing end face of light beam.Optical element 40 (or 40 ') is parallel to each other the thickness direction quadrature of the thickness direction of optical element 40 (or 40 ') and optical element 50 (or 50 ') with the light beam incident end face of optical element 50 (or 50 ').The absolute value of the difference of vertical directed distance is selected according to the description of front between two edge surfaces of the clearance band in thickness, the number of plies and the adjacent layer of optical element 40 (or 40 ') and optical element 50 (or 50 ').

Shown in figure 10; The optical system of the described two-dimentional solid matter semiconductor laser array beam shaping of second embodiment of the utility model comprises the two-dimentional solid matter semiconductor laser array 1 ' that optical coupled is sequentially got up, fast and slow axis beam collimation unit 2, fast axial light bundle compression unit 3, the light beam cutter unit 4 that is made up of optical element 40 (or 40 '), the light beam rearrangement unit 5 and the slow axis beam-expanding collimation unit 7 that are made up of optical element 50 (or 50 ').Spacing between the adjacent two row laser instruments in the two dimension solid matter semiconductor laser array 1 ' is general international standard spacing 1.8mm.Light beam cutter unit 4 is identical with the number N of the said layer that light beam rearrangement unit 5 marks off.The left surface 45 of optical element 40 (or 40 ') and optical element 50 (or 50 ') is the incident end face of light beam, and right flank 46 is the outgoing end face of light beam.Optical element 40 (or 40 ') is parallel to each other the thickness direction quadrature of the thickness direction of optical element 40 (or 40 ') and optical element 50 (or 50 ') with the light beam incident end face of optical element 50 (or 50 ').The absolute value of the difference of vertical directed distance is selected according to the description of front between two edge surfaces of the clearance band in thickness, the number of plies and the adjacent layer of optical element 40 (or 40 ') and optical element 50 (or 50 ').

Shown in figure 11; The optical system of the non-solid matter semiconductor laser array of the described two dimension of the 3rd embodiment beam shaping of the utility model comprises the one dimension semiconductor laser array 1 that optical coupled is sequentially got up ", fast and slow axis beam collimation unit 2, the light beam cutter unit 4 that constitutes by optical element 40 (or 40 '), by a plurality of light beam rearrangement unit 5 and slow axis beam-expanding collimation unit 7 that constitute along the range upon range of optical element 50 (or 50 ') of thickness direction.The non-solid matter semiconductor laser array 1 of two dimension " in the spacing of adjacent two row between the laser instruments be 2mm-10mm.The number of plies of the optical element 40 (or 40 ') that light beam cutter unit 4 is comprised is identical with the number N of the said layer that each optical element 50 (or 50 ') that light beam rearrangement unit 5 is comprised marks off.The left surface 45 of optical element 40 (or 40 ') and optical element 50 (or 50 ') is the incident end face of light beam, and right flank 46 is the outgoing end face of light beam.Optical element 40 (or 40 ') is parallel to each other the thickness direction quadrature of the thickness direction of optical element 40 (or 40 ') and optical element 50 (or 50 ') with the light beam incident end face of optical element 50 (or 50 ').The absolute value of the difference of vertical directed distance is selected according to the description of front between two edge surfaces of the clearance band in thickness, the number of plies and the adjacent layer of optical element 40 (or 40 ') and optical element 50 (or 50 ').

The optical system of the semiconductor laser array beam shaping that Fig. 9 is extremely shown in Figure 11 also can comprise the spherical surface focusing lens 8 that are used for the uniform light spots of slow axis beam-expanding collimation unit 7 outputs is focused into a hot spot.

As stated; The described optical element of semiconductor laser array beam shaping and the shaping purpose that optical system can realize the semiconductor laser array light beam of being used for of the utility model; And said optical element have the location accurately, compact conformation, integrated molding, no cumulative errors, the advantage of regulating easily; Above-mentioned optical element and Design for optical system, manufacturing and use have been made things convenient for widely; And can reduce the loss of luminous power, and improve shaping efficient, be particularly suitable for the beam shaping of large power semiconductor laser array.

As above with the mode of example described optical element and the optical system that is used for the semiconductor laser array beam shaping of the utility model described with reference to accompanying drawing.But, it will be appreciated by those skilled in the art that for described optical element and the optical system that is used for the semiconductor laser array beam shaping of above-mentioned the utility model, can also on the basis that does not break away from the utility model content, make various improvement.Therefore, the protection domain of the utility model should be confirmed by the content of appending claims.

Claims (8)

1. optical element that is used for the semiconductor laser array beam shaping; It is characterized in that; This optical element is processed by the rectangular parallelepiped transparent optical material; This rectangular parallelepiped transparent optical material is divided into the N layer equably along thickness direction; N is a natural number, and N >=2 comprise and clearance band this layer uniform thickness, that between two surfaces that comprise length dimension and thickness dimension of said rectangular parallelepiped, extend in each said layer; Two edge surfaces of this clearance band are two planes that are parallel to said thickness direction and are parallel to each other, and the edge surface of the said clearance band in any two said layers is identical or complementary with respect to the surperficial angulation that comprises length dimension and thickness dimension of said rectangular parallelepiped; Value along vertical directed distance between two edge surfaces of the said clearance band in tactic each the said layer of said thickness direction constitutes the arithmetic progression that successively decreases; Wherein, Between two edge surfaces of the said clearance band in first layer the value of vertical directed distance be made as on the occasion of; The symbol of the value of two vertical directed distances if this successively decreases in the arithmetic progression is identical; Then expression is identical with respect to the surperficial angulation that comprises length and thickness dimension of said rectangular parallelepiped with the edge surface of said clearance band in corresponding two layers of the value of these two vertical directed distances; The opposite in sign of the value of two vertical directed distances if this successively decreases in the arithmetic progression; Then the edge surface of the said clearance band in expression and corresponding two layers of the value of these two vertical directed distances is with respect to the surperficial angulation complementation that comprises length dimension and thickness dimension of said rectangular parallelepiped; The value of a vertical directed distance if this successively decreases in the arithmetic progression is zero, and then the corresponding layer of the vertical directed distance with this of expression is not for comprising the continuous transparent optical material layer of clearance band.

2. the optical element that is used for the semiconductor laser array beam shaping according to claim 1; It is characterized in that; Along in tactic said N layer of said thickness direction; The absolute value of the value of the vertical directed distance between the edge surface of the clearance band in the value of the vertical directed distance between the edge surface of the clearance band in the 1st layer and the said N layer equates; Opposite in sign, wherein when N is odd number, along tactic (N+1)/2 of said thickness direction layer for not comprising the continuous transparent optical material layer of said clearance band.

3. the optical element that is used for the semiconductor laser array beam shaping according to claim 2; It is characterized in that; When N is even number; Said the 1st layer of clearance band in the N/2 layer along the centerline of bearing of trend in the plane of the same edge surface that is parallel to the 1st layer of clearance band in the N/2 layer; (the N/2)+1 layer clearance band in the N layer along the centerline of bearing of trend in the plane of the same edge surface that is parallel to (the N/2)+1 layer clearance band in the N layer; When N is odd number; The 1st layer of clearance band in (N-1)/2 layer along the centerline of bearing of trend in the plane of the same edge surface that is parallel to the 1st layer of clearance band in (N-1)/2 layer; (the N+3)/2 layer clearance band in the N layer along the centerline of bearing of trend in the plane of the same edge surface that is parallel to (the N+3)/2 layer clearance band in the N layer, (N+1)/2 are not layer for comprising the continuous transparent optical material layer of said clearance band.

4. optical system that is used for one dimension semiconductor laser array beam shaping; Comprise one dimension semiconductor laser array, fast and slow axis beam collimation unit, light beam cutter unit, light beam rearrangement unit and slow axis beam-expanding collimation unit that optical coupled is sequentially got up; It is characterized in that

Said light beam cutter unit is each described optical element in the claim 1 to 3, and said light beam rearrangement unit is each described optical element in the claim 1 to 3,

Said light beam cutter unit is identical with the number of the said layer that said light beam rearrangement dividing elements goes out,

One in two surfaces that comprise width dimensions and thickness dimension of said light beam cutter unit is the incident end face of light beam, and another is the outgoing end face of light beam; One in two surfaces that comprise width dimensions and thickness dimension of said light beam rearrangement unit is the incident end face of light beam, and another is the outgoing end face of light beam; And the light beam incident end face of said light beam cutter unit is parallel to the light beam incident end face of said light beam rearrangement unit, and the thickness dimension direction of said light beam cutter unit is vertical each other with the thickness dimension direction of said light beam rearrangement unit.

5. optical system that is used for two-dimentional solid matter semiconductor laser array beam shaping; Comprise two-dimentional solid matter semiconductor laser array, fast and slow axis beam collimation unit, fast axial light bundle compression unit, light beam cutter unit, light beam rearrangement unit and slow axis beam-expanding collimation unit that optical coupled is sequentially got up; It is characterized in that

Said light beam cutter unit is each described optical element in the claim 1 to 3, and said light beam rearrangement unit is each described optical element in the claim 1 to 3,

Said light beam cutter unit is identical with the number of the said layer that said light beam rearrangement dividing elements goes out,

One in two surfaces that comprise width dimensions and thickness dimension of said light beam cutter unit is the incident end face of light beam, and another is the outgoing end face of light beam; One in two surfaces that comprise width dimensions and thickness dimension of said light beam rearrangement unit is the incident end face of light beam, and another is the outgoing end face of light beam; And the light beam incident end face of said light beam cutter unit is parallel to the light beam incident end face of said light beam rearrangement unit, and the thickness dimension direction of said light beam cutter unit is vertical each other with the thickness dimension direction of said light beam rearrangement unit.

6. according to claim 4 or 5 described optical systems, it is characterized in that,

BPP _sBe the beam parameter product of the slow-axis direction of said semiconductor laser array, BPP _fBe the beam parameter product of the quick shaft direction of said semiconductor laser array, [] is for rounding symbol, the thickness d of said light beam cutter unit ₁For inciding the length L en of the strip light spots on its light beam incident end face, the thickness d of said light beam rearrangement unit ₂For:

d ₂＝k(α ₁，n ₁)·Δ ₁·(N-1)+W

Wherein, k (α ₁, n ₁) be following function

$k(\mathrm{\α},n)=\left|\frac{\cos (\mathrm{\α}+\arcsin \frac{n\·\cos \mathrm{\α}}{n_0})}{\cos \left(\arcsin \frac{n\·\cos \mathrm{\α}}{n_0}\right)}\right|$

At α=α ₁, n=n ₁The time value, said α ₁Or π-α ₁Be the edge surface of the clearance band in each layer on the said light beam cutter unit the surperficial angulation that comprises length dimension and thickness dimension, n with respect to this light beam cutter unit ₁Be the refractive index of the transparent optical material that forms said light beam cutter unit, n ₀It is the refractive index of air; Δ ₁Absolute value for the difference of vertical directed distance between two edge surfaces of the clearance band in the adjacent two layers on the said light beam cutter unit; W is the width of said strip light spots,

The absolute value delta of the difference of vertical directed distance between two edge surfaces of the clearance band in the adjacent two layers on the said light beam rearrangement unit ₂For:

${\mathrm{\Δ}}_2=\frac{\mathrm{Len}}{N\·k({\mathrm{\α}}_2,n_2)}$

Wherein, k (α ₂, n ₂) be that (α, n) function is at α=α for above-mentioned k ₂, n=n ₂The time value, said α ₂Or π-α ₂Be the edge surface of the clearance band in each layer on the said light beam rearrangement unit the surperficial angulation that comprises length dimension and thickness dimension, n with respect to this light beam rearrangement unit ₂Refractive index for the transparent optical material that forms said light beam rearrangement unit.

7. optical system according to claim 6 is characterized in that, through W=k (α ₁, n ₁) Δ ₁Confirm Δ ₁

8. optical system that is used for two-dimentional non-solid matter semiconductor laser array beam shaping; Comprise the two-dimentional non-solid matter semiconductor laser array that optical coupled is sequentially got up; Fast and slow axis beam collimation unit; The light beam cutter unit; Light beam rearrangement unit and slow axis beam-expanding collimation unit; It is characterized in that; Said light beam cutter unit is each described optical element in the claim 1 to 3; Said light beam rearrangement unit comprise a plurality of along thickness direction arrange like each described optical element in the claim 1 to 3

Each optical element in a plurality of said optical element that said light beam rearrangement unit is comprised is identical with the number of the said layer that said light beam cutter unit marks off,

One in two surfaces that comprise width dimensions and thickness dimension of said light beam cutter unit is the incident end face of light beam, and another is the outgoing end face of light beam; One in two surfaces that comprise width dimensions and thickness dimension of each optical element in the said light beam rearrangement unit is the incident end face of light beam, and another is the outgoing end face of light beam; And the light beam incident end face of said light beam cutter unit is parallel to the light beam incident end face of said light beam rearrangement unit, and the thickness dimension direction of said light beam cutter unit is vertical each other with the thickness dimension direction of said light beam rearrangement unit.

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