CN102313995B - Light beam shaping system of semiconductor laser arrays - Google Patents

Abstract

The invention provides a light beam shaping system of semiconductor laser arrays which are densely lined in one dimension and in two dimensions and are not densely lined in two dimensions. A light beam cutting device in the optical shaping system comprises a plurality of cuboid transparent optical material layers which are stacked and have equal thickness; angles between light beam incident end surfaces in all layers which are sequentially lined along a stacking direction and side surfaces which are in parallel with light beam incident directions are increasing or decreasing; and vertical distances between incident end surfaces and emission end surfaces in all the layers or the distances along the incident directions of light beams are same. A light beam rearrangement unit of the optical shaping system is made of a cuboid transparent optical material, and the cuboid is uniformly divided into a plurality of layers along a thickness direction; each layer contains an air gap band; the inclination angles of the air gap bands in all the layers are same or complementary; and the band width values of the air gap bands of the layers which are sequentially lined along the thickness direction form a decreasing arithmetic progression. The light beam cutting unit and the light beam rearrangement unit contain the same number of layers, and the stacking directions of the layers are vertical.

Description

The beam shaping system of semiconductor laser array

Technical field

The present invention relates to a kind of optical system, specifically, relate to a kind of beam shaping system of semiconductor laser array.

Background technology

Semiconductor laser is because electro-optical efficiency is high, volume is little and lightweight being widely used.But single semiconductor laser can't be exported high power (being greater than hectowatt), therefore occurred by a plurality of semiconductor lasers formation bar arranged together battle array and by the laser array of a plurality of the stacking formation face battle arrays of battle array.Be subject to the restrictions such as technique, cooling, shaping methods, semiconductor laser array can not be done very longly, generally is about at present 10mm.The semiconductor laser that forms semiconductor laser array is generally edge-emission type semiconductor laser, and this semiconductor laser comprises a p-n junction, and electric current injects perpendicular to this p-n junction, and laser emits from the lateral edge of this p-n junction.Fig. 1 shows the schematic diagram of existing one dimension semiconductor laser array.In an example of the one dimension semiconductor laser array 1 shown in Fig. 1, array length is about 10mm, and the bright dipping side of single luminous zone is of a size of 150 μ m * 1 μ m, and the spacing of adjacent luminous zone is 500 μ m.Because the section of the luminous zone of edge-emission type semiconductor laser is narrow, thereby the light beam of its output (is called slow-axis direction in the direction that is parallel to p-n junction, be also the directions X in Fig. 1) and (be called quick shaft direction perpendicular to the direction of p-n junction, be also the Y-direction in Fig. 1) on the different angles of divergence is arranged, the angle of divergence at quick shaft direction is 50 ° to 60 °, the angle of divergence at slow-axis direction is 5 ° to 10 °, and with a tight waist position and the diameter of the light beam of its output on quick shaft direction and slow-axis direction is also different, there is serious astigmatism, thereby the scioptics system is focused on simply.

Laser beam quality is good and bad to be estimated by Beam parameter product (BPP), and Beam parameter product BPP is defined as waist radius (R) on certain direction and the product of far-field divergence angle half-angle (θ), and unit is mmmrad.The Beam parameter product BPP of fast axle _fbe generally 1～2mmmrad, the Beam parameter product BPP of slow axis _sfor 500mmmrad, the Beam parameter product of fast and slow axis differs hundreds of times, thereby is difficult to this light beam is focused on.

For the quality of the output beam that improves semiconductor laser array, must carry out shaping to it, to obtain all very little symmetrical hot spots of the angle of divergence and spot diameter.Beam shaping is exactly by the Beam parameter product homogenising of the fast and slow axis of light beam, by optical element, the bar shaped collimated light beam is divided into to the N section from slow-axis direction, then this N section is superposeed on quick shaft direction, like this, light beam parameters on slow-axis direction amasss and is reduced to original 1/N, be increased to original N doubly and the light beam parameters on fast axle is long-pending, thus the Beam parameter product homogenising of the fast and slow axis of light beam.Fig. 2 carries out the schematic diagram of shaping to the light beam of one dimension semiconductor laser array, wherein, top in Fig. 2 shows shaping optical system, and the bottom in Fig. 2 schematically shows the section configuration of the light beam of some Nodes in described shaping optical system.As shown in Figure 2, at first, the laser beam that one dimension semiconductor laser array 1 sends collimates respectively to obtain quasi-parallel light by fast and slow axis collimation lens 2.The section configuration of light beam after collimation at Node B 1 place is strip.Then, light beam after collimation is by light beam cutter unit 4, become the N section light beam of step-like distribution at Node B 2 places by the light beam after light beam cutter unit 4, the N section light beam of step-like distribution by light beam rearrangement unit 5, becomes the stack of described N section light beam again at Node B 3 places by the light beam behind light beam rearrangement unit 5.The light beam at Node B 3 places is little in the size of slow-axis direction (being the directions X in Fig. 2), the rectangular light spot that to become section at Node B 4 places behind slow axis beam-expanding collimation unit 7 be fast and slow axis Beam parameter product homogenising.Final beam can be focused into uniform some hot spot through spherical surface focusing lens 8.

At present, generally be divided into reflection type optical element, refraction-reflection optical element and refraction type optical element for optical elements such as the light beam cutter unit 4 of the beam shaping system of semiconductor laser array and light beam rearrangement unit 5.

Described reflective shaping comprises the notch cuttype catoptron of two full symmetrics with optical element, each notch cuttype catoptron comprises again N high reflectance minute surface, light beam is divided into N cross-talk light beam after by first notch cuttype catoptron on slow-axis direction, each cross-talk light beam, after the reflection of the corresponding minute surface in second notch cuttype catoptron, aligns and lines up on quick shaft direction.The shortcoming of the optical element that this shaping is used is that the difficulty of processing of notch cuttype catoptron is large.

Described refraction-reflection shaping utilizes the refraction of two groups of prisms and total reflection realize cutting apart of light beam and reset with optical element.The shortcoming of the optical element that this shaping is used is the bad control in accurate location between prism, and the assembling of prism is more difficult.

Described refraction type shaping with optical element by light beam is carried out to the homogenize that one or many reflects to realize light beam.This type of shaping can be made by grin lens array, microtrabeculae lens arra, prism combination, optical flat sheet pile or the beam splitting refractor of banking up with optical element.This type of shaping closely is formed by stacking by a plurality of optical glass thin slices with optical element, and the efficiency of shaping is higher.

Above-mentionedly in the beam shaping system, for the optical element of light beam cutting and light beam rearrangement, all manufacture and design more complicated, assembling difficulty, be difficult for adjusting and the problem such as cumulative errors is large existing in varying degrees.

Summary of the invention

The beam shaping system that the object of the present invention is to provide a kind of semiconductor laser array is to overcome the light beam cutter unit used in above-mentioned beam shaping system and the light beam rearrangement Unit Design is complicated, assembling difficulty, location out of true, cumulative errors are large, be difficult for the one or more shortcomings in the shortcomings such as adjusting.

To achieve these goals, on the one hand, the invention provides a kind of beam shaping system of one dimension semiconductor laser array, it comprises the one dimension semiconductor laser array that sequentially optics coupling is got up, fast and slow axis beam collimation unit, the light beam cutter unit, light beam rearrangement unit and slow axis beam-expanding collimation unit, wherein, described light beam cutter unit comprises the transparent optical material layer that a stacked N thickness is equal, N is natural number, N >=2, described each transparent optical material layer is flat cuboid, the side of the pair of parallel of this cuboid is respectively incident end face and the outgoing end face of described semiconductor laser array light beam, another of this cuboid be the incident direction in described semiconductor laser array light beam to parallel parallel sided, the parallelogram bottom surface of this cuboid and the bottom surface portions of adjacent transparent optical material layer stack, wherein, along the described light beam incident end face in tactic described each transparent optical material layer of described stacked direction with respect to the described side angulation increasing or decreasing that is parallel to described semiconductor laser array light beam incident direction, described incident end face in described each transparent optical material layer is identical with the vertical range between the outgoing end face or identical along the distance of described light beam incident direction, described light beam rearrangement unit is made by the rectangular parallelepiped transparent optical material, this rectangular parallelepiped transparent optical material also is divided into N stacked layer equably along thickness direction, in each described layer, comprise with this layer of uniform thickness, the clearance band extended between two surfaces that comprise length dimension and thickness dimension of described rectangular parallelepiped, two edge surfaces of this clearance band are two planes that are parallel to described thickness direction and are parallel to each other, the edge surface of the described clearance band in any two described layers is identical or complementary with respect to the surperficial angulation that comprises length dimension and thickness dimension of described rectangular parallelepiped, value along vertical directed distance between two edge surfaces of the described clearance band in tactic each the described layer of described thickness direction forms the arithmetic progression that successively decreases, wherein, between two edge surfaces of the described clearance band in first layer the value of vertical directed distance be made as on the occasion of, the symbol of the value of two vertical directed distances if this successively decreases in arithmetic progression is identical, the edge surface that means the described clearance band in two layers corresponding with the value of these two vertical directed distances is identical with respect to the surperficial angulation that comprises length and thickness dimension of described rectangular parallelepiped, the symbol of the value of two vertical directed distances if this successively decreases in arithmetic progression is contrary, mean the surperficial angulation complementation that comprise length dimension and thickness dimension of the edge surface of the described clearance band in two layers corresponding with the value of these two vertical directed distances with respect to described rectangular parallelepiped, the value of a vertical directed distance if this successively decreases in arithmetic progression is zero, mean that the layer corresponding with this vertical directed distance be not for comprising the continuous transparent optical material layer of clearance band, and described light beam cutter unit is mutually vertical with the stacked direction of described N transparent optical material layer in described light beam rearrangement unit.

Preferably, described light beam cutter unit and described light beam rearrangement unit can, by described N the integrated formation of transparent optical material layer, maybe can form by described N transparent optical material layer amalgamation.Further preferably, in described light beam cutter unit, along the described light beam incident end face in tactic described each transparent optical material layer of described stacked direction, with respect to the described side angulation of the incident direction that is parallel to described semiconductor laser array light beam, can form arithmetic progression.

In addition, preferably, can get

bPP _sfor the beam parameter product of the slow-axis direction of described semiconductor laser array, BPP _ffor the beam parameter product of the quick shaft direction of described semiconductor laser array, [] is for rounding symbol; Thickness d on the stacked direction of the described transparent optical material layer of described light beam cutter unit ₁can be the length L en of the strip light spots on the described light beam incident end face that incides described light beam cutter unit; Thickness d on the stacked direction of the described transparent optical material layer of described light beam rearrangement unit ₂can be d ₂=| μ (n ₁) L ₁Δ α ₁(N-1) |+W, wherein, L ₁for the light beam incident end face of each transparent optical material layer on described light beam cutter unit and the vertical range between light beam outgoing end face or along the distance of light beam incident direction, Δ α ₁poor for the light beam incident end face in the adjacent two layers of described light beam cutter unit with respect to the side angulation that is parallel to the light incident direction, the width that W is described strip light spots, n ₁for the refractive index of the transparent optical material that forms described light beam cutter unit, n ₀the refractive index of air, μ (n ₁) to be following function k (α, n) ask after partial derivative angle [alpha] is averaged to the function mu (n) of gained at n=n angle [alpha] ₁the time value, and

$k(\mathrm{\&alpha;},n)=\frac{\cos (\mathrm{\&alpha;}+\mathrm{<figure-callout\; id="0"\; label="arcsin\; n"\; filenames="HDA0000089337400000051.png"\; state="\{\{state\}\}">arcsin</figure-callout>}\frac{n_{}}{}\frac{{}_0\&CenterDot;\cos \mathrm{\&alpha;}}{n})}{\cos \left(\mathrm{<figure-callout\; id="0"\; label="arcsin\; n"\; filenames="HDA0000089337400000051.png"\; state="\{\{state\}\}">arcsin</figure-callout>}\frac{n_{}}{}\frac{{}_0\&CenterDot;\cos \mathrm{\&alpha;}}{n}\right)};$

The absolute value delta of the difference of vertical directed distance between two edge surfaces of the clearance band in the adjacent two layers on described light beam rearrangement unit ₂can be:

${\mathrm{\&Delta;}}_2=\frac{\mathrm{len}}{N\&CenterDot;f({\mathrm{\&beta;}}_2,n_2)}$

Wherein, β ₂or π-β ₂for the edge surface of the clearance band in each layer on the described light beam rearrangement unit surperficial angulation that comprises length dimension and thickness dimension with respect to this light beam rearrangement unit, n ₂for the refractive index of the transparent optical material that forms described light beam rearrangement unit, f (β ₂, n ₂) be that following function f (β, n) is at β=β ₂, n=n ₂the time value, and

$f(\mathrm{\&beta;},n)=\left|\frac{\cos (\mathrm{\&beta;}+\arcsin \frac{n\&CenterDot;\cos \mathrm{\&beta;}}{n_0})}{\cos \left(\arcsin \frac{n\&CenterDot;\cos \mathrm{\&beta;}}{n_0}\right)}\right|.$

Further preferably, can pass through W=| μ (n ₁) L ₁Δ α ₁| determine Δ α ₁.

Moreover, preferably, in described light beam rearrangement unit, along in the tactic described N of described thickness direction layer, the value of the vertical directed distance between the edge surface of the value of the vertical directed distance between the edge surface of the clearance band in the 1st layer and the clearance band in the N layer is can is-symbol contrary, and absolute value equates; Wherein when N is odd number, layer can be for not comprising the continuous transparent optical material layer of described clearance band along tactic (N+1)/2 of described thickness direction.

On the other hand, the present invention also provides a kind of beam shaping system of two-dimentional solid matter semiconductor laser array, it comprises the two-dimentional solid matter semiconductor laser array that sequentially optics coupling is got up, fast and slow axis beam collimation unit, fast axial light bundle compression unit, the light beam cutter unit, light beam rearrangement unit and slow axis beam-expanding collimation unit, wherein, described light beam cutter unit is the light beam cutter unit in above-mentioned arbitrary beam shaping system, described light beam rearrangement unit is the light beam rearrangement unit in above-mentioned arbitrary beam shaping system, described light beam cutter unit is identical with the number N of the described transparent optical material layer that described light beam rearrangement unit comprises, described light beam cutter unit is mutually vertical with the stacked direction of described transparent optical material layer in described light beam rearrangement unit.

Again on the one hand, the present invention also provides the beam shaping system of the non-solid matter semiconductor laser array of a kind of two dimension, it comprises two-dimentional non-solid matter semiconductor laser array, fast and slow axis beam collimation unit, the light beam cutter unit, light beam rearrangement unit and slow axis beam-expanding collimation unit, wherein, described light beam cutter unit is the light beam cutter unit in above-mentioned arbitrary beam shaping system, described light beam rearrangement unit comprises the light beam rearrangement unit in above-mentioned arbitrary beam shaping system that a plurality of through-thickness arrange, described light beam cutter unit is identical with the number N of the described transparent optical material layer that described light beam rearrangement unit comprises, described light beam cutter unit is mutually vertical with the stacked direction of described transparent optical material layer in described light beam rearrangement unit.

In addition, in above-mentioned various beam shaping systems, can be also, the optical element replacement that described light beam cutter unit is identical with the structure of described light beam rearrangement unit with structure, and described light beam rearrangement unit is replaced with constructing the optical element identical with the structure of described light beam cutter unit.

As mentioned above, the beam shaping system of semiconductor laser array of the present invention can realize the shaping purpose of semiconductor laser array light beam, and light beam cutter unit wherein and light beam rearrangement unit have manufacture and design simple, compact conformation, the advantages such as easy adjusting, if manufacture by integrated molding, also there is registration, without advantages such as cumulative errorss, facilitated widely the design of above-mentioned optical system, manufacture and use, and can reduce the loss of luminous power, improve shaping efficiency, be particularly suitable for the beam shaping of large power semiconductor laser array.

The accompanying drawing explanation

Fig. 1 is perspective diagram, shows existing one dimension semiconductor laser array;

Fig. 2 is schematic diagram, shows the principle of the beam shaping of one dimension semiconductor laser array, and wherein, this figure top shows shaping optical system, and this figure bottom shows the section configuration of the light beam of some Nodes in described shaping optical system;

Fig. 3 is planimetric map, shows twice refraction of the light in the first refractive system;

Fig. 4 is planimetric map, shows twice refraction of the light in the second dioptric system;

Fig. 5 is the variation relation figure of function k (α, n) with angle [alpha];

Fig. 6 is skeleton view, shows the described light beam cutter unit of cutting apart for the semiconductor laser array light beam of one embodiment of the present of invention;

Fig. 7 is planimetric map, show light beam cutter unit in Fig. 6 along the transparent optical material projection of folded direction layer by layer;

Fig. 8 is skeleton view, shows the described light beam rearrangement for the semiconductor laser array light beam rearrangement of one embodiment of the present of invention unit;

Fig. 9 is planimetric map, show light beam rearrangement unit in Fig. 8 along the transparent optical material projection of folded direction layer by layer;

Figure 10 is the light path schematic diagram, shows the beam shaping system of the described one dimension semiconductor laser array of one embodiment of the present of invention;

Figure 11 is the light path schematic diagram, shows the beam shaping system of the described two-dimentional solid matter semiconductor laser array of one embodiment of the present of invention; And

Figure 12 is the light path schematic diagram, shows the beam shaping system of the non-solid matter semiconductor laser array of the described two dimension of one embodiment of the present of invention.

Embodiment

The beam shaping element of semiconductor laser array of the present invention and the embodiment of system are described below with reference to the accompanying drawings.Those of ordinary skill in the art can recognize, in the situation that without departing from the spirit and scope of the present invention, can to described embodiment, be revised with various mode or its combination.Therefore, accompanying drawing is illustrative with being described in essence, rather than for limiting the protection domain of claim.In addition, in this manual, accompanying drawing draws not in scale, and identical Reference numeral means identical part.

As previously described, can utilize refraction effect to realize that the light beam of semiconductor laser array cuts apart and reset, thereby realize beam shaping.Fig. 3 and Fig. 4 show respectively twice refraction of the light in first refractive system and the second dioptric system.These two kinds of dioptric systems are two modification of a design (that is, making light realize translation by twice refraction).First refractive system shown in Fig. 3 is the cuboid made by transparent optical material (such as clear optical glass, transparent resin etc.) (being that bottom surface is that parallelogram and lateral vertical are in the quadrangular of bottom surface), its refractive index is n, and the refractive index of air is n ₀.This cuboid comprises incident end face 45 and outgoing end face 46 and two the parallelogram bottom surfaces (being the paper in Fig. 3) of the upper side 41 that is parallel to incident beam S and downside 42, light beam S.The light beam incident end face 45 of this cuboid with respect to downside 42 angulations that are parallel to the incident beam direction be α (, rotate counterclockwise the angle that rotate on the plane at light beam incident end face 45 places from the plane at downside 42 places that are parallel to the incident beam direction), the vertical range between its light beam incident end face 45 and light beam outgoing end face 46 is L.In Fig. 3, the incident beam S of upper side 41, downside 42 and bottom surface that S ' if mean is parallel to this cuboid along straight ahead through the position after this cuboid, S " mean this light beam in this cuboid after twice refraction the actual outgoing position during from its light beam outgoing end face 46 outgoing.After twice refraction, outgoing beam S " with respect to the side-play amount of incident beam S, be D.According to the refraction law of light, be easy to calculate, in described first refractive system, light beam is after twice refraction, and outgoing beam is with respect to side-play amount D=k (α, the n) L of incident beam, wherein,

$k(\mathrm{\&alpha;},n)=\frac{\cos (\mathrm{\&alpha;}+\mathrm{<figure-callout\; id="0"\; label="arcsin\; n"\; filenames="HDA0000089337400000051.png"\; state="\{\{state\}\}">arcsin</figure-callout>}\frac{n_{}}{}\frac{{}_0\&CenterDot;\cos \mathrm{\&alpha;}}{n})}{\cos \left(\mathrm{<figure-callout\; id="0"\; label="arcsin\; n"\; filenames="HDA0000089337400000051.png"\; state="\{\{state\}\}">arcsin</figure-callout>}\frac{n_{}}{}\frac{{}_0\&CenterDot;\cos \mathrm{\&alpha;}}{n}\right)}$

Fig. 5 is the variation relation figure of function k (α, n) with angle [alpha], and wherein solid dot shows function k (α, n) and angle [alpha] variation relation, and in calculating, the refractive index n of transparent optical material gets 1.5.As seen from Figure 5 k (α, n)=-k (π-α, n), and this variation relation approaches linear relationship in the scope of 45 ° to 135 ° very much.Therefore when L is constant, Δ D ≈ μ (n) L Δ α is arranged, wherein, the increment that Δ α is angle [alpha], Δ D is the increment of outgoing beam with respect to the side-play amount of incident beam, and μ (n) can be taken as, for example, function k (α, n) asks after partial derivative the average function about refractive index n of gained of angle [alpha] angle [alpha] again.In addition, angle [alpha] is within 45 ° to 135 ° the time, the distance along the light beam incident direction and the vertical range between them between incident end face 45 and outgoing end face 46 are very approaching, therefore, if angle [alpha] is selected between 45 ° to 135 °, so can with between incident end face 45 and outgoing end face 46 along the distance of light beam incident direction as the L in above-mentioned formula, like this can simplified measurement.

Referring to formula D=k (α, n) L and Fig. 3 and Fig. 5, can mean with outgoing beam two offset directions of light beam with respect to the symbol of the algebraic value of the side-play amount of incident beam.For example, when α<90 °, D>0, the downward deviation of light beam, and along with the increase of α, this deviation reduces linearly; And when α>90 °, D<0, the light beam deviation that makes progress, and along with the increase of α, this deviation increases linearly.

The second dioptric system shown in Fig. 4 is to be made by rectangular parallelepiped transparent optical material (such as clear optical glass, transparent resin etc.), and the refractive index of wherein said transparent optical material is n, and the refractive index of air is n ₀.Here, this rectangular parallelepiped comprises incident end face 45 and outgoing end face 46 and two rectangular bottom surface (being the paper in Fig. 4) of the upper side 41 that is parallel to incident beam S and downside 42, light beam S.This rectangular parallelepiped is included between its upper side 41 and downside 42 (two surfaces that comprise length dimension and thickness dimension) two planes that two edge surfaces of Dai，Gai clearance, the clearance band extended are perpendicular to described bottom surface (being parallel to described thickness direction) and are parallel to each other.The edge surface of this clearance band with respect to downside 42 angulations (may also be referred to as Dai inclination angle, this clearance) of this rectangular parallelepiped for β (, rotate counterclockwise the angle that rotate on the plane at the edge surface place of this clearance from the plane at downside 42 places of this rectangular parallelepiped), vertical directed distance between two edge surfaces of this clearance band (from the edge surface near light-incident end 45, point to the bee-line near the edge surface of light exit side face 46, may also be referred to as the bandwidth of this clearance band) is G.In Fig. 4, S means incident beam, S ' if mean incident beam S perpendicular to incident end face 45 along straight ahead through the position after this rectangular parallelepiped, S " mean this light beam in this second dioptric system after twice refraction the actual outgoing position during from its light beam outgoing end face 46 outgoing.After twice refraction, outgoing beam S " with respect to the side-play amount of incident beam S, be D.According to the refraction law of light, be easy to calculate, in described the second dioptric system, light beam is after twice refraction, and outgoing beam is with respect to side-play amount D=f (β, the n) G of incident beam, wherein,

$f(\mathrm{\&beta;},n)=\left|\frac{\cos (\mathrm{\&beta;}+\arcsin \frac{n\&CenterDot;\cos \mathrm{\&beta;}}{n_0})}{\cos \left(\arcsin \frac{n\&CenterDot;\cos \mathrm{\&beta;}}{n_0}\right)}\right|$

From above formula, see, f (β, n)>0, and f (β, n)=f (π-β, n) is arranged.When Dai inclination angle, clearance is only β or π-β (wherein, β fixes), can stipulate, when Dai inclination angle, clearance is β, the value G of the vertical directed distance between two edge surfaces of described clearance band be on the occasion of,, when inclination angle is π-β, G is negative value.Certainly, also can stipulate, when Dai inclination angle, clearance is β, the value G of the vertical directed distance between two edge surfaces of described clearance band is negative value, when inclination angle is π-β, G be on the occasion of.Like this, can mean with the symbol of the algebraic value of the described vertical directed distance of clearance band the vergence direction of two inclination angle complementations of clearance band.Simultaneously, can mean with outgoing beam two offset directions of light beam with respect to the symbol of the algebraic value of the side-play amount of incident beam.

If Dai inclination angle, clearance is only β or π-β (wherein, β fixes), so, outgoing beam is with respect to increment Delta D=f (β, n) the Δ G of the side-play amount of incident beam.

Utilize above-mentioned two kinds of dioptric systems can form the two kinds of beam shaping elements that can realize cutting and the rearrangement of light beam.For example, Fig. 6 is skeleton view, shows the described light beam cutter unit of cutting apart for the light beam of semiconductor laser array of one embodiment of the present of invention, and this light beam cutter unit has adopted the first refractive system principle shown in Fig. 3.Fig. 7 is planimetric map, show light beam cutter unit in Fig. 6 along the transparent optical material projection of folded direction layer by layer.As shown in Figure 6 and Figure 7, the described light beam cutter unit 40 of cutting apart for the light beam of semiconductor laser array of one embodiment of the present of invention comprises that stacked N (for convenience of describing, here N=6, in fact, N can be for being more than or equal to 2 natural number) transparent optical material layer P11-P16 that thickness is equal, each transparent optical material layer is flat cuboid (being that bottom surface is that parallelogram and lateral vertical are in the quadrangular of bottom surface).Described transparent optical material comprises such as clear optical glass, transparent resin etc., and its refractive index is n ₁, the refractive index of air is n ₀.The side 45 and 46 of the pair of parallel of each cuboid P11-P16 is respectively incident end face and the outgoing end face of described semiconductor laser array light beam, another is parallel to the incident direction of described semiconductor laser array light beam to parallel side 41 and 42, the pair of parallel quadrilateral bottom surface 43 of each cuboid P11-P16 and 44 and the bottom surface portions of adjacent transparent optical material layer stack.In Fig. 6 and Fig. 7, six hot spots that six light that 6 solid dot S1-S6 show a pair of side 41 that is parallel to described cuboid and 42 form while inciding each transparent optical material layer P11-P16 on incident end face 45, these six hot spots are respectively in the incident end face 45 of 6 the stacked layers in optical element 40, and described six corresponding light of hot spot are propagated respectively in the layer at place separately, refraction.In Fig. 6 and Fig. 7, as 6 hollow dots S1 '-S6 ' on plane, if mean that described six corresponding light of hot spot S1-S6 drop on picture Shang position, plane along straight ahead, right side is as 6 solid dot S1 on plane on right side "-S6 " show described six corresponding light of hot spot S1-S6 and drop on the physical location on the picture plane through twice refraction of place transparent optical material layer separately.In addition, as shown in Figure 6 and Figure 7, from transparent optical material layer P11 to P16, light beam incident end face 45 increases progressively with respect to side 42 angulations, and the vertical range between light beam incident end face 45 and light beam outgoing end face 46 or identical along the distance of light beam incident direction.Obviously, from transparent optical material layer P11 to P16, the light beam incident end face 45 of each transparent optical material layer also can successively decrease with respect to side 42 angulations, does not so also affect enforcement of the present invention.Preferably, from transparent optical material layer P11 to P16, the light beam incident end face 45 of each transparent optical material layer forms the increasing or decreasing arithmetic progression with respect to side 42 angulations.

Referring to Fig. 3 and Fig. 6, when the collimated light beam that uses 40 pairs of one dimension semiconductor laser arrays of light beam cutter unit is cut apart, preferably, at first can be according to the beam parameter product BPP of the slow-axis direction of this semiconductor laser array _sbeam parameter product BPP with the quick shaft direction of this semiconductor laser array _fdetermine the number of plies of light beam cutter unit 40

wherein, [] is for rounding symbol.Then, can, according to the length L en of the strip light spots on the incident end face 45 that incides light beam cutter unit 40, determine the thickness d on the described stacked direction of light beam cutter unit 40 ₁=Len.The light beam incident end face 45 of the adjacent layer on the light beam cutter unit 40 cut for light beam is with respect to the side 42 angulation α that are parallel to the light incident direction ₁difference Δ α ₁can determine according to the thickness W of described strip light spots.Specifically, if light beam is cut into to the appearance shown in Fig. 2, can pass through W=| μ (n ₁) L ₁Δ α ₁| determine Δ α ₁, wherein, μ (n ₁) be that aforementioned functions μ (n) is at n=n ₁the time value, L ₁for the light beam incident end face 45 of light beam cutter unit 40 and the vertical range between light beam outgoing end face 46 or along the distance of light beam incident direction.Should be noted that Δ α ₁can also pass through Else Rule (for example W>| μ (n ₁) L ₁Δ α ₁| or W<| μ (n ₁) L ₁Δ α ₁|) select.

Light beam cutter unit 40 can, by above-mentioned 6 integrated formation of transparent optical material layer, also can for example, form by the amalgamation of above-mentioned 6 transparent optical material layers (use optical adhesive bonding, use frame constraint etc.).

Should note, by the description above with reference to Fig. 3, can easily see, at first, described cuboid can not affect the side-play amount of outgoing beam with respect to incident beam along the translation of described light beam incident direction, in addition, while inciding light beam on incident end face 45 along the incident end face translation, from the light beam of outgoing end face 46 outgoing, correspondingly do equidirectional same amplitude translation.Like this, just the Design and manufacture for light beam cutter unit 40 provides very large dirigibility, and needs during fabrication the place of departure less.

On the other hand, Fig. 8 is skeleton view, shows the light beam rearrangement unit of the described light beam rearrangement for semiconductor laser array of one embodiment of the present of invention, and this light beam cutter unit has adopted the second dioptric system principle shown in Fig. 4.Fig. 9 is planimetric map, show light beam rearrangement unit in Fig. 8 along the transparent optical material projection of folded direction layer by layer.As shown in Figure 8 and Figure 9, the light beam rearrangement unit 50 of the described light beam rearrangement for semiconductor laser array of one embodiment of the present of invention is made by rectangular parallelepiped transparent optical material (such as clear optical glass, transparent resin etc.), and the refractive index of wherein said transparent optical material is n ₂, the refractive index of air is n ₀.Here, two surfaces that comprise length dimension and thickness dimension of this rectangular parallelepiped are called to upper side 41 and downside 42, two surfaces that comprise length dimension and width dimensions of this rectangular parallelepiped are called to upper bottom surface 43 and bottom surface 44, two surfaces that comprise width dimensions and thickness dimension of this rectangular parallelepiped are called to left surface (being the light beam incident end face) 45 and right flank (being light beam outgoing end face) 46.

Light beam rearrangement unit 50 is divided into the N layer equably along thickness direction, in Fig. 8, for convenience of meaning, without loss of generality, gets N=6.Two planes of two edge surfaces for being parallel to described thickness direction (perpendicular to upper bottom surface 43 and bottom surface 44) and being parallel to each other that comprise Dai，Gai clearance, clearance band one and this layer of uniform thickness, that extend in each layer between the upper side 41 of described rectangular parallelepiped and downside 42.Be similar to Fig. 4, the edge surface of the clearance band in each layer of the light beam rearrangement unit shown in Fig. 8 forms definite angle with respect to the downside 42 of its residing rectangular parallelepiped, and the edge surface of the clearance band in any two layers is equal or complementary with respect to downside 42 angulations of its residing rectangular parallelepiped.Concrete referring to Fig. 8, clearance band g21 in tactic the 1st to the 6th layer of the thickness direction of described rectangular parallelepiped is identical or complementary with respect to upper bottom surface 41 or bottom surface 42 angulations of this rectangular parallelepiped to g26, specifically, described angle in the 1st layer to the 3rd layer all equates, described angle in the 4th to the 6th layer all equates, and the described angle complementation in the described angle in the 1st to the 3rd layer and the 4th to the 6th layer.

In addition, 6 solid dot S1 on the light beam incident end face 45 of the light beam rearrangement unit shown in Fig. 8 "-S6 " show six light and incide formed six hot spots on incident end face 45 along the length direction of described rectangular parallelepiped, corresponding six light of these six hot spots incide respectively in 6 layers that evenly are divided into of light beam rearrangement unit 50, and in the layer at place separately, propagate respectively, after refraction from 46 outgoing of outgoing end face.6 hollow dots S1 on outgoing end face 46 " '-S6 " ' if mean six corresponding light of hot spot on incident end face 45 along straight ahead the outgoing position on outgoing end face 46,6 solid dot S1 on outgoing end face 46 " "-S6 " " show 6 corresponding light of hot spot on incident end face 45 through twice refraction of place Ceng Zhong clearance band separately and the outgoing position of the reality on outgoing end face 46.

Being similar to the second dioptric system principle shown in Fig. 4, is β for the Dai inclination angle, ，Dang clearance, light beam rearrangement unit in Fig. 8 ₂or π-β ₂(wherein, β ₂fix) time, can stipulate, when Dai inclination angle, clearance is β ₂the time, the value of the vertical directed distance between two edge surfaces of described clearance band be on the occasion of, when Dai inclination angle, clearance be π-β ₂the time, the value of the vertical directed distance between two edge surfaces of described clearance band is negative value.Certainly, also can stipulate, when Dai inclination angle, clearance is β ₂the time, the value of the vertical directed distance between two edge surfaces of described clearance band is negative value, working as inclination angle is π-β ₂the time, this value on the occasion of.Like this, can mean with the symbol of the algebraic value of the vertical directed distance between two edge surfaces of clearance band two vergence directions of clearance band, that is: when the symbol of the algebraic value of the vertical directed distance between two edge surfaces of any two-layer Air gap band is identical, Dai inclination angle, clearance during this is two-layer equates, otherwise, the clearance Dai inclination angle complementation during this is two-layer.For convenience of describing, the value G21 that now stipulates vertical directed distance between two the edge surface g21a of clearance band g21 in the 1st layer of the unit of light beam rearrangement shown in Fig. 8 and g21b on the occasion of, between two the edge surface g26a of the clearance band g26 in the 6th layer and g26b, the value G26 of vertical directed distance is negative value.Simultaneously, can mean with outgoing beam two offset directions of light beam with respect to the symbol of the algebraic value of the side-play amount of incident beam.Should be noted that afore mentioned rules just for convenience, does not affect the spirit and scope of the present invention.

In addition, in Fig. 8, the value G21 along the clearance band g21 in tactic the 1st to the 6th layer of the thickness direction of described rectangular parallelepiped to the bandwidth of g26 forms to G26 the arithmetic progression that successively decreases, and the value of wherein stipulating G21 is on the occasion of, i.e. G _2j=G ₂₁-(j-1) Δ ₂, j=1,2,3,4,5,6, Δ ₂absolute value for the difference of the bandwidth of the clearance band in adjacent two layers.Select suitable G21 and Δ ₂value, can make G21=-G26, G22=-G25, G23=-G24.Although not shown, if described number of plies N is odd number, for example, N=7, can select suitable G21 and Δ so ₂value, make G21=-G27, G22=-G26, G23=-G25, G24=0, middle layer (here the 4th layer) do not comprise the clearance band, is the transparent optical material layer extended continuously.In other words, when N is odd number, the bandwidth of the clearance band of middle one deck is 0, is radiated at middle one deck and the light beam propagated in this layer does not reflect.

When the light beam used being cut apart by light beam cutter unit 40 of the 50 pairs of one dimension semiconductor laser arrays in light beam rearrangement unit is reset, each that makes light beam rearrangement unit 50 layer by layer folded direction with respect to light beam cutter unit 40 each layer by layer folded direction clockwise rotate 90 ° in the plane perpendicular to the light incident direction.Light beam rearrangement unit 50 has been divided into the N layer equally,

[] for rounding symbol, the thickness d of light beam rearrangement unit 50 ₂can be determined by following formula: d ₂=| μ (n ₁) L ₁Δ α ₁(N-1) |+W, wherein, and as previously mentioned, L ₁for the light beam incident end face of each transparent optical material layer on described light beam cutter unit and the vertical range between light beam outgoing end face or along the distance of light beam incident direction, Δ α ₁for the light beam incident end face in the adjacent two layers of described light beam cutter unit with respect to the side angulation α that is parallel to the light beam incident direction ₁poor, the width that W is described strip light spots, μ (n ₁) be that aforementioned functions μ (n) is at n=n ₁the time value, n ₁refractive index for the transparent optical material of described light beam cutter unit.

The absolute value delta of the difference of vertical directed distance between two edge surfaces of the clearance band in the adjacent layer of light beam rearrangement unit 50 ₂can be determined by following formula:

${\mathrm{\&Delta;}}_2=\frac{\mathrm{Len}}{N\&CenterDot;f({\mathrm{\&beta;}}_2,n_2)}$

Wherein, β ₂(or π-β ₂) be the surperficial angulation that comprise length dimension and thickness dimension of the edge surface of the clearance band in each layer on light beam rearrangement unit 50 with respect to this light beam rearrangement unit, n ₂for the refractive index of the transparent optical material that forms light beam rearrangement unit 50, f (β ₂, n ₂) be that the function f (β, n) in the second dioptric system shown in prior figures 4 is at β=β ₂, n=n ₂the time value, Len is the length that incides the strip light spots on the incident end face 45 of light beam cutter unit 40.

Light beam rearrangement unit 50 can be by above-mentioned 6 integrated formation of transparent optical material layer, or can for example, by the amalgamation of above-mentioned 6 transparent optical material layers (use optical adhesive bonding, use frame constraint etc.), form.

Should note, by the description above with reference to Fig. 4 and Fig. 8, can easily see, at first, clearance band in each layer of light beam rearrangement unit 50 can not affect the side-play amount of outgoing beam with respect to incident beam along the translation of the length direction of described rectangular parallelepiped, in other words, for described light beam rearrangement unit 50, importantly Dai inclination angle, described clearance and bandwidth, rather than the position of clearance band in each layer.Secondly, for the bandwidth of clearance band, vergence direction and the bandwidth value G21 of the clearance band in the 1st layer can arrange arbitrarily, importantly the absolute value delta of the difference of the bandwidth of the clearance band in adjacent layer ₂.The absolute value delta of the difference of this bandwidth ₂determined light beam relative displacement between divided each cross-talk light beam gone out after by light beam rearrangement unit 50.Like this, just the Design and manufacture for light beam rearrangement unit 50 provides very large dirigibility, and needs during fabrication the place of departure less.In addition, along the length direction of light beam rearrangement unit 50, while inciding light beam on the incident end face 45 of light beam rearrangement unit 50 along the Width translation of light beam rearrangement unit 50, from the light beam of outgoing end face 46 outgoing, correspondingly do equidirectional same amplitude translation.

As previously described, the advantage that adopts the first refractive system to form the light beam cutter unit is, small volume (because every layer in incident end face and the vertical range between the outgoing end face or along the light beam incident direction the distance fix), save material (for example, during this optical element of integrated manufacture, only need to process and get final product the edge of the germule of this element), (this optical element does not have space formation) firm in structure etc., but shortcoming is, as previously mentioned, while adopting the first refractive system to be cut apart light beam, strictly say, the side-play amount of divided each sub-hot spot is with angle [alpha] ₁variation relation be not linear, fortunately, when light beam is cut apart, this deviation there is no impact.The advantage that adopts the second dioptric system to form the light beam rearrangement unit is, each divided sub-hot spot is when resetting, and side-play amount is strict linear with the variation relation of the bandwidth of clearance band, and this point is very important for light beam rearrangement.

Obviously, adopt the second dioptric system to form the light beam cutter unit and adopt the first refractive system to form the light beam rearrangement unit and still can complete the shaping of light beam, still have and manufacture and design simple, compact conformation, the easy advantage such as adjusting, if manufacture by integrated molding, also there is registration, without advantages such as cumulative errorss.In other words, foregoing light beam cutter unit 40 can be the optical element of structure identical with the structure of described light beam rearrangement unit 50 (but structural parameters can be not identical), and described light beam rearrangement unit 50 can be also the optical element of structure identical with the structure of described light beam cutter unit 40 (but structural parameters can be not identical).Therefore, within this combination still drops on invention which is intended to be protected.In this combination, light beam cutter unit number of plies N, thickness d ₁, the clearance band in adjacent layer two edge surfaces between the absolute value delta of difference of vertical directed distance ₁and the number of plies N of light beam rearrangement unit, thickness d ₂, the light beam incident end face in adjacent layer is with respect to the difference Δ α of the side angulation that is parallel to the light incident direction ₂can and utilize the formula of front to determine at an easy rate according to the beam shaping principle, just be not described in detail here.

Three embodiment of the beam shaping system of semiconductor laser array of the present invention are described below with reference to Figure 10, Figure 11 and Figure 12.Figure 10 is the light path schematic diagram, show the beam shaping system of the described one dimension semiconductor laser array of one embodiment of the present of invention, wherein, Figure 10 top shows the side view of this system, Figure 10 middle part shows the vertical view of this system, and Figure 10 bottom shows the section configuration of the light beam at Node B 1, B2, B3 and B4 place in this system.Figure 11 is the light path schematic diagram, show the beam shaping system of the described two-dimentional solid matter semiconductor laser array of one embodiment of the present of invention, wherein, Figure 11 top shows the side view of this system, Figure 11 middle part shows the vertical view of this system, and Figure 11 bottom shows the section configuration of the light beam at Node B 1, B2, B3 and B4 place in this system.Figure 12 is the light path schematic diagram, show the beam shaping system of the non-solid matter semiconductor laser array of the described two dimension of one embodiment of the present of invention, wherein, Figure 12 top shows the side view of this system, Figure 12 middle part shows the vertical view of this system, and Figure 12 bottom shows the section configuration of the light beam at Node B 1, B2, B3 and B4 place in this system.All light beam section configurations in Figure 10 to Figure 12 are the shape in the XY plane.

In Figure 10-Figure 12, although show and adopt first refractive system formation light beam cutter unit, adopt the second dioptric system to form the light beam rearrangement unit, but in other embodiments, also can adopt the second dioptric system to form the light beam cutter unit, adopt the first refractive system to form the light beam rearrangement unit according to similar beam shaping principle, describe in detail no longer one by one herein.

As shown in figure 10, the beam shaping system of the described one dimension semiconductor laser array of one embodiment of the present of invention comprises one dimension semiconductor laser array 1, fast and slow axis beam collimation unit 2, light beam cutter unit 40, light beam rearrangement unit 50 and slow axis beam-expanding collimation unit 7.The number N of the described transparent optical material layer that light beam cutter unit 40 comprises with light beam rearrangement unit 50 is identical, the stacked direction quadrature of the described transparent optical material layer in light beam cutter unit 40 and light beam rearrangement unit 50.Feature structure parameter in thickness, the number of plies and the adjacent layer of light beam cutter unit 40 and light beam rearrangement unit 50 is determined according to the description of front.

As shown in figure 11, the beam shaping system of the described two-dimentional solid matter semiconductor laser array of one embodiment of the present of invention comprises two-dimentional solid matter semiconductor laser array 1 ', fast and slow axis beam collimation unit 2, fast axial light bundle compression unit 3, light beam cutter unit 40, light beam rearrangement unit 50 and slow axis beam-expanding collimation unit 7.Spacing between adjacent two row laser instruments in two dimension solid matter semiconductor laser array 1 ' is general international standard spacing 1.8mm.The number N of the described transparent optical material layer that light beam cutter unit 40 comprises with light beam rearrangement unit 50 is identical, the stacked direction quadrature of the described transparent optical material layer in light beam cutter unit 40 and light beam rearrangement unit 50.Feature structure parameter in thickness, the number of plies and the adjacent layer of light beam cutter unit 40 and light beam rearrangement unit 50 is determined according to the description of front.

As shown in figure 12, the beam shaping system of the non-solid matter semiconductor laser array of the described two dimension of one embodiment of the present of invention comprises one dimension semiconductor laser array 1 ", fast and slow axis beam collimation unit 2, light beam cutter unit 40, light beam rearrangement unit 50 ' and slow axis beam-expanding collimation unit 7 that by a plurality of through-thickness, stacked optical element 50 forms.The two dimension non-solid matter semiconductor laser array 1 " in adjacent two row laser instruments between spacing be 2mm-10mm.The number N of the described transparent optical material layer that light beam cutter unit 40 comprises with each optical element 50 in light beam rearrangement unit 50 ' is identical, the stacked direction quadrature of the described transparent optical material layer in light beam cutter unit 40 and light beam rearrangement unit 50 '.Feature structure parameter in thickness, the number of plies and the adjacent layer of each optical element 50 in light beam cutter unit 40 and light beam rearrangement unit 50 ' is determined according to the description of front.

Much more no longer the principle of work of optical system shown in Figure 10 to Figure 12 is similar to optical system shown in Fig. 2, to do description herein.The optical system of the array beam shaping of semiconductor laser shown in Figure 10 to Figure 12 also can comprise the spherical surface focusing lens 8 that are focused into a hot spot for the uniform light spots by 7 outputs of slow axis beam-expanding collimation unit.

As mentioned above, the beam shaping system of semiconductor laser array of the present invention can realize the shaping purpose of semiconductor laser array light beam, and but the light beam cutter unit that uses of system and light beam rearrangement unit have advantages of registration, compact conformation integrated molding, without cumulative errors, easily regulate, design, manufacture and the use of said system have been facilitated widely, and can reduce the loss of luminous power, improve shaping efficiency, be particularly suitable for the beam shaping of large power semiconductor laser array.

Accompanying drawing has been described the beam shaping system of semiconductor laser array of the present invention in the mode of example above with reference to.But, it will be appreciated by those skilled in the art that and can also on the basis that does not break away from content of the present invention, make various improvement for the described array beam shaping of semiconductor laser system of the invention described above.Therefore, protection scope of the present invention should be determined by the content of appending claims.

Claims (8)

1. the beam shaping system of an one dimension semiconductor laser array, comprise one dimension semiconductor laser array, fast and slow axis beam collimation unit, light beam cutter unit, light beam rearrangement unit and slow axis beam-expanding collimation unit that sequentially optics coupling is got up, wherein,

Described light beam cutter unit comprises the transparent optical material layer that a stacked N thickness is equal, N is natural number, N >=2, described each transparent optical material layer is flat cuboid, the side of the pair of parallel of this cuboid is respectively incident end face and the outgoing end face of described semiconductor laser array light beam, another of this cuboid be the incident direction in described semiconductor laser array light beam to parallel parallel sided, the parallelogram bottom surface of this cuboid and the bottom surface portions of adjacent transparent optical material layer stack, wherein, described side angulation increasing or decreasing along the described light beam incident end face in tactic described each transparent optical material layer of described stacked direction with respect to the incident direction that is parallel to described semiconductor laser array light beam, described incident end face in described each transparent optical material layer is identical with the vertical range between the outgoing end face or identical along the distance of described light beam incident direction,

Described light beam rearrangement unit is made by the rectangular parallelepiped transparent optical material, this rectangular parallelepiped transparent optical material also is divided into N stacked layer equably along thickness direction, in each described layer, comprise with this layer of uniform thickness, the clearance band extended between two surfaces that comprise length dimension and thickness dimension of described rectangular parallelepiped, two edge surfaces of this clearance band are two planes that are parallel to described thickness direction and are parallel to each other, the edge surface of the described clearance band in any two described layers is identical or complementary with respect to the surperficial angulation that comprises length dimension and thickness dimension of described rectangular parallelepiped, value along vertical directed distance between two edge surfaces of the described clearance band in tactic each the described layer of described thickness direction forms the arithmetic progression that successively decreases, wherein, between two edge surfaces of the described clearance band in first layer the value of vertical directed distance be made as on the occasion of, the symbol of the value of two vertical directed distances if this successively decreases in arithmetic progression is identical, the edge surface that means the described clearance band in two layers corresponding with the value of these two vertical directed distances is identical with respect to the surperficial angulation that comprises length and thickness dimension of described rectangular parallelepiped, the symbol of the value of two vertical directed distances if this successively decreases in arithmetic progression is contrary, mean the surperficial angulation complementation that comprise length dimension and thickness dimension of the edge surface of the described clearance band in two layers corresponding with the value of these two vertical directed distances with respect to described rectangular parallelepiped, the value of a vertical directed distance if this successively decreases in arithmetic progression is zero, mean that the layer corresponding with this vertical directed distance be not for comprising the continuous transparent optical material layer of clearance band, and

Described light beam cutter unit is mutually vertical with the stacked direction of described N transparent optical material layer in described light beam rearrangement unit.

2. the beam shaping system of one dimension semiconductor laser array according to claim 1, wherein, described light beam cutter unit and described light beam rearrangement unit be by described N the integrated formation of transparent optical material layer, or form by described N transparent optical material layer amalgamation.

3. the beam shaping system of one dimension semiconductor laser array according to claim 2, wherein, in described light beam cutter unit, along the described light beam incident end face in tactic described each transparent optical material layer of described stacked direction, with respect to the described side angulation of the incident direction that is parallel to described semiconductor laser array light beam, form arithmetic progression.

4. the beam shaping system of one dimension semiconductor laser array according to claim 3, wherein,

bPP _sfor the beam parameter product of the slow-axis direction of described semiconductor laser array, BPP _ffor the beam parameter product of the quick shaft direction of described semiconductor laser array, [] is for rounding symbol;

Thickness d on the stacked direction of the described transparent optical material layer of described light beam cutter unit ₁length L en for the strip light spots on the described light beam incident end face that incides described light beam cutter unit;

Thickness d on the stacked direction of the described transparent optical material layer of described light beam rearrangement unit ₂for d ₂=| μ (n ₁) L ₁Δ α ₁(N-1) |+W, wherein, L ₁for the light beam incident end face of each transparent optical material layer on described light beam cutter unit and the vertical range between light beam outgoing end face or along the distance of light beam incident direction, Δ α ₁poor for the light beam incident end face in the adjacent two layers of described light beam cutter unit with respect to the side angulation that is parallel to the light incident direction, the width that W is described strip light spots, n ₁for the refractive index of the transparent optical material that forms described light beam cutter unit, n ₀the refractive index of air, μ (n ₁) to be following function k (α, n) ask after partial derivative the function mu (n) of the gained of again angle [alpha] being averaged in the scope of 45 ° to 135 ° at n=n to angle [alpha] ₁the time value, and

$k(\mathrm{\&alpha;},n)=\frac{\cos (\mathrm{\&alpha;}+\arcsin \frac{n_0\&CenterDot;\cos \mathrm{\&alpha;}}{n})}{\cos \left(\arcsin \frac{n_0\&CenterDot;\cos \mathrm{\&alpha;}}{n}\right)};$

The absolute value delta of the difference of vertical directed distance between two edge surfaces of the clearance band in the adjacent two layers on described light beam rearrangement unit ₂for:

${\mathrm{\&Delta;}}_2=\frac{\mathrm{Len}}{N\&CenterDot;f({\mathrm{\&beta;}}_2,n_2)}$

Wherein, β ₂or π-β ₂for the edge surface of the clearance band in each layer on the described light beam rearrangement unit surperficial angulation that comprises length dimension and thickness dimension with respect to this light beam rearrangement unit, n ₂for the refractive index of the transparent optical material that forms described light beam rearrangement unit, f (β ₂, n ₂) be that following function f (β, n) is at β=β ₂, n=n ₂the time value, and

$f(\mathrm{\&beta;},n)=\left|\frac{\cos (\mathrm{\&beta;}+\arcsin \frac{n\&CenterDot;\cos \mathrm{\&beta;}}{n_0})}{\cos \left(\arcsin \frac{n\&CenterDot;\cos \mathrm{\&beta;}}{n_0}\right)}\right|\&CenterDot;$

5. the beam shaping system of one dimension semiconductor laser array according to claim 4, wherein, by W=| μ (n ₁) L ₁Δ α ₁| determine Δ α ₁.

6. the beam shaping system of one dimension semiconductor laser array according to claim 1, wherein, in described light beam rearrangement unit, along in the tactic described N of described thickness direction layer, the symbol of the value of the vertical directed distance between the edge surface of the value of the vertical directed distance between the edge surface of the clearance band in the 1st layer and the clearance band in the N layer is contrary, and absolute value equates; Wherein when N is odd number, along tactic (N+1)/2 of described thickness direction layer for not comprising the continuous transparent optical material layer of described clearance band.

7. the beam shaping system of a two-dimentional solid matter semiconductor laser array, comprise the two-dimentional solid matter semiconductor laser array that sequentially optics coupling is got up, fast and slow axis beam collimation unit, fast axial light bundle compression unit, the light beam cutter unit, light beam rearrangement unit and slow axis beam-expanding collimation unit, wherein, described light beam cutter unit is the light beam cutter unit in the described beam shaping system of the arbitrary claim in claim 1 to 6, described light beam rearrangement unit is the light beam rearrangement unit in the described beam shaping system of the arbitrary claim in claim 1 to 6, described light beam cutter unit is identical with the number N of the described transparent optical material layer that described light beam rearrangement unit comprises, described light beam cutter unit is mutually vertical with the stacked direction of described transparent optical material layer in described light beam rearrangement unit.

8. the beam shaping system of the non-solid matter semiconductor laser array of two dimension, comprise two-dimentional non-solid matter semiconductor laser array, fast and slow axis beam collimation unit, the light beam cutter unit, light beam rearrangement unit and slow axis beam-expanding collimation unit, wherein, described light beam cutter unit is the light beam cutter unit in the described beam shaping system of the arbitrary claim in claim 1 to 6, described light beam rearrangement unit comprises the light beam rearrangement unit in the described beam shaping system of the arbitrary claim as in claim 1 to 6 that a plurality of through-thickness arrange, described light beam cutter unit is identical with the number N of the described transparent optical material layer that described light beam rearrangement unit comprises, described light beam cutter unit is mutually vertical with the stacked direction of described transparent optical material layer in described light beam rearrangement unit.

Images