CN101916964A - Light beam polarization synthesizing device of large-power semiconductor lasers - Google Patents

Light beam polarization synthesizing device of large-power semiconductor lasers Download PDF

Info

Publication number
CN101916964A
CN101916964A CN 201010248163 CN201010248163A CN101916964A CN 101916964 A CN101916964 A CN 101916964A CN 201010248163 CN201010248163 CN 201010248163 CN 201010248163 A CN201010248163 A CN 201010248163A CN 101916964 A CN101916964 A CN 101916964A
Authority
CN
China
Prior art keywords
laser
light beam
polarization
divergence
incidence
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN 201010248163
Other languages
Chinese (zh)
Inventor
杜高社
陈胜石
薛常佳
杨华梅
卜英华
李刚
刘芳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
205TH INSTITUTE OF CHINA NORTH INDUSTRIES
Original Assignee
205TH INSTITUTE OF CHINA NORTH INDUSTRIES
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 205TH INSTITUTE OF CHINA NORTH INDUSTRIES filed Critical 205TH INSTITUTE OF CHINA NORTH INDUSTRIES
Priority to CN 201010248163 priority Critical patent/CN101916964A/en
Publication of CN101916964A publication Critical patent/CN101916964A/en
Pending legal-status Critical Current

Links

Images

Abstract

The invention discloses a light beam polarization synthesizing device of large-power semiconductor lasers, which can be used as a large-power laser light source. The device comprises two same large-power semiconductor lasers, two negative cylindrical surface mirrors, a polarizing beam splitter and a light beam aligning device, wherein the two lasers are arranged in a direction where a knot p is vertical to a knot n; linear polarizing light beams emitted by the first laser and the second laser respectively pass through the first negative cylindrical surface mirror and the second negative cylindrical surface mirror, and divergence angles in a slow axis direction are expanded to be consistent with divergence angles in a quick-axis direction, and the linear polarizing light beams are then transmitted and reflected by the polarizing beam splitter respectively a synthesized light beam, and the synthesized light beam is aligned into a parallel light beam by the light beam aligning device and then output. The invention solves the problems that the light beam has good distribution uniformity of light spots when the light beam synthesis is realized at the same time, so that the light beam polarization synthesizing device can be used as the laser light source in the specific field of military. In addition, the invention does not adopt any wave plates, and has the characteristics of simple structure composition, low cost and convenient integration of optical systems.

Description

Light beam polarization synthesizing device of large-power semiconductor lasers
Technical field
The invention belongs to the laser technique field, relate generally to a kind of high power semiconductor lasers, relate in particular to a kind of light beam polarization synthesizing device that the laser beam of two semiconductor lasers is synthesized.
Background technology
Semiconductor laser is compared with other laser to have that volume is little, in light weight, electro-optical efficiency is high, long working life, is easy to plurality of advantages such as direct electrical modulation, therefore is widely used in fields such as industry, military affairs, communication.Its shortcoming is that power output is low, also is subjected to certain limitation thereby it is used.The method that improves semiconductor laser power is that the luminescence unit with semiconductor laser is integrated into linear array or face array battle array device, but is subjected to dispelling the heat and the restriction of paraxial effective light requirement, and luminescence unit can not infinitely be piled up.The another kind of method that improves semiconductor laser power is exactly that light beam with a plurality of semi-conductor array lasers synthesizes one road light beam, launches by an optical channel, to improve output power of laser.Because semiconductor laser is the very high laser of a kind of degree of polarization, therefore can two semiconductor laser array light beams be synthesized one road light beam by polarization splitting prism, can obtain high-power, the better laser beam of hot spot uniformity by one tunnel light path by measures such as beam shapings.
Publication number is that the Chinese patent application of CN1972046A discloses a kind of light beam polarization synthesizing device, the placement that is parallel to each other of the p-n junction of two semiconductor laser, in order to realize two light compositings with polarization splitting prism, in a laser light path, with 1/2nd wave plates the light beam polarization direction of this light path is rotated 90 °, but do not established light-beam forming unit in the light path.
Publication number is that the Chinese patent application of CN101369716A also discloses a kind of light beam polarization synthesizing device, it is synthetic that this device employing right angle polarization coupled prism carries out light beam, gummed has a quarter-wave plate on a right angle face of this prism, another right angle face of one road light beam vertical incidence prism, have on the right angle face of quarter-wave plate by impinging perpendicularly on gummed after the inclined-plane reflection, light beam comes and goes twice in this wave plate, make the polarization direction half-twist of this light beam.Because this both sides, inclined-plane medium refraction index difference, the light beam when the transmission inclined-plane of the light beam by this wave plate reflected back can reflect, and can not overlap with another road light beam well.
In above two patent applications, all adopted the very sensitive wave plate of optical wavelength, and that semiconductor laser wavelength varies with temperature is bigger, therefore under different temperatures, the Wavelength of Laser difference, so combined coefficient also changes to some extent; And, adopt wave plate can increase the complexity of light path, cause cost to increase.In addition, because above-mentioned two synthesizers all can not obtain the good hot spot of hot spot uniformity.Therefore inapplicable some application demand that luminous power and hot spot uniformity are all had relatively high expectations.
Summary of the invention
First technical problem that the present invention will solve is, at the problem that prior art exists, provides a kind of power output big and volume is little, is convenient to the integrated light beam polarization synthesizing device of large-power semiconductor lasers of optical system.
Second technical problem that the present invention will solve be, the light beam polarization synthesizing device of large-power semiconductor lasers that is provided can use as the LASER Light Source of specific military scenario, and the laser beam of its output has good hot spot distributing homogeneity.
For solving the problems of the technologies described above, light beam polarization synthesizing device provided by the invention comprises first, second laser, polarization spectroscope and beam collimation device, described first, second laser is identical and be the semiconductor laser of power greater than 200w, first laser is positioned on the object focus of described beam collimation device and over against first plane of incidence of polarization spectroscope, second laser is positioned on the equivalent object focus of beam collimation device and over against second plane of incidence of polarization spectroscope, the p-n junction of first laser and second laser is vertical mutually; Described polarization spectroscope is for being coated with polarization beam splitter on cube Amici prism and 45 ° of light splitting surfaces; The linearly polarized laser bundle that described first laser sends is entered described polarization spectroscope and is transmitted to described beam collimation device by described first plane of incidence, the linearly polarized laser bundle that described second laser sends enters described polarization spectroscope by described second plane of incidence and is reflected to described beam collimation device, outgoing after the light beam after described polarization spectroscope is synthetic is collimated into collimated light beam by described beam collimation device.
The present invention also comprises two identical negative cylindrical mirrors, and the baseplane of the first negative cylindrical mirror is glued on first plane of incidence of described polarization spectroscope, and the generatrix direction that its concave surface one side is pointed to described first laser and cylinder is consistent with the quick shaft direction of first laser; The baseplane of the second negative cylindrical mirror is glued on second plane of incidence of described polarization spectroscope, and the generatrix direction that its concave surface one side is pointed to second laser and cylinder is consistent with the quick shaft direction of second laser; The described first negative cylindrical mirror receives the linearly polarized light beam that described first laser sends, keeping under the constant prerequisite of this linearly polarized light beam quick shaft direction angle of divergence the slow-axis direction angle of divergence with this linearly polarized light beam to expand restrainting consistent, and light beam fast, slow-axis direction is being sent into first plane of incidence of described polarization splitting prism simultaneously with the described quick shaft direction angle of divergence; The described second negative cylindrical mirror receives the linearly polarized light beam that described second laser sends, keeping under the constant prerequisite of this linearly polarized light beam quick shaft direction angle of divergence the slow-axis direction angle of divergence with this linearly polarized light beam to expand restrainting consistent, and light beam fast, slow-axis direction is being sent into second plane of incidence of described polarization splitting prism simultaneously with the described quick shaft direction angle of divergence.
According to the present invention, the peak power of described first, second laser is 250w, and centre wavelength is 905nm, and the angle of divergence of slow-axis direction is 8 °, and the angle of divergence of quick shaft direction is 25 °; The focal length of described first, second negative cylindrical mirror [3,4] is-13.1mm.
Overall technology effect of the present invention is embodied in following two aspects.
(1) thus the present invention obtains the orthogonal linearly polarized light in two bundle polarization directions with vertical mutually placement of the p-n junction of first, second laser, the realization light beam polarization is synthetic, the oval-shaped beam that two lasers are sent vertically superposes in addition, realizes the light intensity complementation.Compared with prior art, the present invention does not adopt any wave plate, and therefore, structure is formed simple, and volume is little, and it is integrated to be convenient to optical system.
(2) the present invention has also adopted two identical negative cylindrical mirrors, wherein, the first negative cylindrical mirror is glued at first plane of incidence of polarization spectroscope, the second negative cylindrical mirror is glued at second plane of incidence of polarization spectroscope, two negative cylindrical mirrors expand bundle to the slow-axis direction angle of divergence of first, second laser emitting light beam respectively, make laser beam fast, the slow-axis direction angle of divergence is basic identical, further improved the hot spot distributing homogeneity of synthetic light beam, thereby can satisfy specific military scenario its war skill requirement that proposes as LASER Light Source.
Description of drawings
Fig. 1 is that the structure of light beam polarization synthesizing device of the present invention is formed schematic diagram.
Fig. 2 is the size and the fast and slow axis angle of divergence schematic diagram of two semiconductor laser array luminescence units.
Fig. 3 is the schematic diagram after two semiconductor laser array luminescence units distributions and the synthetic stack.
Fig. 4 is the gummed schematic diagram of polarization splitting prism and negative cylindrical mirror.
Fig. 5 is the composition schematic diagram of beam collimation device.
Fig. 6 is the hot spot distribution and Overlay schematic diagram of expanding the two-beam of bundle without negative cylindrical mirror.
Fig. 7 is that the hot spot of the two-beam after negative cylindrical mirror expands bundle distributes and the Overlay schematic diagram.
Embodiment
The present invention is described in further detail below in conjunction with accompanying drawing and preferred embodiment.As shown in Figure 1, the preferred embodiment of light beam polarization synthesizing device of the present invention comprises two identical lasers 1 negative cylindrical mirror 3 and 4 identical with 2, two, polarization splitting prism 6 and beam collimation device 5.Two lasers 1 and 2 are selected the tunnel-effect type semiconductor laser for use, major parameter is: peak power 250w, centre wavelength 905nm, the angle of divergence of slow axis and quick shaft direction is 8 ° * 25 ° (referring to Fig. 2), the luminous array core number average of first, second laser 1,2 is 4, light-emitting zone is a (200 μ m) * b (200 μ m), and the gross power after synthesizing is 482w.First laser is over against first plane of incidence of polarization splitting prism 6 and be positioned on the object focus of beam collimation device 5, and second laser 2 is over against second plane of incidence of polarization splitting prism 6 and be positioned on the equivalent object focus of beam collimation device 5; Mutual vertical placement of the p-n junction of first, second laser 1,2, vertical mutually with the linear polarization that guarantees two lasers 1,2, realize that polarization is synthetic, the gross power after synthesizing is two laser power sums; The p-n junction of two lasers 1,2 is vertical mutually in addition places, and makes that also the luminous array face of two lasers 1,2 is vertical mutually, and then makes the synthetic back of hot spot of two laser 1,2 outgoing realize square crossing stack, light intensity complementation.In this preferred embodiment, the p-n junction of first laser 1 is the Width of drawing, and the p-n junction of second laser 2 is the length direction (referring to Fig. 3) of drawing.
According to shown in Figure 4, polarization splitting prism 6 is the block prism of length of side c=9mm, it is to adopt two ZF3 right-angle prism gummeds to form, be coated with the polarization spectro rete on cemented surface that is the light splitting surface, this polarization spectro rete has high permeability to the linearly polarized light from first plane of incidence, and has high reflectance for the linearly polarized light from second plane of incidence.In this preferred embodiment, the linearly polarized light of 6 pairs first laser 1 outgoing of polarization splitting prism carries out transmission and transmissivity is 97%, and the linearly polarized light of second laser 2 outgoing is reflected and reflectivity is 96%.The focal length of two negative cylindrical mirrors 3,4 is-13.1mm, and the baseplane is 9mm * 9mm, and all to be coated with transmitance on beam incident surface and the exit facet be 99.5% anti-reflection film.The baseplane of the first negative cylindrical mirror 3 is glued on first plane of incidence of polarization splitting prism 6, and it is consistent with the quick shaft direction of first laser 1 that concave surface one side is pointed to the generatrix direction of first laser 1 and cylinder; The baseplane of the second negative cylindrical mirror 4 is bonded on second plane of incidence of polarization splitting prism 6, and it is consistent with the quick shaft direction of first laser 2 that concave surface one side is pointed to the generatrix direction of second laser 2 and cylinder.
According to shown in Figure 5, beam collimation device 5 is by a negative lens and the collimating mirror group that positive lens constitutes, and the effective clear aperature after its combination is that d is 10mm, and focal distance f is 18.54mm.
See Fig. 1 again, the 8 ° angle of divergence beam expanders to 25 of the linearly polarized light beam that first laser 1 sends by the first negative cylindrical mirror, 3 its slow-axis directions of back °, the quick shaft direction angle of divergence remains unchanged, and the light beam that expands after restrainting is transmitted to beam collimation device 5 through polarization splitting prism 6; The 8 ° angle of divergence beam expanders to 25 of the linearly polarized light beam that second laser 2 sends by the second negative cylindrical mirror, 4 its slow-axis directions of back °, the quick shaft direction angle of divergence remains unchanged, the light beam that expands after restrainting reflexes to beam collimation device 5 through polarization splitting prism 6, thus two-beam is synthesized a branch of light; It is that collimated light beam is launched that beam collimation device 5 will synthesize beam collimation.
The purpose of light beam polarization synthesizing device of large-power semiconductor lasers of the present invention is not only provides a high-power semiconductor laser light source, but also will make this light source have good hot spot uniformity.In the present invention, though, by taking the vertical mutually measure of placing of p-n junction with two lasers 1,2, the hot spot distribution of two lasers, 1,2 outgoing is necessarily improved, be to be the oval hot spot (referring to Fig. 6) of two quadratures after first, second laser 1,2 emitted light beams collimate through the collimating mirror group, but still can not satisfy the application scenario very high uniformity requirement.For this reason, by adding the technical measures of two negative cylindrical mirrors 3,4, make that the minor axis of two oval hot spots by beam collimation device 5 is expanded, each laser facula is similar to circular distribution (referring to Fig. 7), promptly two bundle laser all are full of the clear aperature of beam collimation device 5, thereby obtain the light beam of hot spot spatial distribution good uniformity.

Claims (3)

1. light beam polarization synthesizing device of large-power semiconductor lasers, comprise first, second laser [1,2], polarization spectroscope [6] and beam collimation device [5], described first, second laser [1,2] is identical and be the semiconductor laser of power greater than 200w, first laser [1] is positioned on the object focus of described beam collimation device [5] and over against first plane of incidence of polarization spectroscope [6], and second laser [2] is positioned on the equivalent object focus of beam collimation device [5] and over against second plane of incidence of polarization spectroscope [6]; Described polarization spectroscope [6] is for being coated with polarization beam splitter on cube Amici prism and 45 ° of light splitting surfaces; It is characterized in that: described first laser [1] is vertical mutually with the p-n junction of second laser [2]; The linearly polarized laser bundle that described first laser [1] sends is entered described polarization spectroscope [6] and is transmitted to described beam collimation device [5] by described first plane of incidence, the linearly polarized laser bundle that described second laser [2] sends is entered described polarization spectroscope [6] and is reflected to described beam collimation device [5] by described second plane of incidence, outgoing after the light beam after described polarization spectroscope [6] is synthetic is collimated into collimated light beam by described beam collimation device [5].
2. light beam polarization synthesizing device of large-power semiconductor lasers according to claim 1, it is characterized in that: also comprise two identical negative cylindrical mirrors [3,4], the baseplane of the first negative cylindrical mirror [3] is glued on first plane of incidence of described polarization spectroscope [6], and it is consistent with the quick shaft direction of first laser [1] that its concave surface one side is pointed to the generatrix direction of described first laser [1] and cylinder; The baseplane of the second negative cylindrical mirror [4] is glued on second plane of incidence of described polarization spectroscope [6], and it is consistent with the quick shaft direction of second laser [2] that its concave surface one side is pointed to the generatrix direction of second laser [2] and cylinder; The described first negative cylindrical mirror [3] receives the linearly polarized light beam that described first laser [1] sends, keeping under the constant prerequisite of this linearly polarized light beam quick shaft direction angle of divergence the slow-axis direction angle of divergence with this linearly polarized light beam to expand restrainting consistent, and light beam fast, slow-axis direction is being sent into first plane of incidence of described polarization splitting prism [6] simultaneously with the described quick shaft direction angle of divergence; The described second negative cylindrical mirror [4] receives the linearly polarized light beam that described second laser [2] sends, keeping under the constant prerequisite of this linearly polarized light beam quick shaft direction angle of divergence the slow-axis direction angle of divergence with this linearly polarized light beam to expand restrainting consistent, and light beam fast, slow-axis direction is being sent into second plane of incidence of described polarization splitting prism [6] simultaneously with the described quick shaft direction angle of divergence.
3. light beam polarization synthesizing device of large-power semiconductor lasers according to claim 2, it is characterized in that: the peak power of described first, second laser [1,2] is 250w, centre wavelength is 905nm, and the angle of divergence of slow-axis direction is 8 °, and the angle of divergence of quick shaft direction is 25 °; The focal length of described first, second negative cylindrical mirror [3,4] is-13.1mm.
CN 201010248163 2010-08-05 2010-08-05 Light beam polarization synthesizing device of large-power semiconductor lasers Pending CN101916964A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201010248163 CN101916964A (en) 2010-08-05 2010-08-05 Light beam polarization synthesizing device of large-power semiconductor lasers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201010248163 CN101916964A (en) 2010-08-05 2010-08-05 Light beam polarization synthesizing device of large-power semiconductor lasers

Publications (1)

Publication Number Publication Date
CN101916964A true CN101916964A (en) 2010-12-15

Family

ID=43324393

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201010248163 Pending CN101916964A (en) 2010-08-05 2010-08-05 Light beam polarization synthesizing device of large-power semiconductor lasers

Country Status (1)

Country Link
CN (1) CN101916964A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102289079A (en) * 2011-07-22 2011-12-21 中国科学院长春光学精密机械与物理研究所 Wavelength beam combining mirror device realizing Brewster angle incidence
EP2933673A1 (en) * 2014-04-16 2015-10-21 KVANT spol. s r.o. Device for creation of intensive full-color light beam with circular cross-section, homogenous light intensity distribution and beam divergence from 0 to 10°
CN108490420A (en) * 2018-06-12 2018-09-04 深圳市镭神智能系统有限公司 A kind of micro mirror scanning optics
CN111293586A (en) * 2018-12-07 2020-06-16 上海航空电器有限公司 Semiconductor laser polarization beam combining device for laser illumination
WO2021076128A1 (en) * 2019-10-16 2021-04-22 Beijing Voyager Technology Co., Ltd. Systems and methods for laser generation based on polarized beams
CN114280463A (en) * 2021-12-31 2022-04-05 武汉锐科光纤激光技术股份有限公司 Chip testing system
US11435575B2 (en) * 2018-11-13 2022-09-06 Yonatan Gerlitz Optical configuration for a low level laser therapy device
CN115087908A (en) * 2020-02-19 2022-09-20 华为技术有限公司 Optical assembly and laser radar system

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1164793A (en) * 1997-08-19 1999-03-05 Fuji Photo Film Co Ltd Semiconductor laser light source and radiograph reading device
CN1672083A (en) * 2002-08-07 2005-09-21 浜松光子学株式会社 Light collecting device
CN1873466A (en) * 2005-05-30 2006-12-06 成序三 Optical system for synthesizing multi laser beams and method
CN1972046A (en) * 2006-11-21 2007-05-30 北京工业大学 High-power semiconductor laser polarization coupling apparatus and its method
CN101369716A (en) * 2008-09-25 2009-02-18 中国科学院长春光学精密机械与物理研究所 High power light beam coupling semiconductor laser
CN101464564A (en) * 2009-01-09 2009-06-24 嘉兴大合激光设备有限公司 High-power semiconductor laser beam composite apparatus

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1164793A (en) * 1997-08-19 1999-03-05 Fuji Photo Film Co Ltd Semiconductor laser light source and radiograph reading device
CN1672083A (en) * 2002-08-07 2005-09-21 浜松光子学株式会社 Light collecting device
CN1873466A (en) * 2005-05-30 2006-12-06 成序三 Optical system for synthesizing multi laser beams and method
CN1972046A (en) * 2006-11-21 2007-05-30 北京工业大学 High-power semiconductor laser polarization coupling apparatus and its method
CN101369716A (en) * 2008-09-25 2009-02-18 中国科学院长春光学精密机械与物理研究所 High power light beam coupling semiconductor laser
CN101464564A (en) * 2009-01-09 2009-06-24 嘉兴大合激光设备有限公司 High-power semiconductor laser beam composite apparatus

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102289079A (en) * 2011-07-22 2011-12-21 中国科学院长春光学精密机械与物理研究所 Wavelength beam combining mirror device realizing Brewster angle incidence
CN102289079B (en) * 2011-07-22 2013-11-27 中国科学院长春光学精密机械与物理研究所 Wavelength beam combining mirror device realizing Brewster angle incidence
EP2933673A1 (en) * 2014-04-16 2015-10-21 KVANT spol. s r.o. Device for creation of intensive full-color light beam with circular cross-section, homogenous light intensity distribution and beam divergence from 0 to 10°
CN108490420A (en) * 2018-06-12 2018-09-04 深圳市镭神智能系统有限公司 A kind of micro mirror scanning optics
US11435575B2 (en) * 2018-11-13 2022-09-06 Yonatan Gerlitz Optical configuration for a low level laser therapy device
CN111293586A (en) * 2018-12-07 2020-06-16 上海航空电器有限公司 Semiconductor laser polarization beam combining device for laser illumination
WO2021076128A1 (en) * 2019-10-16 2021-04-22 Beijing Voyager Technology Co., Ltd. Systems and methods for laser generation based on polarized beams
CN115087908A (en) * 2020-02-19 2022-09-20 华为技术有限公司 Optical assembly and laser radar system
CN115087908B (en) * 2020-02-19 2024-04-12 华为技术有限公司 Optical assembly and laser radar system
CN114280463A (en) * 2021-12-31 2022-04-05 武汉锐科光纤激光技术股份有限公司 Chip testing system
CN114280463B (en) * 2021-12-31 2023-08-08 武汉锐科光纤激光技术股份有限公司 Chip test system

Similar Documents

Publication Publication Date Title
CN101916964A (en) Light beam polarization synthesizing device of large-power semiconductor lasers
US9596034B2 (en) High brightness dense wavelength multiplexing laser
US6993059B2 (en) Apparatus for reducing spacing of beams delivered by stacked diode-laser bars
CN105158913A (en) Laser source, wavelength conversion light source, light-combining light source, and projection system
US9971159B2 (en) Reflective laser line-beam generator
CN202267786U (en) Reflectivity-variable laser beam splitter
CN111613969B (en) Semiconductor laser beam combining device
CN203871649U (en) High-power semiconductor laser beam expanding system
CN115954761A (en) Multi-single-tube semiconductor laser beam combining device
CN103944067A (en) High-power semiconductor laser beam combining system
CN110927984A (en) Adjustable transverse dislocation laser beam splitting/combining device
CN203909406U (en) Polarization beam-combining device of semiconductor laser
CN101242075B (en) Optical structure and its application
CN106918921A (en) A kind of laser display based on fly's-eye lens is polarized shimming apparatus for shaping
CN103944059B (en) High-power semiconductor laser beam expanding system
US20170299875A1 (en) Single-emitter line beam system
CN105098597B (en) Correcting system of laser, light source system and projection device
CN103887707B (en) A kind of semiconductor laser with high-power high light beam quality laser
CN101369717B (en) Multi-light beam coupling high power semiconductor laser unit
CN112103768B (en) Semiconductor laser
CN105511089A (en) Device for adjusting beam parametric product of big power semiconductor laser linear array
CN112563879A (en) Dense wavelength beam combining device of multi-single-tube semiconductor laser
CN203871653U (en) High-power semiconductor laser beam combining system
CN109638649B (en) High-power semiconductor stacked array space beam combination method and device
CN101840070B (en) LD (laser diode) mono-tube light beam shaping module

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Open date: 20101215