CN103887707B - A kind of semiconductor laser with high-power high light beam quality laser - Google Patents
A kind of semiconductor laser with high-power high light beam quality laser Download PDFInfo
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- CN103887707B CN103887707B CN201410140797.5A CN201410140797A CN103887707B CN 103887707 B CN103887707 B CN 103887707B CN 201410140797 A CN201410140797 A CN 201410140797A CN 103887707 B CN103887707 B CN 103887707B
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Abstract
A kind of semiconductor laser with high-power high light beam quality laser, it builds exterior resonant cavity outside semiconductor gain elements, and collimation optics, spectral dispersion element and output coupling mirror are set gradually in exterior resonant cavity.Semiconductor gain elements include several active gain areas linearly arranged in parallel, and the film layer to optical maser wavelength high reflectance is coated with the side in each active gain area, and opposite side is coated with the film layer to optical maser wavelength high transmittance.Collimation optics are coated with the rear of high transmittance film layer side positioned at semiconductor gain elements, and the central optical axis that its center optical axis direction launches light beam with the semiconductor optical booster element overlap.Spectral dispersion element is positioned over the rear of collimation optics at a certain angle.Output coupling mirror is located at the rear of the spectral dispersion element along direction of beam propagation.Present invention improves the pattern of laser concussion, the power output of laser is effectively improved on the premise of laser beam quality is not influenceed.
Description
Technical field
The present invention relates to a kind of ECLD power spreading techniques, have more specifically to one kind big
The semiconductor laser of power high light beam quality laser.
Background technology
Laser is because its brightness is high, monochromaticjty is good, collimation and good condensing performance, in scientific research, military and national defense, industry
The fields such as processing, astronomical observation and Information Communication are widely used.The beam quality of laser is description laser propagation mistake
The parameter with collimation capability is focused in journey, the laser of high light beam quality can obtain smaller hot spot, the meeting after collimation after focusing
Smaller far-field divergence angle is obtained, therefore in actual applications, the laser of high light beam quality is always the direction that people pursue.But
With the increase of laser output power, the factor such as fuel factor can gradually be exaggerated, so that the beam quality of laser is influenceed,
Therefore the beam quality of laser and power are always mutually contradictory presence, and practical application must be weighed when laser is developed
Pros and cons, the two parameters are weighed.
Semiconductor laser and other kinds of laser（Such as gas laser, solid state laser）Compare, with electric light
It is in hgher efficiency（Non-fiber coupling loss or secondary pumping depletion）, low cost（Without the high-power energy-transmission optic fibre that price is high）Etc. excellent
Point, but its beam quality with laser output power increase can severe exacerbation, how keep beam quality on the premise of have
The power output of effect extension semiconductor laser, is always the focus of this area research.
Semiconductor laser array（Bar bar）Technology is a kind of very easily semiconductor laser power spreading techniques, its principle
Exactly several semiconductor light emitting units are arranged in parallel within substrate, so that the power output of laser is with luminescence unit number line
Property increase, but because the laser beam near field corrugated that obtains in this way is divided, therefore its beam quality is very poor, it is impossible to have
The be applied to fiber coupling and welding, cutting etc. of effect need the technical field of high light beam quality laser.Therefore, how in extension
During the power output of semiconductor laser array, effective guarantee its beam quality is a technical problem in the urgent need to address.
The content of the invention
In view of the shortcomings of the prior art, ECLD work(is utilized it is an object of the invention to provide one kind
Rate expansion technique, obtains the semiconductor laser with high-power high light beam quality laser.
To achieve the above object, the technical scheme is that：A kind of partly leading with high-power high light beam quality laser
Body laser, it builds exterior resonant cavity outside semiconductor gain elements, and collimating optics unit is set gradually in the exterior resonant cavity
Part, spectral dispersion element and output coupling mirror, the semiconductor gain elements include several active increasings linearly arranged in parallel
Beneficial area, the film layer to optical maser wavelength high reflectance is coated with the side in each active gain area, and opposite side is coated with to optical maser wavelength
The film layer of high transmittance, after the collimation optics are coated with high transmittance film layer side positioned at the semiconductor gain elements
Side, the central optical axis that its center optical axis direction launches light beam with the semiconductor optical booster element overlap, the spectrum colour
Scattered element is positioned over the rear of the collimation optics at a certain angle, and the output coupling mirror is located at along direction of beam propagation
The rear of the spectral dispersion element.
The collimation optics by selected from post lens, microlens array or spherical lens at least two constitute it is saturating
Microscope group.
The lens group that the collimation optics are made up of post lens and spherical lens, by optical gain element hair
The light beam of injection is focused on, and is slightly different the direction of propagation after the focusing that each active gain area sent, but focal position
It is identical.
The lens group that the collimation optics are made up of post lens, microlens array and spherical lens, by the light
The beam collimation that booster element is launched is directional light, focuses on light beam by the spherical lens, and make each active
The direction of propagation after the beam collimation that gain region is sent all is slightly different.
The spectral dispersion element, is positioned at the back focal plane of focusing optic at a certain angle, by all edges
The light beam coupling of the different directions of propagation is a branch of light beam propagated along optical axis direction.The spectral dispersion element preferably glares
Grid.
The output coupling mirror selects level crossing or concave mirror, minute surface to be coated with the film layer of about 80% transmitance.
The semiconductor gain elements material is (InGa) (AsP)/InP, and its active gain area is shaped as cone barrel.
Compared with prior art, it is of the invention by building exterior resonant cavity outside semiconductor gain elements, to improve laser
The pattern of concussion, and spectral dispersion element is inserted into by exterior resonant cavity, have on the premise of laser beam quality is not influenceed
Improve to effect the power output of laser.Cause high light beam quality laser can be obtained after focusing smaller hot spot,
Smaller far-field divergence angle will be obtained after collimation, so that can be effectively applied to fiber coupling and welding, cutting etc. needs height
The technical field of beam quality laser, expands the range of application of semiconductor laser.
Brief description of the drawings
Fig. 1 is one embodiment of the present of invention, semiconductor laser structure with high-power high light beam quality laser and
Light path schematic diagram, 5, the active gain area of semiconductor gain elements 1 merely exemplary picture in figure（Do not draw entirely）, it is intended that show
Go out its arrangement and shape；
Fig. 2 is an alternative embodiment of the invention, the semiconductor laser structure with high-power high light beam quality laser
And light path schematic diagram, 5, the active gain area of semiconductor gain elements 1 merely exemplary picture in figure（Do not draw entirely）, it is intended that
Its arrangement and shape are shown.
Reference in figure：
1st, 1'- semiconductor gain elements；2nd, 5- collimation optics；2a- post lens；
2b, 5b- spherical lens；3rd, 3'- balzed grating,s；4th, 4'- output coupling mirrors；
5a- lenticules.
Specific embodiment
Semiconductor laser of the present invention with high-power high light beam quality laser, using realizing the same of beam shaping
When, the optocoupler of each luminescence unit of semiconductor laser array is combined into the method for beam of laser output, significantly improve laser
The beam quality of device, solving existing beam shaping technology can not change the spy that semiconductor laser array light beam space is isolated
Property.
Semiconductor laser of the present invention includes semiconductor gain elements, collimation optics, spectral dispersion element and coupling
Outgoing mirror.According to embodiments of the present invention, it is described several wherein the semiconductor gain elements 1,1' include several active gain areas
Active gain area is linearly arranged in parallel, and under the excitation of impressed current, each active gain area can produce certain line width
Laser gain.The side in the active gain area is coated with to optical maser wavelength high reflectance（Reflectivity T>90%）Film layer, opposite side
It is coated with to optical maser wavelength high transmittance（Reflectivity T<10%）Film layer.The collimation optics 2,5 are located at the semiconductor light
The rear that booster element is coated with high transmittance film layer side is learned, its center optical axis direction puies forward optical gain element and sends out with the report
The central optical axis of outgoing beam overlap, and its effect is that the light beam that can launch the optical gain element is focused on, and has each
The direction of propagation after the focusing that source gain area is sent all is slightly different, but focal position is identical, or can be by optical gain element
The beam collimation that part is launched is directional light, focuses on light beam by spherical lens, and sent each active gain area
Beam collimation after the direction of propagation be all slightly different.The spectral dispersion element, particularly balzed grating, 3,3', with certain angle
Degree is positioned over the rear of collimation optics, and it by all light beam couplings along the different directions of propagation is a branch of along optical axis that its effect is
The light beam that direction is propagated.The output coupling mirror 4,4' is located at the rear of the spectral dispersion element along direction of beam propagation, its
Effect is that the portion of energy of light beam is projected into output, and portion of energy is reflected back whole laser system, so as to increase in the semiconductor
In the gain spectral range of beneficial element 1,1', multiple wavelength laser concussions are formed.
Embodiment one：
Fig. 1 shows that the embodiment of the present invention one has the semiconductor laser structure and light of high-power high light beam quality laser
Road.In the present embodiment, semiconductor gain media is (InGa) (AsP)/InP, is had comprising 19 in its semiconductor gain elements 1
Source gain area, the shape in each active gain area is cone barrel, to reduce the transverse mode of its output laser, so as to obtain preferably
Beam quality.Thereafter surface is coated with the high reflection film to 940nm ± 5nm, and its preceding surface is coated with saturating to the height of 940nm ± 5nm
Cross rate film.Output coupling mirror 4' is the concave mirror for being coated with 80% transmitance film layer, and the light beam that active gain area sends is by post lens
After 2a and spherical lens 2b are collimated to fast axle and slow axis respectively, focused on balzed grating, 3 by spherical lens 2b, reflected
Afterwards, light beam is coupled out the output of the fractional transmission of mirror 4, partial feedback concussion.If using 1 order diffraction of balzed grating, 3, its sudden strain of a muscle
Credit angle θ s are determined by following formula：
Wherein λ is the centre wavelength for exporting laser, and d is the space periodic of grating, θ0Be the incident angle of laser, sin with
Arcsin is respectively sinusoidal and arcsine oeprator.
Because balzed grating, is slightly different to the laser reflectivity of different wave length, therefore each active gain area is corresponding sharp
Also there is linear difference in light concussion wavelength, therefore final laser output will be formed with the locus in each active gain area
The spatial distribution of pectination.Whole system equivalent to 19 space overlappings of sub- laser system, such that it is able to effective expanded laser light
Power output, without deteriorating its beam quality.
Embodiment two：
Fig. 2 shows that the embodiment of the present invention two has the semiconductor laser structure and light of high-power high light beam quality laser
Road.In the present embodiment, semiconductor gain media is (InGa) (AsP)/InP, and 19 are included in its semiconductor gain elements 1'
Active gain area, the shape in each active gain area is cone barrel, to reduce the transverse mode of its output laser, so as to obtain more preferably
Beam quality.Thereafter surface is coated with the high reflection film to 940nm ± 5nm, and its preceding surface is coated with the height to 940nm ± 5nm
Transmitance film.Output coupling mirror 4 is the level crossing for being coated with 80% transmitance film layer, and the light beam that active gain area sends is by micro-
After mirror 5a collimations, by spherical lens 5b focusing illuminations to balzed grating, 3', mirror 4' fractional transmissions are coupled out after being reflected
Output, partial feedback concussion.If using 1 order diffraction of balzed grating, 3', its blaze angle θ s are determined by following formula：
Wherein λ be export laser centre wavelength, d for grating space periodic, θ 0 for laser incident angle, sin with
Arcsin is respectively sinusoidal and arcsine oeprator.
Because balzed grating, is slightly different to the laser reflectivity of different wave length, therefore the corresponding laser shake in each gain region
Swing wavelength and also there is linear difference with the locus of each gain region, therefore final laser output will form the light of pectination
Spectral structure.Whole system equivalent to 19 space overlappings of sub- laser system, therefore can effective expanded laser light output work
Rate, without deteriorating its beam quality.
The foregoing is only presently preferred embodiments of the present invention, be not intended to limit the invention, it is all it is of the invention spirit and
Within principle, any modification, equivalent substitution and improvements made etc. should be included within the scope of the present invention.
Claims (8)
1. a kind of semiconductor laser with high-power high light beam quality laser, it is characterised in that in semiconductor gain elements
Exterior resonant cavity is built in outside, and collimation optics, spectral dispersion element and output coupling mirror are set gradually in the exterior resonant cavity,
The semiconductor gain elements include several active gain areas linearly arranged in parallel, are plated in the side in each active gain area
There is the film layer to optical maser wavelength high reflectance, opposite side is coated with the film layer to optical maser wavelength high transmittance, the shape in active gain area
Shape is cone barrel；The collimation optics are located at the rear that the semiconductor gain elements are coated with high transmittance film layer side,
The central optical axis that its center optical axis direction launches light beam with the semiconductor optical booster element overlap, the collimating optics unit
The lens group that the lens group or lenticule and spherical lens that part is made up of post lens and spherical lens are constituted；The spectral dispersion
Element is positioned over the rear of the collimation optics at a certain angle, and the output coupling mirror is located at institute along direction of beam propagation
State the rear of spectral dispersion element.
2. semiconductor laser according to claim 1, it is characterised in that the collimation optics be by post lens and
The lens group of spherical lens composition, the light beam that the optical gain element is launched is focused on, and is sent out each active gain area
The direction of propagation after the focusing for going out all is slightly different, but focal position is identical.
3. semiconductor laser according to claim 1, it is characterised in that the collimation optics be by lenticule and
The lens group of spherical lens composition, the beam collimation that the optical gain element is launched is directional light, by the sphere
Lens focus on light beam, and are slightly different the direction of propagation after the beam collimation that each active gain area sent.
4. the semiconductor laser according to Claims 2 or 3, it is characterised in that the spectral dispersion element is with certain angle
Degree is positioned at the back focal plane of focusing optic, is a branch of along optical axis by all light beam couplings along the different directions of propagation
The light beam that direction is propagated.
5. semiconductor laser according to claim 4, it is characterised in that the spectral dispersion element is balzed grating,.
6. semiconductor laser according to claim 5, it is characterised in that the output coupling mirror is level crossing, minute surface
It is coated with the film layer of about 80% transmitance.
7. semiconductor laser according to claim 5, it is characterised in that the output coupling mirror is concave mirror, minute surface
It is coated with the film layer of about 80% transmitance.
8. semiconductor laser according to claim 7, it is characterised in that the semiconductor gain elements material is
(InGa)(AsP)/InP。
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109193342A (en) * | 2018-10-15 | 2019-01-11 | 中国科学院理化技术研究所 | Semiconductor laser |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104466672A (en) * | 2014-12-29 | 2015-03-25 | 中国科学院半导体研究所 | Laser device for modulating output light based on semiconductor laser device array |
| CN105552713B (en) * | 2016-02-24 | 2018-10-16 | 苏州大学 | Multi-wavelength outside cavity gas laser for unstressed configuration Raman spectrometer |
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| US6044096A (en) * | 1997-11-03 | 2000-03-28 | Sdl, Inc. | Packaged laser diode array system and method with reduced asymmetry |
| US6192062B1 (en) * | 1998-09-08 | 2001-02-20 | Massachusetts Institute Of Technology | Beam combining of diode laser array elements for high brightness and power |
| CN102025105A (en) * | 2009-09-09 | 2011-04-20 | 中国科学院半导体研究所 | Blazed grating outer cavity semiconductor laser device and collimation method thereof |
| CN102208753A (en) * | 2011-04-27 | 2011-10-05 | 苏州华必大激光有限公司 | External cavity semiconductor laser with multi-wavelength combination |
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Patent Citations (5)
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| US6044096A (en) * | 1997-11-03 | 2000-03-28 | Sdl, Inc. | Packaged laser diode array system and method with reduced asymmetry |
| US6192062B1 (en) * | 1998-09-08 | 2001-02-20 | Massachusetts Institute Of Technology | Beam combining of diode laser array elements for high brightness and power |
| CN102025105A (en) * | 2009-09-09 | 2011-04-20 | 中国科学院半导体研究所 | Blazed grating outer cavity semiconductor laser device and collimation method thereof |
| CN102208753A (en) * | 2011-04-27 | 2011-10-05 | 苏州华必大激光有限公司 | External cavity semiconductor laser with multi-wavelength combination |
| CN103227417A (en) * | 2013-04-09 | 2013-07-31 | 中国科学院半导体研究所 | Mode-locking outer cavity semiconductor laser |
Cited By (2)
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| CN109193342A (en) * | 2018-10-15 | 2019-01-11 | 中国科学院理化技术研究所 | Semiconductor laser |
| CN109193342B (en) * | 2018-10-15 | 2019-11-15 | 中国科学院理化技术研究所 | Semiconductor laser |
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Address after: 225500 Taizhou science and Technology Industrial Park, Jiangyan District, Jiangsu (east side of the South) Applicant after: China Semiconductor Technology Co., Ltd. Address before: 225500 Taizhou science and Technology Industrial Park, Jiangyan District, Jiangsu (east side of the South) Applicant before: BEIJING UNIVERSITY OF TECHNOLOGY |
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