CN103887707A - Semiconductor laser device with high-power and high-beam-quality lasers - Google Patents
Semiconductor laser device with high-power and high-beam-quality lasers Download PDFInfo
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Abstract
一种具有大功率高光束质量激光的半导体激光器，其在半导体增益元件外部搭建外谐振腔，外谐振腔内依次设置准直光学元件、光谱色散元件和耦合输出镜。半导体增益元件包含数个呈直线平行排列的有源增益区，在每个有源增益区的一侧镀有对激光波长高反射率的膜层，另一侧镀有对激光波长高透过率的膜层。准直光学元件位于半导体增益元件镀有高透过率膜层一侧的后方，其中心光轴方向与所述半导体光学增益元件发射出光束的中心光轴重合。光谱色散元件以一定角度放置于准直光学元件的后方。耦合输出镜沿光束传播方向位于所述光谱色散元件的后方。本发明改善了激光震荡的模式，在不影响激光光束质量的前提下有效地提高了激光器的输出功率。
A semiconductor laser with high-power and high-beam-quality lasers. An external resonant cavity is built outside the semiconductor gain element, and a collimating optical element, a spectral dispersion element, and a coupling output mirror are sequentially arranged in the external resonant cavity. The semiconductor gain element consists of several active gain regions arranged in parallel in a straight line. One side of each active gain region is coated with a film with high reflectivity to the laser wavelength, and the other side is coated with a film with high transmittance to the laser wavelength. film layer. The collimating optical element is located behind the side coated with a high-transmittance film layer of the semiconductor gain element, and its central optical axis coincides with the central optical axis of the light beam emitted by the semiconductor optical gain element. The spectral dispersing element is placed at an angle behind the collimating optics. The outcoupling mirror is located behind the spectral dispersion element along the beam propagation direction. The invention improves the mode of laser oscillation, and effectively increases the output power of the laser without affecting the quality of the laser beam.
Description
Technical field
The present invention relates to a kind of external-cavity semiconductor laser power expansion technology, more particularly, relate to a kind of semiconductor laser with high-power high light beam quality laser.
Background technology
Laser because its brightness is high, monochromaticjty is good, collimation and good condensing performance, be widely used in fields such as scientific research, military and national defense, industrial processes, astronomical observation and Information Communications.The beam quality of laser is to describe in laser propagation process, to focus on and the parameter of collimation capability, the laser of high light beam quality can obtain less hot spot, after collimation, can obtain less far-field divergence angle after focusing, therefore in actual applications, the laser of high light beam quality is the direction that people pursue always.But along with the increase of laser output power, can be exaggerated gradually factors such as thermal effect, thereby affect the beam quality of laser, therefore the beam quality of laser and power are the existence of opposition mutually always, in the time of development laser, must weigh the pros and cons of practical application, these two parameters are weighed.
Compared with the laser (as gas laser, solid state laser) of semiconductor laser and other types, there is electrical efficiency higher (non-fiber coupling loss or secondary pumping depletion), the advantages such as cost low (without the high high-power energy-transmission optic fibre of price), but its beam quality is along with the increase meeting severe exacerbation of laser output power, power output how effectively to expand semiconductor laser under the prerequisite that keeps beam quality is the focus of this area research always.
Semiconductor laser array (bar bar) technology is one semiconductor laser power expansion technology very easily, its principle is arranged in parallel within several semiconductor light emittings unit in substrate exactly, so that the power output of laser increases with luminescence unit number is linear, but because the corrugated, laser beam near field obtaining is in this way divided, therefore its beam quality is very poor, cannot effectively be applied to the technical field that coupling fiber and welding, cutting etc. need high light beam quality laser.Therefore, how, during in the power output of expansion semiconductor laser array, its beam quality of effective guarantee is a technical problem in the urgent need to address.
Summary of the invention
The deficiency existing for prior art, the object of the present invention is to provide one to utilize external-cavity semiconductor laser power expansion technology, obtains the semiconductor laser with high-power high light beam quality laser.
For achieving the above object, technical scheme of the present invention is: a kind of semiconductor laser with high-power high light beam quality laser, it builds exterior resonant cavity in semiconductor gain elements outside, in described exterior resonant cavity, set gradually collimation optics, spectral dispersion element and output coupling mirror, described semiconductor gain elements comprises several active gain districts that are linearly arranged in parallel, a side in each active gain district is coated with the rete to optical maser wavelength high reflectance, opposite side is coated with the rete to optical maser wavelength high permeability, described collimation optics is positioned at described semiconductor gain elements and is coated with the rear of high permeability rete one side, its center optical axis direction overlaps with the central optical axis that described semiconductor optical booster element is launched light beam, described spectral dispersion element is positioned over the rear of described collimation optics at a certain angle, described output coupling mirror is positioned at the rear of described spectral dispersion element along direction of beam propagation.
Described collimation optics is by being selected from least two kinds of set of lenses that form in post lens, microlens array or spherical lens.
The set of lenses that described collimation optics is made up of post lens and spherical lens, the light beam that described optical gain element is launched focuses on, and make the direction of propagation after focusing that each active gain district sends slightly different, but focal position is identical.
The set of lenses that described collimation optics is made up of post lens, microlens array and spherical lens, the beam collimation that described optical gain element is launched is directional light, by described spherical lens, light beam is focused on, and make the direction of propagation after beam collimation that each active gain district sends slightly different.
Described spectral dispersion element, is positioned over focal plane, the rear place of focusing optic at a certain angle, is a branch of light beam of propagating along optical axis direction by the light beam coupling of the different directions of propagation, all edges.Described spectral dispersion element preferred blazed grating.
Described output coupling mirror is selected level crossing or concave mirror, and minute surface is coated with the rete that is about 80% transmitance.
Described semiconductor gain elements material be (InGa) (AsP)/InP, its active gain district is shaped as cone barrel.
Compared with prior art, the present invention is by building exterior resonant cavity in semiconductor gain elements outside, to improve the pattern of laser concussion, and by entering spectral dispersion element in exterior resonant cavity interpolation, under the prerequisite that does not affect laser beam quality, effectively improve the power output of laser.Cause the laser of high light beam quality after focusing, can obtain less hot spot, after collimation, will obtain less far-field divergence angle, thereby can effectively be applied to the technical field that coupling fiber and welding, cutting etc. need high light beam quality laser, expand the range of application of semiconductor laser.
Accompanying drawing explanation
Fig. 1 is one embodiment of the present of invention, there is semiconductor laser structure and the light path schematic diagram of high-power high light beam quality laser, in figure the active gain district of semiconductor gain elements 1 only exemplary picture 5 (entirely not drawing), be intended to illustrate its arrangement and shape;
Fig. 2 is an alternative embodiment of the invention, there is semiconductor laser structure and the light path schematic diagram of high-power high light beam quality laser, in figure the active gain district of semiconductor gain elements 1 only exemplary picture 5 (entirely not drawing), be intended to illustrate its arrangement and shape.
Reference numeral in figure:
1,1'-semiconductor gain elements; 2,5-collimation optics; 2a-post lens;
2b, 5b-spherical lens; 3,3'-balzed grating; 4,4'-output coupling mirror;
5a-lenticule.
Embodiment
The present invention has the semiconductor laser of high-power high light beam quality laser, adopt in realizing beam shaping, the optocoupler of the each luminescence unit of semiconductor laser array is combined into the method for beam of laser output, greatly improve the beam quality of laser, solved existing beam shaping technology and can not change the characteristic that semiconductor laser array light beam space is isolated.
Semiconductor laser of the present invention comprises semiconductor gain elements, collimation optics, spectral dispersion element and output coupling mirror.According to the embodiment of the present invention, wherein said semiconductor gain elements 1,1' comprise several active gain district, and described several active gain district is linearly arranged in parallel, and under the excitation of impressed current, each active gain district can produce the laser gain of certain live width.One side in described active gain district is coated with the rete to optical maser wavelength high reflectance (reflectivity T>90%), and opposite side is coated with the rete to optical maser wavelength high permeability (reflectivity T<10%).Described collimation optics 2, 5 are positioned at described semiconductor optical booster element is coated with the rear of high permeability rete one side, its center optical axis direction and described report are put forward optical gain element and are launched the central optical axis of light beam and overlap, its effect is that the light beam that described optical gain element can be launched focuses on, make the direction of propagation after focusing that each active gain district sends slightly different, but focal position is identical, or the beam collimation that optical gain element can be launched is directional light, by spherical lens, light beam is focused on, and make the direction of propagation after beam collimation that each active gain district sends slightly different.Described spectral dispersion element, particularly balzed grating, 3,3', be positioned over the rear of collimation optics at a certain angle, and its effect is to be a branch of light beam of propagating along optical axis direction by the light beam coupling of the different directions of propagation, all edges.Described output coupling mirror 4,4' are positioned at the rear of described spectral dispersion element along direction of beam propagation, its effect is by the portion of energy projection output of light beam, portion of energy is reflected back whole laser system, thereby in the gain spectral range of described semiconductor gain elements 1,1', form multiple wavelength laser concussions.
embodiment mono-:
Fig. 1 illustrates that the embodiment of the present invention one has semiconductor laser structure and the light path of high-power high light beam quality laser.In the present embodiment, semiconductor gain media be (InGa) (AsP)/InP, in its semiconductor gain elements 1, comprise 19 active gain districts, the shape in each active gain district is cone barrel, to reduce the transverse mode of its Output of laser, thereby obtain better beam quality.Thereafter surface is coated with the high reflection film to 940nm ± 5nm, and its front surface is coated with the high permeability film to 940nm ± 5nm.Output coupling mirror 4' is the concave mirror that is coated with 80% transmitance rete, the light beam that active gain district sends is after post lens 2a and spherical lens 2b collimate to fast axle and slow axis respectively, focused on balzed grating, 3 by spherical lens 2b, after being reflected, light beam is coupled outgoing mirror 4 part transmission outputs, partial feedback concussion.If utilize 1 order diffraction of balzed grating, 3, its blaze angle θ s is determined by following formula:
The centre wavelength that wherein λ is Output of laser, the space periodic that d is grating, θ
0for the incident angle of laser, sin and arcsin are respectively sinusoidal and arcsine oeprator.
Because balzed grating, is slightly different to the laser reflectivity of different wave length, therefore also there is linear difference with the locus in each active gain district in laser concussion wavelength corresponding to each active gain district, and therefore final Laser output will form the spectral distribution of pectination.Whole system is equivalent to the space stack of 19 sub-laser systems, thus the effective power output of expanded laser light, and can not worsen its beam quality.
embodiment bis-:
Fig. 2 illustrates that the embodiment of the present invention two has semiconductor laser structure and the light path of high-power high light beam quality laser.In the present embodiment, semiconductor gain media be (InGa) (AsP)/InP, in its semiconductor gain elements 1', comprise 19 active gain districts, the shape in each active gain district is cone barrel, to reduce the transverse mode of its Output of laser, thereby obtain better beam quality.Thereafter surface is coated with the high reflection film to 940nm ± 5nm, and its front surface is coated with the high permeability film to 940nm ± 5nm.Output coupling mirror 4 is for being coated with the level crossing of 80% transmitance rete, the light beam that active gain district sends is after lenticule 5a collimation, focused on and be irradiated to balzed grating, 3' above by spherical lens 5b, after being reflected, be coupled outgoing mirror 4' part transmission output, partial feedback concussion.If utilize 1 order diffraction of balzed grating, 3', its blaze angle θ s is determined by following formula:
The centre wavelength that wherein λ is Output of laser, the space periodic that d is grating, the incident angle that θ 0 is laser, sin and arcsin are respectively sinusoidal and arcsine oeprator.
Because balzed grating, is slightly different to the laser reflectivity of different wave length, also there is linear difference with the locus of each gain region in laser concussion wavelength corresponding to each gain region therefore, and therefore final Laser output will form the spectral distribution of pectination.Whole system is equivalent to the space stack of 19 sub-laser systems, the therefore effective power output of expanded laser light, and can not worsen its beam quality.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (9)
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104466672A (en) * | 2014-12-29 | 2015-03-25 | 中国科学院半导体研究所 | Laser device for modulating output light based on semiconductor laser device array |
| CN105552713A (en) * | 2016-02-24 | 2016-05-04 | 苏州大学 | Multi-wavelength external cavity laser for non-fluorescence raman spectrometer |
| CN109193342A (en) * | 2018-10-15 | 2019-01-11 | 中国科学院理化技术研究所 | Semiconductor laser |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6044096A (en) * | 1997-11-03 | 2000-03-28 | Sdl, Inc. | Packaged laser diode array system and method with reduced asymmetry |
| US6192062B1 (en) * | 1998-09-08 | 2001-02-20 | Massachusetts Institute Of Technology | Beam combining of diode laser array elements for high brightness and power |
| CN102025105A (en) * | 2009-09-09 | 2011-04-20 | 中国科学院半导体研究所 | Blazed grating outer cavity semiconductor laser device and collimation method thereof |
| CN102208753A (en) * | 2011-04-27 | 2011-10-05 | 苏州华必大激光有限公司 | External cavity semiconductor laser with multi-wavelength combination |
| CN103227417A (en) * | 2013-04-09 | 2013-07-31 | 中国科学院半导体研究所 | Mode-locking outer cavity semiconductor laser |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6044096A (en) * | 1997-11-03 | 2000-03-28 | Sdl, Inc. | Packaged laser diode array system and method with reduced asymmetry |
| US6192062B1 (en) * | 1998-09-08 | 2001-02-20 | Massachusetts Institute Of Technology | Beam combining of diode laser array elements for high brightness and power |
| CN102025105A (en) * | 2009-09-09 | 2011-04-20 | 中国科学院半导体研究所 | Blazed grating outer cavity semiconductor laser device and collimation method thereof |
| CN102208753A (en) * | 2011-04-27 | 2011-10-05 | 苏州华必大激光有限公司 | External cavity semiconductor laser with multi-wavelength combination |
| CN103227417A (en) * | 2013-04-09 | 2013-07-31 | 中国科学院半导体研究所 | Mode-locking outer cavity semiconductor laser |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104466672A (en) * | 2014-12-29 | 2015-03-25 | 中国科学院半导体研究所 | Laser device for modulating output light based on semiconductor laser device array |
| CN105552713A (en) * | 2016-02-24 | 2016-05-04 | 苏州大学 | Multi-wavelength external cavity laser for non-fluorescence raman spectrometer |
| CN105552713B (en) * | 2016-02-24 | 2018-10-16 | 苏州大学 | Multi-wavelength outside cavity gas laser for unstressed configuration Raman spectrometer |
| CN109193342A (en) * | 2018-10-15 | 2019-01-11 | 中国科学院理化技术研究所 | Semiconductor laser |
| CN109193342B (en) * | 2018-10-15 | 2019-11-15 | 中国科学院理化技术研究所 | a semiconductor laser |
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Effective date of registration: 20160421 Address after: 225500 Taizhou science and Technology Industrial Park, Jiangyan District, Jiangsu (east side of the South) Applicant after: BEIJING UNIVERSITY OF TECHNOLOGY Address before: 100124 Chaoyang District, Beijing Ping Park, No. 100 Applicant before: Beijing University of Technology |
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Address after: 225500 Taizhou science and Technology Industrial Park, Jiangyan District, Jiangsu (east side of the South) Applicant after: China Semiconductor Technology Co., Ltd. Address before: 225500 Taizhou science and Technology Industrial Park, Jiangyan District, Jiangsu (east side of the South) Applicant before: BEIJING UNIVERSITY OF TECHNOLOGY |
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