CN103199439A - Semiconductor laser device - Google Patents
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- CN103199439A CN103199439A CN2013101013926A CN201310101392A CN103199439A CN 103199439 A CN103199439 A CN 103199439A CN 2013101013926 A CN2013101013926 A CN 2013101013926A CN 201310101392 A CN201310101392 A CN 201310101392A CN 103199439 A CN103199439 A CN 103199439A
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Abstract
The invention relates to the technical field of laser technology and provides a semiconductor laser device which comprises semiconductor laser arrays, fast axle collimating lenses, a varied lattice spacing diffraction grating and a reflecting mirror. The semiconductor laser arrays, the fast axle collimating lenses, the varied lattice spacing diffraction grating and the reflecting mirror are arranged in sequence along a light path. Each semiconductor laser array comprises at least two laser emitting units. Laser emitted from the laser emitting units is subjected to collimation of the fast axle collimating lenses and then is shot on the varied lattice spacing diffraction grating. The laser is subjected to diffraction of the varied lattice spacing diffraction grating to form parallel light, and then the parallel light is shot on the reflecting mirror with 1%-15% of reflectivity. The reflecting mirror is arranged perpendicular to the diffracted parallel light. The diffracted parallel light is subjected to transmission of the reflecting mirror to emit laser beams with ultrahigh brightness. The semiconductor laser device can be used for supplying the laser beams with ultrahigh brightness, and is integrally simple, stable and reliable.
Description
[technical field]
The present invention relates to laser technology field, particularly relate to a kind of semicondcutor laser unit.
[background technology]
Advantages such as high power semiconductor laser unit has the electro-optical efficiency height, volume is little, reliability is high and the life-span is long have extremely important using value at numerous areas such as industrial processes, biologic medical, national defence.Along with the development of semiconductor laser technique, the going out luminous power and can reach a kilowatt magnitude of single array semi-conductor laser (LDA, Laser Diode Array), electro-optical efficiency can reach more than 60%.Yet the waveguiding structure of semiconductor laser causes its beam quality bad, and the axial optical parameter of speed is actively unbalanced, and quick shaft direction is near diffraction limit, and the beam quality extreme difference of slow-axis direction has seriously restricted its range of application.At present general semiconductor laser array output beam is the 35-40 degree in the angle of divergence of quick shaft direction, is the 6-8 degree in the angle of divergence of slow-axis direction, and the spectrum peak half width when freely turning round is 2-4nm.
The brightness of laser is directly proportional with luminous power, and with square being inversely proportional to of beam parameter product, high-brightness laser can be focused into the hot spot of high power density under bigger Rayleigh length condition, improves quality and the efficient of materials processing.The semiconductor laser of high brightness can be directly used in the fields such as cutting, welding, cladding and punching of metal material, has expanded the range of application of semiconductor laser.And at present, the brightness of large-power semiconductor laser array is relatively low, hot spot after the focusing generally is used for nonmetallic melting welding and cuttings such as plastics, rubber, and metal surface modification and cladding etc. are to the less demanding occasion of power density, and also fewer to the exigent applications of power density in the deep penetration welding of metal, cutting, punching etc., its main cause is exactly that the brightness of laser beam is not high enough.
Therefore, how providing a kind of semicondcutor laser unit that can produce the high brightness laser light beam, is the technical problem that needs to be resolved hurrily at present.
[summary of the invention]
The invention provides a kind of semicondcutor laser unit, be intended to solve the not high enough problem of semicondcutor laser unit generation laser beam brightness in the prior art.
The present invention adopts following technical scheme:
A kind of semicondcutor laser unit, described laser aid comprise and setting gradually along light path:
Semiconductor laser array,
The fast axis collimation mirror,
Become the pitch diffraction grating,
Speculum;
Described semiconductor laser array comprises at least 2 lasing fluorescence unit, incide after the laser that described lasing fluorescence unit sends collimates through the fast axis collimation mirror and become the pitch diffraction grating, and after becoming pitch diffraction grating diffraction, form directional light and incide reflectivity and be the speculum of 1%-15%, described speculum is set to vertical with directional light behind the diffraction, and the directional light behind the diffraction transmits the high-brightness laser bundle through speculum.
Preferably, the laser center wavelength scope sent of described lasing fluorescence unit is 800nm---1000nm.
Preferably, described fast axis collimation mirror is close to the bright dipping side of described semiconductor laser array and is fixed, and is coated with anti-reflection film on the fast axis collimation mirror.
Preferably, described change pitch diffraction grating groove is 1000-1800 line/mm, and pitch is b
x, wherein said b
xBe the grating constant along slow-axis direction grating x place; The distance L that becomes pitch diffraction grating centre-to-centre spacing semiconductor laser array is 100-800mm; Adjacent lasing fluorescence unit differs the 1-4 milliradian to the incidence angle that becomes pitch diffraction grating same point, and described change pitch diffraction grating is transmission-type grating or reflection-type grating.
Preferably, the reflectivity of described speculum evenly distributes; The perhaps core reflectivity height of described speculum, the marginal portion reflectivity is low.
Preferably, the reflectivity of described speculum is the Gaussian function distribution in the one dimension direction.
Preferably, described change pitch diffraction grating and speculum are set to integrated optical element.
Preferably, described integrated optical element be shaped as triangular prism, the cross section of described triangular prism is triangle, the function of pitch diffraction grating is realized becoming in a side of triangular prism, the function of partially reflecting mirror is realized in the another side of triangular prism.
Preferably, described semiconductor laser array comprises 3 lasing fluorescence unit.
Preferably, described semicondcutor laser unit comprises 3 semiconductor laser arrays, form semiconductor laser heap by described 3 semiconductor laser arrays, each semiconductor laser array comprises 3 lasing fluorescence unit, the bright dipping side of each semiconductor laser array fixedly has a fast axis collimation mirror respectively, three beams is incident to change pitch diffraction grating and speculum from the light beam of different semiconductor laser arrays simultaneously behind fast axis collimation mirror collimation separately, transmit the high-brightness laser bundle.
Beneficial effect of the present invention is: constitute the exocoel feedback by becoming pitch diffraction grating and speculum, each sub-laser beam in the semiconductor laser array is carried out the exocoel frequency-selecting, control the wavelength gradient of each sub-laser beam, improve the outgoing beam quality of each sub-lasing fluorescence unit.Simultaneously, change pitch diffraction grating has chromatic dispersion and closes beam function, behind optical grating diffraction, and the parallel outgoing of each sub-laser beam.Whole device is simple, stable, reliable, can produce the semiconductor laser beam of super brightness.
[description of drawings]
Fig. 1 is single array semi-conductor laser aid structural representation that the embodiment of the invention 1 provides;
Fig. 2 is the structural representation that becomes the pitch diffraction grating among Fig. 1;
Fig. 3 is the structural representation that becomes pitch diffraction grating and mirror integralization in the embodiment of the invention 1;
Fig. 4 is the reflectivity Gaussian Profile schematic diagram of speculum in the embodiment of the invention 1;
Fig. 5 is many array semi-conductors laser aid structural representation that the embodiment of the invention 2 provides.
Description of reference numerals:
100: semiconductor laser array
101: the lasing fluorescence unit
200: the fast axis collimation mirror
300: become the pitch diffraction grating
400: speculum
10: the semiconductor laser heap
[embodiment]
In order to make purpose of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explaining the present invention, and be not used in restriction the present invention.
The embodiment of the invention provides a kind of semicondcutor laser unit, and described laser aid comprises and setting gradually along light path:
Semiconductor laser array,
The fast axis collimation mirror,
Become the pitch diffraction grating,
Speculum;
Described semiconductor laser array comprises at least 2 lasing fluorescence unit, incide after the laser that described lasing fluorescence unit sends collimates through the fast axis collimation mirror and become the pitch diffraction grating, and after becoming pitch diffraction grating diffraction, form directional light and incide reflectivity and be the speculum of 1%-15%, described speculum is set to vertical with directional light behind the diffraction, and the directional light behind the diffraction transmits the high-brightness laser bundle through speculum.
The embodiment of the invention constitutes the exocoel feedback by becoming pitch diffraction grating and speculum, and each sub-laser beam in the semiconductor laser array is carried out the exocoel frequency-selecting, controls the wavelength gradient of each sub-laser beam, improves the outgoing beam quality of each sub-lasing fluorescence unit.Simultaneously, change pitch diffraction grating has chromatic dispersion and closes beam function, behind optical grating diffraction, and the parallel outgoing of each sub-laser beam.Whole device is simple, stable, reliable, can produce the semiconductor laser beam of super brightness.
Embodiment 1
The embodiment of the invention 1 provides a kind of single array semi-conductor laser aid.
The method that improves semiconductor laser array brightness mainly contains coherent superposition and non-coherent addition two classes: the essence of coherent superposition is the stack of light wave amplitude, can improve the beam quality of semiconductor laser array output beam effectively, but the sub-light source Phase synchronization that need respectively superpose locking, technical difficulty is bigger, and is not easy to obtain the stable output of powerful homophase; Non-coherent addition is the stack of light intensity, and as methods such as beam shaping method, the polarization addition method and the wavelength additions method, but non-coherent addition is difficult to obtain the high-brightness laser light beam, and limited to the improvement of beam quality.The brightness of laser is directly proportional with luminous power, and with square being inversely proportional to of beam parameter product, so beam parameter product is reduced an order of magnitude, brightness will increase by two orders of magnitude.
If in the non-coherent addition class, improve the beam quality of sub-lasing fluorescence unit earlier, again the light beam with wavelength gradient is implemented the light intensity stack, just can obtain more high-brightness laser light beam.Utilize the exocoel feedback, can improve the beam quality of semiconductor laser, the sub-laser beam of each after the improvement superposes, and can obtain the stabilized lasers of high brightness.
The embodiment of the invention adopts exocoel and dispersion element, allow each lasing fluorescence unit difference resonance on different wavelength by the exocoel injection, and the centre wavelength of adjacent lasing fluorescence unit differs the gradient of a Δ λ in turn, the light that after the chromatic dispersion light splitting semiconductor laser array is sent is approximate abreast along a certain direction outgoing again, make the beam quality of entire semiconductor array be equal to the beam quality of single lasing fluorescence unit when exocoel injection locking, make gross power improve N doubly when improving sub-laser beam quality, wherein N is luminous the counting in the semiconductor laser array, also is the lasing fluorescence unit number in the semiconductor laser array.
Please refer to shown in Figure 1, the single array semi-conductor laser aid structural representation that provides for embodiment 1.This semicondcutor laser unit is single array, comprises the semiconductor laser array 100, fast axis collimation mirror 200, change pitch diffraction grating 300 and the speculum 400 that set gradually along light path.This semiconductor laser array 100 comprises at least 2 lasing fluorescence unit 101, is 3 lasing fluorescence unit 101 in the present embodiment.The laser center wavelength scope that the lasing fluorescence unit sends can be 800nm-1000nm, but is not limited thereto wave-length coverage.Preferably, can adopt and send the semiconductor laser array 100 that laser center wavelength is 976nm, but be not limited thereto wavelength.In the present embodiment, the luminous point of lasing fluorescence unit 101 is the 1x100um(micron), the fast axle angle of divergence is 35 degree, and the slow axis angle of divergence is 8 degree, and adjacent lasing fluorescence unit 101 spacings are 500um, and the power output of single laser array 100 is 50-80w.
In the present embodiment, the focal length of fast axis collimation mirror 200 is about 1.0mm, and numerical aperture is 0.5-0.8.Fast axis collimation mirror 200 is close to the bright dipping side of semiconductor laser array 100 and is fixed, and is coated with anti-reflection film on it, and near the light transmission rate the 976nm is greater than 99.5%.The light that semiconductor laser array 100 sends is behind fast axis collimation mirror 200 collimations, and the quick shaft direction angle of divergence is about several milliradians.
Please also refer to shown in Figure 2ly, be to become the structural representation of pitch diffraction grating 300.Become pitch diffraction grating 300 groove average out to 1000-1800 line/mm, transmission diffraction efficient is more than 90%, grid pitch changing grating density in the present embodiment
Wherein, b
xBe grating grating constant everywhere, α is the incidence angle of grating each point, and β is the angle of emergence of outgoing directional light, and λ is optical maser wavelength.Preferably, the distance L scope that becomes pitch diffraction grating 300 centre-to-centre spacing semiconductor laser arrays 100 is 100--800mm, but is not limited thereto distance range, and preferably, L is 200mm.The incidence angle that 101 pairs of adjacent lasing fluorescence unit become pitch diffraction grating 300 same points differs the 1-4 milliradian, for example is 2 milliradians.Make the wavelength gradient delta λ of adjacent lasing fluorescence unit 101 be about 0.5nm-2nm by the exocoel feedback.Become pitch diffraction grating 300 and be transmission-type grating or reflection-type grating.
The reflectivity of speculum 400 is evenly distributed, and reflectivity is 1%-15%.Certainly, speculum 400 also can be the reflectivity-variable speculum, and its reflectivity can be different on spatial distribution, and such as core reflectivity height, the marginal portion reflectivity is low, can effectively improve the angle of divergence of slow-axis direction.Certainly, also can allow reflectivity distribute in the one dimension direction and be Gaussian function or other forms, specifically please refer to shown in Figure 4, reflectivity Gaussian Profile schematic diagram for speculum 400, core reflectivity height, the gain that the light of the 101 slow axis central areas, sub-lasing fluorescence unit in the corresponding return laser light chamber obtains is more, can further compress the Energy distribution of slow axis beam.
The operation principle of the semicondcutor laser unit that the propagation path of laser optical path and present embodiment provide is: after the laser that lasing fluorescence unit 101 sends collimates through fast axis collimation mirror 200, the angle of divergence at quick shaft direction becomes very little, incide the hot spot that becomes on the pitch diffraction grating 300 and become a rectangle, its slow-axis direction is long, and quick shaft direction is short.The grating line that becomes pitch diffraction grating 300 is vertical with slow-axis direction, the light generation diffraction of slow-axis direction, and the light that same sub-lasing fluorescence unit 101 sends makes the diffraction light change of output be directional light owing to become the effect of pitch, and incides speculum 400.Owing to become the light focus point difference of 300 pairs of different incident wavelengths of pitch diffraction grating, therefore the two-beam of adjacent lasing fluorescence unit 101 outgoing becomes unidirectional directional light after having only certain wavelength gradient of maintenance could pass through change pitch diffraction grating 300 diffraction.Speculum 400 is vertical with directional light behind the diffraction, have only the light that returns through speculum 400 former roads just can enter in the semiconductor laser chamber, so the exocoel feedback has been selected the wavelength gradient of adjacent lasing fluorescence unit 101 automatically, also improved the outgoing beam quality of each sub-lasing fluorescence unit 101 simultaneously.Speculum 400 is the part reflection, and the light beam behind the penetration mirror 400 changes the laser beam of super brightness into.In the polishing shape process, through becoming the angle of divergence that pitch diffraction grating 300 and speculum 400 do not change elementary beam, band distributes sub-laser beam so the beam energy of outgoing is always at quick shaft direction, and distribution density is gradient slightly.The brightness of super brightness laser beam is generally greater than hundred megawatts/(cm
2.sr), the brightness of present commercial semiconductor laser light resource is all less than this value, maximum 60 megawatts/(cm
2.sr) about.
Preferably, become pitch diffraction grating and speculum and can be set to integrated optical element, please also refer to shown in Figure 3, for becoming the structural representation of pitch diffraction grating and mirror integralization, in the present embodiment, this integrated optical element is triangular prism, its cross section is triangle, certainly, leg-of-mutton shape there is no particular restriction, for example can be right-angled triangle.The function of pitch diffraction grating is realized becoming in one side of triangular prism, and the function of partially reflecting mirror is realized in the another side of triangular prism.When the cross section of triangular prism was right-angled triangle, the function of pitch diffraction grating was realized becoming in a side at triangle hypotenuse place, and the function of partially reflecting mirror is realized in a side at triangle one right-angle side place.Adopt integrated element, the adjustment of whole optical path is become very easy, and increased stability and the reliability of whole device.
The semicondcutor laser unit that the embodiment of the invention 1 provides, by becoming pitch diffraction grating 300 and speculum 400 formation exocoel feedbacks, each sub-laser beam in the semiconductor laser array 100 is carried out the exocoel frequency-selecting, control the wavelength gradient of each sub-laser beam, improve the outgoing beam quality of each sub-lasing fluorescence unit 101.Simultaneously, change pitch diffraction grating 300 has chromatic dispersion and closes beam function, behind optical grating diffraction, and the parallel outgoing of each sub-laser beam.By same change pitch diffraction grating 300, when improving sub-laser beam quality, the antithetical phrase laser beam realizes that wavelength is synthetic, and whole device is simple, stable, reliable, can produce the semiconductor laser beam of super brightness.
Embodiment 2
The embodiment of the invention 2 provides a kind of many array semi-conductors laser aid.
Please refer to shown in Figure 5, the many array semi-conductors laser aid structural representation that provides for the embodiment of the invention 2.The semiconductor laser heap of forming with 3 semiconductor laser arrays among the figure is the structure composition that example illustrates whole device, but the composition number of arrays of semicondcutor laser unit provided by the invention is not limited to 3, can be several, for example 2,4,5 or more, not enumerate one by one herein.The structure of single array and principle elaborate in embodiment 1, repeat no more herein.
Please refer to shown in Figure 5, this semicondcutor laser unit comprises 3 semiconductor laser arrays 100, form semiconductor laser heap 10 by these 3 semiconductor laser arrays 100, each semiconductor laser array 100 comprises 3 lasing fluorescence unit 101, the bright dipping side of each semiconductor laser array 100 fixedly has a fast axis collimation mirror 200 respectively, 3 fast axis collimation mirrors 200 collimate the fast axial light bundle of array separately, three beams is incident to change pitch diffraction grating 300 and speculum 400 from the light beam of different semiconductor laser arrays 100 simultaneously behind fast axis collimation mirror 200 collimations separately, the light beam of each semiconductor laser array 100 is all by the increase brightness that superposes voluntarily of the description among the embodiment 1, the light beam of different semiconductor laser arrays 100 then superposes by the space at quick shaft direction, output class is like dimensional energy distribution hot spot like the shutter, the device that the light beam of all semiconductor laser heap 10 outputs provides through present embodiment, the total beam quality in the synthetic back of light beam is equal to the quality that each exocoel injects the sub-laser beam in back, thereby transmits the laser beam of super brightness.If it is very little to focus on Focus Club with lens, Rayleigh length can be bigger, and this semicondcutor laser unit can be used for occasions such as Metal Cutting when satisfying certain brightness requirement, function that can part substituted for optical fibers laser.
The above only is preferred embodiment of the present invention, not in order to limiting the present invention, all any modifications of doing within the spirit and principles in the present invention, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a semicondcutor laser unit is characterized in that, described laser aid comprises and setting gradually along light path:
Semiconductor laser array,
The fast axis collimation mirror,
Become the pitch diffraction grating,
Speculum;
Described semiconductor laser array comprises at least 2 lasing fluorescence unit, incide after the laser that described lasing fluorescence unit sends collimates through the fast axis collimation mirror and become the pitch diffraction grating, and after becoming pitch diffraction grating diffraction, form directional light and incide reflectivity and be the speculum of 1%-15%, described speculum is set to vertical with directional light behind the diffraction, and the directional light behind the diffraction transmits the high-brightness laser bundle through speculum.
2. semicondcutor laser unit according to claim 1 is characterized in that, the laser center wavelength scope that described lasing fluorescence unit sends is 800nm-1000nm.
3. semicondcutor laser unit according to claim 1 is characterized in that, described fast axis collimation mirror is close to the bright dipping side of described semiconductor laser array and is fixed, and is coated with anti-reflection film on the fast axis collimation mirror.
4. semicondcutor laser unit according to claim 1 is characterized in that, described change pitch diffraction grating groove is 1000-1800 line/mm, and pitch is b
x, wherein said b
xBe the grating constant along slow-axis direction grating x place; The distance L that becomes pitch diffraction grating centre-to-centre spacing semiconductor laser array is 100-800mm; Adjacent lasing fluorescence unit differs the 1-4 milliradian to the incidence angle that becomes pitch diffraction grating same point, and described change pitch diffraction grating is transmission-type grating or reflection-type grating.
5. semicondcutor laser unit according to claim 1 is characterized in that, the reflectivity of described speculum evenly distributes; The perhaps core reflectivity height of described speculum, the marginal portion reflectivity is low.
6. semicondcutor laser unit according to claim 5 is characterized in that, the reflectivity of described speculum is Gaussian function in the one dimension direction and distributes.
7. semicondcutor laser unit according to claim 1 is characterized in that, described change pitch diffraction grating and speculum are set to integrated optical element.
8. semicondcutor laser unit according to claim 7, it is characterized in that, described integrated optical element be shaped as triangular prism, the cross section of described triangular prism is triangle, the function of pitch diffraction grating is realized becoming in one side of triangular prism, and the function of partially reflecting mirror is realized in the another side of triangular prism.
9. according to each described semicondcutor laser unit of claim 1～8, it is characterized in that described semiconductor laser array comprises 3 lasing fluorescence unit.
10. according to each described semicondcutor laser unit of claim 1～8, it is characterized in that, described semicondcutor laser unit comprises 3 semiconductor laser arrays, form semiconductor laser heap by described 3 semiconductor laser arrays, each semiconductor laser array comprises 3 lasing fluorescence unit, the bright dipping side of each semiconductor laser array fixedly has a fast axis collimation mirror respectively, three beams is incident to change pitch diffraction grating and speculum from the light beam of different semiconductor laser arrays simultaneously behind fast axis collimation mirror collimation separately, transmit the high-brightness laser bundle.
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| CN103904557A (en) * | 2014-03-25 | 2014-07-02 | 中国科学院半导体研究所 | Device and method for beam combination of laser devices |
| CN106941240A (en) * | 2017-05-18 | 2017-07-11 | 温州泛波激光有限公司 | Semiconductor laser |
| CN109149357A (en) * | 2017-06-28 | 2019-01-04 | 福州高意光学有限公司 | A kind of mode locking semiconductor laser |
| CN109491096A (en) * | 2018-12-24 | 2019-03-19 | 西安炬光科技股份有限公司 | Optical device, laser module and laser beam processing method |
| CN110658509A (en) * | 2018-06-28 | 2020-01-07 | 探维科技(北京)有限公司 | Laser radar system based on one-dimensional diffraction optical element DOE |
| WO2020037997A1 (en) * | 2018-08-21 | 2020-02-27 | 深圳市太赫兹科技创新研究院 | Installation and debugging apparatus and method for spectrometer |
| CN111180986A (en) * | 2020-01-09 | 2020-05-19 | 江苏师范大学 | Distributed feedback laser based on holographic polymer dispersed liquid crystal |
| CN114994933A (en) * | 2022-07-19 | 2022-09-02 | 中国科学院长春光学精密机械与物理研究所 | Spectrum beam combining device and method |
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| CN110658509A (en) * | 2018-06-28 | 2020-01-07 | 探维科技(北京)有限公司 | Laser radar system based on one-dimensional diffraction optical element DOE |
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| CN109491096B (en) * | 2018-12-24 | 2021-08-06 | 西安炬光科技股份有限公司 | Optical device, laser module and laser beam processing method |
| CN111180986A (en) * | 2020-01-09 | 2020-05-19 | 江苏师范大学 | Distributed feedback laser based on holographic polymer dispersed liquid crystal |
| CN114994933A (en) * | 2022-07-19 | 2022-09-02 | 中国科学院长春光学精密机械与物理研究所 | Spectrum beam combining device and method |
| CN114994933B (en) * | 2022-07-19 | 2022-10-21 | 中国科学院长春光学精密机械与物理研究所 | Spectrum beam combining device and method |
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