CN101170242A - An outside cavity high-power semiconductor laser alternating array power - Google Patents
An outside cavity high-power semiconductor laser alternating array power Download PDFInfo
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- CN101170242A CN101170242A CNA2007100559824A CN200710055982A CN101170242A CN 101170242 A CN101170242 A CN 101170242A CN A2007100559824 A CNA2007100559824 A CN A2007100559824A CN 200710055982 A CN200710055982 A CN 200710055982A CN 101170242 A CN101170242 A CN 101170242A
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Abstract
An array light source for a pericoel high-power semiconductor laser is provided, which utilizes a collimating mirror to conduct collimation to a fast axis, utilizes two convex-plane cylindrical mirrors to conduct collimation to a slow axis, the light of the collimated fast axis is divided into two roads for propagation, a cylindrical reflector and a raster are separately utilized to conduct feedback to the two roads of light, thereby realizing laser output of lightness and narrow line width of semiconductor laser array. The rectangular convex-plane cylindrical mirrors and the cylindrical reflector are relatively easy to be assembled with the semiconductor laser array. In addition, the laser output brightness can be adjusted through adjusting rectangular slit width, and the output laser power can be adjusted through rotating the half-wave plate.
Description
Technical field
The invention belongs to the high power semiconductor lasers field, relate to a kind of outside cavity high-power semiconductor laser alternating array power.
Background technology
The high power semiconductor lasers array is because compact conformation, the efficient height, and the life-span is long, is used widely in a lot of fields, as materials processing, laser marking, laser medicine, light-pumped solid state laser, spin exchanges optical pumping fields such as (SEOP).But because the big angle of divergence of semiconductor laser and wide spectral bandwidth are very limited its application.
Can improve the output beam quality of semiconductor laser by the exocoel feedback.Usually the external-cavity semiconductor laser of design is mostly at small-power single tube semiconductor laser [Opt.Lett.27,1995 (2002)].
The laser output of, high brightness high-power for semiconductor laser array, narrow linewidth has only laser diode array dual feedback external cavity laser (CN 1829015A) scheme.Use plano-concave lens in this scheme, because the disperse function of plano-concave lens, can not be with convergent beam a, c is parallel to be coupled on the grating; The light beam b that the biconvex spherical lens is downwards propagated diode laser matrix in this scheme in addition, d converges on the focus of spherical reflector simultaneously, noise spectra of semiconductor lasers is battle array repeatedly, for the laser beam that makes every layer of semiconductor laser alternating array all converges on the focus of spherical reflector through the biconvex spherical lens, (CN 1829015A) scheme as shown in Figure 6, need the size of the bore of biconvex spherical lens greater than semiconductor laser alternating array, inconvenient with the semiconductor laser alternating array assembling, be difficult for industrialization.
Summary of the invention
The problem to be solved in the present invention is to overcome above-mentioned the deficiencies in the prior art, utilize plano-convex cylindrical mirror 4 to replace the biconvex spherical lens, utilize cylinder reflector 5 to replace spherical reflector, Fig. 7 is the contrast of the light transmission path behind the present invention and (CN 1829015A) scheme.Semiconductor laser alternating array of the present invention like this and optical element are more easily assembled.In addition, regulate adjustable rectangular slot width and can regulate laser output brightness, the rotation half-wave plate can be regulated power output.
As shown in Figure 1: a kind of exocoel feedback semiconductor laser is being constructed as follows of battle array repeatedly: semiconductor laser alternating array 1, fast axis collimation mirror 3 and grating 9, described fast axis collimation mirror 3 is microtrabeculae lens or aspherical mirror, described grating 9 is the Littrow structure, it is characterized in that, described semiconductor laser alternating array 1 is to be laminated by a plurality of identical diode laser array 2, the quick shaft direction of each diode laser array 2 all is provided with fast axis collimation mirror 3, one plano-convex cylindrical mirror 4 is arranged behind the fast axis collimation mirror 3, and plano-convex cylindrical mirror 4 axis directions (being the y direction among Fig. 1) are vertical with the slow-axis direction (being the x direction among Fig. 1) of semiconductor laser alternating array 1; Be cylinder reflector 5 above after plano-convex cylindrical mirror 4, its below is rectangular slot 6 successively, half-wave plate 7, plano-convex cylindrical mirror 8 and grating 9; The road light a that described plano-convex cylindrical mirror 4 will upwards be propagated, b converges at the axis place of cylinder reflector 5, plano-convex cylindrical mirror 4 peaceful protruding cylindrical mirror 8 parallel confocal points are placed, rectangular slot 6 is placed on its focus place, half-wave plate 7 is positioned between its focus and the plano-convex cylindrical mirror 8, regulate rectangular slot 6 width and realize the transverse mode selection, carry out brightness regulation, the power of rotation half-wave plate 7 scalable feedback light and output light, light beam c, incide abreast on the grating 9 behind the d process plano-convex cylindrical mirror 8, wherein the single order diffraction light of grating 9 returns along former road feedback is provided, zeroth order diffraction light e, and f exports as laser, grating 9 feedbacks realize the longitudinal mode selection, press narrow linewidth;
As shown in Figure 3, described plano-convex cylindrical mirror 4 and cylinder reflector 5 constitute feedback cavity 10 upwards;
As shown in Figure 4, described plano-convex cylindrical mirror 4, rectangular slot 6, half-wave plate 7, plano-convex cylindrical mirror 8 and grating 9 constitute downward feedback cavity 11; Wherein plano-convex cylindrical mirror 4 peaceful protruding cylindrical mirrors 8 have formed a slow axis collimating optical system, and to one road light e of downward propagation, f collimates, parallel the inciding on the grating 9 in collimation back;
As shown in Figure 5, described semiconductor laser alternating array 1 rear end face, cylinder reflector 5, grating 9 form a resonant cavity 12, and resonant process laser propagation path is: semiconductor laser alternating array 1 rear end face → cylinder reflector 5 → semiconductor laser alternating array 1 rear end face → grating 9 → semiconductor laser alternating array 1 rear end face;
Described plano-convex cylindrical mirror 4 peaceful protruding cylindrical mirrors 8 are rectangle plano-convex cylindrical mirrors, and two plano-convex cylindrical mirror convex surfaces are relative;
Described adjustable slit 6 is rectangular slot, and slit length is fixed, and equates that with laser height (being the length of y direction among the figure) slit width (being the length of x direction among the figure) is adjustable, is used for selecting the transverse mode of semiconductor laser alternating array 1;
Described grating 9 is the copper substrate holographic grating, can add water-cooled or air cooling equipment behind substrate when laser power is very big, in case grating is cracked;
Described fast axis collimation mirror 3, plano-convex cylindrical mirror 4, half-wave plate 7 peaceful protruding cylindrical mirrors 8 are coated with the anti-reflection film of operation wavelength, and cylinder reflector 5 and grating 9 are coated with the anti-film of increasing of operation wavelength.
The course of work of the present invention:
The light that each diode laser array 2 sends in the semiconductor laser alternating array 1 carries out fast axis collimation through fast axis collimation mirror 3 separately.Light a behind the fast axis collimation, b, c, d is approximately directional light at quick shaft direction (being the y direction among Fig. 1).Light a behind fast axis collimation, b, c, d divide two-way to propagate, the road light a that makes progress and propagate, b has formed last far field lobe, the downward road light c that propagates, and d forms down the far field lobe, the road light a that described plano-convex cylindrical mirror 4 will upwards be propagated, b converges to the axis place of cylinder reflector 5, returned along former road by face of cylinder reflection, and injection semiconductor laser alternating array 1 is exaggerated; Described plano-convex cylindrical mirror 4 peaceful protruding cylindrical mirrors 8 have formed a slow axis collimating optical system, road light c to downward propagation, d collimates, incide after light is collimated on the grating 9, the single order diffraction light of grating 9 returns along former road feedback is provided, the zero order diffracted light e of grating 9, f exports as laser.Semiconductor laser alternating array 1 like this, and cylinder reflector 5 and grating 9 form a resonant cavity 12.The path of the laser propagation of its resonant process is: semiconductor laser alternating array 1 rear end face → cylinder reflector 5 → semiconductor laser alternating array 1 rear end face → grating 9 → semiconductor laser alternating array 1 rear end face.
Regulating the width of rectangular slot 6 can select specific laser transverse mode to feed back, thereby carry out brightness regulation, because the diffraction efficiency difference of the polarised light of 9 pairs of different directions of grating, so rotation half-wave plate 7 scalable semiconductor laser alternating arrays 1 output polarisation of light direction, thereby feedback light power and Output optical power are regulated.
Beneficial effect of the present invention:
In the invention since fast axis collimation mirror 2 only fast axle is collimated, and plano-convex cylindrical mirror 4 peaceful protruding cylindrical mirrors 8 only collimate to slow axis, the fast and slow axis collimation is independent of each other, axis direction (being the y direction among Fig. 1) length for 1 corresponding change plano-convex of need of semiconductor laser alternating array cylindrical mirror 4, plano-convex cylindrical mirror 8 and the cylinder reflector 5 of the different numbers of plies, easy to use, and can to make plano-convex cylindrical mirror 4 sizes and semiconductor laser alternating array 1 all be rectangle, is convenient to encapsulation.In addition, can regulate laser brightness, can regulate the output laser power by the rotation half-wave plate by regulating the rectangular slot width.
Description of drawings
Fig. 1 is a three-layer semiconductor laser alternating array outer-cavity structure schematic diagram.1 semiconductor laser alternating array, 2 diode laser array, 3 fast axis collimation mirrors, 4 plano-convex cylindrical mirrors, 5 cylinder reflector, 6 rectangular slot, 7 half-wave plates, 8 plano-convex cylindrical mirrors, 9 gratings.
This figure also is the accompanying drawing of specification digest
Fig. 2 is five layers of semiconductor laser alternating array outer-cavity structure schematic diagram.1 semiconductor laser alternating array, 2 diode laser array, 3 fast axis collimation mirrors, 4 plano-convex cylindrical mirrors, 5 cylinder reflector, 6 rectangular slot, 7 half-wave plates, 8 plano-convex cylindrical mirrors, 9 gratings.
Fig. 3 is the structural representation that plano-convex cylindrical mirror 4 and cylinder reflector 5 constitute feedback cavity 10 upwards.
Fig. 4 is a plano-convex cylindrical mirror 4, rectangular slot 6, and half-wave plate 7, plano-convex cylindrical mirror 8 and grating 9 constitute the structural representation of downward feedback cavity 11.
Fig. 5 is the structural representation of semiconductor laser alternating array 1 rear end face, cylinder reflector 5, grating 9 formation one resonant cavity 12.
Fig. 6 is the biconvex spherical lens of (CN 1829015A) scheme and the contrast schematic diagram of semiconductor laser array size.
Fig. 7 is the contrast of light transmission of the present invention path and (CN 1829015A) scheme.
Embodiment
The present invention is further described below in conjunction with drawings and Examples.
With reference to accompanying drawing 1, semiconductor laser alternating array 1 is laminated by 3 diode laser array 2, interlamellar spacing is 5mm, the y direction is long to be 1.2cm, the x direction is long to be 1.2cm, emission wavelength is 808nm, and the quick shaft direction of each diode laser array 2 (being the y direction among Fig. 1) all is provided with fast axis collimation mirror 3 separately, and fast axle is collimated.Fast axis collimation mirror 3 is the microtrabeculae lens, the laser a behind the fast axis collimation, and b, c, d is approximately directional light at quick shaft direction, and slow-axis direction (being the x direction among Fig. 1) is divided into two-way.The road light a that makes progress and propagate, b has formed last far field lobe; The downward road light c that propagates, d forms down the far field lobe.Last light path a, b and following light path c, d before inciding the fast axis collimation mirror with the angle of optical axis (being the z direction among Fig. 1) were:
The angle of departure of this moment is the optimum angle of departure, can get optimum efficiency along this direction feedback, wherein D is the full aperture of each luminescence unit, m is the mode step number, m=N ± 1, N is that (diode laser array comprises many luminescence units, and luminescence unit is generally 1um at quick shaft direction for the number of luminescence unit in the diode laser array 2, be generally 50um～200um at slow-axis direction, the luminescence unit spacing is generally 200um～500um).
Fast axis collimation mirror 3 backs are plano-convex cylindrical mirror 4, its axis direction (being the y direction among Fig. 1) is vertical with the slow-axis direction (being the x direction among Fig. 1) of diode laser array 2, be cylinder reflector 5 above after described plano-convex cylindrical mirror 4, constitute upwards propagates light a, the directional light a that the feedback cavity of b, plano-convex cylindrical mirror 4 will upwards be propagated, b converge at the axis place of cylinder reflector 5, returned along former road by face of cylinder reflection, and injection semiconductor laser alternating array 1 is exaggerated.Below after the plano-convex cylindrical mirror 4 is rectangular slot 6 successively, half-wave plate 7, plano-convex cylindrical mirror 8 and grating 9, constitute the light c that propagates downwards, the feedback cavity of d, described plano-convex cylindrical mirror 4 peaceful protruding cylindrical mirrors 8 have formed a slow axis collimating optical system, and to one road light c of downward propagation, d collimates, parallel the inciding on the grating 9 in collimation back, grating 9 is 2400 lines/mm copper substrate holographic grating, uses the Littrow structure, and the single order diffraction light of grating 9 returns along former road feedback is provided, the zero order diffracted light e of grating 9, f exports as laser, and grating 9 feedbacks realize the longitudinal mode selection, press narrow linewidth.Adjust cylinder reflector 5 and grating 9, make cylinder reflector 5 separately feedback far field single-lobe that obtains and the single-lobe output that 9 pairs of feedbacks of grating obtain coincide semiconductor laser alternating array 1 rear end face like this, cylinder reflector 5 and grating 9 formation one resonant cavity that resonates.The path of the laser propagation of its resonant process is: semiconductor laser alternating array 1 rear end face → cylinder reflector 5 → semiconductor laser alternating array 1 rear end face → grating 9 → semiconductor laser alternating array 1 rear end face.Regulate the width of slit 6 and can select specific transverse mode to feed back, thereby carry out brightness regulation.Rotation half-wave plate 7 is regulated the power of semiconductor laser alternating array 1 output polarisation of light direction scalable feedback light and output light.
The y direction length of plano-convex cylindrical mirror 4 is 1.2cm, x direction length is 1.2cm, be convenient to and semiconductor laser alternating array 1 encapsulation, the length of plano-convex cylindrical mirror 8 and cylinder reflector 5 axis directions (y direction among Fig. 1) and the length of rectangular slot 6 (y direction length among Fig. 1) are 1.2cm, are convenient to overall package.In addition, fast axis collimation mirror 3, plano-convex cylindrical mirror 4, half-wave plate 7 peaceful protruding cylindrical mirrors 8 are coated with the anti-reflection film of wavelength 808nm, and cylinder reflector 5, grating 9 are coated with the anti-film of increasing of wavelength 808nm.
With reference to accompanying drawing 2, semiconductor laser alternating array 1 is laminated by 5 diode laser array 2, interlamellar spacing is 4mm, the y direction is long to be 2.0cm, the x direction is long to be 1.2cm, emission wavelength is 980nm, and the quick shaft direction of diode laser array 2 (being the y direction among Fig. 2) all is provided with fast axis collimation mirror 3 separately, and fast axle is collimated.Fast axis collimation mirror 3 is a non-spherical lens, the laser a behind the fast axis collimation, and b, c, d is approximately directional light at quick shaft direction, and slow-axis direction (being the x direction among Fig. 2) is divided into two-way.The road light a that makes progress and propagate, b has formed last far field lobe; The downward road light c that propagates, d forms down the far field lobe.Last light path a, b and following light path c, d before inciding the fast axis collimation mirror with the angle of optical axis (being the z direction among Fig. 2) were:
The angle of departure of this moment is the optimum angle of departure, can get optimum efficiency along this direction feedback, wherein D is the full aperture of each luminescence unit, m is the mode step number, m=N ± 1, N is that (diode laser array comprises many luminescence units, and luminescence unit is generally 1um at quick shaft direction for the number of luminescence unit in the diode laser array 2, be generally 50um～200um at slow-axis direction, the luminescence unit spacing is generally 200um～500um).
Fast axis collimation mirror 3 backs are plano-convex cylindrical mirror 4, its axis direction (being the y direction among Fig. 2) is vertical with the slow-axis direction (being the x direction among Fig. 2) of diode laser array 2, be cylindrical mirror 5 above after described plano-convex cylindrical mirror 4, constitute upwards propagates light a, the feedback cavity of b, the directional light that plano-convex cylindrical mirror 4 will upwards be propagated converges at the axis place of cylinder reflector 5, returned along former road by face of cylinder reflection, and injection semiconductor laser alternating array 1 is exaggerated.Below after the plano-convex cylindrical mirror 4 is a rectangular slot 6, half-wave plate 7, plano-convex cylindrical mirror 8 and grating 9, constitute the light c that propagates downwards, the feedback cavity of d, described plano-convex cylindrical mirror 4 peaceful protruding cylindrical mirrors 8 have formed a slow axis collimating optical system, and to one road light c of downward propagation, d collimates, incide after light is collimated on the grating 9, grating 9 is 1800 lines/mm copper substrate holographic grating, uses the Littrow structure, and the single order diffraction light of grating 9 returns along former road feedback is provided, the zero order diffracted light e of grating 9, f exports as laser, and grating 9 feedbacks realize the longitudinal mode selection, press narrow linewidth.Adjust cylinder reflector 5 and grating 9, make cylinder reflector 5 separately the single-lobe that obtains of the far field single-lobe that obtains of feedback and 9 pairs of feedbacks of grating export and coincide.Semiconductor laser alternating array 1 like this, and cylinder reflector 5 and grating 9 form a resonance resonant cavity.The path of the laser propagation of its resonant process is: semiconductor laser alternating array 1 rear end face → cylinder reflector 5 → semiconductor laser alternating array 1 rear end face → grating 9 → semiconductor laser alternating array 1 rear end face.Regulate the width of slit 6 and can select certain transverse mode to feed back, thereby carry out brightness regulation; Rotation half-wave plate 7 is regulated the power of semiconductor laser alternating array 1 output polarisation of light direction scalable feedback light and output light.
The y direction length of plano-convex cylindrical mirror 4 is 2.0cm, x direction length is 1.2cm, be convenient to and semiconductor laser alternating array 1 encapsulation, the length of plano-convex cylindrical mirror 8 and cylinder reflector 5 axis directions (y direction among Fig. 2) and the length of rectangular slot 6 (y direction length among Fig. 2) are 2.0cm, are convenient to overall package.In addition, fast axis collimation mirror 3, plano-convex cylindrical mirror 4, half-wave plate 7 peaceful protruding cylindrical mirrors 8 are coated with the anti-reflection film of wavelength 808nm, and cylinder reflector 5, grating 9 are coated with the anti-film of increasing of wavelength 808nm.
By example 1 and example 2 as can be known, for differing heights (the different numbers of plies of y direction, different spacing) semiconductor laser alternating array, only need the corresponding plano-convex cylindrical mirror 4 that changes in the used exocoel system, the length of the y direction of cylinder reflector 5 and rectangular slot 6 gets final product, other parameter need not change, and uses fairly simple.
Claims (6)
1. outside cavity high-power semiconductor laser alternating array power, it is constructed as follows: semiconductor laser alternating array (1), fast axis collimation mirror (3) and grating (9), described fast axis collimation mirror (3) is microtrabeculae lens or aspherical mirror, described grating (9) is the Littrow structure, it is characterized in that, described semiconductor laser alternating array (1) is to be laminated by a plurality of identical diode laser array (2), and the quick shaft direction of each diode laser array (2) all is provided with fast axis collimation mirror (3); One plano-convex cylindrical mirror (4) is arranged behind the fast axis collimation mirror (3), plano-convex cylindrical mirror (4) axis direction is vertical with diode laser array (2) slow-axis direction, in plano-convex cylindrical mirror (4) top afterwards is cylinder reflector (5), its below is rectangular slot (6) successively, half-wave plate (7), plano-convex cylindrical mirror (8) and grating (9); The road light a that described plano-convex cylindrical mirror (4) will upwards be propagated, b converges at the axis place of cylinder reflector (5), the parallel confocal point of the peaceful protruding cylindrical mirror of plano-convex cylindrical mirror (4) (8) is placed, two plano-convex cylindrical mirror convex surfaces are relative, rectangular slot (6) is placed on its focus place, half-wave plate (7) is positioned between its focus and the plano-convex cylindrical mirror (8), light beam c, incide abreast on the grating (9) behind the d process plano-convex cylindrical mirror (8), wherein the single order diffraction light of grating (9) returns along former road feedback is provided, zeroth order diffraction light e, and f exports as laser, grating (9) feedback realizes the longitudinal mode selection, presses narrow linewidth;
Described plano-convex cylindrical mirror (4) and cylinder reflector (5) constitute feedback cavity (10) upwards;
Described plano-convex cylindrical mirror (4), rectangular slot (6), half-wave plate (7), plano-convex cylindrical mirror (8) and grating (9) constitute downward feedback cavity (11); Wherein the peaceful protruding cylindrical mirror of plano-convex cylindrical mirror (4) (8) has formed a slow axis collimating optical system, and to one road light e of downward propagation, f collimates, parallel the inciding on the grating (9) in collimation back;
Described semiconductor laser alternating array (1) rear end face, cylinder reflector (5), grating (9) form a resonant cavity (12).
2. a kind of outside cavity high-power semiconductor laser alternating array power according to claim 1 is characterized in that described grating (9) is the copper substrate holographic grating.
3. a kind of outside cavity high-power semiconductor laser alternating array power according to claim 1 is characterized in that the peaceful protruding cylindrical mirror of described plano-convex cylindrical mirror (4) (8) is a rectangle plano-convex cylindrical mirror, and two plano-convex cylindrical mirror convex surfaces are relative.
4. a kind of outside cavity high-power semiconductor laser alternating array power according to claim 1, it is characterized in that described adjustable slit (6) is a rectangular slot, slit length is fixed, highly equate with semiconductor laser alternating array (1), slit width is adjustable, is used for selecting the transverse mode of semiconductor laser alternating array (1).
5. a kind of outside cavity high-power semiconductor laser alternating array power according to claim 1 is characterized in that described fast axis collimation mirror (3), plano-convex cylindrical mirror (4), the peaceful protruding cylindrical mirror of half-wave plate (7) (8) are coated with the anti-reflection film of operation wavelength.
6. a kind of outside cavity high-power semiconductor laser alternating array power according to claim 1 is characterized in that described cylinder reflector (5) and grating (9) are coated with the anti-film of increasing of operation wavelength.
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| CNA2007100559824A CN101170242A (en) | 2007-08-21 | 2007-08-21 | An outside cavity high-power semiconductor laser alternating array power |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103199439A (en) * | 2013-03-26 | 2013-07-10 | 温州泛波激光有限公司 | Semiconductor laser device |
| WO2017067068A1 (en) * | 2015-10-23 | 2017-04-27 | 武汉电信器件有限公司 | Wavelength division multiplexing/de-multiplexing optical transceiver assembly based on diffraction grating |
| CN107346062A (en) * | 2017-08-04 | 2017-11-14 | 大连理工大学 | A kind of method of diode laser light beam collimation |
| CN110137805A (en) * | 2019-04-16 | 2019-08-16 | 深圳市速腾聚创科技有限公司 | The fast axis collimation structure and laser radar of semiconductor laser array |
| CN110459957A (en) * | 2019-07-03 | 2019-11-15 | 彭鸿琦 | A kind of homojunction on piece integrated semiconductor laser structure of resonant cavity transverse and longitudinal mould |
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2007
- 2007-08-21 CN CNA2007100559824A patent/CN101170242A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103199439A (en) * | 2013-03-26 | 2013-07-10 | 温州泛波激光有限公司 | Semiconductor laser device |
| CN103199439B (en) * | 2013-03-26 | 2015-06-10 | 温州泛波激光有限公司 | Semiconductor laser device |
| WO2017067068A1 (en) * | 2015-10-23 | 2017-04-27 | 武汉电信器件有限公司 | Wavelength division multiplexing/de-multiplexing optical transceiver assembly based on diffraction grating |
| US10451805B2 (en) | 2015-10-23 | 2019-10-22 | Wuhan Telecommunication Devices Co., Ltd | Wavelength division multiplexing/demultiplexing optical transceiving assembly based on diffraction grating |
| CN107346062A (en) * | 2017-08-04 | 2017-11-14 | 大连理工大学 | A kind of method of diode laser light beam collimation |
| CN110137805A (en) * | 2019-04-16 | 2019-08-16 | 深圳市速腾聚创科技有限公司 | The fast axis collimation structure and laser radar of semiconductor laser array |
| CN110137805B (en) * | 2019-04-16 | 2021-07-02 | 深圳市速腾聚创科技有限公司 | Fast axis collimation structure of semiconductor laser array and laser radar |
| CN110459957A (en) * | 2019-07-03 | 2019-11-15 | 彭鸿琦 | A kind of homojunction on piece integrated semiconductor laser structure of resonant cavity transverse and longitudinal mould |
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