CN102868089B - Device and method of using single-grating external cavity feedback to realize beam combination of multiple semiconductor lasers - Google Patents
Device and method of using single-grating external cavity feedback to realize beam combination of multiple semiconductor lasers Download PDFInfo
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- CN102868089B CN102868089B CN201210361979.6A CN201210361979A CN102868089B CN 102868089 B CN102868089 B CN 102868089B CN 201210361979 A CN201210361979 A CN 201210361979A CN 102868089 B CN102868089 B CN 102868089B
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Abstract
The invention relates to a device and a method of using single-grating external cavity feedback to realize beam combination of multiple semiconductor lasers and belongs to the technical field of semiconductor lasers. Semiconductor laser modules and external cavity anti-peep mirrors form two laser oscillation cavities respectively, and two linear polarization laser beams which are identical to a unit beam in quality and multiplied in power are outputted from the external cavity anti-peep mirrors via common grating angular dispersion effect and feedback effect of the external cavity anti-peep mirrors to realize high-power and high-beam-quality single laser beam output through polarization beam combination mirrors. The device and the method of using single-grating external cavity feedback to realize beam combination of multiple semiconductor lasers can realize beam combination within a full semiconductor laser waveband range and narrow beam combination wavelength intervals, and have the advantages of high output laser power and high beam quality, and the integration level is high as multi-beam spectrum combination is realized by one grating.
Description
Technical field
The invention belongs to semiconductor laser technique field, relate in particular to the single grating of a kind of employing, by exocoel, feed back, realize a plurality of semiconductor laser elements and close and restraint into two-beam, then realize in conjunction with the utilization list grating external-cavity feedback that polarization coupling is realized super brightness, the output of high power single laser beam the device and method that multiple semiconductor swashs combiner.
Background technology
Semiconductor laser has that conversion efficiency is high, long service life, volume is little and the advantage such as lightweight, as direct light source, low-power device is realized extensive use at message areas such as communication, printing, bar code scanning and optical storages already, high power device is subject to the restriction of beam quality and brightness conditions, and the power density that arrives target place is low, only be applied at present some low occasions that require, as Plastic Welding, laser braze welding etc.For the field of having relatively high expectations as metal solder, laser cutting etc., the application of semiconductor laser still acquires a certain degree of difficulty, improve the beam quality of semiconductor laser, improve the brightness of outgoing laser beam, to the development of high power semiconductor lasers with apply significant.
The beam quality of semiconductor laser adopts optical parameter long-pending (BPP) to evaluate, and is defined as Beam waist radius w
0with the product of far field divergence half angle θ/2, optical parameter is long-pending less, and beam quality is better.
BPP=?w
0*θ/2
Due to the reasons in structure of semiconductor laser, be parallel to the long-pending (BPP of quick shaft direction optical parameter of epitaxial loayer direction
f) little, approaching diffraction limit, beam quality is very good, perpendicular to the slow-axis direction optical parameter of epitaxial loayer direction, amasss as quick shaft direction (BPP
s) thousands of times, beam quality is poor, is unfavorable for the practical application of semiconductor laser.
The brightness of semiconductor laser (B) adopts the power output in unit are unit solid angle to evaluate:
B=P/(π
2*BPP
f*BPP
s)
Conventional method of geometrical optics, the mode of being cut, being reset by light beam, reduces the BPP value of slow-axis direction, and the BPP value of quick shaft direction increases, and realizes both direction BPP value and equates, makes diagonal BPP value minimum.But the BPP value product of its two direction does not reduce, so the brightness of semiconductor laser does not improve in fact.
Adopt polarization coupling and wavelength to close bundle and can improve to a certain extent the brightness of semiconductor laser Output of laser, but because polarization coupling can only improve 2 times, and wavelength closes the number of wavelengths that bundle can be coupled and is subject to plated film restriction, close bundle quantity and be generally no more than 5, the multiple that therefore can improve brightness is no more than 10 times.
By exocoel, feed back and realize spectrum and close bundle, can effectively improve the brightness of semiconductor laser, it is not increasing under the BPP value condition of quick shaft direction, reduce slow-axis direction BPP value, the method is at US Patent No. 7065107B2, US6192062B1, US6208679 and notification number are CN102208753A, it is all on the books that name is called the domestic patent of " external cavity semiconductor laser with multi-wavelength combination ", but these spectrum close Shu Fangfa all for single laser array or array, or grating is corresponding with single semiconductor laser module, the grating utilance involving great expense is low, or the semiconductor laser that forms laser module is commaterial type, the laser cell number of beams that can be coupled is limited, when requiring high occasion at power requirement and beam quality, can not meet instructions for use.In addition, adopt a plurality of semiconductor laser array spectrum to close bundle, corresponding need adopts a plurality of gratings, makes the cost of whole system high, and a plurality of mutual incoherent light paths also make level of integrated system low.
The problem of above-mentioned existence need to be further improved.
Summary of the invention
In order to realize super brightness, high-power semiconductor laser output, the invention provides a kind of single grating external-cavity feedback of utilizing and realize the device and method that multiple semiconductor swashs combiner, solve existing spectrum and close Shu Fangfa all for single laser array or array, or grating is corresponding with single semiconductor laser module, the grating utilance involving great expense is low; Or the semiconductor laser that forms laser module is commaterial type, and the laser cell number of beams that can be coupled is limited, and can not meet instructions for use; And adopt a plurality of semiconductor laser array spectrum to close bundle, and corresponding need adopts a plurality of gratings, makes the cost of whole system high, and a plurality of mutual incoherent light paths also make the problem that level of integrated system is low.
The present invention has specifically proposed the single grating of a kind of employing, by exocoel, feed back, realizing a plurality of semiconductor lasers closes and restraints into two-beam, the utilization list grating external-cavity feedback that realizes the output of super brightness, high power single laser beam in conjunction with polarization coupling again realizes the device and method that multiple semiconductor swashs combiner, the related device of the method comprises: semiconductor laser module, field lens, grating, the anti-sight glass of exocoel, half-wave plate, speculum group, polarization splitting prism, the anti-sight glass of its semiconductor laser module and exocoel forms respectively two laser oscillation cavities, wherein:
Semiconductor laser module is comprised of semiconductor laser, fast axis collimation mirror and slow axis collimating mirror;
Unit light beam incides the direction of vibration of grating and polarization direction that grating requires matches;
The position relationship of semiconductor laser module, field lens and grating meets: semiconductor laser module and grating lay respectively at the place, focal plane, front and back of field lens;
Forming semiconductor laser module semiconductor laser is wherein a plurality of laser single tubes (emitter) combinations, or is laser array (bar), or the laser linear array being comprised of laser array or the battle array that changes, or a plurality of laser linear array or the repeatedly combination of battle array;
Form semiconductor laser module, the chamber facial mask reflectivity <0.5% of semiconductor laser Output of laser one end wherein, the chamber facial mask reflectivity >95% of the other end, the degree of polarization >95% of this semiconductor laser outgoing laser beam;
The material gain wavelength of semiconductor laser covers all energy of semiconductor laser excitation wavelength, comprises that, from ultraviolet to infrared, its arrangement mode closes Shu Fangxiang monotone variation along spectrum; When semiconductor laser is a plurality of laser cell combination, laser cell material is identical or different each other.
Grating is transmission or reflective, only there is 1 order diffraction or only has-1 order diffraction, and diffraction efficiency >90%, and there is high damage threshold, reach 10KW/cm
2magnitude;
The anti-sight glass of exocoel is partially reflecting mirror, and reflectivity is 5%-15%, and the transmission direction of the diffraction light producing with grating is vertical;
Half-wave plate and polarization splitting prism are wide wavestrip element, and it uses spectral region to be greater than the spectral width of exocoel feedback mirrors outgoing laser beam, and has high damage threshold, requires, under laser continuous operation mode, to be greater than 10KW/cm
2.
A kind of single grating external-cavity feedback of utilizing realizes the method that multiple semiconductor swashs combiner: adopt single grating, by exocoel, feed back, realizing a plurality of semiconductor lasers closes and restraints into two-beam, the semiconductor laser of realizing the output of super brightness, high power single laser beam in conjunction with polarization coupling again closes bundle, is specially:
A, two identical semiconductor laser module symmetries are placed on grating normal OP both sides, if each laser module is exported respectively 3 bunch polarization unit light beams, after field lens effect, unit light beam incides on grating with the angle of monotone variation, and overlaps at grating;
B, by the angle dispersion of grating and the feedback effect of the anti-sight glass of exocoel, make the wavelength X of the unit laser beam of starting of oscillation
1, λ
2, λ
3different, and close Shu Fangxiang monotone variation along spectrum, so export from the anti-sight glass of exocoel, two light beams quality is identical with unit light beam, spectrum consistent, power improves the linearly polarized laser bundle of 3 times, wherein light beam, through 90 ° of half-wave plate effect after vibration direction upsets, is realized polarization coupling with the light beam of process speculum group effect by polarization splitting prism;
C, the method can expand to closes Shu Fangxiang at spectrum and adopts more multiple semiconductor laser module, these semiconductor laser modules close on Shu Fangxiang and arrange in the mode of material gain wavelength monotone variation at spectrum, by closing the more unit of bundle light beam, realize the more Laser output of high brightness.
The invention has the advantages that: the present invention is easy to realize super brightness, high power laser light output, as long as the laser cell using can swash, penetrates different wavelength, all can in this cavity, realize and close bundle in theory; The beam quality of outgoing laser beam of the present invention and unit laser beam are consistent, and power is the summation of unit laser beam, so its brightness can realize raising widely; The integrated degree of the present invention is high, and because all light paths are all closed and restrainted into two-beam by single grating, between unit light path, effectively stack, under unit light path permanence condition, can reduce whole device size; The grating quantity that the present invention uses is few.
Accompanying drawing explanation
Fig. 1 is that the present invention utilizes single grating external-cavity feedback to realize the schematic diagram that multiple semiconductor swashs combiner.
Fig. 2 is expansion schematic diagram of the present invention.
Fig. 3 is semiconductor laser module structural representation of the present invention.
Fig. 4 is that the present invention closes bundle process and can expand to a plurality of semiconductor laser modules and close bundle schematic diagram.
Figure number implication: 1,1 ', N1, NN, N1 ', NN '. semiconductor laser module; 11,12,13,11 ', 12 ', 13 '. the unit light beam of semiconductor laser module output; 14. semiconductor lasers; 15. fast axis collimation mirrors; 16. slow axis collimating mirrors; 2,2 ', 21,2N, 21 ', 2N '. field lens; 3. grating; 4,4 '. the anti-sight glass of exocoel; 5. half-wave plate, 61,62. speculum, 7. polarization splitting prisms, 8,8 ', 8N, 8N '. polarized laser beam, 9,9N. polarization coupling output beam, in figure at semiconductor laser module 1,1 ', N1, NN, N1 ', single arrow that NN ' locates represents that spectrum closes Shu Fangxiang.
Embodiment
If accompanying drawing 1 is to as shown in accompanying drawing 4, the present invention utilizes single grating external-cavity feedback to realize the device that multiple semiconductor swashs combiner, by semiconductor laser module 1,1 ' with the anti-sight glass 4 of exocoel, 4 ' forms respectively two laser oscillation cavities, by same diffraction grating 3, realize and close bundle, two bunch polarized laser beam 8,8 ' output that acquisition power raising several times, beam quality equate with the beam quality of unit light beam, then by polarization coupling, realize single beam and export, finally realize 9 outputs of high-power and high-lighting beam quality polarization coupling output beam.
The process of utilizing single grating external-cavity feedback to realize the sharp combiner of multiple semiconductor realizes closing to restraint with two semiconductor laser modules and describes: two identical semiconductor laser modules 1, 1 ' symmetry is placed on grating 3 normal OP both sides, if each semiconductor laser module 1, 1 ' exports respectively 3 bunch polarization unit light beams 11, 12, 13 and 11 ', 12 ', 13 ', through field lens 2, after 2 ' effect, unit light beam incides on grating 3 with the angle of monotone variation, and overlap at grating 3, angle dispersion and the anti-sight glass 4 of exocoel by grating 3, 4 ' feedback effect, make the unit laser beam 11 of starting of oscillation, 12, 13 and 11 ', 12 ', 13 ' wavelength X
1, λ
2, λ
3different, and close Shu Fangxiang monotone variation along spectrum.So from the anti-sight glass 4 of exocoel, 4 ' output two light beams quality is identical with unit light beam, spectrum consistent, power improves the linearly polarized laser bundle 8 and 8 ' of 3 times, then wherein a branch of light beam 8 overturns 90 ° through half-wave plate 5 effect after vibration directions, with process speculum group 61, the light beam 8 ' of 62 effects is realized polarization coupling by polarization splitting prism 7, final output beam quality is identical with unit light beam, and power improves the polarization coupling output beam 9 of 6 times.
If the grating cycle is Λ, optical grating diffraction level time is 1 grade, and the incidence angle of unit laser beam 11,12,13 on grating is respectively θ
1, θ
2, θ
3(θ
1< θ
2< θ
3), through the feedback effect of grating dispersion and the anti-sight glass of exocoel, it is θ that the laser beam of realization vibration has the identical angle of diffraction, the output wavelength wavelength of unit light beam is respectively λ
1, λ
2, λ
3meet following relationship:
Λ*（sinθ
1+sinθ）=λ
1；
Λ*（sinθ
2+sinθ）=λ
2；
Λ*（sinθ
3+sinθ）=λ
3；
The excitation wavelength λ of laser cell
1, λ
2, λ
3also monotone variation: λ
1< λ
2< λ
3.
Take centre wavelength as 980nm, the semiconductor laser array that comprises 19 luminous points be example, spectrum closes the slow-axis direction that Shu Fangxiang is laser array, pass through the spectral distribution of exocoel feedback mirrors output beam as shown in Figure 2, along laser array slow-axis direction unit excitation wavelength monotonic increase.Adopt 2 identical laser arrays through the above-mentioned bundle that closes, power output can improve nearly 38 times, and beam quality is only the beam quality of single luminous point, and its brightness also improves nearly 38 times.
Semiconductor laser module 1 is comprised of semiconductor laser 14, fast axis collimation mirror 15 and slow axis collimating mirror 16, as shown in Figure 3, wherein 14 of semiconductor laser gain wavelength comprises from ultraviolet to infrared all energy excitation wavelengths, the chamber face plating anti-reflection film of Laser output direction, its reflectivity <0.5%, another chamber face plating high-reflecting film, its reflectivity >95%.
Semiconductor laser module 1,1 ', the position relationship of field lens 2,2 ' and grating 3 meets: semiconductor laser module 1,1 ' and grating 3 lay respectively at field lens 2,2 ' place, focal plane, front and back.
The above-mentioned bundle process of closing can expand to a plurality of semiconductor laser modules and closes bundle, as shown in Figure 4, in grating normal bilateral symmetry, place a plurality of semiconductor laser module N1, NN, N1 ', NN ' and the with it field lens 21 of correspondence, 2N, 21 ', 2N ', wherein semiconductor laser module arrangement mode closes the arrangement of Shu Fangxiang monotone variation according to its material gain wavelength along spectrum, the light beam of semiconductor laser module output overlaps after field lens effect on grating 3, again by the anti-sight glass 4 of exocoel, 4 ' feedback effect, the light beam that only can turn back to semiconductor laser module along light path could form feedback, dispersion characteristics in conjunction with grating, make semiconductor laser module output wavelength close Shu Fangxiang monotone variation along spectrum.In two of the anti-sight glass 4 of exocoel, 4 ' output, restraint polarized laser beam 8N, 8N ' after polarization coupling, form single beam 9N output, output spectrum is the stack λ of unit laser beam wavelength
1, λ
2λ
m-1, λ
m.If adopt 2 groups of each 5 semiconductor laser arrays, each laser array is comprised of 19 luminous points, and the brightness of output can improve nearly 190 times.
Claims (8)
1. utilize single grating external-cavity feedback to realize the device that multiple semiconductor swashs combiner, it is characterized in that comprising: semiconductor laser module (1,1 '), field lens (2,2 '), grating (3), exocoel feedback mirrors (4,4 '), half-wave plate (5), speculum group (61,62), polarization splitting prism (7), its semiconductor laser module (1,1 ') form respectively two laser oscillation cavities with exocoel feedback mirrors (4,4 '), wherein:
Semiconductor laser module (1,1 ') is comprised of semiconductor laser (14), fast axis collimation mirror (15) and slow axis collimating mirror (16);
Unit light beam incides the direction of vibration of grating (3) and the polarization direction of grating (3) requirement matches;
The position relationship of semiconductor laser module (1,1 '), field lens (2,2 ') and grating (3) meets: semiconductor laser module (1,1 ') and grating (3) lay respectively at the place, focal plane, front and back of field lens (2,2 ').
2. the single grating external-cavity feedback of utilization according to claim 1 realizes the device that multiple semiconductor swashs combiner, it is characterized in that: semiconductor laser (14) is a plurality of laser single tube combinations, or be laser array, or the laser linear array being formed by laser array or the battle array that changes, or a plurality of laser linear array or the repeatedly combination of battle array.
3. the single grating external-cavity feedback of utilization according to claim 1 realizes the device that multiple semiconductor swashs combiner, it is characterized in that: the chamber facial mask reflectivity <0.5% of semiconductor laser (14) Output of laser one end, the chamber facial mask reflectivity >95% of the other end; The degree of polarization >95% of this semiconductor laser (14) outgoing laser beam.
4. the single grating external-cavity feedback of utilization according to claim 1 realizes the device that multiple semiconductor swashs combiner, it is characterized in that: the material gain wavelength of semiconductor laser (14) covers all energy of semiconductor laser excitation wavelength, comprise that, from ultraviolet to infrared, its arrangement mode closes Shu Fangxiang monotone variation along spectrum; When semiconductor laser (14) is a plurality of laser cell combination, laser cell material is identical or different each other.
5. the single grating external-cavity feedback of utilization according to claim 1 realizes the device that multiple semiconductor swashs combiner, it is characterized in that: grating (3) is transmission or reflective, only there is 1 order diffraction or only have-1 order diffraction, diffraction efficiency >90%, and there is high damage threshold, reach 10KW/cm
2magnitude.
6. the single grating external-cavity feedback of utilization according to claim 1 realizes the device that multiple semiconductor swashs combiner, it is characterized in that: exocoel feedback mirrors (4,4 ') be partially reflecting mirror, reflectivity is 5% ~ 15%, and the transmission direction of the diffraction light producing with grating (3) is vertical.
7. the single grating external-cavity feedback of utilization according to claim 1 realizes the device that multiple semiconductor swashs combiner, it is characterized in that: half-wave plate (5) and polarization splitting prism (7) are wide wavestrip element, it uses spectral region to be greater than exocoel feedback mirrors (4,4 ') output polarization laser beam (8,8 ') spectral width, and there is high damage threshold, require, under laser continuous operation mode, to be greater than 10KW/cm
2.
8. utilize single grating external-cavity feedback to realize the method that multiple semiconductor swashs combiner, it is characterized in that:
Adopt single grating, by exocoel, feed back, realize a plurality of semiconductor lasers and close and restraint into two-beam, then close bundle in conjunction with the semiconductor laser that polarization coupling is realized super brightness, the output of high power single laser beam, be specially:
A, two identical semiconductor laser modules (1,1 ') symmetry is placed on grating (3) normal OP both sides, establishes each laser module (1,1 ') and exports respectively 3 bunch polarization unit light beams (11,12,13 and 11 ', 12 ', 13 '), through field lens (2,2 '), after effect, unit light beam incides grating (3) above with the angle of monotone variation, and overlaps at grating (3);
B, by the angle dispersion of grating (3) and the feedback effect of exocoel feedback mirrors (4,4 '), make the wavelength X of the unit laser beam (11,12,13 and 11 ', 12 ', 13 ') of starting of oscillation
1, λ
2, λ
3different, and close Shu Fangxiang monotone variation along spectrum, so from exocoel feedback mirrors (4,4 ') output two light beams quality is identical with unit light beam, spectrum consistent, power improves the linearly polarized laser bundle (8 and 8 ') of 3 times, wherein light beam (8) is through 90 ° of half-wave plate (5) effect after vibration direction upsets, by polarization splitting prism (7), realize polarization coupling with the polarization coupling output beam (9 ') acting on through speculum group (61,62);
C, the method expand to closes Shu Fangxiang at spectrum and adopts more multiple semiconductor laser module, these semiconductor laser modules close on Shu Fangxiang and arrange in the mode of material gain wavelength monotone variation at spectrum, by closing the more unit of bundle light beam, realize the more Laser output of high brightness.
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| WO2017110121A1 (en) * | 2015-12-25 | 2017-06-29 | 鴻海精密工業股▲ふん▼有限公司 | Line beam light source, line beam irradiation device, and laser lift off method |
| CN107589549B (en) * | 2017-10-19 | 2023-10-27 | 四川思创激光科技有限公司 | Fiber laser synthesizer |
| US11086058B2 (en) | 2018-12-06 | 2021-08-10 | Beijing Voyager Technology Co., Ltd | Transmitter having a light modulator for light detection and ranging (LIDAR) |
| CN114498294A (en) * | 2022-01-25 | 2022-05-13 | 中国工程物理研究院应用电子学研究所 | Semiconductor laser and optical fiber coupling structure using grating to form external cavity resonance |
| CN114243452A (en) * | 2022-02-24 | 2022-03-25 | 深圳市星汉激光科技股份有限公司 | Interlocking light path of semiconductor laser |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6208679B1 (en) * | 1998-09-08 | 2001-03-27 | Massachusetts Institute Of Technology | High-power multi-wavelength external cavity laser |
| CN102273030A (en) * | 2008-11-04 | 2011-12-07 | 麻省理工学院 | External-cavity one-dimensional multi-wavelength beam combining of two-dimensional laser elements |
-
2012
- 2012-09-26 CN CN201210361979.6A patent/CN102868089B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6208679B1 (en) * | 1998-09-08 | 2001-03-27 | Massachusetts Institute Of Technology | High-power multi-wavelength external cavity laser |
| CN102273030A (en) * | 2008-11-04 | 2011-12-07 | 麻省理工学院 | External-cavity one-dimensional multi-wavelength beam combining of two-dimensional laser elements |
Non-Patent Citations (2)
| Title |
|---|
| 刘秀玲 等.大功率半导体激光器二维阵列光纤耦合技术.《器件制造与应用》.2007,第32卷(第２期),第113-116页. |
| 大功率半导体激光器二维阵列光纤耦合技术;刘秀玲 等;《器件制造与应用》;20070228;第32卷(第２期);第113-116页 * |
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