CN204103247U - A kind of miniaturized compact spectrum beam combination semicondcutor laser unit - Google Patents
A kind of miniaturized compact spectrum beam combination semicondcutor laser unit Download PDFInfo
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- CN204103247U CN204103247U CN201420608420.3U CN201420608420U CN204103247U CN 204103247 U CN204103247 U CN 204103247U CN 201420608420 U CN201420608420 U CN 201420608420U CN 204103247 U CN204103247 U CN 204103247U
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Abstract
The utility model discloses a kind of miniaturized compact spectrum beam combination semicondcutor laser unit, comprise semiconductor laser, collimating mirror, convertible lens, grating, chamber mirror, focus lamp, coupled fiber, described semiconductor laser and grating lay respectively at the position of convertible lens both sides focal distance f, also comprise some groups of high reflective mirrors, the laser of semiconductor laser arrives convertible lens after collimating mirror after one group of high reflective mirror is launched, grating is arrived through the transmitting of one group of high reflective mirror again from convertible lens laser out, after being reflected by chamber mirror, feedback semiconductor laser forms spectrum locking, again synthesis is exported light through focus lamp coupled into optical fibres, the utility model adopts reflective negative post lens as convertible lens, light path folding is got up, and improves the compactedness of lasing spectrum of semiconductor lasers synthesis light path, thus effectively reduces the volume of spectrum beam combination semicondcutor laser unit.
Description
Technical field
The present utility model relates to semiconductor laser technique field, particularly high brightness semiconductor laser spectrum beam combination, optical-fiber laser pumping, industrial processes, optical communication and spectral measurement field.
Background technology
High-power semiconductor laser development is in recent years very rapid, more than the highest continuous semiconductor optical output power of laser in the laboratory had been reported can reach kilowatt, photoelectric efficiency reaches as high as more than 80%, the advantage such as have that photoelectric conversion efficiency is high, volume is little, reliability is high compared to the laser such as solid, gas and the life-span is long, has important application in fields such as industrial processes, military affairs and optical communications.But due to the restriction of its factor such as waveguiding structure and device package, beam quality on common wide surface of emission semiconductor laser fast and slow axis direction is extremely unbalanced, beam quality for single luminescence unit slow-axis direction is the decades of times of quick shaft direction, for standard bar bar, the beam quality of slow-axis direction is thousands of times of quick shaft direction, cause that the beam quality of output beam is deteriorated, power density is low, be difficult to as high-power direct light source applications.Therefore how to obtain high power simultaneously, the semiconductor laser of high light beam quality exports and become the study hotspot of international semiconductor laser aspect.
Spectrum beam combination technology is one of effective ways realizing high-brightness semiconductor Laser output, exocoel and semiconductor laser rear facet is first utilized to form external-cavity semiconductor laser, different conjunction Shu Danyuan is locked in different wavelength, the dispersion interaction of recycling grating or other dispersion elements, each luminescence unit laser beam space is overlapped into a branch of output, such beam quality closed after bundle is greatly improved, so realize high light beam quality under achieving high-power output condition to export, drastically increase semiconductor laser output brightness.
Utility model content
The object of the invention is the structural compactness in order to promote spectrum beam combination semicondcutor laser unit, proposing the volume that a kind of method based on reflective convertible lens effectively reduces spectrum beam combination semicondcutor laser unit.
The technical solution used in the present invention:
A kind of miniaturized compact spectrum beam combination semicondcutor laser unit, comprise semiconductor laser, collimating mirror, convertible lens, grating, chamber mirror, focus lamp, coupled fiber, described semiconductor laser and grating lay respectively at the position of convertible lens both sides focal distance f, also comprise some groups of high reflective mirrors, the laser of semiconductor laser arrives convertible lens after collimating mirror after one group of high reflective mirror is launched, grating is arrived through the transmitting of one group of high reflective mirror again from convertible lens laser out, after being reflected by chamber mirror, feedback semiconductor laser forms spectrum locking, again synthesis is exported light through focus lamp coupled into optical fibres.
In technique scheme, described one group of high reflective mirror is two high reflective mirrors, and described high reflective mirror is disposed adjacent on paths path.
In technique scheme, described semiconductor laser is the spatial linear arrangement of multiple luminescence unit, including but not limited to CM bar bar, the Mini bar bar of standard, or the linear array be spatially arranged in for emitter and bar bar, folded battle array.
In technique scheme, the front facet of described semiconductor laser takes the process of plating anti-reflection film, makes front facet obtain transmitance and is greater than 99%.
In technique scheme, described convertible lens includes but not limited to deielectric-coating, Metal film reflector formula cylindrical lens.
In technique scheme, described chamber mirror is the level crossing with certain reflectivity, and its reflecting light personal attendant semiconductor laser output wavelength is selected, and reflectance value is 1% to 50%.
The utility model also provides a kind of miniaturized compact spectrum beam combination semicondcutor laser unit, comprise semiconductor laser, collimating mirror, convertible lens, grating, focus lamp, coupled fiber, described semiconductor laser and grating lay respectively at the position of convertible lens both sides focal distance f; Also comprise some groups of high reflective mirrors and wavelength chirp Volume Bragg grating, the laser of semiconductor laser arrives convertible lens after collimating mirror and wavelength chirp Volume Bragg grating after one group of high reflective mirror is launched, arrive grating through the transmitting of one group of high reflective mirror again from convertible lens laser out, be coupled directly into optical fiber by focus lamp.
Under the effect of the light beam that semiconductor laser exports at convertible lens after collimating mirror collimation, beamlet diverse location being closed Shu Danyuan changes into different angle and the beamlet of convergence incides on grating, the dispersion interaction of grating is by different wave length λ 1, λ 2 ... the wavelength of each beamlet of λ n(is strictly determined by the position of this array element and grating equation), the beamlet of different incidence angles is with identical angle of emergence diffraction, diffracted beam reflects through chamber mirror part, former feeding back in respective semiconductor laser along light path realizes feedback lock, each semiconductor laser is sent and injects the laser of feedback laser phase co-wavelength.
Owing to needing the focal distance f place, both sides semiconductor laser and grating being placed in respectively convertible lens, this can cause the long excessive problem of spectrum beam combination device, under particularly requiring to close the narrower prerequisite of bundle output beam spectral width, the focal distance f increasing convertible lens effectively can compress the spectrum width closing bundle output beam.But simultaneously also can the volume of aggrandizement apparatus further.
Therefore adopt reflective convertible lens, light path is folded up along another direction (if necessary, several high reflectance lens can also be added and fold further), effectively can improve the compactedness of whole device.
Compared with traditional technology, the utility model has the advantage of: adopt reflective negative post lens as convertible lens, light path folding is got up, improves the compactedness of lasing spectrum of semiconductor lasers synthesis light path, thus effectively reduce the volume of spectrum beam combination semicondcutor laser unit.
Accompanying drawing explanation
Fig. 1 is the structural representation of conventional reflector formula grating spectrum beam merging apparatus;
Fig. 2 is the structural representation of common transmission-type grating spectrum beam combination device;
Fig. 3 is the structural representation that the utility model compact reflective gratings closed ring spectra closes bundle;
Fig. 4 is the structural representation of the utility model compact reflective gratings open loop spectrum beam combination;
Fig. 5 is the structural representation that the utility model compact transmission-type grating closed ring spectra closes bundle;
Fig. 6 is the structural representation of the utility model compact transmission-type grating open loop spectrum beam combination;
Fig. 7 is that the compact transmission-type grating closed ring spectra of the utility model band high reflective mirror closes the structural representation restrainted;
Fig. 8 is the structural representation of the compact transmission-type grating open loop spectrum beam combination of the utility model band high reflective mirror;
Wherein: 1 be semiconductor laser, 2 are collimating mirrors, 3 are wavelength chirp Volume Bragg gratings, 4 are high reflective mirrors, 5 are convertible lens, 6 are gratings, 7 are chamber mirrors, 8 are focus lamps, 9 is coupled fibers.
Embodiment
As shown in Figure 1 and Figure 2, for the structural representation of traditional reflective, transmission-type grating spectrum beam combination device, semiconductor laser and grating lay respectively at the position of convertible lens both sides focal distance f, and such arranging directly causes final equipment very huge, is unfavorable for that equipment miniaturization designs.
The utility model is for realizing compact apparatus, light path is folded, same meet the position that semiconductor laser and grating lay respectively at convertible lens both sides focal distance f, allow convertible lens and grating carry out light path reflect, the reduction spatially of whole device is realized, as shown in Fig. 3, Fig. 5 by the position adjusting convertible lens and grating; Chamber mirror (7) in figure is for having the level crossing of certain reflectivity, its reflecting light personal attendant semiconductor laser output wavelength is selected, reflectance value is 1% to 50%, if placed wavelength chirp Volume Bragg grating before semiconductor laser, then can the output light of different spatial be locked on different wavelength respectively, therefore chamber mirror can not be needed directly to be completed by grating and to close bundle, as shown in Fig. 4, Fig. 6.
Same reason, according to the actual requirements, needs further compression stroke, several high reflectance lens can be adopted to fold further, as shown in Figure 7, Figure 8.
In order to realize above-mentioned principle, adopt following implementation Process.
(1) semiconductor laser is encapsulated in heat sink on, forms such as composition linear array, folded battle array, and its fast axle and slow axis beam are collimated;
(2) different spatial of semiconductor laser is converted into different incident angles and squeezes into grating by reflective convertible lens, and the hot spot of all semiconductor laser elements overlap on grating is a hot spot;
(3) all laser beams are diffracted into chamber mirror with the identical angle of diffraction by grating;
(4) laser beam feeds back in respective semiconductor laser cavity along original optical path through grating after chamber mirror feedback again, each semiconductor laser is sent and injects the laser of feedback laser phase co-wavelength;
(5) all semiconductor lasers laser of wavelength locking after feedback is combined into a branch of by grating, realizes spectrum beam combination;
(6) spectrum beam combination laser coupled is entered Transmission Fibers.
In above process, the semiconductor laser described in step (1) (2) (4) (5), including but not limited to CM bar bar, the Mini bar bar of standard, or the linear array be spatially arranged in for emitter and bar bar, folded battle array.And the front facet of semiconductor laser takes the process of plating anti-reflection film, and make front facet obtain transmitance and be greater than 99%, output spectrum scope can be selected according to user demand.
In above process, the Transmission Fibers mentioned in step (6), the parameters such as its core diameter, numerical aperture, wavelength export the beam quality of light according to semiconductor laser, wavelength parameter is selected.
All features disclosed in this specification, except mutually exclusive feature, all can combine by any way.
The foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all do within spirit of the present utility model and principle any amendment, equivalent to replace and improvement etc., all should be included within protection range of the present utility model.
Claims (10)
1. a miniaturized compact spectrum beam combination semicondcutor laser unit, comprises semiconductor laser, collimating mirror, convertible lens, grating, chamber mirror, focus lamp, coupled fiber, and described semiconductor laser and grating lay respectively at convertible lens both sides focal length
fposition, it is characterized in that comprising some groups of high reflective mirrors, the laser of semiconductor laser arrives convertible lens after collimating mirror after one group of high reflective mirror is launched, grating is arrived through the transmitting of one group of high reflective mirror again from convertible lens laser out, after being reflected by chamber mirror, feedback semiconductor laser forms spectrum locking, then synthesis is exported light through focus lamp coupled into optical fibres.
2. a kind of miniaturized compact spectrum beam combination semicondcutor laser unit according to claim 1, it is characterized in that described one group of high reflective mirror is two high reflective mirrors, described high reflective mirror is disposed adjacent on paths path.
3. a kind of miniaturized compact spectrum beam combination semicondcutor laser unit according to claim 1, it is characterized in that described semiconductor laser is the spatial linear arrangement of multiple luminescence unit, including but not limited to CM bar bar, the Mini bar bar of standard, or the linear array be spatially arranged in for emitter and bar bar, folded battle array.
4. a kind of miniaturized compact spectrum beam combination semicondcutor laser unit according to claim 3, is characterized in that the front facet of described semiconductor laser takes the process of plating anti-reflection film, makes front facet obtain transmitance and be greater than 99%.
5. a kind of miniaturized compact spectrum beam combination semicondcutor laser unit according to claim 1, is characterized in that described convertible lens includes but not limited to deielectric-coating, Metal film reflector formula cylindrical lens.
6. a kind of miniaturized compact spectrum beam combination semicondcutor laser unit according to claim 1, it is characterized in that described chamber mirror is the level crossing with certain reflectivity, its reflecting light personal attendant semiconductor laser output wavelength is selected, and reflectance value is 1% to 50%.
7. a miniaturized compact spectrum beam combination semicondcutor laser unit, comprises semiconductor laser, collimating mirror, convertible lens, grating, focus lamp, coupled fiber, and described semiconductor laser and grating lay respectively at convertible lens both sides focal length
fposition; It is characterized in that comprising some groups of high reflective mirrors and wavelength chirp Volume Bragg grating, the laser of semiconductor laser arrives convertible lens after collimating mirror and wavelength chirp Volume Bragg grating after one group of high reflective mirror is launched, arrive grating through the transmitting of one group of high reflective mirror again from convertible lens laser out, be coupled directly into optical fiber by focus lamp.
8. a kind of miniaturized compact spectrum beam combination semicondcutor laser unit according to claim 7, it is characterized in that described one group of high reflective mirror is two high reflective mirrors, described high reflective mirror is disposed adjacent on paths path.
9. a kind of miniaturized compact spectrum beam combination semicondcutor laser unit according to claim 7, is characterized in that the front facet of described semiconductor laser takes the process of plating anti-reflection film, makes front facet obtain transmitance and be greater than 99%.
10. a kind of miniaturized compact spectrum beam combination semicondcutor laser unit according to claim 7, is characterized in that described convertible lens includes but not limited to deielectric-coating, Metal film reflector formula cylindrical lens.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106025792A (en) * | 2016-05-04 | 2016-10-12 | 中国工程物理研究院应用电子学研究所 | Device used for improving three primary colour laser white light source spectral component through spectral synthesis |
| CN108646425A (en) * | 2018-04-03 | 2018-10-12 | Oppo广东移动通信有限公司 | Laser projecting apparatus, image acquiring device and electronic equipment |
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2014
- 2014-10-21 CN CN201420608420.3U patent/CN204103247U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106025792A (en) * | 2016-05-04 | 2016-10-12 | 中国工程物理研究院应用电子学研究所 | Device used for improving three primary colour laser white light source spectral component through spectral synthesis |
| CN108646425A (en) * | 2018-04-03 | 2018-10-12 | Oppo广东移动通信有限公司 | Laser projecting apparatus, image acquiring device and electronic equipment |
| CN108646425B (en) * | 2018-04-03 | 2019-08-23 | Oppo广东移动通信有限公司 | Laser projecting apparatus, image acquiring device and electronic equipment |
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