CN105892067A - Multi-wavelength laser beam combination system - Google Patents
Multi-wavelength laser beam combination system Download PDFInfo
- Publication number
- CN105892067A CN105892067A CN201610304413.8A CN201610304413A CN105892067A CN 105892067 A CN105892067 A CN 105892067A CN 201610304413 A CN201610304413 A CN 201610304413A CN 105892067 A CN105892067 A CN 105892067A
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- China
- Prior art keywords
- wavelength
- laser
- tube core
- volume bragg
- semiconductor laser
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
- G02B27/1006—Beam splitting or combining systems for splitting or combining different wavelengths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a multi-wavelength laser beam combination system, comprising tube cores (1) of a plurality of semiconductor lasers, and a fast axis collimation lens (2), a volume Bragg grating (VBG) (3), a fast-slow axis collimation lens (4), a holographic grating (5) and a beam transforming lens set (6) arranged on an output light path of the semiconductor laser tube cores. The system is characterized in that the fast-slow axis collimation lens (4) is placed on the back of the volume Bragg grating (3), so that laser beams from the semiconductor laser tube cores are diffracted to the same direction on +1-level diffraction fringes to realize semiconductor laser beam combination of the multiple tube cores (1). The beam combination technology improves the wavelength stability of each semiconductor laser tube core, and also improves the working stability of the whole system. The beam combination technology provides a new method and path for realizing a high-brightness and high-power direct semiconductor laser system.
Description
Technical field
The present invention relates to a kind of multiple-wavelength laser and close beam system, particularly relate to wavelength linear by Volume Bragg grating frequency stabilization
The conjunction beam system of semiconductor laser tube core.
Background technology
Along with high power laser technology industry, medical treatment and national defence in application, increasingly require more powerful, brightness is higher
LASER Light Source.These high power laser light sources include first generation carbon dioxide LASER Light Source, and the second filial generation is with YAG as generation
The Solid State Laser light source of table, third generation fiber laser light source and forth generation direct semiconductor light source.Direct semiconductor needs will very
Multiple semiconductor laser single tubes are joined together, and produce high power laser.Therefore semiconductor laser conjunction bundle technology just seems particularly
Important.Existing conjunction bundle technology has space to close bundle, but it is only capable of improving power and can not improve brightness；Polarization coupling, Ke Yiti
High brightness, but bundle two-way laser can only be closed；Wavelength coupling, can improve power and brightness, but it by unify outer instead
Penetrating and be supplied to each laser instrument single tube, the fluctuation of external reflection can directly affect duty and the output of each single-tube laser
Power.High power semiconductor lasers closes bundle needs a kind of new technology to meet the requirement of high-power and high-luminance conjunction bundle.
Summary of the invention
For the deficiencies in the prior art, the present invention proposes a kind of novel volume Bragg grating by external wavelength linear chrip and enters
The multi-die semiconductor laser instrument of row wavelength locking closes bundle technology, is that multiple semiconductor laser tube cores carry out wavelength lock respectively
Fixed, the system of wavelength coupling is realized by dispersion element.
The technical solution adopted in the present invention is: a kind of multiple-wavelength laser closes beam system, including multiple semiconductor lasers
Tube core 1 and the fast axis collimation lens 2 being arranged on described semiconductor laser tube core output light path, volume Bragg grating (VBG)
3, fast and slow axis collimating lens 4, holographic grating (5) and optical beam transformation battery of lens 6, multiple centre wavelength are the tube core of 915nm
(1) be arranged in a linear, be arranged on the circulation of band microchannel water heat sink on, in the outside of fast axis collimation lens 2, cloth is installed
Glug body grating (3), along the orientation of tube core 1, the center reflection wavelength of the volume Bragg grating 3 linearly row of warbling
Row；It is characterized in that: described volume Bragg grating 3 back side is placed with fast and slow axis collimating lens (4), make from each partly
The laser beam of conductor laser tube core, becomes collimated light beam after these lens, projects on holographic grating (5), suitably selects
Select the screen periods of holographic grating, direction of rotation and the space length with tube core so that by the different wave length from each tube core
Laser beam, on+1 order diffraction striped, be diffracted into same direction, it is achieved the semiconductor laser of Multi-core closes bundle.
The wave spread of described volume Bragg grating 2 is 20nm, and centre wavelength is 915-10nm, the pipe of maximum wavelength
The centre wavelength of core is 915+10nm, and each middle tube core wavelength is carried out according to the principle of its locus and linear chrip
Select.
The volume Bragg grating that the tube core of described each semiconductor laser is corresponding forms the associating laser instrument formed,
The optical maser wavelength of its output is determined by the center reflection wavelength of the volume Bragg grating of its correspondence, the individual cloth of each tube core corresponding
Glug grating.
The tube core of described multiple semiconductor lasers can be the tube core separated, it is also possible to be laser instrument bar bar (bar).
The center reflection wavelength of described multiple volume Bragg gratings the most linearly changes, and center reflection wavelength exists
In 700～1100 nanometer range, foveal reflex rate is 5%～50%.
High anti-(HR) film has been plated in one end of semiconductor laser tube core 1, and the other end has plated anti-reflection (AR) film, with killer tube
The lasing that core F-P cavity pattern causes, beneficially volume Bragg grating realize wavelength locking by optical feedback.
The invention has the beneficial effects as follows: 1, the present invention provides an outside volume Bragg grating to each semiconductor laser tube core
Carry out wavelength locking, each laser tube core individually can be regulated, enhance the operability of technique.2, outside
Volume Bragg grating has carried out stronger wavelength locking to each semiconductor laser tube core.3, minority semiconductor laser tube core
In the case of duty changes, the work of whole system will not be destroyed.In the case of dispersion element departs from linear,
Still can be by the centre wavelength of the outside volume Bragg grating of regulation, or the horizontal level of Volume Bragg grating, carry out
Correct.The reliability and stability of 4 systems improve.
Accompanying drawing explanation
Fig. 1 is the overall structure that semiconductor laser wavelength of the present invention closes bundle.
Fig. 2 is the scattergram of each semiconductor laser tube core output wavelength.
Fig. 3 (a) is the principle schematic of the positive crossed disperstion of holographic grating.
Fig. 3 (b) is the principle schematic of holographic grating reverse dispersion.
In figure: 1 tube core, 2 fast axis collimation lens (FAC), 3 volume Bragg gratings (VBG), 4 fast and slow axis collimating lens,
5 holographic gratings, 6 optical beam transformation battery of lens.
Fig. 1 gives the population structure closing bundle scheme that the present invention proposes.
Embodiment 1:
Known by Fig. 1, be that the multiple-wavelength laser of the present invention closes beam system schematic diagram.It is 915nm by multiple nominal center wavelength
The tube core 1 of semiconductor laser be arranged on the water circulation of band microchannel heat sink on, multiple tube cores are arranged in a linear.To each
Tube core is installed fast axis collimation lens 2 and is carried out fast axis collimation.In the outside of fast axis collimation lens 2, volume Bragg grating 3 is installed.
Along orientation of these row of tube core 1, the center reflection wavelength of volume Bragg grating 2 is linearly warbled arrangement.Select its ripple
Long distribution is 20nm, and namely the centre wavelength of the tube core of minimum wavelength is 915-10nm, the tube core of maximum wavelength
Centre wavelength is 915+10nm.Each middle tube core wavelength selects according to the principle of its locus and linear chrip.
Fast and slow axis collimating lens 4 is placed so that from the laser beam of each semiconductor laser tube core after volume Bragg grating 2,
After these lens, become collimated light beam, project on holographic grating 5.Suitably select the screen periods of holographic grating 5, rotation
Turn direction and the space length with semiconductor laser tube core so that it can be just by the different wave length from each tube core 1
Laser beam, on+1 order diffraction striped, be diffracted into same direction.
It is 70 degree that the fast axle of fast axis collimation lens 2 exports the angle of divergence naturally.Fast axis collimation lens 2 is first by the output light of tube core 1
The beam divergence angle that beam divergence angle is collimated to slow axis exports naturally is identical, is here 15 degree.Fast and slow axis collimating lens 4 is again
It is less parallel light beam by beam collimation, projects on holographic grating 5.This holographic grating 5 is for glare to+1 order diffraction
Grid (Blazed grating).The light beam of holographic grating output, carries out optical beam transformation through optical beam transformation battery of lens 6, becomes
The collimated light beam that radius is thinner.It is divided into one group by every for the tube core of semiconductor laser array six, is driven with constant current source.
The conjunction Shu Yuanli of the present invention is described as follows: first explain the principle of volume Bragg grating 3 (VBG) wavelength locking.Half
High anti-(HR) film has been plated in one end of conductor laser tube core 1, and the other end has plated anti-reflection (AR) film.HR film and VBG associating
Constituting laserresonator, HR does not has wavelength selectivity, VBG to have wavelength selectivity, the output wavelength of final laser instrument by
VBG decides.Here it is outer body grating carries out the principle of wavelength locking.
As shown in Figure 2.It it is the scattergram of each semiconductor laser tube core output wavelength.One group of body according to rectilinear direction arrangement
The center reflection wavelength of grating (VBG), this wavelength is linearly linear change, sees " reflectance-the ripple in Fig. 2
Long " curve.Due to wavelength locking effect, according to the output wavelength of one group of semiconductor laser tube core of rectilinear direction arrangement,
Also it is linearly linear change.See " luminous power-wavelength " curve in Fig. 2.
As shown in Fig. 3 (a), more illustratively positive crossed disperstion and the principle of reverse dispersion.This is common positive crossed disperstion.When
A branch of directional light is the most oblique when be mapped on holographic grating 5, it may occur that 0 grade, ± 1 grade, ± 2 order diffractions.I
The most only use 0 order diffraction, it is possible to use to 0 order diffraction strengthen balzed grating, improve 0 order diffraction efficiency.When
The when that incident angle being certain, different incident wavelengths, different output angle of diffraction can be produced.Near angle one
In the case of level approximation, angle of diffraction is linear with incident wavelength.
As shown in Fig. 3 (b), referred to as reverse dispersion.By above light path in turn, we are not with above-mentioned identical multichannel
The light beam directive holographic grating of co-wavelength, according to reversibility of optical path, we can find that the most all these light beam is through diffraction
After, all can be merged into a light beam up.All of incident wavelength composition is contained inside this light beam.
The core of the present invention is the outer body Bragg grating arranged by linear chrip, respectively to corresponding semiconductor laser
Tube core carries out wavelength locking, and these wavelength locking are the linear array of linear chrip, by the reverse dispersion of holographic grating by this
The light beam of a little different wave lengths is combined into a branch of.
The present invention proposes the volume Bragg grating (VBG) with each semiconductor laser single tube of a series of next-door neighbour, and along
Rectilinear direction arranges, and the centre wavelength of these body gratings linearly changes, also referred to as linear chrip.Through these body grating light
The optical maser wavelength of each semiconductor laser single tube output of feedback is also distribution of linearly warbling, and is then passed through holographic grating color
Dissipate element, the laser of all these wavelength is merged on same direction, it is achieved the semiconductor laser of Multi-core closes bundle.Bright
Degree and luminous power are obtained for and are significantly increased.
In light path, it is followed successively by semiconductor laser tube core, fast axis collimation lens, volume Bragg grating, fast and slow axis collimation thoroughly
Mirror, holographic grating, focus on and expand/contracting beam optics battery of lens.On radiating mode, each semiconductor element is by following
Heat sink and refrigerating plant.On circuit, each semiconductor laser tube core can be operated alone, it is also possible to Ji Gefen
One group is become to carry out associating driving.
It is illustrated above in conjunction with to embodiment preferred for this invention, but above-described embodiment can not be interpreted as this
The restriction of bright protection domain, all equivalence changes made according to spirit of the invention or modification, such as promote for 2 dimensions two
The pole folded battle arrays of pipe etc., all should contain within protection scope of the present invention.
Claims (6)
1. multiple-wavelength laser closes a beam system, described partly leads including the tube core (1) of multiple semiconductor lasers and being arranged on
Fast axis collimation lens (2) on volumetric laser tube core output light path, volume Bragg grating (3), fast and slow axis collimating lens (4), complete
Breath grating (5) and optical beam transformation battery of lens (6), multiple tube cores (1) are arranged in a linear and are arranged on the heat of band microchannel water circulation
On Chen, in the outside of fast axis collimation lens (2), volume Bragg grating (3) is installed, along the orientation of tube core (1),
The center reflection wavelength of volume Bragg grating (3) is linearly warbled arrangement；It is characterized in that: described volume Bragg grating (3)
The back side be placed with fast and slow axis collimating lens (4), make the laser beam from each semiconductor laser tube core, after these lens
Become collimated light beam, project on holographic grating (5), suitably select the screen periods of holographic grating (5), direction of rotation and
Space length with tube core (1) so that by the laser beam of the different wave length from each tube core, on+1 order diffraction striped,
It is diffracted into same direction, it is achieved the semiconductor laser of Multi-core (1) closes bundle.
Multiple-wavelength laser the most according to claim 1 closes beam system, it is characterised in that: described volume Bragg grating (2)
Wave spread be 20nm, centre wavelength is 915-10nm, and the centre wavelength of the tube core of maximum wavelength is 915+10nm,
Middle each tube core (1) wavelength selects according to the principle of its locus and linear chrip.
Multiple-wavelength laser the most according to claim 1 closes beam system, it is characterised in that: the pipe of each semiconductor laser
Volume Bragg grating (2) the composition associating laser instrument that core (1) is corresponding, the optical maser wavelength of its output is by the Bradley of its correspondence
The center reflection wavelength of lattice body grating (2) determines.
Multiple-wavelength laser the most according to claim 1 closes beam system, it is characterised in that: the pipe of multiple semiconductor lasers
Core (1) is the tube core or laser instrument bar bar separated.
Multiple-wavelength laser the most according to claim 1 closes beam system, it is characterised in that: multiple volume Bragg gratings (2)
Center reflection wavelength the most linearly change, center reflection wavelength in 700～1100 nanometer range, foveal reflex
Rate is 5%～50%.
Multiple-wavelength laser the most according to claim 1 closes beam system, it is characterised in that: semiconductor laser tube core (1)
One end plating high-reflecting film, the other end plating anti-reflection film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610304413.8A CN105892067A (en) | 2016-05-10 | 2016-05-10 | Multi-wavelength laser beam combination system |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610304413.8A CN105892067A (en) | 2016-05-10 | 2016-05-10 | Multi-wavelength laser beam combination system |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107121782A (en) * | 2017-05-26 | 2017-09-01 | 武汉光迅科技股份有限公司 | A kind of compact multi-wavelength light component and its application method |
| CN107272214A (en) * | 2017-07-05 | 2017-10-20 | 中国科学院上海光学精密机械研究所 | The spectrum beam combination device of the spectrum width of diffraction compression twice is realized using grating and reflecting element |
| GB2556197A (en) * | 2016-09-30 | 2018-05-23 | Nichia Corp | Light source device |
| CN109061810A (en) * | 2018-08-03 | 2018-12-21 | 武汉电信器件有限公司 | A kind of laser assembly and corresponding optical module |
| CN111435198A (en) * | 2019-01-11 | 2020-07-21 | 舜宇光学（浙江）研究院有限公司 | Collimation color combination system and lighting system |
| CN111916994A (en) * | 2020-07-01 | 2020-11-10 | 苏州创鑫激光科技有限公司 | Laser system and laser processing equipment |
| CN113131336A (en) * | 2021-04-09 | 2021-07-16 | 苏州长光华芯光电技术股份有限公司 | Wavelength locking method for semiconductor laser |
| CN113607386A (en) * | 2021-07-29 | 2021-11-05 | 苏州长光华芯光电技术股份有限公司 | Wavelength locking monitoring system and working method thereof |
| CN115128821A (en) * | 2022-08-30 | 2022-09-30 | 中国科学院长春光学精密机械与物理研究所 | Spectrum beam combining device and method based on polarization separation external cavity feedback |
| CN115629483A (en) * | 2022-12-23 | 2023-01-20 | 中国航天三江集团有限公司 | Two-dimensional array spectrum synthesis device and synthesis method thereof |
| CN117293636A (en) * | 2023-11-27 | 2023-12-26 | 长春理工大学 | Double-comb middle infrared oscillator |
-
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- 2016-05-10 CN CN201610304413.8A patent/CN105892067A/en active Pending
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2556197B (en) * | 2016-09-30 | 2021-11-24 | Nichia Corp | Light source device |
| GB2556197A (en) * | 2016-09-30 | 2018-05-23 | Nichia Corp | Light source device |
| US10359584B2 (en) | 2016-09-30 | 2019-07-23 | Nichia Corporation | Light source device |
| CN107121782A (en) * | 2017-05-26 | 2017-09-01 | 武汉光迅科技股份有限公司 | A kind of compact multi-wavelength light component and its application method |
| CN107272214A (en) * | 2017-07-05 | 2017-10-20 | 中国科学院上海光学精密机械研究所 | The spectrum beam combination device of the spectrum width of diffraction compression twice is realized using grating and reflecting element |
| CN107272214B (en) * | 2017-07-05 | 2019-08-13 | 中国科学院上海光学精密机械研究所 | The spectrum beam combination device of the spectrum width of diffraction compression twice is realized using grating and reflecting element |
| CN109061810A (en) * | 2018-08-03 | 2018-12-21 | 武汉电信器件有限公司 | A kind of laser assembly and corresponding optical module |
| CN111435198A (en) * | 2019-01-11 | 2020-07-21 | 舜宇光学（浙江）研究院有限公司 | Collimation color combination system and lighting system |
| CN111916994A (en) * | 2020-07-01 | 2020-11-10 | 苏州创鑫激光科技有限公司 | Laser system and laser processing equipment |
| CN111916994B (en) * | 2020-07-01 | 2022-04-12 | 苏州创鑫激光科技有限公司 | Laser system and laser processing equipment |
| CN113131336A (en) * | 2021-04-09 | 2021-07-16 | 苏州长光华芯光电技术股份有限公司 | Wavelength locking method for semiconductor laser |
| CN113131336B (en) * | 2021-04-09 | 2022-04-15 | 苏州长光华芯光电技术股份有限公司 | Wavelength locking method for semiconductor laser |
| CN113607386A (en) * | 2021-07-29 | 2021-11-05 | 苏州长光华芯光电技术股份有限公司 | Wavelength locking monitoring system and working method thereof |
| CN113607386B (en) * | 2021-07-29 | 2023-05-26 | 苏州长光华芯光电技术股份有限公司 | Wavelength locking monitoring system and working method thereof |
| CN115128821A (en) * | 2022-08-30 | 2022-09-30 | 中国科学院长春光学精密机械与物理研究所 | Spectrum beam combining device and method based on polarization separation external cavity feedback |
| CN115629483A (en) * | 2022-12-23 | 2023-01-20 | 中国航天三江集团有限公司 | Two-dimensional array spectrum synthesis device and synthesis method thereof |
| CN117293636A (en) * | 2023-11-27 | 2023-12-26 | 长春理工大学 | Double-comb middle infrared oscillator |
| CN117293636B (en) * | 2023-11-27 | 2024-02-23 | 长春理工大学 | Double-comb middle infrared oscillator |
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