CN107272214A - The spectrum beam combination device of the spectrum width of diffraction compression twice is realized using grating and reflecting element - Google Patents
The spectrum beam combination device of the spectrum width of diffraction compression twice is realized using grating and reflecting element Download PDFInfo
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- G02B27/10—Beam splitting or combining systems
- G02B27/1006—Beam splitting or combining systems for splitting or combining different wavelengths
Abstract
A kind of utilization grating and reflecting element realize the lasing spectrum of semiconductor lasers beam merging apparatus of the spectrum width of diffraction compression twice, including semiconductor laser light source, slow axis collimation post lens, transform lenses, grating, reflecting element, output coupling mirror.The present invention is by the use of single grating as diffraction element, and reflecting element reflects first time by grating diffration light beam, again by grating, light beam is carried out into secondary dispersion, dispersive power is doubled.By the feedback of output coupling mirror, each unit laser of semiconductor laser array is locked in different wave length respectively, the laser output of high power high luminance is obtained.Instant invention overcomes the limitation that transmission spectra closes the gain line width pairing beam element number of gain material in beam, conjunction Shu Danyuan can be increased in gain line width and in the range of the high efficiency diffraction wavelength of grating, significantly improve power output, or reduce cavity length in the case where spectrum width is certain, make laser structure compact, improve zlasing mode stability.
Description
Technical field
Grating and reflecting element are utilized the present invention relates to semiconductor laser technique field, more particularly to one kind, passes through exocoel
Feedback, realizes the lasing spectrum of semiconductor lasers beam merging apparatus of narrow linewidth high power laser light output.
Background technology
Semiconductor laser has cost low, long lifespan, small volume, and high reliability is widely used to industry
Processing, pumping is medical, the field such as communication.A key factor for restricting semiconductor laser future development is exactly brightness.Laser
The brightness of light beam determines that power is bigger by power output and beam quality, and beam quality is better, and brightness is higher.
It is the current conventional means for realizing high brightness semiconductor laser to close beam technology, and wherein spectrum beam combination is a kind of novel
Conjunction beam technology, it is main that diffraction element, C.C.Cook and T.Y.Fan are used as using grating【ASSL.26,163-166(1999)】
This method is reported for the first time and its principle is discussed in detail.The oscillation wavelength of each luminescence unit with grating dispersion and
External cavity feedback is matched, and to keep identical angle of diffraction outgoing, is realized and is closed beam.The advantage of spectrum beam combination is：By multiple single tubes half
The output combiner of conductor laser, power output is the summation of all luminescence unit power, while beam quality and single hair
Light unit is consistent, and drastically increases the brightness of semiconductor laser, realizes the laser output of nearly diffraction limit.Therefore,
Spectrum beam combination technology has become an important topic in high-power semiconductor laser field.
Spectrum beam combination is to improve the conjunction beam mode of laser power and brightness, therefore spectrum beam combination to widen spectrum as cost
During should compress laser spectrum spectrum width after conjunction beam as much as possible so that in the gain line width of gain material and grating is efficient
Increase is more in rate bandwidth closes Shu Danyuan, and this is the key for improving spectrum beam combination power and brightness.
How to compress close beam laser spectrum spectrum width be increase close beam element number subject matter, spectrum spectrum width by it is multiple because
Element is determined, mainly there is following three class：1. reduce adjacent conjunction Shu Danyuan spacing, can prepare high-density semiconductor laser array or
Person closes Shu Danyuan spacing using optical imaging system compression, but is limited to semiconductor technology, adds the string between different units
Disturb, it is impossible to feed back completely, beam efficiency is closed in reduction；2. increasing the focal length of transform lenses, but close the length and coupler of beam system
Length can increase therewith, the volume of system, which can become big and resonance cavity system stability, to be declined, overall light path increase,
It is more easy to occur crosstalk between each conjunction Shu Danyuan in the case that the angle of divergence is constant；3. the line density for improving grating is reduction grating week
Phase, but screen periods are limited by semiconductor laser wavelength, and minimum screen periods can not be less than the half of wavelength, it is assumed that half
Conductor laser wavelength is 940nm, then the highest line density of grating is 2127lines/mm in theory, it is impossible to further improved
Line density, feasibility is not high.The line density for improving grating is exactly to improve grating diffration ability, utilizes two non-flat line rasters
Optical grating diffraction ability can be improved, is CN106684702A in notification number, entitled " one kind realizes that semiconductor swashs using double grating
In the domestic patent of the device of light spectrum beam combination ", propose to be placed with two gratings are non-parallel, close Shu Danyuan twice by grating
Diffraction, although spectrum spectrum width is compressed by half, but improves grating diffration ability with two gratings, system
Degree of regulation and difficulty increase, grating cost price are high, and Linewidth is limited in one's ability.
The content of the invention
It is an object of the invention to overcome above-mentioned prior art not enough there is provided one kind using grating and reflecting element to realize two
Secondary diffraction compresses the spectrum beam combination device of spectrum width, is reflected incident beam using reflecting element, is acted on twice by optical grating diffraction,
Secondary dispersion is realized, grating diffration ability is doubled, output laser spectrum spectrum width compression half solves spectrum beam combination mistake
The problem of beam element number and limited power output being closed in journey.
The technical solution adopted for solving the technical problem of the present invention has two kinds, is respectively：
Scheme one：A kind of utilization grating realizes the spectrum beam combination device of the spectrum width of diffraction compression twice with reflecting element, including：
Semiconductor laser light source, slow axis collimation post lens, transform lenses, transmission grating, speculum and output coupling mirror；
Described semiconductor laser light source is located at before the front focus of described slow axis collimation post lens and transform lenses
In focus, described transmission grating is located at before the rear focus of transform lenses, and described semiconductor laser light source is multiple hairs
The collimated light beam of light unit, after collimating post collimated through slow axis, the central light beam that transformed lens are assembled is entered with Littrow angle
It is mapped on described transmission grating, the center diffracted beam after carrying out first time diffraction through the transmission grating is with Littrow angle outgoing
Afterwards, described speculum is incided, the center diffracted beam reflected through the speculum is again incident on described with Littrow angle
Penetrate on grating, and the relative position of speculum and transmission grating, it can guarantee that the hot spot incided on transmission grating is minimum, through transmission
The diffracted beam that grating is carried out after second of diffraction is impinged perpendicularly on described output coupling mirror, is realized and is closed beam output.
Scheme two：A kind of utilization grating realizes the spectrum beam combination device of the spectrum width of diffraction compression twice with reflecting element, including：
Semiconductor laser light source, slow axis collimation post lens, transform lenses, diffraction grating, right-angle prism and output coupling mirror；Described
Diffraction grating is divided into left and right two parts, and wherein half is transmission-type grating, and second half is reflective gratings；
Described semiconductor laser light source is located at before the front focus of described slow axis collimation post lens and transform lenses
In focus, described diffraction grating is located at before the rear focus of transform lenses, and described semiconductor laser light source is multiple hairs
The collimated light beam of light unit, after collimating post collimated through slow axis, the central light beam that transformed lens are assembled is entered with Littrow angle
The transmission-type grating being mapped on described diffraction grating carries out the center diffracted beam after first time diffraction, diffraction with Littrow angle
After outgoing, described right-angle prism is incided, the center diffracted beam reflected through the right-angle prism is incident again with Littrow angle
Onto the diffraction grating, and the relative position of the right-angle prism and diffraction grating, it can guarantee that the light incided on diffraction grating
Spot is minimum, and the diffracted beam after the reflective gratings through the diffraction grating carry out second of diffraction impinges perpendicularly on described output
On coupling mirror, realize and close beam output.
Laserresonator, light are formed between the rear facet and output coupling mirror of semiconductor laser array described in scheme one
Beam feedback oscillation in resonator.
The front facet plating anti-reflection film of semiconductor laser array described in scheme one, Cavity surface reflectivity is less than 1%, rear facet plating
High-reflecting film, Cavity surface reflectivity is more than 95%.
Described semiconductor laser light source include semiconductor laser array, the fast axis collimation post lens of front and rear placement and tiltedly
45 ° of cylindrical lens arrays, fast axis collimation post lens are used to collimate semiconductor laser array quick shaft direction light beam；Oblique 45 ° of post lens arrays
Output beam is rotated by 90 ° by row along the direction of propagation, exchanges fast axle and slow axis, will be closed Shu Fangxiang and is changed into fast axle, reduces smile effects
Tackle the influence of combined beam light beam quality；Slow-axis direction light beam after Beam rotation collimates post collimated by slow axis.
Semiconductor laser light source described in scheme one can use multiple laser elements collimated, or it is multiple collimated swash
Optical arrays, or it is multiple collimated laser array composition laser linear array or repeatedly battle array combination replace.
Transmission grating described in scheme one, screen periods are certain, are more than 90% in 1 grade or -1 order diffraction efficiency, its highest is spread out
The wavelength for penetrating the wavelength corresponding to efficiency and semiconductor laser matches；And the transmission grating is the unrelated grating of polarization, or
Person polarization direction and the polarization direction identical grating of semiconductor laser light source, and with high damage threshold.
Output coupling mirror described in scheme one is partially reflecting mirror, and reflectivity is 5%-30%, with passing through transmitted light for the second time
The diffraction light direction of grid is vertical, is lost at laser emission wavelength low.
Semiconductor laser light source, transform lenses, output coupling mirror are consistent with the explanation in scheme one described in scheme two.
Diffraction grating described in scheme two is divided into left and right two parts, and wherein half is transmission-type grating, and second half is reflective
Grating, screen periods are identical, are more than 90% in 1 grade or -1 order diffraction efficiency, the wavelength corresponding to its maximum diffraction efficiency and half
The wavelength of conductor laser matches.
Right-angle prism inclined-plane plating anti-reflection film described in scheme two, when the inclined-plane of light beam from prism is incident, light beam can be oblique
Experiences total internal reflection at the glass/air interface in face, by next right-angle surface when experiences total internal reflection, finally with it is parallel enter
The direction of irradiating light beam is from inclined-plane outgoing, as back mirror, and it is unrelated with the angle of incident beam that light beam produces 180 ° of deflections.
Compared with prior art, the present invention has the following technical effect that：
1) by the use of single grating as beam element is closed, with reference to reflecting element so that light beam passes through optical grating diffraction twice, realize
Secondary dispersion, grating dispersion ability is doubled.
2) under conditions of laser chamber length is constant, laser spectrum spectrum width can be made to shorten to original 1/2nd,
In the gain curve of semiconductor laser, and conjunction beam element number can be made in the wave-length coverage of the high-diffraction efficiency of grating
One times of lifting, power and brightness are doubled.
3) in the case where laser spectrum spectrum width keeps constant, the focal length of transform lenses can be made to reduce half so that chamber
Long to shorten half, laser structure is more compact and stably.
4) compression conjunction Shu Jiguang spectrum spectrum width can make the monochromaticjty of output laser more preferable, aberration reduction, close beam efficiency
Improve.
Brief description of the drawings
Fig. 1 is the schematic diagram for the spectrum beam combination embodiment 1 that the spectrum width of diffraction compression twice is realized using speculum.
Fig. 2 is light path schematic diagram of each combined beam light beam after transmission grating and speculum effect.
Fig. 3 is the structural representation of semiconductor laser light source.
Fig. 4 is the schematic diagram that the spectrum beam combination embodiment 2 of diffraction Linewidth twice is realized using right-angle prism.
Fig. 5 is light path schematic diagram of each light beam after diffraction grating and right-angle prism effect.
Fig. 6 is the structure composition schematic diagram of diffraction grating.
Fig. 7 is the output light spectral distribution graph that binding structure is closed using transmission spectra.
Fig. 8 is the spectral distribution graph of output beam of the present invention.
In figure, 1 is semiconductor laser light source；2 be that slow axis collimates post lens；3 be transform lenses；4 be transmission grating；4 ＇
For diffraction grating；5 be speculum；5 ＇ are right-angle prism；6 be output coupling mirror；7 be light beam twice after transmission grating 4；
7 ＇ are light beam twice after the ＇ of diffraction grating 4；8 and 8 ＇ export to close light beam after beam；901st, 902,903 be each laser cell
Light beam, the ＇ of 901 ＇, 902 ＇ 903 are each unit diffracted beam for the first time after grating is acted on；11 be semiconductor laser array；
12 be fast axis collimation post lens；13 be oblique 45 ° of cylindrical lens arrays；14 be the transmission-type grating in the ＇ of diffraction grating 4, and 15 be diffraction
Reflective gratings in the ＇ of grating 4.
Embodiment
Below in conjunction with drawings and examples, the present invention is further illustrated.
Embodiment 1：As shown in figure 1, Fig. 1 is the first embodiment of the invention, realized twice using grating and speculum
Diffraction compresses the spectrum beam combination device of spectrum width, and device includes semiconductor laser light source 1, slow axis collimation post lens 2, transform lenses
3rd, transmission grating 4, speculum 5, output coupling mirror 6.Semiconductor laser light source 1 is located at the front focus of transform lenses 3, transmitted light
Grid 4 are located at before the rear focus of transform lenses 3, and semiconductor laser light source 1 sends multi beam directional light.
As shown in Fig. 2 Fig. 2 is the mechanism of each luminescence unit of the invention and transmission grating 4 and speculum 5, each unit
Light beam is incided on transmission grating 4 after the convergence of transform lenses 3, and central light beam 902 is incident with Littrow angle, and remaining is incident
Light 901,903 is incided on transmission grating 4 with different angles, for the first time after transmission grating 4, and the ＇ of diffracted beam 902 is with Li Te
The outgoing of sieve angle, and neighboring diffraction beam angle difference is more half as large than incident beam angle subtractive, by parallel with transmission grating 4
After speculum 5 reflects, the ＇ of center diffracted beam 902 is incided on transmission grating 4 with Littrow angle again, moves forward and backward speculum 5
Position, each light beam for making to incide for the second time on transmission grating 4 is completely overlapped, and hot spot is minimum.Second by transmission grating 4
Diffraction after, the differential seat angle of diffracted beam 7 is zero, i.e., the angle of adjacent incident beam 901,902,903 is neighboring diffraction light beam
901 ＇, 902 ＇, twice of 903 ＇ angles.Diffracted beam 7 impinges perpendicularly on output coupling mirror 6 with the identical angle of diffraction, due to defeated
Go out the feedback effect of coupling mirror 6, laserresonator formed between the rear facet and output coupling mirror 6 of semiconductor laser light source 1,
Light beam feedback oscillation in laserresonator obtains laser beam 8 and exported.
As shown in figure 3, for semiconductor laser light source 1 of the present invention, including semiconductor laser array 11, fast axis collimation post
Lens 12 and oblique 45 ° of cylindrical lens arrays 13.Semiconductor laser array 11 includes multiple luminescence units, and each luminescence unit is equidistant
Arrangement, front facet reflectivity is less than 1%, and rear facet reflectivity is more than 95%, fast axis collimation post lens 12 and oblique 45 ° of post lens arrays
Row 13 are bonded together, and are fixed on before semiconductor laser array 11.
Embodiment 2：As shown in figure 4, Fig. 4 is second of embodiment of the invention, it is real using diffraction grating and right-angle prism
Now diffraction compresses the spectrum beam combination device of spectrum width twice, and device includes semiconductor laser light source 1, slow axis collimation post lens 2, become
Change lens 3, the ＇ of diffraction grating 4, the ＇ of right-angle prism 5, output coupling mirror 6.Semiconductor laser light source 1 is located at before transform lenses 3
Focus, the ＇ of diffraction grating 4 is located at before the rear focus of transform lenses 3, and semiconductor laser light source 1 sends multi beam directional light.
As shown in figure 5, Fig. 5 is the mechanism of each luminescence unit of the invention and the ＇ of the diffraction grating 4 and ＇ of right-angle prism 5, respectively
Unit is incided in the ＇ of diffraction grating 4 on transmission-type grating 14, the central light beam of combined beam light beam after the convergence of transform lenses 3
902 is incident with Littrow angle, and remainder light beam 901,903 is incident with different angles, after transmissive diffraction grating 14, diffraction light
The ＇ of beam 902 is with Littrow angle outgoing, and neighboring diffraction beam angle difference is half as large compared with incident beam adjacent angular subtractive, by with
After the ＇ retroreflections of right-angle prism 5, each diffracted beam is incided on the reflective gratings 15 in the ＇ of diffraction grating 4, center diffraction light
The ＇ of beam 902 is incided on the ＇ of diffraction grating 4 with Littrow angle again, is moved forward and backward the ＇ of right-angle prism 5 position, is made each light beam anti-
Penetrate completely overlapped on grating 15, hot spot is minimum.For the second time after the ＇ of diffraction grating 4 diffraction, the ＇ of diffracted beam 7 differential seat angle is
Zero, output coupling mirror 6 is then impinged perpendicularly on the identical angle of diffraction, due to the feedback effect of output coupling mirror 6, semiconductor swashs
Laserresonator is formed between the rear facet and output coupling mirror 6 of light device light source 1, light beam feedback oscillation in laserresonator is obtained
To the ＇ of laser beam 8 outputs.
As shown in fig. 6, structure charts of the Fig. 6 for the ＇ of diffraction grating 4 in embodiment of the present invention 2, ＇ points of diffraction grating 4 is a left side
Right two parts, wherein half are transmission-type grating 14, and another half is reflective gratings 15, and both screen periods are identical, at 1 grade or -1
Order diffraction efficiency is more than 90%, and the wavelength of wavelength and semiconductor laser corresponding to its maximum diffraction efficiency matches.To be inclined
Shake unrelated or polarization direction and laser polarization direction identical grating, with higher damage threshold.
The present invention realizes that the spectrum beam combination device of the spectrum width of diffraction compression twice implements process using grating and speculum
It is as follows：
The centre wavelength of semiconductor laser light source 1 is 940nm, comprising 19 luminescence units, single luminous point light beam
Fast axis divergence angle is 35 °, and slow axis divergence is 7 °, and light beam is after fast axis collimation post lens 12 and oblique 45 ° of cylindrical lens arrays 13
Fast axis divergence angle is compressed into about 0.5 °, and slow axis divergence is compressed into about 4 ° after slow axis collimation post lens 2.Laser
The front facet plating anti-reflection film of array, Cavity surface reflectivity is less than 0.5%, and rear facet plating high-reflecting film, Cavity surface reflectivity is more than 99%.
If the diffraction time of transmission grating 4 is 1 grade, diffraction efficiency is all higher than 90%, and screen periods are d, and unit light beam exists
Incidence angle on transmission grating 4 is respectively θ1, θ2……θ19, the angle of diffraction is respectively θd1, θd2……θd19, due to the dispersion of grating
Effect and the feedback of exocoel, each unit wavelength are monotonically changed with the difference of incidence angle, respectively λ1, λ2……λ19, just like
Lower relational expression：
λ1=d (sin θs1+sinθd1)；
λ2=d (sin θs2+sinθd2)；
……
λ19=d (sin θs19+sinθd19)。
Wherein, the difference of the incidence angle of arbitrary neighborhood unit light beam can be considered definite value Δ θ.Each unit light beam passes through speculum 5
Or after again through transmission grating 4 after, incidence angle is respectively θi1, θi2……θi19, the angle of emergence is θdi1,θdi2......θdi19。
Now the angle of arbitrary neighborhood unit light beam for the first time after transmission grating diffraction, which is differed, can be considered definite value, Δ θ '=Δ θ/
2 have following relational expression：
λ1=d (sin θsi1+sinθdi1)；
λ2=d (sin θsi2+sinθdi2)；
……
λ19=d (sin θsi19+sinθdi19)。
Because luminous point is locked in different wavelength, therefore there is identical diffraction angledi1=θdi2=...=θdi19.Such as
The output light spectrogram that fruit is obtained using monochromatic light grid single diffraction is as shown in fig. 7, spectrum spectrum width about 14nm, the present invention is closed after beam
The spectrogram of laser is exported as shown in figure 8, spectrum spectrum width is about 7nm, compared to the result of single diffraction, uses the present invention can be with
The diffraction twice of single grating is realized, output spectrum can be compressed to original 1/2nd.
In summary, the present invention utilizes grating combination reflecting element, incident beam is acted on twice by grating diffration,
Secondary dispersion is realized, grating utilization rate is doubled, and optical grating diffraction ability is doubled, output laser spectrum is wide to be halved, Ke Yi
It is that the spectrum beam combination of more multi-illuminating unit creates conditions, it is possible to achieve multiple partly to lead in the high-diffraction efficiency wave-length coverage of grating
The spectrum beam combination of volumetric laser array, therefore, this utilization reflecting element realize the spectrum beam combination device of the spectrum width of diffraction compression twice
It is the effective way for obtaining the output of high power high luminance laser, with significant application value.
Claims (8)
1. a kind of utilization grating realizes the spectrum beam combination device of the spectrum width of diffraction compression twice with reflecting element, it is characterised in that bag
Include：Semiconductor laser light source (1), slow axis collimation post lens (2), transform lenses (3), transmission grating (4), speculum (5) and
Output coupling mirror (6)；
Described semiconductor laser light source (1) is located at the front focus and transform lenses (3) of described slow axis collimation post lens (2)
Front focus on, described transmission grating (4) is located at before the rear focus of transform lenses (3), described semiconductor laser light
Source (1) is the collimated light beam of multiple luminescence units, after collimating post lens (2) collimation through slow axis, during transformed lens (3) are assembled
Heart light beam is incided with Littrow angle on described transmission grating (4), after carrying out first time diffraction through the transmission grating (4) in
After heart diffracted beam is with Littrow angle outgoing, described speculum (5) is incided, the center diffraction reflected through the speculum (5)
Light beam is again incident on the transmission grating (4) with Littrow angle, and the relative position of speculum (5) and transmission grating (4),
It can guarantee that the hot spot incided on transmission grating (4) is minimum, the diffracted beam after carrying out second of diffraction through transmission grating (4) hangs down
It is straight to incide on described output coupling mirror (6), realize and close beam output.
2. a kind of utilization grating realizes the spectrum beam combination device of the spectrum width of diffraction compression twice with reflecting element, it is characterised in that bag
Include：Semiconductor laser light source (1), slow axis collimation post lens (2), transform lenses (3), diffraction grating (4 ＇), right-angle prism
(5 ＇) and output coupling mirror (6)；Described diffraction grating (4 ＇) is divided into left and right two parts, and wherein left part is divided into transmission-type grating
(14), right part is divided into reflective gratings (15)；
Described semiconductor laser light source (1) is located at the front focus and transform lenses (3) of described slow axis collimation post lens (2)
Front focus on, described diffraction grating (4 ＇) is located at before the rear focus of transform lenses (3), described semiconductor laser light
Source (1) is the collimated light beam of multiple luminescence units, after collimating post lens (2) collimation through slow axis, during transformed lens (3) are assembled
The transmission-type grating (14) that heart light beam is incided with Littrow angle on described diffraction grating (4 ＇) carries out first time diffraction, diffraction
After center diffracted beam afterwards is with Littrow angle outgoing, described right-angle prism (5 ＇) is incided, it is anti-through the right-angle prism (5 ＇)
The center diffracted beam penetrated is again incident on the diffraction grating (4 ＇) with Littrow angle, and the right-angle prism (5 ＇) and diffraction
The relative position of grating (4 ＇), can guarantee that the hot spot incided on diffraction grating (4 ＇) is minimum, through the anti-of the diffraction grating (4 ＇)
The diffracted beam penetrated after formula grating (15) second of diffraction of progress is impinged perpendicularly on described output coupling mirror (6), is realized and is closed
Beam is exported.
3. utilization grating according to claim 1 or 2 realizes the spectrum beam combination of the spectrum width of diffraction compression twice with reflecting element
Device, it is characterised in that：Described semiconductor laser light source (1) includes the fast axle placed before and after semiconductor laser array (11)
Collimate post lens (12) and oblique 45 ° of cylindrical lens arrays (13), the rear facet of described semiconductor laser array (11) and output
Laserresonator, light beam feedback oscillation in laserresonator, described semiconductor laser array are formed between coupling mirror (6)
(11) light beam of quick shaft direction is collimated by fast axis collimation post lens (12), is rotated by oblique 45 ° of cylindrical lens arrays (13), exchanges fast
After axle and slow axis, the light beam of slow-axis direction collimates post lens (2) by slow axis and collimated.
4. utilization grating according to claim 3 realizes that the spectrum beam combination of the spectrum width of diffraction compression twice is filled with reflecting element
Put, it is characterised in that：Described semiconductor laser array (11) includes multiple luminescence units, and each luminescence unit is equidistantly arranged
Row, the front facet of described semiconductor laser array (11) plates anti-reflection film, and Cavity surface reflectivity is less than 1%, and rear facet plating is high anti-
Film, Cavity surface reflectivity is more than 95%.
5. utilization grating according to claim 1 realizes that the spectrum beam combination of the spectrum width of diffraction compression twice is filled with reflecting element
Put, it is characterised in that：Described transmission grating (4) is more than 90%, corresponding to its maximum diffraction efficiency in 1 or -1 order diffraction efficiency
The wavelength of wavelength and semiconductor laser light source (1) match, and described transmission grating (4) is polarizes unrelated grating, or
Person polarization direction and the polarization direction identical grating of semiconductor laser light source (1), and with high damage threshold.
6. utilization grating according to claim 2 realizes that the spectrum beam combination of the spectrum width of diffraction compression twice is filled with reflecting element
Put, it is characterised in that：Described diffraction grating (4 ＇) includes left and right two parts, and wherein half is transmission-type grating (14), another
Half is reflective gratings (15), and screen periods are identical, is more than 90%, its maximum diffraction efficiency institute in 1 grade or -1 order diffraction efficiency
The wavelength of corresponding wavelength and semiconductor laser matches, and described diffraction grating (4 ＇) is the unrelated grating of polarization, or
Polarization direction and the polarization direction identical grating of semiconductor laser light source, and with high damage threshold.
7. utilization grating according to claim 2 realizes that the spectrum beam combination of the spectrum width of diffraction compression twice is filled with reflecting element
Put, it is characterised in that：Described right-angle prism (5 ＇) inclined-plane plating anti-reflection film, when the inclined-plane of light beam from right-angle prism (5 ＇) is incident
When, light beam finally can be with the direction of parallel entrance beam from inclined-plane outgoing, as back mirror, and light beam produces 180 ° partially
Turn, the angle with incident beam is unrelated.
8. the spectrum beam combination of the spectrum width of diffraction compression twice is realized with reflecting element according to any described use gratings of claim 1-7
Device, it is characterised in that：The output coupling mirror (6) is partially reflecting mirror, and reflectivity is 5%-30%, with second by saturating
The diffraction light direction for penetrating grating (4) or diffraction grating (4 ＇) is vertical.
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