CN107272214B - The spectrum beam combination device of the spectrum width of diffraction compression twice is realized using grating and reflecting element - Google Patents

The spectrum beam combination device of the spectrum width of diffraction compression twice is realized using grating and reflecting element Download PDF

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CN107272214B
CN107272214B CN201710541892.XA CN201710541892A CN107272214B CN 107272214 B CN107272214 B CN 107272214B CN 201710541892 A CN201710541892 A CN 201710541892A CN 107272214 B CN107272214 B CN 107272214B
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grating
diffraction
semiconductor laser
spectrum
incident
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CN107272214A (en
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于娜
周常河
韦春龙
周权
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Shanghai Institute of Optics and Fine Mechanics of CAS
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Shanghai Institute of Optics and Fine Mechanics of CAS
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10Beam splitting or combining systems
    • G02B27/1006Beam splitting or combining systems for splitting or combining different wavelengths

Abstract

A kind of lasing spectrum of semiconductor lasers beam merging apparatus for realizing the spectrum width of diffraction compression twice using grating and reflecting element, including semiconductor laser light source, slow axis collimate cylindrical lens, transform lens, grating, reflecting element, output coupling mirror.Using single grating as diffraction element, reflecting element will be reflected by grating diffration light beam the present invention for the first time, again by grating, light beam be carried out secondary dispersion, dispersive power doubles.By the feedback of output coupling mirror, each unit laser of semiconductor laser array is locked in different wave length respectively, obtains the laser output of high power high luminance.The present invention overcomes the limitations that transmission spectra closes the gain line width pairing beam element number of gain material in beam, combined beam unit can be increased in gain line width and within the scope of the high efficiency diffraction wavelength of grating, significantly improve output power, or cavity length is reduced in the case where spectrum width is certain, keep laser structure compact, improves zlasing mode stability.

Description

The spectrum beam combination device of the spectrum width of diffraction compression twice is realized using grating and reflecting element
Technical field
The present invention relates to semiconductor laser technique field more particularly to a kind of utilization grating and reflecting elements, pass through exocoel Feedback realizes the lasing spectrum of semiconductor lasers beam merging apparatus of narrow linewidth high power laser light output.
Background technique
Semiconductor laser has at low cost, and the service life is long, and small in size, high reliability is widely used to industry Processing, pumping, medical treatment, the fields such as communication.A key factor for restricting semiconductor laser future development is exactly brightness.Laser The brightness of light beam is determined that power is bigger by output power and beam quality, and beam quality is better, and brightness is higher.
Closing beam technology is the current conventional means for realizing high brightness semiconductor laser, and wherein spectrum beam combination is a kind of novelty Conjunction beam technology, mainly using grating as diffraction element, C.C.Cook and T.Y.Fan[ASSL.26,163-166 (1999)] This method is reported for the first time and its principle is discussed in detail.The oscillation wavelength of each luminescence unit with grating dispersion and External cavity feedback matching is realized to keep the identical angle of diffraction to be emitted and closes beam.The advantages of spectrum beam combination, is: by multiple single tubes half The output combiner of conductor laser, output power is the summation of all luminescence unit power, while beam quality is sent out with single Light unit is consistent, and greatly improves the brightness of semiconductor laser, realizes the laser output of nearly diffraction limit.Therefore, Spectrum beam combination technology has become an important topic in high-power semiconductor laser field.
Spectrum beam combination is that the conjunction beam mode of laser power and brightness is improved to widen spectrum as cost, therefore spectrum beam combination Laser spectrum spectrum width after closing beam should be compressed as much as possible in the process, thus in the gain line width of gain material and grating is efficient Increase more combined beam units in rate bandwidth, this is the key that improve spectrum beam combination power and brightness.
How to compress close beam laser spectrum spectrum width be increase combined beam unit quantity main problem, spectrum spectrum width by it is multiple because Element determines, mainly there is a following three classes: 1. reduce the spacing of adjacent combined beam unit, can prepare high-density semiconductor laser array or Person compresses combined beam unit spacing using optical imaging system, but is limited to semiconductor technology, increases the string between different units It disturbs, cannot feed back completely, reduce and close beam efficiency;2. increasing the focal length of transform lens, but close the length and coupler of beam system Length can increase therewith, the volume of system can become larger and the stability of resonance cavity system can decline, and whole light path increases, It is easier to that crosstalk occurs between each combined beam unit in the case where the angle of divergence is constant;3. the line density for improving grating reduces grating week Phase, but screen periods are limited by semiconductor laser wavelength, and minimum screen periods cannot be less than the half of wavelength, it is assumed that half Conductor laser wavelength is 940nm, then theoretically the highest line density of grating is 2127lines/mm, can not further be improved Line density, feasibility be not high.The line density for improving grating is exactly to improve grating diffration ability, utilizes two non-flat line rasters Optical grating diffraction ability can be improved, be CN106684702A in notification number, it is entitled " a kind of to realize that semiconductor swashs using double grating In the domestic patent of the device of light spectrum beam combination ", two non-parallel placements of grating are proposed, combined beam unit passes through grating twice Diffraction improves grating diffration ability with two gratings although spectrum spectrum width is compressed by half, system Degree of regulation and difficulty increase, and grating cost price is high, and Linewidth ability is limited.
Summary of the invention
It is an object of the invention to overcome the above-mentioned prior art insufficient, provides and a kind of realize two using grating and reflecting element The spectrum beam combination device of secondary diffraction compression spectrum width, incident beam is reflected, act on by optical grating diffraction twice using reflecting element, Realize secondary dispersion, grating diffration ability doubles, and output laser spectrum spectrum width compresses half, solves spectrum beam combination mistake Combined beam unit quantity and the limited problem of output power in journey.
There are two types of the technical solution adopted for solving the technical problem of the present invention, is respectively as follows:
A kind of scheme one: spectrum beam combination device for realizing the spectrum width of diffraction compression twice using grating and reflecting element, comprising: Semiconductor laser light source, slow axis collimation cylindrical lens, transform lens, transmission grating, reflecting mirror and output coupling mirror;
Before the semiconductor laser light source is located at front focus and the transform lens of the slow axis collimation cylindrical lens In focus, the transmission grating is located at before the rear focus of transform lens, and the semiconductor laser light source is multiple hairs The collimated light beam of light unit, after slow axis collimation cylindrical lens collimation, the central light beam that transformed lens are assembled is entered with Littrow angle It is mapped on the transmission grating, the center diffracted beam after the transmission grating carries out first time diffraction is emitted with Littrow angle Afterwards, it is incident on the reflecting mirror, the center diffracted beam reflected through the reflecting mirror is again incident on described with Littrow angle It penetrates on grating, and the relative position of reflecting mirror and transmission grating, can guarantee the hot spot being incident on transmission grating minimum, through transmiting Diffracted beam after grating second of diffraction of progress impinges perpendicularly on the output coupling mirror, realizes and closes beam output.
A kind of scheme two: spectrum beam combination device for realizing the spectrum width of diffraction compression twice using grating and reflecting element, comprising: Semiconductor laser light source, slow axis collimation cylindrical lens, transform lens, diffraction grating, right-angle prism and output coupling mirror;Described Diffraction grating is divided into left and right two parts, and wherein half is transmission-type grating, the other half is reflective gratings;
Before the semiconductor laser light source is located at front focus and the transform lens of the slow axis collimation cylindrical lens In focus, the diffraction grating is located at before the rear focus of transform lens, and the semiconductor laser light source is multiple hairs The collimated light beam of light unit, after slow axis collimation cylindrical lens collimation, the central light beam that transformed lens are assembled is entered with Littrow angle The transmission-type grating being mapped on the diffraction grating carries out first time diffraction, and the center diffracted beam after diffraction is with Littrow angle After outgoing, it is incident on the right-angle prism, the center diffracted beam reflected through the right-angle prism is incident again with Littrow angle Onto the diffraction grating, and the relative position of the right-angle prism and diffraction grating, it can guarantee the light being incident on diffraction grating Spot is minimum, and the diffracted beam after the reflective gratings of the diffraction grating carry out second of diffraction impinges perpendicularly on the output On coupling mirror, realizes and close beam output.
Laser resonator, light are formed between the rear facet and output coupling mirror of semiconductor laser array described in scheme one Beam feedback oscillation in resonant cavity.
The front cavity surface of semiconductor laser array described in scheme one plates anti-reflection film, and Cavity surface reflectivity is less than 1%, rear facet plating High-reflecting film, Cavity surface reflectivity are greater than 95%.
The semiconductor laser light source include semiconductor laser array, front and back place fast axis collimation cylindrical lens and tiltedly 45 ° of cylindrical lens arrays, fast axis collimation cylindrical lens are for collimating semiconductor laser array fast axis direction light beam;Oblique 45 ° of cylindrical lens battle arrays Output beam is rotated by 90 ° by column along the direction of propagation, exchanges fast axle and slow axis, will be closed Shu Fangxiang and is changed into fast axle, reduces smile effect Cope with the influence of combined beam light beam quality;Slow-axis direction light beam after Beam rotation is by slow axis collimation cylindrical lens collimation.
Semiconductor laser light source described in scheme one can with multiple laser elements collimated or it is multiple collimated swash The laser linear array or the repeatedly combination replacement of battle array of optical arrays or multiple laser array compositions collimated.
Transmission grating described in scheme one, screen periods are certain, are greater than 90% in 1 grade or -1 grade of diffraction efficiency, highest is spread out The wavelength for penetrating wavelength corresponding to efficiency and semiconductor laser matches;And the transmission grating is the unrelated grating of polarization, or Person polarization direction grating identical with the polarization direction of semiconductor laser light source, and there is high damage threshold.
Output coupling mirror described in scheme one is partially reflecting mirror, and reflectivity 5%-30% passes through transmitted light with second The diffraction light direction of grid is vertical, is lost at laser emission wavelength low.
Semiconductor laser light source described in scheme two, transform lens, output coupling mirror are consistent with the explanation in scheme one.
Diffraction grating described in scheme two is divided into left and right two parts, and wherein half is transmission-type grating, the other half is reflective Grating, screen periods are identical, are greater than 90% in 1 grade or -1 grade of diffraction efficiency, wavelength corresponding to maximum diffraction efficiency and half The wavelength of conductor laser matches.
Right-angle prism inclined-plane described in scheme two plates anti-reflection film, and when inclined-plane incidence of the light beam from prism, light beam can be oblique Experiences total internal reflection at the glass/air interface in face, experiences total internal reflection when by next right-angle surface, finally to enter in parallel The direction of irradiating light beam is emitted from inclined-plane, and as back mirror, it is unrelated with the angle of incident beam that light beam generates 180 ° of deflections.
Compared with prior art, the present invention has the following technical effect that
1) it using single grating as beam element is closed, in conjunction with reflecting element, so that light beam passes through optical grating diffraction twice, realizes Secondary dispersion, grating dispersion ability double.
2) under conditions of laser chamber is long constant, laser spectrum spectrum width can be made to shorten to original half, In the gain curve of semiconductor laser, and combined beam unit quantity can be made in the wave-length coverage of the high-diffraction efficiency of grating One times is promoted, power and brightness double.
3) in the case where laser spectrum spectrum width remains unchanged, the focal length of transform lens can be made to reduce half, so that chamber Long to shorten half, laser structure is more compact and stablizes.
4) the spectrum spectrum width that Shu Jiguang is closed in compression can make the monochromaticjty for exporting laser more preferable, and color difference reduces, and close beam efficiency It improves.
Detailed description of the invention
Fig. 1 is the schematic diagram that the spectrum beam combination embodiment 1 of the spectrum width of diffraction compression twice is realized using reflecting mirror.
Fig. 2 is light path schematic diagram of each combined beam light beam after transmission grating and reflecting mirror effect.
Fig. 3 is the structural schematic diagram of semiconductor laser light source.
Fig. 4 is the schematic diagram that the spectrum beam combination embodiment 2 of diffraction Linewidth twice is realized using right-angle prism.
Fig. 5 is light path schematic diagram of each light beam after diffraction grating and right-angle prism effect.
Fig. 6 is the structure composition schematic diagram of diffraction grating.
Fig. 7 is the output light spectral distribution graph that binding structure is closed using transmission spectra.
Fig. 8 is the spectral distribution graph of output beam of the present invention.
In figure, 1 is semiconductor laser light source;2 collimate cylindrical lens for slow axis;3 be transform lens;4 be transmission grating;4 ' For diffraction grating;5 be reflecting mirror;5 ' are right-angle prism;6 be output coupling mirror;7 be the light beam after transmission grating 4 twice; 7 ' are the light beam after 4 ' of diffraction grating twice;8 and 8 ' are that light beam exports after closing beam;901,902,903 be each laser cell Light beam, 901 ', 902 ', 903 ' are each unit diffracted beam of the first time after grating acts on;11 be semiconductor laser array; 12 be fast axis collimation cylindrical lens;13 be oblique 45 ° of cylindrical lens arrays;14 be the transmission-type grating in 4 ' of diffraction grating, and 15 be diffraction Reflective gratings in 4 ' of grating.
Specific embodiment
Below in conjunction with drawings and examples, the present invention is further illustrated.
Embodiment 1: as shown in FIG. 1, FIG. 1 is the first embodiments of the invention, are realized twice using grating and reflecting mirror Diffraction compresses the spectrum beam combination device of spectrum width, and device includes semiconductor laser light source 1, slow axis collimation cylindrical lens 2, transform lens 3, transmission grating 4, reflecting mirror 5, output coupling mirror 6.Semiconductor laser light source 1 is located at the front focus of transform lens 3, transmitted light Grid 4 are located at before the rear focus of transform lens 3, and semiconductor laser light source 1 issues multi beam directional light.
As shown in Fig. 2, Fig. 2 is the mechanism of the present invention each luminescence unit and transmission grating 4 and reflecting mirror 5, each unit Light beam is incident on transmission grating 4 after the convergence of transform lens 3, and for central light beam 902 with Littrow angle incidence, remaining is incident Light 901,903 is incident on transmission grating 4 with different angle, and for the first time after transmission grating 4,902 ' of diffracted beam is with Li Te The outgoing of sieve angle, and neighboring diffraction beam angle difference is half of incident beam angle subtractive, by parallel with transmission grating 4 After reflecting mirror 5 reflects, diffracted beam 902 ' in center is incident on transmission grating 4 with Littrow angle again, is moved forward and backward reflecting mirror 5 Position, keep each light beam being incident on transmission grating 4 for the second time completely overlapped, hot spot is minimum.Second by transmission grating 4 Diffraction after, the differential seat angle of diffracted beam 7 is zero, i.e., the angle of adjacent incident beam 901,902,903 is neighboring diffraction light beam 901 ', 902 ', twice of 903 ' angles.Diffracted beam 7 impinges perpendicularly on output coupling mirror 6 with the identical angle of diffraction, due to defeated The feedback effect of coupling mirror 6 out forms laser resonator between the rear facet and output coupling mirror 6 of semiconductor laser light source 1, Light beam feedback oscillation in laser resonator obtains the output of laser beam 8.
As shown in figure 3, being semiconductor laser light source 1 of the present invention, including semiconductor laser array 11, fast axis collimation column Lens 12 and oblique 45 ° of cylindrical lens arrays 13.Semiconductor laser array 11 includes multiple luminescence units, and each luminescence unit is equidistant Arrangement, front cavity surface reflectivity is less than 1%, and rear facet reflectivity is greater than 95%, fast axis collimation cylindrical lens 12 and oblique 45 ° of cylindrical lens battle arrays Column 13 bond together, and before being fixed on semiconductor laser array 11.
Embodiment 2: as shown in figure 4, Fig. 4 is second of embodiment of the invention, it is real using diffraction grating and right-angle prism The now spectrum beam combination device of the spectrum width of diffraction compression twice, device include semiconductor laser light source 1, slow axis collimation cylindrical lens 2, become Change lens 3,4 ' of diffraction grating, 5 ' of right-angle prism, output coupling mirror 6.Before semiconductor laser light source 1 is located at transform lens 3 Focus, 4 ' of diffraction grating are located at before the rear focus of transform lens 3, and semiconductor laser light source 1 issues multi beam directional light.
As shown in figure 5, Fig. 5 is the mechanism of the present invention each luminescence unit and 5 ' of 4 ' of diffraction grating and right-angle prism, respectively Unit is incident in 4 ' of diffraction grating on transmission-type grating 14, the central light beam of combined beam light beam after the convergence of transform lens 3 902 with Littrow angle incidence, and remainder light beam 901,903 is with different angle incidence, after transmissive diffraction grating 14, diffraction light 902 ' of beam is emitted with Littrow angle, and neighboring diffraction beam angle difference is half compared with incident beam adjacent angular subtractive, by with After 5 ' retroreflection of right-angle prism, each diffracted beam is incident on the reflective gratings 15 in 4 ' of diffraction grating, center diffraction light 902 ' of beam is incident on 4 ' of diffraction grating with Littrow angle again, is moved forward and backward the position of 5 ' of right-angle prism, is made each light beam anti- Penetrate completely overlapped on grating 15, hot spot minimum.For the second time after the diffraction of 4 ' of diffraction grating, the differential seat angle of 7 ' of diffracted beam is Zero, output coupling mirror 6 is then impinged perpendicularly on the identical angle of diffraction, due to the feedback effect of output coupling mirror 6, semiconductor swashs Laser resonator is formed between the rear facet and output coupling mirror 6 of light device light source 1, light beam feedback oscillation in laser resonator obtains It is exported to 8 ' of laser beam.
As shown in fig. 6, Fig. 6 is the structure chart of 4 ' of diffraction grating in embodiment of the present invention 2,4 ' of diffraction grating points are a left side Right two parts, wherein half is transmission-type grating 14, and another half is reflective gratings 15, and the two screen periods are identical, at 1 grade or -1 Greater than 90%, the wavelength of wavelength corresponding to maximum diffraction efficiency and semiconductor laser matches grade diffraction efficiency.It is inclined Shake unrelated or polarization direction grating identical with laser polarization direction, damage threshold with higher.
The present invention realizes that the spectrum beam combination device of the spectrum width of diffraction compression twice implements process using grating and reflecting mirror It is as follows:
The central wavelength of semiconductor laser light source 1 is 940nm, includes 19 luminescence units, single luminous point light beam Fast axis divergence angle is 35 °, and slow axis divergence is 7 °, and light beam is after fast axis collimation cylindrical lens 12 and oblique 45 ° of cylindrical lens arrays 13 Fast axis divergence angle is compressed into about 0.5 °, and slow axis divergence is compressed into about 4 ° after slow axis collimates cylindrical lens 2.Laser The front cavity surface of array plates anti-reflection film, and for Cavity surface reflectivity less than 0.5%, rear facet plates high-reflecting film, and Cavity surface reflectivity is greater than 99%.
If the diffraction time of transmission grating 4 is 1 grade, diffraction efficiency is all larger than 90%, and screen periods d, unit light beam exists Incidence angle on transmission grating 4 is respectively θ1, θ2……θ19, the angle of diffraction is respectively θd1, θd2……θd19, due to the dispersion of grating The feedback of effect and exocoel, each unit wavelength are monotonically changed with the difference of incidence angle, respectively λ1, λ2……λ19, just like Lower relational expression:
λ1=d (sin θ1+sinθd1);
λ2=d (sin θ2+sinθd2);
……
λ19=d (sin θ19+sinθd19)。
Wherein, the difference of the incidence angle of arbitrary neighborhood unit light beam can be considered definite value Δ θ.Each unit light beam passes through reflecting mirror 5 After or again through transmission grating 4 after, incidence angle is respectively θi1, θi2……θi19, angle of emergence θdi1di2......θdi19。 The angle of arbitrary neighborhood unit light beam of the first time after transmission grating diffraction, which differs, at this time can be considered definite value, Δ θ '=Δ θ/ 2 have following relational expression:
λ1=d (sin θi1+sinθdi1);
λ2=d (sin θi2+sinθdi2);
……
λ19=d (sin θi19+sinθdi19)。
Since luminous point is locked in different wavelength, there is identical diffraction angledi1di2=...=θdi19.Such as The output light spectrogram that fruit is obtained using monochromatic light grid single diffraction is as shown in fig. 7, spectrum spectrum width is about 14nm, after the present invention closes beam The spectrogram of laser is exported as shown in figure 8, spectrum spectrum width is about 7nm, compared to single diffraction as a result, using the present invention can be with It realizes the diffraction twice of single grating, output spectrum can be compressed to original half.
In conclusion the present invention utilizes grating combination reflecting element, incident beam is made to pass through grating diffration effect twice, Realize secondary dispersion, grating utilization rate doubles, and optical grating diffraction ability doubles, and output laser spectrum width halves, Ke Yi It in the high-diffraction efficiency wave-length coverage of grating, creates conditions for the spectrum beam combination of more multi-illuminating unit, may be implemented multiple partly to lead The spectrum beam combination of volumetric laser array, therefore, this spectrum beam combination device that the spectrum width of diffraction compression twice is realized using reflecting element It is the effective way for obtaining the output of high power high luminance laser, there is significant application value.

Claims (8)

1. a kind of spectrum beam combination device for realizing the spectrum width of diffraction compression twice using grating and reflecting element, it is characterised in that packet Include: semiconductor laser light source (1), slow axis collimation cylindrical lens (2), transform lens (3), transmission grating (4), reflecting mirror (5) and Output coupling mirror (6);
The semiconductor laser light source (1) is located at the front focus and transform lens (3) of slow axis collimation cylindrical lens (2) Front focus on, the transmission grating (4) is located at before the rear focus of transform lens (3), the semiconductor laser light Source (1) is the collimated light beam of multiple luminescence units, after slow axis collimation cylindrical lens (2) collimation, in transformed lens (3) convergence Heart light beam is incident on the transmission grating (4) with Littrow angle, after the transmission grating (4) carries out first time diffraction in After heart diffracted beam is emitted with Littrow angle, it is incident on the reflecting mirror (5), the center diffraction reflected through the reflecting mirror (5) Light beam is again incident on the transmission grating (4) with Littrow angle, and the relative position of reflecting mirror (5) and transmission grating (4), It can guarantee that the hot spot being incident on transmission grating (4) is minimum, the diffracted beam after transmission grating (4) carry out second of diffraction hangs down It is directly incident on the output coupling mirror (6), realizes and close beam output.
2. a kind of spectrum beam combination device for realizing the spectrum width of diffraction compression twice using grating and reflecting element, it is characterised in that packet It includes: semiconductor laser light source (1), slow axis collimation cylindrical lens (2), transform lens (3), diffraction grating (4 '), right-angle prism (5 ') and output coupling mirror (6);The diffraction grating (4 ') is divided into left and right two parts, and wherein left part is divided into transmission-type grating (14), right part is divided into reflective gratings (15);
The semiconductor laser light source (1) is located at the front focus and transform lens (3) of slow axis collimation cylindrical lens (2) Front focus on, the diffraction grating (4 ') is located at before the rear focus of transform lens (3), the semiconductor laser light Source (1) is the collimated light beam of multiple luminescence units, after slow axis collimation cylindrical lens (2) collimation, in transformed lens (3) convergence Heart light beam is incident on the transmission-type grating (14) on the diffraction grating (4 ') with Littrow angle and carries out first time diffraction, diffraction After center diffracted beam afterwards is emitted with Littrow angle, it is incident on the right-angle prism (5 '), it is anti-through the right-angle prism (5 ') The center diffracted beam penetrated is again incident on the diffraction grating (4 ') with Littrow angle, and the right-angle prism (5 ') and diffraction The relative position of grating (4 ') can guarantee that the hot spot being incident on diffraction grating (4 ') is minimum, through the anti-of the diffraction grating (4 ') Diffracted beam after penetrating second of diffraction of formula grating (15) progress impinges perpendicularly on the output coupling mirror (6), realizes and closes Beam output.
3. the spectrum beam combination according to claim 1 or 2 for realizing the spectrum width of diffraction compression twice using grating and reflecting element Device, it is characterised in that: the semiconductor laser light source (1) includes the fast axle of placement before and after semiconductor laser array (11) Collimate cylindrical lens (12) and oblique 45 ° of cylindrical lens arrays (13), the rear facet of the semiconductor laser array (11) and output Laser resonator, light beam feedback oscillation in laser resonator, the semiconductor laser array are formed between coupling mirror (6) (11) light beam of fast axis direction is collimated by fast axis collimation cylindrical lens (12), is rotated by oblique 45 ° of cylindrical lens arrays (13), and exchange is fast After axis and slow axis, the light beam of slow-axis direction is by slow axis collimation cylindrical lens (2) collimation.
4. according to claim 3 realize that the spectrum beam combination of the spectrum width of diffraction compression twice fills using grating and reflecting element It sets, it is characterised in that: the semiconductor laser array (11) includes multiple luminescence units, and each luminescence unit is equidistantly arranged The front cavity surface of column, the semiconductor laser array (11) plates anti-reflection film, and for Cavity surface reflectivity less than 1%, rear facet plating is high anti- Film, Cavity surface reflectivity are greater than 95%.
5. according to claim 1 realize that the spectrum beam combination of the spectrum width of diffraction compression twice fills using grating and reflecting element It sets, it is characterised in that: the transmission grating (4) is greater than 90% in 1 or -1 grade of diffraction efficiency, corresponding to maximum diffraction efficiency The wavelength of wavelength and semiconductor laser light source (1) match, and the transmission grating (4) be polarize unrelated grating, or Person polarization direction grating identical with the polarization direction of semiconductor laser light source (1), and there is high damage threshold.
6. according to claim 2 realize that the spectrum beam combination of the spectrum width of diffraction compression twice fills using grating and reflecting element It sets, it is characterised in that: the diffraction grating (4 ') includes left and right two parts, and wherein half is transmission-type grating (14), another Half is reflective gratings (15), and screen periods are identical, is greater than 90% in 1 grade or -1 grade of diffraction efficiency, maximum diffraction efficiency institute The wavelength of corresponding wavelength and semiconductor laser matches, and the diffraction grating (4 ') is the unrelated grating of polarization, or Polarization direction grating identical with the polarization direction of semiconductor laser light source, and there is high damage threshold.
7. according to claim 2 realize that the spectrum beam combination of the spectrum width of diffraction compression twice fills using grating and reflecting element It sets, it is characterised in that: the right-angle prism inclined-plane (5 ') plates anti-reflection film, when light beam is incident from the inclined-plane of right-angle prism (5 ') When, light beam can be finally emitted with the direction of parallel entrance beam from inclined-plane, and as back mirror, light beam generates 180 ° partially Turn, it is unrelated with the angle of incident beam.
8. according to claim 1 or 2 or 4-7 is any described grating and reflecting element is utilized to realize the spectrum width of diffraction compression twice Spectrum beam combination device, it is characterised in that: the output coupling mirror (6) is partially reflecting mirror, reflectivity 5%-30%, with second The secondary diffraction light direction by transmission grating (4) or diffraction grating (4 ') is vertical.
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