CN110109259A - The beam merging apparatus of semiconductor laser high light beam quality high-power output - Google Patents
The beam merging apparatus of semiconductor laser high light beam quality high-power output Download PDFInfo
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- CN110109259A CN110109259A CN201910340977.0A CN201910340977A CN110109259A CN 110109259 A CN110109259 A CN 110109259A CN 201910340977 A CN201910340977 A CN 201910340977A CN 110109259 A CN110109259 A CN 110109259A
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
- G02B27/1006—Beam splitting or combining systems for splitting or combining different wavelengths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
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- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Semiconductor Lasers (AREA)
Abstract
The invention discloses a kind of beam merging apparatus of semiconductor laser high light beam quality high-power output, comprising: N number of to close beam subsystem and the grating pair for the beamlet of N number of conjunction beam subsystem output close beam；Closing beam subsystem includes fast axis collimation mirror, slow axis collimating mirror, transform lens, the first grating and the outgoing mirror that semiconductor laser is folded battle array and set gradually along the optical path direction that semiconductor laser folds the emergent light of battle array；Grating is to including the second grating and third grating arranged in parallel.The present invention forms external cavity semiconductor laser first with exocoel and semiconductor laser rear facet, different combined beam units is set to be locked in different wavelength, recycle the dispersion interaction of grating, each semiconductor laser is folded into the laser beam of paroxysm out in space overlap into a branch of output, good beam quality can be kept horizontal while promoting output power, beam quality in this way after conjunction beam is greatly improved, and realizes the conjunction beam output of high power and high beam quality.
Description
Technical field
The present invention relates to high-power semiconductor laser applied technical field, in particular to a kind of semiconductor laser high beam matter
Measure the beam merging apparatus of high-power output.
Background technique
Semiconductor laser is a kind of electro-optical conversioning device that development in the late five decades is fast, science infiltration is wide, in industry
There is important application in the fields such as processing, military defense, optic communication.However, due to its waveguiding structure and device packaging technology etc. because
The limitation of element, the beam quality gap in speed axis direction is larger, such as common cm bar item, the light beam of slow-axis direction
Quality is thousands of times of fast axis direction, and output beam quality is caused to be deteriorated.Although it is defeated to be able to achieve higher-wattage using folded battle array structure
Out, but it is limited to that aquaporin sectional area in micro-channel heat sink is small and hydraulic pressure drop, the laser number of plies cannot be infinitely superimposed in laser stacking array,
50 layers are usually no more than, to limit the further promotion of power, this makes it difficult to direct as the light source of hectowatt, multikilowatt
Using.Therefore, high power how is obtained simultaneously, the semiconductor laser output of high light beam quality has become international important technical
Bottleneck.
Summary of the invention
In view of the above-mentioned deficiencies in the prior art, the technical problem to be solved by the present invention is that it is sharp to provide a kind of semiconductor
The beam merging apparatus of light high light beam quality high-power output.
In order to solve the above technical problems, the technical solution adopted by the present invention is that: a kind of semiconductor laser high light beam quality is high
The beam merging apparatus of power output, comprising: N number of to close beam subsystem and the beamlet for exporting N number of conjunction beam subsystem
Close the grating pair of beam；
The beam subsystem that closes includes the light that semiconductor laser folds battle array and the emergent light along the folded battle array of the semiconductor laser
Fast axis collimation mirror, slow axis collimating mirror, transform lens, the first grating and the outgoing mirror that road direction is set gradually；
The grating is to including the second grating and third grating arranged in parallel；
The light that the folded paroxysm of the semiconductor laser goes out successively after the fast axis collimation mirror, slow axis collimating mirror, passes through institute
It states transform lens and is converted into different incident angles and project on first grating, the emergent light of different laminations is through described first
Beam is closed with identical angle of diffraction after optical grating diffraction and forms beamlet, then is output to second grating through the outgoing mirror；It is N number of
The beamlet for closing the output of beam subsystem is incident on second grating, is again incident in the same position of the third grating
Overlapping is generated, beam output is closed with identical shooting angle after the third optical grating diffraction.
Preferably, the center of the fast axis collimation mirror, slow axis collimating mirror, transform lens, the first grating is with described half
The center that conductor Laser folds battle array is located along the same line.
Preferably, the outgoing mirror is arranged perpendicular to -1 grade of diffraction direction of first grating.
Preferably, the semiconductor laser fold battle array different laminations emergent light after first optical grating diffraction with
The identical angle of -1 grade of diffraction direction of first grating closes beam and forms beamlet, then exports through the outgoing mirror.
Preferably, the beamlet of portions incident is reflected back into the semiconductor laser according to former road and folded by the outgoing mirror
Battle array, to realize that the semiconductor laser folds the locking of battle array output wavelength.
Preferably, the semiconductor laser folds the power adjustable of battle array, and the wave-length coverage of the light issued is 400nm-
1550nm。
Preferably, which includes 2 conjunction beam subsystems, and 2 beamlets for closing the output of beam subsystem are direct
It is incident on second grating.
Preferably, which further includes N number of reflecting mirror, for by it is each it is described close beam subsystem output son
Light beam reflexes to second grating.
The beneficial effects of the present invention are: the beam merging apparatus of semiconductor laser high light beam quality high-power output of the invention is first
External cavity semiconductor laser is formed using exocoel and semiconductor laser rear facet, is locked in different combined beam units different
Wavelength recycles the dispersion interaction of grating, and each semiconductor laser is folded the laser beam of paroxysm out in space overlap at a branch of defeated
Out, good beam quality can be kept horizontal while promoting output power, the beam quality after conjunction beam obtains in this way
Greatly improve, realizes the conjunction beam output of high power and high beam quality.
Detailed description of the invention
Fig. 1 is the knot of the beam merging apparatus of the semiconductor laser high light beam quality high-power output in the embodiment of the present invention 1
Structure schematic diagram；
Fig. 2 is the knot of the beam merging apparatus of the semiconductor laser high light beam quality high-power output in the embodiment of the present invention 1
Structure schematic diagram.
Description of symbols:
1-semiconductor laser folds battle array；2-fast axis collimation mirrors；3-slow axis collimating mirrors；4-transform lens；5-the first light
Grid；6-outgoing mirrors；7-the second grating；8-third gratings；9-close Shu Jiguang；10-beamlets；11-reflecting mirrors；12-close
Shu Jiguang.
Specific embodiment
The present invention will be further described in detail below with reference to the embodiments, to enable those skilled in the art referring to specification
Text can be implemented accordingly.
It should be appreciated that such as " having ", "comprising" and " comprising " term used herein are not precluded one or more
The presence or addition of a other elements or combinations thereof.
As shown in Figs. 1-2, the beam merging apparatus of a kind of semiconductor laser high light beam quality high-power output of the present embodiment, packet
Include N number of conjunction beam subsystem and the grating pair for the beamlet of N number of conjunction beam subsystem output close beam；
Closing beam subsystem includes the optical path direction that semiconductor laser folds battle array 1 and folds the emergent light of battle array 1 along semiconductor laser
Fast axis collimation mirror 2, slow axis collimating mirror 3, transform lens 4, the first grating 5 and the outgoing mirror 6 set gradually；
Grating is to including the second grating 7 and third grating 8 arranged in parallel；
The light that the folded battle array 1 of semiconductor laser issues successively after fast axis collimation mirror 2, slow axis collimating mirror 3, passes through transform lens
4, which are converted into different incident angles, projects on the first grating 5, and the emergent light of different laminations is after 5 diffraction of the first grating with phase
Same angle of diffraction closes beam and forms beamlet, then is output to the second grating 7 through outgoing mirror 6；The son of N number of output for closing beam subsystem
Light beam is incident on the second grating 7, is again incident in the same position of third grating 8 and generates overlapping, after 8 diffraction of third grating
Beam output is closed with identical shooting angle.
The present invention folds the laser of battle array output first with Grating-cavity spectrum beam combination technology to the semiconductor that beam quality is poor
Shaping is carried out, to reach high light beam quality output.Then orthopedic folded battle array a to N (N >=2) is closed using aperture technique altogether
Beam so closing beam is able to maintain high light beam quality, while having reached high-power output since bigrating structures compensate for dispersion again
Purpose.Beam quality in this way after conjunction beam is greatly improved, and then realizes high light beam quality output.
Wherein, semiconductor laser folds the power adjustable of battle array 1, and the wave-length coverage of the light issued is 400nm-1550nm.Fastly
Axis collimating mirror 2, slow axis collimating mirror 3, transform lens 4, the first grating 5 center with semiconductor laser fold center be located at it is same
On straight line.Fast axis collimation mirror 2, slow axis collimating mirror 3 compress the angle of divergence of fast and slow axis to milliradian magnitude respectively.
Wherein, outgoing mirror 6 is arranged perpendicular to -1 grade of diffraction direction of the first grating 5.The difference that semiconductor laser folds battle array 1 is folded
The emergent light of layer closes beam after 5 diffraction of the first grating with angle identical with -1 grade of diffraction direction of the first grating 5 and forms sub-light
Beam, then exported through outgoing mirror 6.Since the partial feedback of outgoing mirror 6 acts on, outgoing mirror 6 is by the beamlet of portions incident according to original
Road reflection (successively passing through the first grating 5, transform lens 4, slow axis collimating mirror 3, fast axis collimation mirror 2) returns semiconductor laser and folds battle array 1,
To realize that semiconductor laser folds the locking (even if different combined beam units is locked in different wavelength) of 1 output wavelength of battle array.Folded battle array
Rear end face and the outgoing mirror 6 of -1 grade of diffraction direction form exterior resonant cavity, the light beam of feedback forms vibration in exterior resonant cavity
It swings, due to the effect of gain competition, different combined beam units all operates at different wavelengths, and the beamlet exported will be in
Heart unit is in grating to upper realization space overlapping, i.e. power is superimposed, each output beam light having the same for closing beam subsystem
Beam quality, combination output beam spatial brightness are relatively closed Shu Qianhui and are obviously increased, and the raising of folded battle array output beam quality is realized.
Due to being limited to, heat sink interior aquaporin sectional area is small and hydraulic pressure drop, the laser stacking array number of plies cannot infinitely increase (general
Lower than 50 layers), thus it is limited to promote output power.The identical subsystem of N number of parameter (according to actual needs may be used by the present invention thus
Selection N (N >=2) a subsystem) beamlet of output carries out conjunction beam using double grating, and double grating, which closes beam technology, both reduces laser
The control requirement of line width, phase etc., and good beam quality can be kept horizontal while promoting output power, thus
Realize the laser output of the high power and high beam quality of whole system.
Specific embodiment presented below, with the present invention will be further described.
Embodiment 1
Referring to Fig.1, in the present embodiment, the beam merging apparatus of semiconductor laser high light beam quality high-power output includes 2 conjunctions
Beam subsystem: the identical conjunction beam subsystem I of structure and conjunction beam subsystem II, the beamlet of the outputs of 2 conjunction beam subsystems are straight
Access is mapped on the second grating 7.Close the beamlet and the outgoing mirror 6 for closing beam subsystem II that the outgoing mirror 6 in beam subsystem I exports
The beamlet of output is directly incident on the second grating 7 of grating centering.In order to make beamlet obtain higher diffraction efficiency,
Littrow angle of the incidence angle of beamlet as close as possible to the second grating 7 at blaze wavelength.Second grating 7 and third grating 8 are flat
Row is placed, and third grating 8 is effectively compensated the dispersion generated to the second grating 7.The dispersion of second grating 7 makes different waves
1 grade of diffracted beam of long beamlet, which is incident in the same position of the identical third grating 8 of parameter, generates overlapping, using
After the diffraction of third grating 8, output beam shooting angle having the same after the conjunction beam of different wave length beamlet obtains closing Shu Ji
Light 9 finally realizes the total aperture Spectral beam combining output of 2 road different wave length beamlets, greatly improves total output of system
Power.The dispersion compensation functions that third grating 8 generates the second grating 7, it is ensured that system synthesis light beam can get higher matter
Amount is horizontal, it is achieved that the conjunction beam of the high power and high beam quality of whole system exports.
Since folded battle array power is limited by the superposition number of plies, the power of single folded battle array is difficult to meet high-power applications field.
For hoisting power, subsystem II identical with subsystem I structure using double grating is subjected to conjunction beam, realizes power superposition,
To improve output general power.The program had not only reduced the control requirement of the laser linewidth of pairing beam, phase etc., but also
Good beam quality can be kept horizontal while promoting output power.
Embodiment 2
Referring to Fig. 2, in the present embodiment, the number N for closing beam subsystem be greater than 2 (N number of structure for closing beam subsystem is all the same,
And with it is also identical in above-described embodiment, as shown in dotted-line ellipse frame), and semiconductor laser high light beam quality high-power output
Beam merging apparatus further includes N number of reflecting mirror 11, and N number of reflecting mirror 11 is corresponded with N number of conjunction beam subsystem, is used for each conjunction Shu Zi
The beamlet 10 of the output of system reflexes to the second grating 7.I.e. each beamlet 10 for closing the output of beam subsystem passes through one
Reflecting mirror 11 reflexes on the second grating 7, and the dispersion of the second grating 7 makes 1 grade of diffracted beam incidence of different wave length beamlet 10
It generates and is overlapped on to the same position of the identical third grating 8 of parameter, after the diffraction using third grating 8, different waves
Output beam shooting angle having the same after the conjunction beam of long beamlet 10 obtains closing Shu Jiguang 12, finally realizes the road N difference
The total aperture Spectral beam combining of wavelength beamlet 10 exports, and greatly improves the gross output of system.
Although the embodiments of the present invention have been disclosed as above, but its is not only in the description and the implementation listed
With it can be fully applied to various fields suitable for the present invention, for those skilled in the art, can be easily
Realize other modification, therefore without departing from the general concept defined in the claims and the equivalent scope, the present invention is simultaneously unlimited
In specific details.
Claims (8)
1. a kind of beam merging apparatus of semiconductor laser high light beam quality high-power output characterized by comprising N number of conjunction Shu Zi
System and for by it is described it is N number of close beam subsystem output beamlet carry out close beam grating pair；
The beam subsystem that closes includes the optical path side that semiconductor laser folds battle array and the emergent light along the folded battle array of the semiconductor laser
To fast axis collimation mirror, slow axis collimating mirror, transform lens, the first grating and the outgoing mirror set gradually；
The grating is to including the second grating and third grating arranged in parallel；
The light that the folded paroxysm of the semiconductor laser goes out successively after the fast axis collimation mirror, slow axis collimating mirror, passes through the change
It changes lens and is converted into different incident angles and project on first grating, the emergent light of different laminations is through first grating
Beam is closed with identical angle of diffraction after diffraction and forms beamlet, then is output to second grating through the outgoing mirror；N number of conjunction beam
The beamlet of the output of subsystem is incident on second grating, is again incident in the same position of the third grating and generates
Overlapping closes beam output after the third optical grating diffraction with identical shooting angle.
2. the beam merging apparatus of semiconductor laser high light beam quality high-power output according to claim 1, which is characterized in that
The fast axis collimation mirror, slow axis collimating mirror, transform lens, the first grating center with the semiconductor laser fold centre bit
In on same straight line.
3. the beam merging apparatus of semiconductor laser high light beam quality high-power output according to claim 2, which is characterized in that
The outgoing mirror is arranged perpendicular to -1 grade of diffraction direction of first grating.
4. the beam merging apparatus of semiconductor laser high light beam quality high-power output according to claim 3, which is characterized in that
The emergent light of the different laminations of the folded battle array of the semiconductor laser is after first optical grating diffraction with -1 with first grating
The identical angle of grade diffraction direction closes beam and forms beamlet, then exports through the outgoing mirror.
5. the beam merging apparatus of semiconductor laser high light beam quality high-power output according to claim 4, which is characterized in that
The beamlet of portions incident is reflected back into the semiconductor laser according to former road and folds battle array by the outgoing mirror, described is partly led with realizing
Volumetric laser folds the locking of battle array output wavelength.
6. the beam merging apparatus of semiconductor laser high light beam quality high-power output according to claim 5, which is characterized in that
The semiconductor laser folds the power adjustable of battle array, and the wave-length coverage of the light issued is 400nm-1550nm.
7. according to claim 1 in -6 any one semiconductor laser high light beam quality high-power output beam merging apparatus,
It is characterized in that, the beam merging apparatus includes 2 conjunction beam subsystems, 2 beamlets for closing the output of beam subsystem are directly incident on
On second grating.
8. according to claim 1 in -6 any one semiconductor laser high light beam quality high-power output beam merging apparatus,
It is characterized in that, the beam merging apparatus further includes N number of reflecting mirror, for the beamlet of each output for closing beam subsystem is anti-
It is incident upon second grating.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111266727A (en) * | 2020-04-09 | 2020-06-12 | 东莞市迈创机电科技有限公司 | Ultrahigh-power laser space beam combining module and control system thereof |
| CN112157345A (en) * | 2020-09-27 | 2021-01-01 | 华夏鲲鹏科技股份有限公司 | Multi-wavelength laser beam combining device |
| CN113253472A (en) * | 2021-05-28 | 2021-08-13 | 武汉光谷航天三江激光产业技术研究院有限公司 | Reference light generating device and method for light beam synthesis system |
| CN113258415A (en) * | 2021-05-28 | 2021-08-13 | 武汉光谷航天三江激光产业技术研究院有限公司 | Pulse laser spectrum time sequence synthesis system and method |
| CN114428408A (en) * | 2021-12-24 | 2022-05-03 | 中国科学院长春光学精密机械与物理研究所 | Multi-path semiconductor laser spatial modulation coherent beam combining device |
| CN114994933A (en) * | 2022-07-19 | 2022-09-02 | 中国科学院长春光学精密机械与物理研究所 | Spectrum beam combining device and method |
| CN115061286A (en) * | 2022-07-19 | 2022-09-16 | 中国科学院长春光学精密机械与物理研究所 | Spectrum beam combining device and method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104332821A (en) * | 2014-11-18 | 2015-02-04 | 中国工程物理研究院应用电子学研究所 | Diode laser spectrum synthesizer based on double-grating external cavity feedback |
| CN104901149A (en) * | 2015-05-05 | 2015-09-09 | 中国科学院上海光学精密机械研究所 | Spectral beam combining system based on three diffraction gratings |
| CN105591282A (en) * | 2016-03-10 | 2016-05-18 | 山西省交通科学研究院 | Wavelength-tunable semiconductor laser based on parallel grating external-cavity |
| CN105811245A (en) * | 2016-05-18 | 2016-07-27 | 上海高意激光技术有限公司 | Laser array beam combining device |
| CN106532435A (en) * | 2017-01-05 | 2017-03-22 | 苏州长光华芯光电技术有限公司 | Semiconductor laser array beam combining device |
| CN107453206A (en) * | 2017-09-01 | 2017-12-08 | 中国科学院长春光学精密机械与物理研究所 | A kind of semiconductor laser spectrum beam combination system |
-
2019
- 2019-04-25 CN CN201910340977.0A patent/CN110109259A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104332821A (en) * | 2014-11-18 | 2015-02-04 | 中国工程物理研究院应用电子学研究所 | Diode laser spectrum synthesizer based on double-grating external cavity feedback |
| CN104901149A (en) * | 2015-05-05 | 2015-09-09 | 中国科学院上海光学精密机械研究所 | Spectral beam combining system based on three diffraction gratings |
| CN105591282A (en) * | 2016-03-10 | 2016-05-18 | 山西省交通科学研究院 | Wavelength-tunable semiconductor laser based on parallel grating external-cavity |
| CN105811245A (en) * | 2016-05-18 | 2016-07-27 | 上海高意激光技术有限公司 | Laser array beam combining device |
| CN106532435A (en) * | 2017-01-05 | 2017-03-22 | 苏州长光华芯光电技术有限公司 | Semiconductor laser array beam combining device |
| CN107453206A (en) * | 2017-09-01 | 2017-12-08 | 中国科学院长春光学精密机械与物理研究所 | A kind of semiconductor laser spectrum beam combination system |
Non-Patent Citations (1)
| Title |
|---|
| 马毅 等: ""基于双光栅的光纤激光光谱合成关键技术研究进展"", 《红外与激光工程》, vol. 47, no. 1, pages 0103002 - 1 * |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111266727A (en) * | 2020-04-09 | 2020-06-12 | 东莞市迈创机电科技有限公司 | Ultrahigh-power laser space beam combining module and control system thereof |
| CN111266727B (en) * | 2020-04-09 | 2022-03-18 | 东莞市迈创机电科技有限公司 | Ultrahigh-power laser space beam combining module and control system thereof |
| CN112157345A (en) * | 2020-09-27 | 2021-01-01 | 华夏鲲鹏科技股份有限公司 | Multi-wavelength laser beam combining device |
| CN113253472A (en) * | 2021-05-28 | 2021-08-13 | 武汉光谷航天三江激光产业技术研究院有限公司 | Reference light generating device and method for light beam synthesis system |
| CN113258415A (en) * | 2021-05-28 | 2021-08-13 | 武汉光谷航天三江激光产业技术研究院有限公司 | Pulse laser spectrum time sequence synthesis system and method |
| CN113253472B (en) * | 2021-05-28 | 2021-11-09 | 武汉光谷航天三江激光产业技术研究院有限公司 | Reference light generating device and method for light beam synthesis system |
| CN114428408A (en) * | 2021-12-24 | 2022-05-03 | 中国科学院长春光学精密机械与物理研究所 | Multi-path semiconductor laser spatial modulation coherent beam combining device |
| CN114994933A (en) * | 2022-07-19 | 2022-09-02 | 中国科学院长春光学精密机械与物理研究所 | Spectrum beam combining device and method |
| CN115061286A (en) * | 2022-07-19 | 2022-09-16 | 中国科学院长春光学精密机械与物理研究所 | Spectrum beam combining device and method |
| CN114994933B (en) * | 2022-07-19 | 2022-10-21 | 中国科学院长春光学精密机械与物理研究所 | Spectrum beam combining device and method |
| CN115061286B (en) * | 2022-07-19 | 2023-08-22 | 中国科学院长春光学精密机械与物理研究所 | Spectrum beam combining device and method |
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Address after: Science and Technology City kolding road high tech Zone of Suzhou City, Jiangsu Province, No. 88 215163 Applicant after: Suzhou Institute of Biomedical Engineering and Technology Chinese Academy of Sciences Applicant after: Suzhou Guoke medical technology development (Group) Co., Ltd Address before: Science and Technology City kolding road high tech Zone of Suzhou City, Jiangsu Province, No. 88 215163 Applicant before: Suzhou Institute of Biomedical Engineering and Technology Chinese Academy of Sciences Applicant before: SUZHOU GUOKE MEDICAL TECHNOLOGY DEVELOPMENT Co.,Ltd. |