CN107453206A - A kind of semiconductor laser spectrum beam combination system - Google Patents
A kind of semiconductor laser spectrum beam combination system Download PDFInfo
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- CN107453206A CN107453206A CN201710779625.6A CN201710779625A CN107453206A CN 107453206 A CN107453206 A CN 107453206A CN 201710779625 A CN201710779625 A CN 201710779625A CN 107453206 A CN107453206 A CN 107453206A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4075—Beam steering
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Abstract
This application discloses a kind of semiconductor laser spectrum beam combination system, the semiconductor laser spectrum beam combination system diffraction grating replaces the rear facet of laser as reflective optical devices, so that the semiconductor laser in rear facet without setting high-reflecting film, so that the semiconductor laser of some wave bands can realize the purpose of outgoing high power laser light within the system, meet laser and close beam request, improve the beam quality of shoot laser.
Description
Technical field
The application is related to field of laser device technology, more specifically to a kind of semiconductor laser spectrum beam combination system.
Background technology
Laser (Light Amplification by Stimulated Emission of Radiation, LASER),
The characteristics of going with coherence with brightness height, directionality, monochromaticjty, extensively using the every field in production and living.
In all kinds of lasers for producing laser, semiconductor laser has high efficiency, small size, high life and is easy to collect
Into the advantages that, but semiconductor laser unit device is often present that power is smaller, the angle of divergence is larger, beam quality it is impossible to meet
The problems such as industrial and military demand, thus need to solve the above problems by closing the method for beam.
In the semiconductor laser spectrum beam combination system of main flow now, the rear metope in semiconductor devices is generally required for
High-reflecting film is set, but due to the characteristics of high-reflecting film is easy to fall off and membrane system is thicker so that for the semiconductor laser of some wave bands
For device, set high-reflecting film relatively difficult to achieve in rear facet, or cause semiconductor laser after rear facet coats high-reflecting film
Performance becomes worse, it is difficult to meets use demand, is also unfavorable for the conjunction beam process in later stage.
The content of the invention
In order to solve the above technical problems, the invention provides a kind of semiconductor laser spectrum beam combination system, to realize nothing
The purpose that high-reflecting film is achievable spectrum beam combination process need to be set in the rear facet of semiconductor laser.
To realize above-mentioned technical purpose, the embodiments of the invention provide following technical scheme：
A kind of semiconductor laser spectrum beam combination system, applied to the laser system with multiple semiconductor lasers, often
Second exit facet of the individual semiconductor laser and the first exit facet surface have antireflective film, the semiconductor laser spectrum
Closing beam system includes：First collimating module, the second collimating module, Fourier transform lens, diffraction grating, filter mode structure and output
Coupling mirror；Wherein,
Second collimating module, Fourier transform lens and the diffraction grating are arranged in the semiconductor laser successively
Second exit facet side；
First collimating module and output coupling mirror are arranged in the first exit facet one of the semiconductor laser successively
Side；
The collimating module is used to carry out collimation processing to the shoot laser of the semiconductor laser；
The Fourier transform lens is used to carry out Fourier transformation processing to the laser by collimating processing；
The central optical axis of the central optical axis of the diffraction grating and the Fourier transform lens are set into predetermined angle, with
Make the laser after Fourier transformation is handled equal with the angle of diffraction of the diffraction grating in the incidence angle of the diffraction grating,
The diffraction grating is used for the laser lock-on of the exit face of semiconductor laser second in preset wavelength, and along former light
Road returns, with forming pending laser after the sharp combiner of the exit face of semiconductor laser first；
The filter mode structure is used to filter the preset mode in the pending laser, with improving laser quality
The output coupling mirror is used to after handling the pending laser of incidence be emitted, to obtain shoot laser.
Optionally, first collimating module includes N number of sub- collimation unit, and it is accurate that second collimating module includes N number of son
Straight unit；
The sub- collimation unit includes the fast axis collimation set gradually along the semiconductor laser exit facet central optical axis
Mirror and slow axis collimating mirror；
The fast axis collimation mirror has antireflective film away from the side surface of semiconductor laser one；
The slow axis collimating mirror has antireflective film away from the side surface of semiconductor laser one；
N is equal to the quantity of the semiconductor laser, described in sub- collimation unit in a collimating module and one
Semiconductor laser is corresponding.
Optionally, the fast axis collimation mirror, the both side surface of slow axis collimating mirror are respectively provided with antireflective film；
The output coupling mirror has antireflective film, the output coupling mirror back of the body towards the side surface of semiconductor laser one
There is reflectance coating from the side surface of semiconductor laser one.
Optionally, in addition to：Speculum；
The reflecting surface of the speculum is set towards the diffraction grating, for reflecting 0 order diffraction of the diffraction grating
Light, so that the 0 order diffraction light original optical path returns.
Optionally, the reflectivity of the reflectance coating of the speculum meets laser starting of oscillation requirement.
Optionally, the filter mode structure includes：D types speculum and spatial filter；Wherein,
The D types speculum is set towards first collimating module, and the spatial filter is arranged at the D types reflection
Mirror deviates from the first collimating module side.
Optionally, the filter mode structure includes：The first grating and the second grating be arrangeding in parallel；
First grating and the second grating diffration face are oppositely arranged, the exit face of semiconductor laser first
Laser after collimation is handled, successively by the reflection filter mould output coupling backward of first grating and the second grating
Mirror is emitted.
Optionally, the filter structure includes：D types speculum, spatial filter, the first grating and the second grating；Wherein,
The central optical axis of the speculum and spatial filter overlap, first grating and the second grating diffration face phase
Pair and be arranged in parallel；
The laser of the exit facet of semiconductor laser first after collimation is handled, successively by first grating,
The reflection filter mould of second grating, and the backward output coupling mirror of the filter mould of the D types speculum and spatial filter processing
Outgoing.
Optionally, first grating is reflection-type grating or diffraction gratings；
Second grating is reflection-type grating or diffraction gratings.
It can be seen from the above technical proposal that the embodiments of the invention provide a kind of semiconductor laser spectrum beam combination system
System, the semiconductor laser spectrum beam combination system diffraction grating replace the rear facet of laser as reflective optical devices,
So that the semiconductor laser need not set high-reflecting film in rear facet, so that the semiconductor laser of some wave bands is at this
The purpose of outgoing high power laser light can be realized in system, laser is met and closes beam request, improve the light beam matter of shoot laser
Amount.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
The embodiment of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can also basis
The accompanying drawing of offer obtains other accompanying drawings.
Fig. 1 is a kind of structural representation for semiconductor laser spectrum beam combination system that one embodiment of the application provides
Figure；
Fig. 2 is a kind of structural representation for semiconductor laser spectrum beam combination system that another embodiment of the application provides
Figure；
Fig. 3 is a kind of structural representation for filter mode structure that one embodiment of the application provides；
Fig. 4 is a kind of structural representation for filter mode structure that another embodiment of the application provides；
Fig. 5 is a kind of structural representation for filter mode structure that another embodiment of the application provides.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not made
Embodiment, belong to the scope of protection of the invention.
The embodiment of the present application provides a kind of semiconductor laser spectrum beam combination system, as shown in figure 1, more applied to having
The laser system of individual semiconductor laser, the second exit facet of each semiconductor laser and the first exit facet surface have
Antireflective film, the semiconductor laser spectrum beam combination system include：First collimating module 100, the second collimating module 200, Fu Li
Leaf transformation lens 300, diffraction grating 400, filter mode structure 500 and output coupling mirror 600；Wherein,
Second collimating module 200, Fourier transform lens 300 and diffraction grating 400 are arranged in successively described partly leads
Second exit facet side of body laser；
First collimating module 100, output coupling mirror 600 and the filter mode structure 500 are arranged in described partly lead successively
First exit facet side of body laser；
The collimating module is used to carry out collimation processing to the shoot laser of the semiconductor laser；
The Fourier transform lens 300 is used to carry out Fourier transformation processing to the laser by collimating processing；
The central optical axis of the central optical axis of the diffraction grating 400 and the Fourier transform lens 300 are into predetermined angle
Set, so that incidence angle and the diffraction grating 400 of the laser after Fourier transformation is handled in the diffraction grating 400
The angle of diffraction it is equal, the diffraction grating 400 be used for the laser lock-on of the exit face of semiconductor laser second is existed
Preset wavelength, and returned along original optical path, to be treated with being formed after the sharp combiner of the exit face of semiconductor laser first
Handle laser；
The filter mode structure 500 is used to filter the preset mode in the pending laser, with improving laser quality；
The output coupling mirror 600 is used to after handling the pending laser of incidence be emitted, to obtain shoot laser.
With reference to figure 1, the laser of the exit face of semiconductor laser second passes through the collimation of the second collimating module 200
After processing, its fast axis divergence angle and slow axis divergence are compressed, and are gone out in quick shaft direction and slow-axis direction in the form of nearly directional light
Penetrate, the laser of these outgoing focuses on the table of diffraction grating 400 after the Fourier transformation processing of Fourier transform lens 300
Face, diffraction grating 400 is placed with blaze angle (Littrow angles), so that the laser after Fourier transformation is handled spreads out described
The incidence angle for penetrating grating 400 is equal with the angle of diffraction of the diffraction grating 400；According to the equation 2d sin of diffraction grating 400
θLittrow=m λ, wherein, m is diffraction time, and λ is the wavelength that the semiconductor laser is locked, θLittrowIt is right for blaze angle
In reflection-type diffraction grating 400, in general, diffraction time m takes -1 grade, and the wavelength of different semiconductor lasers is locked in
λ1、λ2…λn, also there is the pattern for improving semiconductor laser；The laser reflected by diffraction grating 400 returns along original optical path
Return, with forming pending laser after the sharp combiner of the exit face of semiconductor laser first；It is described pending sharp
Light realizes resonance and the output of laser after the processing of the output coupling mirror 600.
The diffraction efficiency of the diffraction grating 400 is preferably greater than or equal to 95%.
The reflectivity of the antireflective film on the semiconductor laser surface is preferably smaller than 1%.
It should be noted that the semiconductor laser spectrum beam combination system diffraction grating 400 is used as reflective optical devices
To replace the rear facet of laser so that the semiconductor laser in rear facet without setting high-reflecting film, so that some
The semiconductor laser of wave band can realize the purpose of outgoing high power laser light within the system, meet laser and close beam request,
Improve the beam quality of shoot laser.
On the basis of above-described embodiment, in one embodiment of the application, appoint right reference chart 1, first collimation
Module 100 includes N number of sub- collimation unit M10, and second collimating module 200 includes N number of sub- collimation unit M10；
The fast axle that the sub- collimation unit M10 includes setting gradually along the semiconductor laser exit facet central optical axis is accurate
Straight mirror M11 and slow axis collimating mirror M12；
The fast axis collimation mirror M11 has antireflective film away from the side surface of semiconductor laser one；
The slow axis collimating mirror M12 has antireflective film away from the side surface of semiconductor laser one；
N is equal to the quantity of the semiconductor laser, the sub- collimation unit M10 and a semiconductor laser
Device is corresponding.
Optionally, the fast axis collimation mirror M11, slow axis collimating mirror M12 both side surface are respectively provided with antireflective film；
The output coupling mirror 600 has antireflective film, the output coupling towards the side surface of semiconductor laser one
Mirror 600 has reflectance coating away from the side surface of semiconductor laser one.
The fast axis collimation mirror M11, slow axis collimating mirror M12 and the antireflective film on the surface of output coupling mirror 600 reflectivity are excellent
Choosing is less than 1%, and the preferred span of the reflectivity of the reflectance coating on the surface of output coupling mirror 600 is 9%-60%.This Shen
Please this is not limited, specifically depending on actual conditions.
On the basis of above-described embodiment, as shown in Fig. 2 the semiconductor laser spectrum beam combination system also includes：Instead
Penetrate mirror 700；
The reflecting surface of the speculum 700 is set towards the diffraction grating 400, for reflecting the diffraction grating 400
0 order diffraction light so that the 0 order diffraction light original optical path return.
Preferably, the reflectivity of the speculum 700 is more than 99%, reflection of the speculum 700 to 0 order diffraction light,
Be advantageous to improve the beam quality of the laser of the semiconductor laser outgoing.
It should be noted that with reference to figure 3, Fig. 4 and Fig. 5, the feasible configurations of the filter mode structure 500 can be：
1st, include with reference to figure 3, the filter structure：D types speculum 501 and spatial filter 502；Wherein,
The D types speculum 501 is set towards first collimating module 100, and the spatial filter 502 is arranged at institute
State D types speculum 501 and deviate from the side of the first collimating module 100.
This structure is also known as double grating filter mode structure 500, and in this configuration, laser is successively reflected by the D types
Mirror 501 and spatial filter 502, realize the filtering of the feedback and partial mode of partial mode so that by spatial filter 502
Laser there is less pattern.
2nd, include with reference to figure 4, the filter mode structure 500：The first grating 504 and the second grating 503 be arrangeding in parallel；
The diffraction surfaces of the grating 503 of first grating 504 and second are oppositely arranged, and the semiconductor laser first is emitted
The laser of face outgoing is backward by the reflection filter mould of the grating 503 of the first grating 504 and second successively after collimation is handled
The output coupling mirror 600 is emitted.
The also known as off-axis filter mode structure 500 of this structure, in this configuration, the grating of the first grating 504 and second
503 can be reflection-type grating, can also be diffraction gratings；When the grating 503 of the first grating 504 and second is reflection
During type grating, the laser incident angle of the first grating 504 and the second grating 503 will deviate the blaze angle setting of grating, when described
When first grating 504 and the second grating 503 are transmission-type grating, the laser light incident angle of the first grating 504 and the second grating 503
Degree needs to be arranged to the blaze angle of grating.
3rd, include with reference to figure 5, the filter structure：D types speculum 501, spatial filter 502, the first grating 504 and
Two gratings 503；Wherein,
The central optical axis of the speculum 700 and spatial filter 502 overlap, the grating of the first grating 504 and second
503 diffraction surfaces are relative and be arranged in parallel；
The laser of the exit facet of semiconductor laser first is after collimation is handled, successively by first grating
504th, the reflection filter mould of the second grating 503, and the filter mould of the D types speculum 501 and spatial filter 502 handle backward institute
Output coupling mirror 600 is stated to be emitted.
The application is not limited the specific composition of the filter structure, specifically depending on actual conditions.
In summary, the embodiment of the present application provides a kind of semiconductor laser spectrum beam combination system, and the semiconductor swashs
Light device spectrum beam combination system diffraction grating 400 replaces the rear facet of laser as reflective optical devices so that described partly to lead
Body laser in rear facet without setting high-reflecting film, so that the semiconductor laser of some wave bands within the system can be real
Reveal the purpose for penetrating high power laser light, meet laser and close beam request, improve the beam quality of shoot laser.
Each embodiment is described by the way of progressive in this specification, what each embodiment stressed be and other
The difference of embodiment, between each embodiment identical similar portion mutually referring to.
The foregoing description of the disclosed embodiments, professional and technical personnel in the field are enable to realize or using the present invention.
A variety of modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and principles disclosed herein and features of novelty phase one
The most wide scope caused.
Claims (9)
1. a kind of semiconductor laser spectrum beam combination system, it is characterised in that applied to swashing with multiple semiconductor lasers
Photosystem, the second exit facet of each semiconductor laser and the first exit facet surface have antireflective film, the semiconductor
Laser spectrum, which closes beam system, to be included：First collimating module, the second collimating module, Fourier transform lens, diffraction grating, filter mould
Structure and output coupling mirror；Wherein,
Second collimating module, Fourier transform lens and the diffraction grating are arranged in the second of the semiconductor laser successively
Exit facet side；
First collimating module and output coupling mirror are arranged in the first exit facet side of the semiconductor laser successively；
The collimating module is used to carry out collimation processing to the shoot laser of the semiconductor laser；
The Fourier transform lens is used to carry out Fourier transformation processing to the laser by collimating processing；
The central optical axis of the central optical axis of the diffraction grating and the Fourier transform lens are set into predetermined angle, so that through
The laser crossed after Fourier transformation processing is equal with the angle of diffraction of the diffraction grating in the incidence angle of the diffraction grating, described
Diffraction grating is used to return the laser lock-on of the exit face of semiconductor laser second in preset wavelength, and along original optical path
Return, with forming pending laser after the sharp combiner of the exit face of semiconductor laser first；
The filter mode structure is used to filter the preset mode in the pending laser, with improving laser quality
The output coupling mirror is used to after handling the pending laser of incidence be emitted, to obtain shoot laser.
2. system according to claim 1, it is characterised in that first collimating module includes N number of sub- collimation unit, institute
Stating the second collimating module includes N number of sub- collimation unit；
The sub- collimation unit include the fast axis collimation mirror set gradually along the semiconductor laser exit facet central optical axis and
Slow axis collimating mirror；
The fast axis collimation mirror has antireflective film away from the side surface of semiconductor laser one；
The slow axis collimating mirror has antireflective film away from the side surface of semiconductor laser one；
N is equal to the quantity of the semiconductor laser, and the sub- collimation unit in a collimating module described is partly led with one
Body laser is corresponding.
3. system according to claim 2, it is characterised in that the fast axis collimation mirror, the both side surface of slow axis collimating mirror
It is respectively provided with antireflective film；
The output coupling mirror has antireflective film towards the side surface of semiconductor laser one, and the output coupling mirror deviates from institute
Stating the side surface of semiconductor laser one has reflectance coating.
4. system according to claim 1, it is characterised in that also include：Speculum；
The reflecting surface of the speculum is set towards the diffraction grating, for reflecting 0 order diffraction light of the diffraction grating, with
Return to the 0 order diffraction light original optical path.
5. system according to claim 4, it is characterised in that the reflectivity of the reflectance coating of the speculum meets that laser rises
Shake requirement.
6. system according to claim 1, it is characterised in that the filter mode structure includes：D types speculum and space filtering
Device；Wherein,
The D types speculum is set towards first collimating module, and the spatial filter is arranged at the D types speculum back of the body
From the first collimating module side.
7. system according to claim 1, it is characterised in that the filter mode structure includes：The first grating be arrangeding in parallel
With the second grating；
First grating and the second grating diffration face are oppositely arranged, and the exit face of semiconductor laser first swashs
Light filters mould after collimation is handled, successively by the reflection of first grating and the second grating, and the output coupling mirror goes out backward
Penetrate.
8. system according to claim 1, it is characterised in that the filter structure includes：D types speculum, space filtering
Device, the first grating and the second grating；Wherein,
The central optical axis of the speculum and spatial filter overlap, first grating and the second grating diffration face it is relative and
It is arranged in parallel；
The laser of the exit facet of semiconductor laser first is after collimation is handled, successively by first grating, second
The reflection filter mould of grating, and the backward output coupling mirror outgoing of the filter mould of the D types speculum and spatial filter processing.
9. the system according to claim 7 or 8, it is characterised in that first grating is reflection-type grating or diffraction type
Grating；
Second grating is reflection-type grating or diffraction gratings.
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| CN110109259A (en) * | 2019-04-25 | 2019-08-09 | 中国科学院苏州生物医学工程技术研究所 | The beam merging apparatus of semiconductor laser high light beam quality high-power output |
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