CN107404061B - A kind of semiconductor laser outer cavity coherent conjunction beam system - Google Patents
A kind of semiconductor laser outer cavity coherent conjunction beam system Download PDFInfo
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- CN107404061B CN107404061B CN201710779811.XA CN201710779811A CN107404061B CN 107404061 B CN107404061 B CN 107404061B CN 201710779811 A CN201710779811 A CN 201710779811A CN 107404061 B CN107404061 B CN 107404061B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 111
- 230000001427 coherent effect Effects 0.000 title claims abstract description 27
- 230000003287 optical effect Effects 0.000 claims description 40
- 230000008878 coupling Effects 0.000 claims description 17
- 238000010168 coupling process Methods 0.000 claims description 17
- 238000005859 coupling reaction Methods 0.000 claims description 17
- 238000002310 reflectometry Methods 0.000 claims description 5
- 230000000295 complement effect Effects 0.000 claims description 4
- 230000008859 change Effects 0.000 abstract description 6
- 238000001228 spectrum Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 8
- 230000003595 spectral effect Effects 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000001914 filtration Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
- G02B27/14—Beam splitting or combining systems operating by reflection only
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Semiconductor Lasers (AREA)
Abstract
This application discloses a kind of semiconductor laser outer cavity coherents to close beam system, the system replaces the wavelength locking and reflection of the laser of Darman raster realization the second exit face of noise spectra of semiconductor lasers using reflecting module, reduces due to realizing wavelength locking and a large amount of laser energy loss of reflection bring using Darman raster；And the reflecting module can be changed in the laser emitting direction of the semiconductor laser by control module at a distance from the semiconductor laser, the purpose for selecting different light paths to realize the shoot laser wavelength for being directed to different semiconductor lasers, it does not need to change light path by mobile semiconductor laser during coherently combined, thereby reduces stability requirement during coherently combined for semiconductor laser.
Description
Technical Field
The application relates to the technical field of lasers, in particular to an external cavity coherent beam combination system of a semiconductor laser.
Background
LASER (Light Amplification by modulated Emission of Radiation), has the characteristics of high brightness, directivity, monochromaticity and good coherence, and is widely applied to various fields in production and life.
Among various lasers for generating laser, a semiconductor laser has the advantages of high efficiency, small volume, long service life, convenience for integration and the like, however, semiconductor laser unit devices often have the problems of small power, large divergence angle, light beam quality which cannot meet the requirements of industry and military and the like, so that the problems need to be solved by a beam combination method.
Currently known beam combining methods are: spatial beam combination, waveguide beam combination, spectral beam combination, coherent beam combination and polarization beam combination; in the beam combining methods, coherent combining beams have obvious advantages in the aspect of improving the beam quality, however, the requirements of the coherent combining beams on the phase are very strict, and a semiconductor laser needs to be moved to change the optical path in the process of adjusting so as to realize coherent cancellation; this is highly desirable for laser stability and requires the use of a Dammann (Dammann) grating, which has a diffraction efficiency of about 77% and a partial loss of energy.
Disclosure of Invention
In order to solve the technical problem, the invention provides an external cavity coherent beam combination system of a semiconductor laser, which aims to reduce the stability requirement on the semiconductor laser in the coherent beam combination process of the semiconductor laser and reduce the laser energy loss of the semiconductor laser.
In order to achieve the technical purpose, the embodiment of the invention provides the following technical scheme:
an external cavity coherent beam combination system of a semiconductor laser, which is applied to a laser system with a plurality of semiconductor lasers, and comprises: the device comprises a laser processing module, a first collimation module, a second collimation module and a reflection module; wherein,
the first collimation module and the laser processing module are sequentially arranged on one side of the first emergent surfaces of the plurality of semiconductor lasers;
the second collimation module and the reflection module are sequentially arranged on one side of the second emergent surfaces of the plurality of semiconductor lasers;
the collimation module is used for collimating the emergent laser of the semiconductor laser;
the reflection module can move in the laser emitting direction of the semiconductor laser, and is used for locking the laser emitted from the second emitting surface of the semiconductor laser at a preset wavelength and returning along an original optical path to form laser to be processed after being coherent and combined with the laser emitted from the first emitting surface of the semiconductor laser;
the laser processing module is used for emitting the incident laser to be processed after optical processing so as to obtain the emitted laser.
Optionally, the first collimating module includes N sub-collimating units, and the second collimating module includes N sub-collimating units;
the sub-collimation unit comprises a fast axis collimation lens and a slow axis collimation lens which are sequentially arranged along the central optical axis of the emergent surface of the semiconductor laser;
the surface of the fast axis collimating mirror, which is far away from the semiconductor laser, is provided with an antireflection film;
the surface of the slow axis collimating mirror, which is far away from the semiconductor laser, is provided with an antireflection film;
n is equal to the number of semiconductor lasers, one sub-collimating unit corresponding to one semiconductor laser.
Optionally, the reflective module comprises N reflective optics;
the central optical axis of one of the reflective optical devices coincides with the central optical axis of the exit surface of one of the semiconductor lasers;
n is equal to the number of semiconductor lasers, one corresponding to each.
Optionally, the reflective optical device is a diffraction grating or a mirror.
Optionally, the diffraction efficiency of the diffraction grating is greater than or equal to 95%.
Optionally, the reflectivity of the reflector meets the laser oscillation starting requirement.
Optionally, the laser processing module includes: the Fourier transform lens, the spatial filter and the output coupling mirror; wherein,
the central optical axes of the Fourier transform lens, the spatial filter and the output coupling mirror are superposed;
the plurality of semiconductor lasers are symmetrically arranged about a central optical axis of the Fourier transform lens;
the surface of one side of the output coupling mirror, which is away from the spatial filter, is provided with an antireflection film, and the surface of one side of the output coupling mirror, which faces the spatial filter, is provided with a reflecting film.
Optionally, the output coupling mirror is a plano-concave lens, a concave surface of the plano-concave lens faces one side of the fourier transform lens, and a concave surface of the plano-concave lens is complementary to a convex surface of the fourier transform lens.
Optionally, the method further includes: a control module;
the control module is used for controlling the reflection module to move in the laser emitting direction of the semiconductor laser.
Optionally, the control module is a stepping motor or a motor.
It can be seen from the foregoing technical solutions that the embodiments of the present invention provide an external cavity coherent beam combining system for a semiconductor laser, in which a reflection module is used to replace a dammann grating to implement wavelength locking and reflection of laser light emitted from a second emitting surface of the semiconductor laser, thereby reducing a large amount of laser energy loss caused by the implementation of wavelength locking and reflection by the dammann grating; the reflecting module can move in the laser emitting direction of the semiconductor laser to change the distance between the laser emitting direction of the semiconductor laser and the semiconductor laser, so that the purpose of selecting different optical paths for the emitting laser wavelengths of different semiconductor lasers is achieved, the optical paths do not need to be changed by moving the semiconductor laser in the coherent beam combining process, and the requirement on the stability of the semiconductor laser in the coherent beam combining process is further reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an external cavity coherent beam combination system of a semiconductor laser according to an embodiment of the present application;
fig. 2 is a schematic structural diagram of an external cavity coherent beam combination system of a semiconductor laser according to another embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The embodiment of the present application provides an external cavity coherent beam combination system of a semiconductor laser, as shown in fig. 1, which is applied to a laser system having a plurality of semiconductor lasers a10, where the external cavity coherent beam combination system of a semiconductor laser a10 includes: a laser processing module 300, a first collimating module 100, a second collimating module 200, and a reflecting module 400; wherein,
the first collimating module 100 and the laser processing module 300 are sequentially arranged on one side of the first emitting surface of the plurality of semiconductor lasers a 10;
the second collimating module 200 and the reflecting module 400 are sequentially arranged at one side of the second emitting surface of the plurality of semiconductor lasers a 10;
the collimation module is used for collimating the emergent laser of the semiconductor laser A10;
the reflection module 400 can move in the laser emitting direction of the semiconductor laser, and is configured to lock the laser emitted from the second emitting surface of the semiconductor laser a10 at a preset wavelength, and reflect the laser along the original optical path to form laser to be processed after the laser is coherently combined with the laser emitted from the first emitting surface of the semiconductor laser a 10;
the laser processing module 300 is configured to perform optical processing on incident laser to be processed and then emit the laser to obtain emitted laser.
Referring to fig. 1, after the laser light emitted from the second emitting surface of the semiconductor laser a10 is collimated by the second collimating module 200, the fast axis divergence angle and the slow axis divergence angle of the laser light are compressed, and the laser light is emitted in the form of near parallel light in the fast axis direction and the slow axis direction, and after the emitted laser light is reflected by the reflecting module 400, the wavelength is locked at the preset wavelength, and the laser light returns to the semiconductor laser a10 along the original optical path, and is emitted from the first emitting surface of the semiconductor laser a10, and forms laser light to be processed after being coherently combined with the laser light emitted from the first emitting surface of the semiconductor laser a 10;
the laser to be processed is emitted after being subjected to fourier transform, filtering, resonance, amplification and phase locking processing of the laser processing module 300, and the emitted laser is called the emitted laser.
The diffraction efficiency of the diffraction grating is preferably greater than or equal to 95%.
It should be noted that, in the system, the reflection module 400 is used to replace the dammann grating to implement wavelength locking and reflection of the laser emitted from the second emitting surface of the semiconductor laser a10, so that a large amount of laser energy loss caused by implementing wavelength locking and reflection by using the dammann grating is reduced; the reflecting module 400 moves in the laser emitting direction of the semiconductor laser to change the distance between the laser emitting direction of the semiconductor laser a10 and the semiconductor laser a10, so that the purpose of selecting different optical paths for the emitting laser wavelengths of different semiconductor lasers a10 is achieved, the optical path does not need to be changed by moving the semiconductor laser a10 in the coherent beam combination process, and the requirement on the stability of the semiconductor laser a10 in the coherent beam combination process is further reduced.
On the basis of the above embodiments, in an embodiment of the present application, referring to fig. 1 as well, the first collimating module 100 includes N sub-collimating units M10, and the second collimating module 200 includes N sub-collimating units M10;
the sub-collimation unit M10 comprises a fast-axis collimating mirror M11 and a slow-axis collimating mirror M12 which are sequentially arranged along the central optical axis of the emergent surface of the semiconductor laser A10;
the surface of the fast axis collimating mirror M11, which faces away from the semiconductor laser A10, is provided with an antireflection film;
the surface of the slow axis collimating mirror M12, which faces away from the semiconductor laser A10, is provided with an antireflection film;
n is equal to the number of the semiconductor lasers a10, and the sub-collimating unit M10 in one collimating module corresponds to one of the semiconductor lasers a 10.
Optionally, the reflective module 400 includes N reflective optics;
the central optical axis of one of the reflection optical devices coincides with the central optical axis of the exit surface of one of the semiconductor lasers a 10;
n is equal to the number of the semiconductor lasers a10, one of the reflective optical devices corresponding to one of the semiconductor lasers a 10.
Alternatively, referring to fig. 1 and 2, the reflective optics is a diffraction grating 410 or a mirror 420.
It should be noted that the distance between each reflective optical device in the reflective module 400 and the corresponding semiconductor laser a10 may be adjusted by the control module, so as to change the optical path length from the laser beam emitted by the semiconductor laser a10 to the reflective optical device.
When the spectral width of the semiconductor laser a10 is narrow and the mode is few, a mirror 420 may be employed as the reflective optical device; accordingly, when the spectral width of the semiconductor laser a10 is wide and the mode is large, it is preferable to employ the diffraction grating 410 as the reflection optical device.
The diffraction efficiency of the diffraction grating 410 used is preferably greater than or equal to 95%, the ruling, polarization, and wavelength of the diffraction grating 410 being contingent on the case;
the reflectivity of the mirror 420 used is preferably greater than 99% to meet the laser start-up requirements.
Optionally, the semiconductor laser a10 may be a single-tube semiconductor laser a10, a linear-array semiconductor laser a10, or a stacked-array semiconductor laser a 10.
On the basis of the above embodiment, in a further embodiment of the present application, still referring to fig. 1, the light processing module includes: fourier transform lens 310, spatial filter 320, and output coupling mirror 330; wherein,
the central optical axes of the fourier transform lens 310, the spatial filter 320 and the output coupling mirror 330 coincide;
the plurality of semiconductor lasers a10 are arranged symmetrically about a central optical axis of the fourier transform lens 310;
the surface of the output coupling mirror 330 facing away from the spatial filter 320 has an antireflection film, and the surface of the output coupling mirror 330 facing the spatial filter 320 has a reflection film.
It should be noted that the reflectivity of the antireflection film on the surfaces of the fast axis collimator M11, the slow axis collimator M12, and the output coupling mirror 330 is preferably less than 1%, and the reflectivity of the reflective film on the surface of the output coupling mirror 330 is preferably in the range of 9% to 60%, inclusive. The specific values are not limited in the present application and are determined according to the actual situation.
The spatial filter 320 may filter out a mode of a fast axis in the laser, and may also filter out a mode of a slow axis in the laser, depending on actual requirements.
Preferably, the output coupling mirror 330 is a plano-concave lens, the concave surface of the plano-concave lens is disposed toward the side of the fourier transform lens 310, and the concave surface of the plano-concave lens is complementary to the convex surface of the fourier transform lens 310.
It should be noted that the concave surface of the plano-concave lens is complementary to the convex surface of the fourier transform lens 310, which can also be referred to as that the radius of the concave surface of the plano-concave lens is equal to the radius of the convex surface of the fourier transform lens 310, so as to ensure that the laser light reflected by the reflective film of the plano-concave lens can return to the original optical path and enter the semiconductor laser a10 as feedback laser light.
On the basis of the foregoing embodiments, in a preferred embodiment of the present application, the external cavity coherent beam combining system of a semiconductor laser further includes: a control module;
the control module is configured to control the reflection module 400 to move in a laser emitting direction of the semiconductor laser.
Alternatively, the control module may be a stepper motor, or may be a motor, and the precision of the adjustment distance of the control module is related to the laser wavelength of the semiconductor laser a 10. However, in other embodiments of the present application, the distance between the reflection module and the semiconductor laser a10 in the laser emitting direction of the semiconductor laser a10 may also be adjusted by manual adjustment. The present application does not limit this, which is determined by the actual situation.
In summary, the embodiment of the present application provides an external-cavity coherent beam combining system for a semiconductor laser a10, which uses a reflection module 400 to replace a dammann grating to implement wavelength locking and reflection of laser light emitted from a second emitting surface of a semiconductor laser a10, thereby reducing a large amount of laser energy loss caused by implementing wavelength locking and reflection by the dammann grating; the reflecting module 400 can change the distance between the laser emitting direction of the semiconductor laser a10 and the semiconductor laser a10 through a control module, so that the purpose of selecting different optical paths for the emitting laser wavelengths of different semiconductor lasers a10 is achieved, the optical path does not need to be changed by moving the semiconductor laser a10 in the coherent beam combination process, and the requirement on the stability of the semiconductor laser a10 in the coherent beam combination process is further reduced.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. An external cavity coherent beam combination system of a semiconductor laser, which is applied to a laser system with a plurality of semiconductor lasers, and comprises: the device comprises a laser processing module, a first collimation module, a second collimation module and a reflection module; wherein,
the first collimation module and the laser processing module are sequentially arranged on one side of the first emergent surfaces of the plurality of semiconductor lasers;
the second collimation module and the reflection module are sequentially arranged on one side of the second emergent surfaces of the plurality of semiconductor lasers;
the first collimation module and the second collimation module are both used for collimating the emergent laser of the semiconductor laser;
the reflection module can move in the laser emitting direction of the semiconductor laser, and is used for locking the laser emitted from the second emitting surface of the semiconductor laser at a preset wavelength and returning along an original optical path to form laser to be processed after being coherent and combined with the laser emitted from the first emitting surface of the semiconductor laser;
the laser processing module is used for emitting the incident laser to be processed after optical processing so as to obtain the emitted laser.
2. The system of claim 1, wherein the first collimating module comprises N sub-collimating units, and the second collimating module comprises N sub-collimating units;
the sub-collimation unit comprises a fast axis collimation lens and a slow axis collimation lens which are sequentially arranged along the central optical axis of the emergent surface of the semiconductor laser;
the surface of the fast axis collimating mirror, which is far away from the semiconductor laser, is provided with an antireflection film;
the surface of the slow axis collimating mirror, which is far away from the semiconductor laser, is provided with an antireflection film;
n is equal to the number of semiconductor lasers, one sub-collimating unit corresponding to one semiconductor laser.
3. The system of claim 1, wherein the reflection module comprises N reflection optics;
the central optical axis of one of the reflective optical devices coincides with the central optical axis of the exit surface of one of the semiconductor lasers;
n is equal to the number of semiconductor lasers, one corresponding to each.
4. The system of claim 3, wherein the reflective optics are a diffraction grating or a mirror.
5. The system of claim 4, wherein the diffraction efficiency of the diffraction grating is greater than or equal to 95%.
6. The system of claim 4, wherein the reflectivity of the mirror satisfies laser start-up requirements.
7. The system of claim 1, wherein the laser processing module comprises: the Fourier transform lens, the spatial filter and the output coupling mirror; wherein,
the central optical axes of the Fourier transform lens, the spatial filter and the output coupling mirror are superposed;
the plurality of semiconductor lasers are symmetrically arranged about a central optical axis of the Fourier transform lens;
the surface of one side of the output coupling mirror, which is away from the spatial filter, is provided with an antireflection film, and the surface of one side of the output coupling mirror, which faces the spatial filter, is provided with a reflecting film.
8. The system of claim 7, wherein the output coupling mirror is a plano-concave lens, a concave surface of the plano-concave lens is disposed toward a side of the fourier transform lens, and a concave surface of the plano-concave lens is complementary to a convex surface of the fourier transform lens.
9. The system of claim 1, further comprising: a control module;
the control module is used for controlling the reflection module to move in the laser emitting direction of the semiconductor laser.
10. The system of claim 9, wherein the control module is a stepper motor or a motor.
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| CN111313221A (en) * | 2020-03-19 | 2020-06-19 | 长春理工大学 | Laser for directly generating double-path coherent light |
| CN113376615B (en) * | 2021-04-27 | 2022-03-08 | 探维科技(北京)有限公司 | Transmitting system capable of remarkably reducing height of laser radar |
| CN113823996B (en) * | 2021-07-28 | 2023-01-03 | 中国工程物理研究院应用电子学研究所 | Method and system for realizing high-power near-diffraction limit semiconductor laser |
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| CN102916341A (en) * | 2012-10-31 | 2013-02-06 | 中国科学院长春光学精密机械与物理研究所 | Method for combining beams of single-tube semiconductor laser devices |
| CN102931585A (en) * | 2012-10-31 | 2013-02-13 | 中国科学院长春光学精密机械与物理研究所 | External-cavity-beam-combination semiconductor laser fiber coupling module |
| US9134538B1 (en) * | 2013-02-06 | 2015-09-15 | Massachusetts Institute Of Technology | Methods, systems, and apparatus for coherent beam combining |
| CN105428996A (en) * | 2015-12-09 | 2016-03-23 | 中国科学院长春光学精密机械与物理研究所 | Multi-grating structure-based semiconductor laser beam combination device and beam combination method |
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| JP4381460B2 (en) * | 2007-09-04 | 2009-12-09 | 三菱電機株式会社 | Laser photosynthesis device |
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| CN102916341A (en) * | 2012-10-31 | 2013-02-06 | 中国科学院长春光学精密机械与物理研究所 | Method for combining beams of single-tube semiconductor laser devices |
| CN102931585A (en) * | 2012-10-31 | 2013-02-13 | 中国科学院长春光学精密机械与物理研究所 | External-cavity-beam-combination semiconductor laser fiber coupling module |
| US9134538B1 (en) * | 2013-02-06 | 2015-09-15 | Massachusetts Institute Of Technology | Methods, systems, and apparatus for coherent beam combining |
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