CN210092563U - Vertical external cavity surface emitting laser - Google Patents
Vertical external cavity surface emitting laser Download PDFInfo
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- CN210092563U CN210092563U CN201922223508.9U CN201922223508U CN210092563U CN 210092563 U CN210092563 U CN 210092563U CN 201922223508 U CN201922223508 U CN 201922223508U CN 210092563 U CN210092563 U CN 210092563U
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- surface emitting
- collimating lens
- emitting laser
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- external cavity
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Abstract
The application discloses a vertical external cavity surface emitting laser, which comprises a collimating lens; the laser emission chip is positioned on the first side of the collimating lens and comprises a first electrode, a first contact layer, an active layer, a second contact layer and a second electrode, wherein the first electrode, the first contact layer, the active layer, the second contact layer and the second electrode are sequentially stacked from bottom to top, the first light outlet is formed in a focal plane on the first side of the collimating lens, and the second electrode is provided with a second light outlet; the diffraction grating is positioned on the second side of the collimating lens, and the first side is opposite to the second side; and the first top cavity mirror is positioned on one side of the laser emission chip, which is far away from the collimating lens, or the second top cavity mirror is positioned in the laser emission chip. The diffraction grating has a wide tuning range and can provide relatively flat first-order diffraction efficiency, so that the gain spectrum range of an active layer of a laser emission chip is fully covered, the wavelength tuning range is the gain spectrum range, the wavelength tuning range is widened, the cavity length of the gain resonant cavity is increased by the vertical outer resonant cavity, and the spectral line width is narrowed.
Description
Technical Field
The application relates to the technical field of semiconductor lasers, in particular to a vertical outer cavity surface emitting laser.
Background
Vertical-External-Cavity Surface-emitting laser (VECSEL), a small semiconductor laser, emits laser light perpendicular to the Surface of a semiconductor wafer. Vertical external cavity surface emitting lasers typically require rapid wavelength tuning during use. At present, the cavity length tuning principle is widely adopted to tune the vertical external cavity surface emitting laser, the tuning range of the wavelength is small by adjusting the distance between an external cavity mirror and a chip, the tuning range is smaller than the gain spectrum range of the emitting chip, the wavelength tuning range of the whole VECSEL is the actual cavity length tuning range of the external cavity mirror and the chip, and is limited by the limitation of the cavity length tuning range, and the wavelength tuning range is limited; meanwhile, the tuning range of the resonant external cavity is very short, so the spectral line width is still wider.
Therefore, how to increase the wavelength tuning range and decrease the spectral linewidth of the vcsel is an urgent technical problem to be solved by those skilled in the art.
SUMMERY OF THE UTILITY MODEL
It is an object of the present application to provide a vertical external cavity surface emitting laser to increase the wavelength tuning range of the vertical external cavity surface emitting laser and to reduce the spectral linewidth.
In order to solve the above technical problem, the present application provides a vertical external cavity surface emitting laser, including:
a collimating lens;
the laser emission chip is positioned on the first side of the collimating lens and comprises a first electrode, a first contact layer, an active layer, a second contact layer and a second electrode, wherein the first electrode, the first contact layer, the active layer, the second contact layer and the second electrode are sequentially stacked from bottom to top and are provided with a first light outlet;
a diffraction grating located on a second side of the collimating lens, the first side being opposite the second side;
and the first top cavity mirror is positioned on one side of the laser emission chip, which is far away from the collimating lens, or the second top cavity mirror is positioned in the laser emission chip.
Optionally, when the second top cavity mirror is included, the second top cavity mirror is a distributed bragg reflector or a high-reflection dielectric mirror, where the high-reflection dielectric mirror includes a stacked multilayer dielectric film.
Optionally, when the first top cavity mirror is included, the first top cavity mirror is a plano-concave lens.
Optionally, the method further includes:
and the broadband high-reflection coating is positioned on the refraction surface of the plano-concave lens.
Optionally, the method further includes:
and the broadband antireflection coating is positioned on the plane of the plano-concave lens opposite to the light refracting surface.
Optionally, the method further includes:
and the broadband antireflection coating is positioned on the contact surface of the first light outlet and the first contact layer.
Optionally, the method further includes:
and the broadband antireflection coating is positioned on the surface of the collimating lens.
Optionally, the collimating lens is a circular aspheric lens.
Optionally, the diffraction grating is a blazed grating or a holographic grating.
The application provides a vertical external cavity surface emitting laser, which comprises a collimating lens; the laser emission chip is positioned on the first side of the collimating lens and comprises a first electrode, a first contact layer, an active layer, a second contact layer and a second electrode, wherein the first electrode, the first contact layer, the active layer, the second contact layer and the second electrode are sequentially stacked from bottom to top and are provided with a first light outlet; a diffraction grating located on a second side of the collimating lens, the first side being opposite the second side; and the first top cavity mirror is positioned on one side of the laser emission chip, which is far away from the collimating lens, or the second top cavity mirror is positioned in the laser emission chip.
Therefore, the vertical external cavity surface emitting laser in the application comprises the collimating lens, the laser emitting chip, the diffraction grating and any one of the first top cavity mirror and the second top cavity mirror, wherein the diffraction grating has a very wide tuning range and can provide relatively flat first-order diffraction efficiency, so that the gain spectrum range of an active layer of the laser emitting chip can be fully covered, the wavelength tuning range of the vertical external cavity surface emitting laser is the gain spectrum range, and the wavelength tuning range is widened.
Drawings
For a clearer explanation of the embodiments or technical solutions of the prior art of the present application, the drawings needed for the description of the embodiments or prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a block diagram of a vertical external cavity surface emitting laser according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of a vertical external cavity surface emitting laser according to an embodiment of the present disclosure;
fig. 3 is a schematic structural diagram of a laser emitting chip according to an embodiment of the present disclosure;
fig. 4 is a schematic structural diagram of another laser emitting chip provided in an embodiment of the present application;
fig. 5 is a schematic structural diagram of another laser emitting chip provided in an embodiment of the present application;
in the figure, 1, a collimating lens, 2, a laser emitting chip, 3, a diffraction grating, 4, a first top cavity mirror, 21, a first electrode, 22, a first contact layer, 23, an active layer, 24, a second contact layer, 25, a second electrode, 26, a first light outlet, 27, a second light outlet, 28, and a second top cavity mirror.
Detailed Description
In order that those skilled in the art will better understand the disclosure, the following detailed description will be given with reference to the accompanying drawings. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be implemented in other ways different from the specific details set forth herein, and one skilled in the art may similarly generalize the present invention without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
As described in the background section, the wavelength tuning of the conventional vertical external cavity surface emitting laser is performed by adjusting the distance between the external cavity mirror and the chip, so that the tuning range is small, the wavelength tuning range is narrow, and the spectral line width is wide.
In view of this, the present application provides a vertical external cavity surface emitting laser, please refer to fig. 1 to 3, in which fig. 1 is a schematic structural diagram of a vertical external cavity surface emitting laser provided in an embodiment of the present application, fig. 2 is a schematic structural diagram of a vertical external cavity surface emitting laser provided in an embodiment of the present application, and fig. 3 is a schematic structural diagram of a laser emitting chip provided in an embodiment of the present application, the vertical external cavity surface emitting laser includes:
a collimating lens 1;
the laser emitting chip 2 is positioned on the first side of the collimating lens 1, the laser emitting chip 2 comprises a first electrode 21 provided with a first light outlet 26, a first contact layer 22, an active layer 23, a second contact layer 24 and a second electrode 25 provided with a second light outlet 27, which are sequentially stacked from bottom to top, and the first light outlet 26 is positioned on the focal plane of the first side of the collimating lens 1;
the diffraction grating 3 is positioned on the second side of the collimating lens 1, and the first side is opposite to the second side;
the first top cavity mirror 4 is positioned on one side of the laser emission chip 2, which is far away from the collimating lens 1, or the second top cavity mirror 28 is positioned in the laser emission chip 2.
Preferably, the first side is the side of the collimating lens with the refractive surface with the large curvature radius.
The first light exit 26 and the second light exit 27 are provided to face each other.
It will be appreciated that there is only one of the first top cavity mirror 4 and the second top cavity mirror 28, i.e. when the vertical external cavity surface emitting laser comprises the first top cavity mirror 4, the second top cavity mirror 28 is not included; when the VCSEL includes the second top cavity mirror 28, the first top cavity mirror 4 is not included.
Optionally, when the vertical external cavity surface emitting laser has the first top cavity mirror 4, the first top cavity mirror 4 is a plano-concave lens, and the structure of the laser emitting chip 2 is shown in fig. 3.
The first light outlet 26 is located on the focal plane of the first side of the collimating lens 1, that is, the first light outlet 26 is opposite to the collimating lens 1, and the collimating lens 1 is used for collimating the light emitted from the first light outlet 26 and making the light incident on the diffraction grating 3, and focusing and injecting the first-order diffracted light fed back by the diffraction grating 3 into the first light outlet 26 until the first-order diffracted light is transmitted to the active layer 23.
The diffraction grating 3 can provide more than 95% of first-order diffraction efficiency in a wide wavelength range, can fully cover the gain spectrum range of the active layer 23 of the laser emitting chip 2, and realizes a wide wavelength tuning range.
In the present embodiment, the diffraction grating 3 is not particularly limited, as appropriate. The diffraction grating 3 is, for example, a blazed grating or a holographic grating.
Further, in this embodiment, the grating angle of the diffraction grating 3 is not specifically limited, and the wavelength of the vertical external cavity surface emitting laser is tuned by adjusting the grating angle. Similarly, the number of grating lines of the diffraction grating 3 is not specifically limited in this embodiment, and depends on the operating wavelength band of the vertical external cavity surface emitting laser. Similarly, the grating period is not specifically limited in this embodiment, depending on the operating wavelength of the vertical external cavity surface emitting laser.
The collimating lens 1 can convert the light beam with a large divergence angle output from the first light outlet 26 into a collimated light beam with an ultra-low divergence angle, and can also convert the first-order diffracted light fed back from the diffraction grating 3 into a focused light beam to enter the first light outlet 26, thereby realizing external cavity light feedback.
Note that the structure of the active layer 23 is not particularly limited in this embodiment, as appropriate. For example, the active layer 23 may be any one of a GaAs-based active layer 23, an InP-based active layer 23, a GaSb-based active layer 23, a quantum well structure active layer 23, and a quantum dot structure active layer 23.
Specifically, the first contact layer 22 and the second contact layer 24 form ohmic contacts with the first electrode 21 and the second electrode 25, respectively, as low impedance interfaces for external driving current injection. An external driving current is injected into the active layer 23 through the first electrode 21 and the second electrode 25 to generate radiation light, providing an optical gain of a desired operating band of the vertical external cavity surface emitting laser. The second top cavity mirror 28 provides a function of a wide spectrum reflector on the top surface side, the radiated light is output from the first light outlet 26, converted into a collimated light beam after passing through the collimating lens 1, and incident to the diffraction grating 3, the diffraction grating 3 provides a function of a high-efficiency first-order diffracted light (providing a function of a high reflector on the bottom surface side) which returns along the original light path, and the diffracted light is focused into the first light outlet 26 after passing through the collimating lens 1 until being transmitted to the active layer 23. The radiation light oscillates between the second top cavity mirror 28 and the diffraction grating 3 to form a gain resonant cavity; or the first top cavity mirror 4 provides a wide spectrum mirror function on the top surface side, and the radiated light oscillates back and forth between the first top cavity mirror 4 and the diffraction grating 3 to form a gain resonant cavity.
The vertical external cavity surface emitting laser in the embodiment includes a collimating lens 1, a laser emitting chip 2, a diffraction grating 3, and any one of a first top cavity mirror 4 and a second top cavity mirror 28, where the diffraction grating 3 has a very wide tuning range and can provide a relatively flat first-order diffraction efficiency, so as to fully cover a gain spectrum range of an active layer 23 of the laser emitting chip 2, and make a wavelength tuning range of the vertical external cavity surface emitting laser be the gain spectrum range, and the wavelength tuning range is widened.
In one embodiment of the present application, when the vcsel includes the second top cavity mirror 28, the second top cavity mirror 28 is a distributed bragg reflector or a reflective dielectric mirror, wherein the highly reflective dielectric mirror includes a stack of dielectric films.
Specifically, referring to fig. 4, fig. 4 is a schematic structural diagram of another laser emitting chip 2 provided in the embodiment of the present application, and when the second top cavity mirror 28 is a distributed bragg reflector, the second top cavity mirror 28 is located between the active layer 23 and the second contact layer 24.
Specifically, referring to fig. 5, fig. 5 is a schematic structural diagram of another laser emitting chip 2 provided in the embodiment of the present application, and when the second top cavity mirror 28 is a high reflective dielectric mirror, the second top cavity mirror 28 is located on a surface of the second electrode 25 facing away from the active layer 23.
Preferably, when the vertical external cavity surface emitting laser is a long-wavelength vertical external cavity surface emitting laser, the vertical external cavity surface emitting laser includes the first top cavity mirror 4, and the laser emitting chip 2 has the structure shown in fig. 2, because the long-wavelength vertical cavity surface emitting laser generally adopts an InP-based or GaSb-based semiconductor material system, compared with a common near-infrared GsAs-based semiconductor material system, if the laser emitting chip 2 includes a distributed bragg reflector, the difference between the high refractive index and the low refractive index thereof is small, and in addition, the working wavelength is long, the distributed bragg reflector is very thick, and the loss is also very large; even if a high-reflection dielectric mirror is adopted in the laser emitting chip 2, the high-reflection dielectric mirror is very thick, so that the loss is large and the preparation is difficult, and the first top cavity mirror 4 and the diffraction grating 3 are adopted to form a vertical external resonant cavity, so that the defects can be completely avoided.
On the basis of the above embodiments, in an embodiment of the present application, the vertical external cavity surface emitting laser further includes:
the broadband high-reflection coating film positioned on the refraction surface of the plano-concave lens can effectively improve the optical feedback efficiency.
Further, the vertical external cavity surface emitting laser further includes:
the broadband antireflection coating positioned on the plane of the plano-concave lens opposite to the light refracting surface can effectively reduce the optical power loss.
On the basis of any one of the above embodiments, in an embodiment of the present application, the vertical external cavity surface emitting laser further includes:
and the broadband antireflection coating is positioned on the contact surface of the first light outlet 26 and the first contact layer 22, so that the Fresnel reflection of light at the first light outlet 26 is reduced, and the light transmission efficiency of the gain resonant cavity is improved.
Preferably, the vertical external cavity surface emitting laser further comprises: and the broadband antireflection coating is positioned on the surface of the collimating lens 1 so as to improve the light transmittance and improve the light transmission efficiency of the gain resonant cavity.
Further, broadband antireflection coatings are provided on both surfaces of the collimator lens 1.
Preferably, the collimating lens 1 is a round aspheric lens, and since the light beam emitted by the laser emitting chip 2 is generally circularly symmetric, the round aspheric lens can achieve a very ideal collimating effect on the light beam.
The embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The vertical external cavity surface emitting laser provided by the present application is described in detail above. The principles and embodiments of the present application are explained herein using specific examples, which are provided only to help understand the method and the core idea of the present application. It should be noted that, for those skilled in the art, it is possible to make several improvements and modifications to the present application without departing from the principle of the present application, and such improvements and modifications also fall within the scope of the claims of the present application.
Claims (9)
1. A vertical external cavity surface emitting laser, comprising:
a collimating lens;
the laser emission chip is positioned on the first side of the collimating lens and comprises a first electrode, a first contact layer, an active layer, a second contact layer and a second electrode, wherein the first electrode, the first contact layer, the active layer, the second contact layer and the second electrode are sequentially stacked from bottom to top and are provided with a first light outlet;
a diffraction grating located on a second side of the collimating lens, the first side being opposite the second side;
and the first top cavity mirror is positioned on one side of the laser emission chip, which is far away from the collimating lens, or the second top cavity mirror is positioned in the laser emission chip.
2. A vertical external cavity surface emitting laser according to claim 1, wherein when said second top cavity mirror is included, said second top cavity mirror is a distributed bragg reflector or a highly reflective dielectric mirror, wherein said highly reflective dielectric mirror comprises a laminated multilayer dielectric film.
3. A vertical external cavity surface emitting laser according to claim 1, wherein when said first top cavity mirror is included, said first top cavity mirror is a plano-concave lens.
4. A vertical external cavity surface emitting laser according to claim 3, further comprising:
and the broadband high-reflection coating is positioned on the refraction surface of the plano-concave lens.
5. A vertical external cavity surface emitting laser according to claim 4, further comprising:
and the broadband antireflection coating is positioned on the plane of the plano-concave lens opposite to the light refracting surface.
6. A vertical external cavity surface emitting laser according to any one of claims 1 to 5, further comprising:
and the broadband antireflection coating is positioned on the contact surface of the first light outlet and the first contact layer.
7. A vertical external cavity surface emitting laser according to claim 6, further comprising:
and the broadband antireflection coating is positioned on the surface of the collimating lens.
8. A vertical external cavity surface emitting laser according to claim 7, wherein said collimating lens is a circular aspherical lens.
9. A vertical external cavity surface emitting laser according to claim 8, wherein said diffraction grating is a blazed grating or a holographic grating.
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| CN201922223508.9U CN210092563U (en) | 2019-12-12 | 2019-12-12 | Vertical external cavity surface emitting laser |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111313231A (en) * | 2020-02-28 | 2020-06-19 | 长春中科长光时空光电技术有限公司 | Vertical cavity surface emitting laser and control method and control device thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111313231A (en) * | 2020-02-28 | 2020-06-19 | 长春中科长光时空光电技术有限公司 | Vertical cavity surface emitting laser and control method and control device thereof |
| CN111313231B (en) * | 2020-02-28 | 2021-07-02 | 长春中科长光时空光电技术有限公司 | Vertical cavity surface emitting laser and control method and control device thereof |
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