CN111313231A - Vertical cavity surface emitting laser and control method and control device thereof - Google Patents
Vertical cavity surface emitting laser and control method and control device thereof Download PDFInfo
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- CN111313231A CN111313231A CN202010131182.1A CN202010131182A CN111313231A CN 111313231 A CN111313231 A CN 111313231A CN 202010131182 A CN202010131182 A CN 202010131182A CN 111313231 A CN111313231 A CN 111313231A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1025—Extended cavities
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Abstract
The invention discloses a control method of a vertical cavity surface emitting laser, which comprises the steps of receiving a temperature reading signal of an active area of the vertical cavity surface emitting laser; determining a corresponding cavity length parameter according to the temperature reading signal; and displacing the external cavity mirror of the vertical cavity surface emitting laser along the light path direction according to the cavity length parameter, so as to adjust the cavity length of the resonant cavity mode, and enabling the wavelength of the adjusted resonant cavity standing wave to coincide with the peak wavelength of the active region gain spectrum of the vertical cavity surface emitting laser. The invention realizes the coincidence of the wavelength of the standing wave of the resonant cavity and the peak wavelength of the gain spectrum of the active area of the vertical cavity surface emitting laser in a wide temperature range, realizes the maximization of the optical gain of the active area of the surface emitting chip to the resonant cavity mode in a wide working temperature range, improves the output optical power and reduces the emission threshold. The invention also provides a control device of the vertical cavity surface emitting laser and the vertical cavity surface emitting laser with the beneficial effects.
Description
Technical Field
The invention relates to the technical field of novel semiconductor lasers, in particular to a vertical cavity surface emitting laser and a control method and a control device thereof.
Background
The vertical cavity surface emitting laser is a semiconductor laser with the light emitting direction vertical to the surface of a chip, and compared with the traditional edge emitting semiconductor laser, the vertical cavity surface emitting laser has the natural advantages of ultralow electric power loss, wafer level direct detection, easy optical fiber coupling, single longitudinal mode lasing, capability of constructing a two-dimensional light emitting matrix and the like. In several application scenarios where the vertical cavity surface emitting laser has potential, such as sensing applications of atomic clocks, magnetometers and the like, or high-speed data transmission applications of data centers and the like, a light source is generally required to have high-temperature working capability.
However, in the existing related goods and technologies, the peak wavelength of the high-temperature gain spectrum of the cavity mode and the peak wavelength of the high-temperature gain spectrum of the active region are overlapped in the laser design, so that the high gain is still maintained under the high-temperature working condition, but in this way, the performance index of the device under the normal-temperature condition or the wider working temperature condition cannot be optimized, and as long as the wavelength of the standing wave of the resonant cavity is not within the preset working temperature range of the device, the wavelength of the standing wave of the resonant cavity cannot be overlapped with the peak wavelength of the gain spectrum of the active region, so that the optical output power is greatly reduced.
Therefore, how to expand the operating temperature range of the vcsel to achieve high power optical output in a large temperature range becomes a problem to be solved by those skilled in the art.
Disclosure of Invention
The invention aims to provide a vertical cavity surface emitting laser and a control method and a control device thereof, which aim to solve the problems that the vertical cavity surface emitting laser in the prior art can keep the working temperature range of high output to be too small, and the output light power is rapidly reduced after the working temperature range exceeds a preset range.
In order to solve the above technical problem, the present invention provides a method for controlling a vertical cavity surface emitting laser, including:
receiving a temperature reading signal of an active region of the vertical cavity surface emitting laser;
determining a corresponding cavity length parameter according to the temperature reading signal;
and displacing the external cavity mirror of the vertical cavity surface emitting laser along the light path direction according to the cavity length parameter, so as to adjust the cavity length of the resonant cavity mode, and enabling the wavelength of the standing wave of the adjusted resonant cavity to coincide with the peak wavelength of the gain spectrum of the active area of the vertical cavity surface emitting laser.
Optionally, in the method for controlling a vertical cavity surface emitting laser, after determining the corresponding cavity length parameter, the method further includes:
and adjusting the position of an antinode of the resonant cavity standing wave according to the determined corresponding cavity length parameter, so that the position of the antinode is coincided with the position of the multiple quantum well of the active region.
A control apparatus of a vertical cavity surface emitting laser, comprising:
the receiving module is used for receiving a temperature reading signal of an active area of the vertical cavity surface emitting laser;
the determining module is used for determining a corresponding cavity length parameter according to the temperature reading signal;
and the adjusting module is used for displacing the external cavity mirror of the vertical cavity surface emitting laser along the light path direction according to the cavity length parameter so as to adjust the cavity length of the resonant cavity mode and enable the wavelength of the standing wave of the adjusted resonant cavity to coincide with the peak wavelength of the active region gain spectrum of the vertical cavity surface emitting laser.
Optionally, in the control apparatus of a vertical cavity surface emitting laser, the adjusting module further includes:
and the antinode adjusting unit is used for adjusting the position of an antinode of the resonant cavity standing wave according to the determined corresponding cavity length parameter so as to enable the position of the antinode to coincide with the position of the multi-quantum well of the active region.
A vertical cavity surface emitting laser comprises a surface emitting chip, a top cavity mirror and a bottom cavity mirror;
the surface emitting chip is arranged between the top cavity mirror and the bottom cavity mirror;
at least one of the top cavity mirror and the bottom cavity mirror is an external cavity mirror, and the external cavity mirror can displace along the propagation direction of the light path to realize the adjustment of the length of the resonant cavity of the vertical cavity surface emitting laser.
Optionally, in the vcsel, the external cavity mirror is a plano-concave lens.
Optionally, in the vcsel, the refractive surface of the plano-concave lens is provided with a broadband high-reflectivity film.
Optionally, in the vcsel, a surface opposite to the refractive surface of the plano-concave lens is provided with a broadband antireflection film.
Optionally, in the vcsel, the active region of the surface emitting chip is any one of a GaAs-based active region, an InP-based active region, or a GaSb-based active region.
Optionally, in the vertical cavity surface emitting laser, the vertical cavity surface emitting laser is a long wavelength vertical cavity surface emitting laser;
the top cavity mirror and the bottom cavity mirror are both external cavity mirrors.
The control method of the vertical cavity surface emitting laser provided by the invention comprises the steps of receiving a temperature reading signal of an active area of the vertical cavity surface emitting laser; determining a corresponding cavity length parameter according to the temperature reading signal; and displacing the external cavity mirror of the vertical cavity surface emitting laser along the light path direction according to the cavity length parameter, so as to adjust the cavity length of the resonant cavity mode, and enabling the wavelength of the standing wave of the adjusted resonant cavity to coincide with the peak wavelength of the gain spectrum of the active area of the vertical cavity surface emitting laser. According to the temperature of the active area, the peak wavelength of the gain spectrum of the active area at the temperature can be obtained, and the wavelength of the resonant cavity standing wave is changed along with the cavity length of the resonant cavity, so that the change of the cavity length of the resonant cavity can be realized by adjusting the position of the external cavity mirror, and further the resonant cavity standing wave can be adjusted, and finally the wavelength of the resonant cavity standing wave is coincided with the peak wavelength of the gain spectrum of the active area of the vertical cavity surface emitting laser. The invention also provides a control device of the vertical cavity surface emitting laser and the vertical cavity surface emitting laser with the beneficial effects.
Drawings
In order to more clearly illustrate the embodiments or technical solutions of the present invention, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained based on these drawings without creative efforts.
FIG. 1 is a schematic flow chart of one embodiment of a method for controlling a VCSEL provided in the present invention;
FIG. 2 is a schematic flow chart illustrating another exemplary embodiment of a method for controlling a VCSEL according to the present invention;
FIG. 3 is a schematic structural diagram of an embodiment of a control apparatus for a VCSEL provided in the present invention;
FIG. 4 is a schematic structural diagram of an embodiment of a VCSEL provided in the present invention;
FIG. 5 is a schematic structural diagram of another embodiment of a VCSEL provided in the present invention;
FIG. 6 is a schematic structural diagram of another embodiment of a VCSEL provided in the present invention.
Detailed Description
In order that those skilled in the art will better understand the disclosure, the invention will be described in further detail with reference to the accompanying drawings and specific embodiments. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The core of the present invention is to provide a method for controlling a vertical cavity surface emitting laser, wherein a flow chart of one embodiment is shown in fig. 1, which is called as a first embodiment, and the method includes:
step S101: temperature reading signals of an active region of the VCSEL are received.
The collection can be predetermine the cycle of temperature reading signal, gather once every certain time promptly the temperature of active area is received the temperature reading signal also can adopt manual instruction's mode, only receives the instruction signal that the manual work sent promptly, just can gather the temperature of active area receives the temperature reading signal.
Step S102: and determining a corresponding cavity length parameter according to the temperature reading signal.
The corresponding gain spectrum peak wavelengths of the active region at different temperatures can be prestored in the system, and the cavity length parameter is determined according to the corresponding relation between the cavity length of the resonant cavity and the wavelength of the resonant cavity standing wave.
Step S103: and displacing the external cavity mirror of the vertical cavity surface emitting laser along the light path direction according to the cavity length parameter, so as to adjust the cavity length of the resonant cavity mode, and enabling the wavelength of the standing wave of the adjusted resonant cavity to coincide with the peak wavelength of the gain spectrum of the active area of the vertical cavity surface emitting laser.
The invention can realize the adjustment of the cavity length of the resonant cavity under the condition of no shutdown.
The control method of the vertical cavity surface emitting laser provided by the invention comprises the steps of receiving a temperature reading signal of an active area of the vertical cavity surface emitting laser; determining a corresponding cavity length parameter according to the temperature reading signal; and displacing the external cavity mirror of the vertical cavity surface emitting laser along the light path direction according to the cavity length parameter, so as to adjust the cavity length of the resonant cavity mode, and enabling the wavelength of the standing wave of the adjusted resonant cavity to coincide with the peak wavelength of the gain spectrum of the active area of the vertical cavity surface emitting laser. According to the temperature of the active area, the peak wavelength of the gain spectrum of the active area at the temperature can be obtained, and the wavelength of the resonant cavity standing wave is changed along with the cavity length of the resonant cavity, so that the change of the cavity length of the resonant cavity can be realized by adjusting the position of the external cavity mirror, and further the resonant cavity standing wave can be adjusted, and finally the wavelength of the resonant cavity standing wave is coincided with the peak wavelength of the gain spectrum of the active area of the vertical cavity surface emitting laser.
On the basis of the first embodiment, the position of the antinode of the resonant cavity standing wave is further adjusted to obtain a second embodiment, a schematic flow chart of which is shown in fig. 2, and the second embodiment includes:
step S201: temperature reading signals of an active region of the VCSEL are received.
Step S202: and determining a corresponding cavity length parameter according to the temperature reading signal.
Step S203: and displacing the external cavity mirror of the vertical cavity surface emitting laser along the light path direction according to the cavity length parameter, so as to adjust the cavity length of the resonant cavity mode, and enabling the wavelength of the standing wave of the adjusted resonant cavity to coincide with the peak wavelength of the gain spectrum of the active area of the vertical cavity surface emitting laser.
Step S204: and adjusting the position of an antinode of the resonant cavity standing wave according to the determined corresponding cavity length parameter, so that the position of the antinode is coincided with the position of the multiple quantum well of the active region.
The difference between the present embodiment and the foregoing embodiment is that the position of the antinode of the resonant cavity standing wave is further adjusted in the present embodiment, and the remaining steps are the same as those in the foregoing embodiment, and are not described herein again.
In this embodiment, the position of the antinode of the standing wave of the resonant cavity is further adjusted, and the standing wave of the resonant cavity is a standing wave, so that on the premise that the wavelength of the standing wave of the resonant cavity coincides with the peak wavelength of the gain spectrum of the active region, the position of the active region in the resonant cavity can be adjusted to precisely adjust the position of the antinode of the standing wave of the resonant cavity, so that the optical gain of each quantum well can be effectively coupled into the cavity mode, further maximization of the optical gain is realized, the output optical power is improved, and the emission threshold is reduced.
The following describes a control apparatus of a vertical cavity surface emitting laser according to an embodiment of the present invention, and the control apparatus of a vertical cavity surface emitting laser described below and the control method of a vertical cavity surface emitting laser described above may be referred to correspondingly.
Fig. 3 is a block diagram of a control apparatus of a vertical cavity surface emitting laser according to an embodiment of the present invention, and referring to fig. 3, the control apparatus of the vertical cavity surface emitting laser may include:
a receiving module 100, configured to receive a temperature reading signal of an active region of the vcsel;
a determining module 200, configured to determine a corresponding cavity length parameter according to the temperature reading signal;
the adjusting module 300 is configured to displace the external cavity mirror of the vertical cavity surface emitting laser along the light path direction according to the cavity length parameter, so as to adjust the cavity length of the resonant cavity mode, and make the wavelength of the standing wave of the adjusted resonant cavity coincide with the peak wavelength of the gain spectrum of the active region of the vertical cavity surface emitting laser.
The control device of the vertical cavity surface emitting laser provided by the invention comprises a receiving module 100, a control module and a control module, wherein the receiving module 100 is used for receiving a temperature reading signal of an active area of the vertical cavity surface emitting laser; a determining module 200, configured to determine a corresponding cavity length parameter according to the temperature reading signal; the adjusting module 300 is configured to displace the external cavity mirror of the vertical cavity surface emitting laser along the light path direction according to the cavity length parameter, so as to adjust the cavity length of the resonant cavity mode, and make the wavelength of the standing wave of the adjusted resonant cavity coincide with the peak wavelength of the gain spectrum of the active region of the vertical cavity surface emitting laser. According to the temperature of the active area, the peak wavelength of the gain spectrum of the active area at the temperature can be obtained, and the wavelength of the resonant cavity standing wave is changed along with the cavity length of the resonant cavity, so that the change of the cavity length of the resonant cavity can be realized by adjusting the position of the external cavity mirror, and further the resonant cavity standing wave can be adjusted, and finally the wavelength of the resonant cavity standing wave is coincided with the peak wavelength of the gain spectrum of the active area of the vertical cavity surface emitting laser.
As a preferred embodiment, the adjusting module 300 further includes:
and the antinode adjusting unit 310 is configured to adjust a position of an antinode of the resonant cavity standing wave according to the determined corresponding cavity length parameter, so that the position of the antinode coincides with the position of the multiple quantum well of the active region.
The control apparatus of the vertical cavity surface emitting laser in this embodiment is used to implement the aforementioned control method of the vertical cavity surface emitting laser, and therefore, the specific implementation of the control apparatus of the vertical cavity surface emitting laser can be found in the embodiment parts of the control method of the vertical cavity surface emitting laser in the foregoing, for example, the receiving module 100, the determining module 200, and the adjusting module 300 are respectively used to implement steps S101, S102, and S103 in the control method of the vertical cavity surface emitting laser, so that the specific implementation thereof may refer to the description of the corresponding embodiments of each part, and is not repeated herein.
The invention also provides a vertical cavity surface emitting laser, the structure diagram of a specific implementation mode of which is shown in fig. 4, and the vertical cavity surface emitting laser comprises a surface emitting chip, a top cavity mirror 12 and a bottom cavity mirror 13;
the surface emitting chip is arranged between the top cavity mirror 12 and the bottom cavity mirror 13;
at least one of the top cavity mirror 12 and the bottom cavity mirror 13 is an external cavity mirror, and the external cavity mirror can displace along the propagation direction of the light path, so that the length of the resonant cavity of the vertical cavity surface emitting laser can be adjusted.
In addition to the method for controlling the air of the vertical wall surface transmitter, the vertical cavity surface emitting laser provided by the embodiment of the invention is provided with the external cavity mirror, so that the cavity length of the resonant cavity is greatly increased, and the narrowing of the spectral line width is facilitated.
The resonant cavity of the vertical cavity surface emitting laser provided by the invention is composed of a pair of top cavity mirrors 12 and a bottom cavity mirror 13, wherein at least one cavity mirror is an external cavity mirror, namely, three conditions exist, firstly, the top cavity mirror 12 is an epitaxial structure fixed on the surface emitting chip, and the bottom cavity mirror 13 is an external cavity mirror; secondly, the bottom cavity mirror 13 is an epitaxial structure fixed on the surface emitting chip, and the top cavity mirror 12 is an external cavity mirror; and the top cavity mirror 12 and the bottom cavity mirror 13 are both external cavity mirrors. The surface emitting chip comprises an active region 11 and an upper light outlet 17, when the bottom cavity mirror 13 is an epitaxial structure fixed on the surface emitting chip, the bottom light outlet 15 is not provided, and the bottom light outlet 15 is necessary in other cases.
As shown in fig. 4, the bottom cavity mirror 13 in the figure is a bottom cavity mirror 13 of an epitaxial structure, and the top cavity mirror 12 is an external cavity mirror, and certainly, the cavity mirror of the epitaxial structure is not necessarily located at the outermost layer of the surface emitting chip, and may also be located inside the surface emitting chip as shown in fig. 5, the top cavity mirror 12 is an epitaxial structure located inside the surface emitting chip, and the bottom cavity mirror 13 is an external cavity mirror, and of course, both the top cavity mirror 12 and the bottom cavity mirror 13 may also be external cavity mirrors as shown in fig. 6.
The active region 11 functions to provide optical gain under current injection conditions, and generally has a multiple quantum well structure;
the light-emitting port 17 is located at one side of the active region 11 and is a top surface light-emitting port of the surface-emitting chip;
the bottom light outlet 15 which may be included is located on the side of the active region 11 opposite to the top light outlet 17, and is a bottom surface output light port of the surface emitting chip; the bottom light outlet 15 is usually provided with a broadband antireflection coating to reduce fresnel reflection of radiation light on the end face of the light outlet and improve the light transmission efficiency of the gain resonant cavity. Bottom electrodes 14 are protruded from two sides of the bottom light outlet 15, and top electrodes 16 are protruded from two sides of the top light outlet 17.
Particularly, the external cavity mirror is a plano-concave lens, the refraction surface faces the surface emitting chip when the external cavity mirror is placed, and the position is adjusted to enable the light outlet corresponding to the surface emitting chip to be located near the spherical center of the corresponding plano-concave lens, so that stable light beam feedback and resonance are realized. In addition, the light refracting surface of the plano-concave lens can be used for preparing the broadband high-reflection film so as to improve the feedback efficiency; the other side plane can also prepare the broadband antireflection coating to reduce the optical power loss.
As a preferable scheme, when the vcsel is a long-wavelength vcsel, both the top cavity mirror 12 and the bottom cavity mirror 13 are external cavity mirrors. Because the thickness of a Distributed Bragg Reflector (DBR) or a multilayer dielectric film reflector is very large for a long-wavelength InP-based or GaSb-based semiconductor material system, the manufacturing is difficult, and the introduced loss is significantly increased, the top cavity mirror 12 and the bottom cavity mirror 13 are simultaneously replaced by optical elements of an external cavity mirror, so that the above disadvantages are avoided, and the performance is further improved.
In addition, the active region 11 of the surface-emitting chip is any one of a GaAs-based active region 11, an InP-based active region 11, and a GaSb-based active region 11.
The embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
It is to be noted that, in the present specification, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
Those of skill would further appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware, computer software, or combinations of both, and that the various illustrative components and steps have been described above generally in terms of their functionality in order to clearly illustrate this interchangeability of hardware and software. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the implementation. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present invention.
The steps of a method or algorithm described in connection with the embodiments disclosed herein may be embodied directly in hardware, in a software module executed by a processor, or in a combination of the two. A software module may reside in Random Access Memory (RAM), memory, Read Only Memory (ROM), electrically programmable ROM, electrically erasable programmable ROM, registers, hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art.
The vertical cavity surface emitting laser, the control method thereof and the control device thereof provided by the present invention are described in detail above. The principles and embodiments of the present invention are explained herein using specific examples, which are presented only to assist in understanding the method and its core concepts. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention.
Claims (10)
1. A method of controlling a vertical cavity surface emitting laser, comprising:
receiving a temperature reading signal of an active region of the vertical cavity surface emitting laser;
determining a corresponding cavity length parameter according to the temperature reading signal;
and displacing the external cavity mirror of the vertical cavity surface emitting laser along the light path direction according to the cavity length parameter, so as to adjust the cavity length of the resonant cavity mode, and enabling the wavelength of the standing wave of the adjusted resonant cavity to coincide with the peak wavelength of the gain spectrum of the active area of the vertical cavity surface emitting laser.
2. A method of controlling a vertical cavity surface emitting laser according to claim 1, further comprising, after determining the corresponding cavity length parameter:
and adjusting the position of an antinode of the resonant cavity standing wave according to the determined corresponding cavity length parameter, so that the position of the antinode is coincided with the position of the multiple quantum well of the active region.
3. A control apparatus for a vertical cavity surface emitting laser, comprising:
the receiving module is used for receiving a temperature reading signal of an active area of the vertical cavity surface emitting laser;
the determining module is used for determining a corresponding cavity length parameter according to the temperature reading signal;
and the adjusting module is used for displacing the external cavity mirror of the vertical cavity surface emitting laser along the light path direction according to the cavity length parameter so as to adjust the cavity length of the resonant cavity mode and enable the wavelength of the standing wave of the adjusted resonant cavity to coincide with the peak wavelength of the active region gain spectrum of the vertical cavity surface emitting laser.
4. A control apparatus of a vertical cavity surface emitting laser according to claim 3, wherein said adjusting module further comprises:
and the antinode adjusting unit is used for adjusting the position of an antinode of the resonant cavity standing wave according to the determined corresponding cavity length parameter so as to enable the position of the antinode to coincide with the position of the multi-quantum well of the active region.
5. A vertical cavity surface emitting laser is characterized by comprising a surface emitting chip, a top cavity mirror and a bottom cavity mirror;
the surface emitting chip is arranged between the top cavity mirror and the bottom cavity mirror;
at least one of the top cavity mirror and the bottom cavity mirror is an external cavity mirror, and the external cavity mirror can displace along the propagation direction of the light path to realize the adjustment of the length of the resonant cavity of the vertical cavity surface emitting laser.
6. A vertical Cavity surface emitting laser according to claim 5 wherein said external cavity mirror is a plano-concave lens.
7. A vertical cavity surface emitting laser according to claim 6, wherein said refractive surface of said plano-concave lens is provided with a broadband high-reflection film.
8. A vertical cavity surface emitting laser according to claim 6, wherein a surface opposite to said light refracting surface of said plano-concave lens is provided with a broadband antireflection film.
9. A vertical cavity surface emitting laser according to claim 5, wherein said active region of said surface emitting chip is either one of a GaAs-based active region or an InP-based active region or a GaSb-based active region.
10. A vertical cavity surface emitting laser according to any one of claims 5 to 9, wherein said vertical cavity surface emitting laser is a long wavelength vertical cavity surface emitting laser;
the top cavity mirror and the bottom cavity mirror are both external cavity mirrors.
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| CN210092563U (en) * | 2019-12-12 | 2020-02-18 | 长春中科长光时空光电技术有限公司 | Vertical external cavity surface emitting laser |
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