CN107404061A - A kind of semiconductor laser outer cavity coherent closes beam system - Google Patents
A kind of semiconductor laser outer cavity coherent closes beam system Download PDFInfo
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- CN107404061A CN107404061A CN201710779811.XA CN201710779811A CN107404061A CN 107404061 A CN107404061 A CN 107404061A CN 201710779811 A CN201710779811 A CN 201710779811A CN 107404061 A CN107404061 A CN 107404061A
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- laser
- semiconductor laser
- module
- mirror
- collimating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
- G02B27/14—Beam splitting or combining systems operating by reflection only
Abstract
This application discloses a kind of semiconductor laser outer cavity coherent to close beam system, the system using reflecting module replace Darman raster realize the exit face of noise spectra of semiconductor lasers second laser wavelength locking and reflection, reduce due to using Darman raster realize wavelength locking and the zone of reflections come substantial amounts of laser energy loss；And the reflecting module can change the distance in the laser emitting direction of the semiconductor laser and the semiconductor laser by control module, the purpose of different light paths is selected so as to realize for the shoot laser wavelength of different semiconductor lasers, light path need not be changed by mobile semiconductor laser during coherently combined, and then reduce the stability requirement during coherently combined for semiconductor laser.
Description
Technical field
The application is related to field of laser device technology, and beam is closed more specifically to a kind of semiconductor laser outer cavity coherent
System.
Background technology
Laser (Light Amplification by Stimulated Emission of Radiation, LASER),
The characteristics of going with coherence with brightness height, directionality, monochromaticjty, extensively using the every field in production and living.
In all kinds of lasers for producing laser, semiconductor laser has high efficiency, small size, high life and is easy to collect
Into the advantages that, but semiconductor laser unit device is often present that power is smaller, the angle of divergence is larger, beam quality it is impossible to meet
The problems such as industrial and military demand, thus need to solve the above problems by closing the method for beam.
The conjunction Shu Fangfa being currently known has：Beam is closed in space, beam, spectrum beam combination, coherently combined, polarization coupling are closed in waveguide；
In this several conjunction Shu Fangfa, coherently combined has obvious advantage in terms of beam quality is improved, however, coherently combined is for phase
The requirement of position is very harsh, needs to move semiconductor laser during adjustment to change light path so as to realize coherent subtraction；
This stability requirement for laser is very high, but also to use Dammam (Dammann) grating, the diffraction of Darman raster
Efficiency is about 77%, has part energy and loses.
The content of the invention
In order to solve the above technical problems, the invention provides a kind of semiconductor laser outer cavity coherent to close beam system, with reality
The stability requirement for semiconductor laser during semiconductor laser coherently combined is now reduced, and reduces semiconductor
The purpose of the laser energy loss of laser.
To realize above-mentioned technical purpose, the embodiments of the invention provide following technical scheme：
A kind of semiconductor laser outer cavity coherent closes beam system, applied to the laser system with multiple semiconductor lasers
System, the semiconductor laser outer cavity coherent, which closes beam system, to be included：Laser processing modules, the first collimating module, the second collimation mould
Block and reflecting module；Wherein,
First collimating module and laser processing modules are arranged in the first of the multiple semiconductor laser and gone out successively
Penetrate face side；
Second collimating module and reflecting module are arranged in the second exit facet of the multiple semiconductor laser successively
Side；
The collimating module is used to carry out collimation processing to the shoot laser of the semiconductor laser；
The reflecting module can move in the laser emitting direction of the semiconductor laser, for the semiconductor to be swashed
The laser lock-on of the exit face of light device second returns in preset wavelength, and along original optical path, with the semiconductor laser
Pending laser is formed after the coherent laser beam combination of one exit face；
The laser processing modules are used to after carrying out optical treatment to the pending laser of incidence be emitted, and are swashed with obtaining outgoing
Light.
Optionally, first collimating module includes N number of sub- collimation unit, and it is accurate that second collimating module includes N number of son
Straight unit；
The sub- collimation unit includes the fast axis collimation set gradually along the semiconductor laser exit facet central optical axis
Mirror and slow axis collimating mirror；
The fast axis collimation mirror has antireflective film away from the side surface of semiconductor laser one；
The slow axis collimating mirror has antireflective film away from the side surface of semiconductor laser one；
N is equal to the quantity of the semiconductor laser, a sub- collimation unit and a semiconductor laser
It is corresponding.
Optionally, the reflecting module includes N number of reflective optical device；
The central optical axis of one reflective optical device and the exit facet central optical axis of a semiconductor laser
Overlap；
N is equal to the quantity of the semiconductor laser, a reflective optical device and a semiconductor laser
Device is corresponding.
Optionally, the reflective optical device is diffraction grating or speculum.
Optionally, the diffraction efficiency of the diffraction grating is more than or equal to 95%.
Optionally, the reflectivity of the speculum meets laser starting of oscillation requirement.
Optionally, the laser processing modules include：Fourier transform lens, spatial filter and output coupling mirror；Its
In,
The central optical axis of the Fourier transform lens, spatial filter and output coupling mirror overlap；
Central optical axis symmetry arrangement of the multiple semiconductor laser on the Fourier transform lens；
The output coupling mirror has antireflective film, the output coupling mirror direction away from the side surface of spatial filter one
The side surface of spatial filter one has reflectance coating.
Optionally, the output coupling mirror is plano-concave lens, and the concave surface of the plano-concave lens is towards the Fourier transformation
Lens side is set, and the concave surface of the plano-concave lens and the convex surface of the Fourier transform lens are complementary.
Optionally, in addition to：Control module；
The control module is used to control the reflecting module to move in the laser emitting direction of the semiconductor laser.
Optionally, the control module is stepper motor or motor.
It can be seen from the above technical proposal that the embodiments of the invention provide a kind of semiconductor laser outer cavity coherent to close beam
System, the system realize the ripple of the laser of the exit face of noise spectra of semiconductor lasers second using reflecting module instead of Darman raster
Long locking and reflection, reduce due to realizing substantial amounts of laser energy damage that wavelength locking and the zone of reflections come using Darman raster
Consumption；And the reflecting module can move in the laser emitting direction of the semiconductor laser, partly be led described with changing
The laser emitting direction of body laser and the distance of the semiconductor laser, so as to realize for different semiconductor lasers
Shoot laser wavelength and select the purpose of different light paths, it is not necessary to pass through mobile semiconductor laser during coherently combined
Device changes light path, and then reduces the stability requirement during coherently combined for semiconductor laser.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
The embodiment of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can also basis
The accompanying drawing of offer obtains other accompanying drawings.
Fig. 1 is that a kind of structure for semiconductor laser outer cavity coherent conjunction beam system that one embodiment of the application provides is shown
It is intended to；
Fig. 2 is the structure that a kind of semiconductor laser outer cavity coherent that another embodiment of the application provides closes beam system
Schematic diagram.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not made
Embodiment, belong to the scope of protection of the invention.
The embodiment of the present application provides a kind of semiconductor laser outer cavity coherent and closes beam system, as shown in figure 1, applied to tool
There is multiple semiconductor laser A10 laser system, the semiconductor laser A10 outer cavity coherents, which close beam system, to be included：Laser
Processing module 300, the first collimating module 100, the second collimating module 200 and reflecting module 400；Wherein,
First collimating module 100 and laser processing modules 300 are arranged in the multiple semiconductor laser A10 successively
The first exit facet side；
Second collimating module 200 and reflecting module 400 are arranged in the of the multiple semiconductor laser A10 successively
Two exit facet sides；
The collimating module is used to carry out collimation processing to the shoot laser of the semiconductor laser A10；
The reflecting module 400 can move in the laser emitting direction of the semiconductor laser, for partly being led described
The laser lock-on of the exit faces of body laser A10 second reflects in preset wavelength, and along original optical path, to swash with the semiconductor
Pending laser is formed after the coherent laser beam combination of light device the first exit faces of A10；
The laser processing modules 300 are used to after carrying out optical treatment to the pending laser of incidence be emitted, to be gone out
Penetrate laser.
Reference picture 1, the laser of the exit faces of semiconductor laser A10 second is by the second collimating module 200
After collimation processing, its fast axis divergence angle and slow axis divergence are compressed, in quick shaft direction and slow-axis direction with the shape of nearly directional light
Formula is emitted, and after reflections by the reflecting module 400 of laser of these outgoing, wavelength locking is in preset wavelength, and along former light
Road is returned in semiconductor laser A10, and from the first exit face of the semiconductor laser A10, is partly led with described
Pending laser is formed after the coherent laser beam combination of the exit faces of body laser A10 first；
The pending laser passes through Fourier transformation, filtering, resonance, amplification and the phase of the laser processing modules 300
It is emitted after the locking processing of position, the laser after outgoing is referred to as the shoot laser.
The diffraction efficiency of the diffraction grating is preferably greater than or equal to 95%.
It should be noted that the system realizes noise spectra of semiconductor lasers A10 the using reflecting module 400 instead of Darman raster
The wavelength locking and reflection of the laser of two exit faces, are reduced due to realizing wavelength locking and the zone of reflections using Darman raster
The substantial amounts of laser energy loss come；And the reflecting module 400 is moved in the laser emitting direction of the semiconductor laser
It is dynamic, to change the distance in the laser emitting direction of the semiconductor laser A10 and the semiconductor laser A10, so as to
Realize the shoot laser wavelength for different semiconductor laser A10 and select the purpose of different light paths, it is not necessary to relevant
Close and light path changed by mobile semiconductor laser A10 during beam, so reduce during coherently combined for
Semiconductor laser A10 stability requirement.
On the basis of above-described embodiment, in one embodiment of the application, appoint right reference chart 1, first collimation
Module 100 includes N number of sub- collimation unit M10, and second collimating module 200 includes N number of sub- collimation unit M10；
The sub- collimation unit M10 is fast including being set gradually along the semiconductor laser A10 exit facet central optical axis
Axle collimating mirror M11 and slow axis collimating mirror M12；
The fast axis collimation mirror M11 has antireflective film away from the side surfaces of semiconductor laser A10 mono-；
The slow axis collimating mirror M12 has antireflective film away from the side surfaces of semiconductor laser A10 mono-；
N is equal to the quantity of the semiconductor laser A10, the sub- collimation unit M10 and one in a collimating module
The individual semiconductor laser A10 is corresponding.
Optionally, the reflecting module 400 includes N number of reflective optical device；
The central optical axis of one reflective optical device and semiconductor laser A10 exit facet center light
Overlapping of axles；
N is equal to the quantity of the semiconductor laser A10, and a reflective optical device swashs with a semiconductor
Light device A10 is corresponding.
Optionally, with reference to figure 1 and Fig. 2, the reflective optical device is diffraction grating 410 or speculum 420.
It should be noted that each reflective optical device swashs apart from corresponding semiconductor in the reflecting module 400
Light device A10 distance can be adjusted by the control module, realize semiconductor laser A10 shoot lasers to the reflection optics
The change of the light path of device.
When the spectrum width of the semiconductor laser A10 is narrower, and pattern is less, the conduct of speculum 420 can be used
The reflective optical device；Accordingly, when the spectrum width of the semiconductor laser A10 is wider, and pattern is more, preferably adopt
The reflective optical device is used as by the use of diffraction grating 410.
The diffraction efficiency of the diffraction grating 410 of use is preferably greater than or equal to 95%, groove, the polarization of diffraction grating 410
It is determined on a case-by-case basis with wavelength；
The reflectivity of the speculum 420 of use is preferably greater than 99%, to meet laser starting of oscillation requirement.
Optionally, the semiconductor laser A10 can be that single-tube semiconductor laser A10 or linear array are partly led
Body laser A10, it can also be repeatedly array semiconductor laser A10.
On the basis of above-described embodiment, in another embodiment of the application, referring still to Fig. 1, the light processing
Module includes：Fourier transform lens 310, spatial filter 320 and output coupling mirror 330；Wherein,
The central optical axis of the Fourier transform lens 310, spatial filter 320 and output coupling mirror 330 overlap；
Central optical axis symmetry arrangements of the multiple semiconductor laser A10 on the Fourier transform lens 310；
The output coupling mirror 330 has antireflective film, the output coupling away from the side surface of spatial filter 320 1
Mirror 330 has reflectance coating towards the side surface of spatial filter 320 1.
It should be noted that the fast axis collimation mirror M11, slow axis collimating mirror M12 and the anti-reflection on the surface of output coupling mirror 330
The reflectivity of film is preferably smaller than 1%, and the preferred scope of the reflectivity of the reflectance coating on the surface of output coupling mirror 330 is 9%-
60%, including endpoint value.The application is not limited its specific value, specifically depending on actual conditions.
The spatial filter 320 can filter the pattern of fast axle in laser, can also filter the pattern of slow axis in laser,
Specifically depending on actual demand.
Preferably, the output coupling mirror 330 is plano-concave lens, and the concave surface of the plano-concave lens becomes towards the Fourier
The setting of the side of lens 310 is changed, and the concave surface of the plano-concave lens and the convex surface of the Fourier transform lens 310 are complementary.
It should be noted that the concave surface of the plano-concave lens and the convex surface complementation of the Fourier transform lens 310 also may be used
The concave of referred to as described plano-concave lens is equal to the crowning radius of the Fourier transform lens 310, the mesh so set
Be ensure plano-concave lens reflectance coating reflection laser can be returned with original optical path, into the semiconductor laser A10, make
For feedback laser.
On the basis of above-described embodiment, in the preferred embodiment of the application, the semiconductor laser exocoel
Coherently combined system also includes：Control module；
The control module is used to control the reflecting module 400 to move in the laser emitting direction of the semiconductor laser
It is dynamic.
Optionally, the control module can be stepper motor, can also be motor, the precision of its adjustable range with it is described
Semiconductor laser A10 optical maser wavelength is relevant.But in the other embodiment of the application, the side that can also manually adjust
Formula adjusts the reflecting module in the laser emitting direction of the semiconductor laser A10 with the semiconductor laser A10's
Distance.The application is not limited this, specifically depending on actual conditions.
In summary, the embodiment of the present application provides a kind of semiconductor laser A10 outer cavity coherents and closes beam system, the system
Realize that the wavelength of the laser of the exit faces of noise spectra of semiconductor lasers A10 second is locked instead of Darman raster using reflecting module 400
Fixed and reflection, reduce due to realizing substantial amounts of laser energy loss that wavelength locking and the zone of reflections come using Darman raster；And
And the reflecting module 400 can be changed in the laser emitting direction of the semiconductor laser A10 and institute by control module
Semiconductor laser A10 distance is stated, is selected so as to realize for different semiconductor laser A10 shoot laser wavelength
The purpose of different light paths, it is not necessary to light path is changed by mobile semiconductor laser A10 during coherently combined, and then
Reduce the stability requirement for semiconductor laser A10 during coherently combined.
Each embodiment is described by the way of progressive in this specification, what each embodiment stressed be and other
The difference of embodiment, between each embodiment identical similar portion mutually referring to.
The foregoing description of the disclosed embodiments, professional and technical personnel in the field are enable to realize or using the present invention.
A variety of modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and principles disclosed herein and features of novelty phase one
The most wide scope caused.
Claims (10)
1. a kind of semiconductor laser outer cavity coherent closes beam system, it is characterised in that applied to multiple semiconductor lasers
Laser system, the semiconductor laser outer cavity coherent, which closes beam system, to be included：Laser processing modules, the first collimating module,
Two collimating modules and reflecting module；Wherein,
First collimating module and laser processing modules are arranged in the first exit facet of the multiple semiconductor laser successively
Side；
Second collimating module and reflecting module are arranged in the second exit facet side of the multiple semiconductor laser successively；
The collimating module is used to carry out collimation processing to the shoot laser of the semiconductor laser；
The reflecting module can move in the laser emitting direction of the semiconductor laser, for by the semiconductor laser
The laser lock-on of second exit face returns in preset wavelength, and along original optical path, to go out with the semiconductor laser first
Pending laser is formed after penetrating the coherent laser beam combination of face outgoing；
The laser processing modules are used to after carrying out optical treatment to the pending laser of incidence be emitted, to obtain shoot laser.
2. system according to claim 1, it is characterised in that first collimating module includes N number of sub- collimation unit, institute
Stating the second collimating module includes N number of sub- collimation unit；
The sub- collimation unit include the fast axis collimation mirror set gradually along the semiconductor laser exit facet central optical axis and
Slow axis collimating mirror；
The fast axis collimation mirror has antireflective film away from the side surface of semiconductor laser one；
The slow axis collimating mirror has antireflective film away from the side surface of semiconductor laser one；
N is equal to the quantity of the semiconductor laser, and a sub- collimation unit is relative with a semiconductor laser
Should.
3. system according to claim 1, it is characterised in that the reflecting module includes N number of reflective optical device；
The central optical axis of one reflective optical device overlap with the exit facet central optical axis of a semiconductor laser；
N is equal to the quantity of the semiconductor laser, a reflective optical device and a semiconductor laser phase
It is corresponding.
4. system according to claim 3, it is characterised in that the reflective optical device is diffraction grating or speculum.
5. system according to claim 4, it is characterised in that the diffraction efficiency of the diffraction grating is more than or equal to
95%.
6. system according to claim 4, it is characterised in that the reflectivity of the speculum meets laser starting of oscillation requirement.
7. system according to claim 1, it is characterised in that the laser processing modules include：Fourier transform lens,
Spatial filter and output coupling mirror；Wherein,
The central optical axis of the Fourier transform lens, spatial filter and output coupling mirror overlap；
Central optical axis symmetry arrangement of the multiple semiconductor laser on the Fourier transform lens；
The output coupling mirror has antireflective film away from the side surface of spatial filter one, and the output coupling mirror is described in
The side surface of spatial filter one has reflectance coating.
8. system according to claim 7, it is characterised in that the output coupling mirror is plano-concave lens, and the plano-concave is saturating
The concave surface of mirror is set towards the Fourier transform lens side, and the concave surface of the plano-concave lens and the Fourier transformation are saturating
The convex surface of mirror is complementary.
9. system according to claim 1, it is characterised in that also include：Control module；
The control module is used to control the reflecting module to move in the laser emitting direction of the semiconductor laser.
10. system according to claim 9, it is characterised in that the control module is stepper motor or motor.
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| CN201710779811.XA CN107404061B (en) | 2017-09-01 | 2017-09-01 | A kind of semiconductor laser outer cavity coherent conjunction beam system |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113376615A (en) * | 2021-04-27 | 2021-09-10 | 探维科技(北京)有限公司 | Transmitting system capable of remarkably reducing height of laser radar |
| CN113823996A (en) * | 2021-07-28 | 2021-12-21 | 中国工程物理研究院应用电子学研究所 | Method and system for realizing high-power near-diffraction limit semiconductor laser |
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