CN204067850U - A kind of beam merging apparatus of semiconductor laser tube core - Google Patents
A kind of beam merging apparatus of semiconductor laser tube core Download PDFInfo
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- CN204067850U CN204067850U CN201420068597.9U CN201420068597U CN204067850U CN 204067850 U CN204067850 U CN 204067850U CN 201420068597 U CN201420068597 U CN 201420068597U CN 204067850 U CN204067850 U CN 204067850U
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Abstract
A kind of beam merging apparatus of semiconductor laser tube core, the tube core (1) comprising multiple semiconductor laser and the fast axis collimation lens (2) be arranged on described semiconductor laser tube core output light path, volume Bragg grating (3), fast and slow axis collimating lens (4), holographic grating (5) and optical beam transformation set of lenses (6), it is characterized in that: the back side of described volume Bragg grating (3) is placed with fast and slow axis collimating lens (4), make the laser beam from each semiconductor laser tube core, on+1 order diffraction striped, be diffracted into same direction, the semiconductor laser realizing Multi-core (1) closes bundle.Conjunction bundle technology of the present utility model improves the wavelength stability of each semiconductor laser tube core, also improves the job stability of whole system.This conjunction bundle technology be realize high brightness, powerful direct semiconductor Optical Maser System provides new method and path.
Description
Technical field
The utility model relates to a kind of beam merging apparatus of semiconductor laser tube core, particularly relates to by the beam merging apparatus of the semiconductor laser tube core of the wavelength linear of Volume Bragg grating frequency stabilization.
Background technology
Along with the application of high power laser technology in industry, medical treatment and national defence, more and more require the LASER Light Source that more powerful, brightness is higher.These high power laser light sources comprise first generation carbon dioxide LASER Light Source, and the second generation take YAG as the Solid State Laser light source of representative, third generation fiber laser light source and forth generation direct semiconductor light source.Direct semiconductor needs a lot of semiconductor laser single tubes to join together, and produces high power laser.Therefore semiconductor laser conjunction bundle technology just seems particularly important.Existing conjunction bundle technology is had living space and is closed bundle, but it only can improve power and can not improve brightness; Polarization coupling, can improve brightness, but can only close bundle two-way laser; Wavelength coupling, can improve power and brightness, but it is supplied to each laser single tube by unified external reflectance, and the fluctuation of external reflection directly can affect operating state and the power output of each single-tube laser.High power semiconductor lasers closes bundle needs a kind of new technology to meet the requirement of high-power and high-luminance conjunction bundle.
Summary of the invention
For the deficiencies in the prior art, the utility model proposes the multi-die semiconductor laser conjunction bundle technology that a kind of novel volume Bragg grating by external wavelength linear chrip carries out wavelength locking, be that multiple semiconductor laser tube core is carried out wavelength locking respectively, realized the device of wavelength coupling by dispersion element.
The technical scheme that the utility model adopts is: a kind of beam merging apparatus of semiconductor laser tube core, the tube core comprising multiple semiconductor laser and the fast axis collimation lens be arranged on described semiconductor laser tube core output light path, volume Bragg grating, fast and slow axis collimating lens, holographic grating and optical beam transformation set of lenses, multiple centre wavelength is that the tube core of 915nm is arranged in a linear, be arranged on band microchannel water circulation heat sink on, in the outside of fast axis collimation lens, volume Bragg grating is installed, along the orientation of tube core, the center reflection wavelength of volume Bragg grating is linearly warbled arrangement, it is characterized in that: the described volume Bragg grating back side is placed with fast and slow axis collimating lens, make the laser beam from each semiconductor laser tube core, collimated light beam is become after these lens, project on holographic grating, select the screen periods of holographic grating, direction of rotation and the space length with tube core, make the laser beam of the different wave length from each tube core, on+1 order diffraction striped, be diffracted into same direction, the semiconductor laser realizing Multi-core closes bundle.
The wave spread of described volume Bragg grating is 20nm, and centre wavelength is 915-10nm, and the centre wavelength of the tube core of maximum wavelength is 915+10nm, and each middle tube core wavelength is selected according to the principle of its locus and linear chrip.
The volume Bragg grating that the tube core of described each semiconductor laser is corresponding with it forms the associating laser formed, its optical maser wavelength exported is determined by the center reflection wavelength of the volume Bragg grating of its correspondence, the corresponding Volume Bragg grating of each tube core.
The tube core of described multiple semiconductor lasers can be the tube core be separated, and also can be laser bar bar.
The center reflection wavelength of described multiple volume Bragg gratings alongst linearly changes, and center reflection wavelength is in 700 ~ 1100 nanometer range, and foveal reflex rate is 5% ~ 50%.
High-reflecting film has been plated in tube core one end of described semiconductor laser, and the other end has plated anti-reflection film, and what cause to suppress tube core F-P cavity pattern sharply penetrates, and is conducive to volume Bragg grating and realizes wavelength locking by optical feedback.
The beneficial effects of the utility model are: 1, the utility model provides an outside volume Bragg grating to carry out wavelength locking to each semiconductor laser tube core, can regulate separately, enhance the operability of technique to each laser tube core.2, outside volume Bragg grating has carried out stronger wavelength locking to each semiconductor laser tube core.3, when minority semiconductor laser tube core operating state changes, the work of whole system can not be destroyed.When dispersion element departs from linear, the centre wavelength regulating outside volume Bragg grating still can be passed through, or the horizontal level of Volume Bragg grating, correct.The reliability and stability of 4 systems improve.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
Fig. 2 is the distribution map of each semiconductor laser tube core output wavelength.
Fig. 3 (a) is the principle schematic of the positive crossed disperstion of holographic grating.
Fig. 3 (b) is the principle schematic of holographic grating reverse dispersion.
In figure: 1 tube core, 2 fast axis collimation lens, 3 volume Bragg gratings, 4 fast and slow axis collimating lenses, 5 holographic gratings, 6 optical beam transformation set of lenses.
Embodiment 1:
Being known by Fig. 1, is the beam merging apparatus schematic diagram of multiple semiconductor laser of the present utility model.The tube core 1 being the semiconductor laser of 915nm by multiple nominal center wavelength be arranged on band microchannel water circulation heat sink on, multiple tube core is arranged in a linear.Fast axis collimation lens 2 is installed to each tube core and carries out fast axis collimation.In the outside of fast axis collimation lens 2, volume Bragg grating 3 is installed.Along orientation of these row of tube core 1, the center reflection wavelength of volume Bragg grating 3 is linearly warbled arrangement.Select the distribution of its wavelength to be 20nm, namely the centre wavelength of the tube core of minimum wavelength is 915-10nm, and the centre wavelength of the tube core of maximum wavelength is 915+10nm.Each middle tube core wavelength is selected according to the principle of its locus and linear chrip.After volume Bragg grating 3, place fast and slow axis collimating lens 4, make the laser beam from each semiconductor laser tube core, after these lens, become collimated light beam, project on holographic grating 5.The screen periods of suitable selection holographic grating 5, direction of rotation and the space length with semiconductor laser tube core, make it just by the laser beam of the different wave length from each tube core 1, on+1 order diffraction striped, can be diffracted into same direction.
It is 70 degree that the fast axle of fast axis collimation lens 2 exports the angle of divergence naturally.The output beam angle of divergence of tube core 1 is first collimated to identical with the beam divergence angle that slow axis exports naturally by fast axis collimation lens 2, is here 15 degree.Beam collimation is less parallel light beam by fast and slow axis collimating lens 4 again, projects on holographic grating 5.This holographic grating 5 is the balzed grating, (Blazedgrating) of right+1 order diffraction.The light beam that holographic grating exports, carries out optical beam transformation through optical beam transformation set of lenses 6, becomes the collimated light beam that radius is thinner.Be divided into one group by every for the tube core of semiconductor laser array six, drive with constant-current supply.
Conjunction Shu Yuanli of the present utility model is described as follows: the principle of first illustratively volume Bragg grating 3 wavelength locking.High-reflecting film has been plated in one end of semiconductor laser tube core 1, and the other end has plated anti-reflection film.HR film and VBG combine and constitute laserresonator, and HR does not have wavelength selectivity, and VBG has wavelength selectivity, and the output wavelength of final laser is decided by VBG.Here it is, and outer body grating carries out the principle of wavelength locking.
As shown in Figure 2.It is the distribution map of each semiconductor laser tube core output wavelength.According to the center reflection wavelength of one group of body grating of rectilinear direction arrangement, this wavelength is linearly linear change, sees " reflectance versus wavelength " curve in Fig. 2.Due to wavelength locking effect, according to the output wavelength of one group of semiconductor laser tube core of rectilinear direction arrangement, it is also linearly linear change.See " luminous power-wavelength " curve in Fig. 2.
As shown in Fig. 3 (a), then the principle of illustratively positive crossed disperstion and reverse dispersion.This is common positive crossed disperstion.When a branch of directional light at a certain angle oblique be mapped on holographic grating 5 time, 0 grade can be occurred, ± 1 grade, ± 2 order diffractions.Here only use 0 order diffraction, can use the balzed grating, strengthened 0 order diffraction, improve 0 order diffraction efficiency.When incident angle is certain time, different incident wavelengths, can produce different output angle of diffraction.Near angle when first approximation, angle of diffraction and incident wavelength linear.
As shown in Figure 3 (b), reverse dispersion is referred to as.By above light path conversely, we use the light beam directive holographic grating with above-mentioned identical multichannel different wave length, and according to reversibility of optical path, we can find that at this time all these light beams are after diffraction, all can be merged into a light beam and get on.All incident wavelength compositions are contained inside this light beam.
Core of the present utility model is the outer body Bragg grating arranged by linear chrip, respectively wavelength locking is carried out to corresponding semiconductor laser tube core, these wavelength locking are the linear array of linear chrip, are combined into a branch of by the reverse dispersion of holographic grating by the light beam of these different wave lengths.
The utility model proposes the volume Bragg grating with each semiconductor laser single tube of a series of next-door neighbour, and along rectilinear direction arrangement, the centre wavelength of these body gratings linearly changes, also referred to as linear chrip.The optical maser wavelength exported through each semiconductor laser single tube of these body grating light feedback is also distribution of linearly warbling, then through holographic grating dispersion element, be merged on same direction by the laser of all these wavelength, the semiconductor laser realizing Multi-core closes bundle.Brightness and luminous power are obtained for and improve significantly.
In light path, be followed successively by semiconductor laser tube core, fast axis collimation lens, volume Bragg grating, fast and slow axis collimating lens, holographic grating, focus on and expand/contracting beam optics set of lenses.On radiating mode, each semiconductor element is by heat sink and refrigerating plant below.On circuit, each semiconductor laser tube core can drive separately, also severally can be divided into one group and carry out associating driving.
Combine above and the utility model institute preferred embodiment is illustrated; but above-described embodiment can not be interpreted as the restriction to the utility model protection range; all equivalences done according to the utility model Spirit Essence change or modify; such as promote and fold battle array etc. for 2 dimension diodes, all should be encompassed within protection range of the present utility model.
Claims (6)
1. the beam merging apparatus of a semiconductor laser tube core, the tube core (1) comprising multiple semiconductor laser and the fast axis collimation lens (2) be arranged on described semiconductor laser tube core output light path, volume Bragg grating VBG(3), fast and slow axis collimating lens (4), holographic grating (5) and optical beam transformation set of lenses (6), multiple tube core (1) be arranged in a linear be arranged on band microchannel water circulation heat sink on, in the outside of fast axis collimation lens (2), volume Bragg grating (3) is installed, along the orientation of tube core (1), the center reflection wavelength of volume Bragg grating (3) is linearly warbled arrangement, it is characterized in that: the back side of described volume Bragg grating (3) is placed with fast and slow axis collimating lens (4), make the laser beam from each semiconductor laser tube core, collimated light beam is become after these lens, project on holographic grating (5), select the screen periods of holographic grating (5), direction of rotation and the space length with tube core (1), make the laser beam of the different wave length from each tube core, on+1 order diffraction striped, be diffracted into same direction, the semiconductor laser realizing Multi-core (1) closes bundle.
2. the beam merging apparatus of a kind of semiconductor laser tube core according to claim 1, it is characterized in that: the wave spread of described volume Bragg grating (3) is 20nm, centre wavelength is 915-10nm, the centre wavelength of the tube core of maximum wavelength is 915+10nm, and middle each tube core (1) wavelength is selected according to the principle of its locus and linear chrip.
3. the beam merging apparatus of multiple-wavelength laser according to claim 1, it is characterized in that: the volume Bragg grating (3) that the tube core (1) of described each semiconductor laser is corresponding with it forms associating laser, and its optical maser wavelength exported is determined by the center reflection wavelength of the volume Bragg grating (3) of its correspondence.
4. the beam merging apparatus of a kind of semiconductor laser tube core according to claim 1, is characterized in that: the tube core (1) of described multiple semiconductor lasers can be the tube core be separated, and also can be laser bar bar bar.
5. the beam merging apparatus of a kind of semiconductor laser tube core according to claim 1, it is characterized in that: the center reflection wavelength of described multiple volume Bragg gratings (3) alongst linearly changes, center reflection wavelength is in 700 ~ 1100 nanometer range, and foveal reflex rate is 5% ~ 50%.
6. the beam merging apparatus of a kind of semiconductor laser tube core according to claim 1, is characterized in that: high anti-HR film has been plated in one end of semiconductor laser tube core (1), and the other end has plated anti-reflection AR film.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420068597.9U CN204067850U (en) | 2013-07-02 | 2014-02-17 | A kind of beam merging apparatus of semiconductor laser tube core |
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| CN201320390802 | 2013-07-02 | ||
| CN201320390802.9 | 2013-07-02 | ||
| CN201420068597.9U CN204067850U (en) | 2013-07-02 | 2014-02-17 | A kind of beam merging apparatus of semiconductor laser tube core |
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| CN204067850U true CN204067850U (en) | 2014-12-31 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105406353A (en) * | 2015-12-11 | 2016-03-16 | 长春理工大学 | Multiple single-tube beam-combination semiconductor lasers based on grating isosceles prism |
| CN105428996A (en) * | 2015-12-09 | 2016-03-23 | 中国科学院长春光学精密机械与物理研究所 | Multi-grating structure-based semiconductor laser beam combination device and beam combination method |
| CN106025792A (en) * | 2016-05-04 | 2016-10-12 | 中国工程物理研究院应用电子学研究所 | Device used for improving three primary colour laser white light source spectral component through spectral synthesis |
| CN106679937A (en) * | 2017-03-02 | 2017-05-17 | 大族激光科技产业集团股份有限公司 | Test system for semiconductor laser units |
| CN110383607A (en) * | 2017-03-09 | 2019-10-25 | 三菱电机株式会社 | Wavelength coupled laser device |
| CN115128820A (en) * | 2022-08-30 | 2022-09-30 | 中国科学院长春光学精密机械与物理研究所 | Chirp reflection type volume Bragg grating feedback spectrum beam combining device and method |
-
2014
- 2014-02-17 CN CN201420068597.9U patent/CN204067850U/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105428996A (en) * | 2015-12-09 | 2016-03-23 | 中国科学院长春光学精密机械与物理研究所 | Multi-grating structure-based semiconductor laser beam combination device and beam combination method |
| CN105406353A (en) * | 2015-12-11 | 2016-03-16 | 长春理工大学 | Multiple single-tube beam-combination semiconductor lasers based on grating isosceles prism |
| CN105406353B (en) * | 2015-12-11 | 2018-06-19 | 长春理工大学 | More single tubes based on grating isosceles prism close beam semiconductor laser |
| CN106025792A (en) * | 2016-05-04 | 2016-10-12 | 中国工程物理研究院应用电子学研究所 | Device used for improving three primary colour laser white light source spectral component through spectral synthesis |
| CN106679937A (en) * | 2017-03-02 | 2017-05-17 | 大族激光科技产业集团股份有限公司 | Test system for semiconductor laser units |
| CN110383607A (en) * | 2017-03-09 | 2019-10-25 | 三菱电机株式会社 | Wavelength coupled laser device |
| CN115128820A (en) * | 2022-08-30 | 2022-09-30 | 中国科学院长春光学精密机械与物理研究所 | Chirp reflection type volume Bragg grating feedback spectrum beam combining device and method |
| CN115128820B (en) * | 2022-08-30 | 2022-11-08 | 中国科学院长春光学精密机械与物理研究所 | Chirp reflection type volume Bragg grating feedback spectrum beam combining device and method |
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