CN101369716A - High power light beam coupling semiconductor laser - Google Patents
High power light beam coupling semiconductor laser Download PDFInfo
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- CN101369716A CN101369716A CNA2008100512108A CN200810051210A CN101369716A CN 101369716 A CN101369716 A CN 101369716A CN A2008100512108 A CNA2008100512108 A CN A2008100512108A CN 200810051210 A CN200810051210 A CN 200810051210A CN 101369716 A CN101369716 A CN 101369716A
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Abstract
The invention relates to a high-power semiconductor laser device, especially a high-power light beam coupling semiconductor laser device, including two semiconductor laser devices with same wavelength and polarization state, a beam-expanding focusing device. The two semiconductor laser devices are deposited relatively on an optical axis, a right-angle polarization coupling prism with polarization membranous on its inclined surface is arranged on an optical path between the two semiconductor laser devices, a quarter wave plate is pasted on one right-angle surface of the right-angle polarization coupling prism, an emergent light beam of the laser is transmitted to the beam-expanding focusing device after reflecting by the right-angle polarization coupling prism, and the emergent light beam of the other laser is coupled to a beam to transmit after 90 DEG rotation of polarization direction by reflecting of the quarter wave plate. The paste placement of the quarter wave plate and the right-angle polarization coupling prism, and reduces device regulation difficulty and improves coupling efficiency, also improves the output power and lightness by two times without changing light beam quality.
Description
Technical field
The present invention relates to high power semiconductor lasers, particularly a kind of by the high power laser of light beam coupling to realize to the two-way semiconductor laser light resource.
Background technology
Laser with respect to other type, semiconductor laser (LD) has that volume is little, in light weight, efficient is high, the life-span is long, direct advantage such as current-modulation, therefore used widely in various fields such as industry, military affairs, nuclear energy, communications, the requirement of noise spectra of semiconductor lasers power output and brightness is also more and more higher simultaneously.By the semiconductor laser light emitting unit being integrated into one dimensional linear array (LD Bar) and piling up the two-dimensional array (LD Stack) of a plurality of LD Bar, can improve the power output of semiconductor laser effectively, but because the restriction of being dispelled the heat, two-dimensional array cannot pile up LD Bar is unconfined, can accomplish the lamination of 25 Bar in the world, continuous power output 2500w, such power still can not satisfy the needs of industry to processing such as Metal Cutting, welding.This just requires to adopt suitable light beam coupling method, with the light beam coupling of a plurality of semiconductor laser arrays to same optical path, to improve power output and brightness.Adopt the polarization coupled technology that light beam is coupled and final coupled into optical fibres output.Because semiconductor laser array is the linearly polarized light of height, the polarization coupled prism can be exported through light-beam forming unit the output of two semiconductor laser array light beam coupling again with light beam coupling to optical fiber.
Fig. 4 is a kind of polarization direction half-twist of realizing a branch of semiconductor laser wherein by half-wave plate to obtain the polarised light with the semiconductor laser array different directions, export high-power semiconductor laser with cube polarization coupled prism-coupled light beam with realization then, polarization coupled technology (H J Baker is arranged now in the world, JF Monjardin, P Kneip, D R Hall, 1.8kW diode laser system for fibre-delivery usingbrightness-enhanced diode stacks and a novel final beam-shaper[J] .SPIE Proc, 2008, Vol.6876), this device is two semiconductor lasers 21 with the identical polarization state of same wavelength as shown in Figure 4,22 one-tenth 90 ° of placements, one of them semiconductor laser 42 process half-wave plate 43 is with its polarization direction half-twist, make it vertical with another semiconductor laser 41 polarization directions, be coupled into a branch of output with cube polarization coupled prism 44 and semiconductor laser 41 then, pass through plano-convex cylindrical mirror 25 again, 26,27,29, speculum 28 and plano-concave cylindrical mirror 30,31 combination, converged on the input end face of optical fiber 32, through optical fiber 32 outputs.This structure can realize closing bundle, and shortcoming is: (1) two-laser vertically becomes 90 ° of placements, regulates complicated; (2) adopt cube polarization coupled prism, middle cemented surface makes the glue fusing in long-time high power uses, efficient is reduced; (3) because the angle of divergence of semiconductor laser own is not more directly placed the reduction of half-wave plate rotatory polarization direction efficient through collimation.(4) distance between cube polarization coupled prism and the half-wave plate is big, and coupling efficiency is low, is difficult for regulating.(5) adopt cube polarization coupled prism as coupling, cost an arm and a leg.
Summary of the invention
The purpose of this invention is to provide a kind of simple in structure, easy high power light beam coupling semiconductor laser of processing of element,, realize higher power and brightness output to overcome the scarce limit of above-mentioned present prior art.
High power light beam coupling semiconductor laser of the present invention, two semiconductor lasers, the expansion beam-focuser part that comprise the identical polarization state of same wavelength, described two semiconductor lasers are staggered relatively on same optical axis, the right angle polarization coupled prism that is coated with polarizing coating on one its inclined-plane is being set on the light path between two semiconductor lasers, on a side right angle face of this right angle polarization coupled prism, post a quarter-wave plate, be coated with highly reflecting films on the outer face of this quarter-wave plate; The outgoing beam of a laser transfers to after the reflection of the inclined-plane of this right angle polarization coupled prism revolves transmission direction to turn 90 degrees and expands the beam-focuser part, the outgoing beam of another laser by this right angle polarization coupled prism opposite side right angle face after the inclined-plane internal reflection to described quarter-wave plate, after the reflection of this quarter-wave plate of process realized 90 degree rotations of polarization direction again, inclined-plane and aforesaid folded light beam that this right angle polarization coupled prism is crossed in transmission were coupled into a branch of expansion beam-focuser part that transfers to.
Exit end at described two semiconductor lasers also is respectively equipped with the fast axis collimation mirror, to reduce the fast axle angle of divergence.
Described two semiconductor lasers are being 1/2 of semiconductor laser array spacing d perpendicular to the alternate position spike on fast axle (y axle) direction of semiconductor laser array P-n junction plane.
Thereby characteristics of the present invention be the polarization direction of adopting quarter-wave plate to make one of them semiconductor laser array light beam revolve turn 90 degrees and the polarization direction of another semiconductor laser array vertical mutually in right angle polarization coupled prism coupling export, realize the coupling of two light beams, this quarter-wave plate and right angle polarization coupled prism pasted to put to reduce device and regulate difficulty, and can improve coupling efficiency, adopt right angle polarization coupled prism to need not to consider the damage threshold of coupling surface, compact conformation, and under the condition that does not change beam quality, power output and brightness are risen to original 2 times, and, filled the luminous space between semiconductor laser array LD Bar each other because two semiconductor lasers staggered relatively are being 1/2 of semiconductor laser array spacing d perpendicular to the alternate position spike on the y direction of principal axis of semiconductor laser array P-n junction plane; Realize closing bundle by the quarter-wave plate and the polarization coupled prism that match; The final employing expands that the coupling of bundle focusing arrangement is laggard goes into optical fiber output, obtains bigger power output and brightness.
Description of drawings
Fig. 1 is a high power light beam coupling semiconductor laser structural representation of the present invention;
Fig. 2 is that two semiconductor laser array position height concern schematic diagram shown in Fig. 1;
Fig. 3 is the coupling of two laser beams, focusing schematic diagram;
Fig. 4 is prior art realizes the output high-power semiconductor laser with the light beam coupling of half-wave plate and cube polarization coupled prism a device schematic diagram.
Embodiment
The embodiment that provides below in conjunction with accompanying drawing is described in further detail the present invention.
With reference to Fig. 1, two semiconductor lasers 1 that comprise the identical polarization state of same wavelength, 1 ', expand the beam-focuser part, it is characterized in that: described two semiconductor lasers 1,1 ' is staggered relatively on same optical axis, at two semiconductor lasers 1, the right angle polarization coupled prism 4 that is coated with polarizing coating on one its inclined-plane is set on the light path between 1 ', on a side right angle face of this right angle polarization coupled prism 4, post a quarter-wave plate 5, be coated with highly reflecting films on the outer face of this quarter-wave plate 5, the outgoing beam of a laser 1 ' transfers to after the reflection of the inclined-plane of this right angle polarization coupled prism 4 revolves transmission direction to turn 90 degrees and expands the beam-focuser part, the outgoing beam of another laser 1 by this right angle polarization coupled prism 4 opposite side right angle face after the inclined-plane internal reflection to described quarter-wave plate 5, after the reflection of process quarter-wave plate 5 realized 90 degree rotations of polarization direction again, inclined-plane and aforesaid folded light beam that this right angle polarization coupled prism 4 is crossed in transmission were coupled into a branch of expansion beam-focuser part that transfers to.
Described expansion beam-focuser part is made up of the post lens 6, globe lens 7, the meniscus lens 8 that set gradually along coupling back beam Propagation direction.
Also be coated with high transmission film on described quarter-wave plate 5 and the inner face that right angle polarization coupled prism 4 pastes mutually.
Also be respectively equipped with fast axis collimation mirror 3,3 ' at described two semiconductor lasers 1,1 ' exit end, to reduce the fast axle angle of divergence.
Described fast axis collimation mirror 3,3 ' adopts post lens, attached column lens or gradual index lens.
With reference to Fig. 2, described two semiconductor lasers 1,1 ' are being 1/2 of semiconductor laser array spacing d perpendicular to the alternate position spike on fast axle (y) direction of semiconductor laser array P-n junction plane.The light beam of each laser in the two-laser all is in the luminous space of another laser, more helps focusing and obtain small light spot.
The coupled apparatus of key of the present invention is right angle coupling prism 4 and quarter-wave plate 5.Coupling prism 4 in right angle is that to be used for beam reflection with semiconductor laser 1 ' be that transmission direction is revolved and turn 90 degrees output, and semiconductor laser 1 is coupled prism 4 reflection-z directions to quarter-wave plate 5 through the right angle, right angle coupling prism and quarter-wave plate tightly stick together placement, at the high transmission film of quarter-wave plate 5 inner platings, outer face plating highly reflecting films, make semiconductor laser 1 reverberation twice of round-trip transmission in quarter-wave plate, thereby make polarisation of light direction half-twist, realized the conversion of polarization direction.That total transmissivity takes place behind right angle coupling prism is synthetic a branch of with semiconductor laser 1 ' reflection optical coupler for light beam after the deflection, focuses on laggardly to go into optical fiber and export by expanding bundle, obtains bigger power output and brightness.
For semiconductor laser, we stipulate generally to be fast axle y direction perpendicular to P-n junction plane direction that being parallel to P-n junction plane direction is the z axle for the slow axis beam direction of propagation, as shown in Figure 1 the x of two-laser
1, z
1, x
2, z
2Direction of principal axis closes x, the z direction of principal axis of the fast and slow axis direction correspondence of bundle back light beam, is the y axle perpendicular to the direction of paper.
The present invention is for through two semiconductor laser arrays 1,1 ' behind the fast axis collimation mirror 3,3 ', in the x-z plane, become 180 ° of placements, as shown in Figure 2, and make two lasers in y direction of principal axis position difference, the difference of position equals half of spacing d of LD Bar 2 in the semiconductor laser array, and the beam sizes of LD Bar behind fast axis collimation be less than d/2, and the light beam of each laser all is in the luminous space of another laser in the two-laser like this.
Beam shape before and after the light beam coupling changes as shown in Figure 3, and 11,11 ' is respectively laser 1,1 ' hot spot among the figure, and 12 for closing the hot spot behind the bundle.Can see that the light beam slow axis size of closing behind the bundle widened, we know by geometric optics knowledge, and prism is to beam expander the time, and the angle of divergence of light beam also can reduce identical multiple.The collimation of slow axis beam helped focusing on obtain little hot spot, available post lens 6, globe lens 7 and meniscus lens 8 focus on.
Claims (6)
1. high power light beam coupling semiconductor laser, two semiconductor lasers (1 that comprise the identical polarization state of same wavelength, 1 '), expand the beam-focuser part, it is characterized in that: described two semiconductor lasers (1,1 ') staggered relatively on same optical axis, at two semiconductor lasers (1, the right angle polarization coupled prism (4) that is coated with polarizing coating on one its inclined-plane is set on the light path 1 '), on a side right angle face of this right angle polarization coupled prism (4), post one with the corresponding quarter-wave plate of semiconductor laser emission wavelength (5), be coated with highly reflecting films on the outer face of this quarter-wave plate (5), the outgoing beam of a laser (1 ') transfers to after the reflection of the inclined-plane of this right angle polarization coupled prism (4) revolves transmission direction to turn 90 degrees and expands the beam-focuser part, the outgoing beam of another laser (1) by this right angle polarization coupled prism (4) opposite side right angle face after the inclined-plane internal reflection to described quarter-wave plate (5), after the reflection of passing through this quarter-wave plate (5) again realized 90 degree rotations of polarization direction, the inclined-plane that this right angle polarization coupled prism 4 is crossed in transmission was coupled into a branch of expansion beam-focuser part that transfers to aforesaid folded light beam.
2. high power light beam coupling semiconductor laser according to claim 1 is characterized in that described expansion beam-focuser part is made up of the post lens (6), globe lens (7), the meniscus lens (8) that set gradually along coupling back beam Propagation direction.
3. high power light beam coupling semiconductor laser according to claim 1 is characterized in that, also is coated with high transmission film on described quarter-wave plate (5) and the inner face that right angle polarization coupled prism (4) pastes mutually.
4. high power light beam coupling semiconductor laser according to claim 1 is characterized in that, also is respectively equipped with fast axis collimation mirror (3,3 ') at the exit end of described two semiconductor lasers (1,1 '), to reduce the fast axle angle of divergence.
5. high power light beam coupling semiconductor laser according to claim 4 is characterized in that described fast axis collimation mirror (3,3 ') adopts post lens, attached column lens or gradual index lens.
6. high power light beam coupling semiconductor laser according to claim 1, it is characterized in that described two semiconductor lasers (1,1 ') are being 1/2 of semiconductor laser array spacing d perpendicular to the alternate position spike on fast axle (y) direction of semiconductor laser array P-n junction plane.
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101833150A (en) * | 2010-05-18 | 2010-09-15 | 中国科学院长春光学精密机械与物理研究所 | Fiber coupling module of high-power semiconductor laser |
| CN101854030A (en) * | 2010-05-04 | 2010-10-06 | 长春德信光电技术有限公司 | Laser light source device of high-power semiconductor |
| CN101916964A (en) * | 2010-08-05 | 2010-12-15 | 中国兵器工业第二〇五研究所 | Light beam polarization synthesizing device of large-power semiconductor lasers |
| CN102961829A (en) * | 2012-11-22 | 2013-03-13 | 西安炬光科技有限公司 | Double-side refrigeration semiconductor laser system with collimation for medical cosmetology |
| CN102962585A (en) * | 2012-11-26 | 2013-03-13 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor laser processing machine with light-feedback-proof device |
| CN103545718A (en) * | 2013-10-29 | 2014-01-29 | 西安炬光科技有限公司 | High-power semiconductor laser device light source system for laser processing |
| US9294217B2 (en) | 2011-07-14 | 2016-03-22 | Huawei Technologies Co., Ltd. | Optical signal multiplexing method and optical multiplexer |
| CN106405744A (en) * | 2016-11-17 | 2017-02-15 | 武汉钧恒科技有限公司 | Light-splitting coupling device |
| CN113189780A (en) * | 2021-04-21 | 2021-07-30 | 吉林省长光瑞思激光技术有限公司 | Light path shaping system capable of realizing laser round and square spot change |
| CN114690327A (en) * | 2022-04-22 | 2022-07-01 | 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） | Optical fiber coupling space light path structure |
| CN115173219A (en) * | 2022-08-15 | 2022-10-11 | 北京工业大学 | High-brightness semiconductor laser module |
| CN117381212A (en) * | 2023-11-23 | 2024-01-12 | 江阴创可激光技术有限公司 | Laser processing device for emitting light of double lasers |
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| US6993059B2 (en) * | 2003-06-11 | 2006-01-31 | Coherent, Inc. | Apparatus for reducing spacing of beams delivered by stacked diode-laser bars |
| CN1972046A (en) * | 2006-11-21 | 2007-05-30 | 北京工业大学 | High-power semiconductor laser polarization coupling apparatus and its method |
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2008
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| CN101854030A (en) * | 2010-05-04 | 2010-10-06 | 长春德信光电技术有限公司 | Laser light source device of high-power semiconductor |
| CN101833150A (en) * | 2010-05-18 | 2010-09-15 | 中国科学院长春光学精密机械与物理研究所 | Fiber coupling module of high-power semiconductor laser |
| CN101916964A (en) * | 2010-08-05 | 2010-12-15 | 中国兵器工业第二〇五研究所 | Light beam polarization synthesizing device of large-power semiconductor lasers |
| US9294217B2 (en) | 2011-07-14 | 2016-03-22 | Huawei Technologies Co., Ltd. | Optical signal multiplexing method and optical multiplexer |
| CN102961829A (en) * | 2012-11-22 | 2013-03-13 | 西安炬光科技有限公司 | Double-side refrigeration semiconductor laser system with collimation for medical cosmetology |
| CN102961829B (en) * | 2012-11-22 | 2015-09-30 | 西安炬光科技有限公司 | A kind of bilateral refrigeration mode medical and beauty treatment Laser Diode System with collimation |
| CN102962585A (en) * | 2012-11-26 | 2013-03-13 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor laser processing machine with light-feedback-proof device |
| CN103545718B (en) * | 2013-10-29 | 2016-06-22 | 西安炬光科技有限公司 | For the high-power semiconductor laser light-source system laser machined |
| CN103545718A (en) * | 2013-10-29 | 2014-01-29 | 西安炬光科技有限公司 | High-power semiconductor laser device light source system for laser processing |
| CN106405744A (en) * | 2016-11-17 | 2017-02-15 | 武汉钧恒科技有限公司 | Light-splitting coupling device |
| CN113189780A (en) * | 2021-04-21 | 2021-07-30 | 吉林省长光瑞思激光技术有限公司 | Light path shaping system capable of realizing laser round and square spot change |
| CN113189780B (en) * | 2021-04-21 | 2023-03-24 | 吉林省长光瑞思激光技术有限公司 | Light path shaping system capable of realizing laser round and square spot change |
| CN114690327A (en) * | 2022-04-22 | 2022-07-01 | 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） | Optical fiber coupling space light path structure |
| CN114690327B (en) * | 2022-04-22 | 2024-05-10 | 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） | Optical fiber coupling space light path structure |
| CN115173219A (en) * | 2022-08-15 | 2022-10-11 | 北京工业大学 | High-brightness semiconductor laser module |
| CN115173219B (en) * | 2022-08-15 | 2024-04-12 | 北京工业大学 | High-brightness semiconductor laser module |
| CN117381212A (en) * | 2023-11-23 | 2024-01-12 | 江阴创可激光技术有限公司 | Laser processing device for emitting light of double lasers |
| CN117381212B (en) * | 2023-11-23 | 2024-05-10 | 江阴创可激光技术有限公司 | Laser processing device for emitting light of double lasers |
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