CN201199288Y - Light beam coupling apparatus capable of implementing high-power semiconductor laser array using rectangular prism set - Google Patents
Light beam coupling apparatus capable of implementing high-power semiconductor laser array using rectangular prism set Download PDFInfo
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- CN201199288Y CN201199288Y CNU2007200945957U CN200720094595U CN201199288Y CN 201199288 Y CN201199288 Y CN 201199288Y CN U2007200945957 U CNU2007200945957 U CN U2007200945957U CN 200720094595 U CN200720094595 U CN 200720094595U CN 201199288 Y CN201199288 Y CN 201199288Y
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Abstract
The utility model discloses a light beam coupling device by which a right angle prism set realizes a high-power semiconductor laser array, pertaining to the field of semiconductor laser coupling technology. The light beam coupling device is characterized in that the right angle prism set causes two light beams of the semiconductor laser array to deflect in different manners so as to realize the coupling of two light beams. The light beam coupling device of the utility model can be combined with polarization coupling and wavelength coupling to form the light beam coupling of a plurality of semiconductor laser arrays and fill the luminous clearance between LD Bars of the semiconductor laser array; furthermore, the right angle prisms expand light beams for collimation simultaneously, which is more beneficial to focusing to obtain small light spots; the included angle of two emergent light beams of the laser is adjusted and a vertex angle of the right angle prism matching with the included angle is designed to realize the combination of light beams, thereby being capable of realizing different collimation effects. Output power approaches the sum of each laser power.
Description
Technical field:
The utility model relates to a kind of light beam coupling device to the high-power semiconductor laser array, belongs to semiconductor laser beam coupling technique category.
Background technology:
Laser instrument with respect to other type, semiconductor laser (LD) has that volume is little, in light weight, efficient is high, the life-span is long, direct advantage such as current-modulation, therefore used widely in various fields such as industry, military affairs, nuclear energy, the requirement of noise spectra of semiconductor lasers output power and brightness is also more and more higher simultaneously.By the semiconductor laser light emitting collection of units being become one dimensional linear array (LD Bar) and piling up the two-dimensional array (LD Stack) of a plurality of LD Bar, can improve the output power of semiconductor laser effectively, but because the restriction of being dispelled the heat, two-dimensional array cannot pile up LD Bar is unconfined, can accomplish the lamination of 25 Bar in the world, continuous power output 2500w, such power still can not satisfy the needs of industry to processing such as Metal Cutting, welding.This just requires to adopt suitable light beam coupling method, with the light beam coupling of a plurality of semiconductor laser arrays to same optical path, to improve output power and brightness.
Polarization coupled technology and wavelength coupling technique (M.Traub, M.Bock, H.-D.Hoffmann, M.Bartram are arranged now in the world.Novel?high?peak?current?pulsed?diodelaser?sources?for?direct?material?process?ing[J]。SPIE Proc, 2007, Vol.6456), these two kinds of light beam coupling methods can both reach high-level efficiency, are not what repel between them, but can combine by multiple light beam coupling, more semiconductor laser array is realized closing bundle, realize higher power and brightness output.
Summary of the invention:
Content to be solved in the utility model is by a kind of new light beam coupling device, with the light beam coupling of 2-4 semiconductor laser array to same optical path, to improve output power and brightness.
The invention is characterized in that different deflection takes place the light beam that adopts the right-angle prism group to make two semiconductor laser arrays, realize the coupling of two light beams, under the condition that does not change beam quality, output power and brightness are risen to original 2 times, and filled the luminous space between semiconductor laser array LD Bar; And right-angle prism more helps focusing and obtains small light spot simultaneously to the beam expander collimation; Regulate the angle of two-laser outgoing beam, the right-angle prism drift angle that design matches realizes closing bundle, can reach different collimation effects; The use that can also combine with the coupling of polarization coupled, wavelength of this light beam coupling device realizes the more light beam coupling of multiple semiconductor laser array, obtains bigger output power and brightness.
For semiconductor laser, we stipulate that generally perpendicular to P-n junction plane direction (quick shaft direction) be the y axle, are the x axle perpendicular to P-n junction plane direction (slow axis), and direction of beam propagation is the z axle, as shown in Figure 1 the x of two-laser
1, z
1, x
2, z
2Direction of principal axis closes x, the z direction of principal axis of the fast and slow axis direction correspondence of bundle back light beam, and the y direction of principal axis is perpendicular to paper.
The present invention is for two semiconductor laser arrays 1 and 1 ' behind the process fast axis collimation mirror 3, in the x-z plane, become 2 α angles to place (as Fig. 1), and two laser instruments are in y direction of principal axis position difference, the difference of position equals half of spacing d of LD Bar 2 in the semiconductor laser array (as Fig. 2, two-laser y direction of principal axis is identical, this figure mainly shows the situation of two laser instruments on the y direction, and z
1, z
2Direction only is the direction with respect to each laser instrument, z
1, z
2Between do not have relativity, promptly two-laser does not have relativity in the position of z direction), and the beam sizes of LDBar behind fast axis collimation be less than d/2, like this in the two-laser light beam of each laser instrument all be in the luminous space of another laser instrument (as Fig. 3, z
1, z
2Between do not have relativity).Place right-angle prism group 4 and 4 ' (as Fig. 1) at the two light beams place's alternating direction that meets, the thickness of each right-angle prism equals d/2, and right-angle prism group 4 is corresponding with the light beam of semiconductor laser array 1, be in same position at the y axle, and prism group 4 ' is corresponding with semiconductor laser array 1 ', (as Fig. 3) runs into unidirectional prism with regard to the light beam that has guaranteed same laser instrument like this, makes light beam to identical direction deflection.The light beam of two laser instruments is towards the same angle [alpha] of opposite direction deflection, and such two light beams have just lumped together, and output power and brightness become original twice (as Fig. 1) in theory.Beam shape before and after the light beam coupling changes as Figure 12, and 16,16 ' is respectively the hot spot of laser instrument 1 and 1 ', and 17 is the hot spot that closes behind the bundle.By seeing among Fig. 4 that the light beam slow axis size of closing behind the bundle widened, we know by geometrical optics knowledge, and prism is to beam expander the time, and the angle of divergence of light beam also can reduce identical multiple.The collimation of slow axis beam helped focusing on obtain little hot spot, available post lens 8 and globe lens 9 focus on.
Light beam coupling device of the present invention can also combine with polarization coupled, wavelength coupling, forms the light beam coupling device of 4 semiconductor laser arrays.
First right-angle prism group light beam coupling at first is described, the situation of polarization coupled again, as Fig. 5, use two identical right-angle prism group light beam coupling modules 5 and 5 ', we know that the polarization direction of semiconductor laser approaches linear polarization, make their the output beam direction of propagation perpendicular, half of wave plate 6 is put in light beam front in right-angle prism group light beam coupling module 5 ', make the polarization direction of the optical axis of half-wave plate 6 and right-angle prism group light beam coupling module 5 ' light beam at 45, the polarization direction of right-angle prism group light beam coupling module 5 ' light beam has just rotated 90 ° like this, right-angle prism group light beam coupling module 5 and 5 ' light beam polarization direction are perpendicular, put a polarization in two light beam intersections and select element 7 (as cube polarization beam apparatus PBS), two light beams are a generation total transmissivity on the diagonal plane of polarization selection element, one full emission takes place, final two light beams lump together, last available post lens 8 and globe lens 9 focuses on and obtains small light spot, and this installs in theory that output power becomes original four times.
First right-angle prism group light beam coupling, the situation of wavelength coupling again are described, as Fig. 6, use two to have only the different right-angle prism group light beam coupling module 10 and 10 ' of wavelength, the emission wavelength of semiconductor laser array is λ in the right-angle prism group light beam coupling module 10
1, the wavelength X of right-angle prism group light beam coupling module 10 '
2Make their the output beam direction of propagation perpendicular, put a wavelength in two light beam intersections and select element 11, two light beams are a generation total transmissivity on the diagonal plane of wavelength selection element, one full emission takes place, final two light beams lump together, and last available post lens 8 and globe lens 9 focuses on and obtain small light spot, and this installs in theory that output power becomes original four times.
First polarization coupled is described, the situation of right-angle prism group light beam coupling again, identical with two through fast axis collimation semiconductor laser array 14 and 14 ', form polarization coupled module 12, the light beam of two-laser is vertical mutually in polarization coupled module 12, and be in sustained height at the y direction of principal axis, half-wave plate 6 is placed in the front of one of them laser instrument, make the polarization direction of the optical axis of half-wave plate 6 and this laser beam at 45, the polarization direction of light beam has just rotated 90 ° like this, the light beam polarization direction of two-laser is perpendicular, put a polarization in two light beam intersections and select element 7 (as cube polarization beam apparatus PBS), two light beams are a generation total transmissivity on the diagonal plane of polarization selection element, one full emission takes place, and final two light beams lump together (as Fig. 7).Use two identical polarization coupled modules 12 and 12 ' to substitute respectively the two semiconductor laser arrays 1 and 1 ' among Fig. 4, and make the light-beam position that substitutes two semiconductor laser arrays 1 among rear polarizer coupling module 12 and 12 ' output beam position and Fig. 4 and 1 ' identical, so just formed structure shown in Figure 8, obtained small light spot equally, this installs in theory that output power becomes original four times.
First wavelength coupling is described, right-angle prism group light beam coupling is λ with a wavelength again
1Be λ through semiconductor laser array and a wavelength of fast axis collimation
2Through the fast axis collimation semiconductor laser array, form wavelength coupling module 13, be λ at wavelength coupling module 13 medium wavelengths
1The light beam of laser instrument and wavelength are λ
2The light beam of laser instrument is perpendicular, and at sustained height, puts a wavelength in two light beam intersections and select element 11, two light beams to select generation total transmissivity on the diagonal plane of element at wavelength, and one full emission takes place, and final two light beams lump together (as Fig. 9).Two semiconductor laser arrays 1 among Fig. 4 and 1 ' are substituted with identical wavelength coupling module 13 and 13 ', and make the light-beam position that substitutes two semiconductor laser arrays 1 among back wavelength coupling module 13 and 13 ' output beam position and Fig. 4 and 1 ' identical, so just formed structure shown in Figure 10, obtained small light spot equally, this installs in theory that output power becomes original four times.
Description of drawings:
Fig. 1, (a) right-angle prism group light beam coupling exploded view (b) right-angle prism group light beam coupling synoptic diagram
Wherein semiconductor laser array 1, LD Bar 2, fast axis collimation mirror 3, right-angle prism group 4 and 4 ', diameter prism group light beam coupling module 5.
Fig. 2, two semiconductor laser array position height concern synoptic diagram
The light beam of each semiconductor laser array synoptic diagram in the luminous space of another semiconductor laser array light beam in Fig. 3, the two semiconductor laser arrays
Fig. 4, prism group light beam coupling, focus on the diagrammatic sketch of bowing
Wherein half-wave plate 6, polarization are selected element (PBS) 7, post lens 8, globe lens 9.
Fig. 5, first right-angle prism group light beam coupling, the synoptic diagram of polarization coupled again
The right-angle prism group light beam coupling module 5 and 5 ' that wherein structure is identical.
Fig. 6, first right-angle prism group light beam coupling, the synoptic diagram of wavelength coupling again
Identical but the right-angle prism group light beam coupling module 10 and 10 ' that emission wavelength is different of structure wherein, wavelength coupling element 11.
Fig. 7, polarization coupled module 12 synoptic diagram
Two identical semiconductor laser arrays 14 and 14 ' wherein, polarization coupled module 12.
Fig. 8, first polarization coupled, right-angle prism group light beam coupling synoptic diagram again
The polarization coupled module 12,12 ' that wherein structure is identical.
Fig. 9, wavelength coupling module 13 synoptic diagram
Wherein two structure is identical but semiconductor laser array 15 and 15 ' that emission wavelength is different.
The coupling of Figure 10, first wavelength, the synoptic diagram of right-angle prism group light beam coupling again
The wavelength coupling module 13,13 ' that wherein structure is identical.
The refraction on right-angle prism of Figure 11, light beam concerns synoptic diagram
Hot spot variation diagram before and after Figure 12, the right-angle prism group light beam coupling
The hot spot 16 and 16 ' behind the two semiconductor laser array fast axis collimations wherein, the hot spot 17 after the right-angle prism group light beam coupling.
Embodiment
The present invention is further described below in conjunction with drawings and Examples.
Embodiment one:
As Fig. 2,3,4, be the semiconductor laser array 1 and 1 ' that 980nm has 5 Bar vertical stack for two wavelength, LD Bar 2 spacing 1.8mm, angle of divergence 8mrad behind the fast axis collimation, the fast shaft size 0.6mm of single Bar makes two-laser 1 and 1 ' become 2 α=hexagonal angle to place in the x-z plane, i.e. z
1, z
2Become hexagonal angle, at y direction of principal axis laser instrument 1 than the high 0.6mm in the position of laser instrument 1 '.And concern by the refraction of light beam on right-angle prism 4 of laser instrument among Figure 11 1, we can know sin (α+θ)=n*sin θ, α+θ＜90 °, wherein n is the refractive index of right-angle prism, here get n=1.5, calculating can get vertex angle theta=35.26 ° of right-angle prism, and right-angle prism group 4,4 ' is corresponding on sustained height with LD Bar 2,2 ' array respectively, they are placed on the position that two light beams meet, and a right-angle side of 4 and 4 ' is overlapping.Make light beam on 4 and 4 ' inclined-plane, reflect the back perpendicular to this right-angle side outgoing.Reconcile the position of two-laser on the x-z coordinate plane, make behind two refractions of optical beam at same optical path.By obtaining light beam among Figure 11 through wide variety relation before and after the right-angle prism, (θ+α)=1.63, the slow axis angle of divergence reduces by 1.63 times simultaneously than η=cos θ/cos to draw its beam expander.Increase α angle and right-angle prism material refractive index n and can further improve the expansion beam ratio, reduce the angle of divergence.Last available post lens 8 and globe lens 9 focus on and can obtain small light spot, and this device its output power in theory is 2 semiconductor laser power sums.
Embodiment two:
Embodiment one center pillar lens 8 and globe lens 9 are focused on preceding part as a right-angle prism light beam coupling module 5, adopt two right-angle prism light beam coupling modules 5, with 5 ', make them be in sustained height in the y direction, in the x-z plane, vertically place, on the position that two light beams intersect, place cube polarizing prism (PBS) 7, known right-angle prism light beam coupling module 5 and 5 ' light beam are the p polarized light with respect to cube polarizing prism (PBS) 7, half of wave plate 6 is placed in the normal beam direction of propagation between right-angle prism light beam coupling module 5 ' and 7, the rotation half-wave plate makes its optical axis and light beam polarization direction at 45, the polarization direction of right-angle prism light beam coupling module 5 ' light beam has just rotated 90 ° like this, becomes the s polarized light.Total transmissivity takes place in the P polarized light on 6 diagonal plane, s polarized light generation total reflection, reconcile the position of two-laser, two light beams are lumped together, realize the light beam coupling of 4 semiconductor laser arrays, last available last available post lens 8 and globe lens 9 focus on and can obtain small light spot, and this device its output power in theory is 4 semiconductor laser power sums, as Fig. 5.
Embodiment three:
Embodiment one center pillar lens 8 and globe lens 9 are focused on preceding part as a diameter prismatic light beam coupling module 10, adopt diameter prismatic light beam coupling module 10 and 10 ', make them be in sustained height in the y direction, in the x-z plane, vertically place, the emission wavelength of known diameter prismatic light beam coupling module 10 is 808nm, 10 ' wavelength 980nm, on the position that two light beams intersect, place wavelength and select element (BSC) 11, total transmissivity takes place in the light beam of 808nm on 11 diagonal plane, the light beam generation total reflection of 980nm, the position of reconciling two light beams lumps together them, realize the light beam coupling of 4 semiconductor laser arrays, last available post lens 8 and globe lens 9 focus on and can obtain small light spot, and this device its output power in theory is 4 semiconductor laser power sums, as Fig. 6.
Embodiment four:
The semiconductor laser array 14 and 14 ' that 5 Bar vertical stack are arranged with two 980nm through fast axis collimation, form polarization coupled module 12, LD Bar 2 spacing 1.8mm in each laser instrument, angle of divergence 8mrad behind the fast axis collimation, the fast shaft size 0.6mm of single Bar, the light beam of two-laser is vertical mutually in polarization coupled module 12, and be in sustained height at the y direction of principal axis, place cube polarizing prism (PBS) 7 in two semiconductor laser arrays 1 and 1 ' light beam intersection, the relative PBS in the polarization direction of known 980nm semiconductor laser array is the P polarization, between semiconductor laser array 14 ' and cube polarizing prism (PBS) 7, place half-wave plate 6 perpendicular to direction of beam propagation, make the polarization direction of the optical axis of half-wave plate 6 and this laser beam at 45, the polarization direction of light beam has just rotated 90 ° like this, the light beam polarization direction of two-laser is perpendicular, total transmissivity takes place in the light beam of laser instrument 14 on the diagonal plane of polarization selection element, the light beam generation total reflection of semiconductor laser array 14 ', final two light beams lump together (as Fig. 7).Use two identical polarization coupled modules 12 and 12 ' to substitute respectively the two semiconductor laser arrays 1 and 1 ' among Fig. 4, and make the light-beam position that substitutes two semiconductor laser arrays 1 among rear polarizer coupling module 12 and 12 ' output beam position and Fig. 4 and 1 ' identical, so just formed structure shown in Figure 8, obtained small light spot equally, this device its output power in theory is 4 semiconductor laser power sums.
Embodiment five:
With a 980nm through fast axis collimation the semiconductor laser array 15 of 5 Bar vertical stack and the semiconductor laser array 15 ' that 808nm through fast axis collimation has 5 Bar vertical stack are arranged, form wavelength coupling module 13, LD Bar 2 spacing 1.8mm in each laser instrument, angle of divergence 8mrad behind the fast axis collimation, the fast shaft size 0.6mm of single Bar, the light beam of two-laser is vertical mutually in wavelength coupling module 12, and be in sustained height at the y direction of principal axis, place wavelength selector spare 11 at semiconductor laser array 15 and 15 ' light beam intersection, total transmissivity takes place in the light beam of semiconductor laser array 15 on the diagonal plane of wavelength selection element, full emission takes place in the light beam of semiconductor laser array 15 ', and final two light beams lump together (as Fig. 9).Use two identical wavelength coupling modules 13 and 13 ' to substitute respectively the two semiconductor laser arrays 1 and 1 ' among Fig. 4, and make the light-beam position that substitutes two semiconductor laser arrays 1 among back wavelength coupling module 13 and 13 ' output beam position and Fig. 4 and 1 ' identical, so just formed structure shown in Figure 10, obtained small light spot equally, this device its output power in theory is 4 semiconductor laser power sums.
Example one is that light beam coupling, the example two, three, four, five of two semiconductor laser arrays is light beam coupling of four semiconductor laser arrays, and this is which kind of example is the output power that obtains as required select.Theoretical and experimental results show that polarization coupled and wavelength coupling can both reach high-level efficiency, example two, three are better than four on method, five, because though semiconductor laser array still has a small divergence angle very through fast axis collimation, right-angle prism group light beam coupling need be interted the light beam of two semiconductor lasers and is coupled, the beam propagation distance is little, the beam sizes of dispersing helps reaching high-level efficiency for a short time, avoid the polarization of front or BEAM SQUINT that wavelength coupler spare scale error causes to cause that right-angle prism group light beam coupling efficient reduces simultaneously, so carry out the example two of right-angle prism group light beam coupling earlier, the 3rd, reasonable scheme.
If light beam coupling device of the present utility model and polarization coupled, wavelength coupling are used simultaneously, can form the light beam coupling device of 8 semiconductor laser arrays, its output power is 8 semiconductor laser power sums in theory.
Below only be most preferred embodiment of the present invention, all equivalences of being carried out with claim of the present invention change and revise, and all should belong to the scope that the present invention is contained.
Claims (5)
1. the right-angle prism group realizes the light beam coupling device of high-power semiconductor laser array, it is characterized in that adopting two light beam coupling of right-angle prism group with two semiconductor laser arrays:
Through two semiconductor laser arrays (1) and (1 ') behind the fast axis collimation mirror (3), in the x-z plane, become 2 α angles to place, and two laser instruments are in y direction of principal axis position difference, the difference of position equals half of spacing d of LD Bar (2) in the semiconductor laser array, and the beam sizes of LD Bar behind fast axis collimation is less than d/2, the light beam of each laser instrument all is in the luminous space of another laser instrument in the two-laser like this, place right-angle prism group (4) and (4 ') at the two light beams place's alternating direction that meets, the thickness of each right-angle prism equals d/2, and the optically-coupled of right-angle prism group (4) and semiconductor laser array (1);
Uses that can also combine with the coupling of polarization coupled, wavelength of this light beam coupling device is divided into the following four kinds of structure types of composition:
Elder generation's right-angle prism group light beam coupling, polarization coupled again,
Elder generation's right-angle prism group light beam coupling, wavelength coupling again,
Elder generation's polarization coupled, right-angle prism group light beam coupling again,
Elder generation's wavelength coupling, right-angle prism group light beam coupling again.
2. realize the light beam coupling device of high-power semiconductor laser array according to the described right-angle prism group of claim 1, it is characterized in that first right-angle prism group light beam coupling, polarization coupled again:
Use two identical right-angle prism group light beam coupling modules (5) and right-angle prism group light beam coupling module (5 '), the output beam direction of propagation is perpendicular, put half of wave plate (6) in the light beam front of right-angle prism group light beam coupling module (5 '), make the polarization direction of the optical axis of half-wave plate (6) and right-angle prism group light beam coupling module (5 ') light beam at 45, the polarization direction of right-angle prism group light beam coupling module (5 ') light beam has just rotated 90 ° like this, right-angle prism group light beam coupling module (5) is perpendicular with the light beam polarization direction of right-angle prism group light beam coupling module (5 '), put a polarization in two light beam intersections and select element (7), use post lens (8) and globe lens (9) to focus at last and obtain small light spot.
3. realize the light beam coupling device of high-power semiconductor laser array according to the described right-angle prism group of claim 1, it is characterized in that first right-angle prism group light beam coupling, wavelength coupling again:
Use two to have only wavelength different right-angle prism group light beam coupling module (10) and (10 '), the emission wavelength of semiconductor laser array is λ in the right-angle prism group light beam coupling module (10)
1, the wavelength X of right-angle prism group light beam coupling module (10 ')
2, their the output beam direction of propagation is perpendicular, puts a wavelength in two light beam intersections and selects element (11), is focused on by post lens (8) and globe lens (9) and obtains small light spot.
4. realize the light beam coupling device of high-power semiconductor laser array according to the described right-angle prism group of claim 1, it is characterized in that first polarization coupled, right-angle prism group light beam coupling again:
Identical with two through fast axis collimation semiconductor laser array (14) and (14 '), form polarization coupled module (12), the light beam of two-laser is vertical mutually in polarization coupled module (12), and be in sustained height at the y direction of principal axis, half-wave plate (6) is placed in the front of one of them laser instrument, make the polarization direction of the optical axis of half-wave plate (6) and this laser beam at 45, the polarization direction of light beam has just rotated 90 ° like this, the light beam polarization direction of two-laser is perpendicular, put a polarization in two light beam intersections and select element (7), final two light beams lump together, two semiconductor laser arrays (1) use two identical polarization coupled modules (12) and (12 ') to substitute respectively with (1 '), and make the light-beam position of the output beam position that substitutes rear polarizer coupling module (12) and (12 ') and two laser arrays (1) and (1 ') identical, obtained small light spot equally.
5. realize the light beam coupling device of high-power half leaded light array according to the described semiconductor right-angle prism of claim 1 group, it is characterized in that first wavelength coupling, right-angle prism group light beam coupling again:
With a wavelength is λ
1Be λ through semiconductor laser array and a wavelength of fast axis collimation
2Through the fast axis collimation semiconductor laser array, form wavelength coupling module (13), be λ at wavelength coupling module (13) medium wavelength
1The light beam of laser instrument and wavelength are λ
2The light beam of laser instrument is perpendicular, and at sustained height, put a wavelength in two light beam intersections and select element (11), two semiconductor laser arrays (1) and (1 ') were substituted with identical wavelength coupling module (13) and (13 '), and make the light-beam position of the output beam position that substitutes back wavelength coupling module (13) and (13 ') and two semiconductor laser arrays (1) and (1 ') identical, form that first wavelength is coupled, the structure of right-angle prism group light beam coupling again.
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Owner name: OPTOELECTRONIC INDUSTRY INCUBATOR CO., LTD., JILIN Free format text: FORMER OWNER: CHANGCHUN INSTITUTE OF OPTICS, FINE MECHANICS AND PHYSICS, CAS Effective date: 20091106 |
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Effective date of registration: 20091106 Address after: No. 77, Yingkou Road, Changchun economic and Technological Development Zone, Jilin 130033, China Patentee after: Jilin Photo-electron Industry Incubator Co., Ltd. Address before: No. 16 southeast Lake Road, Jilin, Changchun Province: 130012 Patentee before: Changchun Inst. of Optics and Fine Mechanics and Physics, Chinese Academy of Sci |
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