CN102012567A - Laser beam coupling output device for high-power semiconductor - Google Patents
Laser beam coupling output device for high-power semiconductor Download PDFInfo
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- CN102012567A CN102012567A CN 201010597864 CN201010597864A CN102012567A CN 102012567 A CN102012567 A CN 102012567A CN 201010597864 CN201010597864 CN 201010597864 CN 201010597864 A CN201010597864 A CN 201010597864A CN 102012567 A CN102012567 A CN 102012567A
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Abstract
The invention relates to a multi-beam coupling output device for a high-power semiconductor laser system, belonging to the technical field of laser. With respect to the device, light with two wavelengths, which is respectively emitted by a first semiconductor laser array and a second semiconductor laser array, is subject to wavelength coupling by using a wavelength coupler, thus obtaining a beam with two wavelengths; light with two wavelengths, which is respectively emitted by a third semiconductor laser array and a fourth semiconductor laser array, is subject to wavelength coupling by using the wavelength coupler, thus obtaining a beam comprising two wavelengths; and the two beams respectively with two wavelengths are combined by a polarization coupler to finally obtain a combined beam, and the combined beam is output. The coupling output device has more reasonable structure, smaller volume, good controllability and lower cost, and is easy to process.
Description
Technical field
The present invention relates to the multiple beam output coupler in a kind of high-power semiconductor laser system, the method that this device employing wavelength coupling combines with polarization coupled is synthetic a branch of with the light beam of two kinds of wavelength that four groups of semiconductor laser arrays send, and belongs to laser optoelectronic and application thereof.
Background technology
The multikilowatt Application of High Power Semiconductor Laser that advantages such as high power semiconductor lasers is little because of its volume, photoelectric conversion rate is high, the life-span is long are widely used in field, especially high light beam qualities such as materials processing, military affairs, medical treatment, high brightness is more extensive.
At present, in the world in order to realize large-power semiconductor laser output, the normal method that adopts have living space multichannel coupling process, polarization coupled method and wavelength coupling process.For example German JENOPTIK Laserdiode GmbH company utilizes catoptron, wavelength coupler and polarizing coupler to realize the light beam coupling output of two kinds of wavelength, four semiconductor laser arrays.Though this kind method can access high-power laser output, because the light path difference that does not add light-beam forming unit and finally pass through the two-way light of polarizing coupler makes the beam quality of output beam be under some influence.
The patent No. is for providing a kind of light beam set composite in 200910076298.3 the patent of invention, though solved the problem in the method that JENOPTIK Laserdiode GmbH adopted, but because eight semiconductor laser arrays in its device are arranged by annular (square), cause the mechanical processing difficulty of the parts of laser instrument to increase, machining precision reduces, correspondingly increased the cost of Optical Maser System, made laser instrument debug error simultaneously and increase.
Summary of the invention
The objective of the invention is to solve the above-mentioned defective of existing output coupler, more reasonably laser beam coupling output system of a kind of structure is provided.
The present invention at first utilizes wavelength coupler to carry out the wavelength coupling light of two kinds of wavelength of four bundles that four semiconductor laser arrays send, and obtains the light that two bundles comprise two kinds of wavelength; This two-beam utilizes the output that is coupled of a polarizing coupler again.According to semiconductor laser array output polarization state of light type, two kinds of technical schemes have been designed:, be suitable for first kind of technical scheme of the present invention when four semiconductor laser arrays are all exported P light beam or S light beam; When first and second semiconductor laser array output P light beam, when third and fourth semiconductor laser array is exported the S light beam simultaneously, perhaps when first and second semiconductor laser array output S light beam, when third and fourth semiconductor laser array is exported the P light beam simultaneously, be suitable for second kind of technical scheme of the present invention.
First kind of technical scheme: first semiconductor laser array, second semiconductor laser array, the 3rd semiconductor laser array, the 4th semiconductor laser array, first wavelength coupler, second wavelength coupler, first right-angle prism, second right-angle prism, the 3rd right-angle prism are set, / 2nd wave plates, polarizing coupler and light-beam forming unit.Wherein, first semiconductor laser array and the 4th semiconductor laser array output light wavelength is λ
1, second semiconductor laser array and the 3rd semiconductor laser array output light wavelength are λ
2
The light that the light that first semiconductor laser array sends sends with second semiconductor laser array after through first right-angle prism reflection deviation carries out the wavelength coupling by first wavelength coupler, and to obtain comprising wavelength be λ
1And λ
2Light beam I; Simultaneously the light that sends with the 3rd semiconductor laser array after through second right-angle prism reflection deviation of the light that sends of the 4th semiconductor laser array carries out the wavelength coupling by second wavelength coupler to obtain comprising wavelength is λ
1And λ
2Light beam II; Light beam I is through 90 ° of the 3rd right-angle prism direction of propagation deviations, and vertically through one 1/2nd wave plate polarization direction half-twist, two-beam together enters polarizing coupler and closes bundle light beam II then, and exporting a branch of wavelength that comprises is λ
1, λ
2Light beam.
Light-beam forming unit A is the device that a kind of light that semiconductor laser array is sent carries out homogenising, the light beam that each semiconductor laser array sends must carry out beam shaping with light-beam forming unit A, the shaping process can be before wavelength coupling, also can be after the wavelength coupling.
A kind of high-power semiconductor laser beam output coupler is provided with first right-angle prism 5, second right-angle prism 6, the 3rd right-angle prism 7 of surface coating; Wherein the film that plated of first right-angle prism 5, the right angle face of second right-angle prism 6 is λ to wavelength
1Laser have high-transmission rate, the film that the inclined-plane plated is λ to wavelength
1Laser have high reflectance, the film that the right angle face of the 3rd right-angle prism 7 is plated is λ to wavelength
1, λ
2Laser have high-transmission rate, the film that the inclined-plane plated is λ to wavelength
1, λ
2Laser have high reflectance.
Set polarizing coupler 10 is a kind of Glan-Taylor prism, diaphragm type polarizer, the film with polarization or natural birefringence crystal in a kind of high-power semiconductor laser beam output coupler.
/ 2nd set wave plates 11 of a kind of high-power semiconductor laser beam output coupler also can be positioned at the front of the 3rd right-angle prism 7 or the back of the 3rd right-angle prism 7 along the normal beam direction of propagation.
Set 1/2nd wave plates 11 in a kind of high-power semiconductor laser beam output coupler, it can change the polarization direction of linearly polarized light, makes its polarization direction half-twist, produces and the original perpendicular linearly polarized light in polarization direction.
Second kind of technical scheme: first semiconductor laser array, second semiconductor laser array that output S polarized light is set, the 3rd semiconductor laser array, the 4th semiconductor laser array of output P polarized light, first wavelength coupler, second wavelength coupler, first right-angle prism, second right-angle prism, the 3rd right-angle prism, polarizing coupler and light-beam forming unit.Wherein, first semiconductor laser array and the 4th semiconductor laser array output light wavelength is λ
1, second semiconductor laser array and the 3rd semiconductor laser array output light wavelength are λ
2
The light that the light that first semiconductor laser array sends sends with second semiconductor laser array after through first right-angle prism reflection deviation carries out the wavelength coupling by first wavelength coupler, and to obtain comprising wavelength be λ
1And λ
2Light beam I; Simultaneously the light that sends with the 3rd semiconductor laser array after through second right-angle prism reflection deviation of the light that sends of the 4th semiconductor laser array carries out the wavelength coupling by second wavelength coupler to obtain comprising wavelength is λ
1And λ
2Light beam II; Light beam I closes bundle through together entering polarizing coupler with light beam II behind 90 ° of the 3rd right-angle prism direction of propagation deviations, and exporting a branch of wavelength that comprises is λ
1, λ
2Light beam.
Light-beam forming unit A is the device that a kind of light that semiconductor laser array is sent carries out homogenising, the light beam that each semiconductor laser array sends must carry out beam shaping with light-beam forming unit A, the shaping process can be before wavelength coupling, also can be after the wavelength coupling.
A kind of high-power semiconductor laser beam output coupler is provided with first right-angle prism 5, second right-angle prism 6, the 3rd right-angle prism 7 of surface coating; Wherein the film that plated of first right-angle prism 5, the right angle face of second right-angle prism 6 is λ to wavelength
1Laser have high-transmission rate, the film that the inclined-plane plated is λ to wavelength
1Laser have high reflectance, the film that the right angle face of the 3rd right-angle prism 7 is plated is λ to wavelength
1, λ
2Laser have high-transmission rate, the film that the inclined-plane plated is λ to wavelength
1, λ
2Laser have high reflectance.
Set polarizing coupler 10 is a kind of Glan-Taylor prism, diaphragm type polarizer, the film with polarization or natural birefringence crystal in a kind of high-power semiconductor laser beam output coupler.
Second kind of technical scheme can also adopt first semiconductor laser array, second semiconductor laser array of output P polarized light, the 3rd semiconductor laser array, the 4th semiconductor laser array of output S polarized light.
More than in two kinds of technical schemes the number of semiconductor laser array can select according to actual needs, enter the light beam that two-beam before the polarizing coupler contains n wavelength: λ
1, λ
2, λ
3... λ
n, promptly n semiconductor laser array, n=2,3 are each side arranged at polarizing coupler ...
The device that the present invention is designed makes each semiconductor laser array linear array, and structure is more reasonable, has reduced mechanical processing difficulty, has improved and debug precision, can solve the defective that the method described in the background technology exists; The device favorable expandability that the present invention is designed increases or reduces the quantity of semiconductor laser array of the left and right sides two-way of this device according to the real work needs; Reduce the volume and weight of system effectively, reduced cost.
Description of drawings
The light path principle figure of first kind of embodiment of Fig. 1 the present invention;
The light path principle figure of second kind of embodiment of Fig. 2 the present invention;
The light path principle figure of the third embodiment of Fig. 3 the present invention;
The light path principle figure of the 4th kind of embodiment of Fig. 4 the present invention;
The light path principle figure of the 5th kind of embodiment of Fig. 5 the present invention;
Among the figure: 1, first semiconductor laser array, 2, second semiconductor laser array, 3, the 3rd semiconductor laser array, 4, the 4th semiconductor laser array, 5, first right-angle prism, 6, second right-angle prism, 7, the 3rd right-angle prism, 8, first wavelength coupler, 9, second wavelength coupler, 10, polarizing coupler, 11, / 2nd wave plates, 12, the 5th semiconductor laser array, 13, the 6th semiconductor laser array, 14, the 7th semiconductor laser array, 15, the 8th semiconductor laser array, 16, the three-wavelength coupling mechanism, 17, the 4th wavelength coupler, 18, the 5th wavelength coupler, 19, the 6th wavelength coupler, A, light-beam forming unit.
Embodiment:
Embodiment 1:
As shown in Figure 1, a kind of high-power semiconductor laser beam output coupler is made up of first semiconductor laser array 1, second semiconductor laser array 2, the 3rd semiconductor laser array 3, the 4th semiconductor laser array 4, first right-angle prism 5, second right-angle prism 6, the 3rd right-angle prism 7, first wavelength coupler 8, second wavelength coupler 9, polarizing coupler 10,1/2nd wave plates 11 and four apparatus for shaping A.Four apparatus for shaping A lay respectively at after four semiconductor laser arrays, and 1/2nd wave plates 11 are placed between second wavelength coupler 9 and the polarizing coupler 10 perpendicular to the light path direction of propagation.First right-angle prism 5, second right-angle prism 6, the 3rd right-angle prism 7 surface coatings, first wavelength coupler 8, second wavelength coupler 9 are a kind of beam splitters, as prism, grating, interferometer etc.Polarizing coupler 10 is a kind of Glan-Taylor prism, diaphragm type polarizer, the film with polarization or natural birefringence crystal.
Four semiconductor laser arrays in the present embodiment are all exported P polarized light or S polarized light, and the light of four semiconductor laser array outputs at first carries out shaping by apparatus for shaping A.The light that the light that first semiconductor laser array 1 sends sends with second semiconductor laser array 2 after through first right-angle prism 5 reflection deviations carries out the wavelength coupling by first wavelength coupler 8, and to obtain comprising wavelength be λ
1And λ
2Light beam I; Simultaneously the light that sends with the 3rd semiconductor laser array 3 after through second right-angle prism, 6 reflection deviations of the light that sends of the 4th semiconductor laser array 4 carries out the wavelength coupling by second wavelength coupler 9 to obtain comprising wavelength is λ
1And λ
2Light beam II.Through after one 1/2nd wave plate, the 11 polarization direction half-twists, two-beam together enters polarizing coupler 10 and closes bundle light beam I through 90 ° of the 3rd right-angle prism 7 direction of propagation deviations, light beam II, and exporting a branch of wavelength that comprises is λ
1, λ
2Light beam.
/ 2nd wave plates 11 can also be placed between first wavelength coupler 8 and the 3rd right-angle prism 7 perpendicular to direction of beam propagation, perhaps are placed between the 3rd right-angle prism 7 and the polarizing coupler 10 the effect equivalence perpendicular to direction of beam propagation.
Embodiment 2:
As shown in Figure 2, embodiment 2 only is that with the difference of embodiment 1 light that semiconductor laser array sends among the embodiment 2 carries out the wavelength coupling earlier, and then carries out beam shaping.I.e. cancellation is positioned at 4 light-beam forming units behind the semiconductor laser array, only places two light-beam forming units after first wavelength coupler 8 and after second wavelength coupler 9.
Embodiment 3:
As shown in Figure 3, a kind of high-power semiconductor laser beam output coupler is made up of first semiconductor laser array 1, second semiconductor laser array 2, the 3rd semiconductor laser array 3, the 4th semiconductor laser array 4, first right-angle prism 5, second right-angle prism 6, the 3rd right-angle prism 7, first wavelength coupler 8, second wavelength coupler 9, polarizing coupler 10 and four apparatus for shaping A.Four apparatus for shaping A lay respectively at after four semiconductor laser arrays.First right-angle prism 5, second right-angle prism 6, the 3rd right-angle prism 7 surface coatings, first wavelength coupler 8, second wavelength coupler 9 are a kind of beam splitters, as prism, grating, interferometer etc.Polarizing coupler 10 is a kind of Glan-Taylor prism, diaphragm type polarizer, the film with polarization or natural birefringence crystal.
First semiconductor laser array 1, second semiconductor laser array, 2 output P polarized lights in the present embodiment, the 3rd semiconductor laser array 3, the 4th semiconductor laser array 4 output S polarized lights.The light of four semiconductor laser array outputs at first carries out shaping by apparatus for shaping A.The light that the light that first semiconductor laser array 1 sends sends with second semiconductor laser array 2 after through first right-angle prism 5 reflection deviations carries out the wavelength coupling by first wavelength coupler 8, and to obtain comprising wavelength be λ
1And λ
2Light beam I; Simultaneously the light that sends with the 3rd semiconductor laser array 3 after through second right-angle prism, 6 reflection deviations of the light that sends of the 4th semiconductor laser array 4 carries out the wavelength coupling by second wavelength coupler 9 to obtain comprising wavelength is λ
1And λ
2Light beam II.Light beam I together enters polarizing coupler 10 with light beam II afterwards for 90 ° through the 3rd right-angle prism 7 direction of propagation deviations and closes bundle, and exporting a branch of wavelength that comprises is λ
1, λ
2Light beam.
First semiconductor laser array 1, second semiconductor laser array, 2 output S polarization state lights, the 3rd semiconductor laser array 3, the 4th semiconductor laser array 4 output P polarization state lights, effect equivalence.
Embodiment 4:
As shown in Figure 4, embodiment 4 only is that with the difference of embodiment 3 light that semiconductor laser array sends among the embodiment 4 carries out the wavelength coupling earlier, and then carries out beam shaping.I.e. cancellation is positioned at 4 light-beam forming units behind the semiconductor laser array, only places two light-beam forming units after first wavelength coupler 8 and after second wavelength coupler 9.
Embodiment 5:
As shown in Figure 5: a kind of high-power semiconductor laser beam output coupler is by first semiconductor laser array 1, second semiconductor laser array 2, the 3rd semiconductor laser array 3, the 4th semiconductor laser array 4, first right-angle prism 5, second right-angle prism 6, the 3rd right-angle prism 7, first wavelength coupler 8, second wavelength coupler 9, polarizing coupler 10, / 2nd wave plates 11, the 5th semiconductor laser array 12, the 6th semiconductor laser array 13, the 7th semiconductor laser array 14, the 8th semiconductor laser array 15, three-wavelength coupling mechanism 16, the 4th wavelength coupler 17, the 5th wavelength coupler 18, the 6th wavelength coupler 19, form with eight apparatus for shaping A.Eight apparatus for shaping A lay respectively at after eight semiconductor laser arrays, and 1/2nd wave plates 11 are placed between the 4th wavelength coupler 17 and the 3rd right-angle prism 7 perpendicular to direction of beam propagation.First right-angle prism 5, second right-angle prism 6, the 3rd right-angle prism 7 surface coatings, first wavelength coupler 8, second wavelength coupler 9, three-wavelength coupling mechanism 16, the 4th wavelength coupler 17, the 5th wavelength coupler 18, the 6th wavelength coupler 19 are a kind of beam splitters, as prism, grating, interferometer etc.Polarizing coupler 10 is a kind of Glan-Taylor prism, diaphragm type polarizer, the film with polarization or natural birefringence crystal.
Eight semiconductor laser arrays in the present embodiment are all exported P polarized light or S polarized light, and wherein the optical maser wavelength of first semiconductor laser array 1 and 4 outputs of the 4th semiconductor laser array is λ
1, the optical maser wavelength of second semiconductor laser array 2 and 3 outputs of the 3rd semiconductor laser array is λ
2, the optical maser wavelength of the 5th semiconductor laser array 12 and 15 outputs of the 8th semiconductor laser array is λ
3, the optical maser wavelength of the 6th semiconductor laser array 13 and 14 outputs of the 7th semiconductor laser array is λ
4And the light of eight semiconductor laser array outputs at first carries out shaping by apparatus for shaping A.First wavelength coupler 8 and second wavelength 9 devices that are coupled are λ to wavelength
1Laser have high-transmission rate, be λ wavelength
2Laser have high reflectance, three- wavelength coupling mechanism 16 and 19 pairs of wavelength of the 6th wavelength coupler are λ
1And λ
2Laser have high-transmission rate, be λ wavelength
3Laser have high reflectance, the 4th wavelength coupler 17 and 18 pairs of wavelength of the 5th wavelength coupler are λ
1, λ
2, λ
3Laser have high-transmission rate, be λ wavelength
4Laser have high reflectance.
The light that the light that first semiconductor laser array 1 sends sends with second semiconductor laser array 2 after through first right-angle prism 5 reflection deviations carries out the wavelength coupling by first wavelength coupler 8, and to obtain comprising wavelength be λ
1And λ
2Light beam, the light that this light beam sends with the 5th semiconductor laser array 12 again carries out the wavelength coupling by three-wavelength coupling mechanism 16, and to obtain comprising wavelength be λ
1, λ
2, λ
3Light beam, the light that this light beam sends with the 6th semiconductor laser array 13 again carries out the wavelength coupling by the 4th wavelength coupler 17, and to obtain comprising wavelength be λ
1, λ
2, λ
3, λ
4Light beam I; Simultaneously the light that sends with the 3rd semiconductor laser array 3 after through second right-angle prism, 6 reflection deviations of the light that sends of the 4th semiconductor laser array 4 carries out the wavelength coupling by second wavelength coupler 9 to obtain comprising wavelength is λ
1And λ
2Light beam, the light that this light beam sends with the 8th semiconductor laser array 15 again carries out the wavelength coupling by the 6th wavelength coupler 19, and to obtain comprising wavelength be λ
1, λ
2, λ
3Light beam, the light that this light beam sends with the 7th semiconductor laser array 14 again carries out the wavelength coupling by the 5th wavelength coupler 18, and to obtain comprising wavelength be λ
1, λ
2, λ
3, λ
4Light beam II.Light beam I arrives the 3rd right-angle prism 7 through after one 1/2nd wave plate, the 11 polarization direction half-twists.Light beam I together enters polarizing coupler 10 with light beam II and closes bundle through 90 ° of direction of propagation deviations after the 3rd right-angle prism 7, and exporting a branch of wavelength that comprises is λ
1, λ
2, λ
3, λ
4Light beam./ 2nd wave plates 11 are placed between the 4th wavelength coupler 17 and the 3rd right-angle prism 7 perpendicular to direction of beam propagation among Fig. 5./ 2nd wave plates 11 can also be placed between the 3rd right-angle prism 7 and the polarizing coupler 10 perpendicular to optical path direction, perhaps are placed between the 5th wavelength coupler 18 and the polarizing coupler 10 the effect equivalence perpendicular to direction of beam propagation.
Claims (10)
1. a high-power semiconductor laser beam output coupler is characterized in that: be provided with first semiconductor laser array (1), second semiconductor laser array (2), the 3rd semiconductor laser array (3), the 4th semiconductor laser array (4), first right-angle prism (5), second right-angle prism (6), the 3rd right-angle prism (7), first wavelength coupler (8), second wavelength coupler (9), polarizing coupler (10), light-beam forming unit (A) and 1/2nd wave plates (11); Described four semiconductor laser arrays are all exported P polarized light or S polarized light, and wherein the wavelength of first semiconductor laser array (1) and the 4th semiconductor laser array (4) is λ
1, the wavelength of second semiconductor laser array (2) and the 3rd semiconductor laser array (3) is λ
2
The light that the light that first semiconductor laser array (1) sends sends with second semiconductor laser array (2) after through first right-angle prism (5) reflection deviation carries out wavelength by first wavelength coupler (8) and is coupled that to obtain comprising wavelength be λ
1And λ
2Light beam (I); Simultaneously the light that sends with the 3rd semiconductor laser array (3) after through second right-angle prism (6) reflection deviation of the light that sends of the 4th semiconductor laser array (4) carries out wavelength by second wavelength coupler (9) and is coupled that to obtain comprising wavelength be λ
1And λ
2Light beam (II); Light beam (I) is through 90 ° of the 3rd right-angle prism (7) direction of propagation deviations, light beam II is vertically through one 1/2nd wave plate (11) polarization direction half-twist, light beam (I) and light beam (II) together enter polarizing coupler (10) and close bundle, and exporting a branch of wavelength that comprises is λ
1, λ
2Light beam;
The light-beam forming unit (A) that is provided with can be before the wavelength coupling, also can be after the wavelength coupling.
2. a kind of high-power semiconductor laser beam output coupler according to claim 1 is characterized in that: a kind of high-power semiconductor laser beam output coupler is provided with first right-angle prism (5), second right-angle prism (6), the 3rd right-angle prism (7) of surface coating; Wherein the film that plated of first right-angle prism (5), the right angle face of second right-angle prism (6) is λ to wavelength
1Laser have high-transmission rate, the film that the inclined-plane plated is λ to wavelength
1Laser have high reflectance, the film that the right angle face of the 3rd right-angle prism (7) is plated is λ to wavelength
1, λ
2Laser have high-transmission rate, the film that the inclined-plane plated is λ to wavelength
1, λ
2Laser have high reflectance.
3. a kind of high-power semiconductor laser beam output coupler according to claim 1 is characterized in that: set first wavelength coupler (8), second wavelength coupler (9) are a kind of beam splitters; First wavelength coupler (8) is λ with second wavelength coupler (9) to wavelength
1Laser have high-transmission rate, be λ wavelength
2Laser have high reflectance.
4. a kind of high-power semiconductor laser beam output coupler according to claim 1 is characterized in that: set polarizing coupler (10) is a kind of Glan-Taylor prism, diaphragm type polarizer, the film with polarization or natural birefringence crystal.
5. a kind of high-power semiconductor laser beam output coupler according to claim 1 is characterized in that: set 1/2nd wave plates (11) of a kind of high-power semiconductor laser beam output coupler also can be positioned at the front of the 3rd right-angle prism (7) or the back of the 3rd right-angle prism (7) along the normal beam direction of propagation.
6. high-power semiconductor laser beam output coupler, it is characterized in that: first semiconductor laser array (1) and second semiconductor laser array (2) that are provided with output S polarized light, the 3rd semiconductor laser array (3) and the 4th semiconductor laser array (4) of output P polarized light, first right-angle prism (5), second right-angle prism (6), the 3rd right-angle prism (7), first wavelength coupler (8), second wavelength coupler (9), polarizing coupler (10), light-beam forming unit (A); Wherein the wavelength of first semiconductor laser array (1) and the 4th semiconductor laser array (4) is λ
1, the wavelength of second semiconductor laser array (2) and the 3rd semiconductor laser array (3) is λ
2
The light that the light that first semiconductor laser array (1) sends sends with second semiconductor laser array (2) after through first right-angle prism (5) reflection deviation carries out wavelength by first wavelength coupler (8) and is coupled that to obtain comprising wavelength be λ
1And λ
2Light beam (I); Simultaneously the light that sends with the 3rd semiconductor laser array (3) after through second right-angle prism (6) reflection deviation of the light that sends of the 4th semiconductor laser array (4) carries out wavelength by second wavelength coupler (9) and is coupled that to obtain comprising wavelength be λ
1And λ
2Light beam (II); Light beam (I) is through 90 ° of the 3rd right-angle prism (7) direction of propagation deviations, and light beam (I) and light beam (II) together enter polarizing coupler (10) and close bundle, and exporting a branch of wavelength that comprises is λ
1, λ
2Light beam;
The light-beam forming unit (A) that is provided with can be before the wavelength coupling, also can be after the wavelength coupling;
First semiconductor laser array (1) and second semiconductor laser array (2) that are provided with also can be exported the P polarized light, the S of the 3rd semiconductor laser array (3) of She Zhiing and the 4th semiconductor laser array (4) output simultaneously polarized light.
7. a kind of high-power semiconductor laser beam output coupler according to claim 6 is characterized in that: a kind of high-power semiconductor laser beam output coupler is provided with first right-angle prism (5), second right-angle prism (6), the 3rd right-angle prism (7) of surface coating; Wherein the film that plated of first right-angle prism (5), the right angle face of second right-angle prism (6) is λ to wavelength
1Laser have high-transmission rate, the film that the inclined-plane plated is λ to wavelength
1Laser have high reflectance, the film that the right angle face of the 3rd right-angle prism (7) is plated is λ to wavelength
1, λ
2Laser have high-transmission rate, the film that the inclined-plane plated is λ to wavelength
1, λ
2Laser have high reflectance.
8. a kind of high-power semiconductor laser beam output coupler according to claim 6 is characterized in that: set first wavelength coupler (8), second wavelength coupler (9) are a kind of beam splitters; First wavelength coupler (8) is λ with second wavelength coupler (9) to wavelength
1Laser have high-transmission rate, be λ wavelength
2Laser have high reflectance.
9. a kind of high-power semiconductor laser beam output coupler according to claim 6 is characterized in that: set polarizing coupler (10) is a kind of Glan-Taylor prism, diaphragm type polarizer, the film with polarization or natural birefringence crystal.
10. according to claim 1 or the compound output unit of the described a kind of high-power semiconductor laser beam of claim 6, it is characterized in that: the number of described semiconductor laser array can be selected according to actual needs, enters the light beam that polarizing coupler two-beam before contains n wavelength: λ
1, λ
2, λ
3... λ
n, promptly n semiconductor laser array, n=2,3 are each side arranged at polarizing coupler ...
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| RU2649639C2 (en) * | 2016-08-05 | 2018-04-04 | Общество С Ограниченной Ответственностью "Фемтовижн" | Method of spectral-polarization convergence of several laser beams to one for high-efficient laser pumping of broadband media |
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