CN203631975U - High-power semiconductor laser processing light source system with light-feedback-resistant effect - Google Patents
High-power semiconductor laser processing light source system with light-feedback-resistant effect Download PDFInfo
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- CN203631975U CN203631975U CN201320677555.0U CN201320677555U CN203631975U CN 203631975 U CN203631975 U CN 203631975U CN 201320677555 U CN201320677555 U CN 201320677555U CN 203631975 U CN203631975 U CN 203631975U
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 50
- 230000000694 effects Effects 0.000 title claims abstract description 12
- 239000013078 crystal Substances 0.000 claims abstract description 27
- 230000010287 polarization Effects 0.000 claims abstract description 12
- 238000007598 dipping method Methods 0.000 claims description 7
- 230000008033 biological extinction Effects 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001815 facial effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005542 laser surface treatment Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
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Abstract
The utility model provides a high-power semiconductor laser processing light source system with a light-feedback-resistant effect. Reflection of feedback light to a laser device along an incident light path during laser processing can be completely eliminated by the system, and influence of feedback light on output performance and the service life of the semiconductor laser device is reduced. All bars of the high-power semiconductor laser processing light source system are consistent in polarization state and emit o-light. A light emergent direction of a semiconductor laser device stack array is provided with double-refraction crystal through which o-light is transmitted along a straight line and e-light is refracted. A quarter-wave plate or two one-eighth-wave plates is/are arranged behind the double-refraction crystal so that the polarization state of light is rotated for 45 degrees. A light-absorbing plate is arranged between the semiconductor laser device stack array and the double-refraction crystal in a light path formed via refraction of the double-refraction crystal in the opposite direction.
Description
Technical field
The utility model belongs to technical field of laser processing, relates to a kind of semiconductor laser light resource system, relates in particular to the high-power semiconductor laser source system for Laser Surface Treatment.
Background technology
High-power semiconductor laser has the advantages such as volume is little, lightweight, efficiency is high, the life-span is long, has been widely used in field of laser processing.In laser processing procedure, high-power semiconductor laser emitting laser adds man-hour in work piece surface, workpiece can carry out part reflection to laser, this part feedback light very easily enters in high-power semiconductor laser, cause the unstable of laser output spectrum, the phenomenons such as the shake of power output, in the useful life that even can reduce semiconductor laser, must reduce or eliminate for this reason the impact of feedback light on semiconductor laser light resource.The technology of eliminating at present feedback light is mainly the principle of isolating mirror based on faraday, but, in this technology, feedback light eradicating efficacy depends on the extinction ratio of analyzer completely, but analyzer is in the time being applied in high power laser sources vertical analyzing, still there is transmitted light, can not reach the effect of eliminating completely.
Utility model content
The utility model provides a kind of high-power semiconductor laser light source for processing system with feedback effect against sunshine, this system can be eliminated feedback light in laser processing completely and be reflected back in laser along input path, reduces feedback light noise spectra of semiconductor lasers output performance and the impact in life-span.
The technical solution of the utility model is as follows:
A high-power semiconductor laser light source for processing system with feedback effect against sunshine, comprises semiconductor laser stacks, and all bar bar polarization states of described semiconductor laser stacks are consistent, all send o light; Be provided with birefringece crystal at semiconductor laser stacks light direction, described birefringece crystal, reflects e light along line transmission o light; Quarter-wave plate or two 1/8th wave plates are set after birefringece crystal, in order to polarisation of light state is rotated to 45 °; Between semiconductor laser stacks and birefringece crystal, in the light path forming through birefringece crystal refraction, be provided with extinction plate in the other direction.
Based on above-mentioned basic scheme, the utility model also does following optimization and limits and improve:
After described quarter-wave plate or two 1/8th wave plates, light beam focusing system is set.
Outside semiconductor laser stacks bright dipping light path, be also provided with indication light source, the light naked eyes that described indication light source sends can identifications and are distinguished with the light that semiconductor laser stacks sends; A position corresponding to folded battle array middle part bar bar becomes miter angle that a speculum is set dorsad in the bright dipping light path of semiconductor laser stacks, and the light that indication light source sends is perpendicular to semiconductor laser stacks bright dipping light path, after speculum reflection with laser parallel outgoing.
Above-mentioned indication light source adopts red-light source or green-light source.
Above-mentioned speculum can be arranged between semiconductor laser stacks and birefringece crystal.
The utlity model has following advantage:
1, vertical with incident light polarization state through the feedback light of twice 1/4th slides, adopt birefringece crystal to carry out separating on space with former incident light to all feedback light, reach and eliminate feedback light incident completely and return in semiconductor laser.
2, the optical component that the utility model adopts only has birefringece crystal and 1/4th slides, and light path is simple, easy for installation.
3, the utility model is selected the semiconductor laser stacks that polarization state is consistent, easy to process, realizes cost low.
4, the utility model structure is simple and clear, is convenient to fitting operation, only need a speculum that size is minimum be set in bar bar corresponding position, folded battle array middle part, can realize laser spot position indication, facilitates the accurate location to Working position in laser processing engineering.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of an embodiment of the present utility model.
Drawing reference numeral explanation:
1-semiconductor laser stacks (see and can only see a bar bar from main apparent direction); 2-birefringece crystal; 3-quarter-wave plate; 4-extinction plate; 5-indicates light source, 6-speculum, the laser that the folded paroxysm of 7-goes out; 8-pilot light; 9-laser and indication combiner light; 10-feedback light.
Embodiment
As shown in Figure 1, the high-power semiconductor laser light source for processing system that has a feedback effect against sunshine comprises semiconductor laser stacks 1, birefringece crystal 2, quarter-wave plate 3, extinction plate 4, indication light source 5 and speculum 6.Semiconductor laser stacks 1 has multiple bar bars, and polarization state is consistent, and polarization state is o light.At semiconductor laser stacks 1 light direction, birefringece crystal 2 is set.Described birefringece crystal 2, to the transmission of o light, reflects e light.
Quarter-wave plate 3 in birefringece crystal 2 rear settings can be by 45 ° of the polarization state rotations of laser, in semiconductor laser stacks 1 middle part bar bar laser emitting light path, pilot light speculum 6 is set, reponse system against sunshine (birefringece crystal 2, quarter-wave plate 3) is set after pilot light speculum 6.
The area that clings to bar corresponding position and speculum 6 because of 6 of set speculums at middle part only need cover the pilot light that indication light source sends, reduce as far as possible speculum 6 other are clung to stopping of bar bright dippings, thereby can greatly reduce laser loss at work.
The laser that semiconductor laser stacks 1 polarization state of sending is o, form and close Shu Guang after speculum 6 closes bundle with pilot light, after birefringece crystal 2, close Shu Guang and be transmitted through quarter-wave plate 3, polarization state is closed Shu Guang after rotating 45 ° and is incident upon processing work surface, the part light vertical reflection light of returning, again pass through quarter-wave plate 3, now the polarization state of laser has been rotated again 45 ° of formation feedback light 10, feedback light 10 is to become e light from initial o light through twice 45 ° of rotations, feedback light 10(e light now) be incident to after birefringece crystal 2, birefringece crystal 2 is to feedback light 10(e light) reflect, at the feedback light 10(e light after refraction) extinction plate 4 is set on emitting light path, absorb feedback light 10(e light) energy, thereby effectively prevent that reverberation from getting back to the inside, chamber of semiconductor laser, reduce the infringement that laser internal exergy dissipation injures chamber facial mask, and then the useful life of improving semiconductor laser.
The utility model can also adopt two 1/8th wave plates to substitute the quarter-wave plate in such scheme, can play identical technique effect.
Claims (4)
1. a high-power semiconductor laser light source for processing system with feedback effect against sunshine, comprises semiconductor laser stacks, it is characterized in that: all bar bar polarization states of described semiconductor laser stacks are consistent, all send o light; Be provided with birefringece crystal at semiconductor laser stacks light direction, described birefringece crystal, reflects e light along line transmission o light; Quarter-wave plate or two 1/8th wave plates are set after birefringece crystal, in order to polarisation of light state is rotated to 45 °; Between semiconductor laser stacks and birefringece crystal, in the light path forming through birefringece crystal refraction, be provided with extinction plate in the other direction.
2. the high-power semiconductor laser light source for processing system with feedback effect against sunshine according to claim 1, it is characterized in that: outside semiconductor laser stacks bright dipping light path, be also provided with indication light source, the light naked eyes that described indication light source sends can identifications and distinguished with the light that semiconductor laser stacks sends; A position corresponding to folded battle array middle part bar bar becomes miter angle that a speculum is set dorsad in the bright dipping light path of semiconductor laser stacks, and the light that indication light source sends is perpendicular to semiconductor laser stacks bright dipping light path, after speculum reflection with laser parallel outgoing.
3. the high-power semiconductor laser light source for processing system with feedback effect against sunshine according to claim 2, is characterized in that: described indication light source is red-light source or green-light source.
4. the high-power semiconductor laser light source for processing system with feedback effect against sunshine according to claim 3, is characterized in that: described speculum is arranged between semiconductor laser stacks and birefringece crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320677555.0U CN203631975U (en) | 2013-10-29 | 2013-10-29 | High-power semiconductor laser processing light source system with light-feedback-resistant effect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320677555.0U CN203631975U (en) | 2013-10-29 | 2013-10-29 | High-power semiconductor laser processing light source system with light-feedback-resistant effect |
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| Publication Number | Publication Date |
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| CN203631975U true CN203631975U (en) | 2014-06-04 |
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| CN201320677555.0U Expired - Lifetime CN203631975U (en) | 2013-10-29 | 2013-10-29 | High-power semiconductor laser processing light source system with light-feedback-resistant effect |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103532016A (en) * | 2013-10-29 | 2014-01-22 | 西安炬光科技有限公司 | High-power semiconductor laser processing light source system with optical feedback preventing effect |
| CN104084698A (en) * | 2014-07-28 | 2014-10-08 | 深圳市汉越激光科技有限公司 | Laser cutting machine |
| CN104174991A (en) * | 2014-08-18 | 2014-12-03 | 深圳市深普镭科技有限公司 | Laser-beam welding machine |
| CN105904085A (en) * | 2016-07-07 | 2016-08-31 | 中国科学院半导体研究所 | Semiconductor laser processing system |
| CN108422082A (en) * | 2017-02-15 | 2018-08-21 | 南京帝耐激光科技有限公司 | Laser process equipment, laser processing and its application |
| CN111007707A (en) * | 2018-10-04 | 2020-04-14 | 卡西欧计算机株式会社 | Case and timepiece |
-
2013
- 2013-10-29 CN CN201320677555.0U patent/CN203631975U/en not_active Expired - Lifetime
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103532016A (en) * | 2013-10-29 | 2014-01-22 | 西安炬光科技有限公司 | High-power semiconductor laser processing light source system with optical feedback preventing effect |
| CN104084698A (en) * | 2014-07-28 | 2014-10-08 | 深圳市汉越激光科技有限公司 | Laser cutting machine |
| CN104084698B (en) * | 2014-07-28 | 2016-08-24 | 深圳市汉越激光科技有限公司 | A kind of laser cutting machine |
| CN104174991A (en) * | 2014-08-18 | 2014-12-03 | 深圳市深普镭科技有限公司 | Laser-beam welding machine |
| CN104174991B (en) * | 2014-08-18 | 2016-12-07 | 深圳市深普镭科技有限公司 | A kind of laser-beam welding machine |
| CN105904085A (en) * | 2016-07-07 | 2016-08-31 | 中国科学院半导体研究所 | Semiconductor laser processing system |
| CN108422082A (en) * | 2017-02-15 | 2018-08-21 | 南京帝耐激光科技有限公司 | Laser process equipment, laser processing and its application |
| CN111007707A (en) * | 2018-10-04 | 2020-04-14 | 卡西欧计算机株式会社 | Case and timepiece |
| CN111007707B (en) * | 2018-10-04 | 2021-06-18 | 卡西欧计算机株式会社 | Case and timepiece |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 710077 Xi'an hi tech Zone 56, Xi'an, Shaanxi Province, No. 56 Patentee after: Focuslight Technologies Inc. Address before: 710119 Third Floor, Building 10, 17 Information Avenue, New Industrial Park, Xi'an High-tech Zone, Shaanxi Province Patentee before: XI'AN FOCUSLIGHT TECHNOLOGIES Co.,Ltd. |
|
| CP03 | Change of name, title or address | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140604 |
|
| CX01 | Expiry of patent term |